WO2015151471A1 - 紫外線発光素子及びそれを用いた電気機器 - Google Patents
紫外線発光素子及びそれを用いた電気機器 Download PDFInfo
- Publication number
- WO2015151471A1 WO2015151471A1 PCT/JP2015/001732 JP2015001732W WO2015151471A1 WO 2015151471 A1 WO2015151471 A1 WO 2015151471A1 JP 2015001732 W JP2015001732 W JP 2015001732W WO 2015151471 A1 WO2015151471 A1 WO 2015151471A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- ultraviolet light
- type algan
- algan layer
- light emitting
- Prior art date
Links
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 204
- 230000004888 barrier function Effects 0.000 claims abstract description 69
- 239000000203 mixture Substances 0.000 claims abstract description 46
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 34
- 239000010980 sapphire Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000012535 impurity Substances 0.000 claims description 19
- 238000002441 X-ray diffraction Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 423
- 238000000034 method Methods 0.000 description 32
- 239000010408 film Substances 0.000 description 22
- 239000011777 magnesium Substances 0.000 description 21
- 238000000137 annealing Methods 0.000 description 16
- 239000007789 gas Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 239000000428 dust Substances 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000004151 rapid thermal annealing Methods 0.000 description 5
- 230000001954 sterilising effect Effects 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000004659 sterilization and disinfection Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 235000013311 vegetables Nutrition 0.000 description 3
- 241000233866 Fungi Species 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- -1 gallium nitride compound Chemical class 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 241000894006 Bacteria Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 241000700605 Viruses Species 0.000 description 1
- 238000000441 X-ray spectroscopy Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002429 hydrazines Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0213—Sapphire, quartz or diamond based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
- H01S5/2013—MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
Definitions
- the present invention relates to an ultraviolet light emitting element that radiates ultraviolet rays and an electric device using the same.
- This gallium nitride compound semiconductor laser diode can prevent the diffusion of Mg from the Mg - doped p-type Al Y Ga 1-Y N layer by absorbing it in the undoped Al X Ga 1-X N layer.
- the stoichiometry of X and Y is 0 ⁇ X ⁇ Y ⁇ 1.
- the present invention has been made in view of the above reasons, and an object of the present invention is to provide an ultraviolet light emitting element capable of improving the light emission efficiency and an electric device using the same.
- the ultraviolet light emitting device of the present invention includes a sapphire substrate, an n-type AlGaN layer, a light emitting layer, a cap layer, an electron barrier layer, and a p-type contact layer made of a p-type GaN layer.
- the light emitting layer has a multiple quantum well structure.
- the multiple quantum well structure includes a plurality of barrier layers each composed of a first AlGaN layer and a plurality of well layers each composed of a second AlGaN layer.
- the electron barrier layer includes a first p-type AlGaN layer having an Al composition ratio larger than that of the barrier layer, an Al composition ratio larger than that of the plurality of well layers, and is higher than that of the first p-type AlGaN layer.
- a second p-type AlGaN layer having a small Al composition ratio The first p-type AlGaN layer and the second p-type AlGaN layer contain Mg.
- the cap layer is interposed between a well layer closest to the first p-type AlGaN layer among the plurality of well layers in the multiple quantum well structure and the first p-type AlGaN layer.
- the cap layer is a third AlGaN layer having a larger Al composition ratio than the plurality of well layers and a smaller Al composition ratio than the first p-type AlGaN layer.
- the cap layer has a thickness of 1 nm to 7 nm.
- An electrical device of the present invention includes the ultraviolet light emitting element and a device body.
- FIG. 1 is a schematic cross-sectional view of the ultraviolet light-emitting device of the embodiment.
- FIG. 2 is a graph showing the relationship between the thickness of the cap layer and the relative luminous efficiency.
- FIG. 3 is a cross-sectional transmission (electron / microscope / image) of the ultraviolet light-emitting device of the embodiment.
- FIG. 4 is a schematic cross-sectional view of a modified example of the ultraviolet light emitting element of the embodiment.
- FIG. 5 is a graph showing the relationship between the thickness of the first layer (the first p-type AlGaN layer closest to the cap layer) and the relative luminous efficiency.
- FIG. 6 is a graph showing the relationship between the thickness of the first layer and the relative lifetime.
- Drawing 7 is a schematic structure figure of a vacuum cleaner which is an example of an electric equipment of an embodiment.
- FIG. 8 is a schematic configuration diagram of a refrigerator that is another example of the electrical apparatus of the embodiment.
- the ultraviolet light emitting element 10 includes a sapphire substrate 1, an n-type AlGaN layer 3, a light emitting layer 4, a cap layer 5, an electron barrier layer 6, and a p-type contact layer 7 made of a p-type GaN layer.
- the light emitting layer 4 has a multiple quantum well structure.
- the multiple quantum well structure includes a plurality of barrier layers 41 each composed of a first AlGaN layer, and a plurality of well layers 42 each composed of a second AlGaN layer.
- the electron barrier layer 6 includes a first p-type AlGaN layer 61 and a second p-type AlGaN layer 62.
- the first p-type AlGaN layer 61 and the second p-type AlGaN layer 62 contain Mg.
- the cap layer 5 is interposed between the well layer 42 closest to the first p-type AlGaN layer 61 among the plurality of well layers 42 in the multiple quantum well structure and the first p-type AlGaN layer 61.
- the cap layer 5 is a third AlGaN layer having a larger Al composition ratio than the second AlGaN layer and a smaller Al composition ratio than the first p-type AlGaN layer 61.
- the thickness of the cap layer 5 is 1 nm or more and 7 nm or less. Therefore, the ultraviolet light emitting element 10 can improve the light emission efficiency.
- the composition ratio is a value obtained by composition analysis by EDX method (EnergyEnDispersive X-ray Spectroscopy).
- EDX method EulegyEnDispersive X-ray Spectroscopy
- the composition ratio is not limited to the EDX method, and may be a value obtained by composition analysis by Auger Electron Spectroscopy, for example.
- the ultraviolet light emitting element 10 has a mesa structure 11.
- the mesa structure 11 is a part of the multilayer structure 20 including the n-type AlGaN layer 3, the light emitting layer 4, the cap layer 5, the electron barrier layer 6, and the p-type contact layer 7. It is formed by etching from the 20a side to the middle of the n-type AlGaN layer 3.
- the multilayer structure 20 including the n-type AlGaN layer 3, the light-emitting layer 4, the cap layer 5, the electron barrier layer 6, and the p-type contact layer 7 includes the n-type AlGaN layer 3, the light-emitting layer 4, and the cap layer from the sapphire substrate 1 side. 5, the electron barrier layer 6 and the p-type contact layer 7 are arranged in this order.
- the surface 7 a of the p-type contact layer 7, the surface 20 a of the multilayer structure 20, and the upper surface 11 a of the mesa structure 11 are configured by the same surface.
- the first electrode 8 is formed on the surface 3 a of the n-type AlGaN layer 3, and the second electrode 9 is formed on the surface 7 a of the p-type contact layer 7.
- the first electrode 8 is electrically connected to the n-type AlGaN layer 3.
- the second electrode 9 is electrically connected to the p-type contact layer 7.
- the first electrode 8 constitutes a negative electrode (also referred to as “n electrode”).
- the second electrode 9 forms a positive electrode (also referred to as “p electrode”).
- an insulating film is formed across a part of the upper surface 11 a of the mesa structure 11, a side surface 11 b of the mesa structure 11, and a part of the surface 3 a of the n-type AlGaN layer 3.
- the material of the insulating film for example, SiO 2 can be employed.
- the ultraviolet light emitting element 10 can be, for example, an ultraviolet light emitting diode having an emission peak wavelength in the ultraviolet wavelength region of 210 nm to 360 nm. Thereby, the ultraviolet light emitting element 10 can be used in fields such as high-efficiency white illumination, sterilization, medical treatment, and uses for treating environmental pollutants at high speed.
