CN110249435A - Light-emitting component and its manufacturing method - Google Patents

Light-emitting component and its manufacturing method Download PDF

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Publication number
CN110249435A
CN110249435A CN201880009144.XA CN201880009144A CN110249435A CN 110249435 A CN110249435 A CN 110249435A CN 201880009144 A CN201880009144 A CN 201880009144A CN 110249435 A CN110249435 A CN 110249435A
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China
Prior art keywords
layer
epitaxial
light
substrate
removing unit
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石崎顺也
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

The present invention provides a kind of light-emitting component, the light-emitting component includes window layer and supporting substrate, and it is set to multiple illumination regions that on the window layer and supporting substrate and emission wavelength is different, wherein, multiple illumination region all has the second semiconductor layer according to the second conductive type, active layer, and the sequence of the first semiconductor layer of the first conductive type is formed by construction, and has and remove first semiconductor layer or second semiconductor layer, and the removing unit of the active layer, and the non-removing unit other than the removing unit, also there is the first Ohmic electrode for being set to the non-removing unit, and it is set to the second Ohmic electrode of the removing unit.A kind of multiple illumination regions that emission wavelength is different are provided as a result, and are formed in a light-emitting component, and are suitble to the light-emitting component of the light-emitting device array of thin space.

Description

Light-emitting component and its manufacturing method
Technical field
The present invention relates to a kind of light-emitting component and its manufacturing methods.
Background technique
In AR (augmented reality), HMD (head-mounted display), needing long side is that the microminiature of 1~2cm or so is shown Device, and it is also required to the high display of brightness.
When making the display for the full HD specification that long side is 1~2cm or so, due to needing 1920 × 1080pixel Pixel, therefore the size of 1pixel needs to realize with the spacing of 5.2 μm~10.4 μm of or so.
In such microminiature illuminator, the per unit area of 1 element needs high brightness, and compared with patent document 1 Display of organic electroluminescence as such LCD or patent document 2, the light-emitting component of emissive type are also even more ideal.
In addition, due to needing high craft precision, the material that selection can be suitably used for semiconductor technology is more appropriate.
Existing technical literature
Patent document
Patent document 1: Japanese Patent Publication 2013-210588 bulletin
Patent document 2: Japanese Patent Publication 2013-037021 bulletin
Summary of the invention
(1) technical problems to be solved
For the black and white display of Pixel Dimensions as described above, as disclosed in CEA-LETI (France), as long as making It can be realized with the wafer that can be applicable in semiconductor technology.
However, technology disclosed in CEA-LETI is monochrome, the technology of multicolor is not suggested that.This is because being sent out realizing Indigo plant~green light InGaN class epitaxial wafer and realization issue in Huang~red light AlGaInP class material out, form wafer Optimum temperature band (InGaN class be 800~1000 DEG C, AlGaInP class be 500~700 DEG C) and substrate (InGaN class be indigo plant treasured Ground mass plate, AlGaInP class are GaAs substrate) it is different, to form pole simultaneously on wafer with the methods of epitaxial growth For difficult event.
Although technically display can be made by cutting very small light-emitting component and transferring load to drive substrate, If be intended to realize in the display of 1920 × 1080 pixels such as dual color light emitting, even if with the production of 0.2 second/away from into Row transfer is also required to 240 days manufacturing times, this practice is simultaneously unrealistic.
In order to realize the light-emitting device array of thin space (small size) to high-density, way ideally is in wafer It is upper to realize the wafer with the function of different emission wavelengths, then by the element arrays of semiconductor technology production thin space, thus Display is made.
In view of the above subject, the purpose of the present invention is to provide a kind of multiple illumination regions that emission wavelength is different to be formed in The same light-emitting component, and it is suitble to the light-emitting component of the light-emitting device array of thin space and the manufacturing method of the light-emitting component.
(2) technical solution
In order to realize that the above subject, the present invention provide a kind of light-emitting component, comprising window layer and supporting substrate and it is set to In the window layer and supporting substrate and multiple illumination regions that emission wavelength is different, wherein multiple illumination region all has according to second The sequence of first semiconductor layer of the second semiconductor layer of conductivity type, active layer and the first conductive type is formed by construction, and has There is the removing unit for removing first semiconductor layer or second semiconductor layer and the active layer and non-other than the removing unit Removing unit also has and is set to the first Ohmic electrode of the non-removing unit and is set to the second Ohmic electrode of the removing unit.
If the different multiple illumination regions of such light-emitting component, as emission wavelength are formed in the same light-emitting component, And it is suitble to the light-emitting component of the light-emitting device array of thin space.
Furthermore it is preferred that an illumination region in multiple light-emitting component is by being formed directly into the window layer and supporting substrate On epitaxial layer constituted, other illumination regions are then engaged on the epitaxial layer.
If such light-emitting component, just the light of multi-wavelength can be made not interfere, it will while maintaining high brightness These light are radiated to outside.
Furthermore it is preferred that the epitaxial layer that is formed directly on the window layer and supporting substrate and be engaged in the epitaxial layer it On illumination region between have benzocyclobutene film or SiO2Film.
If such light-emitting component, then the epitaxial layer being formed directly on window layer and supporting substrate and epitaxial layer is engaged in On illumination region between be bonded on it is more strong in mechanicalness.
In addition, multiple illumination region can for comprising the illumination region being made of the InGaN class material of bluish-green colour system and The illumination region being made of the AlGaInP class material of reddish yellow colour system.
In this way, if light-emitting component of the invention, such as just can become and have the hair such as bluish-green colour system and reddish yellow colour system The light-emitting component of the different multiple illumination regions of optical wavelength.
In addition, the present invention provides a kind of manufacturing method of light-emitting component comprising the steps of: prepare the first epitaxial substrate and Second epitaxial substrate, wherein first epitaxial substrate is grown with the epitaxial layer for issuing the light of first wave length on the first substrate, should Second epitaxial substrate is grown with the epitaxial layer for issuing the light of second wave length in the second substrate；It is bonded the outer of first epitaxial substrate Prolong the epitaxial layer of layer Yu second epitaxial substrate；And the first substrate or second base are removed from the epitaxial substrate by fitting Plate.
If such manufacturing method, due to being given again after being respectively formed the illumination region of two or more emission wavelengths Engagement, therefore each illumination region that can grow up under the conditions of most suitable crystalline growth, and be able to obtain to each emission wavelength Have efficient luminescent layer (light-emitting component region).Therefore, it just can produce easily and have the different multiple hairs of emission wavelength Light portion, and interfere the light of multi-wavelength not, external hair can be radiated to while maintaining high brightness and by these light Optical element.
Furthermore it is possible to InGaN class material be used as to the epitaxial layer of the light of the sending first wave length, by AlGaInP class material It is used as the epitaxial layer of the light of the sending second wave length.
In this way, just can be manufactured easily as having bluish-green colour system and reddish yellow colour system if the manufacturing method of the present invention The light-emitting component of multiple illumination regions of emission wavelength.
Additionally, it is preferred that forming the had according to the second semiconductor layer of the second conductive type, active layer and the first conductive type The sequence of semi-conductor layer is formed by the epitaxial layer of construction, the epitaxial layer of the light as the sending first wave length and the sending The epitaxial layer of the light of two wavelength.
In this way, just be suitable for being formed the method for the illumination region of double-heterostructure if the manufacturing method of the present invention.
Additionally, it is preferred that further comprising the steps of: after the step of removing the first substrate or the second substrate, in the hair Out in the epitaxial layer of the epitaxial layer of the light of first wave length and the light of the sending second wave length, being each formed with removing, this first half is led The removing unit and the non-removing unit other than the removing unit of body layer or second semiconductor layer and the active layer, and non-removed in this It goes to portion that the first Ohmic electrode is set and the second Ohmic electrode is set in the removing unit.
If the manufacturing method of the present invention, according to such step, just Ohmic electrode can be set in illumination region.
In addition, be bonded first epitaxial substrate epitaxial layer and second epitaxial substrate epitaxial layer the step of before, It is preferred that the epitaxial layer and second epitaxial substrate of first epitaxial substrate epitaxial layer at least one on form benzo ring Butylene film, later, by the benzocyclobutene film be bonded first epitaxial substrate epitaxial layer and second epitaxial substrate it is outer Prolong layer.
In addition, be bonded first epitaxial substrate epitaxial layer and second epitaxial substrate epitaxial layer the step of before, It is preferred that the epitaxial layer and second epitaxial substrate of first epitaxial substrate epitaxial layer at least one on form SiO2Film, Later, pass through the SiO2Film is bonded the epitaxial layer of first epitaxial substrate and the epitaxial layer of second epitaxial substrate.
