TWI389347B - 光電元件及其製作方法 - Google Patents
光電元件及其製作方法 Download PDFInfo
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- TWI389347B TWI389347B TW097144439A TW97144439A TWI389347B TW I389347 B TWI389347 B TW I389347B TW 097144439 A TW097144439 A TW 097144439A TW 97144439 A TW97144439 A TW 97144439A TW I389347 B TWI389347 B TW I389347B
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- forming
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- epitaxial structure
- fabricating
- substrate
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- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 230000005693 optoelectronics Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 76
- 238000000034 method Methods 0.000 claims description 46
- 238000004070 electrodeposition Methods 0.000 claims description 20
- 230000000737 periodic effect Effects 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000007772 electroless plating Methods 0.000 claims description 14
- 238000009713 electroplating Methods 0.000 claims description 14
- 238000005323 electroforming Methods 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 94
- 239000000463 material Substances 0.000 description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 239000011733 molybdenum Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 238000005234 chemical deposition Methods 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 4
- 229910001182 Mo alloy Inorganic materials 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 239000000395 magnesium oxide Substances 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 4
- 239000011156 metal matrix composite Substances 0.000 description 4
- 229910052758 niobium Inorganic materials 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229910000846 In alloy Inorganic materials 0.000 description 3
- 229910001128 Sn alloy Inorganic materials 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- GPYPVKIFOKLUGD-UHFFFAOYSA-N gold indium Chemical compound [In].[Au] GPYPVKIFOKLUGD-UHFFFAOYSA-N 0.000 description 3
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
