TWI584498B - 發光二極體磊晶結構 - Google Patents
發光二極體磊晶結構 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims description 81
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 9
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims 1
- 239000000463 material Substances 0.000 description 24
- 229910002601 GaN Inorganic materials 0.000 description 6
- 239000000370 acceptor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Description
本發明是有關於一種發光二極體磊晶結構。
發光二極體由於具有高亮度、反應速度快、體積小、污染低、高可靠度、適合量產等優點,因此發光二極體在照明領域或是消費性電子產品的開發應用亦將越來越多,目前已將發光二極體廣泛地應用在大型看板、交通號誌燈、手機、掃描器、傳真機之光源以及照明裝置等。基於上述可知,發光二極體的發光效率以及亮度需求將會越來越受到重視,是故高亮度發光二極體的研究開發將是固態照明應用上的重要課題。
發光二極體已經在某些應用領域中取代螢光燈與白熾燈,而作為例如需求高速反應的掃描器燈源、投影裝置的燈源、液晶顯示器的背光源或前光源,汽車儀表板上的照明燈源,交通號誌的燈源以及一般照明裝置的燈源等等。相較於傳統燈管,發光二極體具有例如體積較小、使用壽命較長、驅動電壓/電流較低、結構強度較高、無汞污染以及高發光效率(節能)等顯著優勢。
為了進一步改善發光二極體的各項特性,相關領域莫不費盡心思開發。如何能提供一種具有較佳特性的發光二極體,實屬當前重要研發課題之一,亦成為當前相關領域亟需改進的目標。
本發明之一技術態樣是在提供一種發光二極體磊晶結構,以提升發光二極體磊晶結構的發光強度。
根據本發明一實施方式,一種發光二極體磊晶結構,包含基板、緩衝層、第一半導體層、發光層、中介層、第二半導體層以及接觸層。緩衝層設置於基板上。第一半導體層設置於緩衝層上。發光層設置於第一半導體層上。中介層設置於發光層上,其中中介層之材質為P型氮化鋁。第二半導體層設置於中介層上,其中第二半導體層之材質為P型氮化鋁鎵。接觸層設置於第二半導體層上。
於本發明之一或多個實施方式中,中介層的厚度小於或等於第二半導體層的厚度。
於本發明之一或多個實施方式中,中介層的厚度為約1nm至約10nm。
於本發明之一或多個實施方式中,第二半導體層的厚度為約10nm至約50nm。
於本發明之一或多個實施方式中,中介層的摻雜濃度小於或等於第二半導體層的摻雜濃度。
於本發明之一或多個實施方式中,中介層的摻雜濃度為約1×1017cm-3至約2×1018cm-3。
於本發明之一或多個實施方式中,第二半導體層的摻雜濃度為約2×1018cm-3至約3×1019cm-3。
於本發明之一或多個實施方式中,中介層與第二半導體層為摻雜鎂。
於本發明之一或多個實施方式中,中介層的鋁重量百分比大於第二半導體層的鋁重量百分比。
於本發明之一或多個實施方式中,發光層所發射之光線包含波長小於或等於約280nm的光線。
本發明上述實施方式藉由妥善選擇中介層與第二半導體層的材質,於是相較於發光層,第二半導體層具有較高的能階,因此第二半導體層可以有效地阻擋電子而不讓電子通過,在此同時,相較於第二半導體層,中介層具有較高的能階,換句話說,發光層與中介層的能階差大於發光層與第二半導體層的能階差,因此中介層將能更進一步地阻擋電子而不讓電子通過,因而使電子得以停留在發光層中,進而提升發光層的發光效率。
100‧‧‧發光二極體磊晶結構
110‧‧‧基板
120‧‧‧緩衝層
130‧‧‧第一半導體層
140‧‧‧發光層
150‧‧‧中介層
160‧‧‧第二半導體層
170‧‧‧接觸層
200、300‧‧‧曲線
第1圖繪示依照本發明一實施方式之發光二極體磊晶結構的側視示意圖。
第2圖繪示依照本發明一實施方式之發光二極體磊晶結構的發光強度-波長圖。
以下將以圖式揭露本發明之複數個實施方式,為明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,應瞭解到,這些實務上的細節不應用以限制本發明。也就是說,在本發明部分實施方式中,這些實務上的細節是非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。
第1圖繪示依照本發明一實施方式之發光二極體磊晶結構100的側視示意圖。本發明不同實施方式提供一種發光二極體磊晶結構100,發光二極體磊晶結構100主要為用於發射紫外光。