Pass through benzocyclobutene film or SiO2Film is bonded the epitaxial layer and second epitaxial substrate of first epitaxial substrate Epitaxial layer, thus just can make epitaxial layer it is mutual be bonded on it is more strong in mechanicalness.
(3) beneficial effect
It is such as above-mentioned, if light-emitting component of the invention, become by forming the different multiple illumination regions of emission wavelength In the same light-emitting component, blue~green system and the double-colored above display of Huang~red colour system are realized, and can make multi-wavelength Light do not interfere, these light are radiated to external light-emitting component while maintaining high brightness.Therefore, if the present invention Light-emitting component, by the light-emitting device array of particularly suitable thin space.In addition, if the manufacturer of light-emitting component of the invention Method can be crystallized into due to being engaged again after being respectively formed the illumination region of two kinds of emission wavelengths most suitable Grow up under elongate member each illumination region, and is able to obtain and has efficient luminescent layer (light-emitting component area to each emission wavelength Domain).Therefore, it just can produce easily and have the different multiple illumination regions of emission wavelength, and keep the light of multiple wavelength not mutual Interference, and these light can be radiated to outside while maintaining high brightness, apply also for the light-emitting device array of thin space Light-emitting component.
Detailed description of the invention
Fig. 1 is the schematic diagram for indicating the first embodiment of manufacturing method of light-emitting component of the invention.
Fig. 2 is the schematic diagram for indicating the second embodiment of manufacturing method of light-emitting component of the invention.
Fig. 3 is the schematic diagram of the third embodiment for the manufacturing method for indicating light-emitting component of the invention.
Fig. 4 is the schematic diagram for indicating the 4th embodiment of manufacturing method of light-emitting component of the invention.
Fig. 5 is the schematic diagram for indicating the 5th embodiment of manufacturing method of light-emitting component of the invention.
Fig. 6 is the schematic diagram for indicating the sixth embodiment of manufacturing method of light-emitting component of the invention.
Fig. 7 is the schematic diagram for indicating to be equipped with an example of the wiring substrate of light-emitting component of the invention.
Fig. 8 is another schematic diagram for indicating to be equipped with the wiring substrate of light-emitting component of the invention.
Fig. 9 is the schematic diagram for indicating to be installed on an example of light-emitting component of the invention of wiring substrate.
Specific embodiment
As above-mentioned, people are seeking to a kind of light-emitting component and the manufacturing method of the light-emitting component, which will send out The different multiple illumination regions of optical wavelength are formed in the same light-emitting component, and are suitable for the light-emitting device array of thin space.
The inventors of the present invention face the above subject, are constantly actively finding after research, if by two kinds of emission wavelengths Illumination region be respectively formed after the method that is engaged again, due to each hair that can grow up under the conditions of most suitable crystalline growth Light portion just can produce the light-emitting component that the different multiple illumination regions of emission wavelength are formed in the same light-emitting component easily, And then complete the present invention.
That is, the present invention is a kind of light-emitting component, comprising window layer and supporting substrate and it is set to the window layer and supporting substrate Upper and different emission wavelength multiple illumination regions, wherein multiple illumination region all has leads according to the second the half of the second conductive type The sequence of first semiconductor layer of body layer, active layer and the first conductive type is formed by construction, and has and remove this and the first half lead The removing unit and the non-removing unit other than the removing unit of body layer or second semiconductor layer and the active layer also have setting In the non-removing unit the first Ohmic electrode and be set to the second Ohmic electrode of the removing unit.
Hereinafter, will be explained in more detail with reference to the drawing the present invention, but the present invention is not limited to this.
(first embodiment)
About the first embodiment of light-emitting component of the invention, (h) referring to Fig.1 is illustrated.As shown in (h) of Fig. 1, Light-emitting component 12 in the first embodiment of the present invention be comprising as window layer and supporting substrate sapphire substrate 155, And it is set on sapphire substrate 155 and the illumination region that is made of the InGaN class material of bluish-green colour system and by reddish yellow colour system The light-emitting component of illumination region that is constituted of AlGaInP class material.
The illumination region being made of the InGaN class material of bluish-green colour system has according to by AlsGa1-sThe N that N (0≤s≤1) is constituted Type coating layer (the second semiconductor layer) 151, by InsGa1-sN (0≤s≤1) constitute active layer 152 and by AlsGa1-sN(0≤s ≤ 1) sequence of the p-type coating layer (the first semiconductor layer) 153 constituted is formed by construction, and has and remove p-type coating layer 153 And active layer 152 removing unit 170 and the non-removing unit 160 other than removing unit 170, also have be set to non-removing unit 160 And it the third electrode (the first Ohmic electrode) 161 that connects with p-type coating layer 153 and is set to removing unit 170 and is draped over one's shoulders with N-type The 4th electrode (the second Ohmic electrode) 171 that coating 151 connects.
The illumination region being made of the AlGaInP class material of reddish yellow colour system has according to by (AlxGa1-x)yIn1-yP(0≤x≤ 1,0.4≤y≤0.6) constitute p-type coating layer (the first semiconductor layer) 103, by (AlxGa1-x)yIn1-yP (0≤x≤1,0.4≤ Y≤0.6) constitute active layer 102 and by (AlxGa1-x)yIn1-yThe N-type coating layer that P (0≤x≤1,0.4≤y≤0.6) is constituted The sequence of (the second semiconductor layer) 101 is formed by construction, and has the removing unit for removing N-type coating layer 101 and active layer 102 120 and removing unit 120 other than non-removing unit 110, also have be set to non-removing unit 110 and with 101 phase of N-type coating layer The first electrode (the first Ohmic electrode) 111 connect and the second electricity for being set to removing unit 120 and connecting with p-type coating layer 103 Pole (the second Ohmic electrode) 121.In addition, being engaged in by the illumination region that the AlGaInP class material of reddish yellow colour system is constituted by blue-green On the epitaxial layer that the InGaN class material of system is constituted.
In addition, two illumination regions are covered by insulating layer 115, and in first electrode 111, second electrode 121, third electricity Convex block (バ Application プ) 140 is formed on pole 161 and the 4th electrode 171.
Then by (a) referring to Fig.1 to (h), illustrate the manufacturer of the light-emitting component in first embodiment of the invention Method.Firstly, as shown in (a) of Fig. 1, by using such as Organometallic Vapor Phase epitaxy (MOVPE), on sapphire substrate 155 It stacks gradually by AlsGa1-sN (0≤s≤1) constitute N-type coating layer (the second semiconductor layer) 151, by InsGa1-sN(0≤s≤ 1) constitute active layer 152 and by AlsGa1-sThe p-type coating layer (the first semiconductor layer) 153 that N (0≤s≤1) is constituted, and make As blue, green luminescent material InGaN class epitaxial wafer 150.It, can also be in addition, production method is not limited to MOVPE It is made by molecular beam epitaxy (MBE) method or chemical beam epitaxy (CBE) method.
In addition as shown in (b) of Fig. 1, by using such as Organometallic Vapor Phase epitaxy (MOVPE), in GaAs substrate 105 On stack gradually by (AlxGa1-x)yIn1-yThe N-type coating layer (the second semiconductor layer) that P (0≤x≤1,0.4≤y≤0.6) is constituted 101, by (AlxGa1-x)yIn1-yP (0≤x≤1,0.4≤y≤0.6) constitute active layer 102 and by (AlxGa1-x)yIn1-yP The p-type coating layer (the first semiconductor layer) 103 that (0≤x≤1,0.4≤y≤0.6) is constituted, and make and be used as red, Yellow luminous material The AlGaInP class epitaxial wafer 100 of material.In addition, production method is not limited to MOVPE, molecular beam epitaxy can also be passed through (MBE) method or the production of chemical beam epitaxy (CBE) method.
Then, as shown in (c) of Fig. 1, engagement InGaN class epitaxial wafer 150 and AlGaInP class epitaxial wafer 100.This When, by both AlGaInP class epitaxial wafer 100 and InGaN class epitaxial wafer 150 be soaked in alkaline solution (KOH aqueous solution or NaOH aqueous solution etc.) alkali process is carried out to surface, make AlGaInP class epitaxial wafer 100 and InGaN class extension brilliant in vacuum The epitaxial surface of circle 150 contacts each other (p-type coating layer 103 with p-type coating layer 153), with the pressure of 500N or more to the two progress Crimping, and by keeping the temperature at 500 DEG C or more, it just can form the bonded wafers 10 for engaging two wafers.
