CN103199160B - The formation method of light-emitting diode - Google Patents
The formation method of light-emitting diode Download PDFInfo
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- CN103199160B CN103199160B CN201310054892.9A CN201310054892A CN103199160B CN 103199160 B CN103199160 B CN 103199160B CN 201310054892 A CN201310054892 A CN 201310054892A CN 103199160 B CN103199160 B CN 103199160B
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- epitaxial loayer
- sacrifice layer
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Abstract
A formation method for light-emitting diode, comprises and provides growth substrate, and sequentially formation sacrifice layer and epitaxial loayer are in growth substrate; Formation one or several epitaxial loayer opening penetrate epitaxial loayer and expose sacrifice layer; Formed supporting layer on epitaxial loayer, supporting layer have one or several supporting layer opening penetrate supporting layer and be communicated with multiple epitaxial loayer opening; And selective etch sacrifice layer and make growth substrate depart from epitaxial loayer.
Description
To be the applying date be on January 13rd, 2010 to the application and denomination of invention is the divisional application of the Chinese patent application 201010002188.5 of " the formation method of light-emitting diode ".
Technical field
The present invention relates to the manufacture method of light-emitting diode, particularly relate to the method for the substrate utilizing sacrifice layer conversion light emitting diode.
Background technology
The epitaxial film of light-emitting diode is normally grown up on GaAs substrate.Due to GaAs substrate meeting extinction, in order to improve luminous efficiency, the another side of suitable substrate and epitaxial film after extension film growth, can be fitted by the known practice.Afterwards, then with etching mode GaAs substrate is dissolved.But, dissolve the practice that the GaAs substrate that can be utilized again is quite waste, and after dissolving the As that remains be easy to cause the pollution of environment.
Summary of the invention
The invention provides and growth substrate can be made to retain and reusable LED production method.
In embodiment, the invention provides a kind of formation method of light-emitting diode, comprise and provide growth substrate, sequentially formation sacrifice layer and epitaxial loayer are in growth substrate; Form multiple epitaxial loayer opening penetrate epitaxial loayer and expose sacrifice layer; Formed supporting layer on epitaxial loayer, supporting layer have one or several supporting layer opening penetrate supporting layer and be communicated with one or several epitaxial loayer opening; And selective etch sacrifice layer and make growth substrate depart from epitaxial loayer.
In another embodiment, the invention provides a kind of formation method of light-emitting diode, comprise and growth substrate is provided, have one or several base openings penetrate growth substrate; Form sacrifice layer in growth substrate; Formed epitaxial loayer on sacrifice layer, epitaxial loayer have one or several epitaxial loayer opening penetrate epitaxial loayer; Undertaking substrate is provided to connect with epitaxial loayer; And selective etch sacrifice layer and make growth substrate depart from epitaxial loayer.
In more another embodiment, the invention provides a kind of formation method of light-emitting diode, comprise and provide growth substrate, sequentially growth sacrifice layer and epitaxial loayer are in growth substrate; Provide support substrate, supporting substrate has front and the back side, and the back side forms one or several groove; The back side of supporting substrate is engaged in epitaxial loayer; Remove a part for supporting substrate from front to expose at least one groove, and formed one or several supporting substrate opening penetrate this supporting substrate; Take supporting substrate as mask, etching epitaxial loayer with formed one or several epitaxial loayer opening penetrate epitaxial loayer and expose sacrifice layer; And selective etch sacrifice layer and make growth substrate depart from epitaxial loayer.
In another embodiment again, the invention provides a kind of formation method of light-emitting diode, comprise and provide growth substrate, sequentially growth sacrifice layer and epitaxial loayer are in growth substrate; Provide support substrate and supporting substrate is engaged with temporary substrate; Formation one or several supporting substrate opening penetrate supporting substrate; Supporting substrate is engaged in epitaxial loayer; Remove temporary substrate; Take supporting substrate as mask, etching epitaxial loayer with formed one or several epitaxial loayer opening penetrate epitaxial loayer and expose sacrifice layer; And selective etch sacrifice layer and make growth substrate depart from epitaxial loayer.