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- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- Led Devices (AREA)
- Photovoltaic Devices (AREA)
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Description
本發明揭露一具有應力平衡層之光電元件結構及其製造方法,特別是關於一種高導熱發光二極體結構及其製造方法。
習知承載藍光發光二極體的氧化鋁(sapphire)基板屬於低熱傳導性材料(熱傳導係數約為40W/mK),在較高電流狀況下操作時,無法有效地傳遞熱量,造成熱量累積而影響發光二極體之可靠度。
目前市面出現將整片高熱傳導性金屬銅基板(熱傳導係數約為400W/mK)以電鍍或黏貼方式與發光二極體連接,可有效地傳遞熱量。然而在移除成長基板後,內應力壓縮整片金屬銅基板,造成晶片(wafer)翹曲而影響後續製程良率。
本發明提供一種光電元件結構,其中之基板為高導熱基板,可由銅、鋁、鉬、矽、鍺、金屬基複合材料、銅合金、鋁合金或鉬合金組成。
本發明提供一種光電元件結構,其中之基板為高導熱基板,可由無電鍍、電鍍、或電鑄方式形成。
本發明提供一種光電元件結構,其中之應力平衡層可由單層材料或複數層材料所組成。
本發明提供一種光電元件結構,其中之應力平衡層可由鎳、鎢、鉬、鈷、鉑、金、或銅組成。
本發明提供一種光電元件結構,其中之應力平衡層可由無電鍍、電鍍、或電鑄方式形成。
本發明提供一種光電元件結構,其中之基板為高導熱基板,其熱膨脹係數與應力平衡層之熱膨脹係數相差不小於5ppm/℃。
本發明提供一種光電元件結構,其中應力平衡層之厚度不小於0.01倍且不大於0.6倍之高導熱基板厚度。
本發明提供一種光電元件結構,其中之應力平衡層具週期性圖案結構。
本發明提供一種光電元件結構,其中之具週期性圖案結構之應力平衡層每一圖案結構寬度不小於0.01倍光電元件之寬度,且不大於1倍光電元件之寬度。
本發明提供一種光電元件結構,其中之具週期性圖案結構之應力平衡層厚度不小於0.01倍且不大於1.5倍高導熱基板厚度。
本發明提供一種光電元件結構,其中之應力平衡層寬度大於高導熱基板之寬度。
本發明提供一種光電元件結構,其中之磊晶結構其材料包含一種或一種以上之物質,係選自鎵、鋁、銦、砷、磷及氮所構成之群組。
本發明揭露一種具有應力平衡層之光電元件結構及其製造方法。為了使本發明之敘述更加詳盡與完備,可參照下列描述並配合第1圖至第13圖之圖式。
實施例一
本發明之光電元件結構以發光二極體為例,其結構與製作方法如第1-5圖所示。
第1圖所示,包含一成長基板21,其材料可為砷化鎵、矽、碳化矽、藍寶石、磷化銦、磷化鎵、氮化鋁或氮化鎵等。接著,於成長基板21上形成磊晶結構22。磊晶結構22係藉由一磊晶製程所形成,例如有機金屬氣相沉積磊晶法(MOCVD)、液相磊晶法(LPE)或分子束磊晶法(MBE)等磊晶製程。此磊晶結構22至少包含一第一電性半導體層23,例如為一n型磷化鋁鎵銦(Alx
Ga1-x
)y
In1-y
P層或一n型氮化鋁鎵銦(Alx
Ga1-x
)y
In1-y
N層;一活性層24,例如為磷化鋁鎵銦(Alx
Ga1-x
)y
In1-y
P或氮化鋁鎵銦(Alx
Ga1-x
)y
In1-y
N所形成的多重量子井結構;以及一第二電性半導體層25,例如為一p型磷化鋁鎵銦(Alx
Ga1-x
)y
In1-y
P層或一p型氮化鋁鎵銦(Alx
Ga1-x
)y
In1-y
N層。另外,本實施例之活性層24可由例如同質結構、單異質結構、雙異質結構、或是多重量子井結構所堆疊而成。
接著,於磊晶結構22上形成一第二電性接觸層26及一反射層27。第二電性接觸層26的材料可為氧化銦錫(Indium Tin Oxide)、氧化銦(Indium Oxide)、氧化錫(Tin Oxide)、氧化鎘錫(Cadmium Tin Oxide)、氧化鋅(Zinc Oxide)、氧化鎂(Magnesium Oxide)或氮化鈦(Titanium Nitride)等。反射層27可為金屬材料,例如銀,鋁,鈦,鉻,鉑,金等。
接著,將具有反射層27的磊晶結構以成長基板21在上,反射層27在下的方式置入化學槽內進行電化學沉積法(electro chemical deposition),例如:電鍍,電鑄;或無電化學沉積法(electroless chemical deposition)製程,例如:無電鍍;以於反射層27之下形成一應力平衡層28,其材料可選自鎳、鎢、鉬、鈷、鉑、金、或銅。形成結構如第2圖所示。當應力平衡層反射率較高時,可作為反射層,則反射層27可省略。
如第3圖所示,再將具有應力平衡層28之結構置入另一化學槽內進行另一次電化學沉積法(electro chemical deposition),例如:電鍍,電鑄;或無電化學沉積法(electroless chemical deposition)製程,例如:無電鍍;以於應力平衡層28之下形成一高導熱基板29,以成為一晶圓(wafer)結構。其中高導熱基板材料可選自銅、鋁、鉬、矽、鍺、鎢、金屬基複合材料、銅合金、鋁合金、或鉬合金等。高導熱基板之材料選擇原則為其熱膨脹係數與磊晶結構22之熱膨脹係數相差不小於5ppm/℃。而應力平衡層厚度a最佳條件為不小於0.01倍且不大於0.6倍高導熱基板厚度b,即0.01b≦a≦0.6b。
