DE602006008256D1 - LED mit vertikaler Struktur und deren Herstellungsverfahren - Google Patents

LED mit vertikaler Struktur und deren Herstellungsverfahren

Info

Publication number
DE602006008256D1
DE602006008256D1 DE602006008256T DE602006008256T DE602006008256D1 DE 602006008256 D1 DE602006008256 D1 DE 602006008256D1 DE 602006008256 T DE602006008256 T DE 602006008256T DE 602006008256 T DE602006008256 T DE 602006008256T DE 602006008256 D1 DE602006008256 D1 DE 602006008256D1
Authority
DE
Germany
Prior art keywords
led
manufacturing process
vertical structure
vertical
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006008256T
Other languages
English (en)
Inventor
Jong Wook Kim
Jae Wan Choi
Hyun Kyong Cho
Jong Ho Na
Jun Ho Jang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
LG Innotek Co Ltd
Original Assignee
LG Electronics Inc
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020050123857A external-priority patent/KR100705225B1/ko
Priority claimed from KR20060063586A external-priority patent/KR100808197B1/ko
Application filed by LG Electronics Inc, LG Innotek Co Ltd filed Critical LG Electronics Inc
Publication of DE602006008256D1 publication Critical patent/DE602006008256D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
DE602006008256T 2005-12-15 2006-12-14 LED mit vertikaler Struktur und deren Herstellungsverfahren Active DE602006008256D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050123857A KR100705225B1 (ko) 2005-12-15 2005-12-15 수직형 발광소자의 제조방법
KR20060063586A KR100808197B1 (ko) 2006-07-06 2006-07-06 수직형 발광 소자 및 그 제조방법

Publications (1)

Publication Number Publication Date
DE602006008256D1 true DE602006008256D1 (de) 2009-09-17

Family

ID=37814322

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006008256T Active DE602006008256D1 (de) 2005-12-15 2006-12-14 LED mit vertikaler Struktur und deren Herstellungsverfahren

Country Status (6)

Country Link
US (2) US7812357B2 (de)
EP (1) EP1798781B1 (de)
JP (1) JP5270088B2 (de)
CN (2) CN102157644B (de)
DE (1) DE602006008256D1 (de)
PL (1) PL1798781T3 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4290745B2 (ja) * 2007-03-16 2009-07-08 豊田合成株式会社 Ｉｉｉ−ｖ族半導体素子の製造方法
EP2221854B1 (de) * 2007-11-27 2016-02-24 Sophia School Corporation Iii-nitridstruktur und verfahren zur herstellung einer iii-nitridstruktur
JP2010045262A (ja) * 2008-08-15 2010-02-25 Showa Denko Kk 半導体発光素子の製造方法
TW201017863A (en) * 2008-10-03 2010-05-01 Versitech Ltd Semiconductor color-tunable broadband light sources and full-color microdisplays
KR101072200B1 (ko) 2009-03-16 2011-10-10 엘지이노텍 주식회사 발광소자 및 그 제조방법
US8587017B2 (en) 2009-07-05 2013-11-19 Industrial Technology Research Institute Light emitting device and method of fabricating a light emitting device
US8962362B2 (en) 2009-11-05 2015-02-24 Wavesquare Inc. Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same
WO2011069242A1 (en) * 2009-12-09 2011-06-16 Cooledge Lighting Inc. Semiconductor dice transfer-enabling apparatus and method for manufacturing transfer-enabling apparatus
US20110151588A1 (en) * 2009-12-17 2011-06-23 Cooledge Lighting, Inc. Method and magnetic transfer stamp for transferring semiconductor dice using magnetic transfer printing techniques
US8334152B2 (en) 2009-12-18 2012-12-18 Cooledge Lighting, Inc. Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate
CN102456778B (zh) * 2010-10-26 2014-11-05 展晶科技(深圳)有限公司 发光二极管芯片制造方法
KR20140041527A (ko) 2011-05-12 2014-04-04 (주)웨이브스퀘어 Ⅲ족 질화물 반도체 수직형 구조 ｌｅｄ 칩 및 그 제조 방법
TW201405889A (zh) * 2012-07-31 2014-02-01 Epistar Corp 發光二極體元件
KR101878754B1 (ko) * 2012-09-13 2018-07-17 삼성전자주식회사 대면적 갈륨 나이트라이드 기판 제조방법
WO2014108777A1 (en) * 2013-01-08 2014-07-17 Koninklijke Philips N.V. Shaped led for enhanced light extraction efficiency
WO2014113503A1 (en) * 2013-01-16 2014-07-24 QMAT, Inc. Techniques for forming optoelectronic devices
CN105264674B (zh) * 2013-12-20 2019-01-18 华为技术有限公司 半导体器件和制备半导体器件的方法
JP6328497B2 (ja) * 2014-06-17 2018-05-23 ソニーセミコンダクタソリューションズ株式会社 半導体発光素子、パッケージ素子、および発光パネル装置
US10707377B2 (en) * 2018-04-19 2020-07-07 Lg Electronics Inc. Display device using semiconductor light emitting device and method for manufacturing the same
CN109802017B (zh) * 2019-01-18 2021-03-30 京东方科技集团股份有限公司 Led外延片及制作方法、led芯片
KR102338181B1 (ko) * 2020-05-26 2021-12-10 주식회사 에스엘바이오닉스 반도체 발광소자를 제조하는 방법