In more another embodiment again, the invention provides a kind of formation method of light-emitting diode, comprise and provide growth substrate, sequentially growth sacrifice layer and epitaxial loayer are in growth substrate; Provide support substrate; Formation one or several supporting substrate opening penetrate supporting substrate; Supporting substrate is engaged in epitaxial loayer; Be mask with supporting substrate, etch this epitaxial loayer with formed one or several epitaxial loayer opening penetrate epitaxial loayer and expose sacrifice layer; And selective etch sacrifice layer and make growth substrate depart from epitaxial loayer.
The present invention still comprises other aspects and is disclosed in detail in following execution mode to solve other problems and to merge above-mentioned each side.
Accompanying drawing explanation
Figure 1A and 1A ' to Fig. 1 E and 1E ' shows profile and the vertical view of each step in light-emitting diode 190 manufacturing process according to the embodiment of the present invention.
Fig. 2 A and 2A ' to Fig. 2 D and 2D ' shows profile and the vertical view of each step in light-emitting diode 290 manufacturing process according to the embodiment of the present invention.
Fig. 3 A and 3A ' to Fig. 3 F and 3F ' shows profile and the vertical view of each step in foundation embodiment of the present invention light-emitting diode 390 manufacturing process.
Fig. 4 A and 4A ' to Fig. 4 E and 4E ' shows profile and the vertical view of each step in foundation embodiment of the present invention light-emitting diode 490 manufacturing process.
Fig. 5 A and 5A ' to Fig. 5 E and 5E ' shows profile and the vertical view of each step in foundation embodiment of the present invention light-emitting diode 590 manufacturing process.
Description of reference numerals
100,200,300,400,500 growth substrate
201 base openings
202 growth substrate parts
120,220,320,420,520 sacrifice layers
221 sacrifice layer openings
222 sacrifice layer parts
140,240,340,440,540 epitaxial loayers
190,290,390,490 light-emitting diodes
141,141a, 141b, 141c, 241,341,441,541 epitaxial loayer openings
142,142a, 142b, 142c, 242,342,442,542 epitaxial layer portion
150 supporting layers
151 supporting layer openings
152 supporting layer parts
160,260 accept substrate
350,450,550 supporting substrates
352,452,552 supporting substrate parts
350a, 450a front
350b, the 450b back side
351,451,551 grooves, supporting substrate opening
470 temporary substrates
Embodiment
To demonstrate the preferred embodiments of the present invention below with reference to accompanying drawing.In accompanying drawing, similar components adopts identical component symbol.Should note presenting the present invention for clear, each element in accompanying drawing not according to the scale of material object, and for avoiding fuzzy content of the present invention, below illustrating and also omitting known spare part, associated materials and correlation processing technique thereof.
Figure 1A and 1A ' to Fig. 1 E and 1E ' shows profile and the vertical view of each step in light-emitting diode 190 manufacturing process according to the embodiment of the present invention, wherein Figure 1A ' to Fig. 1 E ' is vertical view, and Figure 1A to Fig. 1 E is the profile of the line I-I ' of the E ' along Figure 1A ' to Fig. 1.
First, with reference to Figure 1A and 1A ', provide growth substrate 100, sequentially growth sacrifice layer 120 and epitaxial loayer 140 are in growth substrate 100.The component of growth substrate 100 can to comprise in nitrogen, aluminium, gallium, arsenic, zinc, silicon, oxygen at least one, such as: n-type GaAs.Epitaxial loayer 140 is sandwich construction, and its component can to comprise in nitrogen, aluminium, gallium, indium, arsenic, phosphorus, silicon, oxygen at least one, and element contained by each layer is not to be all necessity mutually, such as: it sequentially can comprise contact layer, n-type Al under n-type GaAs
xga
1-xcoating layer, Al under As
yga
1-yas active layer, p-type Al
zga
1-zcontact layer on the upper coating layer of As and p-type GaAs, x, y and z are respectively between 0 and 1.The thickness of epitaxial loayer 140 can between 1 to 100 μm, but this is not limited.In the present embodiment, sacrifice layer 120 and epitaxial loayer 140 are all formed with extensional mode.The component of sacrifice layer 120 can to comprise in aluminium, arsenic at least one, and such as: AlAs, this material can make etchant, relative to growth substrate 100, epitaxial loayer 140 and the follow-up supporting layer that will be formed, optionally by sacrifice layer 120 erosion person.Sacrifice layer 120 thickness preferably exists
with
between.In addition, the electrical of growth substrate 100 also can be p-type, and user is when combination in any being needed to arrange in pairs or groups according to it.