Alternatively, it is also possible to which before engagement, the GaAs substrate thickness of AlGaInP class epitaxial wafer 100 by etching or is ground Mill carries out the thickness of processing film to 50~100 μm or so.By processing film, AlGaInP class epitaxial wafer 100 is in the bonding Deformation is become easy, has the effect of promoting the yield rate after engagement.
Then, it as shown in (d) of Fig. 1, is formed and chemically etching and removes AlGaInP class epitaxial wafer 100 The wafer 11 of GaAs substrate 105.Chemically etching solution is preferably the chemically erosion for having etching selectivity to AlGaInP class material Liquid is carved, is generally removed by agent containing ammoniacal etchant.At this point, processing film or the substrate of removing may be sapphire substrate 155.
Then, as shown in (e) of Fig. 1, at the epitaxial layer being made of AlGaInP class material, by N-type coating layer 101 and A part of active layer 102 is removed, and removing unit 120 and non-removing unit 110 are formed.Removing at this time, such as screen can be passed through Non- removing unit 110 is covered to be etched and carry out again.Then, (non-to remove in the N-type coating layer 101 of AlGaInP class epitaxial wafer 100 Go to portion 110) on form first electrode (the first Ohmic electrode) 111, and in through partial cut-out N-type coating layer 101 and active layer 102 The local place in region (removing unit) 120 form second electrode (the second Ohmic electrode) 121.
Then shown such as (f) of Fig. 1 and (g), in the first electrode of the not formed epitaxial layer being made of InGaN class material 111 and second electrode 121 region 130 at, a part of p-type coating layer 153 and active layer 152 is removed, formation removes Go portion 170 and non-removing unit 160.Removing at this time, such as can be constituted by shielding non-removing unit 160 and AlGaInP class material Illumination region, then with contain Cl class gas (Cl2、BCl3、SiCl4) in the environment of ICP etching method carry out.
Then (non-in the part of the p-type coating layer 153 of the InGaN class epitaxial wafer 150 of exposing as shown in (g) of Fig. 1 Removing unit 160) third electrode (the first Ohmic electrode) 161 is formed, and in through partial cut-out p-type coating layer 153 and active layer 152 Region (removing unit) 170 part place formation the 4th electrode (the second Ohmic electrode) 171.
Then as shown in (h) of Fig. 1, in first electrode 111, second electrode 121, third electrode 161, the 4th electrode 171 On form convex block 140, and make Light emitting wafer (light-emitting component) 12.In addition, convex block can be formed by pin (ス タ ッ De), It can also be formed by plating.
(second embodiment)
About the second embodiment of light-emitting component of the invention, will be illustrated referring to (h) of Fig. 2.As shown in (h) of Fig. 2, Light-emitting component 22 in second embodiment of the present invention be comprising as window layer and supporting substrate sapphire substrate 255, And it is set to the illumination region being made of the InGaN class material of bluish-green colour system on sapphire substrate 255 and by reddish yellow colour system The light-emitting component of illumination region that is constituted of AlGaInP class material.
The illumination region being made of the InGaN class material of bluish-green colour system has according to by AlsGa1-sThe N that N (0≤s≤1) is constituted Type coating layer (the second semiconductor layer) 251, by InsGa1-sN (0≤s≤1) constitute active layer 252 and by AlsGa1-sN(0≤s ≤ 1) sequence of the p-type coating layer (the first semiconductor layer) 253 constituted is formed by construction, and has and remove p-type coating layer 253 And active layer 252 removing unit 270 and the non-removing unit 260 other than removing unit 270, also have be set to non-removing unit 260 And the third electrode (the first Ohmic electrode) 261 that connects with p-type coating layer 253 and it is set to removing unit 270 and with the second half The 4th electrode (the second Ohmic electrode) 271 that conductor layer 251 connects.
The illumination region being made of the AlGaInP class material of reddish yellow colour system has according to by (AlxGa1-x)yIn1-yP(0≤x≤ 1,0.4≤y≤0.6) constitute p-type coating layer (the first semiconductor layer) 203, by (AlxGa1-x)yIn1-yP (0≤x≤1,0.4≤ Y≤0.6) constitute active layer 202 and by (AlxGa1-x)yIn1-yThe N-type coating layer that P (0≤x≤1,0.4≤y≤0.6) is constituted The sequence of (the second semiconductor layer) 201 is formed by construction, and has the removing unit for removing N-type coating layer 201 and active layer 202 220 and removing unit 220 other than non-removing unit 210, also have be set to non-removing unit 210 and with 201 phase of N-type coating layer The first electrode (the first Ohmic electrode) 211 connect and the second electricity for being set to removing unit 220 and connecting with p-type coating layer 203 Pole (the second Ohmic electrode) 221.In addition, the illumination region being made of the AlGaInP class material of reddish yellow colour system is via benzocyclobutene On the epitaxial layer that the InGaN class material that film 204 is engaged in bluish-green colour system is constituted.
In addition, two illumination regions are covered by insulating layer 215, and in first electrode 211, second electrode 221, third electricity Convex block 240 is formed on pole 261 and the 4th electrode 271.
Then by (a) to (h) referring to Fig. 2, illustrate the manufacturer of the light-emitting component in second embodiment of the present invention Method.Firstly, as shown in (a) of Fig. 2, by using such as Organometallic Vapor Phase epitaxy (MOVPE), on sapphire substrate 255 It stacks gradually by AlsGa1-sN (0≤s≤1) constitute N-type coating layer (the second semiconductor layer) 251, by InsGa1-sN(0≤s≤ 1) constitute active layer 252 and by AlsGa1-sThe p-type coating layer (the first semiconductor layer) 253 that N (0≤s≤1) is constituted, and make As blue, green luminescent material InGaN class epitaxial wafer 250.It, can also be in addition, production method is not limited to MOVPE It is made by molecular beam epitaxy (MBE) method or chemical beam epitaxy (CBE) method.
In addition, as shown in (b) of Fig. 2, by using such as Organometallic Vapor Phase epitaxy (MOVPE), in GaAs substrate 205 On stack gradually by (AlxGa1-x)yIn1-yThe N-type coating layer (the second semiconductor layer) that P (0≤x≤1,0.4≤y≤0.6) is constituted 201, by (AlxGa1-x)yIn1-yP (0≤x≤1,0.4≤y≤0.6) constitute active layer 202 and by (AlxGa1-x)yIn1-yP The p-type coating layer (the first semiconductor layer) 203 that (0≤x≤1,0.4≤y≤0.6) is constituted, and make and be used as red, Yellow luminous material The AlGaInP class epitaxial wafer 200 of material.In addition, production method is not limited to MOVPE, molecular beam epitaxy can also be passed through (MBE) method or the production of chemical beam epitaxy (CBE) method.
Then, in revolving speed 3, benzocyclobutene (BCB) is coated on AlGaInP class epitaxial wafer 200 by 000rpm or more Epitaxial surface (on p-type coating layer 203) forms 1 μm of film thickness or so of bcb film 204.Then as shown in (c) of Fig. 2, make Epitaxial surface (p-type coating layer 253) of the BCB coated face of AlGaInP class epitaxial wafer 200 towards InGaN class epitaxial wafer 250 is simultaneously Make its contact, the two is crimped with the pressure of 500N or more, and by keeping the temperature at 150 DEG C or more, it just can shape At the bonded wafers 20 for engaging two wafers.In addition, bcb film can be only formed in the first epitaxial substrate or the second epitaxial substrate Both any one, can also be formed in.
Alternatively, it is also possible to which before engagement, the GaAs substrate thickness of AlGaInP class epitaxial wafer 200 by etching or is ground Mill carries out processing film to 50~100 μm or so.By processing film, AlGaInP class epitaxial wafer 200 becomes to hold in the bonding It is easily-deformable, have the effect of promoting the yield rate after engagement.
Then as shown in (d) of Fig. 2, the GaAs for removing AlGaInP class epitaxial wafer 200 is formed and chemically etching The wafer 21 of substrate 205.Chemically etching solution is preferably the chemically etching for having etching selectivity to AlGaInP class material Liquid is generally removed by agent containing ammoniacal etchant.At this point, processing film or the substrate of removing may be sapphire substrate 255.
