TWI344706B - Method of fabricating vertical structure compound semiconductor devices - Google Patents
Method of fabricating vertical structure compound semiconductor devices Download PDFInfo
- Publication number
- TWI344706B TWI344706B TW093116018A TW93116018A TWI344706B TW I344706 B TWI344706 B TW I344706B TW 093116018 A TW093116018 A TW 093116018A TW 93116018 A TW93116018 A TW 93116018A TW I344706 B TWI344706 B TW I344706B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- crystalline substrate
- gan
- buffer layer
- fabricating
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 239000004065 semiconductor Substances 0.000 title description 8
- 150000001875 compounds Chemical class 0.000 title description 7
- 239000010410 layer Substances 0.000 claims description 207
- 238000000034 method Methods 0.000 claims description 104
- 239000000758 substrate Substances 0.000 claims description 95
- 229910052751 metal Inorganic materials 0.000 claims description 63
- 239000002184 metal Substances 0.000 claims description 63
- 239000010980 sapphire Substances 0.000 claims description 63
- 229910052594 sapphire Inorganic materials 0.000 claims description 63
- 238000007747 plating Methods 0.000 claims description 34
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- 229910000881 Cu alloy Inorganic materials 0.000 claims description 31
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- 229910002704 AlGaN Inorganic materials 0.000 claims description 13
- 238000009713 electroplating Methods 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 10
- 238000007772 electroless plating Methods 0.000 claims description 10
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 10
- 238000004528 spin coating Methods 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
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- 230000005693 optoelectronics Effects 0.000 claims 28
- 238000009616 inductively coupled plasma Methods 0.000 claims 6
- LQIAZOCLNBBZQK-UHFFFAOYSA-N 1-(1,2-Diphosphanylethyl)pyrrolidin-2-one Chemical compound PCC(P)N1CCCC1=O LQIAZOCLNBBZQK-UHFFFAOYSA-N 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 2
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- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims 1
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- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 50