With reference to Figure 1B and 1B ', patterning epitaxial loayer 140 with formed one or several epitaxial loayer opening 141 penetrate epitaxial loayer 140 and expose beneath sacrifice layer 120.Form multiple epitaxial loayer opening 141 and can have multiple object, for example (,) can be used for carrying out each light-emitting diode chip for backlight unit location, maybe etchant can be allowed to contact the hole of sacrifice layer 120.The present invention, in the opening made by other embodiments or groove, is not limited to epitaxial loayer, also can based on object as above.Gold-tinted etching technique can be used to complete this step.The position of multiple epitaxial loayer opening 141 can arrange or be distributed in the surface of epitaxial loayer 140 randomly in array ground as shown in Figure 1B.The shape of epitaxial loayer opening 141 can be circle, rectangle, polygon or other suitable shapes, and its size is then determined according to implementation demand.In embodiment, after patterning, the epitaxial loayer 142 (i.e. remaining epitaxial loayer 140 after patterning) of epitaxial loayer opening 141 surrounding is still interconnected.For example, Figure 1B ' display is around the epitaxial layer portion 142a of opening 141a; Around the epitaxial layer portion 142b of opening 141b; Around the epitaxial layer portion 142c of opening 141c.As shown in the figure, epitaxial layer portion 142a, 142b and 142c is interconnected integratedly.In other words, after patterning, remaining epitaxial loayer 142 presents continuous structure, and namely it can not have discrete disjunct island part because of the formation of multiple epitaxial loayer opening 141.In addition, though should note illustrating the epitaxial loayer opening 141 penetrating epitaxial loayer 140 in embodiment, so also can partially or completely through sacrifice layer 120 in other embodiment epitaxial layers openings 141.In detail, in another embodiment, except forming epitaxial loayer opening 141, on sacrifice layer 120, also form sacrifice layer groove (not shown) with at least one epitaxial loayer opening 141 of correspondence; Again in an embodiment again, except forming epitaxial loayer opening 141, also being formed and running through sacrifice layer 120 and the sacrifice layer opening (not shown) of corresponding at least one epitaxial loayer opening 141.
With reference to figure 1C and 1C ', form supporting layer 150 on the epitaxial loayer 140 of the multiple epitaxial loayer opening 141 of tool.Supporting layer 150 has multiple supporting layer opening 151 and penetrates supporting layer 150 and be communicated with corresponding epitaxial loayer opening 141.In other words, supporting layer 150 is formed in the region beyond epitaxial loayer 140 upper surface epitaxial loayer opening 141.In embodiment, supporting layer 150 has the pattern identical with the epitaxial loayer 140 after patterning, therefore should understand that all supporting layers 152 around multiple supporting layer opening 151 are all interconnected from the above.But in another embodiment, supporting layer 150 has the pattern not identical with the epitaxial loayer 140 after patterning, in other words, in the arrangement mode of epitaxial loayer opening 141 and supporting layer opening 151, patterns of openings or quantity, at least one is not identical.Supporting layer 150 is mainly used to replace growth substrate 100 to support epitaxial loayer 140, and growth substrate 100 like this could remove in subsequent step.Do not have the epitaxial loayer 140 of supporting layer 150 will be difficult to operation because thickness is too thin.In this embodiment, supporting layer 150 can be photoresist, metal or plated metal, its thickness between 50 μm to 300 μm, so not as limit.
With reference to figure 1C and 1C ', after supporting layer 150 is formed, selective etch sacrifice layer 120 and make growth substrate 100 depart from epitaxial loayer 140.In detail, can use relative to growth substrate 100, epitaxial loayer 140 and supporting layer 150, selectivity corrodes the etchant of sacrifice layer 120, it is made to flow through epitaxial loayer opening 140 with supporting layer opening 150 and then remove sacrifice layer 120 gradually, and then make growth substrate 100 depart from epitaxial loayer 140, but sacrifice layer 120 is not to be removed completely as necessity, as long as its volume contacted with levels or area are cut down to being enough to make growth substrate 100 depart from epitaxial loayer 140.Citric acid is used to carry out selective wet etching for etchant in this embodiment.Right the present invention does not get rid of other suitable wet etching or dry ecthings.
