JPH08213657A - Visible light led device and its manufacture - Google Patents

Abstract

PURPOSE: To emit trichromatic light with arbitrary intensity, by mounting the respective LED's of red, green and blue which are formed individually, in the manner in which the conductivity types of the bonding surfaces become identical, and directly bonding them by annealing. CONSTITUTION: The respective LED's of red, green, and blue are formed. The following are directly bonded by annealing; a P-GaN contact layer 26 of the blue LED and a P-GaP substrate 10 of the green LED, and an N-GaP layer 12 of the green LED and an N-Ga0.3 Al0.7 As contact layer 5 of the red LED. Step-differences are formed on the N-GaP layer 12, the P-GaN contact layer 26 and an N-GaN contact layer 22 by etching. An electrode 51, an electrode 52, an electrode 53 and an electrode 54 are formed. By controlling the forward biases applied between the electrodes 51 and 52, the electrodes 52 and 53, and the electrodes 53, 54, trichromatic light can be emitted from the same part, with arbitrary intensity, so that full color can be obtained from a smaller area.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a visible light LED device and a method for manufacturing the same, and more particularly, it can emit light of three primary colors of blue, green and red respectively from the same location of the LED device formed on one chip. The present invention relates to a visible light LED device capable of emitting intense light and a method for manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, a single LED is used as a single color red, green,
Those that emit blue light respectively are commercially available. If you try to emit other colors using these three primary colors, light will be emitted from each LED.
Multicoloring has been performed by devising an optical system to collect and use the light of the above three colors at one place or by arranging the respective elements on the same plane to emit light. However, in the case of producing a multicolor light output screen or the like using the above three colors of light, it has been difficult to form these LEDs with high density.

Further, there has been a conventional technique for growing a semiconductor crystal for emitting a plurality of colors on a common substrate.
This is because the crystal structure of each crystal to be grown and the growth conditions are limited in order to perform crystal growth on a common substrate.

[0004]

As described above, red, green,
In the conventional one that emits each blue light by a single LED, when trying to emit other colors by using the LEDs of these three primary colors, the optical system is devised and the above three colors of light are emitted in one place. Was collected or used, or the respective devices were arranged on the same surface to emit light. However, when a multicolor screen or the like is formed by this, there is a problem that it is difficult to form the light emitting portions that become pixels in a two-dimensional manner with high density.

Further, when crystals of respective LEDs of three primary colors are to be grown on a common substrate by using the same crystal growth method or individual growth methods, the crystal structure of each crystal emitting the three primary colors, Also, it was very difficult to grow the crystals emitting the above three colors on the common substrate due to the large difference in the growth conditions. In particular, GaP that grows blue LED crystals and green LED or red LED crystals
There is a problem that it cannot grow on the substrate.

The present invention has been made to solve the above problems, and it is possible to emit light of the three primary colors of red, green and blue from the same location in the same direction, and to emit each color with arbitrary intensity. An object of the present invention is to provide a visible light LED device and a manufacturing method thereof.

[0007]

A method of manufacturing a visible light LED device according to the present invention (claim 1) is a method of manufacturing a visible light LED device, wherein a blue LED for growing a crystal of an LED emitting blue light is grown. Growth step, green LED growing step of growing LED crystal emitting green light, red LED growing growing crystal of LED emitting red light
It includes a growth step and a step of directly bonding the three grown LEDs by annealing to integrate them.

A visible light LED according to the present invention (claim 2)
The manufacturing method of the device is, in the method of manufacturing a visible light LED device, a blue LED growth step of growing a crystal of an LED that emits blue light, and a crystal of an LED that emits green light and red light. Then, a green and red LED growing step of stacking two color LEDs is performed, and a step of directly bonding the grown blue LED and the green and red LEDs by annealing to integrate them.

The present invention (claim 3) is based on the visible light LE.
In the method for manufacturing a D device (claim 1), the blue LE
The D growth step is to sequentially grow a first conductivity type crystal and a second conductivity type crystal on a blue LED substrate,
The green LED growing step is to sequentially grow a second conductivity type crystal and a first conductivity type crystal on a second conductivity type substrate for the green LED, and the red LED growth step is for the red LED A second conductivity type crystal and a first conductivity type crystal are sequentially grown on a second conductivity type substrate, and the integrating step is performed by the growth surface of the grown blue LED crystal and the green LED substrate. And the growth surface of the crystal of the green LED and the growth surface of the crystal of the grown red LED are directly bonded by annealing, and further, after the bonding, the red LED, the green LED, and the blue LED Etching a desired region to provide steps for forming the above-mentioned three LED electrodes on each exposed surface, the steps, and red L
And a step of forming an electrode on the substrate surface of the ED.

The present invention (claim 4) provides the visible light LE as described above.
In the method for manufacturing a D device (claim 1), the blue LE
The D growth step is to sequentially grow a first conductivity type crystal and a second conductivity type crystal on a blue LED substrate,
The green LED growing step is to sequentially grow a second conductivity type crystal and a first conductivity type crystal on a second conductivity type substrate for the green LED, and the red LED growth step is for the red LED A second conductivity type crystal and a first conductivity type crystal are sequentially grown on a second conductivity type substrate, and the integrating step is performed by the growth surface of the grown blue LED crystal and the green LED substrate. And directly adhering the growing surface of the green LED crystal and the growing surface of the grown red LED crystal by annealing, and further, after the adhering, removing the substrate for the red LED. A step for forming electrodes for the three LEDs on each exposed surface by etching desired regions of the red, green and blue LEDs. It is intended to include a step of forming an electrode on the surface of each step, and the second conductive type crystal substrate is the red LED removed.

The present invention (claim 5) provides the visible light LE as described above.
In the method for manufacturing a D device (claim 1), the blue LE
The D growth step is to sequentially grow a first conductivity type crystal and a second conductivity type crystal on a blue LED substrate,
The green LED growing step is a step of sequentially growing a first conductivity type crystal and a second conductivity type crystal on a first conductivity type substrate for a green LED, and the red LED growth step is a step for growing a red LED. A second-conductivity-type crystal and a first-conductivity-type crystal are sequentially grown on a second-conductivity-type substrate, and the step of integrating the two is such that the crystal growth surface of the grown blue LED and the grown green LED are The step of directly adhering the crystal growth surface by annealing, and the step of adhering the green L
The method includes a step of removing the substrate for ED, and a step of directly adhering the surface of the green LED crystal from which the substrate has been removed and the growth surface of the grown red LED crystal by annealing, and further after the adhering, The step of removing the substrate for the red LED, the red LED, the green LED, and the blue L
Etching a desired region of the ED to form steps for forming the electrodes for the three LEDs on the exposed surfaces, and the steps of the steps and the substrate of the red LED with the substrate removed. And a step of forming an electrode on the surface of the two-conductivity type crystal.

