TW200731567A - Production method for nitride semiconductor light emitting device - Google Patents

Production method for nitride semiconductor light emitting device

Info

Publication number
TW200731567A
TW200731567A TW095134064A TW95134064A TW200731567A TW 200731567 A TW200731567 A TW 200731567A TW 095134064 A TW095134064 A TW 095134064A TW 95134064 A TW95134064 A TW 95134064A TW 200731567 A TW200731567 A TW 200731567A
Authority
TW
Taiwan
Prior art keywords
light emitting
nitride semiconductor
production method
emitting device
semiconductor light
Prior art date
Application number
TW095134064A
Other languages
Chinese (zh)
Other versions
TWI318014B (en
Inventor
Hiroshi Osawa
Takashi Hodota
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW200731567A publication Critical patent/TW200731567A/en
Application granted granted Critical
Publication of TWI318014B publication Critical patent/TWI318014B/en

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Abstract

The present invention provides a production method for a nitride semiconductor light emitting device, which warps less after removing the substrate, and which can emit light from the side thereof; specifically, the present invention provides a production method for a nitride semiconductor light emitting device comprising: forming stacked layers by stacking at least an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a substrate in this order; forming grooves which divide the stacked layers so as to correspond to nitride semiconductor light emitting devices to be produced; filling the grooves with a sacrifice layer; and forming a plate layer on the p-type semiconductor layer and the sacrifice layer by plating.
TW095134064A 2005-09-16 2006-09-14 Production method for nitride semiconductor light emitting device TWI318014B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005270565A JP2007081312A (en) 2005-09-16 2005-09-16 Method of manufacturing nitride-based semiconductor light-emitting element
US72159005P 2005-09-29 2005-09-29

Publications (2)

Publication Number Publication Date
TW200731567A true TW200731567A (en) 2007-08-16
TWI318014B TWI318014B (en) 2009-12-01

Family

ID=37941257

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095134064A TWI318014B (en) 2005-09-16 2006-09-14 Production method for nitride semiconductor light emitting device

Country Status (3)

Country Link
JP (1) JP2007081312A (en)
CN (1) CN100565949C (en)
TW (1) TWI318014B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI412165B (en) * 2010-01-07 2013-10-11 Seoul Opto Device Co Ltd Light emitting diode having electrode pads

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100872678B1 (en) * 2007-07-23 2008-12-10 엘지이노텍 주식회사 Manufacturing method of semiconductor light emitting device
KR100962900B1 (en) 2008-11-18 2010-06-10 엘지이노텍 주식회사 Semiconductor light emitting device and fabrication method thereof
JP5310371B2 (en) * 2009-08-10 2013-10-09 ソニー株式会社 Semiconductor light emitting device and manufacturing method thereof
KR101081193B1 (en) * 2009-10-15 2011-11-07 엘지이노텍 주식회사 Semiconductor light emitting device and fabrication method thereof
CN103199160B (en) * 2010-01-13 2015-12-09 晶元光电股份有限公司 The formation method of light-emitting diode
JP5845557B2 (en) 2010-03-30 2016-01-20 ソニー株式会社 Manufacturing method of semiconductor light emitting device
JP2011211097A (en) * 2010-03-30 2011-10-20 Sony Corp Method for manufacturing semiconductor device
JP5531794B2 (en) 2010-06-09 2014-06-25 日亜化学工業株式会社 Manufacturing method of semiconductor light emitting device
KR101125025B1 (en) * 2010-07-23 2012-03-27 엘지이노텍 주식회사 Light emitting device and method for manufacturing the same
JP2012248795A (en) * 2011-05-31 2012-12-13 Toshiba Corp Semiconductor light-emitting element and method of manufacturing the same
CN103681980B (en) * 2012-09-25 2016-12-21 上海蓝光科技有限公司 A kind of cutting method of the light emitting diode containing back silver-plated reflecting layer
KR101969308B1 (en) * 2012-10-26 2019-04-17 삼성전자주식회사 Semiconductor light emitting device and manufacturing method of the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3259811B2 (en) * 1995-06-15 2002-02-25 日亜化学工業株式会社 Method for manufacturing nitride semiconductor device and nitride semiconductor device
US20030189215A1 (en) * 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
JP3896044B2 (en) * 2002-07-11 2007-03-22 シャープ株式会社 Nitride-based semiconductor light-emitting device manufacturing method and product
KR100483049B1 (en) * 2003-06-03 2005-04-15 삼성전기주식회사 A METHOD OF PRODUCING VERTICAL GaN LIGHT EMITTING DIODES

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI412165B (en) * 2010-01-07 2013-10-11 Seoul Opto Device Co Ltd Light emitting diode having electrode pads

Also Published As

Publication number Publication date
CN101263611A (en) 2008-09-10
CN100565949C (en) 2009-12-02
TWI318014B (en) 2009-12-01
JP2007081312A (en) 2007-03-29

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