Then it as shown in (e) of Fig. 2, at the epitaxial layer being made of AlGaInP class material, by N-type coating layer 201 and lives Property layer 202 a part removed, form removing unit 220 and non-removing unit 210.Removing at this time, such as shielding can be passed through Non- removing unit 210 is etched again and carries out.Then in (the non-removing unit of N-type coating layer 201 of AlGaInP class epitaxial wafer 200 210) first electrode (the first Ohmic electrode) 211 is formed on, and in the area through partial cut-out N-type coating layer 201 and active layer 202 The local place in domain (removing unit) 220 forms second electrode (the second Ohmic electrode) 221.
Then shown such as (f) of Fig. 2 and (g), in the first electrode of the not formed epitaxial layer being made of InGaN class material 211 and second electrode 221 region 230 at, with contain F class gas (CF4、CHF3、C2F6、C3F8、NF3、SF4、SF6) environment Under ICP etching method remove bcb film 204, expose InGaN class epitaxial wafer surface (p-type coating layer 253).Then, by p-type A part of coating layer 253 and active layer 252 is removed, and removing unit 270 and non-removing unit 260 are formed.Removing at this time, example It such as can be by the illumination region that shields non-removing unit 260 and be made of AlGaInP class material, then to contain Cl class gas (Cl2、 BCl3、SiCl4) in the environment of ICP etching method carry out.
Then as shown in (g) of Fig. 2, in a part of the p-type coating layer 253 of the InGaN class epitaxial wafer 250 of exposing (non-removing unit 260) forms third electrode (the first Ohmic electrode) 261, and in through partial cut-out p-type coating layer 253 and active layer The 4th electrode (the second Ohmic electrode) 271 is formed at the part in 252 region (removing unit) 270.
Then as shown in (h) of Fig. 2, in first electrode 211, second electrode 221, third electrode 261, the 4th electrode 271 On form convex block 240, and make Light emitting wafer (light-emitting component) 22.In addition, convex block can be formed by pin, can also pass through Plating is formed.
(third embodiment)
About the third embodiment of light-emitting component of the invention, will be illustrated referring to (h) of Fig. 3.As shown in (h) of Fig. 3, Light-emitting component 32 in third embodiment of the present invention be the sapphire substrate 355 comprising window layer and supporting substrate and The illumination region being made of the InGaN class material of bluish-green colour system that is set on sapphire substrate 355 and by reddish yellow colour system The light-emitting component for the illumination region that AlGaInP class material is constituted.
The illumination region being made of the InGaN class material of bluish-green colour system has according to by AlsGa1-sThe N that N (0≤s≤1) is constituted Type coating layer (the second semiconductor layer) 351, by InsGa1-sN (0≤s≤1) constitute active layer 352 and by AlsGa1-sN(0≤s ≤ 1) sequence of the p-type coating layer (the first semiconductor layer) 353 constituted is formed by construction, and has and remove p-type coating layer 353 And active layer 352 removing unit 370 and the non-removing unit 360 other than removing unit 370, also have be set to non-removing unit 360 And it the third electrode (the first Ohmic electrode) 361 that connects with p-type coating layer 353 and is set to removing unit 370 and is draped over one's shoulders with N-type The 4th electrode (the second Ohmic electrode) 371 that coating 351 connects.
The illumination region being made of the AlGaInP class material of reddish yellow colour system has according to by (AlxGa1-x)yIn1-yP(0≤x≤ 1,0.4≤y≤0.6) constitute p-type coating layer (the first semiconductor layer) 303, by (AlxGa1-x)yIn1-yP (0≤x≤1,0.4≤ Y≤0.6) constitute active layer 302 and by (AlxGa1-x)yIn1-yThe N-type coating layer that P (0≤x≤1,0.4≤y≤0.6) is constituted The sequence of (the second semiconductor layer) 301 is formed by construction, and has the removing unit for removing N-type coating layer 301 and active layer 302 320 and removing unit 320 other than non-removing unit 310, also have be set to non-removing unit 310 and with 301 phase of N-type coating layer The first electrode (the first Ohmic electrode) 311 connect and the second electricity for being set to removing unit 320 and connecting with p-type coating layer 303 Pole (the second Ohmic electrode) 321.In addition, the illumination region being made of the AlGaInP class material of reddish yellow colour system passes through double-deck SiO2 Film 306,356 and be engaged on the epitaxial layer being made of the InGaN class material of bluish-green colour system.
In addition, two illumination regions are covered by insulating layer 315, and in first electrode 311, second electrode 321, third electricity Convex block 340 is formed on pole 361 and the 4th electrode 371.
Then by (a) to (h) referring to Fig. 3, illustrate the manufacturer of the light-emitting component in third embodiment of the present invention Method.First as Fig. 3 (a) shown in, by using such as Organometallic Vapor Phase epitaxy (MOVPE), on sapphire substrate 355 according to Secondary stacking is by AlsGa1-sN (0≤s≤1) constitute N-type coating layer (the second semiconductor layer) 351, by InsGa1-sN(0≤s≤1) The active layer 352 of composition and by AlsGa1-sThe p-type coating layer (the first semiconductor layer) 353 that N (0≤s≤1) is constituted, and make As blue, green luminescent material InGaN class epitaxial wafer 350.In addition, production method is not limited to MOVPE, can also lead to Cross molecular beam epitaxy (MBE) method or the production of chemical beam epitaxy (CBE) method.Then, SiO is formed on p-type coating layer 3532Film 356。
In addition as shown in (b) of Fig. 3, by using such as Organometallic Vapor Phase epitaxy (MOVPE), in GaAs substrate 305 On stack gradually by (AlxGa1-x)yIn1-yThe N-type coating layer (the second semiconductor layer) that P (0≤x≤1,0.4≤y≤0.6) is constituted 301, by (AlxGa1-x)yIn1-yP (0≤x≤1,0.4≤y≤0.6) constitute active layer 302 and by (AlxGa1-x)yIn1-yP The p-type coating layer (the first semiconductor layer) 303 that (0≤x≤1,0.4≤y≤0.6) is constituted, and make and be used as red, Yellow luminous material The AlGaInP class epitaxial wafer 300 of material.In addition, production method is not limited to MOVPE, molecular beam epitaxy can also be passed through (MBE) method or the production of chemical beam epitaxy (CBE) method.Then, SiO is formed on p-type coating layer 3032Film 306.In addition, SiO2 Both film can only be formed in any one of the first epitaxial substrate or the second epitaxial substrate, can also be formed in.
Then as shown in (c) of Fig. 3, engagement InGaN class epitaxial wafer 350 and AlGaInP class epitaxial wafer 300.At this point, Both AlGaInP class epitaxial wafer 300 and InGaN class epitaxial wafer 350 are soaked in alkaline solution (KOH aqueous solution or NaOH Aqueous solution etc.) alkali process is carried out to surface, then make the SiO of AlGaInP class epitaxial wafer 300 and InGaN class epitaxial wafer 3502 Film contacts in vacuum each other, is crimped with the pressure of 500N or more to the two, and by keep the temperature at 700 DEG C with On, it just can form the bonded wafers 30 for engaging two wafers.
Then as shown in (d) of Fig. 3, the GaAs that AlGaInP class epitaxial wafer 300 is removed and chemically etching is formed The wafer 31 of substrate 305.Chemically etching solution is preferably the chemically etching for having etching selectivity to AlGaInP class material Liquid is generally removed by agent containing ammoniacal etchant.At this point, processing film or the substrate of removing may be sapphire substrate 355.
Then, as shown in (e) of Fig. 3, at the epitaxial layer being made of AlGaInP class material, by N-type coating layer 301 and A part of active layer 302 is removed, and removing unit 320 and non-removing unit 310 are formed.Removing at this time, such as screen can be passed through Non- removing unit 310 is covered to be etched and carry out again.Then in (the non-removing of N-type coating layer 301 of AlGaInP class epitaxial wafer 300 Portion 310) on form first electrode (the first Ohmic electrode) 311, and in partial cut-out N-type coating layer 301 and active layer 302 The local place in region (removing unit) 320 forms second electrode (the second Ohmic electrode) 321.
Then, shown in such as (f) of Fig. 3 and (g), in the first electrode of the not formed epitaxial layer being made of InGaN class material 311 and second electrode 321 region 330 at, with contain F class gas (CF4、CHF3、C2F6、C3F8、NF3、SF4、SF6) environment Under ICP etching method remove SiO2Film 306,356 exposes the surface (p-type coating layer 353) of InGaN class epitaxial wafer.Then will A part of p-type coating layer 353 and active layer 352 is removed, and removing unit 370 and non-removing unit 360 are formed.Removing at this time It goes, such as the illumination region that can be made up of the non-removing unit 360 of shielding and AlGaInP class material, then to contain Cl class gas (Cl2、 BCl3、SiCl4) in the environment of ICP etching method carry out.