接著如第4圖所示,藉由雷射剝離技術、蝕刻製程或化學機械研磨製程等方式部份或完全移除成長基板21後,裸露出磊晶結構22之第一電性半導體層23的表面。一般於移除成長基板後,高導熱基板與磊晶結構之間的內應力會壓縮整片高導熱基板,造成晶圓結構翹曲而影響後續製程良率。應力平衡層之形成可降低高導熱基板與磊晶結構之間的內應力,抑制晶圓結構翹曲現象。接下來,再於第一電性半導體層23裸露出的表面上形成第一電性接觸層30。第一電性接觸層30的材料可為氧化銦錫(Indium Tin Oxide)、氧化銦(Indium Oxide)、氧化錫(Tin Oxide)、氧化鎘錫(Cadmium Tin Oxide)、氧化鋅(Zinc Oxide)、氧化鎂(Magnesium Oxide)、氮化鈦(Titanium Nitride)、鍺金(Ge/Au)、鍺金鎳(Ge/Au/Ni)或鉻鋁(Cr/Al)所形成之薄膜,並可選擇性地於薄膜上以蝕刻製程形成特定圖案。接著,利用熱蒸鍍(Thermal Evaporation)、電子束蒸鍍(E-beam)或離子濺鍍(Sputtering)等方法,於第一電性接觸層30的特定圖案間形成一第一電極31。若第一電性接觸層30為連續薄膜層未形成特定圖案,第一電極31則可直接形成於第一電性接觸層30之上,其材料可為金錫合金或金銦合金。於此實施例中,高導熱基板29可作為第二電極。接著蝕刻複數道切割道32,再沿著切割道將發光二極體切割成具有高導熱基板的發光二極體晶粒100,如第5圖所示。
實施例二
本發明之另一實施例所形成之光電元件結構以發光二極體為例,結構與製作方法則如第1及6-9圖所示。其中磊晶結構與實施例一相同,如第1圖所示。如第6圖所示,將具有反射層27的磊晶結構以成長基板21在上,反射層27在下的方式置入化學槽內進行電化學沉積法(electro chemical deposition),例如:電鍍,電鑄;或無電化學沉積法(electroless chemical deposition)製程,例如:無電鍍;以於反射層之下形成一應力平衡層33,再利用黃光,蝕刻等製程使應力平衡層形成一具週期性圖案之結構。其材料可選自鎳、鎢、鉬、鈷、鉑、金或銅。當應力平衡層反射率較高時,可作為反射層,則反射層27可省略。
如第7圖所示,再將具週期性圖案結構之應力平衡層33之結構置入另一化學槽內進行另一次電化學沉積法(electro chemical deposition),例如:電鍍,電鑄;或無電化學沉積法(electroless chemical deposition)製程,例如:無電鍍;使得具週期性圖案結構之應力平衡層之間隔處及下方形成一高導熱基板29,以成為一晶圓(wafer)結構。其中高導熱基板材料可選自銅、鋁、鉬、矽、鍺、鎢、金屬基複合材料、銅合金、鋁合金、鉬合金等。其中具週期性圖案結構之應力平衡層之每一圖案結構寬度c不小於0.01倍之高導熱光電元件寬度d,且不大於1倍之高導熱光電元件之寬度,即0.01d≦c≦d。週期性圖案結構之應力平衡層厚度e最佳條件為不小於0.01倍且不大於1.5倍之高導熱基板層厚度b,即0.01b≦e≦1.5b。
接著,如第8圖所示,利用雷射剝離技術、蝕刻製程或化學機械研磨製程等方式部份或完全移除成長基板21。成長基板21移除後,裸露出磊晶結構22之第一電性半導體層23的表面,再於其上形成第一電性接觸層30。第一電性接觸層30的材料可為氧化銦錫(Indium Tin Oxide)、氧化銦(Indium Oxide)、氧化錫(Tin Oxide)、氧化鎘錫(Cadmium Tin Oxide)、氧化鋅(Zinc Oxide)、氧化鎂(Magnesium Oxide)、氮化鈦(Titanium Nitride)、鍺金(Ge/Au)、鍺金鎳(Ge/Au/Ni)或鉻鋁(Cr/Al)所形成之薄膜,並可選擇性地於薄膜上以蝕刻製程形成特定圖案。再分別於第一電性接觸層30上表面形成一第一電極31,於此實施例中,高導熱基板29可作為第二電極。其中第一電極之材料可為金錫合金或金銦合金。在此實施例中,亦可於第一電性接觸層30上表面及/或下表面形成一粗糙面。接著蝕刻複數道切割道32,再沿著切割道將發光二極體切割成具有高導熱基板的發光二極體晶粒200,如第9圖所示。
實施例三