- 239000010931 gold Substances 0.000 description 14
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001868 water Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/956—Making multiple wavelength emissive device
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
Description
1344706 玖、發明說明 【發明所屬之技術領域】 本發明關於製造具有上下接觸點構造之垂直構造化合 物之半導體裝置。 【先前技術】 習知上使用絕緣藍寶石基底製造含發光二極體 (LED)雷射二極體 （LD)異質接面雙極電晶體 （HBT) 高電子漂移率電晶體 （HEMT)之大半以Ga-N爲基準之半 導體裝置。結果因必須形成一頂部η -接觸點和頂部p -接觸 點完成一電氣連結故以絕緣基底所建構之裝置構造一向被 建構成側邊構造。 這種結構使多數裝置表現出如對於靜電放電 （ESD) 爲電流阻塞且阻抗微弱之問題。當使用高功率白色LED或 藍色/UV LD供發光應用需要高電流注入時電流阻塞可變 成關鍵性。因電子被限制在接近這種裝置中之η型電極故 相對於所增加之電流注入光電裝置中光子之產生有限。另 言之損及功率之效率。這是市場上現有側邊裝置之一關鍵 性缺點。 E S D問題被視爲一嚴重問題尤其是當在例如汽車應用 之一高電壓環境中使用以Ga-N爲基準之LED時。一旦在裝 置表面上發生靜電充電時側邊裝置即受到充電之建立。因 由於絕緣基底裝置中無電流放電路徑該充電之建立在非常 短之期間內常造成裝置故障。 -5- 1344706 具有一像藍寶石之絕緣基底之側邊裝置之其它關鍵缺 點爲散熱差。已知藍寶石爲一不良熱導體。因此當裝置受 到高電流注入模式時即顯著縮短裝置壽命。這兩樣爲進一步 發展以Ga-N爲基準之LED和LD以及藍色/UV LD之關鍵障礙 〇 從生產良率觀點側面構造裝置亦具多數缺點。因如第1 r圖中所示將p和η電極安置在相同平面中故結構爲側邊構造之 #裝置需大尺寸之裝置。因此由於側邊裝置所需之晶圓真正佔 地量使裝置之數量受限。 除此處所提出問題外藍寶石基底材料已知爲次於鑽石 之次硬材料。這造成晶圓硏磨及拋光之困難。而且這亦難以 使裝置從晶圓中加以分離。因此即使我們能預期高達至前製 程之高裝置良率。最終之裝置製造良率主要是依含重疊拋光 及裸晶分離之後製程而定。 最近已有如第2圖中之說明有關一種垂直構造之以GaN ®爲基準之化合物半導體之新發展。已導入一種雷射抹平程 ▲ 序從GaN-epi層移除藍寶石基底。某些技術已經以導電或 半導電之第二基底取代絕緣藍寶石基底使用波長對藍寶 石爲透明一向在UV範圍中之準分子雷射加以製造垂直構 造之裝置。汴意藉雷射離移除藍寶石基底後大半其它技 術利用晶圓黏合技術供永久黏合至第二基底。 然而這些技術尙未造成大量生產VLED (垂直LED) 之實行晶圓定比雷射剝離程序。兩個主要理由爲由於支 撑晶圓和磊晶層間黏合黏著層之光積層而難於大面積之 -6- 1344706 w w剝離°另一問題爲因在雷射剝離後磊晶層表面在整 個晶圓表面上不平整而難於磊晶層與一永久第二基底間 之晶圓黏合。由於這些理由雷射剝離後之最後良率大礙 結果對於根據其它技術之垂直構造裝置已製成僅有晶圓 之小碎片部分》 已有其它努力加以克服晶圓黏合問題製造VLED。不 使用晶圓黏合方法第3圖中所示之另一技術附接一金屬支 、 ί掌。然而由於黏合層對支撑構造之光積層已知雷射離良 φ 率非常低。如黏合不夠牢固而經得起高能量雷射振波則 在雷射剝離後GaN上層會彎曲或破碎。一旦 GaN上層上 存在破碎或彎曲則非常難以實施如洗淨去黏合及裝置分離 之後雷射剝離。因此即使另一製程良率可維持非常高最終裝 置製程良率變成非常低。這些問題主要歸因於所使用之暫時 晶圓黏合技術及非最完善之雷射處理技術。 根據第3圖中所示另一技術之習知垂直構造之另一問題 爲裝置效能差。因在藍寶石基底上常使用砂石爆破產生均勻 · 之雷射光束能量分佈雷射剝離後之GaN表面非常粗糙其造成 裝置之反射率差。此外η-GaN層上所形成之金屬反射層支如 非金屬反射體材料諸如ITO般高。 ’ 所需要的是一種製造垂直構造化合物半導體裝置之方 法該方法提供一可靠且可重複之雷射剝離程序而取得高裝置 效能俾能應用雷射剝離程序在垂直構造裝置之製造上。 【發明內容】 1344706 本發明提供增進式技術供製造一種新垂直構造之化合 物半導體裝置其使用一種增進式雷射剝離程序供大量生產 以GaN爲基準之化合物半導體裝置。本發明之一觀點使用一 雙黏合程序供暫時黏合至支撑晶圓且除具某上厚度晶圓之 G a N初始緩衝層外利用一A1G a N緩衝層加以確保可靠及可反 覆之雷射剝離程序。 ^ 在一實施例中本發明說明製造方法利用使一雷射剝離 •程序和金屬化程序達最完善加以建構一垂直構造化合物半 導體供大量生產。首先爲防止在雷射剝離期間防止以聚 合物爲準之黏合黏著劑之熱傷害除習知GaN或A 1N緩衝層 外使用作爲擴散障壁用之AlGaN緩衝層和厚gAn層 （>5 μιη)。第二使用雙黏合技術降低由高能量雷射振波所致 之傷害並有助去黏合程序容易。第三在GaN上層和厚金屬 支撑層間配置一銦錫氧化物 （ITO)薄膜得到垂直裝置之 高效率充及電氣特性。最後使用成階之銅合金爲準之厚 ® 金屬支撑層取得垂直裝置之良好機械支撑高電氣導電率 _ 及良好散熱。 