CN102468418B

CN102468418B - Vertical-structure LED (Light Emitting Diode) chip and manufacturing method thereof

Info

Publication number: CN102468418B
Application number: CN201010550060.2A
Authority: CN
Inventors: 沈佳辉; 洪梓健
Original assignee: Rongchuang Energy Technology Co ltd; Zhanjing Technology Shenzhen Co Ltd
Current assignee: Rongchuang Energy Technology Co ltd; Zhanjing Technology Shenzhen Co Ltd
Priority date: 2010-11-18
Filing date: 2010-11-18
Publication date: 2015-04-29
Anticipated expiration: 2030-11-18
Also published as: CN102468418A

Abstract

The invention relates to a vertical-structure LED (Light Emitting Diode) chip, which comprises a conducting substrate and an epitaxial layer grown on the conducting substrate. A plurality of blind holes are arranged on the epitaxial layer, and a light condensing lens covers each blind hole. The manufacturing method of the vertical-structure LED chip comprises the following steps of: (1) arranging the epitaxial layer on the conducting substrate; (2) etching the epitaxial layer to form the plurality of blind holes; (3) covering the top of each blind hole by the light condensing lens. The light condensing lens covers the top of each blind hole of the vertical-structure LED chip, thus lights emitted from the top of each blind hole are condensed such that the light emitting efficiency of the vertical-structure LED chip is improved.

Description

Light emitting diode chip with vertical and manufacture method thereof

Technical field

The present invention relates to a kind of chip, refer to a kind of light emitting diode chip with vertical and manufacture method thereof especially.

Background technology

Light-emitting diode relies on its specular removal, low energy consumption, the advantage such as pollution-free, has been applied among increasing occasion, has greatly the trend replacing conventional light source.

Light-emitting diode chip for backlight unit is as the part of core the most in light-emitting diode, and the height of its luminous efficiency directly determines the size of light-emitting diode output light flux.But existing light-emitting diode chip for backlight unit still exists problems in design, badly influence the output brightness of whole light-emitting diode.Especially, due to luminous mechanism, the light that direct self-luminous diode chip for backlight unit exports is substantially all unordered radial, and light can not be aggregated effectively, thus causes the brightness of light-emitting diode chip for backlight unit to be restricted.

Summary of the invention

The present invention aim to provide a kind of can the light emitting diode chip with vertical of improving luminous efficiency and manufacture method thereof.

A kind of light emitting diode chip with vertical, it comprises electrically-conductive backing plate and is grown on the epitaxial layer on electrically-conductive backing plate, and this epitaxial layer forms multiple blind hole, and each blind hole upper cover has collector lens.

A manufacture method for light emitting diode chip with vertical, comprises step:

1) epitaxial layer is set on electrically-conductive backing plate;

2) etch epitaxial layer and form multiple blind hole;

3) each blind hole top closure collector lens.

The blind hole top of above-mentioned light emitting diode chip with vertical placed collector lens, is assembled by the light by the outgoing of blind hole top, improves the luminous efficiency of light emitting diode chip with vertical.

With reference to the accompanying drawings, the invention will be further described in conjunction with specific embodiments.

Accompanying drawing explanation

Fig. 1 is the vertical view of the light emitting diode chip with vertical of one embodiment of the invention, wherein some blind hole does not place lens.

Fig. 2 is the profile of the II-II along the line of light emitting diode chip with vertical shown in Fig. 1.

Fig. 3 is the flow process of the light emitting diode chip with vertical manufacturing one embodiment of the invention.

Main element symbol description

Electrically-conductive backing plate 10

Epitaxial layer 20

P type semiconductor layer 21

Semiconductor excitation layer 23

N type semiconductor layer 25

Electrode 30

Blind hole 40

Lens 50

Embodiment

Fig. 1 and Fig. 2 shows the light emitting diode chip with vertical of one embodiment of the invention.This light emitting diode chip with vertical comprises epitaxial layer 20 and that an electrically-conductive backing plate 10, is stacked in electrically-conductive backing plate 10 upper surface and is arranged at electrode 30 on epitaxial layer.This epitaxial layer 20 offers some spaced blind holes 40.Lens 50 are placed at the top of each blind hole 40.

Described epitaxial layer 20 comprises and stacking gradually in a p type semiconductor layer 21 of electrically-conductive backing plate 10 upper surface, semiconductor excitation layer 23 and a n type semiconductor layer 25.P type semiconductor layer 21 and n type semiconductor layer 25, for providing the electrons of flowing, make electronics combine at the semiconductor excitation layer 23 between p type semiconductor layer 21 and n type semiconductor layer 25 with cavity energy and give off photon to surrounding.In the present embodiment, n type semiconductor layer 25 can be n type gallium nitride layer, and p type semiconductor layer 21 is P type gallium nitride layer, and semiconductor excitation layer 23 can be single quantum well or multiple quantum well layer.

Described electrically-conductive backing plate 10 can made by the conductive material such as gallium nitride (GaN) substrate, carborundum (SiC), silicon (Si), copper (Cu), tungsten copper (CuW).This electrically-conductive backing plate 10 can be the electrically-conductive backing plate that direct growth has epitaxial layer 20, also can be the new electrically-conductive backing plate of the bonding again by the former insulation growth substrate of etching removal light-emitting diode chip for backlight unit.

Described electrode 30 is formed at the outer peripheral edges of described epitaxial layer 20.This electrode 30 ringwise.In other embodiments, this electrode 30 can be arranged on other positions of epitaxial layer 20, and in other shapes, such as, electrode 30 at the middle part of epitaxial layer 20, and is square.