如第1圖所繪示,發光二極體磊晶結構100包含基板110、緩衝層120、第一半導體層130、發光層140、中介層150、第二半導體層160以及接觸層170。緩衝層120設置於基板110上。第一半導體層130設置於緩衝層120上。發光層140設置於第一半導體層130上。中介層150設置於發光層140上,其中中介層150之材質為P型氮化鋁。第二半導體層160設置於中介層150上,其中第二半導體層160之材質為P型氮化鋁鎵。接觸層170設置於第二半導體層160上。
發光二極體磊晶結構100在發光時,電子會通過緩衝層120、第一半導體層130並到達發光層140,為了讓電子可以停留在發光層140,將中介層150、第二半導體層160設置於在發光層140上,中介層150、第二半導體層160將可以阻擋電子通過,因而使電子得以停留在發光層140中。
具體而言,因為第二半導體層160的材料特性(第二半導體層160之材質為P型氮化鋁鎵),相較於發光層140,第二半導體層160具有較高的能階,因此第二半導體層160可以有效地阻擋電子而不讓電子通過。在此同時,因為中介層150的材料特性(中介層150之材質為P型氮化鋁),相較於第二半導體層160,中介層150具有較高的能階,換句話說,發光層140與中介層150的能階差大於發光層140與第二半導體層160的能階差,因此中介層150將能更進一步地阻擋電子而不讓電子通過,因而使電子得以停留在發光層140中,進而提升發光層140的發光效率。
另外,發光二極體磊晶結構100在發光時,電洞會通過第二半導體層160、中介層150而到達發光層140,因為電洞在發光二極體磊晶結構100的遷移速率遠低於電子在發光二極體磊晶結構100的遷移速率,因此在中介層150、第二半導體層160中摻雜受體而形成P型半導體,將使中介層150、第二半導體層160中的電洞數量增加,進而使電洞進入發光層140的有效效率提升。於是,
電洞進入發光層140的有效效率將可以與電子進入發光層140的有效效率匹配,進而提升發光層140的發光效率。
第2圖繪示依照本發明一實施方式之發光二極體磊晶結構100與傳統發光二極體磊晶結構的發光強度-波長圖。如第2圖所繪示,曲線200繪示發光二極體磊晶結構100對於不同波長之光線的發光強度,曲線300繪示傳統發光二極體磊晶結構對於不同波長之光線的發光強度,圖中可以明顯地發現發光二極體磊晶結構100對於不同波長之光線的發光強度遠大於傳統發光二極體磊晶結構對於不同波長之光線的發光強度。
具體而言,如第1圖與第2圖所繪示,發光層140所發射之光線包含波長小於或等於約280nm的光線,即包含紫外光。進一步來說,如第2圖所繪示,發光二極體磊晶結構100對於波長小於或等於約280nm的光線的發光強度遠大於傳統發光二極體磊晶結構對於波長小於或等於約280nm的光線的發光強度。
另外,需要特別注意的是,因為中介層150之材質為P型氮化鋁,與第二半導體層160之材質不同,因此將可避免電子與電洞在中介層150中結合而發光的情形。若是電子與電洞在中介層150中結合而發光,將可能導致發光二極體磊晶結構100發出更多波長大於280nm的光線,因而使發光二極體磊晶結構100對於波長小於或等於約280nm的光線的發光強度下降。因此,讓中介層150之材質為P型氮化鋁將可避免這種情況發生。
具體而言,基板110之材質為藍寶石、碳化矽、氮化鋁或矽。應了解到,以上所舉之基板110之材質僅為例示,並非用以限制本發明,本發明所屬技術領域中具有通常知識者,應視實際需要,彈性選擇基板110之材質。
具體而言,緩衝層120之材質為氮化鋁。應了解到,以上所舉之緩衝層120之材質僅為例示,並非用以限制本發明,本發明所屬技術領域中具有通常知識者,應視實際需要,彈性選擇緩衝層120之材質。
具體而言,第一半導體層130之材質為N型氮化鋁鎵。應了解到,以上所舉之第一半導體層130之材質僅為例示,並非用以限制本發明,本發明所屬技術領域中具有通常知識者,應視實際需要,彈性選擇第一半導體層130之材質。
具體而言,發光層140可為多重量子井結構。應了解到,以上所舉之發光層140的具體實施方式僅為例示,並非用以限制本發明,本發明所屬技術領域中具有通常知識者,應視實際需要,彈性選擇發光層140的具體實施方式。
具體而言,接觸層170之材質為P型氮化鎵。應了解到,以上所舉之接觸層170之材質僅為例示,並非用以限制本發明,本發明所屬技術領域中具有通常知識者,應視實際需要,彈性選擇接觸層170之材質。
具體而言,中介層150的鋁重量百分比大於第二半導體層160的鋁重量百分比,且中介層150的厚度小於或等於第二半導體層160的厚度。因為中介層150之材質為P型氮化鋁,第二半導體層160之材質為P型氮化鋁鎵,因此中介層150的鋁重量百分比較高,而鋁重量百分比較高容易導致塊材產生裂縫,且中介層150與第二半導體層160之間的鋁重量百分比差異亦可能造成中介層150與第二半導體層160之間的表面產生裂縫,因而使發光二極體磊晶結構100的整體結構有缺陷。因此,為了使發光二極體磊晶結構100的整體結構不要有缺陷,讓中介層150的厚度小於或等於第二半導體層160的厚度,如此將減少裂縫產生的機會。