本發明之優點包含製造適於大量生產具高可靠性及高 良率之垂直構造之LED。本發明在雷射剝離序前使用—種 雙黏合程序俾能在雷射剝離後容易分離磊晶層和支撑晶 圓並使用一 AlGaN阻尼層加以保護抗抵雷射光束之高能量 振波。這額外緩衝層降低由高能量雷射光束照射在薄幕 晶薄膜上所造成之破碎。 1344706 【實施方式】 本發明是參考特定方法技術裝置構造及實施例加以說 明=那些熟於本技術者將體認到本說明是供圖解並提供實施 本發明之最佳模式。而且提供參數厚度溫度等加以說明實施 本發明之最佳模式且無意加以侷限》 第4圖至1 2圖說明根據本發明使用一雷射剝離程序製造 垂直構造之以GaN爲基準之LED 100。本實施例使用雷射離步 驟移除原始基底並使用一種金屬沈積程序形成一供機械支撑 及電氣導電性用之金屬基底。本發明中所說明之製法不限於 LED但可延伸至會生長在絕緣基底上以GaN爲基準磊晶薄膜 之任何裝置構造。如雷射二極體（LD)異質接面雙極電晶 體 （HBT)高電子漂移率電晶體 （HEMT)。這些應用皆爲 典範實例因更預期的是本發明適用於基底或另外材料。 如第5圖中所不以一適當之嘉晶生長設備如金屬有機化 學氣相沈積 （MDCVD)分子束磊晶生長（MBE)或氣相磊 晶生長（LPE)等使以GaN爲基準之LED構造150A-150F生長 在藍寶石晶圓200上。與一單層GaN或A1N爲一共通緩衝層之 習知技術相反的是除G a N或A1N緩衝層1 1 6外本發明使用一 AlGaN緩衝層114。AlGaN層114有用於產生一熱障壁。在雷 射剝離程序期間在GaN磊晶層和黏著黏合層間介面處之溫度 上增至250 °C。因此由於熱建立以聚合物爲基準之黏著層 可能變質並在雷射剝離期間與GaN磊晶層產生反應。這在去
劑 著 黏 之 變 質劑 熱著 除黏 移合 以黏 難低 間降 期於 序助 有 程£ 合IGa 黏 A 發 本 置 裝 進 增 此 因 變 質 之 用率 使 良 之造 明製 -9- 1344706 。此外設定總磊晶層厚度爲某種厚度防止增加GaN/黏著介 面處之溫度。有利的是爲使介面溫度保持低於200 °C選定 epi層厚度大於5 μπι。爲完成這個使η-GaN層生長厚度大於4 μπι。其它厚度和溫度變動是可預期的。 在晶晶生長後製程包含在GaN晶晶層上所實施之金屬化 及鈍化層形成物加以形成金屬接觸點並提供保護層。尤其是 如第5圖中所示從GaN LED層至藍寶石基底形成溝槽160。以 鲁這一種方式設計溝槽在雷射剝離期間舒緩GaN ep_ 16和藍 寶石基底200間之壓縮應力因此使雷射剝離期間GaN上層之 破碎或彎曲減至最小。將溝槽之尺度設計成與例如爲7 x7 mm之雷射光點尺寸相同舒緩雷射剝離程序期間之振波。溝 槽有利地比約100 μηΐ寬度窄並延伸小於2 μιη在藍寶石基底內 。使角反應離子蝕刻法有利地形成溝槽最好是電感性地耦合 電漿反應離子蝕刻 （ICP RIE)與Ar及Cl2或BCh氣體之混合 物。製程完成後使藍寶石基底背部重疊並予拋光在雷射剝離 ®前取得-平順表面。 _ 回頭參考第5圖在以雷射剝離移除藍寶石基底後爲了持 有一非常薄之GaN上層薄膜將具一藍寶石基底200之所完全 處理以GaN爲基準之LED晶圓黏合至暫時支撑晶圓。在本發 明中使用兩層臨時黏合黏著劑膠220和環氧樹脂230。使用雙 黏合技術有兩個原因。第一原因要從一高能量雷射光束降低 起因於振波之傷害。如黏合薄弱則雷射剝離後之GaN磊晶層 生長由於來自雷射光束之振波常造成大量破碎及彎曲這顯著 降低雷射剝離程序之良率。第二原因是藉使用具溶劑可溶性 -10- 1344706 超級膠之第一黏合層及具高度黏合強度和較高抗振波劑之第 二層有助使去黏合程序較容易。因超級膠對振波之黏合強度 及抗性薄弱而將Su-8環氧樹脂塗敷在第一超膠黏合層上。雖 然Su-8比超級膠對振波具甚闻之黏合強度及較大抗性一旦 Su-8完全硬化後即難以移除。 利用具有多個旋錘之旋塗法加以塗敷超級膠層俾能將 超級膠層厚度保持在約30 μιη。在超級膠黏合後使用旋塗法 將厚度比大槪20微米厚之Su-85塗敷在超級膠層頂部上。以 一以燈透過藍寶石支撑晶圓2 1 0使S u - 8 5硬化。因U V燈使S u -85硬化故要使Su-85環氧樹脂硬化使用一 UV燈透明藍寶石支 撑是有用的。提供以下供暫時晶圓黏合用之詳細程序步驟淨 化最佳模式。 超級膠黏合程序（在GaN/藍寶石晶圓200上）； 1 .使GaN/藍寶石晶圓浸泡在丙酮中然後浸泡在異丙醇中 以N2加以吹乾。 2. 使GaN/藍寶石晶圓浸泡在DI (去離子化）H2〇中以⑷加 以吹乾。 3. 以超級膠塗敷在晶圓中心大槪爲1/3至1/2處。 4. 使旋塗機快速爬升至2000rpm (1-2秒）並立即爬降回 到零。 5 .檢核完整覆蓋區；如未完全覆蓋則以超級膠充塡在空 區域內並重覆步驟4。 6.—旦以超級膠完全覆蓋晶圓則爬升至2000rpm並保持 達30秒。 -11 - 1344706 7. 爬降至零並停止。 8. 內層硬化達2分鐘。 9. 重覆步驟3至9塗抹5次。 1 0.使超級膠硬化達所建議時間（整夜硬化）。