In the present embodiment, described blind hole 40 is opened in the peripheral part of described epitaxial layer 20, forms array of blind holes.Described electrode 30 is around these blind holes 40.These blind holes 40 are close with electrode 30.Blind hole 40 is not offered at the middle part of this epitaxial layer 20, and to form main luminous zone, epitaxial layer 20 peripheral part forms secondary luminous zone.This blind hole 40 extends to p type semiconductor layer 21 by the end face of epitaxial layer 20.In the present embodiment, the bottom surface of blind hole 40 extends to the downward certain distance of p type semiconductor layer 21 end face, but does not extend to the bottom surface of p type semiconductor layer 21.In other embodiments, blind hole 40 directly can extend to the bottom surface of p type semiconductor layer 21.In the present embodiment, blind hole 40 is circular hole, and in other embodiments, blind hole 40 can be the hole of other shapes such as square hole.

Understandably, in order to increase the light extraction efficiency of light emitting diode chip with vertical, layer of metal reflector can be formed between electrically-conductive backing plate 10 and p type semiconductor layer 21.

The top of each blind hole 40 of described lens 50 capping, assembles the light by this blind hole 40 outgoing, and as shown in Figure 2, the light that epitaxial layer 20 side direction at blind hole 40 place sends is assembled by lens 50.The top of each lens 50 raises up, and bottom is attached on the epitaxial layer 20 around corresponding blind hole 40.In the present embodiment, the flat column structure of lens 50 roughly in top bump, in other embodiments, lens 50 can be other structures, as long as can converging light.In the present embodiment, abut against between adjacent lens 50 together, carry out optically focused with the light sent secondary luminous zone.

Fig. 3 shows the method manufacturing light emitting diode chip with vertical of the present invention, comprises the steps:

1) provide an insulated substrate, this insulated substrate grows epitaxial layer 20, this epitaxial layer 20 is included on insulated substrate and grows n type semiconductor layer 25, semiconductor excitation layer 23 and p type semiconductor layer 21 successively;

2) plating or wafer bond techniques is utilized to be combined with the p type semiconductor layer 21 of epitaxial layer 20 by electrically-conductive backing plate 10;

3) dry-etching or Wet-type etching (such as, laser lift-off technique) is utilized to be separated with n type semiconductor layer 25 by insulated substrate;

4) periphery etching epitaxial layer 20 forms multiple blind hole 40, and these blind holes 40 form an array of blind holes;

5) at each blind hole top closure one lens 50;

6) annular electrode 30 is formed at the periphery evaporation of epitaxial layer 20.

In step 4) in, can utilize gold-tinted developing technique on n type semiconductor layer 25, form a patterning photoresist layer, and according to this patterning photoresist layer etching epitaxial layer 20, to form the array of blind holes being positioned at epitaxial layer 20 periphery, then remove patterning photoresist layer.

Understandably, described electrode 30 can be formed at the middle part of epitaxial layer 20, and described blind hole 40 is around this electrode 30.

Blind hole 40 top of above-mentioned light emitting diode chip with vertical placed collector lens 50, is assembled by the light by the outgoing of blind hole top, improves the luminous efficiency of light-emitting diode chip for backlight unit.

Claims

1. a light emitting diode chip with vertical, it comprises electrically-conductive backing plate and is grown on the epitaxial layer on electrically-conductive backing plate, it is characterized in that: this epitaxial layer forms multiple blind hole, described epitaxial layer comprises the p type semiconductor layer be grown on successively on described electrically-conductive backing plate, semiconductor excitation layer and a n type semiconductor layer, described blind hole extends downward p type semiconductor layer by the end face of the n type semiconductor layer of epitaxial layer and does not contact with electrically-conductive backing plate, described epitaxial layer comprises a main luminous zone and is arranged on the secondary luminous zone of main luminous zone periphery, described blind hole equably, compartment of terrain is arranged in described secondary luminous zone, each blind hole upper cover has collector lens.

2. light emitting diode chip with vertical as claimed in claim 1, it is characterized in that: the top of described collector lens raises up, bottom is attached on the epitaxial layer around corresponding blind hole.

3. light emitting diode chip with vertical as claimed in claim 2, is characterized in that: described collector lens on described epitaxial layer mutually against.

4. light emitting diode chip with vertical as claimed in claim 2, it is characterized in that: also comprise the electrode be arranged on described epitaxial layer, this electrode retaining collar is around described blind hole.

5. a manufacture method for light emitting diode chip with vertical, comprises step:

1) epitaxial layer is set on electrically-conductive backing plate, described epitaxial layer comprises a main luminous zone and is arranged on the secondary luminous zone of main luminous zone periphery, and described epitaxial layer comprises the p type semiconductor layer be grown on successively on described electrically-conductive backing plate, semiconductor excitation layer and a n type semiconductor layer;

2) etch epitaxial layer and form multiple blind hole, described blind hole equably, compartment of terrain is arranged in described secondary luminous zone, and described blind hole extends downward p type semiconductor layer by the end face of the n type semiconductor layer of epitaxial layer and do not contact with electrically-conductive backing plate;

3) each blind hole top closure collector lens.

6. the manufacture method of light emitting diode chip with vertical as claimed in claim 5, is characterized in that: be also included in the step that epitaxial layer evaporation forms electrode.

7. the manufacture method of the light emitting diode chip with vertical as described in claim 5 or 6, it is characterized in that: in step 1) in also comprise step and a) provide an insulated substrate, insulated substrate grows epitaxial layer successively, i.e. n type semiconductor layer, semiconductor excitation layer and p type semiconductor layer; Step b) on p type semiconductor layer in conjunction with an electrically-conductive backing plate; Step c) etching removal insulated substrate.

8. the manufacture method of light emitting diode chip with vertical as claimed in claim 7, it is characterized in that: the top of described collector lens raises up, bottom is attached on the epitaxial layer around corresponding blind hole.