Then as shown in (g) of Fig. 3, in a part of the p-type coating layer 353 of the InGaN class epitaxial wafer 350 of exposing Third electrode (the first Ohmic electrode) 361 is formed in (non-removing unit 360), and in partial cut-out p-type coating layer 353 and activity The 4th electrode (the second Ohmic electrode) 371 is formed at the part in the region (removing unit) 370 of layer 352.
Then as shown in (h) of Fig. 3, in first electrode 311, second electrode 321, third electrode 361, the 4th electrode 371 On form convex block 340, and make Light emitting wafer (light-emitting component) 32.In addition, convex block can be formed by pin, can also pass through Plating is formed.
(the 4th embodiment)
About the 4th embodiment of light-emitting component of the invention, will be illustrated referring to (h) of Fig. 4.As shown in (h) of Fig. 4, Light-emitting component 42 in the 4th embodiment of the invention includes sapphire substrate 455, the Yi Jishe of window layer and supporting substrate The illumination region being made of the InGaN class material of bluish-green colour system that is placed on sapphire substrate 455 and by reddish yellow colour system The light-emitting component for the illumination region that AlGaInP class material is constituted.
The illumination region being made of the InGaN class material of bluish-green colour system has according to by AlsGa1-sThe N that N (0≤s≤1) is constituted Type coating layer (the second semiconductor layer) 451, by InsGa1-sN (0≤s≤1) constitute active layer 452 and by AlsGa1-sN(0≤s ≤ 1) sequence of the p-type coating layer (the first semiconductor layer) 453 constituted is formed by construction, and has and remove p-type coating layer 453 And active layer 452 removing unit 470 and the non-removing unit 460 other than removing unit 470, also have be set to non-removing unit 460 And it the third electrode (the first Ohmic electrode) 461 that connects with p-type coating layer 453 and is set to removing unit 470 and is draped over one's shoulders with N-type The 4th electrode (the second Ohmic electrode) 471 that coating 451 connects.
The illumination region being made of the AlGaInP class material of reddish yellow colour system has according to by (AlxGa1-x)yIn1-yP(0≤x≤ 1,0.4≤y≤0.6) constitute p-type coating layer (the first semiconductor layer) 403, by (AlxGa1-x)yIn1-yP (0≤x≤1,0.4≤ Y≤0.6) constitute active layer 402 and by (AlxGa1-x)yIn1-yThe N-type coating layer that P (0≤x≤1,0.4≤y≤0.6) is constituted The sequence of (the second semiconductor layer) 401 is formed by construction, and has the removing unit for removing N-type coating layer 401 and active layer 402 420 and removing unit 420 other than non-removing unit 410, also have be set to non-removing unit 410 and with 401 phase of N-type coating layer The first electrode (the first Ohmic electrode) 411 connect and the second electricity for being set to removing unit 420 and connecting with p-type coating layer 403 Pole (the second Ohmic electrode) 421.It constitutes in addition, being engaged in by the illumination region that the AlGaInP class material of reddish yellow colour system is constituted by indigo plant The epitaxial layer (N-type coating layer 451, active layer 452 and p-type coating layer 453) for the illumination region that the InGaN class material of green system is constituted On.
In addition, two illumination regions are covered by insulating layer 415, and in first electrode 411, second electrode 421, third electrode 461 and the 4th convex block 440 is formed on electrode 471.
Then, by (a) to (h) referring to Fig. 4, illustrate the manufacturer of the light-emitting component in the 4th embodiment of the invention Method.Firstly, as shown in (a) of Fig. 4, by using such as Organometallic Vapor Phase epitaxy (MOVPE), on sapphire substrate 455 It stacks gradually by AlsGa1-sN (0≤s≤1) constitute N-type coating layer (the second semiconductor layer) 451, by InsGa1-sN(0≤s≤ 1) constitute active layer 452 and by AlsGa1-sThe p-type coating layer (the first semiconductor layer) 453 that N (0≤s≤1) is constituted, and make As blue, green luminescent material InGaN class epitaxial wafer 450.It, can also be in addition, production method is not limited to MOVPE It is made by molecular beam epitaxy (MBE) method or chemical beam epitaxy (CBE) method.
In addition, as shown in (b) of Fig. 4, by using such as Organometallic Vapor Phase epitaxy (MOVPE), in GaAs substrate 405 On stack gradually by (AlxGa1-x)yIn1-yThe N-type coating layer (the second semiconductor layer) that P (0≤x≤1,0.4≤y≤0.6) is constituted 401, by (AlxGa1-x)yIn1-yP (0≤x≤1,0.4≤y≤0.6) constitute active layer 402 and by (AlxGa1-x)yIn1-yP The p-type coating layer (the first semiconductor layer) 403 that (0≤x≤1,0.4≤y≤0.6) is constituted, and make and be used as red, Yellow luminous material The AlGaInP class epitaxial wafer 400 of material.In addition, production method is not limited to MOVPE, molecular beam epitaxy can also be passed through (MBE) method or the production of chemical beam epitaxy (CBE) method.
Then, as shown in (c) of Fig. 4, engagement InGaN class epitaxial wafer 450 and AlGaInP class epitaxial wafer 400.This When, by both AlGaInP class epitaxial wafer 400 and InGaN class epitaxial wafer 450 be soaked in alkaline solution (KOH aqueous solution or NaOH aqueous solution etc.) alkali process is carried out to surface, make AlGaInP class epitaxial wafer 400 and InGaN class extension brilliant in vacuum The epitaxial surface of circle 450 contacts each other (p-type coating layer 403 with p-type coating layer 453), with the pressure of 500N or more to the two progress Crimping, and by keeping the temperature at 500 DEG C or more, it just can form the bonded wafers 40 for engaging two wafers.
Alternatively, it is also possible to which before engagement, the GaAs substrate thickness of AlGaInP class epitaxial wafer 400 by etching or is ground Mill carries out processing film to 50~100 μm or so.By processing film, AlGaInP class epitaxial wafer 400 becomes to hold in the bonding It is easily-deformable, have the effect of promoting the yield rate after engagement.
Then as shown in (d) of Fig. 4, the GaAs that AlGaInP class epitaxial wafer 400 is removed and chemically etching is formed The wafer 41 of substrate 405.Chemically etching solution is preferably the chemically etching for having etching selectivity to AlGaInP class material Liquid is generally removed by agent containing ammoniacal etchant.At this point, processing film or the substrate of removing may be sapphire substrate 455.
Then, as shown in (e) of Fig. 4, in the N-type coating layer 401 (non-removing unit 410) of AlGaInP class epitaxial wafer 400 Upper formation first electrode (the first Ohmic electrode) 411, and the hole or trench as deep as p-type coating layer 403 are outputed in region 420 Shape (that is, removing unit that setting removes N-type coating layer 401 and active layer 402), and formed in the bottom in region 420 and draped over one's shoulders with p-type The second electrode (the second Ohmic electrode) 421 that coating 403 connects.
Then, as shown in (f) of Fig. 4, by not formed first electrode at the epitaxial layer being made of AlGaInP class material 411 and a part in region 430 of second electrode 421 removed.The removing in region 430, which uses, contains Cl class gas (Cl2、 BCl3、SiCl4) in the environment of ICP etching method, and expose the surface (p-type coating layer 453) of InGaN class epitaxial wafer.
Then, (non-in the part of the p-type coating layer 453 of the InGaN class epitaxial wafer 450 of exposing as shown in (g) of Fig. 4 Removing unit 460) third electrode (the first Ohmic electrode) 461 is formed, and the hole as deep as N-type coating layer 451 is outputed in region 470 Or trench shape (that is, removing unit that setting removes p-type coating layer 453 and active layer 452) and the bottom shape in region 470 At the 4th electrode (the second Ohmic electrode) 471 to connect with N-type coating layer 451.
Then, as shown in (h) of Fig. 4, in first electrode 411, second electrode 421, third electrode 461, the 4th electrode 471 On form convex block 440, and make Light emitting wafer (light-emitting component 42).In addition, convex block can be formed by pin, can also pass through Plating is formed.
(the 5th embodiment)
About the 5th embodiment of light-emitting component of the invention, will be illustrated referring to (h) of Fig. 5.As shown in (h) of Fig. 5, Light-emitting component 52 in the 5th embodiment of the invention be the sapphire substrate 555 comprising window layer and supporting substrate and The illumination region being made of the InGaN class material of bluish-green colour system that is set on sapphire substrate 555 and by reddish yellow colour system The light-emitting component for the illumination region that AlGaInP class material is constituted.