The present invention (claim 6) provides the visible light LE as described above.
In the method for manufacturing a D device (claim 2), the blue LE
The D growth step is to sequentially grow a first conductivity type crystal and a second conductivity type crystal on a blue LED substrate,
In the green and red LED growth process, the pn of the green LED is formed on the common second conductivity type substrate for the green and red LEDs.
A second conductive type crystal forming a bonding surface, a first conductive type crystal, and subsequently, together with the first conductive type crystal, a red LE
The second conductivity type crystal forming the pn junction surface of D is continuously grown in one step, and the step of integrating is performed in the step of integrating the grown surface of the grown blue LED crystal with the green color, and A common substrate for a red LED is directly bonded by annealing, and after the bonding, desired regions of the green and red LEDs and the blue LED are etched to form the above-described structure on each exposed surface. It includes a step of forming steps for forming electrodes for three LEDs and a step of forming electrodes on the steps and the crystal surface of the red LED.

The present invention (claim 7) provides the visible light LE as described above.
In the method for manufacturing a D device (claim 2), the blue LE
The D growth step is for growing a first conductivity type crystal and a second conductivity type crystal on a blue LED substrate, and the green and red LED growth steps are green and red LE.
A second conductivity type crystal forming a pn junction surface of a red LED and a first conductivity type crystal on a common substrate for D, and subsequently, together with the first conductivity type crystal, forming a pn junction surface of a green LED; It is carried out in one step of continuously growing two-conductivity-type crystals, and the step of integrating the two is such that the grown surface of the grown blue LED crystal and the grown surface of the second-conductivity-type crystal of the green LED. Are directly bonded by annealing, and further, after the bonding, a step of removing the common substrate for the green and red LEDs, and etching desired regions of the green and red LEDs and the blue LED. Accordingly, a step of forming steps for forming the electrodes for the three LEDs on each exposed surface, and the step of forming the steps and the red substrate L on which the common substrate is removed
And a step of forming an electrode on the crystal surface of the ED.

The present invention (claim 8) provides the visible light LE as described above.
In the method for manufacturing a D device (claim 2), the blue LE
The D growth step is to sequentially grow a first conductivity type crystal and a second conductivity type crystal on a blue LED substrate,
In the green and red LED growth step, a selection mask is formed in a region including a region where the first electrode is formed on the common second conductivity type substrate for the green and red LEDs, and this is used as a mask. Second, forming the pn junction surface of the green LED
A conductive type crystal and a first conductive type crystal are continuously grown,
A selective mask is formed in a region including a region where the second electrode is formed on the first conductivity type crystal, and the pn junction surface of the red LED is formed together with the first conductivity type crystal using the selection mask as a mask. This is a step of growing a two-conductivity-type crystal, and the step of integrating the two is to directly bond the growth surface of the grown blue LED crystal and the common substrate for the green and red LEDs by annealing. After the adhesion, the surface of the second conductivity type crystal of the red LED, the area for forming the first electrode, the area for forming the second electrode, and the common area for the green and red LEDs. Etching the substrate and a desired region of the blue LED to form an electrode on the exposed region of the first conductivity type crystal of the blue LED, respectively.

The present invention (claim 9) is based on the visible light LE.
In the method for manufacturing a D device (claim 2), the blue LE
The D growth step is to sequentially grow a first conductivity type crystal and a second conductivity type crystal on a blue LED substrate,
In the green and red LED growth step, first, an insulating film is formed on the common second conductivity type substrate for the green and red LEDs, and the <11/1> direction [[11/1] direction is included. An opening formed by a line including a line in a direction equivalent to this] is provided. The line direction <11 /
1> and [11/1] are

[0016]

[Equation 1]

In the above description, <> and [] in this specification indicate a bar. After forming the opening, the common substrate is etched through the opening, and a second conductivity type crystal that forms a pn junction surface of the green LED by using the insulating film as a mask in a region cut by the etching, and First conductivity type crystal, and subsequently, together with the first conductivity type crystal, pn of red LED
A step of continuously growing a second conductivity type crystal forming a bonding surface, removing the insulating film, and forming each crystal so as to be exposed on the same surface as the substrate. The step of performing is a step of directly bonding the growth surface of the grown blue LED crystal and the common substrate for the green and red LEDs by annealing, and further, after the bonding, the second conductivity of the red LED. Surface of the type crystal, the surface of the first conductivity type crystal of the green and red LEDs, the surface of the second conductivity type crystal of the green LED, the common substrate for the green and red LEDs, and the blue LED By etching the desired area, the exposed blue LED first
And a step of forming electrodes on the conductive type crystal region.

The present invention (claim 10) provides the visible light L
In the method of manufacturing an ED device, the steps of integrating the above are:
The method includes a step of forming a compound semiconductor film containing In on at least one of the surfaces to be directly bonded, and a step of directly bonding the surfaces to each other by annealing.

The present invention (claim 11) provides the visible light L
In the method for manufacturing an ED device (claim 3), the blue L
In the ED growth process, Ga of the blue LED is formed on the sapphire substrate.
N buffer layer, n-GaN contact layer, n-AlGa
N-clad layer, p-InGaN active layer, p-AlGaN
The clad layer and the p-GaN contact layer are sequentially grown, and the green LED growth step is p-Ga.
P-GaP layer of green LED and n-GaP on P substrate
The layers are sequentially grown, and the red LED growth step is performed by p-GaAl of the red LEDs on the p-GaAs substrate.
As cladding layer, p-GaAlAs active layer, n-GaA
The 1 clad layer and the n-GaAlAs contact layer are sequentially grown.

The present invention (claim 12) provides the visible light L
In the method for manufacturing an ED device (claim 4), the blue L
In the ED growth process, Ga of the blue LED is formed on the sapphire substrate.
N buffer layer, n-GaN contact layer, n-AlGa
N-clad layer, p-InGaN active layer, p-AlGaN
A clad layer and a p-GaN contact layer are grown, and the green LED growth step is to grow a p-GaP layer and a n-GaP layer of the green LED on a p-GaP substrate. Red LED growth process is p
-The p-GaAlAs buffer layer of the red LED, the p-GaAlAs cladding layer, and the p-GaAlA on the GaAs substrate
s active layer, n-GaAl clad layer, and n-GaAl
The As contact layer is grown.

The present invention (claim 13) provides the visible light L
In the method for manufacturing an ED device (claim 5), the blue L
In the ED growth process, Ga of the blue LED is formed on the sapphire substrate.
N buffer layer, n-GaN contact layer, n-AlGa
N-clad layer, p-InGaN active layer, p-AlGaN
The clad layer and the p-GaN contact layer are sequentially grown, and the green LED growth step is performed using n-Ga.
N-GaP layer of green LED and p-GaP on P substrate
The layers are sequentially grown, and the red LED growth step is performed by p-GaAl of the red LEDs on the p-GaAs substrate.
As buffer layer, p-GaAlAs clad layer, p-G
aAlAs active layer, n-GaAl cladding layer, and n-
The GaAlAs contact layer is sequentially grown.

The present invention (claim 14) provides the visible light L
In the method for manufacturing an ED device (claim 6), the blue L
In the ED growth process, Ga of the blue LED is formed on the sapphire substrate.
N buffer layer, n-GaN contact layer, n-AlGa
N-clad layer, p-InGaN active layer, p-AlGaN
A clad layer and a p-GaN contact layer are sequentially grown. In the green and red LED growth step, a p-GaP layer forming a pn junction surface of a green LED on a p-GaP common substrate, and n. This is carried out in one step in which the -GaP layer and subsequently the p-GaP layer forming the pn junction surface of the red LED together with the n-GaP layer are continuously grown.