- the emission peak wavelength of the well layer 42 in the light emitting layer 4 is preferably in the ultraviolet wavelength region of 260 nm to 285 nm.
- the ultraviolet light emitting element 10 can emit ultraviolet light in the 260 nm to 285 nm band that is easily absorbed by DNA of viruses and bacteria, and can be sterilized efficiently.
- the chip size of the ultraviolet light emitting element 10 is set to 400 ⁇ m ⁇ (400 ⁇ m ⁇ 400 ⁇ m), but is not limited thereto.
- the chip size can be appropriately set within a range of, for example, about 200 ⁇ m ⁇ (200 ⁇ m ⁇ 200 ⁇ m) to 1 mm ⁇ (1 mm ⁇ 1 mm).
- the planar shape of the ultraviolet light emitting element 10 is not limited to a square shape, and may be, for example, a rectangular shape. When the planar shape of the ultraviolet light emitting element 10 is rectangular, the chip size of the ultraviolet light emitting element 10 can be set to, for example, 500 ⁇ m ⁇ 240 ⁇ m.
- the multilayer structure 20 including the n-type AlGaN layer 3, the light emitting layer 4, the cap layer 5, the electron barrier layer 6, and the p-type contact layer 7 can be formed by an epitaxial growth method.
- a metal-organic vapor-phase (MOVPE) method is preferably employed, and a reduced pressure MOVPE method is more preferably employed.
- MOVPE metal-organic vapor-phase
- the epitaxial growth method is not limited to the MOVPE method, and for example, a hydride vapor phase epitaxy (HVPE) method, a molecular beam epitaxy (MBE) method, or the like may be employed.
- the first surface 1a is preferably a (0001) plane, that is, a c-plane.
- the sapphire substrate 1 preferably has an off angle from the (0001) plane of 0 to 0.3 °.
- the first surface 1a of the sapphire substrate 1 is not limited to the c-plane, and for example, an m-plane, a-plane, R-plane, or the like can be adopted.
- the second surface 1 b of the sapphire substrate 1 constitutes a light extraction surface from which ultraviolet rays are emitted.
- the ultraviolet light emitting element 10 preferably includes a buffer layer 2 interposed between the sapphire substrate 1 and the n-type AlGaN layer 3.
- the n-type AlGaN layer 3 is preferably formed on the first surface a side of the sapphire substrate 1 via the buffer layer 2.
- the multilayer structure 20 includes the buffer layer 2.
- the buffer layer 2 can be composed of an Al x Ga 1-x N layer (0 ⁇ x ⁇ 1).
- the buffer layer 2 is a layer provided for the purpose of reducing threading dislocations.
- the buffer layer 2 is a half of an X-ray rocking curve (XRC) by an ⁇ -scan of X-ray diffraction with respect to the (10-12) plane of the Al x Ga 1-x N layer (0 ⁇ x ⁇ 1).
- the value width is preferably 400 arcsec or less.
- the ultraviolet light emitting element 10 can have a dislocation density of 3 ⁇ 10 19 cm ⁇ 2 or less, and can improve luminous efficiency.
- the dislocation density is the number of threading dislocations per unit area, and is a value obtained from a cross-sectional TEM image.
- the band gap energy of the buffer layer 2 is preferably larger than the band gap energy of the plurality of well layers 42. Thereby, the ultraviolet light emitting element 10 can suppress the ultraviolet rays radiated from the light emitting layer 4 from being absorbed by the buffer layer 2 and can improve the light extraction efficiency.
- the buffer layer 2 is more preferably an AlN layer. Thereby, in the ultraviolet light emitting element 10, the buffer layer 2 is composed of an AlN layer having the largest band gap energy among the Al x Ga 1-x N layers (0 ⁇ x ⁇ 1). It is possible to further suppress the emitted ultraviolet light from being absorbed by the buffer layer 2.
- the thickness of the buffer layer 2 is preferably 3 ⁇ m or more and 6 ⁇ m or less.
- the thickness of the buffer layer 2 can be set to 4 ⁇ m, for example.
- the ultraviolet light emitting element 10 preferably has a gap (see the cross-sectional TEM image in FIG. 3) inside the buffer layer 2.
- the ultraviolet light emitting element 10 can improve the crystallinity of the buffer layer 2 and the crystallinity of the light emitting layer 4 and the like due to the presence of voids inside the buffer layer 2. Thereby, the ultraviolet light emitting element 10 can improve the luminous efficiency.
- the voids inside the buffer layer 2 reduce the threading dislocations by eliminating or bending the threading dislocations extending from the interface between the sapphire substrate 1 and the buffer layer 2 when the buffer layer 2 is formed. It is assumed that it has a function of reducing threading dislocations.
- the voids in the buffer layer 2 reduce the tensile stress generated in the buffer layer 2 due to the difference in thermal expansion coefficient between sapphire and AlGaN when the buffer layer 2 is formed, thereby reducing the buffer layer 2. 2 is considered to have a function of suppressing the generation of cracks in the layer 2 and the warpage of the buffer layer 2.
- the void exists in the range from the interface between the sapphire substrate 1 and the buffer layer 2 to 2 ⁇ m in the thickness direction of the buffer layer 2.
- the ultraviolet light emitting element 10 can improve the flatness of the surface of the buffer layer 2.
- the buffer layer 2 is an AlN layer
- the difference in lattice constant between AlN and sapphire is as large as 10% or more. Therefore, when the buffer layer 2 is grown, Grows in three dimensions.
- the ultraviolet light emitting element 10 when the buffer layer 2 is grown, if the growth thickness exceeds 2 ⁇ m, adjacent AlN crystals are connected to each other, the surface becomes flat, and a void is formed inside. Is done.
- the n-type AlGaN layer 3 is a layer for transporting electrons to the light emitting layer 4.
- the composition ratio of the n-type AlGaN layer 3 is preferably set so that ultraviolet rays emitted from the light emitting layer 4 can be efficiently emitted.
- the Al composition ratio of the n-type AlGaN layer 3 is equal to the Al composition ratio of the barrier layer 41.
- the Al composition ratio of the n-type AlGaN layer 3 is not limited to the same as the Al composition ratio of the barrier layer 41 but may be different.
- the Al composition ratio of the n-type AlGaN layer 3 is 0.50 or more and 0.70 or less.
- the 260 nm to 285 nm ultraviolet rays emitted from the light emitting layer 4 are absorbed by the n-type AlGaN layer 3 and the light extraction efficiency is improved. It will decline.
- the composition ratio of Al in the n-type AlGaN layer 3 is larger than 0.70, the ultraviolet light emitting element 10 has a large composition difference from the light emitting layer 4 designed to emit ultraviolet light of 260 nm to 285 nm. Defects are likely to occur in the light emitting layer 4.
- the donor impurity of the n-type AlGaN layer 3 is Si, and the Si doping concentration of the n-type AlGaN layer 3 is preferably 5 ⁇ 10 18 cm ⁇ 3 or more and 5 ⁇ 10 19 cm ⁇ 3 or less.
- the Si doping concentration of the n-type AlGaN layer 3 is less than 5 ⁇ 10 18 cm ⁇ 3 , the ultraviolet light emitting element 10 cannot form an ohmic contact between the first electrode 8 and the n-type AlGaN layer 3, or has an ohmic property. Will fall.
- the Si doping concentration of the n-type AlGaN layer 3 is higher than 5 ⁇ 10 19 cm ⁇ 3 , the crystallinity of the n-type AlGaN layer 3 is lowered.
- the doping concentration of Si in the n-type AlGaN layer 3 can be measured by, for example, SIMS analysis (secondary ion mass spectroscopy analysis).