Fig. 1 D and 1D ' for sacrifice layer 120 remove and growth substrate 100 depart from after structural representation.Should notice that, in this structure, epitaxial loayer 140 engages with supporting layer about 150; The epitaxial loayer 142 of epitaxial loayer opening 141 surrounding is interconnected; And the supporting layer 152 of supporting layer opening 151 surrounding is interconnected.Because this structure contains discrete disjunct island part completely or hardly, therefore, as long as the thickness of supporting layer 150 is enough, namely follow-up each processing step can be carried out by this operation epitaxial film.
Fig. 1 E and 1E ' shows selectivity (optional) step of this embodiment, namely provides and accepts substrate 160 and make it engage with the supporting layer 150 of Fig. 1 D and 1D '.This step can have multiple object, such as can strengthen the function of supporting layer 150.The material accepting substrate 160 can be glass, metal, semi-conducting material, plastic cement, pottery or other suitable materials, and its thickness can depend on the needs.
Fig. 2 A and 2A ' to Fig. 2 D and 2D ' shows profile and the vertical view of each step in light-emitting diode 290 manufacturing process according to the embodiment of the present invention, wherein Fig. 2 A ' to Fig. 2 D ' is vertical view, and Fig. 2 A to Fig. 2 D is the profile of the line I-I ' of the D ' along Fig. 2 A ' to Fig. 2.Compared to previous embodiment, the main feature of the present embodiment is that growth substrate has opening, and uses and accept substrate and without supporting layer.The element similar with previous embodiment title, its use material also can be similar; As for its thickness, unless stated otherwise otherwise also similar with previous embodiment, repeat no more in literary composition.
As shown in Fig. 2 A and 2A ', provide growth substrate 200, and make growth substrate 200 have one or several base openings 201 penetrate growth substrate 200, wherein the growth substrate 202 of base openings 201 surrounding is interconnected.In other words, as above-mentioned, base openings 201 forms rear residue growth substrate part 202 and presents overall structure, and it can not have discrete disjunct island part because of the formation of multiple base openings 201.Available mechanical processing, laser, dry ecthing, wet etching form multiple base openings 201.
Then, as shown in Fig. 2 B and 2B ', growth sacrifice layer 220 is in growth substrate 200, and wherein sacrifice layer 220 has multiple sacrifice layer opening 221 and penetrates sacrifice layer 220 and be communicated with base openings 201, and the sacrifice layer part 222 of sacrifice layer opening 221 surrounding is interconnected.Sacrifice layer 220 can extension be formed.
Then, same reference diagram 2B and 2B ', form epitaxial loayer 240 on sacrifice layer 220, its epitaxial layers 240 has multiple epitaxial loayer opening 241 and penetrates epitaxial loayer 240 and be communicated with sacrifice layer opening 221, and the epitaxial layer portion 242 of epitaxial loayer opening 241 surrounding is interconnected all one-body moldedly.Sacrifice layer 220 can extension be formed.Epitaxial loayer 240 can extension be formed equally.
Then, as shown in Fig. 2 C and 2C ', provide the epitaxial loayer 240 accepting the structure that substrate 260 is formed with Fig. 2 B and 2B ' to connect.The material accepting substrate 260 can be glass, metal, semi-conducting material, plastic cement, pottery or other suitable materials.This embodiment is for replacing growth substrate 200 to accept substrate 260.Then, with reference to figure 2C and 2C ', accept after substrate 260 connects with epitaxial loayer 240, selective etch sacrifice layer 220 and make growth substrate 200 depart from epitaxial loayer 240.In detail, can use relative to growth substrate 200, epitaxial loayer 240 and accept substrate 260, selectivity corrodes the etchant of sacrifice layer 220, it is made to contact sacrifice layer 220 via base openings 201 and sacrifice layer opening 221 and be removed, and then make growth substrate 200 depart from epitaxial loayer 240, but sacrifice layer 220 is not to be removed completely as necessity, as long as its volume contacted with levels or area are cut down to being enough to make growth substrate 200 depart from epitaxial loayer 240.Citric acid is used to carry out selective wet etching for etching solution in this embodiment.Right the present invention does not get rid of other suitable wet etching or dry ecthings.
Fig. 2 D and 2D ' for sacrifice layer 220 remove and growth substrate 200 depart from after structural representation.Should note in this structure, only having epitaxial loayer 240 to engage with undertaking substrate about 260.Therefore, as long as it is enough to understand the thickness accepting substrate 260, namely follow-up each processing step can be carried out by this operation epitaxial film.