The present invention (claim 15) provides the visible light L
In the method for manufacturing an ED device (claim 7), the blue L
In the ED growth process, Ga of the blue LED is formed on the sapphire substrate.
N buffer layer, n-GaN contact layer, n-AlGa
N-clad layer, p-InGaN active layer, p-AlGaN
A clad layer and a p-GaN contact layer are sequentially grown. In the green and red LED growth step, a p-GaP layer for forming a pn junction surface of a red LED on a p-GaP common substrate, and n. This is carried out in one step in which the -GaP layer and subsequently the p-GaP layer that forms the pn junction surface of the green LED together with the n-GaP layer are continuously grown.

The present invention (claim 16) provides the visible light L
In the method for manufacturing an ED device (claim 8), the blue L
In the ED growth process, Ga of the blue LED is formed on the sapphire substrate.
N buffer layer, n-GaN contact layer, n-AlGa
N-clad layer, p-InGaN active layer, p-AlGaN
A clad layer and a p-GaN contact layer are sequentially grown. In the green and red LED growth step, a selective mask is formed on a p-GaP common substrate including a region for forming a first electrode. Then, using this as a mask, a p-GaP layer for forming a pn junction surface of the green LED,
And n-GaP layers are grown continuously,
A selective mask is formed in a region including a region where the second electrode is formed on the layer, and using this as a mask, p-GaP that forms the pn junction surface of the red LED together with the n-GaP layer is formed.
This is the step of growing the layer.

The present invention (claim 17) provides the visible light L
In the method for manufacturing an ED device (claim 9), the blue L
In the ED growth process, Ga of the blue LED is formed on the sapphire substrate.
N buffer layer, n-GaN contact layer, n-AlGa
N-clad layer, p-InGaN active layer, p-AlGaN
A clad layer and a p-GaN contact layer are sequentially grown. In the green and red LED growth steps, an insulating film is first formed on a p-GaP common substrate,
An opening formed by a line including a line in the <11/1> direction [a direction equivalent to this including the [11/1] direction] is provided, the common substrate is etched by the opening, and the common substrate is cut by the etching. P-GaP for forming a pn junction surface of a green LED by using the insulating film as a mask in a closed region
Layer, an n-GaP layer, and subsequently a p-GaP layer forming a pn junction surface of a red LED together with the n-GaP layer are continuously grown, and then the insulating film is removed to remove each crystal. Is a step of forming so as to be exposed on the same surface as the substrate.

Visible light LE according to the present invention (claim 18)
Device D is a blue L containing a semiconductor crystal that emits blue light.
Green LE including ED and semiconductor crystal that emits green light
Red LED including D and a semiconductor crystal that emits red light
And three LEDs are directly bonded and integrated by annealing.

Visible light LE according to the present invention (claim 19)
Device D is a blue L containing a semiconductor crystal that emits blue light.
Two-color LE, green and red, including an ED, a semiconductor crystal that emits green light, and a semiconductor crystal that emits red light
D and D are directly bonded and integrated by annealing.

The present invention (claim 20) provides the visible light L
In the ED device (claim 18), the blue LED is
A first conductivity type crystal and a second conductivity type crystal are sequentially formed on a substrate for a blue LED.
Is one in which a second conductivity type crystal and a first conductivity type crystal are sequentially formed on a second conductivity type substrate for a green LED,
The red LED is one in which a second conductivity type crystal and a first conductivity type crystal are sequentially formed on a second conductivity type substrate for the red LED, and the growth surface of the blue LED is the green LE.
The growth surface of the green LED is directly adhered to the growth surface of the red LED on the second conductivity type substrate of D, and the electrode for the red LED is on the surface of the second conductivity type substrate of the red LED. The green LED and the common electrode of the red LED are exposed by removing respective crystals of the red LED and a desired portion of the second conductivity type substrate for the red LED. The common electrodes of the blue LED and the green LED, which are formed in the region of the mold crystal, have the respective crystals of the green LED and the green LED.
Is formed in the region of the second conductivity type crystal of the blue LED exposed by removing a desired portion of the second conductivity type substrate for the blue LED, and the electrode for the blue LED is the second conductivity type crystal of the blue LED. The blue L exposed by removing at least the region reaching the first conductivity type crystal of the blue LED
It is formed in the region of the first conductivity type crystal of the ED.

The present invention (claim 21) provides the visible light L
In the ED device (claim 18), the blue LED is
A first conductivity type crystal and a second conductivity type crystal are sequentially formed on a substrate for a blue LED.
Is one in which a second conductivity type crystal and a first conductivity type crystal are sequentially formed on a second conductivity type substrate for a green LED,
The red LED is one in which a second conductivity type crystal and a first conductivity type crystal are sequentially formed on a second conductivity type substrate for the red LED, and the growth surface of the blue LED is the green LE.
The second LED substrate of D and the growth surface of the green LED are directly bonded to the growth surface of the red LED by annealing, and the electrode for the red LED removes the second LED substrate of the red LED. The red L exposed by
Green LED formed on the surface of the second conductivity type crystal of ED,
And the common electrode of the red LED is exposed by removing a desired portion of each crystal of the red LED.
A blue LED formed in the region of the first conductivity type crystal of the ED,
And a common electrode of the green LED is formed on each crystal of the green LED and a region of the second conductivity type crystal of the blue LED exposed by removing a desired portion of the second conductivity type substrate for the green LED. , The electrode for the blue LED has at least the second conductivity type crystal of the blue LED as the blue LE.
It is formed in the region of the first conductivity type crystal of the blue LED which is exposed by removing up to the region of D of the first conductivity type crystal.

The present invention (claim 22) provides the visible light L
In the ED device (claim 19), the blue LED is
A first conductivity type crystal and a second conductivity type crystal are sequentially formed on a substrate for a blue LED.
Is a first conductivity type crystal and a second conductivity type crystal sequentially formed on a first conductivity type substrate for a green LED,
The red LED is one in which a second conductivity type crystal and a first conductivity type crystal are sequentially formed on a second conductivity type substrate for the red LED, and the growth surface of the blue LED is the green LE.
The first conductivity type crystal of the green LED, which is directly bonded to the growth surface of D by annealing and is exposed by removing the first conductivity type substrate for the green LED, is directly bonded to the growth surface of the red LED by annealing. And red LED
Electrode is formed on the surface of the second conductivity type crystal of the red LED exposed by removing the second conductivity type substrate of the red LED, and the common electrode of the green LED and the red LED is A common electrode of the blue LED and the green LED is formed on the exposed region of the first conductivity type crystal of the green LED by removing a desired part of each crystal, and a common electrode of the blue LED and the green LED forms a desired part of each crystal of the green LED. The electrode for the blue LED, which is formed on the region of the second conductivity type crystal of the blue LED exposed by the removal, is the blue LE.
The second conductivity type crystal of D is at least the first of the blue LED
It is formed in the region of the first conductivity type crystal of the blue LED exposed by removing the region reaching the conductivity type crystal.