更具體地說,中介層150的厚度為約1nm至約10nm,第二半導體層160的厚度為約10nm至約50nm。應了解到,以上所舉之中介層150與第二半導體層160的厚度僅為例示,並非用以限制本發明,本發明所屬技術領域中具有通常知識者,應視實際需要,彈性選擇中介層150的厚度與第二半導體層160。
具體而言,中介層150與第二半導體層160為摻雜二價受體。更具體地說,中介層150與第二半導體層160為摻雜鎂。應了解到,以上所舉之中介層150與第二半導體層160的具體實施方式僅為例示,並非用以限制本發明,本發明所屬技術領域中具有通常知識者,應視實際
需要,彈性選擇中介層150與第二半導體層160的具體實施方式。
具體而言,中介層150的摻雜濃度小於或等於第二半導體層160的摻雜濃度。因為中介層150的鋁重量百分比大於第二半導體層160的鋁重量百分比,而鋁重量百分比較高的塊材會隨著摻雜受體的濃度增加而使得其塊材品質下降,因而易使發光二極體磊晶結構100的整體結構產生缺陷。因此使中介層150的摻雜濃度小於或等於第二半導體層160的摻雜濃度,將可控制中介層150的塊材品質,進而避免使發光二極體磊晶結構100的整體結構產生缺陷。
具體而言,中介層150的摻雜濃度為約1×1017cm-3至約2×1018cm-3,第二半導體層160的摻雜濃度為約2×1018cm-3至約3×1019cm-3。應了解到,以上所舉之中介層150與第二半導體層160的具體實施方式僅為例示,並非用以限制本發明,本發明所屬技術領域中具有通常知識者,應視實際需要,彈性選擇中介層150與第二半導體層160的具體實施方式。
本發明上述實施方式藉由妥善選擇中介層150與第二半導體層160的材質,於是相較於發光層140,第二半導體層160具有較高的能階,因此第二半導體層160可以有效地阻擋電子而不讓電子通過,在此同時,相較於第二半導體層160,中介層150具有較高的能階,換句話說,發光層140與中介層150的能階差大於發光層140與第
二半導體層160的能階差,因此中介層150將能更進一步地阻擋電子而不讓電子通過,因而使電子得以停留在發光層140中,進而提升發光層140的發光效率。
雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100‧‧‧發光二極體磊晶結構
110‧‧‧基板
120‧‧‧緩衝層
130‧‧‧第一半導體層
140‧‧‧發光層
150‧‧‧中介層
160‧‧‧第二半導體層
170‧‧‧接觸層
Claims (9)
- 一種發光二極體磊晶結構,包含:一基板;一緩衝層,設置於該基板上;一第一半導體層,設置於該緩衝層上;一發光層,設置於該第一半導體層上;一中介層,設置於該發光層上,其中該中介層之材質為P型氮化鋁;一第二半導體層,設置於該中介層上,其中該第二半導體層之材質為P型氮化鋁鎵,其中該中介層的摻雜濃度小於該第二半導體層的摻雜濃度;以及一接觸層,設置於該第二半導體層上。
- 如請求項1所述之發光二極體磊晶結構,其中該中介層的厚度小於或等於該第二半導體層的厚度。
- 如請求項1所述之發光二極體磊晶結構,其中該中介層的厚度為約1nm至約10nm。
- 如請求項1所述之發光二極體磊晶結構,其中該第二半導體層的厚度為約10nm至約50nm。
- 如請求項1所述之發光二極體磊晶結構,其中該中介層的摻雜濃度為約1×1017cm-3至約2×1018cm-3。
- 如請求項1所述之發光二極體磊晶結構,其中該第二半導體層的摻雜濃度為約2×1018cm-3至約3×1019cm-3。
- 如請求項1所述之發光二極體磊晶結構,其中該中介層與該第二半導體層為摻雜鎂。
- 如請求項1所述之發光二極體磊晶結構,其中該中介層的鋁重量百分比大於該第二半導體層的鋁重量百分比。
- 如請求項1所述之發光二極體磊晶結構,其中該發光層所發射之光線的波長包含波長小於或等於約280nm的光線。
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US15/367,199 US20170338377A1 (en) | 2016-05-19 | 2016-12-02 | Interlayer for light emitting diode device |
CN201710249399.0A CN107403858A (zh) | 2016-05-19 | 2017-04-17 | 发光二极管磊晶结构 |
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