Su-85黏合程序（在藍寶石支撑晶圓21〇上）； 1. 使藍寶石支撑晶圓浸泡在丙酮中然後異丙醇中再D j H2〇中以N:加以吹乾。 2. 塗有超級膠之藍寶石支撑晶圓和GaN/藍寶石晶圓之去 水和烘乾。 2.1以熱盤將支撑晶圓在120 °C下加熱10分鐘。 2 · 2從熱盤上加以移除並冷卻達2分鐘。 3. 以注入器對藍寶石支撑晶圓（拋光面）或Ga/N藍寶 石晶圓（超級膠面）塗敷Su-85。 4 .將其它晶圓安置在S u- 8 5滴之頂部上並允許自然散 佈之環氧樹脂。 5. 以擠壓器施以輕壓；過多之Su-85擠壓在周界外其 稍後可以一刀片或晶圓邊修剪器輕易地加以移除。 6. 軟烘加以移除溶劑； 6-1對（在熱盤上之）1/4晶圓 6.1.170 °C -2.5 分鐘 6.1.2 90 °C - 5分鐘 6.1.3 70 °C -2分鐘 6.1.4冷卻在洗淨表面上 6.2對（熱盤上之）1/2至全晶圓 -12- 1344706 6.2.170 t： -2.5 分鐘 6.2.2 90 °C -10分鐘 6.2.3 70 °C -2分鐘 6.2.4冷卻在洗淨表面上 7. UV曝光 a 7.1使用同質U V源（如罩幕直線校準器之U V燈） 7.1.1強度：在未具藍寶石支撑晶圓之Su 85上 ' 7~7.5mW/cm2 鲁 7-1.2強度：在未拋光藍寶石支撑晶圓上5.OmW/cm2 7.2 15 μηι厚膜需大槪200 mJ/cm2用量（在這強度 下達4 0秒）。 7.3在膜較厚之情況爲120秒曝光（或20分之最大曝 光） 8. 硬烘加以增加Su 85和超級膠間之交叉鏈結： 8.1.1 70 °C-1 分鐘 8.1.290 。。-2 分鐘 鲁 8.1.3冷卻在洗淨表面上 參考第6圖雷射剝離使用248nm KrF之紫外 （UV)準 分子雷射。典範雷射之脈衝期間爲3 8 ns。選定這波長之 理由爲爲了將GaN在GaN/藍寶石介面分解成金屬Ga和氣 態氮 （N2)雷射應透過藍寶石加以傳輸並被吸收在GaN上 層中。選定雷射光束爲7 x7 mm2光束且光束功率密度在 600〜l,200mJ/cm2之間。亦發現的是所需之雷射光束能量 密度強烈依藍寶石基底表面之粗糙度而定。在雷射剝離 -13- 1344706 後爲得到一平順GaN表面使用比800mJ/cm2高之光束能量 。預期這些參數可隨良好結果而變。 根據先前經驗。發現藍寶石基底之表面粗糙度在雷 射剝離後取得平順GaN表面是一重大程序參數。如在雷射 剝離期間用一未拋光藍寶石表面則GaN表面非常粗糙由於 形成一最終裝置後粗糙表面之不良反射率故這造成LED ^ 裝置之不良光線輸出。然而如使用一拋光表面則可得到 # 一非常平順之G aN表面因此可得到較高之光線輸出。然而 因雷射光束在拋光藍寶石表面之區域中與較小雷射光束 能量之區域比較具較高雷射光束功率之照射區域經常造 成GaN表面之破碎。因此爲了同時得到高良率之雷射剝離 程序及高裝置效能重要的是選定藍寶石晶圓之最佳表面 粗糙度。根據習知技術普通使用砂石爆破在拋光藍寶石 表面上得到均勻之雷射光束分佈然後砂石爆破不可靠且 無法重複得到相同表面粗糙度。本發明中將對24 8 nm之 ® UV雷射爲透明之材料所製成之一擴散器安置在雷射光束 和藍寶石期底之間得到均勻雷射光束功率分佈在藍寶石 表面上因此增強雷射剝離程序良率。最好將擴散器盤之 rms (均方値）表面粗糙度設定小於30 μΓη及擴散盤所用之 蕻寶石。 雷射剝離後如第7圖中所示以HC1溶液（室溫下 HC1:H20=1：1)或沸HC1蒸氣在雷射剝離期間將由GaN之 分離所致之過多Ga滴洗淨達30秒。因Ga在室溫下熔解在 雷射剝離期間Ga形成液態並能以酸性溶液加以輕易洗淨 -14- 1344706 。以酸所洗淨之GaN表面更以乾式蝕刻法加以洗淨有利地 使用電感性耦合之反應離子蝕刻法 （ICP RIE)。爲完成 一自動平齊表面亦在剝離之n-GaN表面上實施ICP拋光。如 第8圖所示因以較高反射性表面可增加光線輸出故平齊表面 從稍後所沈積之反射性表面產生高反射率是重要的。 要增加光線擷取並增進垂直構造裝置之電氣特性取得 良好光反射率和電氣接觸點特性是重要的。爲符號這些要求 如第8圖中所示η-接觸點和反射體最好使用ITO (銦錫氧化 物）薄膜。即使ΙΤΟ爲一透明非金屬接觸點它可形成對Π-GaN之一良好η型接觸點這可與其它科技所用之 Ti/Al比較 。而且要形成垂直裝置之一反射體高反射率之ITO薄膜是 理想的。已知IT◦反射率大於90%而已知習知技術所用金屬 薄膜之最佳反射率最大爲60~70%。使用電子束氣化將透明 導電及反射之ITO薄膜沈積在洗淨之η-GaN表面上。選定ITO 薄膜厚度範圆爲75〜I50nm得到最佳反射率。 要製造一其薄硬GaN上層（小於10 μιη)具有厚軟金屬 膜支撑（〜100 μιη)之垂直構造裝置重要的是在兩層膜之間 形成一中介層120降低可建立在第9圖中所示GaN上層15。和 金屬層122- 1 26間介面處之壓縮應力。要提供中介層120之另 一理由爲金屬中介層比直接在非金屬ITO表面上實施電鍍之 電鍍特性佳。利用電子束氣化在ITO表面1 18上連續沈積大槪 1 μηι厚之金（Au)薄膜120而未從真空移除晶圓。使用原位 連續層沈積有用於防止污染這在ITO和金層之間製成一良好 薄膜黏著是重要的。爲增進ITO和Au間之黏著在ITO和Au層 -15- 1344706 之間沈積30-5 0 nm厚之Cr黏著層。 在第9圖中以電鍍或無電電鍍法加以沈積厚金屬支撑層 120-126。與習知沈積法比較因電鍍或無電電鍍法爲快速且 不昂貴之沈積技術而加以使用。這就成本效益而論之大量生 產垂直裝置是重要的。支撑層之主要功能爲支撑層120-126 不只提供薄GaN上層之良好剛性機械支撑且亦提供良好電氣 Γ導電性及散熱。爲符合這些要求在Au/Cr黏著層上沈積成階 鲁之Cu合金層。 在Cu合金層前沈積第一Au緩衝層120。以如真空氣化等 之技術可形成Au層120。爲了要增進既有層膜和Cu合金層間 之黏著而沈積Au層120。爲逐漸軟化由於厚金屬層所建立之 應力而電鍍起初以硫酸鹽爲底之軟銅層。