The present invention (claim 23) is based on the visible light L
In the ED device (claim 19), the blue LED is
A first conductivity type crystal and a second conductivity type crystal are sequentially formed on a blue LED substrate, and the green and red LEDs are a common second conductivity type substrate for the green and red LEDs. A second conductivity type crystal forming a pn junction surface of the green LED, a first conductivity type crystal, and a second conductivity type crystal forming a pn junction surface of the red LED together with the first conductivity type crystal. It is formed sequentially, and the blue L
The growth surface of the ED is directly bonded to the common second conductivity type substrate of the green and red LEDs by annealing, and the electrode for the red LED is formed on the surface of the second conductivity type crystal of the red LED. , And a common electrode of the red LED is formed in a region of the first conductivity type crystal common to the green and red LEDs, which is exposed by removing a desired portion of the second conductivity type crystal of the red LED. , And the common electrode of the green LED is the above green and red LED
The electrode for the blue LED is formed in the region of the second conductivity type crystal of the green LED exposed by removing the desired portion of the common first conductivity type crystal, and the electrode for the blue LED is the second electrode of the green LED.
Of the blue LED exposed by removing the conductivity type crystal, the second conductivity type substrate of the green LED, and the second conductivity type crystal of the blue LED to at least the region reaching the first conductivity type crystal of the blue LED; It is formed in the region of the first conductivity type crystal.

The present invention (claim 24) provides the visible light L
In the ED device (claim 19), the blue LED is
A first conductivity type crystal and a second conductivity type crystal are sequentially formed on a blue LED substrate, and the green and red LEDs are a common second conductivity type substrate for the green and red LEDs. A second conductivity type crystal forming a pn junction surface of a red LED, a first conductivity type crystal, and a second conductivity type crystal forming a pn junction surface of a green LED together with the first conductivity type crystal. It is formed sequentially, and the blue L
The growth surface of the ED is directly bonded to the growth surfaces of the green and red LEDs by annealing, and the electrodes for the red LEDs are exposed by removing the common substrate of the green and red LEDs. The green and red LEDs are formed on the surface of the second conductivity type crystal and the common electrodes of the green and red LEDs are exposed by removing a desired portion of the second conductivity type crystal of the red LED.
A blue LED formed on a common first conductivity type crystal region,
The common electrodes of the green and green LEDs are the green and red LEs described above.
D The electrode for blue LED is formed in the region of the second conductivity type crystal of the green LED exposed by removing a desired portion of the common first conductivity type crystal, and the electrode for the blue LED is the second conductivity type crystal of the green LED. , And a part of the second-conductivity-type crystal of the blue LED is removed by removing at least a region reaching the first-conductivity-type crystal of the blue LED, thereby exposing the region of the first-conductivity-type crystal of the blue LED. It has been formed.

The present invention (claim 25) provides the visible light L
In the ED device (claim 19), the blue LED is
A first conductivity type crystal and a second conductivity type crystal are sequentially formed on a blue LED substrate, and the green and red LEDs are a common second conductivity type substrate for the green and red LEDs. A second conductivity type crystal forming a pn junction surface of the green LED and a first conductivity type crystal are formed in the first region above, and the p of the red LED is further formed together with the first conductivity type crystal.
The second conductivity type crystal forming the n-junction surface is formed in the second region on the first conductivity type crystal, and the blue L
The growth surface of the ED is directly bonded to the common substrate of the green and red LEDs by annealing, and the electrode for the red LED is formed on the surface of the second conductivity type crystal of the red LED. Common electrode is formed in a region on the first and second conductivity type crystals of the green and red LEDs excluding the second region.
Common electrode of the green and red LED common second
Formed on a region of the conductivity type substrate other than the first region,
The blue LED is exposed by removing a part of the second conductivity type crystal of the blue LED until at least the first conductivity type crystal of the blue LED is reached.
Is formed in the region of the first conductivity type crystal.

The present invention (claim 26) provides the visible light L
In the ED device (claim 19), the blue LED is
A first-conductivity-type crystal and a second-conductivity-type crystal are sequentially formed on a substrate for a blue LED, and at least one inner wall surface of the green and red LEDs is spread upward. Green with a shaped recess on its surface,
And in the recess of the common substrate of the second conductivity type of the red LED,
The second conductivity type crystal forming the pn junction surface of the green LED, the first conductivity type crystal, and the second conductivity type crystal forming the pn junction surface of the red LED together with the first conductivity type crystal are described above. The second conductivity type crystal of the green LED and the first conductivity type crystal of the green and red LEDs are exposed on the same surface as the upper surface of the second conductivity type crystal of the red LED above the inner wall surface of the recess. The three crystal surfaces are formed to be flat, the growth surface of the blue LED is directly bonded to the common substrate of the green and red LEDs by annealing, and the electrode for the red LED is the red electrode. LED
Is formed on the surface of the second conductivity type crystal, and the common electrodes of the green LED and the red LED are the green and red LEDs described above.
Of the first conductivity type crystal is formed on the exposed surface area, and the common electrode of the blue LED and the green LED is the green LE.
D second conductivity type crystal is formed in the exposed surface region,
The blue LED is exposed by removing a part of the second conductivity type crystal of the blue LED until at least the first conductivity type crystal of the blue LED is reached.
Is formed in the region of the first conductivity type crystal.

The present invention (claim 27) provides the visible light L
In the ED device, a compound semiconductor film containing In is formed on at least one of the surfaces to which the above LEDs are directly bonded by annealing.

The present invention (claim 28) provides the visible light L
In the ED device (claim 20), the blue LED is
Blue LED GaN buffer layer on sapphire substrate, n
-GaN contact layer, n-AlGaN cladding layer, p
An InGaN active layer, a p-AlGaN cladding layer, and a p-GaN contact layer are sequentially formed,
The green LED is a green LED p on a p-GaP substrate.
-GaP layer and n-GaP layer are sequentially formed, and the red LED has a red L color on a p-GaAs substrate.
ED p-GaAlAs cladding layer, p-GaAlAs
Active layer, n-GaAl clad layer, and n-GaAlA
The s contact layer is sequentially formed.

The present invention (claim 29) provides the visible light L
In the ED device (claim 21), the blue LED is
Blue LED GaN buffer layer on sapphire substrate, n
-GaN contact layer, n-AlGaN cladding layer, p
An InGaN active layer, a p-AlGaN cladding layer, and a p-GaN contact layer are sequentially formed,
The green LED is a green LED p on a p-GaP substrate.
-GaP layer and n-GaP layer are sequentially formed, and the red LED has a red L color on a p-GaAs substrate.
ED p-GaAlAs buffer layer, p-GaAlAs
The clad layer, the p-GaAlAs active layer, the n-GaAl clad layer, and the n-GaAlAs contact layer are sequentially formed.