Fig. 3 A and 3A ' to Fig. 3 F and 3F ' is the profile and the vertical view that show each step in light-emitting diode 390 manufacturing process according to third embodiment of the invention, wherein Fig. 3 A ' to Fig. 3 F ' is vertical view, and Fig. 3 A to Fig. 3 F is the profile of the line I-I ' of the F ' along Fig. 3 A ' to Fig. 3.Compared to the explanation of Fig. 1, the main feature of the present embodiment is to provide patterning supporting substrate, and using it as mask, patterning epitaxial loayer etches after making sacrifice layer expose again.The present embodiment and the similar element of previous embodiment title, it uses material also can be similar; As for its thickness, unless stated otherwise otherwise also similar with the first embodiment, repeat no more in literary composition.
As shown in Fig. 3 A and 3A ', provide growth substrate 300, sequentially growth sacrifice layer 320 and epitaxial loayer 340 are in growth substrate 300.On the other hand, with reference to figure 3B and 3B ', provide support substrate 350, there is front 350a and back side 350b.Supporting substrate 350 has the thickness enough operated, and its material can be Si, Al
2o
3, metal, semi-conducting material, plastic cement, at least one in pottery.Formed one or several groove 351 on the 350b of the back side, such as laser, dry ecthing or wet etching.Note, point at this moment, groove 351 does not penetrate supporting substrate 350.
With reference to figure 3C and 3C ', the back side 350b of supporting substrate 350 is engaged in epitaxial loayer 340, to make groove 351 facing epitaxy layer 340.Then, from the supporting substrate 350 (if the dotted line of Fig. 3 C is with upper part) that front 350a removes a part, expose to make groove 351.In other words, remove rearward recess 351 and exposed supporting substrate 350, therefore also can be described as opening 351.Removing method useful etch, grinding or other suitable methods.
The structure that the supporting substrate 350 that Fig. 3 D and 3D ' display removes a part exposes to make groove (opening) 351.In this structure, the supporting substrate part 352 of groove 351 surrounding is interconnected.Then, with supporting substrate 350 for mask, etching epitaxial loayer 340 exposes sacrifice layer 320 to form epitaxial loayer opening 341 and penetrate epitaxial loayer 340.The structure that Fig. 3 E and 3E ' is formed after showing etching epitaxial loayer 340, the epitaxial layer portion 342 of its epitaxial layers opening 341 surrounding is interconnected all one-body moldedly.
With reference to figure 3E and 3E ', selective etch sacrifice layer 320 and make growth substrate 300 depart from epitaxial loayer 340.In detail, can use relative to growth substrate 300, epitaxial loayer 340 and supporting substrate 350, selectivity corrodes the etchant of sacrifice layer 320, it is made to contact sacrifice layer 320 via supporting substrate groove (opening) 351 and epitaxial loayer opening 341 and be removed, and then make growth substrate 300 depart from epitaxial loayer 340, but, sacrifice layer 320 is not to be removed completely as necessity, as long as its volume contacted with levels or area are cut down to being enough to make growth substrate 300 depart from epitaxial loayer 340.Citric acid is used to carry out selective wet etching for etching solution in this embodiment.Right the present invention does not get rid of other suitable wet etching or dry ecthings.
Fig. 3 F and 3F ' for sacrifice layer 320 remove and growth substrate 300 depart from after structural representation.Should note in this structure, only having epitaxial loayer 340 to engage with supporting substrate about 350.This structure contains discrete disjunct island part completely or hardly.Therefore, as long as the thickness should understanding supporting substrate 350 is enough, namely follow-up each processing step can be carried out by this operation epitaxial film.
Fig. 4 A and 4A ' to Fig. 4 E and 4E ' shows profile and the vertical view of each step in foundation embodiment of the present invention light-emitting diode 490 manufacturing process, wherein Fig. 4 A ' to Fig. 4 E ' is vertical view, and Fig. 4 A to Fig. 4 E is the profile of the line I-I ' of the E ' along Fig. 4 A ' to Fig. 4.Compared to the explanation of Fig. 3, the main feature of the present embodiment is that supporting substrate to be first formed on temporary substrate patterning again; And patterning supporting substrate has the opening penetrating supporting substrate.The present embodiment and the similar element of previous embodiment title, it uses material also similar; As for its thickness, unless stated otherwise otherwise also similar with previous embodiment, repeat no more in literary composition.