The illumination region being made of the InGaN class material of bluish-green colour system has according to by AlsGa1-sThe N that N (0≤s≤1) is constituted Type coating layer (the second semiconductor layer) 551, by InsGa1-sN (0≤s≤1) constitute active layer 552 and by AlsGa1-sN(0≤s ≤ 1) sequence of the p-type coating layer (the first semiconductor layer) 553 constituted is formed by construction, and has and remove p-type coating layer 553 And active layer 552 removing unit 570 and the non-removing unit 560 other than removing unit 570, also have be set to non-removing unit 560 And it the third electrode (the first Ohmic electrode) 561 that connects with p-type coating layer 553 and is set to removing unit 570 and is draped over one's shoulders with N-type The 4th electrode (the second Ohmic electrode) 571 that coating 551 connects.
The illumination region being made of the AlGaInP class material of reddish yellow colour system has according to by (AlxGa1-x)yIn1-yP(0≤x≤ 1,0.4≤y≤0.6) constitute p-type coating layer (the first semiconductor layer) 503, by (AlxGa1-x)yIn1-yP (0≤x≤1,0.4≤ Y≤0.6) constitute active layer 502 and by (AlxGa1-x)yIn1-yThe N-type coating layer that P (0≤x≤1,0.4≤y≤0.6) is constituted The sequence of (the second semiconductor layer) 501 is formed by construction, and has the removing unit for removing N-type coating layer 501 and active layer 502 520 and removing unit 520 other than non-removing unit 510, also have be set to non-removing unit 510 and with 501 phase of N-type coating layer The first electrode (the first Ohmic electrode) 511 connect and the second electricity for being set to removing unit 520 and connecting with p-type coating layer 503 Pole (the second Ohmic electrode) 521.In addition, the illumination region being made of the AlGaInP class material of reddish yellow colour system is via benzocyclobutene Film 504 is engaged in epitaxial layer (the N-type coating layer 551, activity for constituting the illumination region being made of the InGaN class material of bluish-green colour system Layer 552 and p-type coating layer 553) on.
In addition, two illumination regions are covered by insulating layer 515, and in first electrode 511, second electrode 521, third electrode 561 and the 4th convex block 540 is formed on electrode 571.
Then, by (a) to (h) referring to Fig. 5, illustrate the manufacturer of the light-emitting component in the 5th embodiment of the invention Method.First as Fig. 5 (a) shown in, by using such as Organometallic Vapor Phase epitaxy (MOVPE), on sapphire substrate 555 according to Secondary stacking is by AlsGa1-sN (0≤s≤1) constitute N-type coating layer (the second semiconductor layer) 551, by InsGa1-sN(0≤s≤1) The active layer 552 of composition and by AlsGa1-sThe p-type coating layer (the first semiconductor layer) 553 that N (0≤s≤1) is constituted, and make As blue, green luminescent material InGaN class epitaxial wafer 550.In addition, production method is not limited to MOVPE, can also lead to Cross molecular beam epitaxy (MBE) method or the production of chemical beam epitaxy (CBE) method.
In addition, as shown in (b) of Fig. 5, by using such as Organometallic Vapor Phase epitaxy (MOVPE), in GaAs substrate 505 On stack gradually by (AlxGa1-x)yIn1-yThe N-type coating layer (the second semiconductor layer) that P (0≤x≤1,0.4≤y≤0.6) is constituted 501, by (AlxGa1-x)yIn1-yP (0≤x≤1,0.4≤y≤0.6) constitute active layer 502 and by (AlxGa1-x)yIn1-yP The p-type coating layer (the first semiconductor layer) 503 that (0≤x≤1,0.4≤y≤0.6) is constituted, and make and be used as red, Yellow luminous material The AlGaInP class epitaxial wafer 500 of material.In addition, production method is not limited to MOVPE, molecular beam epitaxy can also be passed through (MBE) method or the production of chemical beam epitaxy (CBE) method.
Then, in revolving speed 3, benzocyclobutene (BCB) is coated on AlGaInP class epitaxial wafer 500 by 000rpm or more Epitaxial surface (on p-type coating layer 503) forms 1 μm of film thickness or so of bcb film 504.Then as shown in (c) of Fig. 5, make Epitaxial surface (p-type coating layer 553) of the BCB coated face of AlGaInP class epitaxial wafer 500 towards InGaN class epitaxial wafer 550 is simultaneously Make its contact, the two is crimped with the pressure of 500N or more, and by keeping the temperature at 150 DEG C or more, it just can shape At the bonded wafers 50 for engaging two wafers.In addition, bcb film can be only formed in the first epitaxial substrate and the second epitaxial substrate Both any one, can also be formed in.
Alternatively, it is also possible to which before engagement, the GaAs substrate thickness of AlGaInP class epitaxial wafer 500 by etching or is ground Mill carries out the thickness of processing film to 50~100 μm or so.By processing film, AlGaInP class epitaxial wafer 500 is in the bonding Deformation is become easy, has the effect of promoting the yield rate after engagement.
Then, as shown in (d) of Fig. 5, formation removes AlGaInP class epitaxial wafer 500 and chemically etching The wafer 51 of GaAs substrate 505.Chemically etching solution is preferably the chemically erosion for having etching selectivity to AlGaInP class material Liquid is carved, is generally removed by agent containing ammoniacal etchant.At this point, processing film or the substrate of removing may be sapphire substrate 555.
Then, as shown in (e) of Fig. 5, in the N-type coating layer 501 (non-removing unit 510) of AlGaInP class epitaxial wafer 500 Upper formation first electrode (the first Ohmic electrode) 511, and the hole or trench as deep as p-type coating layer 503 are outputed in region 520 Shape (that is, removing unit that setting removes N-type coating layer 501 and active layer 502), and formed in the bottom in region 520 and draped over one's shoulders with p-type The second electrode (the second Ohmic electrode) 521 that coating 503 connects.
Then, as shown in (f) of Fig. 5, by not formed first electrode at the epitaxial layer that Yu You AlGaInP class material is constituted 511 and a part in region 530 of second electrode 521 removed.The removing in region 530, which uses, contains Cl class gas (Cl2、 BCl3、SiCl4) in the environment of ICP etching method, and expose the bcb film 504 on the surface of InGaN class epitaxial wafer.Then, with Contain F class gas (CF4、CHF3、C2F6、C3F8、NF3、SF4、SF6) in the environment of ICP etching method remove bcb film 504, expose The surface (p-type coating layer 553) of InGaN class epitaxial wafer.
Then, as shown in (g) of Fig. 5, in a part of the p-type coating layer 553 of the InGaN class epitaxial wafer 550 of exposing Third electrode (the first Ohmic electrode) 561 is formed in (non-removing unit 560), and is outputed in region 570 as deep as N-type coating layer 551 Hole or trench shape (that is, removing unit that setting removes p-type coating layer 553 and active layer 552), and in region 570 The 4th electrode (the second Ohmic electrode) 571 to connect with N-type coating layer 551 is formed on bottom.
Then, as shown in (h) of Fig. 5, in first electrode 511, second electrode 521, third electrode 561, the 4th electrode 571 On form convex block 540, and make Light emitting wafer (light-emitting component) 52.In addition, convex block can be formed by pin, can also pass through Plating is formed.
(sixth embodiment)
About the sixth embodiment of light-emitting component of the invention, will be illustrated referring to (h) of Fig. 6.As shown in (h) of Fig. 6, Light-emitting component 62 in sixth embodiment of the invention be the sapphire substrate 655 comprising window layer and supporting substrate and The illumination region being made of the InGaN class material of bluish-green colour system that is set on sapphire substrate 655 and by reddish yellow colour system The light-emitting component for the illumination region that AlGaInP class material is constituted.
The illumination region being made of the InGaN class material of bluish-green colour system has according to by AlsGa1-sThe N that N (0≤s≤1) is constituted Type coating layer (the second semiconductor layer) 651, by InsGa1-sN (0≤s≤1) constitute active layer 652 and by AlsGa1-sN(0≤s ≤ 1) sequence of the p-type coating layer (the first semiconductor layer) 653 constituted is formed by construction, and has and remove p-type coating layer 653 And active layer 652 removing unit 670 and the non-removing unit 660 other than removing unit 670, also have be set to non-removing unit 660 And it the third electrode (the first Ohmic electrode) 661 that connects with p-type coating layer 653 and is set to removing unit 670 and is draped over one's shoulders with N-type The 4th electrode (the second Ohmic electrode) 671 that coating 651 connects.