設定起初之軟銅合 金層厚度達~1〇 μιη。設定電鍍率爲3-5 μηι/時形成一濃稠並 均勻之Cu電鍍層。爲了提供結構性剛硬加以電鑛其次之軟 Cu層122及硬Cu層124。硬Cu電鍍之電鍍率上達20 μιη /時。 ® 對於Cu合金電鍍含錫（Sn)與鐵（Fe)之金屬合金電鍍溶 液是與硫酸Cu溶液混合增進Cu支撑層之機械強度和電氣導 電性。Cu合金支撑層之總厚度爲70〜90 μιη (第9圖）。在Cu 合金電鍍結束時即電鍍0.5〜1 μιη厚之Au層保護Cu合金層免於 氧化。在供封裝垂直裝置之裸晶黏合程序及銲線程序期間要 完成個別裸晶和金屬爲底之環氧樹脂間之良好黏著Au保護 層126是重要的。 在厚金屬沈積後使用溶劑從GaN/金屬支撑晶圓移除藍 寶石支撑晶圓210且其結果表示在第10圖中。去黏合程序包 -16- 1344706 含使GaN/金屬晶圓浸泡在丙酮中達3~5小時使超級膠層從支 撑藍寶石晶圓溶解之步驟。爲使去黏合程序較易且較快以如 邊緣修剪器或刀片之機械方法修剪建立在藍寶石晶圓邊緣上 之過多金屬。亦可使用一種化學程序。藉移除這過多金屬溶 劑可更易滲入超級膠層並加速去黏合程序。以超音波洗淨中 之異丙醇使分離之GaN/金屬晶圓進而加以浸泡及洗淨。以 使用潤濕及軟燥劑之DI水進而洗淨GaN裝置表面。 第10圖之水是支撑在一薄膜410上且如第1 1圖中所示藉 描繪加以切割個別裝置這可使用一種化學或雷射程序加以實 施。第1 2圖表示根據本發明一實施例之最終垂直裝置構造。 相對於其它習知製造技術這結果是具有高良率之高品質雷射 二極體。 本發明之優點包含製造適於大量生產具高質可靠性及 高良率之垂直製造LED。爲了在雷射剝離後易於分離磊晶層 及支撑晶圓本發明在雷射剝離程序前使用一雙黏合程序並使 用一AlGaN阻尼層保護抗抵雷射光束之高能量振波。這額外 緩衝層降低由高能量雷射光束照射在薄磊晶薄膜上所致之破 碎。 如以下請求項目之界定已發表典範實施例及最佳模式 對所發表之實施例可作修飾及變動而保持在本發明之主題和 精神內。 【圖式簡單說明】 本發明是參考下圖加以說明其中： -17- 4706 第1圖表示習知側邊構造之以GaN爲基準之LED其中 在裝置之頂部上形成兩金屬接觸點； 在第2圖爲一根據另—習知技術一垂直構造之以GaN 爲基準之LED其中在移除原始藍寶石基底後使用金屬黏合 層將GaN薄膜黏合至如siGaAs等之第二基底； 第3圖爲一根據另一習知技術一垂直構造之以G aN爲 Γ 基準之LED其中在移除原始藍寶石基底後不用晶圓黏合將 ♦厚金屬層沈積在GaN薄膜上面； 第4圖爲一根據本發明一垂直構造之以GaN爲基準之 LED其中在移除原始藍寶石基底後將一 a丨GaN之第二緩衝 層新增至初始GaN/AIN緩衝層並將一中介Au層與一原銅 合金層沈積至ITO (銦錫氧化物）接觸層； 第5圖表示在雷射剝離前使用膠/環氧樹脂雙黏著層附 接至藍寶石支撑晶圓之一 GaN LED; 第6圖表示使用一擴散器板通過藍寶石基底之雷射； ® 第7圖表示在雷射剝離後一藍寶石基底之移除； . 第8表示Ga滴移除和表面洗淨及一透明ITO反射體/接 觸點之形成； 第9圖表示沈積在ITO接觸層上之一 Au中介層及一厚 銅合金金層支撑： 第10圖表示一黏著膠/環氧樹脂層之去黏合和藍寶石 支撑之移除； 第11圖表示藉化學或雷射描繪之裝置分離；以及 第1 2圖表示根據本發明一實施例之最終垂直裝置構造 -18- 1344706 主要元件對照表 100 發光二極體 1 50A-150F LED構造 200 藍寶石晶圓 1 14 緩衝層 1 16 緩衝層 1 60 溝槽 220 膠 230 環氧樹脂 2 10 藍寶石支撑晶圓 1 20 中介層 150 G aN上層 122-126 金屬層 118 IT ◦表面 120-126 支撑層 1 22 軟Cu層 1 24 硬C u層 4 10 薄膜 212 擴散器盤
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Claims (1)
- «44706 拾、申請專利範圍 1. 一種製造垂直構造光電裝置之方法，包含： 在晶質基底上製造多數垂直構造光電裝置； 使用雷射剝離程序移除晶質基底；以及 . 製造金屬支撐構造加以取代晶質基底，其中在晶質 基底上製造多數垂直構造光電裝置包括： r 沈積形成η接觸點之ITO(銦錫氧化物）層， ® 在11"0層上沈積Au緩衝層， 使用電鍍和無電電鍍的至少其中之一方法在Au緩 衝層上電鍍Cu層，其中垂直構造光電裝置爲以GaN爲基 準之垂直構造，晶質基底包括藍寶石且其中以GaN爲基 準之垂直構造除了 GaN緩衝層或A1N緩衝層外，包含一 含有AlGaN緩衝層之緩衝層，提供熱擴散障壁以保護以 聚合物爲底之黏著層，且 其中根據以下規則由GaN緩衝層至晶質基底形成溝 ®槽： . a)溝槽尺寸實質上類似於雷射光束點尺寸，以在雷 射剝離程序期間舒緩振波， b) 溝槽比約1 〇〇微米窄並延伸至晶質基底內不深於 約3微米，以及 c) 使用反應離子蝕刻法形成溝槽。 