As shown in Fig. 4 A and 4A ', provide growth substrate 400, sequentially epitaxial growth sacrifice layer 420 and epitaxial loayer 440 are in growth substrate 400.On the other hand, as shown in Fig. 4 B and 4B ', temporary substrate 470 is provided and selects supporting substrate 450 to make it engage with temporary substrate 470.The material of temporary substrate 470 to can be in glass, metal, semi-conducting material, plastic cement, pottery or other suitable materials at least one.Then, patterning supporting substrate 450 makes it have one or more supporting substrate opening 451 and penetrates supporting substrate 450, and wherein the supporting substrate part 452 of supporting substrate opening 451 surrounding is interconnected.Patterning supporting substrate 450 available laser, dry ecthing, wet etching or cutting.The face that supporting substrate 450 engages with temporary substrate 470 is called front 450a, and the face of relative front 450a is back side 450b.
Then, as shown in Fig. 4 C and 4C ', the back side 450b of supporting substrate 450 is engaged with epitaxial loayer 440.Then, temporary substrate 470 is removed, make supporting substrate opening 451 be exposed to front 450a.Then, with supporting substrate 450 for mask, etching epitaxial loayer 440 with formed one or several epitaxial loayer opening 441 penetrate epitaxial loayer 440 and expose sacrifice layer 420.Epitaxial loayer 440 after etching has the pattern identical or different with the supporting substrate 450 of patterning that is by selecting the etched region of mask to form the etched pattern on epitaxial loayer 440.Structure after etching epitaxial loayer 440 is as shown in Fig. 4 D and 4D '.
With reference to figure 4D and 4D ', selective etch sacrifice layer 420 and make growth substrate 400 depart from epitaxial loayer 440.In detail, can use relative to growth substrate 400, epitaxial loayer 440 and supporting substrate 450, selectivity corrodes the etchant of sacrifice layer 420, it is made to contact sacrifice layer 420 via multiple supporting substrate opening 451 and epitaxial loayer opening 441 and be removed, and then make growth substrate 400 depart from epitaxial loayer 440, but sacrifice layer 420 is not to be removed completely as necessity, as long as its volume contacted with levels or area are cut down to being enough to make growth substrate 400 depart from epitaxial loayer 440.Citric acid is used to carry out selective wet etching for etching solution in this embodiment.Right the present invention does not get rid of other suitable wet etching or dry ecthings.
Fig. 4 E and 4E ' for sacrifice layer 420 remove and growth substrate 400 depart from after structural representation.Should note in this structure, only having epitaxial loayer 440 to engage with supporting substrate about 450.This structure contains discrete disjunct island part completely or hardly.Therefore, as long as the thickness should understanding supporting substrate 450 is enough, namely follow-up each processing step can be carried out by this operation epitaxial film.
Fig. 5 A and 5A ' to Fig. 5 E and 5E ' shows profile and the vertical view of each step in foundation embodiment of the present invention light-emitting diode 590 manufacturing process, wherein Fig. 5 A ' to Fig. 5 E ' is vertical view, and Fig. 5 A to Fig. 5 E is the profile of the line I-I ' of the E ' along Fig. 5 A ' to Fig. 5.Compared to previous embodiment, the main feature of the present embodiment is not use temporary substrate.The present embodiment and the similar element of previous embodiment title, it uses material also similar; As for its thickness, unless stated otherwise otherwise also similar with previous embodiment, repeat no more in literary composition.
As shown in Fig. 5 A and 5A ', provide growth substrate 500, sequentially epitaxial growth sacrifice layer 520 and epitaxial loayer 540 are in growth substrate 500.On the other hand, as shown in Fig. 5 B and 5B ', provide support substrate 550.Supporting substrate 550 need have enough thickness so that operation.Then, patterning supporting substrate 550 make it have one or several supporting substrate opening 551 penetrate supporting substrate 550, wherein the supporting substrate part 552 of supporting substrate opening 551 surrounding is all interconnected.Patterning supporting substrate 550 available laser, dry ecthing or wet etching.
Then, as shown in Fig. 5 C and 5C ', supporting substrate 550 is engaged with epitaxial loayer 540.Then, with supporting substrate 550 for mask, etching epitaxial loayer 540 with formed one or several epitaxial loayer opening 541 penetrate epitaxial loayer 540 and expose sacrifice layer 520.Epitaxial loayer 540 after etching has the pattern identical or different with the supporting substrate 550 of patterning that is by selecting the etched region of mask to form the etched pattern on epitaxial loayer 540.Structure after etching epitaxial loayer 540 is as shown in Fig. 5 D and 5D '.