The illumination region being made of the AlGaInP class material of reddish yellow colour system has according to by (AlxGa1-x)yIn1-yP(0≤x≤ 1,0.4≤y≤0.6) constitute p-type coating layer (the first semiconductor layer) 603, by (AlxGa1-x)yIn1-yP (0≤x≤1,0.4≤ Y≤0.6) constitute active layer 602 and by (AlxGa1-x)yIn1-yThe N-type coating layer that P (0≤x≤1,0.4≤y≤0.6) is constituted The sequence of (the second semiconductor layer) 601 is formed by construction, and has the removing unit for removing N-type coating layer 601 and active layer 602 620 and removing unit 620 other than non-removing unit 610, also have be set to non-removing unit 610 and with 601 phase of N-type coating layer The first electrode (the first Ohmic electrode) 611 connect and the second electricity for being set to removing unit 620 and connecting with p-type coating layer 603 Pole (the second Ohmic electrode) 621.In addition, the illumination region being made of the AlGaInP class material of reddish yellow colour system is via the double-deck SiO2Film 606,656 epitaxial layer (the N-type coating layer 651, active layer for being engaged in the illumination region being made of the InGaN class material of bluish-green colour system 652 and p-type coating layer 653) on.
In addition, two illumination regions are covered by insulating layer 615, and in first electrode 611, second electrode 621, third electrode 661 and the 4th convex block 640 is formed on electrode 671.
Then, by (a) to (h) referring to Fig. 6, illustrate the manufacturer of the light-emitting component in sixth embodiment of the invention Method.Firstly, as shown in (a) of Fig. 6, by using such as Organometallic Vapor Phase epitaxy (MOVPE), on sapphire substrate 655 It stacks gradually by AlsGa1-sN (0≤s≤1) constitute N-type coating layer (the second semiconductor layer) 651, by InsGa1-sN(0≤s≤ 1) constitute active layer 652 and by AlsGa1-sThe p-type coating layer (the first semiconductor layer) 653 that N (0≤s≤1) is constituted, and make As blue, green luminescent material InGaN class epitaxial wafer 650.It, can also be in addition, production method is not limited to MOVPE It is made by molecular beam epitaxy (MBE) method or chemical beam epitaxy (CBE) method.Then, SiO is formed on p-type coating layer 6532 Film 656.
In addition, as shown in (b) of Fig. 6, by using such as Organometallic Vapor Phase epitaxy (MOVPE), in GaAs substrate 605 On stack gradually by (AlxGa1-x)yIn1-yThe N-type coating layer (the second semiconductor layer) that P (0≤x≤1,0.4≤y≤0.6) is constituted 601, by (AlxGa1-x)yIn1-yP (0≤x≤1,0.4≤y≤0.6) constitute active layer 602 and by (AlxGa1-x)yIn1-yP The p-type coating layer (the first semiconductor layer) 603 that (0≤x≤1,0.4≤y≤0.6) is constituted, and make and be used as red, Yellow luminous material The AlGaInP class epitaxial wafer 600 of material.In addition, production method is not limited to MOVPE, molecular beam epitaxy can also be passed through (MBE) method or the production of chemical beam epitaxy (CBE) method.Then, SiO is formed on p-type coating layer 6032Film 606.In addition, SiO2 Film can also be formed in the two only in the formation of any one of the first epitaxial substrate or the second epitaxial substrate.
Then, as shown in (c) of Fig. 6, engagement InGaN class epitaxial wafer 650 and AlGaInP class epitaxial wafer 600.This When, by both AlGaInP class epitaxial wafer 600 and InGaN class epitaxial wafer 650 be soaked in alkaline solution (KOH aqueous solution or NaOH aqueous solution etc.) alkali process is carried out to surface, then make AlGaInP class epitaxial wafer 600 and InGaN class epitaxial wafer 650 SiO2Film contacts in vacuum each other, is crimped with the pressure of 500N or more to the two, and by keeping the temperature at 700 DEG C or more, it just can form the bonded wafers 60 for engaging two wafers.
Then, it as shown in (d) of Fig. 6, is formed and chemically etching and removes AlGaInP class epitaxial wafer 600 The wafer 61 of GaAs substrate 605.Chemically etching solution is preferably the chemically erosion for having etching selectivity to AlGaInP class material Liquid is carved, is generally removed by agent containing ammoniacal etchant.At this point, processing film or the substrate of removing may be sapphire substrate 655.
Then, as shown in (e) of Fig. 6, in the N-type coating layer 601 (non-removing unit 610) of AlGaInP class epitaxial wafer 600 Upper formation first electrode (the first Ohmic electrode) 611, and the hole or trench as deep as p-type coating layer 603 are outputed in region 620 Shape (that is, removing unit that setting removes N-type coating layer 601 and active layer 602), and formed in the bottom in region 620 and draped over one's shoulders with p-type The second electrode (the second Ohmic electrode) 621 that coating 603 connects.
Then, as shown in (f) of Fig. 6, by not formed first electrode at the epitaxial layer that Yu You AlGaInP class material is constituted 611 and a part in region 630 of second electrode 621 removed.The removing in region 630, which uses, contains Cl class gas (Cl2、 BCl3、SiCl4) in the environment of ICP etching method, expose the SiO that is formed on InGaN class epitaxial wafer2Film 606.Then, then To contain F class gas (CF4、CHF3、C2F6、C3F8、NF3、SF4、SF6) in the environment of ICP etching method remove SiO2Film 606, 656, expose the surface (p-type coating layer 653) of InGaN class epitaxial wafer.
Then, it as shown in (g) of Fig. 6, (is removed in the part of the p-type coating layer 653 of the InGaN class epitaxial wafer 650 of exposing Go to portion 660) formed third electrode (the first Ohmic electrode) 661, and in region 670 output as deep as p-type coating layer 651 hole or The shape (that is, removing unit that setting removes p-type coating layer 653 and active layer 652) of trench, and formed in the bottom in region 670 The 4th electrode (the second Ohmic electrode) 671 to connect with N-type coating layer 651.
Then, as shown in (h) of Fig. 6, in first electrode 611, second electrode 621, third electrode 661, the 4th electrode 671 On form convex block 640, and make Light emitting wafer (light-emitting component) 62.In addition, convex block can be formed by pin, can also pass through Plating is formed.
In addition, although in the light-emitting component manufactured by above-mentioned first to sixth embodiment, by bluish-green colour system From sapphire substrate (window layer and supporting substrate) side, according to N-type coating layer, (the second half lead the illumination region that InGaN class material is constituted Body layer), active layer, p-type coating layer (the first semiconductor layer) sequence and formed；And it is by the AlGaInP class material of reddish yellow colour system Expect the illumination region constituted from sapphire substrate (window layer and supporting substrate) side according to p-type coating layer (the first semiconductor layer), work Property layer, N-type coating layer (the second semiconductor layer) sequence and formed, but the present invention is not limited to this.To change in each hair The sequence of second semiconductor layer and the first semiconductor layer in light portion, as long as then making the first epitaxial substrate or the second epitaxial substrate When change the formation sequence of the second semiconductor and the first semiconductor.
In addition, will be even made of the AlGaInP class material of reddish yellow colour system as first to shown in sixth embodiment Illumination region the case where being engaged on the epitaxial layer being made of the InGaN class material of bluish-green colour system, due to by reddish yellow colour system The joint surface of the illumination region that AlGaInP class material is constituted and the epitaxial layer being made of the InGaN class material of bluish-green colour system is high electricity Resistance, therefore when the illumination region for constituting the AlGaInP class material by reddish yellow colour system is powered, it can't be energized to positioned at its underpart The epitaxial layer being made of the InGaN class material of bluish-green colour system.
(manufacturing method of light-emitting device array substrate)
Then it will be installed on referring to Fig. 7 to Fig. 9 for by the light-emitting component according to manufactured by above-mentioned first to sixth embodiment Wiring substrate and an example for manufacturing the method for light-emitting device array substrate is illustrated.
Initially, as shown in fig. 7, be arranged on Si wafer 700 blue, green based light-emitting device FET control unit 701 and Huang, Red based light-emitting device FET control unit 751.FET control unit 701,751 be respectively provided with source electrode (711,761), drain electrode (712, 762), grid oxidation film (713,763), grid (714,764), reversal zone (715,765).Drain electrode (712,762) passes through wiring (740,790) are connected to source electrode line (741,791).And in local setting pad electrode on wiring part (721,722,771,772) Portion (731,732,781,782), and form driving circuit wafer 800.