2·—種製造垂直構造光電裝置之方法，包含： 在晶質基底上製造多數垂直構造光電裝置； 使用雷射剝離程序移除晶質基底；以及 -20- 1344706 製造金屬支撐構造加以取代晶質基底，其中在晶質 基底上製造多數垂直構造光電裝置包括： 沈積形成η接觸點之ITO(銦錫氧化物）層， 在ΙΤΟ層上沈積Au緩衝層， 使用電鍍和無電電鍍的至少其中之一方法在Au緩 衝層上電鍍Cu層，其中垂直構造光電裝置爲以GaN爲基 準之垂直構造，晶質基底包括藍寶石且其中以GaN爲基 準之垂直構造除了 GaN緩衝層或A1N緩衝層外，包含一 含有AlGaN緩衝層之緩衝層，提供熱擴散障壁以保護以 聚合物爲底之黏著層，且 其中在雷射剝離程序之後的去黏合程序期間，爲了 舒緩振波並易於去積層，根據以下步驟，使用以聚合物爲 底之黏著劑，雙層塗敷黏著黏合層，以聚合物爲底之黏著 劑包括在GaN上層和支撐晶圓間之超級膠及可曝光聚合 物： a) 使用旋塗法塗敷超級膠層， b) 超級膠層厚度大槪爲30微米厚， c) 使用旋塗法亦塗敷厚度大於20微米之可曝光聚合 物， d) 以UV燈使可曝光聚合物硬化*以及 e) 使用UV燈透明藍寶石支撐使可曝光聚合物硬化 σ 3. —·種製造垂直構造光電裝置之方法，包含： 在晶質基底上製造多數垂直構造光電裝置； -21 - m'4706 使用雷射剝離程序移除晶質基底；以及 製造金屬支撐構造加以取代晶質基底，其中在晶質 基底上製造多數垂直構造光電裝置包括： 沈積形成η接觸點之1T0(銦錫氧化物）層， _ 在ΙΤΟ層上沈積AU緩衝層， 使用電鑛和無電電鍍的至少其中之一方法在Au緩 衝層上電鍍Cu層，其中垂直構造光電裝置爲以GaN爲基 #準之垂直構造，晶質基底包括藍寶石，且 在雷射光束和晶質基底之間，使用由對雷射光束爲 透明之材料製成之擴散器盤，以得到均勻雷射光束功率分 佈。 4. 一種製造垂直構造光電裝置之方法，包含： 在晶質基底上製造多數垂直構造光電裝置： 使用雷射剝離程序移除晶質基底；以及 製造金屬支撐構造加以取代晶質基底，其中在晶質 ®基底上製造多數垂直構造光電裝置包括： . 沈積形成η接觸點之ITO(銦錫氧化物）層， 在ΙΤΟ層上沈積Au緩衝層， 使用電鍍和無電電鍍的至少其中之一方法在Au緩 衝層上電鍍Cu層，其中垂直構造光電裝置爲以GaN爲基 準之垂直構造，晶質基底包括藍寶石，且 爲逐漸軟化由於厚金屬層所建立之應力，沈積一軟 Cu合金屬，其中設定起初軟Cu合金屬厚度上達〜10ym '且其中設定電鍍率上達3〜5// m /時。 -22- 1344706 5 .如申請專利範圍第4項之方法，更包含沈積一硬 Cu層之步驟以提供構造剛性，其中硬Cu電鍍之電鍍率上 達20 # m/時，其中對於Cu合金電鍍，混合含錫（Sn)和鐵 (Fe)之金屬合金電鍍溶液與Cu硫酸鹽溶液，以增進Cu合 金支撐層之機械強度及電氣導電性，其中Cu合金支撐層 之總厚度爲70〜90 "m，且其中在Cu合金電鍍結束時，電 鍍〇.5〜Ι/zm厚之Au緩衝層，以保護Cu合金層免於氧化 〇 6.—種製造垂直構造光電裝置之方法，包含： 在晶質基底上製造多數垂直構造光電裝置： 使用雷射剝離程序移除晶質基底：以及 製造金屬支撐構造加以取代晶質基底，其屮垂直構 造光電裝置爲以GaN爲基準之垂直構造光電裝置，晶質 基底包括藍寶石且金屬支撐構造包括Cu，且其中以GaN 爲基準之垂直構造光電裝置，除了 GaN緩衝層或A1N緩 衝層外，包含一含有AlGaN緩衝層之緩衝層，提供熱擴 散障壁以保護以聚合物爲底之黏著層，且 其中根據以下規則由GaN緩衝層至晶質基底形成溝 槽： a) 溝槽尺寸實質上類似於雷射光束點尺寸，以在雷 射剝離程序期間舒緩振波， b) 溝槽比約1〇〇微米窄並延伸至晶質基底內不深於 約3微米，以及 c) 使用反應離子蝕刻法形成溝槽》 -23- Ί344706 7. —種製造垂直構造光電裝置之方法，包含： 在晶質基底上製造多數垂直構造光電裝置； 使用雷射剝離程序移除晶質基底：以及 製造金屬支撐構造加以取代晶質基底，其中垂直構 造光電裝置爲以GaN爲基準之垂直構造光電裝置，晶質 基底包括藍寶石且金屬支撐構造包括Cu，且其中以GaN 爲基準之垂直構造光電裝置，除了 GaN緩衝層或A IN緩 鲁衝層外，包含一含有AlGaN緩衝層之緩衝層，提供熱擴 散障壁以保護以聚合物爲底之黏著層，且 其中在雷射剝離程序之後的去黏合程序期間，爲了 舒緩振波並易於去積層，根據以下步驟，使用以聚合物爲 底之黏著劑，雙層塗敷黏著黏合層，以聚合物爲底之黏著 劑包括在GaN上層和支撐晶圓間之超級膠及可曝光聚合 物： a)使用旋塗法塗敷超級膠層， ® b)超級膠層厚度大槪爲30微米厚， c) 使用旋塗法亦塗敷厚度大於20微米之可曝光聚合 物， d) 以UV燈使可曝光聚合物硬化，以及 e) 使用UV燈透明藍寶石支撐使可曝光聚合物硬化 〇 8. —種製造垂直構造光電裝置之方法，包含： 在晶質基底上製造多數垂直構造光電裝置； 使用雷射剝離程序移除晶質基底；以及 -24- 1344706 製造金屬支撐構造加以取代晶質基底，其中垂直構 造光電裝置爲以GaN爲基準之垂直構造光電裝置，晶質 基底包括藍寶石且金屬支撐構造包括Cu，且其中以GaN 爲基準之垂直構造光電裝置’除了 GaN緩衝層或A1N緩 衝層外，包含一含有AlGaN緩衝層之緩衝層，提供熱擴 散障壁以保護以聚合物爲底之黏著層，且 在雷射光束和晶質基底之間，使用由對雷射光束爲 透明之材料製成之擴散器盤’以得到均勻雷射光束功率分 佈。 9. 一種製造垂直構造光電裝置之方法，包含： 在晶質基底上製造多數垂直構造光電裝置； 使用雷射剝離程序移除晶質基底；以及 製造金屬支撐構造加以取代晶質基底，其中垂直構 造光電裝置爲以GaN爲基準之垂直構造光電裝置，晶質 基底包括藍寶石且金屬支撐構造包括Cu，且其中以GaN 爲基準之垂直構造光電裝置，除了 GaN緩衝層或A1N緩 衝層外’包含一含有AlGaN緩衝層之緩衝層，提供熱擴 散障壁以保護以聚合物爲底之黏著層，且 爲逐漸軟化由於厚金屬層所建立之應力，沈積一軟 Cu合金屬，其中設定起初軟Cu合金屬厚度上達〜lOym ，且其中設定電鍍率上達3〜5ym /時。 