TW200731567A - Production method for nitride semiconductor light emitting device - Google Patents
Production method for nitride semiconductor light emitting deviceInfo
- Publication number
- TW200731567A TW200731567A TW095134064A TW95134064A TW200731567A TW 200731567 A TW200731567 A TW 200731567A TW 095134064 A TW095134064 A TW 095134064A TW 95134064 A TW95134064 A TW 95134064A TW 200731567 A TW200731567 A TW 200731567A
- Authority
- TW
- Taiwan
- Prior art keywords
- light emitting
- nitride semiconductor
- production method
- emitting device
- semiconductor light
- Prior art date
Links
Landscapes
- Led Devices (AREA)
Abstract
The present invention provides a production method for a nitride semiconductor light emitting device, which warps less after removing the substrate, and which can emit light from the side thereof; specifically, the present invention provides a production method for a nitride semiconductor light emitting device comprising: forming stacked layers by stacking at least an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a substrate in this order; forming grooves which divide the stacked layers so as to correspond to nitride semiconductor light emitting devices to be produced; filling the grooves with a sacrifice layer; and forming a plate layer on the p-type semiconductor layer and the sacrifice layer by plating.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005270565A JP2007081312A (en) | 2005-09-16 | 2005-09-16 | Method of manufacturing nitride-based semiconductor light-emitting element |
US72159005P | 2005-09-29 | 2005-09-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200731567A true TW200731567A (en) | 2007-08-16 |
TWI318014B TWI318014B (en) | 2009-12-01 |
Family
ID=37941257
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095134064A TWI318014B (en) | 2005-09-16 | 2006-09-14 | Production method for nitride semiconductor light emitting device |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2007081312A (en) |
CN (1) | CN100565949C (en) |
TW (1) | TWI318014B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI412165B (en) * | 2010-01-07 | 2013-10-11 | Seoul Opto Device Co Ltd | Light emitting diode having electrode pads |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100872678B1 (en) * | 2007-07-23 | 2008-12-10 | 엘지이노텍 주식회사 | Manufacturing method of semiconductor light emitting device |
KR100962900B1 (en) | 2008-11-18 | 2010-06-10 | 엘지이노텍 주식회사 | Semiconductor light emitting device and fabrication method thereof |
JP5310371B2 (en) * | 2009-08-10 | 2013-10-09 | ソニー株式会社 | Semiconductor light emitting device and manufacturing method thereof |
KR101081193B1 (en) * | 2009-10-15 | 2011-11-07 | 엘지이노텍 주식회사 | Semiconductor light emitting device and fabrication method thereof |
CN103199160B (en) * | 2010-01-13 | 2015-12-09 | 晶元光电股份有限公司 | The formation method of light-emitting diode |
JP5845557B2 (en) | 2010-03-30 | 2016-01-20 | ソニー株式会社 | Manufacturing method of semiconductor light emitting device |
JP2011211097A (en) * | 2010-03-30 | 2011-10-20 | Sony Corp | Method for manufacturing semiconductor device |
JP5531794B2 (en) | 2010-06-09 | 2014-06-25 | 日亜化学工業株式会社 | Manufacturing method of semiconductor light emitting device |
KR101125025B1 (en) * | 2010-07-23 | 2012-03-27 | 엘지이노텍 주식회사 | Light emitting device and method for manufacturing the same |
JP2012248795A (en) * | 2011-05-31 | 2012-12-13 | Toshiba Corp | Semiconductor light-emitting element and method of manufacturing the same |
CN103681980B (en) * | 2012-09-25 | 2016-12-21 | 上海蓝光科技有限公司 | A kind of cutting method of the light emitting diode containing back silver-plated reflecting layer |
KR101969308B1 (en) * | 2012-10-26 | 2019-04-17 | 삼성전자주식회사 | Semiconductor light emitting device and manufacturing method of the same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3259811B2 (en) * | 1995-06-15 | 2002-02-25 | 日亜化学工業株式会社 | Method for manufacturing nitride semiconductor device and nitride semiconductor device |
US20030189215A1 (en) * | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
JP3896044B2 (en) * | 2002-07-11 | 2007-03-22 | シャープ株式会社 | Nitride-based semiconductor light-emitting device manufacturing method and product |
KR100483049B1 (en) * | 2003-06-03 | 2005-04-15 | 삼성전기주식회사 | A METHOD OF PRODUCING VERTICAL GaN LIGHT EMITTING DIODES |
-
2005
- 2005-09-16 JP JP2005270565A patent/JP2007081312A/en active Pending
-
2006
- 2006-09-14 CN CNB2006800332231A patent/CN100565949C/en active Active
- 2006-09-14 TW TW095134064A patent/TWI318014B/en active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI412165B (en) * | 2010-01-07 | 2013-10-11 | Seoul Opto Device Co Ltd | Light emitting diode having electrode pads |
Also Published As
Publication number | Publication date |
---|---|
CN101263611A (en) | 2008-09-10 |
CN100565949C (en) | 2009-12-02 |
TWI318014B (en) | 2009-12-01 |
JP2007081312A (en) | 2007-03-29 |
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