In addition, the driving circuit wafer 800 ' for being shown in Fig. 8 can be used also to replace the driving circuit wafer 800 for being shown in Fig. 7. For driving circuit wafer 800 ', as shown in figure 8, in Si wafer 700 ', FET control unit (701 ', 751 ') is not and wiring Portion (721 ', 722 ', 771 ', 772 ') and pad electrode portion (731 ', 732 ', 781 ', 782 ') are in identical face, but across leading Through-hole (745 ', 795 ') is formed in opposing face.In addition, source electrode (711 ', 761 '), drain electrode (712 ', 762 '), grid oxidation film (713 ', 763 '), grid (714 ', 764 '), reversal zone (715 ', 765 '), wiring (740 ', 790 ') and source electrode line (741 ', 791 ') it is identically formed with above-mentioned driving circuit wafer 800.
Then, Light emitting wafer (light-emitting component 12,22,32,42,52,62) and driving circuit wafer 800 are overlapped simultaneously Engagement, and be illustrated by taking first embodiment as an example.As shown in figure 9, with convex block 140 and driving circuit on Light emitting wafer 12 Mode that pad electrode portion (731,732,781,782) on wafer 800 is overlapped and be bonded, then apply 10N or more pressure and Ultrasonic combines convex block 140 and pad electrode portion (731,732,781,782), to obtain light-emitting device array substrate 900。
In addition, in the first embodiment, the folding that GaN is 2.4, AlGaInP to the refractive index of red~Yellow luminous wavelength Penetrating rate is then 3.4.The angle of total reflection at this time just can obtain the wide light distribution angle up to 40 degree.
In addition, in second and third embodiment, in order to via bcb film and SiO2Film is engaged, SiO2The refraction of film The refractive index that rate is 1.5, AlGaInP is then 3.4.The angle of total reflection at this time is 24 degree, and the light distribution compared with first embodiment Angle is narrow, but can obtain and more robustly engage in mechanical level compared with first embodiment.
In addition, the 4th into sixth embodiment, due to not to luminescent layer notch, but via hole is formed under Portion's layer carries out Ohmic contact, therefore can obtain wide luminescent layer area, so that being able to achieve increases the brightness of each element Light-emitting device array.
In addition, although configuring emission wavelength phase in in-plane to form 1 pixel first into third embodiment Different light-emitting component, but the 4th into sixth embodiment, the hair of multi-wavelength but can be laminated and is arranged along light removing direction Optical element, and the area for being achieved each pixel only has the area of bottom line needed for contact.Therefore, it just can incite somebody to action The element of each pixel is designed bigger, and element area is expanded, just can be by the irregular diminution of the characteristic of each element with this.
In addition, although presenting above-mentioned first to sixth embodiment using the InGaN class material by bluish-green colour system The illumination region constituted and the illumination region being made of the AlGaInP class material of reddish yellow colour system are as different more of emission wavelength The example of a illumination region, but it's not limited to that for illumination region in the present invention, and be able to use conventionally known various luminous Wavelength (material), such as in addition to above-mentioned material, could be used that the materials such as ZnSe class, ZnO class, GaO class.Then, in the member that shines In the manufacture of part, prepare the epitaxial substrate of the emission wavelength for having desired as the first epitaxial substrate and the second epitaxial substrate, And by engaging them, it just can manufacture and shine what the illumination region with a variety of desired emission wavelengths was composed easily Element.
It is such as above-mentioned, if light-emitting component of the invention, following light-emitting component is become, it can be by different by emission wavelength Multiple illumination regions be formed in the same light-emitting component and more than can realizing that for example blue~green system and Huang~red colour system are double-colored Display, and the light of multi-wavelength can be made not interfere, they are radiated to outside while maintaining high brightness.Cause This, if light-emitting component of the invention, by the light-emitting device array of particularly suitable thin space.In addition, shining if of the invention The manufacturing method of element can be most due to being engaged again after being respectively formed the illumination region of two kinds of emission wavelengths Grow up under the conditions of suitable crystalline growth each illumination region, and is able to obtain and has efficient luminescent layer to each emission wavelength (light-emitting component region).Therefore, it just can produce easily and have the different multiple illumination regions of emission wavelength, and make multiple wavelength Light do not interfere, they can be radiated to outside while maintaining high brightness, the light-emitting component battle array suitable for thin space The light-emitting component of column.
In addition, the present invention is not limited to above-mentioned embodiments.Above embodiment is to illustrate, all to have and this Technical idea documented by the claim of invention is substantially similarly constituted, and generates the scheme of identical function and effect, no matter being What object all includes within the technical scope of the present invention.

Claims (10)

1. a kind of light-emitting component, comprising window layer and supporting substrate and it is set on the window layer and supporting substrate and the wave that shines Long different multiple illumination regions, which is characterized in that
The multiple illumination region all has according to the second semiconductor layer of the second conductive type, active layer and the first conductive type The sequence of semi-conductor layer is formed by construction, and have remove first semiconductor layer or second semiconductor layer and Non- removing unit other than the removing unit of the active layer and the removing unit also has be set to the non-removing unit the One Ohmic electrode and the second Ohmic electrode for being set to the removing unit.
2. light-emitting component according to claim 1, which is characterized in that an illumination region in the multiple illumination region is by straight The epitaxial layer being formed on the window layer and supporting substrate is connect to be constituted, other illumination regions be then engaged in the epitaxial layer it On.
3. light-emitting component according to claim 2, which is characterized in that on being formed directly into the window layer and supporting substrate Epitaxial layer and the illumination region that is engaged on the epitaxial layer between there is benzocyclobutene film or SiO2Film.
4. light-emitting component according to any one of claim 1 to 3, which is characterized in that the multiple illumination region include by The illumination region and be made of the AlGaInP class material of reddish yellow colour system luminous that the InGaN class material of bluish-green colour system is constituted Portion.
5. a kind of manufacturing method of light-emitting component, which is characterized in that comprise the steps of:
Prepare the first epitaxial substrate and the second epitaxial substrate, wherein first epitaxial substrate is grown with sending on the first substrate The epitaxial layer of the light of first wave length, second epitaxial substrate are grown with the extension for issuing the light of second wave length in the second substrate Layer；
It is bonded the epitaxial layer of first epitaxial substrate and the epitaxial layer of second epitaxial substrate；And
The first substrate or the second substrate are removed from the epitaxial substrate by fitting.
6. the manufacturing method of light-emitting component according to claim 5, which is characterized in that be used as InGaN class material described AlGaInP class material is used as the epitaxial layer of the light for issuing second wave length by the epitaxial layer for issuing the light of first wave length.
7. the manufacturing method of light-emitting component according to claim 5 or 6, which is characterized in that formed to have and be led according to second The sequence of first semiconductor layer of the second semiconductor layer of electric type, active layer and the first conductive type is formed by the extension of construction Layer, as the epitaxial layer of the light for issuing first wave length and the epitaxial layer of the light for issuing second wave length.
8. the manufacturing method of light-emitting component according to claim 7, which is characterized in that further comprising the steps of: removing Epitaxial layer and the sending after the step of first substrate or the second substrate, in the light for issuing first wave length In the epitaxial layer of the light of second wave length, it is each formed with and removes first semiconductor layer or second semiconductor layer and institute The removing unit and the non-removing unit other than the removing unit for stating active layer, and first ohm of electricity is set in the non-removing unit Simultaneously the second Ohmic electrode is arranged in the removing unit in pole.
9. the manufacturing method of the light-emitting component according to any one of claim 5 to 8, which is characterized in that described in fitting Before the step of epitaxial layer of the epitaxial layer of first epitaxial substrate and second epitaxial substrate, in first epitaxial substrate Benzocyclobutene film, which is formed, at least one of the epitaxial layer of epitaxial layer and second epitaxial substrate passes through the benzene later And cyclobutane film is bonded the epitaxial layer of first epitaxial substrate and the epitaxial layer of second epitaxial substrate.
10. the manufacturing method of the light-emitting component according to any one of claim 5 to 8, which is characterized in that described in fitting Before the step of epitaxial layer of the epitaxial layer of first epitaxial substrate and second epitaxial substrate, in first epitaxial substrate SiO is formed at least one of the epitaxial layer of epitaxial layer and second epitaxial substrate2Film passes through the SiO later2Film patch Close the epitaxial layer of first epitaxial substrate and the epitaxial layer of second epitaxial substrate.
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