本發明之再一實施例所形成之光電元件結構以發光二極體為例,結構與製作方法則如第1-2及10-12圖所示。其中磊晶結構與製作方法與實施例一相同,如第1-2圖所示。再如第10圖所示,於應力平衡層28下方形成複數道間隔距離為g的光阻34,再將此結構置入另一化學槽內進行另一次電化學沉積法(electro chemical deposition),例如:電鍍,電鑄;或無電化學沉積法(electroless chemical deposition)製程,例如:無電鍍,以於應力平衡層28之下複數道光阻間形成一高導熱基板29,最後成為一晶圓(wafer)結構。其中高導熱基板材料可選自銅、鋁、鉬、矽、鍺、鎢、金屬基複合材料、銅合金、鋁合金、或鉬合金等。接著如第11圖所示,藉由雷射剝離技術、蝕刻製程或化學機械研磨製程等方式部份或完全移除成長基板21後,裸露出磊晶結構22之第一電性半導體層23的表面,再於其上形成第一電性接觸層30。第一電性接觸層30的材料可為氧化銦錫(Indium Tin Oxide)、氧化銦(Indium Oxide)、氧化錫(Tin Oxide)、氧化鎘錫(Cadmium Tin Oxide)、氧化鋅(Zinc Oxide)、氧化鎂(Magnesium Oxide)、氮化鈦(Titanium Nitride)、鍺金(Ge/Au)、鍺金鎳(Ge/Au/Ni)或鉻鋁(Cr/Al)所形成之薄膜,並可選擇性地於薄膜上以蝕刻製程形成特定圖案。接著,利用熱蒸鍍(Thermal Evaporation)、電子束蒸鍍(E-beam)或離子濺鍍(Sputtering)等方法,於第一電性接觸層30的特定圖案間形成一第一電極31。若第一電性接觸層30為連續薄膜層未形成特定圖案,第一電極31則可直接形成於第一電性接觸層30之上,其材料可為金錫合金或金銦合金。於此實施例中,高導熱基板29可作為第二電極。接著蝕刻複數道切割道32,再沿著切割道將發光二極體切割成具有高導熱基板的發光二極體晶粒300,如第12圖所示。本實施例與其他實施例不同之處在高導熱基板層29之寬度g小於應力平衡層28寬度f,即g<f。高導熱基板寬度愈寬,其所受熱膨脹的內應力就愈大,但又須在允許寬度範圍內傳遞熱量,故設計使高導熱基板層之寬度g小於應力平衡層寬度f。
此外,上述之實施例一至三所揭示之發光二極體晶粒100-300更可以進一步地與其他元件組合連接以形成一發光裝置(light-emitting apparatus)。第13圖為習知之發光裝置結構示意圖,如第13圖所示,一發光裝置600包含一具有至少一電路602之次載體(sub-mount)60;至少一焊料62(solder)位於上述次載體60上,藉由此焊料62將上述發光二極體晶粒100黏結固定於次載體60上並使發光二極體晶粒100之基板29與次載體60上之電路602形成電連接;以及,一電性連接結構64,以電性連接發光二極體晶粒100之電極31與次載體60上之電路602;其中,上述之次載體60可以是導線架(lead frame)或大尺寸鑲嵌基底(mounting substrate),以方便發光裝置600之電路規劃並提高其散熱效果。
雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
21...成長基板
22...磊晶結構
23...第一電性半導體層
24...活性層
25...第二電性半導體層
26...第二電性接觸層
27...反射層
28...應力平衡層
29...高導熱基板
30...第一電性接觸層
31...第一電極
32...切割道
33...具週期性圖案結構之應力平衡層
34...光阻
60...次載體
62...焊料
64...電性連接結構
100、200、300...發光二極體晶粒
600...發光裝置
602...電路
a...應力平衡層厚度
b...高導熱基板厚度
c...具週期性圖案結構之應力平衡層之每一圖案結構寬度
d...光電元件寬度
e...具週期性圖案結構之應力平衡層厚度
f...應力平衡層寬度
g...高導熱基板寬度
第1-5圖係顯示本發明實施例之光電元件製作流程圖;
第6-9圖係顯示本發明另一實施例之光電元件製作流程圖;
第10-12圖係顯示本發明再一實施例之光電元件製作流程圖。
第13圖為習知發光裝置結構示意圖。
21...成長基板
22...磊晶結構
23...第一電性半導體層
24...活性層
25...第二電性半導體層
26...第二電性接觸層
27...反射層
28...應力平衡層
29...高導熱基板
30...第一電性接觸層
31...第一電極
32...切割道
100...發光二極體晶粒
a...應力平衡層厚度
b...高導熱基板厚度
Claims (17)
- 一光電元件製作方法,包含:提供一成長基板,其係具有一第一平面及一第二平面;形成一磊晶結構於該成長基板之第一平面上,其係至少具有一n型半導體層、一發光層及一p型半導體層;形成一金屬反射層於該磊晶結構之上;以電化學沉積法或無電化學沉積法形成一應力平衡層於該金屬反射層與該磊晶結構相對之一側;以電化學沉積法或無電化學沉積法形成一高導熱基板於該應力平衡層與該磊晶結構相對之一側,其中該應力平衡層可降低該高導熱基板與該磊晶結構之間的內應力,且該高導熱基板與該磊晶結構之熱膨脹係數相差不小於5ppm/℃;移除該成長基板,以暴露該磊晶結構之一表面;形成一電極於該磊晶結構暴露之該表面上,其中該電極與該磊晶結構形成電連結;蝕刻該磊晶結構,以形成複數道切割道;以及沿著該切割道切割以形成該光電元件。