- the thickness of the n-type AlGaN layer 3 is preferably 1 ⁇ m or more and 3 ⁇ m or less.
- the thickness of the n-type AlGaN layer 3 is less than 1 ⁇ m, the current path in the n-type AlGaN layer 3 becomes narrow and the driving voltage becomes high.
- the thickness of the n-type AlGaN layer 3 is larger than 3 ⁇ m, cracks may occur due to accumulation of strain in the n-type AlGaN layer 3.
- the n-type AlGaN layer 3 is not limited to a single layer structure, and may be a stacked structure of a plurality of n-type AlGaN layers having different Al composition ratios, for example.
- the light emitting layer 4 emits light by recombination of two types of carriers (electrons and holes) injected into the well layer 42.
- the light emitting layer 4 can set the light emission peak wavelength to an arbitrary light emission peak wavelength in the range of 210 nm to 360 nm by changing the Al composition ratio of the second AlGaN layer constituting the well layer 42. is there.
- the light emitting layer 4 includes a well layer 42 configured to emit ultraviolet light having an emission peak wavelength in the range of 210 nm to 360 nm.
- the Al composition ratio of the second AlGaN layer may be set to 0.50.
- the thickness of the barrier layer 41 is set to 10 nm and the thickness of the well layer 42 is set to 2 nm.
- the thickness is not limited to these.
- the thickness of the barrier layer 41 is preferably 2 nm or more and 20 nm or less.
- the ultraviolet light-emitting element 10 is presumed that when the thickness of the barrier layer 41 is less than 2 nm, the effect of confining carriers in the well layer 42 is reduced, and carriers are likely to leak from the well layer 42 and the light emission efficiency is reduced. Is done. Further, in the ultraviolet light emitting element 10, there is a concern that carriers are not injected into the well layer 42 when the thickness of the barrier layer 41 is larger than 20 nm.
- the barrier layer 41 is preferably doped with Si, and the concentration of Si is preferably 5 ⁇ 10 17 cm ⁇ 3 or more and 5 ⁇ 10 18 cm ⁇ 3 or less.
- the ultraviolet light emitting element 10 can relieve the distortion generated by the piezo electric field due to the lattice mismatch, and the light emission efficiency can be improved.
- the Si concentration of the barrier layer 41 is less than 5 ⁇ 10 17 cm ⁇ 3, the effect of reducing the strain generated by the piezoelectric field is reduced.
- the Si concentration of the barrier layer 41 when the Si concentration of the barrier layer 41 is higher than 5 ⁇ 10 18 cm ⁇ 3 , the crystallinity of the barrier layer 41 tends to decrease.
- the Si concentration of the barrier layer 41 can be measured, for example, by SIMS analysis.
- the thickness of the plurality of well layers 42 is preferably 0.5 nm or more and 3 nm or less.
- the ultraviolet light emitting element 10 tends to decrease the light emission efficiency when the thickness of the well layer 42 is less than 0.5 nm. This is presumably because when the thickness of the well layer 42 is less than 0.5 nm, the carrier confinement effect of the light emitting layer 4 is reduced. Moreover, the ultraviolet light emitting element 10 has a tendency that the light emission efficiency is lowered when the thickness of the well layer 42 is larger than 3 nm.
- the electron barrier layer 6 suppresses that electrons that have not been recombined with holes in the light emitting layer 4 out of electrons injected into the light emitting layer 4 leak (overflow) to the p-type contact layer 7 side.
- Layer. the electron barrier layer 6 is configured to function as an electron blocking layer that blocks electrons from the light emitting layer 4 side.
- the Al composition ratio of the first p-type AlGaN layer 61 is set so that the band gap energy of the first p-type AlGaN layer 61 is higher than the band gap energy of the barrier layer 41.
- the ultraviolet light emitting element 10 has a band gap energy of the first p-type AlGaN layer 61 of 6.1 eV, an Al composition ratio of 0.95, and a band gap energy of the second p-type AlGaN layer 62 of 5.0 eV.
- the Al composition ratio is 0.60, it is not limited to these values.
- the first p-type AlGaN layer 61 and the second p-type AlGaN layer 62 contain Mg. Accordingly, the acceptor impurity of the first p-type AlGaN layer 61 and the second p-type AlGaN layer 62 is Mg.
- the thickness of the first p-type AlGaN layer 61 can be set to 20 nm, for example.
- the thickness of the first p-type AlGaN layer 61 is not particularly limited, but if the thickness is too thin, the effect of suppressing overflow decreases, and if the thickness is too thick, the resistance of the ultraviolet light emitting element 10 increases. turn into.
- the thickness of the first p-type AlGaN layer 61 can be set in the range of 7 nm to 24 nm, for example.
- the second p-type AlGaN layer 62 is configured to function also as a layer for transporting holes to the light emitting layer 4.
- the composition ratio of the second p-type AlGaN layer 62 is preferably set so that absorption of ultraviolet rays emitted from the light emitting layer 4 can be suppressed.
- the Al composition ratio of the well layer 42 is 0.45 and the Al composition ratio of the barrier layer 41 is 0.60
- the Al composition ratio of the second p-type AlGaN layer 62 is, for example, 0.6. be able to.
- the second p-type AlGaN layer 62 can be composed of a p-type Al 0.60 Ga 0.40 N layer.
- the Al composition ratio of the second p-type AlGaN layer 62 is not limited to being the same as the Al composition ratio of the barrier layer 41 and may be different.
- the hole concentration of the second p-type AlGaN layer 62 is not particularly limited, and a higher concentration is preferable in the hole concentration range in which the film quality of the second p-type AlGaN layer 62 does not deteriorate.
- the thickness of the second p-type AlGaN layer 62 can be set to 20 nm, for example.
- the thickness of the second p-type AlGaN layer 62 is not particularly limited. However, in the ultraviolet light emitting element 10, it is difficult to make the hole concentration of the second p-type AlGaN layer 62 equal to or higher than the electron concentration of the n-type AlGaN layer 3, and the thickness of the second p-type AlGaN layer 62 is thick. If it is too large, the resistance of the ultraviolet light emitting element 10 becomes too large. For this reason, the thickness of the second p-type AlGaN layer 62 is preferably 200 nm or less, and more preferably 100 nm or less.
- the cap layer 5 is a diffusion preventing layer for suppressing impurities in the electron barrier layer 6 from diffusing into the light emitting layer 4.
- the impurities in the electron barrier layer 6 include acceptor impurities in the electron barrier layer 6.
- the acceptor impurity of the electron barrier layer 6 is an acceptor impurity of the first p-type AlGaN layer 61 and the second p-type AlGaN layer 62, and more specifically, Mg.
- the Al composition ratio of the third AlGaN layer constituting the cap layer 5 is set to 0.60.
- the Al composition ratio of the third AlGaN layer is not limited to 0.60, but may be larger than the Al composition ratio of the well layer 42 and smaller than the Al composition ratio of the first p-type AlGaN layer 61.
- the thickness of the cap layer 5 can be set to 5 nm, for example.
- the p-type contact layer 7 is a layer for obtaining good ohmic contact with the second electrode 9.
- the thickness of the p-type contact layer 7 is set to 400 nm, but is not limited thereto, and is preferably 10 nm or more and 500 nm or less.
- the in-plane uniformity of the thickness of the p-type contact layer 7 tends to decrease or the in-plane variation of the electrical characteristics tends to increase. is there.
- the thickness of the p-type contact layer 7 is larger than 500 nm, there is a tendency that cracks are likely to occur due to accumulation of strain.
- the acceptor impurity of the p-type contact layer 7 is Mg, and the Mg doping concentration of the p-type contact layer 7 is preferably 1 ⁇ 10 20 cm ⁇ 3 or more and 5 ⁇ 10 20 cm ⁇ 3 or less.