The present invention (claim 30) provides the visible light L
In the ED device (claim 22), the blue LED is
Blue LED GaN buffer layer on sapphire substrate, n
-GaN contact layer, n-AlGaN cladding layer, p
An InGaN active layer, a p-AlGaN cladding layer, and a p-GaN contact layer are sequentially formed,
The green LED is a green LED on the n-GaP substrate.
A -GaP layer and a p-GaP layer are sequentially formed, and the red LED has a red L color on a p-GaAs substrate.
ED p-GaAlAs buffer layer, p-GaAlAs
The clad layer, the p-GaAlAs active layer, the n-GaAl clad layer, and the n-GaAlAs contact layer are sequentially formed.

The present invention (claim 31) provides the visible light L
In the ED device (claim 23), the blue LED is
Blue LED GaN buffer layer on sapphire substrate, n
-GaN contact layer, n-AlGaN cladding layer, p
An InGaN active layer, a p-AlGaN cladding layer, and a p-GaN contact layer are sequentially formed,
The green and red LEDs are a p-GaP layer forming a pn junction surface of the green LED on the p-GaP common substrate, an n-GaP layer, and subsequently, a pn junction surface of the red LED together with the n-GaP layer. The p-GaP layers forming the are sequentially formed.

The present invention (claim 32) provides the visible light L
In the ED device (claim 24), the blue LED is
Blue LED GaN buffer layer on sapphire substrate, n
-GaN contact layer, n-AlGaN cladding layer, p
An InGaN active layer, a p-AlGaN cladding layer, and a p-GaN contact layer are sequentially formed,
The green and red LEDs are a p-GaP layer forming a pn junction surface of a red LED on a p-GaP common substrate, an n-GaP layer, and subsequently, a pn junction surface of the green LED together with the n-GaP layer. The p-GaP layers forming the are sequentially formed.

The present invention (claim 33) provides the visible light L
In the ED device (claim 25), the blue LED is
Blue LED GaN buffer layer on sapphire substrate, n
-GaN contact layer, n-AlGaN cladding layer, p
An InGaN active layer, a p-AlGaN cladding layer, and a p-GaN contact layer are sequentially formed,
The green and red LEDs are p-types that form a pn junction surface of the green LEDs in the first region on the p-GaP common substrate.
A GaP layer and an n-GaP layer are formed, and the n-
The p-GaP layer forming the pn junction surface of the red LED together with the GaP layer is formed in the second region on the n-GaP layer.

The present invention (claim 34) is based on the visible light L
In the ED device (claim 26), the blue LED is
Blue LED GaN buffer layer on sapphire substrate, n
-GaN contact layer, n-AlGaN cladding layer, p
An InGaN active layer, a p-AlGaN cladding layer, and a p-GaN contact layer are sequentially formed,
The green and red LEDs have a green LE in the recess of the p-GaP common substrate in which the surface of at least one inner wall surface has a recess in which the surface is expanded upward.
P-GaP layer forming a pn junction surface of D, and n-Ga
P layer, and then the n-GaP layer together with red LE
The p-GaP layer forming the pn junction surface of D is the green L
ED p-GaP layer and the green and red LED n-
The GaP layer and the red LED are above the inner wall surface of the recess.
Is exposed on the same surface as the upper surface of the p-GaP layer, and the three crystal surfaces are flattened.

[0043]

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment 1. Configuration 1. The visible light LED device according to the first embodiment is
A blue LED (30 including a semiconductor crystal that emits blue light)
0) and a green LE containing a semiconductor crystal that emits green light.
Three LEs of D (200, 211) and a red LED (100, 111) containing a semiconductor crystal that emits red light.
Since D is directly bonded and integrated by annealing, it is possible to emit light of three colors at an arbitrary intensity at the same location.

Structure 2. Visible light L in the first embodiment
A method of manufacturing an ED device includes a blue LED growth step of growing crystals (21 to 26) of an LED that emits blue light,
Green LED growth process for growing LED crystals (11, 12) that emits green light and LE that emits red light
This includes a step of growing a red LED for growing crystals (2 to 5) of D, and a step of directly bonding the above-grown three LEDs by annealing to integrate them.
Visible light L that can emit colored light with arbitrary intensity
An ED device can be obtained.

Structure 3. Visible light L in the first embodiment
As shown in FIG. 1, the manufacturing method of the ED device is as follows.
In the ED growth step, the first conductivity type crystals (22, 23) and the second conductivity type crystals (24 to 2) are formed on the blue LED substrate 20.
6) is sequentially grown, and in the green LED growing step, the second conductivity type crystal (11) and the first conductivity type crystal (12) are formed on the second conductivity type substrate (10) for the green LED. In the red LED growing step, the second conductivity type crystal (2, 3) and the first conductivity type crystal (4,5) are formed on the second conductivity type substrate (1) for red LED. Are sequentially grown, and the step of integrating the above includes the growth surface of the crystal of the grown blue LED and the green LED.
And a substrate (10) for use, and the growth surface of the crystal of the green LED and the growth surface of the crystal of the grown red LED are directly bonded by annealing, and after the bonding, the red LED and the green are bonded. By etching the desired areas of the LED and the blue LED, the electrodes (53, 53, 5) for the above three LEDs are formed on each exposed surface.
4) The step of forming a step for forming the step and the step of forming the electrodes (51 to 54) on each of the steps and the substrate surface of the red LED are included. It is possible to obtain a visible light LED device that can be made to emit light by, and whose emission intensity of each light can be controlled by the four electrodes (51 to 54).

Structure 4. Visible light L in the first embodiment
As shown in FIG. 2, the manufacturing method of the ED device is as follows.
The ED growth process is performed on the substrate (20) for the blue LED.
Conductivity type crystal, (22, 23) and second conductivity type crystal (24
To 26) are sequentially grown, and the green LED
In the growing step, the second conductivity type crystal (11) and the first conductivity type crystal (1) are formed on the second conductivity type substrate (10) for the green LED.
2) are sequentially grown, and the red LED growing step is performed by performing a second step on the second conductivity type substrate (1) for the red LED.
Conductivity type crystal (7, 2, 3), and first conductivity type crystal (4,
5) is sequentially grown, and the step of integrating the steps includes forming the grown surface of the blue LED crystal and the substrate (10) for the green LED, and the grown surface of the green LED crystal. A method of directly bonding the grown surface of the grown red LED crystal by annealing, and further, after the bonding, a step of removing the substrate (1) for the red LED, the red LED, the green LED, and the blue color. LE
By etching a desired region of D, the electrodes (53, 5) for the above three LEDs are formed on each exposed surface.
3, 54), and a step of forming electrodes (51 to 54) on the surface of the second conductivity type crystal (7) of the red LED from which the steps and the substrate are removed. Since it includes and, it is possible to emit light of three colors at the same location with arbitrary intensity, and the emission intensity of each light can be controlled by four electrodes, and a visible light LED device with high electrode formation accuracy. Can be obtained.

