JP5757512B1 - 深紫外led及びその製造方法 - Google Patents
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- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
Abstract
Description
(数1)
mλ/nav=2a
(数2)
(数3)
nav 2=n2 2+(n1 2−n2 2)(2π/√3)(R/a)2
(数4)
mλ/nav=2a
その結果は、m=2のとき、a=149、R=59.5、m=3のとき、a=224、R=89.5、m=4のとき、a=298、R=119.5となる。
(数6)
LEE増減率=(出力2−出力1)/出力1
1) p-GaNコンタクト層の膜厚が200nm程度であればフォトニック結晶の深さが1周期以上で入射光を完全に反射し吸収を抑制し、LEE増減率の合計値は10%以上改善される。
2 Ni(又はPd)層
3 p−GaNコンタクト層
4 透明p−AlGaNコンタクト層
5 p−AlGaN層
6 電子ブロック層
7 バリア層
8 量子井戸層
9 バリア層
10 n−AlGaN層
11 AlNバッファー層
12 サファイア基板
100 フォトニック結晶周期構造
110 フォトニック結晶周期構造
200 樹脂モールド
210 UV光源
220 高追従機構
230 フォトレジスト
231 有機レジスト膜
232 シリコン含有レジスト膜
240 高剛性/高精度ステージ
301 酸素及びフッ素含有ガスプラズマ
302 塩素含有プラズマ
Claims (13)
- 設計波長をλとする深紫外LEDであって、
反射電極層と、金属層と、p型GaNコンタクト層と、波長λに対し透明な、p型AlGaN層とを、基板とは反対側からこの順で有し、
少なくとも前記p型GaNコンタクト層と前記p型AlGaN層との界面を含む厚さ方向の範囲に設けられたフォトニック結晶周期構造を有し、かつ、
前記フォトニック結晶周期構造は、フォトニックバンドギャップを有する
ことを特徴とする深紫外LED。 - さらに、前記フォトニック結晶周期構造は、前記反射電極層及び前記金属層に設けられていることを特徴とする請求項1に記載の深紫外LED。
- 前記フォトニック結晶周期構造は、
少なくとも前記p型GaNコンタクト層と前記p型AlGaN層との界面を含む厚さ方向の範囲に設けられた柱状構造体を含むことを特徴とする請求項1に記載の深紫外LED。 - 前記フォトニック結晶周期構造は、前記基板側のその底面部において空気と前記AlGaN層の2つの構造体からなり、
波長λ、周期a及び前記2つの構造体の平均屈折率navがブラッグ散乱条件を満たし、かつ、
当該ブラッグ散乱条件の次数mは1<m<5の範囲にあること、
を特徴とする請求項1に記載の深紫外LED。 - 前記フォトニックバンドギャップは、TE偏光成分に対し開かれていることを特徴とする請求項4に記載の深紫外LED。
- 前記フォトニック結晶周期構造は、その深さhを前記周期aの2/3以上とすることを特徴とする請求項5に記載の深紫外LED。
- 前記フォトニック結晶周期構造は、その深さhを前記周期a以上とすることを特徴とする請求項5に記載の深紫外LED。
- 前記フォトニック結晶周期構造は、その深さhを、
前記p型AlGaN層の厚さ以上、前記p型GaNコンタクト層と前記p型AlGaN層との合計の厚さ以下、とすることを特徴とする請求項5から7までのいずれか1項に記載の深紫外LED。 - 前記p型AlGaN層に加えて、さらに、前記基板側に前記p型AlGaN層よりもAlの組成の大きいp型AlGaN層を有することを特徴とする請求項1から8までのいずれか1項に記載の深紫外LED。
- 前記フォトニック結晶周期構造は、ナノインプリントリソグラフィー法による転写技術を用いて形成されたものであることを特徴とする請求項1から8までのいずれか1項に記載の深紫外LED。
- 前記フォトニック結晶周期構造は、流動性の高いレジストとエッチング選択比の高いレジストによる2層レジスト法を用いたドライエッチングを用いて形成されたものであることを特徴とする請求項10に記載の深紫外LED。
- 深紫外LEDの製造方法であって、
設計波長をλとし、反射電極層と、金属層と、p型GaNコンタクト層と、波長λに対し透明な、p型AlGaN層とを、基板とは反対側からこの順で含有する積層構造体を準備する工程と、
少なくとも前記p型GaNコンタクト層と前記p型AlGaN層の界面を含む厚さ方向の範囲に設けられたフォトニック結晶周期構造を形成するための金型を準備する工程と、
前記積層構造体上に、レジスト層を形成し、前記金型の構造を転写する工程と、
前記レジスト層をマスクとして順次前記積層構造体をエッチングしてフォトニック結晶周期構造を形成する工程と
を有する深紫外LEDの製造方法。 - 前記積層構造体上に、レジスト層を形成し、前記金型の構造を転写する工程は、
前記積層構造体上に、流動性の高い第1のレジスト層と、前記第1のレジスト層に対するエッチング選択比の高い第2のレジスト層と、による2層レジスト法を用いたドライエッチングを形成する工程と、
ナノインプリントリソグラフィー法を用いて前記第1のレジスト層に前記金型の構造を転写する工程と、を有し、
前記レジスト層をマスクとして順次前記積層構造体をエッチングしてフォトニック結晶周期構造を形成する工程は、前記第1のレジスト層と前記第2のレジスト層とを、前記第2のレジスト層が露出するまでエッチングするとともに、前記第1のレジスト層のパターン凸部も合わせてエッチングし、
前記第2のレジスト層をマスクとして順次前記積層構造体をエッチングしてフォトニック結晶周期構造を形成する工程を有することを特徴とする請求項12に記載の深紫外LEDの製造方法。
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EP2942818B1 (en) | 2018-01-31 |
JPWO2015133000A1 (ja) | 2017-04-06 |
CN105934833B (zh) | 2017-09-15 |
CN105934833A (zh) | 2016-09-07 |
WO2015133000A1 (ja) | 2015-09-11 |
TWI523268B (zh) | 2016-02-21 |
TW201535782A (zh) | 2015-09-16 |
US9806229B2 (en) | 2017-10-31 |
EP2942818A4 (en) | 2015-11-25 |
EP2942818A1 (en) | 2015-11-11 |
KR101648079B1 (ko) | 2016-08-12 |
KR20150114457A (ko) | 2015-10-12 |
US20160133785A1 (en) | 2016-05-12 |
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