- the ultraviolet light emitting element 10 has a tendency that the light emission efficiency decreases when the Mg doping concentration of the p-type contact layer 7 is less than 1 ⁇ 10 20 cm ⁇ 3 . This is presumably because the hole injection property of the p-type contact layer 7 is lowered.
- the Mg doping concentration of the p-type contact layer 7 when the Mg doping concentration of the p-type contact layer 7 is less than 1 ⁇ 10 20 cm ⁇ 3 , ohmic contact between the second electrode 9 and the p-type contact layer 7 cannot be obtained, Contact resistance tends to increase. Further, in the ultraviolet light emitting element 10, when the Mg doping concentration of the p-type contact layer 7 is higher than 5 ⁇ 10 20 cm ⁇ 3 , the crystallinity of the p-type contact layer 7 tends to decrease.
- the ultraviolet light emitting element 10 preferably includes a first pad electrode on the first electrode 8.
- the first pad electrode can be formed of a laminated film of a Ti film and an Au film.
- the first pad electrode is electrically connected to the first electrode 8.
- the first pad electrode is preferably formed so as to cover the first electrode 8.
- the ultraviolet light emitting element 10 preferably includes a second pad electrode on the second electrode 9.
- the second pad electrode can be formed of a laminated film of a Ti film and an Au film.
- the second pad electrode is electrically connected to the second electrode 9.
- the second pad electrode is preferably formed so as to cover the second electrode 9.
- the ultraviolet light emitting element 10 can be mounted on a mounting substrate, for example. “Mounting” is a concept including arranging the ultraviolet light emitting elements 10 and mechanically connecting them, and electrically connecting them.
- the mounting substrate includes a support formed in a plate shape, and a wiring portion supported by the support and electrically connected to the ultraviolet light emitting element 10.
- the wiring portion may include a first conductor portion to which the first pad electrode is electrically connected and a second conductor portion to which the second pad electrode is electrically connected.
- the ultraviolet light emitting device joins the first pad electrode and the first conductor portion of the ultraviolet light emitting element 10 via the first bump, and connects the second pad electrode and the second conductor portion of the ultraviolet light emitting element 10 to each other.
- the ultraviolet light emitting device may have a configuration in which one ultraviolet light emitting element 10 is mounted on one mounting substrate, or may have a configuration in which a plurality of ultraviolet light emitting elements 10 are mounted on one mounting substrate.
- the support has a function of supporting the wiring part.
- the support preferably has a function as a heat sink for efficiently transmitting the heat generated in the ultraviolet light emitting element 10 to the outside.
- the ultraviolet light emitting device preferably includes a glass lid disposed to cover the ultraviolet light emitting element 10 in addition to the mounting substrate and the ultraviolet light emitting element 10.
- the lid transmits ultraviolet rays emitted from the ultraviolet light emitting element 10.
- the lid may have a flat plate shape, a lens shape, or a part of the lens shape.
- the lid may have a dome shape.
- the ultraviolet light emitting device may include a frame body disposed so as to surround the ultraviolet light emitting element 10 between the mounting substrate and the lid, and the frame body is emitted from the ultraviolet light emitting element 10 to the side. It may also serve as a reflector that reflects light toward the lid.
- the mounting substrate may be constituted by an interposer, and the interposer may be bonded to a metal base printed wiring board or the like.
- a sapphire wafer as a base for the sapphire substrate 1 of each of the plurality of ultraviolet light emitting elements 10 is prepared.
- the sapphire wafer is pretreated, and then the sapphire wafer is introduced into an epitaxial growth apparatus. Laminate by the method.
- the first surface of the sapphire wafer is a surface corresponding to the first surface 1 a of the sapphire substrate 1.
- TMAl trimethylaluminum
- TMGa trimethyl gallium
- NH 3 is preferably employed as the N source gas.
- TESi tetraethylsilane
- Cp 2 Mg biscyclopentadienyl magnesium
- H 2 gas is preferably used as the carrier gas of each source gas.
- Each source gas is not particularly limited.
- triethylgallium (TEGa) may be used as a Ga source gas
- a hydrazine derivative may be used as a N source gas
- monosilane (SiH 4 ) may be used as a Si source gas.
- the growth condition of the multilayer structure 20 is that the buffer layer 2, the n-type AlGaN layer 3, the barrier layer 41, the well layer 42, the cap layer 5, the first p-type AlGaN layer 61, the second p-type AlGaN layer 62, and the p-type.
- the substrate temperature means the temperature of the sapphire wafer.
- the MOVPE apparatus is employed as the epitaxial growth apparatus, for example, the temperature of the susceptor that supports the sapphire wafer can be substituted for the substrate temperature.
- the sapphire wafer on which the multilayer structure 20 is laminated is taken out from the epitaxial growth apparatus.
- a structure including at least the sapphire wafer and the multilayer structure 20 is referred to as a wafer.
- the wafer taken out from the epitaxial growth apparatus is introduced into the annealing apparatus, and the p-type impurities of the first p-type AlGaN layer 61, the second p-type AlGaN layer 62, and the p-type contact layer 7 are respectively obtained.
- Annealing is performed to activate.
- an annealing apparatus for performing annealing for example, a lamp annealing apparatus, an electric furnace annealing apparatus, or the like can be employed.
- a p-type impurity means an acceptor impurity and is Mg.
- the mesa structure 11 is formed using a photolithographic technique and an etching technique after taking out the wafer from the annealing apparatus.
- an insulating film is formed.
- the insulating film can be formed using a thin film formation technique such as a CVD (chemical vapor deposition) method, a photolithography technique, and an etching technique.
- the first electrode 8 is formed after the above-described insulating film is formed.
- a first resist layer patterned so as to expose only a region where the first electrode 8 is to be formed is exposed on the surface of the wafer.
- a first laminated film in which an Au layer having a thickness of 100 nm is laminated is formed by vapor deposition.
- the annealing process is a process for making the contact between the first electrode 8 and the n-type AlGaN layer 3 ohmic contact.
- the laminated structure and each thickness of the first laminated film are examples and are not particularly limited.
- the annealing treatment is preferably RTA (Rapid Thermal Annealing) in an N 2 gas atmosphere.
- the conditions for the RTA treatment may be, for example, an annealing temperature of 700 ° C.
- the annealing temperature is preferably a temperature at which Al diffusion easily occurs, and a temperature of 650 ° C. or higher and lower than 750 ° C. is more preferable.
- the annealing time may be set in the range of about 30 seconds to 3 minutes, for example.
- the second electrode 9 is formed after the first electrode 8 is formed.
- a second resist layer patterned so as to expose only a region where the second electrode 9 is to be formed is exposed on the surface of the wafer.
- a second laminated film of a Ni layer having a thickness of 20 nm and an Au layer having a thickness of 150 nm is formed by electron beam evaporation, and lift-off is performed, whereby the second resist layer and the second resist are formed.
- the unnecessary film on the layer (the portion formed on the second resist layer in the second laminated film) is removed.
- RTA treatment is performed in an N 2 gas atmosphere so that the contact between the second electrode 9 and the p-type contact layer 7 becomes an ohmic contact.
- the laminated structure and each thickness of the second laminated film are examples, and are not particularly limited.
- the RTA treatment conditions may be, for example, an annealing temperature of 500 ° C. and an annealing time of 15 minutes, but these values are merely examples and are not particularly limited.
- the first pad electrode and the second pad electrode are formed by a lift-off method using, for example, a photolithography technique and a thin film formation technique.
- a wafer on which a plurality of ultraviolet light emitting elements 10 are formed can be obtained.
- a plurality of ultraviolet light emitting elements 10 can be obtained from one wafer by cutting the wafer with a dicing saw or the like.
