JP2007536725A - 縦構造半導体装置 - Google Patents
縦構造半導体装置 Download PDFInfo
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Abstract
Description
A.装置構造及び製造
図4は本発明の1実施例による半導体装置の製造方法を示す工程図である。工程図のステップは本発明の例示的実施例と構造とを説明するためであり、本発明はその方法の変形並びに得られた構造の変形をも含んでいる。ステップ402は図5で図示するエピタキシャルウェハーで処理プロセスを開始する。参照番号500は装置を提供する半導体を表す。装置が多い場合、500a、500b及び500c等で表わされる。それらステップは図5から図20で図示する半導体構造の製造法及び包装に関して解説されている。
図14に示すように、縦型装置の電流拡張性を向上させるため、GaNのLED面515上でn型ITO透明コンタクト534が形成される。ITO組成は10wt%SnO2/90wt%In2O3であり、約75から200mm厚のITO膜が常温で電子ビーム蒸着またはスパッタリングシステムによって蒸着されている。ITO膜蒸着後に、管状炉内の窒素雰囲気内で焼鈍処理が5分間実行される。焼鈍処理温度は300℃から500℃の間で調整される。ITO膜の最小抵抗性は、窒素雰囲気内で350℃にて約低10-4Ωcmである。460nmでの透過率は350℃以上の焼鈍処理温度で85%以上である。
1.総流量:100sccm
2.磁界強度:15ガウス
3.基板温度:70℃
4.ガス混合物:40%BCl3/40%Cl2/20%Ar
5.電力/バイアス電圧:600W/−300V
6.作動圧:30mTorr
7.エッチング(深度)速度:0.4nm/分
8.エッチマスク:フォトレジスト(AZ9262)(厚:24nm 物理的ダイシング処理あるいはレーザースクライブのいずれかによるダイ分離も実行される。装置分離のためのダイシングトレンチはレーザースクライブの場合は50μm幅であり、物理的ダイシングの場合は40μmである。トレンチ深度は両者共に約10μmである。
B.例示的利点
ここで示す利点は例示的なものであり、本発明の利点を限定するものではない。
a.p‐GaNと比べてさらに高いキャリア密度を有した、n‐GaN層を通過して流れるさらに良好な電流によるさらに強力な光出力。n‐GaNの電子密度(キャリア密度)は、p‐GaN(〜1017/cm3)の孔密度と比べて2乗分大きい1019/cm3の範囲あると知られている。従って、p−n接合への電流注入によってさらに多くの光子をn‐GaN層を介して発生させることができる。n側が上である構造の新型縦型装置の光出力は、同じGaN/InGaNエピタキシャル層で製造されたp側が上である構造を有した横型装置よりも2倍あるいは3倍向上した。
d.縦型装置ではさらに高い電力効率を得ることができる。縦型装置では 電流集中がないため、光出力は電流注入に対して直線状である。一方、横型装置の最大光出力は電流集中現象のために早く飽和状態となる。これは個体発光のための白色LED等の高い電力装置にとって重要である。
a.GaNエピタキシャル層に電気メッキ等の金属着膜によって直接取り付けられた金属基板の強力な接着力のため、レーザービームによる高エネルギー衝撃波照射工程の間、支持基板とGaNエピタキシャル層との間の接着剥離を効果的に抑制することができる。その結果、レーザーリフトオフプロセスの間、クラックの開始を最小限に維持できる。結果として、支持部とGaNエピタキシャル層との間の低接着力によってレーザーリフトオフ(LLO)中にクラック発生の可能性が高いエポキシ樹脂または接着剤による接着等の、従来のポリマーベースのボンディングプロセスと比較して、さらに高いレーザーリフトオフ(LLO)効率が得られる。
a.金属接着の代わりに、電気メッキ法または無電メッキ法によって金属支持基板を被膜。
本発明の利点及び実施例について説明した。好適実施例について開示したが、請求の範囲で定義される本発明の範囲を逸脱することなく、これらの実施例を変更できる。
Claims (28)
- 半導体装置の製造方法であって、
基板上に複数の半導体層を形成するステップと;
前記半導体層上に複数の金属層を形成するステップと;
前記半導体層から前記基板を取り除くステップと;
前記基板が取り除かれた前記半導体層上に1以上の電気コンタクトを形成するステップと;
前記半導体層を複数の個別半導体装置に分割するステップと、
を含んでいることを特徴とする方法。 - 半導体層と基板との間にバッファ層を形成するステップをさらに含んでいることを特徴とする請求項1記載の方法。
- 取り除きステップは、半導体層と基板との間のインターフェースにレーザービームを適用するステップと、均一なレーザービーム分布を提供するためにレーザー源と前記基板との間に拡散媒質を挿入するステップとを含んでいることを特徴とする請求項1記載の方法。
- ウェハーキャリヤーを金属層に接着させるステップをさらに含んでいることを特徴とする請求項1記載の方法。
- ウェハーキャリヤーを金属層に接着させるステップをさらに含んでいることを特徴とする請求項2記載の方法。
- ウェハーキャリヤーを金属層に接着させるステップをさらに含んでいることを特徴とする請求項3記載の方法。
- 分割ステップは、それぞれの装置間にトレンチを形成するステップと、前記装置の露出部分を不活性化するステップと、個別の半導体装置を支持膜に移すステップとを含んでいることを特徴とする請求項2記載の方法。