- 如申請專利範圍第1項所述之光電元件製作方法,其中形成該應力平衡層之電化學沉積法可為電鍍或電鑄。
- 如申請專利範圍第1項所述之光電元件製作方法,其中形成該應力平衡層之無電化學沉積法可為無電鍍。
- 如申請專利範圍第1項所述之光電元件製作方法,其中形成該高導熱基板之電化學沉積法可為電鍍或電鑄。
- 如申請專利範圍第1項所述之光電元件製作方法,其中形成該高導熱基板之無電化學沉積法可為無電鍍。
- 如申請專利範圍第1項所述之光電元件製作方法,其中形成該複數道切割道之方法更包括黃光或顯影製程。
- 一光電元件製作方法,包含:提供一成長基板,其係具有一第一平面及一第二平面;形成一磊晶結構於該成長基板之第一平面上,其係至少具有一n型半導體層、一發光層及一p型半導體層;形成一金屬反射層於該磊晶結構之上;以電化學沉積法或無電化學沉積法形成一應力平衡層於該金屬反射層與該磊晶結構相對之一側;利用蝕刻製程使該應力平衡層形成一具週期性圖案之結構,其中該具週期性圖案結構之應力平衡層之每一圖案結構寬度不小於0.01倍該光電元件之寬度,且不大於1倍該光電元件之寬度;以電化學沉積法或無電化學沉積法形成一高導熱基板於該具週期性圖案結構之應力平衡層與該磊晶結構相對之一側,其中該具週期性圖案結構之應力平衡層可降低該高導熱基板與該磊晶結構之間的內應力; 移除該成長基板,以暴露該磊晶結構之一表面;形成一電極於該磊晶結構暴露之該表面上,其中該電極與該磊晶結構形成電連結;蝕刻該磊晶結構,以形成複數道切割道;以及沿著該切割道切割形成該光電元件。
- 如申請專利範圍第7項所述之光電元件製作方法,其中形成該具週期性圖案結構之應力平衡層之電化學沉積法可為電鍍或電鑄。
- 如申請專利範圍第7項所述之光電元件製作方法,其中形成該具週期性圖案結構之應力平衡層之無電化學沉積法可為無電鍍。
- 如申請專利範圍第7項所述之光電元件製作方法,其中形成該高導熱基板之電化學沉積法可為電鍍或電鑄。
- 如申請專利範圍第7項所述之光電元件製作方法,其中形成該高導熱基板之無電化學沉積法可為無電鍍。
- 如申請專利範圍第7項所述之光電元件製作方法,其中形成該複數道切割道之方法更包括黃光或顯影製程。
- 一光電元件製作方法,包含:提供一成長基板,其係具有一第一平面及一第二平面;形成一磊晶結構於該成長基板之第一平面上,其係至少具有一n型半導體層、一發光層及一p型半導體層;形成一金屬反射層於該磊晶結構之上; 以電化學沉積法或無電化學沉積法形成一應力平衡層於該金屬反射層與該磊晶結構相對之一側;形成複數道光阻於該應力平衡層之下方;以電化學沉積法或無電化學沉積法形成一高導熱基板於該應力平衡層之下方且無該光阻覆蓋之區域,使得該高導熱基板之寬度小於該應力平衡層之寬度,且該應力平衡層可降低該高導熱基板與該磊晶結構之間的內應力;移除於該應力平衡層之下方複數道光阻;移除該成長基板,以暴露該磊晶結構之一表面;形成一電極於該磊晶結構暴露之該表面上,其中該電極與該磊晶結構形成電連結;蝕刻該磊晶結構,以形成複數道切割道;以及沿著該切割道切割形成該光電元件。
- 如申請專利範圍第13項所述之光電元件製作方法,其中形成該應力平衡層之電化學性沉積法可為電鍍或電鑄。
- 如申請專利範圍第13項所述之光電元件製作方法,其中形成該應力平衡層之無電化學性沉積法可為無電鍍。
- 如申請專利範圍第13項所述之光電元件製作方法,其中形成該高導熱基板之電化學性沉積法可為電鍍或電鑄。
- 如申請專利範圍第13項所述之光電元件製作方法,其中形成該高導熱基板之無電化學性沉積法可為無電鍍。
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TW097144439A TWI389347B (zh) | 2008-11-13 | 2008-11-13 | 光電元件及其製作方法 |
US12/617,413 US20100120184A1 (en) | 2008-11-13 | 2009-11-12 | Optoelectronic device structure |
US14/622,300 US20150155458A1 (en) | 2008-11-13 | 2015-02-13 | Optoelectronic device structure |
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US8884434B2 (en) * | 2010-09-27 | 2014-11-11 | Infineon Technologies Ag | Method and system for improving reliability of a semiconductor device |
US8860005B1 (en) * | 2013-08-08 | 2014-10-14 | International Business Machines Corporation | Thin light emitting diode and fabrication method |