- the manufacturing method of the ultraviolet light emitting element 10 can improve the manufacturing yield.
- FIG. 2 is a graph showing the relationship between the thickness of the cap layer 5 and the relative luminous efficiency.
- the relative luminous efficiency means the relative luminous efficiency when the thickness of the cap layer 5 is 0, that is, when the luminous efficiency of the comparative example not including the cap layer 5 is 1.
- the luminous efficiency of the ultraviolet light emitting element 10 is a value calculated from a value obtained by measuring ultraviolet rays emitted from the ultraviolet light emitting element 10 with an integrating sphere when a 20 mA direct current is passed through the ultraviolet light emitting element 10 and an emission peak wavelength. . It is the value computed similarly about the luminous efficiency of the ultraviolet light emitting element of a comparative example.
- the inventors of the present application have found that the luminous efficiency can be improved as compared with the comparative example by setting the thickness of the cap layer 5 within a range of 1 nm to 7 nm.
- the cap layer 5 has a thickness of 1 nm or more and 7 nm or less, it is possible to improve the light emission efficiency.
- the inventors of the present application confirmed that the diffusion of Mg from the electron barrier layer 6 to the light-emitting layer 4 in the ultraviolet light-emitting element 10 is suppressed from the measurement result of the depth profile of the Mg concentration by SIMS. .
- the diffusion of Mg from the electron barrier layer 6 to the light emitting layer 4 is suppressed by setting the thickness of the cap layer 5 to 1 nm to 7 nm and the electron barrier layer 6 to the light emitting layer 4. It is considered that the inhibition of hole injection into the light can be suppressed, and the luminous efficiency can be improved.
- the third AlGaN layer constituting the cap layer 5 is preferably an undoped AlGaN layer.
- Undoped means that a specific impurity is not intentionally added. That is, the cap layer 5 may contain impurities such as Mg, H, Si, C, and O that are inevitably mixed when the cap layer 5 is grown.
- concentration of each impurity in the undoped AlGaN layer for example, as a result of SIMS analysis, Mg is 1 ⁇ 10 17 cm ⁇ 3 , H is 1 ⁇ 10 18 cm ⁇ 3 , Si is 2 ⁇ 10 17 cm ⁇ 3 , C Was 7 ⁇ 10 16 cm ⁇ 3 and O was 7 ⁇ 10 16 cm ⁇ 3 .
- the ultraviolet light emitting element 10 employs an undoped AlGaN layer as the third AlGaN layer, Si doped AlGaN doped with Si at a concentration higher than 5 ⁇ 10 17 cm ⁇ 3 as the third AlGaN layer. Compared to the case where a layer is used, it is possible to extend the life. This point was confirmed by conducting an energization test by passing a direct current of 50 mA through the ultraviolet light-emitting element 10 and measuring a change in light emission intensity over time.
- the third AlGaN layer is a Si-doped AlGaN layer
- the ultraviolet light emitting element 10 includes Si in the cap layer 5 and Mg diffused from the electron barrier layer 6 side to the cap layer 5 as donors in the cap layer 5. -It is assumed that the cause is that it is likely to contribute to donor-acceptor pair emission.
- FIG. 4 is a schematic cross-sectional view of an ultraviolet light emitting element 10b which is a modification of the ultraviolet light emitting element 10.
- the ultraviolet light emitting element 10 b is different from the ultraviolet light emitting element 10 in the configurations of the light emitting layer 4 and the electron barrier layer 6.
- symbol is attached
- the light emitting layer 4 in the ultraviolet light emitting element 10b has four barrier layers 41 and four well layers 42.
- the electron barrier layer 6 in the ultraviolet light-emitting element 10 b has first p-type AlGaN layers 61 and second p-type AlGaN layers 62 alternately arranged in the thickness direction of the light-emitting layer 4. Thereby, the ultraviolet light emitting element 10b can improve the luminous efficiency. This is presumably because it is possible to improve the electron blocking function of the electron barrier layer 6 and to improve the efficiency of electron injection into the light emitting layer 4.
- the first p-type AlGaN layer 61 and the second p-type AlGaN layer 62 are alternately arranged in the thickness direction of the light emitting layer 4” means that at least one p-type AlGaN layer 61 and at least one p-type AlGaN layer 61 are arranged.
- the electron barrier layer 6 preferably includes at least two of the first p-type AlGaN layer 61 and the second p-type AlGaN layer 62.
- the ultraviolet light emitting element 10 b includes an electron barrier layer 6, a multiple electron barrier layer in which a first p-type AlGaN layer 61 and a second p-type AlGaN layer 62 are alternately arranged in the thickness direction of the light-emitting layer 4. By doing so, it becomes possible to further improve the light emission efficiency.
- the number of the first p-type AlGaN layers 61 and the second p-type AlGaN layers in the electron barrier layer 6 is two, but the first p-type AlGaN layer 61 and the second p-type AlGaN layer 6 are two.
- the number of each type AlGaN layer is not particularly limited.
- the number of the first p-type AlGaN layers 61 and the number of the second p-type AlGaN layers are the same, but they may be different.
- the electron barrier layer 6 includes two first p-type AlGaN layers 61 and two second p-type AlGaN layers 62, and the total thickness of the two first p-type AlGaN layers 61 is 7 nm or more and 24 nm. It is preferable that: Thereby, the ultraviolet light emitting element 10b can improve the luminous efficiency.
- Table 1 below shows the luminous efficiency when various combinations of thicknesses of the first p-type AlGaN layer 61 and the second p-type AlGaN layer 62 in the electron barrier layer 6 are changed. .
- the first p-type AlGaN layer 61 closest to the cap layer 5 is the “first layer”
- the second p-type AlGaN layer 62 closest to the cap layer 5 is the “second layer”
- the cap The first p-type AlGaN layer 61 that is the third closest to the layer 5 is the “third layer”
- the second p-type AlGaN layer 62 that is the fourth closest to the cap layer 5 is the “fourth layer”. It is described.
- Table 1 the average of the two first p-type AlGaN layers 61 in the stacked structure of the first p-type AlGaN layer 61, the second p-type AlGaN layer 62, and the first p-type AlGaN layer 61 is shown.
- a value obtained by dividing the thickness by the thickness of the second p-type AlGaN layer 62 is described as a “thickness ratio”.
- the relative luminous efficiency obtained with reference to the luminous efficiency when the thickness of the second layer is 0 is described as “relative luminous efficiency”.
- the relative life obtained on the basis of the life when the thickness of the second layer is 0 is described as “relative life”.
- “lifetime” refers to the time until the light output decreases from the initial value to 70% of the initial value when a high temperature energization test (acceleration test) is performed at a temperature of 120 ° C. and an energization current of 20 mA. It was time.
- the light output is a value measured using an integrating sphere and a spectroscope.
- the electron barrier layer 6 has a stacked structure of a first p-type AlGaN layer 61, a second p-type AlGaN layer 62, and a first p-type AlGaN layer 61, and the two first p-type AlGaN layers 61.
- a value obtained by dividing the average thickness by the thickness of the second p-type AlGaN layer 62 (“thickness ratio” in Table 1) is preferably larger than 1.75 and smaller than 14.
- the ultraviolet light emitting element 10b can improve the luminous efficiency. This is presumed that the quantum mechanical effect can suppress the overflow of electrons having high energy higher than the barrier height of the barrier layer 41 and improve the light emission efficiency.
- the thickness ratio is 1.75 or less, it is considered that the quantum mechanical effect is difficult to obtain, and the effect of suppressing the overflow of electrons is reduced. Further, when the thickness ratio is larger than 14, it is considered that the quantum mechanical effect is difficult to obtain, and further, the hole injection property is also lowered.