With reference to figure 5D and 5D ', selective etch sacrifice layer 520 and make growth substrate 500 depart from epitaxial loayer 540.In detail, can use relative to growth substrate 500, epitaxial loayer 540 and supporting substrate 550, selectivity corrodes the etchant of sacrifice layer 520, it is made to contact sacrifice layer 520 via multiple supporting substrate opening 551 and epitaxial loayer opening 541 and be removed, and then make growth substrate 500 depart from epitaxial loayer 540, but sacrifice layer 520 is not to be removed completely as necessity, as long as its volume contacted with levels or area are cut down to being enough to make growth substrate 500 depart from epitaxial loayer 540.Citric acid is used to carry out selective wet etching for etching solution in this embodiment.Right the present invention does not get rid of other suitable wet etching or dry ecthings.
Fig. 5 E and 5E ' for sacrifice layer 520 remove and growth substrate 500 depart from after structural representation.Should note in this structure, only having epitaxial loayer 540 to engage with supporting substrate about 550.This structure contains discrete disjunct island part completely or hardly.Therefore, as long as the thickness should understanding supporting substrate 550 is enough, namely follow-up each processing step can be carried out by this operation epitaxial film.
The foregoing is only the preferred embodiments of the present invention, and be not used to limit claim of the present invention; Under all other does not depart from disclosed spirit, the equivalent change that completes or modification, all should be included in claim.
Claims (9)
1. a formation method for light-emitting diode, comprises:
Growth substrate is provided, have one or several base openings penetrate this growth substrate;
Form sacrifice layer in this growth substrate, comprise make this sacrifice layer have one or several sacrifice layer opening penetrate this sacrifice layer and be communicated with this one or several base openings;
Form epitaxial loayer on this sacrifice layer;
Undertaking substrate is provided to connect with this epitaxial loayer; And
This sacrifice layer of selective etch and make this growth substrate depart from this epitaxial loayer.
2. the formation method of light-emitting diode as claimed in claim 1, wherein this one or the growth substrate of several base openings surrounding be interconnected.
3. the formation method of light-emitting diode as claimed in claim 1, wherein the sacrifice layer of this sacrifice layer opening surrounding is interconnected.
4. the formation method of light-emitting diode as claimed in claim 1, wherein this step of this sacrifice layer of selective etch comprise make etchant via this one or several base openings and this one or several this sacrifice layer of sacrifice layer openings contact.
5. the formation method of light-emitting diode as claimed in claim 4, wherein this growth substrate to comprise in nitrogen, aluminium, gallium, arsenic, zinc, silicon, oxygen at least one; This sacrifice layer to comprise in aluminium, arsenic at least one; This undertaking substrate to comprise in glass, metal, semi-conducting material, plastic cement, pottery at least one; And this etchant comprises citric acid.
6. the formation method of light-emitting diode as claimed in claim 1, more comprises and removes portion of epi layer.
7. the formation method of light-emitting diode as claimed in claim 6, wherein the part that is removed of this epitaxial loayer with this one or several sacrifice layer opening connect.
8. the formation method of light-emitting diode as claimed in claim 6, the step wherein removing portion of epi layer makes this sacrifice layer expose.
9. the formation method of light-emitting diode as claimed in claim 6, the step wherein removing portion of epi layer comprises the opening forming array arrangement or random distribution.
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| WO2007133044A1 (en) * | 2006-05-15 | 2007-11-22 | Epivalley Co., Ltd. | Manufacturing method of nitride semiconductor substrate and iii-nitride semiconductor light emitting device |
| CN101529605A (en) * | 2006-10-27 | 2009-09-09 | 佳能株式会社 | Semiconductor member, semiconductor article manufacturing method, and LED array using the manufacturing method |
| CN101494267A (en) * | 2008-11-24 | 2009-07-29 | 厦门市三安光电科技有限公司 | Preparation method for gallium nitride base light-emitting device based on substrate desquamation |
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| CN102130221B (en) | 2013-03-27 |
| CN103199160A (en) | 2013-07-10 |
| CN102130221A (en) | 2011-07-20 |
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