JP5142523B2 - 縦型構造複合半導体装置 - Google Patents
縦型構造複合半導体装置 Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/956—Making multiple wavelength emissive device
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Semiconductor Lasers (AREA)
- Recrystallisation Techniques (AREA)
- Electrodes Of Semiconductors (AREA)
Description
1.GaN/サファイヤウェハーをアセトンに浸し、続いてイシプロパノールに浸し、N2でブロー乾燥させる。
10.推奨時間でスーパーグルーを硬化させる(一晩硬化)。
1.サファイヤ支持ウェハーをアセトンに浸し、続いてイソプロパノールに浸し、続いて脱イオンH2Oに浸してN2でブロー乾燥させる。
6.2.2.90℃で10分。
Claims (4)
- 縦型構造光学電子装置の製造方法であって、
結晶基板上に複数の縦型光学電子装置を形成するステップと、
レーザリフトオフ処理によって該基板を取り除くステップと、
n型コンタクト面形成のためにITO(酸化スズインジウム)層を積層させるステップと、該ITO層上にAuバッファ層を積層させるステップと、電気メッキ処理及び/又は無電メッキ処理で該Auバッファ層上にCu層を積層させるステップとを含んでいる金属支持構造体を形成するステップとを含んでおり、
前記金属支持構造体を形成するステップは、
前記光学電子装置上に第1の金属層を形成するステップと、
該第1の金属層上に第2の金属層をメッキ形成するステップと、
を含んでおり、前記第1の金属層は前記第2の金属層を形成するよりも遅いメッキ速度で形成されることを特徴とする方法。 - 前記縦型構造体はGaN系縦型構造体であり、結晶基板はサファイヤを含み、金属支持構造体はCuを含んでおり、
厚い金属層であることによるストレス蓄積を徐々に軽減させるために軟質Cu合金層を積層するステップを含んでおり、当初の軟質Cu合金層の厚みは10μm以下に設定されており、メッキ処理速度は3から5μm/時に設定されており、
構造的強度を提供するために硬質Cu層を積層するステップをさらに含んでおり、硬質Cuメッキ積層速度を20μm/時以内とし、Cu合金積層ステップにおいては、スズ(Sn)及び鉄(Fe)を含有した金属合金メッキ溶液をCu硫酸塩溶液とブレンドしてCu合金サポート層の機械的強度と導電性とを向上させ、Cu合金サポート層の全厚を70から90μmとし、Cu合金メッキ処理の最後に0.5から1μm厚のAu層を電気メッキし、Cu合金層を酸化から保護することを特徴とする請求項1記載の製造方法。 - 複数の層を含んで成る縦型構造光学電子装置であって、
GaN系LEDと、その上面に近接して提供された少なくとも1つのコンタクト層と、
ITO(インジウム錫酸化物)コンタクト層と、
該ITOコンタクト層に隣接するAu層を含んだバッファ層と、
該Au層に隣接するCu層を含んだサポート層と、
を含んで構成され、前記Cu層は、
第1のCu層と、
該第1のCu層に隣接した第2のCu層と、
を含んで成り、前記第1のCu層は前記第2のCu層を形成するよりも遅いメッキ速度で形成されたものであることを特徴とする縦型構造光学電子装置。 - サポート層は電気メッキ処理及び/又は無電メッキ処理で形成されることを特徴とする
請求項3記載の縦型構造光学電子装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US47600803P | 2003-06-04 | 2003-06-04 | |
US60/476,008 | 2003-06-04 | ||
PCT/US2004/017297 WO2004109764A2 (en) | 2003-06-04 | 2004-06-03 | Method of fabricating vertical structure compound semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007526618A JP2007526618A (ja) | 2007-09-13 |
JP5142523B2 true JP5142523B2 (ja) | 2013-02-13 |
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Application Number | Title | Priority Date | Filing Date |
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JP2006515072A Expired - Fee Related JP5142523B2 (ja) | 2003-06-04 | 2004-06-03 | 縦型構造複合半導体装置 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7384807B2 (ja) |
JP (1) | JP5142523B2 (ja) |
KR (2) | KR20060059891A (ja) |
CN (1) | CN100483612C (ja) |
TW (1) | TWI344706B (ja) |
WO (1) | WO2004109764A2 (ja) |
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-
2004
- 2004-06-03 KR KR1020057023266A patent/KR20060059891A/ko active Application Filing
- 2004-06-03 KR KR1020117008352A patent/KR20110042249A/ko not_active Application Discontinuation
- 2004-06-03 TW TW093116018A patent/TWI344706B/zh not_active IP Right Cessation
- 2004-06-03 US US10/861,743 patent/US7384807B2/en not_active Expired - Fee Related
- 2004-06-03 CN CNB2004800186202A patent/CN100483612C/zh not_active Expired - Fee Related
- 2004-06-03 WO PCT/US2004/017297 patent/WO2004109764A2/en active Application Filing
- 2004-06-03 JP JP2006515072A patent/JP5142523B2/ja not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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US20060148115A1 (en) | 2006-07-06 |
WO2004109764A2 (en) | 2004-12-16 |
WO2004109764A3 (en) | 2007-02-01 |
US7384807B2 (en) | 2008-06-10 |
US20080254561A2 (en) | 2008-10-16 |
US20040245543A1 (en) | 2004-12-09 |
TW200509415A (en) | 2005-03-01 |
JP2007526618A (ja) | 2007-09-13 |
KR20060059891A (ko) | 2006-06-02 |
CN1998065A (zh) | 2007-07-11 |
US7977133B2 (en) | 2011-07-12 |
TWI344706B (en) | 2011-07-01 |
KR20110042249A (ko) | 2011-04-25 |
CN100483612C (zh) | 2009-04-29 |
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