- FIG. 5 is a graph summarizing the relationship between the thickness of the first layer (the first p-type AlGaN layer 61 closest to the cap layer 5) and the relative luminous efficiency based on the results in Table 1.
- FIG. 6 is a graph summarizing the relationship between the thickness of the first layer and the relative lifetime based on the results shown in Table 1.
- the electron barrier layer 6 has a stacked structure of the first p-type AlGaN layer 61, the second p-type AlGaN layer 62, and the first p-type AlGaN layer 61, and the first barrier layer 6 is closest to the cap layer 5.
- the thickness of the p-type AlGaN layer 61 is preferably larger than the thickness of the other first p-type AlGaN layer 61 and not less than 7 nm and not more than 12 nm. Thereby, the ultraviolet light emitting element 10b can improve the light emission efficiency and improve the reliability.
- the thickness of the first p-type AlGaN layer 61 closest to the cap layer 5 is preferably 6 nm or more, and more preferably 7 nm or more. preferable.
- the ultraviolet light emitting element 10b even when the thickness of the first p-type AlGaN layer 61 closest to the cap layer 5 is 6 nm, the light emission efficiency can be improved and the reliability can be improved. There is also. Further, in the ultraviolet light emitting element 10b, even when the thickness of the first p-type AlGaN layer 61 closest to the cap layer 5 is 13 nm, the light emission efficiency can be improved and the reliability can be improved. There is also.
- the ultraviolet light emitting elements 10 and 10b are not limited to ultraviolet light emitting diodes, but may be ultraviolet laser diodes.
- the ultraviolet light emitting elements 10 and 10b can be used, for example, as components of electric equipment. Since the electric device includes the ultraviolet light emitting element 10 or 10b and the device main body, it is possible to improve the light emission efficiency.
- the vacuum cleaner 100 includes a vacuum cleaner main body (equipment main body) 101, a hose 102 connected to an inlet provided in the vacuum cleaner main body 101, a connection pipe 103 provided at the tip of the hose 102, and a connection pipe 103.
- a suction tool 104 provided at the tip.
- the suction tool 104 has an opening for sucking dust.
- the suction tool 104 may include a brush.
- the vacuum cleaner main body 101 includes an electric blower for sucking air containing dust and a dust collecting container 106 for collecting dust.
- the vacuum cleaner 100 includes two ultraviolet light emitting devices 120 in which a plurality of ultraviolet light emitting elements 10 are housed in one package 110, and one ultraviolet light emitting device 120 is built in the suction tool 104, and the other ultraviolet light emitting device 120. Is built in the vacuum cleaner main body 101.
- the ultraviolet light emitting device 120 built in the suction tool 104 is disposed so as to emit ultraviolet light to the opening of the suction tool 104. Thereby, the vacuum cleaner 100 can perform cleaning while sterilizing.
- the ultraviolet light emitting device 120 built in the vacuum cleaner main body 101 is arranged so as to emit ultraviolet rays into the dust collecting container 106. Thereby, the vacuum cleaner 100 can perform sterilization of the dust collection container 106 and sterilization of air passing through the dust collection container 106.
- the vacuum cleaner 100 may be configured to include only one of the two ultraviolet light emitting devices 120. Further, the number of ultraviolet light emitting devices 120 is not limited to two.
- a refrigerator 200 as shown in FIG. 8 can be cited.
- the refrigerator 200 includes a refrigerator main body 201, a cooler 202, three doors 203, 204, and 205 that open and close three openings of the refrigerator main body 201, and a vegetable storage container 210 stored in the refrigerator main body 201.
- the refrigerator 200 includes a plurality of ultraviolet light emitting devices 120 that house a plurality of ultraviolet light emitting elements 10 in one package 110.
- the plurality of ultraviolet light emitting devices 120 are arranged to radiate ultraviolet rays into the vegetable storage container 210.
- the refrigerator 200 can suppress the growth of mold and fungi adhering to the vegetables. If the refrigerator 200 is arranged so that the ultraviolet light emitting device 120 can radiate ultraviolet rays to an appropriate space in the refrigerator main body 201, it is possible to suppress the growth of mold and fungi attached to food.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (23)
- サファイア基板と、n型AlGaN層と、発光層と、キャップ層と、電子障壁層と、p型GaN層からなるp型コンタクト層と、を備え、
前記発光層は、多重量子井戸構造を有し、
前記多重量子井戸構造は、各々が第1のAlGaN層からなる複数の障壁層と、各々が第2のAlGaN層からなる複数の井戸層と、を備え、
前記電子障壁層は、前記障壁層よりもAlの組成比が大きい第1のp型AlGaN層と、前記複数の井戸層よりもAlの組成比が大きく且つ前記第1のp型AlGaN層よりもAlの組成比の小さい第2のp型AlGaN層と、を備え、
前記第1のp型AlGaN層及び前記第2のp型AlGaN層は、Mgを含有させてあり、
前記キャップ層は、前記多重量子井戸構造における前記複数の井戸層のうち前記第1のp型AlGaN層に最も近い井戸層と、前記第1のp型AlGaN層と、の間に介在し、
前記キャップ層は、前記複数の井戸層よりもAlの組成比が大きく且つ前記第1のp型AlGaN層よりもAlの組成比が小さい第3のAlGaN層であり、
前記キャップ層の厚さは、1nm以上7nm以下である、
ことを特徴とする紫外線発光素子。 - 前記第3のAlGaN層は、アンドープのAlGaN層である、
ことを特徴とする請求項1記載の紫外線発光素子。 - 前記電子障壁層は、前記第1のp型AlGaN層と前記第2のp型AlGaN層とが、前記発光層の厚さ方向において交互に並んでいる、