10. —種製造垂直構造光電裝置之方法，包含： 在晶質基底上製造多數垂直構造光電裝置； 使用雷射剝離程序移除晶質基底；以及 -25- 1344706 製造金屬支撐構造加以取代晶質基底，其中垂直構 造光電裝置爲以GaN爲基準之垂直構造光電裝置，晶質 基底包括藍寶石且金屬支撐構造包括Cu，且其中以GaN 爲基準之垂直構造光電裝置，除了 GaN緩衝層或A1N緩 衝層外，包含一含有AlGaN緩衝層之緩衝層，提供熱擴 散障壁以保護以聚合物爲底之黏著層，且 沈積一硬C u層以提供構造剛性，其中硬c u電鍍之 鲁電鍍率上達20 # m/時，其中對於Cu合金電鍍，混合含錫 (Sn)和鐵（Fe)之金屬合金電鍍溶液與Cu硫酸鹽溶液，以 增進Cu合金支撐層之機械強度及電氣導電性，其中cU 合金支撐層之總厚度爲70〜90" m，且其中在Cu合金電鍍 結束時’電鍍0.5〜1 // m厚之A u緩衝層，以保護C u合金 層免於氧化。 11. 一種製造垂直構造光電裝置之方法，包含： 在晶質基底上製造多數垂直構造光電裝置； ® 使用雷射剝離程序移除晶質基底；以及 製造金屬支撐構造加以取代晶質基底，其中垂直構 造光電裝置爲以GaN爲基準之垂直構造光電裝置，晶質 基底包括藍寶石且金屬支撐構造包括Cu， 其中移除晶質基底包含在雷射光束和晶質基底之間 ’沈積一由對雷射光束爲透明之材料製成之擴散器盤，以 得到均勻雷射光束功率分佈。 1 2 .如申請專利範圍第1 1項之方法，其中製造金屬 支撐構造加以取代晶質基底，包括使用電鍍和無電電鍍的 -26- 1344706 至少其中之一方法電鍍金屬支撐構造之步驟。 1 3 .如申請專利範圍第丨1項之方法，更包含在多數 垂直構造光電裝置和金屬支撐構造之間製造一緩衝層。 1 4 .如申請專利範圍第1 1項之方法，其中製造金屬 支撐構造加以取代晶質基底，包括： 沈積形成η接觸點之ιτο(銦錫氧化物）層， 在ΙΤΟ層上沈積All緩衝層，以及 使用電鍍和無電電鍍的至少其中之一方法在Au緩 衝層上電鍍Cu層。 1 5 .如申請專利範圍第1丨項之方法，其中以GaN爲 基準之垂直構造光電裝置，除了 GaN緩衝層或A1N緩衝 層外’包含一含有AlGaN緩衝層之緩衝層，提供熱擴散 障壁以保護以聚合物爲底之黏著層。 1 6 ·如申請專利範圍第1 5項之方法，其中根據以下 規則由GaN緩衝層至晶質基底形成溝槽： a) 溝槽尺寸實質上類似於雷射光束點尺寸，以在雷 射剝離程序期間舒緩振波， b) 溝槽比約100微米窄並延伸至晶質基底內不深於 約3微米，以及 Ο使用反應離子蝕刻法，最好是電感性地耦合電漿 反應離子蝕刻法（ICP RIE)形成溝槽。 1 7 .如申請專利範圍第1 5項之方法，其中在雷射剝 離程序之後的去黏合程序期間，爲了舒緩振波並易於去積 層，根據以下步驟，使用以聚合物爲底之黏著劑，雙層塗 -27- 敷黏著黏合層，以聚合物爲底之黏著劑包括在GaN上層 和支撐晶圓間之超級膠及可曝光聚合物： a) 使用旋塗法塗敷超級膠層， b) 超級膠層厚度大槪爲30微米厚， c) 使用旋塗法亦塗敷厚度大於2〇微米之可曝光聚合 物， d) 以UV燈使可曝光聚合物硬化，以及 # e)使用UV燈透明藍寶石支撐使可曝光聚合物硬化 〇 1 8 .如申請專利範圍第1 1項之方法，更包含在剝離 的GaN晶圓上執行ICP RIE蝕刻及拋光之步驟，其中ICP RIE蝕刻及拋光曝露及產生純η-GaN的自動平坦表面，且 其中純η-GaN的自動平坦表面特別有利於從隨後欲被沈 積的反射構造產生高反射比。 1 9.如申請專利範圍第1 1項之方法，更包含在金屬 ® 支撐構造的底部上使用電子束蒸發沈積一透明導電反射層 之步驟，其中最好使用於η接觸點之ITO(銦錫氧化物）是 反射器。 20. 如申請專利範圍第11項之方法，更包含爲逐漸 軟化由於厚金屬層所建立之應力沈積一軟Cu合金屬層之 步驟，其中設定起初軟Cu合金屬層厚度上達〜l〇em，且 其中設定電鍍率上達3〜5 v m/時。 21. 如申請專利範圍第20項之方法，更包含沈積一 硬Cu層以提供構造剛性之步驟，其中硬Cu電鍍之電鍍 -28- 1344706 率上達2〇em /時’其中對於Cu合金電鍍，混合含錫（Sn) 和鐵（F e)之金屬合金電鍍溶液與C u硫酸鹽溶液，以增進 Cu合金支撐層之機械強度及電氣導電性，其中Cu合金支 撐層之總厚度爲70-90 /im，且其中在Cu合金電鍍結束時 ’電鍍0.5〜l"m厚之Au緩衝層，以保護Cu合金層免於 氧化。 2 2 ·如申請專利範圍第1 1項之方法，更包含藉由化 學或雷射刻劃切割各別裝置之步驟。 23. —種製造垂直構造光電裝置之方法，包含： 在晶質基底上製造多數垂直構造光電裝置： 使用雷射剝離程序移除晶質基底：以及 製造金屬支撐構造加以取代晶質基底，其中垂直構 造光電裝置爲以GaN爲基準之垂直構造光電裝置，晶質 基底包括藍寶石，且藉由沈積一軟Cu合金屬層以逐漸軟 化由於厚金屬層所建立之應力而形成金屬支撐構造，其中 設定起初軟Cu合金屬層厚度上達〜10//m，且其中設定電 鍵率上達3~5# m/時。 24. 如申請專利範圍第23項之方法，其中製造金屬 支撐構造加以取代晶質基底使用電鍍和無電電鍍的至少其 中之一方法。 2 5 .如申請專利範圍第2 3項之方法，更包含在多數 垂直構造光電裝置和金屬支撐構造之間製造一緩衝層。 2 6 .如申請專利範圍第2 3項之方法，其中製造金屬 支撐構造加以取代晶質基底包括： -29- 1^44706 沈積形成η接觸點之ITO(銦錫氧化物）層， 在IΤ Ο層上沈積A u緩衝層，以及 使用電鍍和無電電鍍的至少其中之一方法在Au緩 衝層上電鍵軟Cu合金層。 . 27.如申請專利範圍第23項之方法，其中以GaN爲 基準之垂直構造光電裝置，除了 GaN緩衝層或A1N緩衝 層外，包括一含有A1 GaN緩衝層之緩衝層，提供熱擴散 #障壁以保護以聚合物爲底之黏著層。 28.如申請專利範圍第27項之方法，其中根據以下 規則由GaN緩衝層至晶質基底形成溝槽： a) 溝槽尺寸實質上類似於雷射光束點尺寸，以在雷 射剝離程序期間舒緩振波， b) 溝槽比約1 00微米窄並延伸至晶質基底內不深於 約3微米，以及 c) 使用反應離子蝕刻法，最好是電感性地耦合電漿 ®反應離子蝕刻法（ICP RIE)形成溝槽。 • 29.如申請專利範圍第27項之方法，其中在雷射剝 離程序之後的去黏合程序期間，爲了舒緩振波並易於去積 層，根據以下步驟，使用以聚合物爲底之黏著劑，雙層塗 敷黏著黏合層，以聚合物爲底之黏著劑包括在GaN上層 和支撐晶圓間之超級膠及可曝光聚合物： a) 使用旋塗法塗敷超級膠層， b) 超級膠層厚度大槪爲30微米厚， c) 使用旋塗法亦塗敷厚度大於20微米之可曝光聚合 -30- 1344706 物， d) 以u v燈使可曝光聚合物硬化，以及 e) 使用UV燈透明藍寶石支撐使可曝光聚合物硬化 〇 30.如申請專利範圍第23項之方法，更包含在雷射 光束和晶質基底之間，使用由對雷射光束爲透明之材料製 成之擴散器盤，以得到均勻雷射光束功率分佈。 3 1 .如申請專利範圍第2 3項之方法，更包含在剝離 的GaN晶圓上執行電感性地耦合電漿反應離子蝕刻法 (ICP RIE)及拋光’其中ICP RIE蝕刻及拋光曝露及產生 純η-GaN的自動平坦表面，且其中純η-GaN的自動平坦 表面特別有利於從隨後欲被沈積的反射構造產生高反射比 〇 3 2.如申請專利範圍第23項之方法，更包含在金屬 支撐構造的底部上使用電子束蒸發沈積一透明導電反射層 ，其中最好使用於η接觸點之ITO(銦錫氧化物）是反射器 〇 33 .如申請專利範圍第23項之方法，更包含沈積一 硬Cu層以提供構造剛性，其中硬Cu電鍍之電鍍率上達 20 // m/時，其中對於Cu合金電鍍，混合含錫（Sn)和鐵 (Fe)之金屬合金電鍍溶液與Cu硫酸鹽溶液’以增進Cu合 金支撐層之機械強度及電氣導電性’其中Cu合金支撐層 之總厚度爲7〇~90 "m，且其中在Cu合金電鍍結束時，電 鍍0.5~l/zm厚之Au緩衝層，以保護Cu合金層免於氧化 -31 - 1344706 34.如申請專利範圍第23項之方法，更包含藉由化 學或雷射刻劃切割各別裝置。-32-
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2004
- 2004-06-03 CN CNB2004800186202A patent/CN100483612C/zh not_active Expired - Fee Related
- 2004-06-03 JP JP2006515072A patent/JP5142523B2/ja not_active Expired - Fee Related
- 2004-06-03 TW TW093116018A patent/TWI344706B/zh not_active IP Right Cessation
- 2004-06-03 KR KR1020057023266A patent/KR20060059891A/ko active Application Filing
- 2004-06-03 WO PCT/US2004/017297 patent/WO2004109764A2/en active Application Filing
- 2004-06-03 KR KR1020117008352A patent/KR20110042249A/ko not_active Application Discontinuation
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Also Published As
| Publication number | Publication date |
|---|---|
| CN100483612C (zh) | 2009-04-29 |
| US20060148115A1 (en) | 2006-07-06 |
| KR20060059891A (ko) | 2006-06-02 |
| US20040245543A1 (en) | 2004-12-09 |
| WO2004109764A2 (en) | 2004-12-16 |
| US7977133B2 (en) | 2011-07-12 |
| KR20110042249A (ko) | 2011-04-25 |
| JP2007526618A (ja) | 2007-09-13 |
| US20080254561A2 (en) | 2008-10-16 |
| JP5142523B2 (ja) | 2013-02-13 |
| US7384807B2 (en) | 2008-06-10 |
| CN1998065A (zh) | 2007-07-11 |
| WO2004109764A3 (en) | 2007-02-01 |
| TW200509415A (en) | 2005-03-01 |
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