US9865769B2 (en) | 2015-03-23 | 2018-01-09 | International Business Machines Corporation | Back contact LED through spalling |
DE102015119553A1 (de) * | 2015-11-12 | 2017-05-18 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip, optoelektronisches Bauelement mit einem strahlungsemittierenden Halbleiterchip und Verfahren zur Beschichtung eines strahlungsemittierenden Halbleiterchips |
DE102022200853A1 (de) | 2021-12-22 | 2023-06-22 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische halbleitervorrichtung und verfahren zur herstellung eines optoelektronischen halbleitervorrichtung |
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JP3717196B2 (ja) * | 1994-07-19 | 2005-11-16 | 豊田合成株式会社 | 発光素子 |
JPH10270802A (ja) * | 1997-03-25 | 1998-10-09 | Sharp Corp | 窒化物系iii−v族化合物半導体装置及びその製造方法 |
JP3698402B2 (ja) * | 1998-11-30 | 2005-09-21 | シャープ株式会社 | 発光ダイオード |
US20010042866A1 (en) * | 1999-02-05 | 2001-11-22 | Carrie Carter Coman | Inxalygazn optical emitters fabricated via substrate removal |
JP4060511B2 (ja) * | 2000-03-28 | 2008-03-12 | パイオニア株式会社 | 窒化物半導体素子の分離方法 |
US6468824B2 (en) * | 2001-03-22 | 2002-10-22 | Uni Light Technology Inc. | Method for forming a semiconductor device having a metallic substrate |
US20030189215A1 (en) * | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
KR20060059891A (ko) * | 2003-06-04 | 2006-06-02 | 유명철 | 수직 구조 화합물 반도체 디바이스의 제조 방법 |
EP1756875A4 (en) * | 2004-04-07 | 2010-12-29 | Tinggi Technologies Private Ltd | FABRICATION OF A RETROFLECTIVE LAYER ON SEMICONDUCTOR ELECTROLUMINESCENT DIODES |
CN101901858B (zh) * | 2004-04-28 | 2014-01-29 | 沃提科尔公司 | 垂直结构半导体器件 |
US8174037B2 (en) * | 2004-09-22 | 2012-05-08 | Cree, Inc. | High efficiency group III nitride LED with lenticular surface |
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TWI389334B (zh) * | 2004-11-15 | 2013-03-11 | Verticle Inc | 製造及分離半導體裝置之方法 |
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KR101346538B1 (ko) * | 2007-09-26 | 2013-12-31 | 니치아 카가쿠 고교 가부시키가이샤 | 발광소자 및 그것을 이용한 발광장치 |
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US20100120184A1 (en) | 2010-05-13 |
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