ことを特徴とする請求項1又は2記載の紫外線発光素子。 - 前記電子障壁層は、前記第1のp型AlGaN層及び前記第2のp型AlGaN層それぞれを少なくとも2つ、備える、
ことを特徴とする請求項3記載の紫外線発光素子。 - 前記電子障壁層は、前記第1のp型AlGaN層及び前記第2のp型AlGaN層が2つずつであり、2つの前記第1のp型AlGaN層の厚さの合計が、7nm以上24nm以下である、
ことを特徴とする請求項4記載の紫外線発光素子。 - 前記電子障壁層は、前記第1のp型AlGaN層と前記第2のp型AlGaN層と前記第1のp型AlGaN層との積層構造を有し、2つの前記第1のp型AlGaN層の平均の厚さを前記第2のp型AlGaN層の厚さで除した値が、1.75より大きく14より小さい、
ことを特徴とする請求項3乃至5のいずれか一項に記載の紫外線発光素子。 - 前記電子障壁層は、前記第1のp型AlGaN層と前記第2のp型AlGaN層と前記第1のp型AlGaN層との積層構造を有し、前記キャップ層に最も近い前記第1のp型AlGaN層の厚さが、他の前記第1のp型AlGaN層の厚さよりも大きく、かつ、7nm以上12nm以下である、
ことを特徴とする請求項3乃至6のいずれか一項に記載の紫外線発光素子。 - 前記n型AlGaN層と前記発光層と前記キャップ層と前記電子障壁層と前記p型コンタクト層とを備える多層構造は、前記サファイア基板側から、前記n型AlGaN層、前記発光層、前記キャップ層、前記電子障壁層、前記p型コンタクト層の順に並んでおり、
前記サファイア基板と前記n型AlGaN層との間に介在するバッファ層を備え、前記バッファ層は、AlxGa1-xN層(0<x≦1)により構成され、前記AlxGa1-xN層(0<x≦1)の(10-12)面に対するX線回折のωスキャンによるX線ロッキングカーブの半値幅が400arcsec以下である、
ことを特徴とする請求項1乃至7のいずれか一項に記載の紫外線発光素子。 - 前記バッファ層のバンドギャップエネルギが前記複数の井戸層のバンドギャップエネルギよりも大きい、
ことを特徴とする請求項8記載の紫外線発光素子。 - 前記バッファ層は、AlN層である、
ことを特徴とする請求項8又は9記載の紫外線発光素子。 - 前記バッファ層の厚さは、3μm以上6μm以下である、
ことを特徴とする請求項8乃至10のいずれか一項に記載の紫外線発光素子。 - 前記バッファ層の内部に空隙が存在する、
ことを特徴とする請求項11記載の紫外線発光素子。 - 前記空隙は、前記バッファ層の厚さ方向において前記サファイア基板と前記バッファ層との界面から2μmまでの範囲に存在する、
ことを特徴とする請求項12記載の紫外線発光素子。 - 前記n型AlGaN層のAlの組成比が0.50以上0.70以下である、
ことを特徴とする請求項1乃至13のいずれか一項に記載の紫外線発光素子。 - 前記n型AlGaN層のドナー不純物がSiであり、前記n型AlGaN層のSiのドーピング濃度が5×1018cm-3以上5×1019cm-3以下である、
ことを特徴とする請求項14記載の紫外線発光素子。 - 前記n型AlGaN層の厚さは、1μm以上3μm以下である、
ことを特徴とする請求項14又は15記載の紫外線発光素子。 - 前記障壁層の厚さは、2nm以上20nm以下である、
ことを特徴とする請求項1乃至16のいずれか一項に記載の紫外線発光素子。 - 前記障壁層は、Siがドーピングされており、Siの濃度が、5×1017cm-3以上5×1018cm-3以下である、
ことを特徴とする請求項17記載の紫外線発光素子。 - 前記複数の井戸層の厚さは、0.5nm以上3nm以下である、
ことを特徴とする請求項1乃至18のいずれか一項に記載の紫外線発光素子。 - 前記p型コンタクト層の厚さは、10nm以上500nm以下である、
ことを特徴とする請求項1乃至19のいずれか一項に記載の紫外線発光素子。 - 前記p型コンタクト層のアクセプタ不純物がMgであり、前記p型コンタクト層のMgのドーピング濃度が1×1020cm-3以上5×1020cm-3以下である、
ことを特徴とする請求項20記載の紫外線発光素子。 - 前記複数の井戸層の発光ピーク波長が260nm~285nmの紫外波長域にある、
ことを特徴とする請求項1乃至21のいずれか一項に記載の紫外線発光素子。 - 請求項1乃至22のいずれか一項に記載の紫外線発光素子と、機器本体と、を備える、
ことを特徴とする電気機器。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/300,460 US9843163B2 (en) | 2014-03-31 | 2015-03-26 | Ultraviolet light emitting element and electrical device using same |
JP2016511376A JP6472093B2 (ja) | 2014-03-31 | 2015-03-26 | 紫外線発光素子及びそれを用いた電気機器 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014073825 | 2014-03-31 | ||
JP2014-073825 | 2014-03-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015151471A1 true WO2015151471A1 (ja) | 2015-10-08 |
Family
ID=54239817
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2015/001732 WO2015151471A1 (ja) | 2014-03-31 | 2015-03-26 | 紫外線発光素子及びそれを用いた電気機器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9843163B2 (ja) |
JP (1) | JP6472093B2 (ja) |
WO (1) | WO2015151471A1 (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105514233A (zh) * | 2015-11-30 | 2016-04-20 | 华灿光电股份有限公司 | 高发光效率发光二极管外延片及其制备方法 |
WO2017134709A1 (ja) * | 2016-02-01 | 2017-08-10 | パナソニック株式会社 | 紫外線発光素子 |
WO2017134713A1 (ja) * | 2016-02-01 | 2017-08-10 | パナソニック株式会社 | 紫外線発光素子 |
EP3246955A1 (en) * | 2016-05-19 | 2017-11-22 | Lextar Electronics Corp. | Interlayer for light emitting diode device |
WO2017222341A1 (ko) * | 2016-06-24 | 2017-12-28 | 엘지이노텍 주식회사 | 반도체 소자 및 이를 포함하는 반도체 소자 패키지 |
KR20180024998A (ko) * | 2016-08-31 | 2018-03-08 | 엘지이노텍 주식회사 | 반도체 소자, 반도체 소자 패키지, 및 반도체 소자 제조방법 |
KR20200084636A (ko) * | 2019-01-03 | 2020-07-13 | 엘지이노텍 주식회사 | 반도체 소자 |
JP2020115555A (ja) * | 2020-03-25 | 2020-07-30 | 日機装株式会社 | 窒化物半導体素子 |
JP2021015952A (ja) * | 2019-07-11 | 2021-02-12 | 圓融光電科技股▲ふん▼有限公司 | 紫外線led及びその製造方法 |
JP2021174876A (ja) * | 2020-04-24 | 2021-11-01 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
WO2023026816A1 (ja) * | 2021-08-26 | 2023-03-02 | ヌヴォトンテクノロジージャパン株式会社 | 窒化物半導体発光素子 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10340416B2 (en) * | 2016-02-26 | 2019-07-02 | Riken | Crystal substrate, ultraviolet light-emitting device, and manufacturing methods therefor |
EP3514265B1 (en) * | 2016-09-14 | 2024-04-17 | Stanley Electric Co., Ltd. | Light emitting device adapted to emit ultraviolet light |
US11557693B2 (en) * | 2017-07-31 | 2023-01-17 | Xiamen San'an Optoelectronics Co., Ltd. | Semiconductor light emitting device |
CN107394019B (zh) * | 2017-07-31 | 2019-07-12 | 安徽三安光电有限公司 | 一种半导体发光元件及其制备方法 |
US10978612B2 (en) * | 2017-07-31 | 2021-04-13 | Xiamen San'an Optoelectronics Co., Ltd | Semiconductor light emitting device |
US10355165B2 (en) * | 2017-11-07 | 2019-07-16 | Gallium Enterprises Pty Ltd | Buried activated p-(Al,In)GaN layers |
JP6727186B2 (ja) * | 2017-12-28 | 2020-07-22 | 日機装株式会社 | 窒化物半導体素子の製造方法 |
JP6654731B1 (ja) | 2018-09-28 | 2020-02-26 | Dowaエレクトロニクス株式会社 | Iii族窒化物半導体発光素子およびその製造方法 |
CN110112273B (zh) * | 2019-05-10 | 2020-06-30 | 马鞍山杰生半导体有限公司 | 一种深紫外led外延结构及其制备方法和深紫外led |
CN114203870B (zh) * | 2021-12-13 | 2023-03-31 | 聚灿光电科技(宿迁)有限公司 | 一种led外延结构及其制备方法和应用 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002324913A (ja) * | 2001-04-25 | 2002-11-08 | Ricoh Co Ltd | Iii族窒化物半導体およびその作製方法および半導体装置およびその作製方法 |
JP2006261358A (ja) * | 2005-03-17 | 2006-09-28 | Fujitsu Ltd | 半導体発光素子 |
JP2011187591A (ja) * | 2010-03-08 | 2011-09-22 | Uv Craftory Co Ltd | 窒化物半導体紫外線発光素子 |
JP2012044120A (ja) * | 2010-08-23 | 2012-03-01 | Nippon Telegr & Teleph Corp <Ntt> | Iii族窒化物半導体の深紫外発光素子構造 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3761589B2 (ja) | 1993-03-26 | 2006-03-29 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体発光素子 |