Structure 5. Visible light L in the first embodiment
As shown in FIGS. 3 and 4, the manufacturing method of the ED device is as follows. In the blue LED growth step, the first conductivity type crystals (22, 23) and the second conductivity type crystals are formed on the blue LED substrate (20). (24 to 26) are sequentially grown, and the green LED growing step is performed by the first conductivity type substrate (1
3) A first conductivity type crystal (12) and a second conductivity type crystal (11) are sequentially grown on the red LED.
In the growing step, the second conductivity type crystals (7, 2, 3) and the first conductivity type crystals (4,5) are sequentially grown on the second conductivity type substrate (1) for red LED, The integrating step includes a step of directly adhering the grown surface of the grown blue LED crystal and the grown surface of the grown green LED crystal by annealing, and after the adhering, the green LE.
The step of removing the substrate (13) for D, the surface of the green LED crystal from which the substrate has been removed, and the above grown red LED
The step of directly adhering the crystal growth surface to the crystal growth surface by annealing, further removing the substrate (6) for the red LED after the adhering, and the red LED and the green LE.
The step of forming steps for forming the electrodes (53, 53, 54) for the three LEDs on each exposed surface by etching desired areas of the D and blue LEDs, and the steps, And a step of forming electrodes (51 to 54) on the surface of the second conductivity type crystal of the red LED from which the substrate has been removed. Therefore, it is possible to emit light of three colors at an arbitrary intensity at the same location. Moreover, the emission intensity of each light can be controlled by the four electrodes, and a visible light LED device with high electrode formation accuracy can be obtained.

Example 1. FIG. 1 is a schematic cross-sectional view showing each step of the method for manufacturing a visible light LED device according to the first embodiment of the present invention. After growing on the substrate of each LE
D is heated and pressure-bonded, and electrodes are formed on this to form LEDs of three primary colors in one chip.

The manufacturing method will be described below. First,
Form a red LED. That is, the red LE shown in FIG. 1 (a)
As shown in the schematic sectional view of D, p with a thickness of about 300 μm or less
-LPE (Liquid Phase Epitaxy) on GaAs substrate 1
Liquid phase epitaxy) or MOCVD (Metal Or
ganic Chemical Vapor Deposition) method, MBE (Mole
cular Beam Epitaxy method was used to obtain a p- with a film thickness of 2 μm and a carrier concentration of 1 × 10 ¹⁸ cm ⁻³ .
Ga _0.2 Al _0.8 As clad layer 2, film thickness 0.1 μm,
Undoped p-Ga with carrier concentration of 1 × 10 ¹⁷ cm ⁻³
_0.65 Al _0.35 As active layer 3, film thickness 2 μm, carrier concentration 1 × 10 ¹⁸ cm ⁻³ n-Ga _0.2 Al _0.8 As clad layer 4, and film thickness 1 μm, carrier concentration 1 × 10 ¹⁸ cm
Sequentially growing an n-Ga _0.3 Al _0.7 As contact layer 5 ^-3, to form the red LED 100.

Next, a green LED is formed. That is, FIG.
As shown in the schematic sectional view of the green LED in (b), the thickness 30
A p-GaP substrate 10 having a thickness of 2 μm and a carrier concentration of 1 × 10 ¹⁸ cm ⁻³ is formed on the p-GaP substrate 10 having a thickness of 0 μm or less by using the LPE method.
-GaP layer 11, film thickness 2 μm, carrier concentration 1 × 10 ¹⁸
The cm ⁻³ n-GaP layer 12 is sequentially grown to form a green LED.

Next, a blue LED is formed, that is, as shown in FIG.
As shown in the schematic cross section of the blue LED shown in (c), the thickness 30
Using a MOCVD method on the sapphire substrate 20 of about 0 μm or less, a buffer layer 21 made of GaN having a film thickness of 500 Å, a film thickness of 1 μm, a carrier concentration of 1 × 1.
0 ¹⁸ cm ⁻³ n-GaN contact layer 22, film thickness 0.5
μm, carrier concentration 1 × 10 ¹⁸ cm ⁻³ n-Al _0.15 G
a _0.85 N clad layer 23, p-In _0.06 Ga _0.94 N active layer 24 having a film thickness of 200 Å, film thickness 0.5 μ
m, carrier concentration 1 × 10 ¹⁸ cm ⁻³ p-Al _0.15 Ga
_0.85 N cladding layer 25, film thickness 1 μm, carrier concentration 1 ×
After the 10 ¹⁸ cm ⁻³ p-GaN contact layer 26 was sequentially grown, it was annealed at 700 ° C. in an N ₂ atmosphere to obtain blue LE.
Form D.

After the crystal growth of the LEDs emitting red, green and blue, respectively, is performed as described above, the surface treatment is performed by a wet treatment with ammonia, concentrated sulfuric acid or the like, followed by washing with water and drying. Then, the p-GaN contact layer 26 of the blue LED is formed.
And green LED p-GaP substrate 10, green LED n-
GaP layer 12 and n-Ga _0.3 Al _0.7 As of red LED
The contact layer 5 is directly overlapped with the red LED p-G.
Apply a load of about 30 g / cm ² on the aAs substrate 1 and
Each LED is annealed for 1 hour in H ₂ atmosphere at 00 ° C.
After crimping, each LED was further crimped by annealing for 1 hour in N ₂ atmosphere at 700 ° C.
As shown in FIG.
And green LED p-GaP substrate 10, green LED n-
GaP layer 12 and n-Ga _0.3 Al _0.7 As of red LED
The one bonded to the contact layer 5 is prepared.

Then, using the usual photolithographic technique and etching technique, as shown in FIG. 1 (e), the n-GaP layer 1 is formed.
2, a step is provided in each layer of the p-GaN contact layer 26 and the n-GaN contact layer 22, and an electrode is formed on the terrace of each step to manufacture a visible light LED device.

In this Example 1, there are eight possible combinations of the conductivity types of the layers shown in FIGS. 1 (a) to 1 (c), but the two combinations in which the directly bonded layers have the same conductivity type will be described below. A structure having four electrodes can be used as shown in the embodiment. However, in the structure of FIG. 1 (d), it is necessary to arrange LEDs emitting blue, green, and red light from the side closer to the sapphire substrate. Although the sapphire substrate is used as the substrate for the blue LED in the first embodiment, it may be any substrate that does not absorb visible light and can grow the GaN layer.

The operation of the above manufactured LED will be described. For example, when emitting red light, a forward bias is applied between the electrodes 51 and 52. When emitting purple light, the electrodes 51 and 52, and the electrodes 53 and 5 are used.
A forward bias is applied to 4 and 4, respectively. In this way, by applying a required amount of forward bias to the electrodes corresponding to the LEDs of each of the three colors, which are necessary for developing the desired color, the light of the desired color is emitted from the direction of the sapphire substrate. You can take it out.

Next, the operation will be described. Example 1
Then, the red, green, and blue LEDs formed separately are stacked so that the bonding surfaces have the same conductivity type, and are directly bonded by annealing.
It is possible to obtain a visible light LED device capable of emitting colored light with an arbitrary intensity, and thus capable of emitting full color. Further, since the adhesive surfaces are configured to have the same conductivity type, the electrodes for controlling the emission intensity of the three colors can be controlled by four electrodes.