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0397911A1 (de) * 1989-05-19 1990-11-22 Siemens Aktiengesellschaft Optoelektronisches Halbleiterbauelement
US5376580A (en) 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
TW277111B (de) 1994-04-20 1996-06-01 Hitachi Seisakusyo Kk
JPH1093136A (ja) * 1996-09-11 1998-04-10 Sanken Electric Co Ltd 半導体発光素子
EP0942459B1 (de) * 1997-04-11 2012-03-21 Nichia Corporation Wachstumsmethode für einen nitrid-halbleiter
US6229160B1 (en) * 1997-06-03 2001-05-08 Lumileds Lighting, U.S., Llc Light extraction from a semiconductor light-emitting device via chip shaping
JPH11340576A (ja) * 1998-05-28 1999-12-10 Sumitomo Electric Ind Ltd 窒化ガリウム系半導体デバイス
JP3788037B2 (ja) * 1998-06-18 2006-06-21 住友電気工業株式会社 ＧａＮ単結晶基板
RU2142661C1 (ru) * 1998-12-29 1999-12-10 Швейкин Василий Иванович Инжекционный некогерентный излучатель
DE10051465A1 (de) * 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
CN1292494C (zh) * 2000-04-26 2006-12-27 奥斯兰姆奥普托半导体有限责任公司 发光半导体元件及其制造方法
DE10033496A1 (de) * 2000-07-10 2002-01-31 Osram Opto Semiconductors Gmbh Halbleiterchip für die Optoelektronik
JP3882539B2 (ja) * 2000-07-18 2007-02-21 ソニー株式会社 半導体発光素子およびその製造方法、並びに画像表示装置
JP3886341B2 (ja) * 2001-05-21 2007-02-28 日本電気株式会社 窒化ガリウム結晶基板の製造方法及び窒化ガリウム結晶基板
JP3765246B2 (ja) * 2001-06-06 2006-04-12 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法
JP4131101B2 (ja) 2001-11-28 2008-08-13 日亜化学工業株式会社 窒化物半導体素子の製造方法
JP3715627B2 (ja) * 2002-01-29 2005-11-09 株式会社東芝 半導体発光素子及びその製造方法
TW577178B (en) 2002-03-04 2004-02-21 United Epitaxy Co Ltd High efficient reflective metal layer of light emitting diode
DE10234977A1 (de) 2002-07-31 2004-02-12 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Dünnschicht-Halbleiterbauelement auf GaN-Basis
US6897683B2 (en) * 2002-11-14 2005-05-24 Fyre Storm, Inc. Driver including first and second buffers for driving an external coil or first and second transistors
US6762069B2 (en) 2002-11-19 2004-07-13 United Epitaxy Company, Ltd. Method for manufacturing light-emitting element on non-transparent substrate
TW565957B (en) 2002-12-13 2003-12-11 Ind Tech Res Inst Light-emitting diode and the manufacturing method thereof
CN100411209C (zh) * 2004-01-26 2008-08-13 奥斯兰姆奥普托半导体有限责任公司 具有电流扩展结构的薄膜led
JP4868709B2 (ja) * 2004-03-09 2012-02-01 三洋電機株式会社 発光素子
JP2005302980A (ja) * 2004-04-12 2005-10-27 Rohm Co Ltd 窒化物系半導体発光素子及びその製造方法
WO2005104780A2 (en) 2004-04-28 2005-11-10 Verticle, Inc Vertical structure semiconductor devices
JP2005340762A (ja) * 2004-04-28 2005-12-08 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子
DE102004021175B4 (de) 2004-04-30 2023-06-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchips für die Optoelektronik und Verfahren zu deren Herstellung
TWM277111U (en) * 2004-06-18 2005-10-01 Super Nova Optoelectronics Cor Vertical electrode structure for white-light LED
US7161188B2 (en) 2004-06-28 2007-01-09 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element
JP2006100500A (ja) * 2004-09-29 2006-04-13 Sanken Electric Co Ltd 半導体発光素子及びその製造方法
KR100667508B1 (ko) * 2004-11-08 2007-01-10 엘지전자 주식회사 발광 소자 및 그의 제조방법

Also Published As

Publication number Publication date
US20110059564A1 (en) 2011-03-10
US7812357B2 (en) 2010-10-12
EP1798781A3 (de) 2007-10-10
EP1798781A2 (de) 2007-06-20
US8202753B2 (en) 2012-06-19
US20070164298A1 (en) 2007-07-19
PL1798781T3 (pl) 2010-03-31
CN103151437A (zh) 2013-06-12
CN102157644B (zh) 2012-12-26
CN102157644A (zh) 2011-08-17
JP2007165908A (ja) 2007-06-28
EP1798781B1 (de) 2009-08-05
JP5270088B2 (ja) 2013-08-21

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