JP2002314203A (ja) * | 2001-04-12 | 2002-10-25 | Pioneer Electronic Corp | 3族窒化物半導体レーザ及びその製造方法 |
JP5384783B2 (ja) | 2005-02-18 | 2014-01-08 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | 半導体発光素子のための逆分極発光領域 |
WO2007083647A1 (ja) * | 2006-01-18 | 2007-07-26 | Matsushita Electric Industrial Co., Ltd. | 窒化物半導体発光装置 |
JP5227870B2 (ja) | 2009-03-30 | 2013-07-03 | 日本碍子株式会社 | エピタキシャル基板、半導体素子構造、およびエピタキシャル基板の作製方法 |
JP5589380B2 (ja) | 2009-12-28 | 2014-09-17 | 日亜化学工業株式会社 | 窒化物半導体素子 |
CN105514800A (zh) * | 2010-10-25 | 2016-04-20 | 宾奥普迪克斯股份有限公司 | 紧凑芯片中的长半导体激光腔 |
JP2013214700A (ja) | 2012-03-07 | 2013-10-17 | Toshiba Corp | 半導体発光素子 |
-
2015
- 2015-03-26 WO PCT/JP2015/001732 patent/WO2015151471A1/ja active Application Filing
- 2015-03-26 US US15/300,460 patent/US9843163B2/en not_active Expired - Fee Related
- 2015-03-26 JP JP2016511376A patent/JP6472093B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002324913A (ja) * | 2001-04-25 | 2002-11-08 | Ricoh Co Ltd | Iii族窒化物半導体およびその作製方法および半導体装置およびその作製方法 |
JP2006261358A (ja) * | 2005-03-17 | 2006-09-28 | Fujitsu Ltd | 半導体発光素子 |
JP2011187591A (ja) * | 2010-03-08 | 2011-09-22 | Uv Craftory Co Ltd | 窒化物半導体紫外線発光素子 |
JP2012044120A (ja) * | 2010-08-23 | 2012-03-01 | Nippon Telegr & Teleph Corp <Ntt> | Iii族窒化物半導体の深紫外発光素子構造 |
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105514233A (zh) * | 2015-11-30 | 2016-04-20 | 华灿光电股份有限公司 | 高发光效率发光二极管外延片及其制备方法 |
US20190067521A1 (en) * | 2016-02-01 | 2019-02-28 | Panasonic Corporation | Ultraviolet light-emitting element |
WO2017134713A1 (ja) * | 2016-02-01 | 2017-08-10 | パナソニック株式会社 | 紫外線発光素子 |
JP2017139252A (ja) * | 2016-02-01 | 2017-08-10 | パナソニック株式会社 | 紫外線発光素子 |
JP2017139447A (ja) * | 2016-02-01 | 2017-08-10 | パナソニック株式会社 | 紫外線発光素子 |
US10879423B2 (en) | 2016-02-01 | 2020-12-29 | Panasonic Corporation | Ultraviolet light-emitting element |
WO2017134709A1 (ja) * | 2016-02-01 | 2017-08-10 | パナソニック株式会社 | 紫外線発光素子 |
EP3246955A1 (en) * | 2016-05-19 | 2017-11-22 | Lextar Electronics Corp. | Interlayer for light emitting diode device |
CN107403858A (zh) * | 2016-05-19 | 2017-11-28 | 隆达电子股份有限公司 | 发光二极管磊晶结构 |
WO2017222341A1 (ko) * | 2016-06-24 | 2017-12-28 | 엘지이노텍 주식회사 | 반도체 소자 및 이를 포함하는 반도체 소자 패키지 |
US10734547B2 (en) | 2016-06-24 | 2020-08-04 | Lg Innotek Co., Ltd. | Semiconductor device and semiconductor device package comprising same |
KR20180024998A (ko) * | 2016-08-31 | 2018-03-08 | 엘지이노텍 주식회사 | 반도체 소자, 반도체 소자 패키지, 및 반도체 소자 제조방법 |
KR102552889B1 (ko) * | 2016-08-31 | 2023-07-10 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자, 반도체 소자 패키지, 및 반도체 소자 제조방법 |
KR20200084636A (ko) * | 2019-01-03 | 2020-07-13 | 엘지이노텍 주식회사 | 반도체 소자 |
KR102665044B1 (ko) | 2019-01-03 | 2024-05-13 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 |
JP2021015952A (ja) * | 2019-07-11 | 2021-02-12 | 圓融光電科技股▲ふん▼有限公司 | 紫外線led及びその製造方法 |
JP7295782B2 (ja) | 2019-07-11 | 2023-06-21 | 圓融光電科技股▲ふん▼有限公司 | 紫外線led及びその製造方法 |
JP2021185618A (ja) * | 2020-03-25 | 2021-12-09 | 日機装株式会社 | 窒化物半導体素子の製造方法 |
JP7089544B2 (ja) | 2020-03-25 | 2022-06-22 | 日機装株式会社 | 窒化物半導体素子 |
JP7166404B2 (ja) | 2020-03-25 | 2022-11-07 | 日機装株式会社 | 窒化物半導体素子の製造方法 |
JP2020115555A (ja) * | 2020-03-25 | 2020-07-30 | 日機装株式会社 | 窒化物半導体素子 |
JP2021174876A (ja) * | 2020-04-24 | 2021-11-01 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
WO2023026816A1 (ja) * | 2021-08-26 | 2023-03-02 | ヌヴォトンテクノロジージャパン株式会社 | 窒化物半導体発光素子 |
Also Published As
Publication number | Publication date |
---|---|
JP6472093B2 (ja) | 2019-02-20 |
US9843163B2 (en) | 2017-12-12 |
JPWO2015151471A1 (ja) | 2017-04-13 |
US20170110852A1 (en) | 2017-04-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6472093B2 (ja) | 紫外線発光素子及びそれを用いた電気機器 | |
JP6573076B2 (ja) | 紫外線発光素子 | |
JP6902255B2 (ja) | 紫外線発光素子 | |
KR101646064B1 (ko) | 질화물 반도체 발광 소자의 제조 방법, 웨이퍼, 질화물 반도체 발광 소자 | |
JP5702739B2 (ja) | ホウ素導入iii族窒化物発光ダイオード装置 | |
KR101067122B1 (ko) | Ⅲ족 질화물 반도체의 제조 방법, ⅲ족 질화물 반도체 발광 소자의 제조 방법 및 ⅲ족 질화물 반도체 발광 소자, 및 램프 | |
JP5849215B2 (ja) | 紫外半導体発光素子 | |
US7514707B2 (en) | Group III nitride semiconductor light-emitting device | |
US20130307001A1 (en) | n-AlGaN THIN FILM AND ULTRAVIOLET LIGHT EMITTING DEVICE INCLUDING THE SAME | |
WO2015146069A1 (ja) | 発光ダイオード素子 | |
US7456445B2 (en) | Group III nitride semiconductor light emitting device | |
JP2016511938A (ja) | 単結晶窒化アルミニウム基板を組み込む光電子デバイス | |
JP5401145B2 (ja) | Iii族窒化物積層体の製造方法 | |
US20130056747A1 (en) | Nitride semiconductor light emitting device and manufacturing method thereof | |
JP2008288532A (ja) | 窒化物系半導体装置 | |
JP2014207328A (ja) | 半導体発光素子 | |
JP6323782B2 (ja) | 半導体発光素子及び半導体発光素子の製造方法 | |
US20090078961A1 (en) | Nitride-based light emitting device | |
TWI545798B (zh) | Nitride semiconductor light emitting device and manufacturing method thereof | |
JP2013069795A (ja) | 半導体発光素子 | |
JP2015043468A (ja) | 紫外半導体発光素子 | |
JP2018050063A (ja) | 半導体発光素子 | |
JP7340047B2 (ja) | 窒化物半導体発光素子の製造方法 | |
JP5898656B2 (ja) | Iii族窒化物半導体素子 | |
JP2017130558A (ja) | 紫外線発光素子の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 15773557 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2016511376 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15300460 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 15773557 Country of ref document: EP Kind code of ref document: A1 |