As described above, in the first embodiment of the present invention, red,
The green LED and the blue LED are respectively formed as described above, and the p-GaN contact layer 26 and the green LE of the blue LED are formed.
P-GaP substrate 10 of D, n-GaP layer 1 of green LED
2 and the n-Ga _{0. 3} Al _0.7 As contact layer 5 of the red LED directly bonded by annealing, then n-GaP layer 12 by etching, p-GaN contact layer 26,
Since a step is provided in each layer of the n-GaN contact layer 22 and the electrode 51, the electrode 52, the electrode 53, and the electrode 54 are provided,
By controlling the amount of forward bias applied between the electrode 51 and the electrode 52, the electrode 52 and the electrode 53, and the electrode 53 and the electrode 54, three colors can be emitted from the same location with arbitrary intensities. It is possible to obtain a visible light LED device capable of developing a full color in a small area and integrating the light emitting portions to be pixels with a high density.

Example 2. FIG. 2 is a schematic cross-sectional view showing a method for manufacturing a visible light LED device according to a second embodiment of the present invention. In the second embodiment, a buffer layer is formed after growing a red LED crystal, and then, The crystals of Example 1 are sequentially grown, and the substrate for the red LED is removed after the bonding step.

In each LED forming method, the blue and green LEDs are formed in the same manner as in the first embodiment. As shown in FIG. 2 (a), the red LED is formed by growing the p-Ga _0.35 Al _0.65 As buffer layer 7 on the p-GaAs substrate 1 by the LPE method, the MOCVD method or the MBE method. ,
Then, as in Example 1 above, p-Ga _0.2 Al _0.8 A
s clad layer 2, p-Ga _0.65 Al _0.35 As active layer 3,
n-Ga _0.2 Al _0.8 As cladding layer 4, n-Ga _0.3
Red LED by sequentially growing Al _0.7 As contact layer 5
110 is formed.

Next, as described in the first embodiment, the blue LED
P-GaN contact layer 26 and green LED p-Ga
P substrate 10, green LED n-GaP layer 12 and red LE
After directly bonding the n-Ga _0.3 Al _0.7 As contact layer 5 of D, p using an ammonia-based selective etching solution
-The GaAs substrate 1 is removed, and the crystal 111 of the red LED is left. After that, as shown in FIG. 2B, an electrode 51, an electrode 52, an electrode 53 and an electrode 54 are formed to manufacture a visible light LED device.

Next, the operation of the second embodiment will be described. In the first embodiment, there are 6 steps in total for forming electrodes.
It is more than 00 μm, which is almost red LED
This is due to the thickness of the substrate 1 of 1 and the substrate 10 of the green LED. N-GaP layer 1 which is an electrode forming layer having a thickness of several μm
2, the p-GaN contact layer 26 and the n-GaN contact layer 22 are etched by about 300 μm in the process of etching each layer.
Since it is necessary to etch the substrate 1 and the substrate 10 having a large thickness of m, it is difficult to control etching conditions when forming electrodes. In addition, the presence of a substrate layer that is not directly related to operation in the structure of the manufactured device reduces the luminous efficiency of the device. Therefore, in the second embodiment, in the process of forming the red LED, p-Ga _0.35 Al is formed on the p-GaAs substrate 1.
_{A 0.65} As buffer layer 7 is formed, and then, similarly to Example 1, p-Ga _0.2 Al _0.8 As clad layer 2 and p-Ga are formed.
_0.65 Al _0.35 As active layer 3, n-Ga _0.2 Al _0.8 As
The clad layer 4 and the n-Ga _0.3 Al _0.7 As contact layer 5 were grown. As a result, after the bonding process, p-GaAs
Since only the substrate 1 can be easily removed, the thickness of the crystal to be etched can be reduced in the etching step for forming the step for forming the electrode, and the accuracy in the etching step can be improved. be able to.

As described above, in the second embodiment of the present invention, the blue L
The ED and the green LED are formed in the same manner as in Example 1, and the red LED is formed of p-Ga _0.35 Al on the p-GaAs substrate 1.
_0.65 As buffer layer _{7, p-Ga 0.2 Al 0.8} As cladding layer _{2, p-Ga 0.65 Al 0.} 35 As active layer 3, n-G
a _0.2 Al _0.8 As clad layer 4, n-Ga _0.3 Al _{0.
7 After the} As contact layer 5 is grown and formed in sequence,
Similar to Example 1, p-GaN contact layer 26 for blue LED, p-GaP substrate 10 for green LED, n-GaP layer 12 for green LED and n-Ga _0.3 Al _{0.7 for} red LED.
As contact layer 5 is directly overlaid and adhered, and p-G
After removing the aAs substrate 1, n-Ga is formed by etching.
A step is provided in each of the P layer 12, the p-GaN contact layer 26, and the n-GaN contact layer 22, and the electrode 51 and the electrode 5 are formed.
2, since the electrode 53 and the electrode 54 are provided,
In addition to the above effect, at the time of etching for forming the electrode, the thickness of the crystal to be scraped by etching becomes thinner as compared with the case of manufacturing by the manufacturing method of Example 1 because the substrate for the red LED is removed. Therefore, n-GaP
The accuracy of etching up to the layer 12 can be improved.

Example 3. FIG. 3 is a schematic sectional view showing each step of the method for manufacturing a visible light LED device according to the third embodiment, and FIG. 4 is a schematic sectional view of the visible light LED device manufactured according to the third embodiment. The third embodiment is green LE.
In the process of forming D, the order of growing crystals is changed to that shown in Examples 1 and 2 to obtain green L
The ED substrate is also removed.

In the method of forming each LED, the blue LED
Is formed in the same manner as in the first embodiment, and the red LED is formed in the same manner as in the second embodiment.

In the method of forming the green LED, as shown in FIG.
As shown in FIG. 3, the n-GaP layer 12 and the p-GaP layer 11 are sequentially grown on the n-GaP substrate 13 by the LPE method to form the green LED 210. Then ammonia,
After surface treatment by wet treatment with concentrated sulfuric acid, washing with water and drying, p-GaP layer 11 and blue L of the green LED
The p-GaN contact layer 26 of the ED is annealed in a H ₂ atmosphere at 700 ° and directly bonded as shown in FIG. 3 (b), and then the n-GaP substrate 13 is ground to 100 μm.
After the thickness is reduced to m, the n-GaP substrate 13 is removed by etching to the n-GaP layer 12 to obtain a green LED crystal 210 as shown in FIG. 3C. After that, FIG.
n-GaP layer 12 and red LE on the surface of the crystal shown in (c)
The n-Ga _0.3 Al _0.7 As contact layer 5 of D was further annealed in a H ₂ atmosphere at 700 ° and directly bonded as shown in FIG. 3D, and then annealed in an N ₂ atmosphere.
Thereafter, the p-GaAs substrate 1 is removed in the same manner as in Example 2 to leave the red LED crystal 111, and the integrated crystals are obtained as shown in FIG. 3 (e). The integrated element thus formed is provided with a step by etching to form an electrode, thereby completing the visible light LED device as shown in FIG.

Next, the operation of the third embodiment will be described. As described in the operation of the second embodiment, the step for forming the electrode is almost the substrate 1 of the green LED and the red LED.
This is due to the thickness of 0. In the third embodiment, the green LED
By reversing the order of the crystals grown in the growing step of Example 1 or 2 above, it becomes possible to remove the n-GaP substrate 13 which is the substrate for the green LED, and as in Example 2. By growing a crystal of a red LED on the p-GaAs substrate 1 which is a substrate for the red LED
Can also be removed. As a result, in addition to the effect of the first or second embodiment, the thickness of the crystal to be cut during the etching for forming the electrode can be further reduced, and the accuracy at the time of forming the electrode can be improved.