- 個別の半導体装置を、単ステップのダイボンディング技術及びワイヤボンディング技術を利用してリードフレームに組み立てるステップをさらに含んでいることを特徴とする請求項2記載の方法。
- 個別の半導体装置を、単ステップのダイボンディング技術及びワイヤボンディング技術を利用してリードフレームに組み立てるステップをさらに含んでいることを特徴とする請求項7記載の方法。
- 請求項1記載の方法によって製造される半導体装置。
- 発行半導体装置を製造する方法であって、
ダイオード構造部を基板上に形成するステップと;
複数の金属層を前記ダイオード構造部上に形成するステップと;
前記基板を前記ダイオード構造部から取り除くステップと;
1以上のコンタクトを前記基板が取り除かれた前記ダイオード構造部上に形成するステップと;
前記ダイオード構造部を複数の個別ダイオードに分割するステップと、
を含んでいることを特徴とする方法。 - ダイオード構造部を形成するステップは、
GaN及びAINの一方を含んだ第1バッファ層を基板上に被膜させるステップと;
n-GaN層を前記バッファ層上に被膜させるステップと、
を含んでいることを特徴とする請求項11記載の方法。 - ダイオード構造を形成するステップは、
GaN及びAINの一方を含んだ第1バッファ層を基板上に被膜させるステップと;
AlGaNを含んだ第2バッファ層を前記基板上に被膜させるステップと;
n-GaN層を前記バッファ層上に被膜させるステップと、
を含んでいることを特徴とする請求項11記載の方法。 - 取り除きステップは、半導体層と基板との間のインターフェースにレーザービームを適用するステップと、レーザー源と前記基板との間に拡散媒質を挿入するステップと、バッファ層の少なくとも一部を液化するステップとを含んでいることを特徴とする請求項12記載の方法。
- 分割ステップは、それぞれの装置間にトレンチを形成するステップと、前記装置の露出部分を不活性化するステップと、個別の半導体装置を支持膜に移すステップとを含んでいることを特徴とする請求項11記載の方法。
- ウェハーキャリヤーを金属層に接着させるステップをさらに含んでいることを特徴とする請求項11記載の方法。
- ウェハーキャリヤーを金属層に接着させるステップをさらに含んでいることを特徴とする請求項14記載の方法。
- 請求項11記載の方法によって製造される半導体装置。
- 半導体構造物であって、
GaN及びAINの少なくとも一方を含んだ第1バッファ層と;
AlGaNを含んだ第2バッファ層と;
n-GaNを含んだ層と;
AlInGaNを含んだ層と;
p-GaNを含んだ層と、
を含んでいることを特徴とする半導体構造物。 - 基板をさらに含んでいることを特徴とする請求項19記載の半導体構造物。
- p-AlGaNを含んだ層をさらに含んでいることを特徴とする請求項19記載の半導体構造物。
- Cuを含んだ金属層と;
Auを含んだ金属層と、
をさらに含んでいることを特徴とする請求項19記載の半導体構造物。 - 本半導体構造物にカップリングされたウェハーキャリヤーをさらに含んでいることを特徴とする請求項23記載の半導体構造物。
- 本半導体構造物にカップリングされたウェハーキャリヤーをさらに含んでいることを特徴とする請求項22記載の半導体構造物。
- n-ITOを含んだ層をさらに含んでいることを特徴とする請求項22記載の半導体構造物。
- 複数のコンタクトをさらに含んでいることを特徴とする請求項25記載の半導体構造物。
- 個別半導体装置間に提供された複数のトレンチをさらに含んでいることを特徴とする請求項26記載の半導体構造物。
- 装置の露出部分上に不活性化層をさらに含んでいることを特徴とする請求項27記載の半導体構造物。
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Publication number | Publication date |
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CN101901858B (zh) | 2014-01-29 |
KR20070013291A (ko) | 2007-01-30 |
US7465592B2 (en) | 2008-12-16 |
WO2005104780A2 (en) | 2005-11-10 |
KR20120031102A (ko) | 2012-03-29 |
JP5336075B2 (ja) | 2013-11-06 |
CN101901858A (zh) | 2010-12-01 |
TWI385816B (zh) | 2013-02-11 |
KR101264322B1 (ko) | 2013-05-22 |
TW200610190A (en) | 2006-03-16 |
CN101366121A (zh) | 2009-02-11 |
CN101366121B (zh) | 2011-05-04 |
KR101254539B1 (ko) | 2013-04-19 |
US20050242365A1 (en) | 2005-11-03 |
EP1749308A2 (en) | 2007-02-07 |
EP1749308A4 (en) | 2011-12-28 |
WO2005104780A3 (en) | 2008-10-02 |
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