As described above, in the third embodiment of the present invention, the blue L
The ED is formed by growing the red LED in the same manner as in the second embodiment, and the green LED is formed by the n-GaP substrate 13 in the same manner as in the second embodiment.
After the n-GaP layer 12 and the p-GaP layer 11 are sequentially grown and formed thereon, the p-GaP layer 11 of this green LED is formed.
And the p-GaN contact layer 26 of the blue LED are bonded, the n-GaP substrate 13 of the green LED is removed, the n-GaP layer 12 of the green LED and the contact layer 5 of the red LED are bonded, and then the red Since the p-GaAs substrate 1 of the LED has been removed, the p-GaAs substrate 1, n-
Since the GaP substrate 13 is not included, the device can be formed to have a smaller thickness than that of the first or second embodiment.
Alternatively, in addition to the effect of 2, the n-GaP layer 12 and the p-
The accuracy when etching up to the GaN contact layer 26 can be improved.

Embodiment 2. Configuration 1. The visible light LED device according to the second embodiment is
A blue LED (30 including a semiconductor crystal that emits blue light)
0), a two-color LE of green and red containing a semiconductor crystal that emits green light and a semiconductor crystal that emits red light.
D (220, 221, 222, or 231) is
Since it is directly bonded and integrated by annealing,
It is possible to emit light of three colors at the same location with arbitrary intensity.

Structure 2. Visible light L in the second embodiment
A method of manufacturing an ED device includes a blue LED growth step of growing crystals (21 to 26) of an LED that emits blue light,
LED crystals that emit green and red light (1
1, 12, 14) are respectively grown to stack LEDs of two colors, green and red LED growth step, and the grown blue LED (300) and green and red LEDs.
(220, 221, 222, or 230) is directly bonded by annealing to form a unit,
It is possible to obtain a visible light LED device that can emit light of three colors at the same location with arbitrary intensity.

Structure 3. Visible light L in the second embodiment
As shown in FIG. 5, the manufacturing method of the ED device is as follows.
The ED growth process is performed on the substrate (20) for the blue LED.
Conductivity type crystals (22, 23), and second conductivity type crystals (24
To 26) are sequentially grown, and the green and red LED growth step is performed by forming a pn junction surface of the green LED on the common second conductivity type substrate (10) for the green and red LEDs. A second-conductivity-type crystal (11), a first-conductivity-type crystal (12), and a second-conductivity-type crystal (14) that forms a pn junction surface of a red LED together with the first-conductivity-type crystal (12). It is carried out in one step of continuously growing, and the step of integrating the above is performed by the above-mentioned grown blue L
The ED crystal growth surface and the common substrate (10) for the green and red LEDs are directly bonded by annealing, and after the bonding, the green and red LEDs are bonded.
(220) and a step of forming a step for forming the electrodes (52, 53, 54) for the three LEDs on each exposed surface by etching desired regions of the blue LED (300) And the step of forming the electrodes (51 to 54) on the steps and the crystal surface of the red LED, light of three colors can be emitted at an arbitrary intensity at the same location, and the light of each light can be emitted. A visible light LED device whose emission intensity can be controlled by the four electrodes (51 to 54) can be manufactured by simplifying the bonding process.

Structure 4. Visible light L in the second embodiment
As shown in FIG. 6, the manufacturing method of the ED device is as follows.
The ED growth process is performed on the substrate (20) for the blue LED.
Conductivity type crystals (22, 23), and second conductivity type crystals (24
To 26) are sequentially grown, and in the green and red LED growth step, the pn junction surface of the red LED is formed on the common second conductivity type substrate (10) for the green and red LEDs. A second conductivity type crystal (14), a first conductivity type crystal (12), and a second conductivity type crystal (11) forming a pn junction plane of a green LED together with the first conductivity type crystal (12). It is carried out in one step of continuously growing, and the step of integrating the above is performed by the above-mentioned grown blue L
The growth surface of the ED crystal and the growth surface of the second conductivity type crystal of the green LED are directly bonded by annealing, and after the bonding, the common substrate (10) for the green and red LEDs is attached. In order to form the electrodes (52, 53, 54) for the three LEDs on each exposed surface, by removing and the desired regions of the green and red LEDs and the blue LED are etched. And a step (5 to 5) of electrodes (51 to 5) on the crystal surface of the red LED from which the steps and the common substrate are removed.
4) is included, light of three colors can be emitted at an arbitrary intensity at the same place, and the emission intensity of each light can be controlled by the four electrodes (51 to 54). The visible light LED device can be accurately formed while simplifying the bonding process.

Structure 5. Visible light L in the second embodiment
As shown in FIG. 7, the manufacturing method of the ED device is as follows.
The ED growth process is performed on the substrate (20) for the blue LED.
Conductivity type crystals (22, 23), and second conductivity type crystals (24
To 26) are sequentially grown, and the green and red LED growing step forms the first electrode (53) on the common second conductivity type substrate (10) for the green and red LEDs. Forming a selection mask (30) on the region including the region,
Using this as a mask, the second conductivity type crystal (11) and the first conductivity type crystal (1) that form the pn junction surface of the green LED
2) is continuously grown, and the first conductivity type crystal (12)
A selective mask (31) is formed in a region including a region where the second electrode (52) is to be formed, and using this as a mask, the pn junction surface of the red LED is formed together with the first conductivity type crystal (12). This is a step of growing the second conductivity type crystal (14) to be formed, and the step of integrating is performed with the growth surface of the grown blue LED crystal and the common substrate (10) for the green and red LEDs. Is directly bonded by annealing, and after the bonding, the surface of the second conductivity type crystal (12) of the red LED, a region for forming the first electrode (53), and the second electrode. (52) forming area, and the common substrate (1
0) and a desired region of the blue LED (300) are etched to form electrodes (51 to 54) on the exposed region of the first conductivity type crystal (22) of the blue LED, respectively. Therefore, a visible light LED device capable of emitting light of three colors at an arbitrary intensity at an arbitrary intensity and controlling the emission intensity of each light with four electrodes (51 to 54) is provided in the bonding step, Also, the manufacturing process can be simplified.

Structure 6. Visible light L in the second embodiment
As shown in FIG. 8, the manufacturing method of the ED device is as follows.
The ED growth process is performed on the substrate (20) for the blue LED.
Conductivity type crystals (22, 23), and second conductivity type crystals (24
To 26) are sequentially grown. In the green and red LED growth step, first, the insulating film (3) is formed on the common second conductivity type substrate (10) for the green and red LEDs.
2) is formed and an opening formed by a line including a line in the <11/1> direction [direction equivalent to this including the [11/1] direction] is provided, and the common substrate (1
0) is etched, and the insulating film (32) is used as a mask in the region scraped by the etching to p the green LED.
a second conductivity type crystal (11) forming an n-junction surface, and a first
The second conductivity type crystal (14) forming the pn junction surface of the red LED is continuously grown together with the first conductivity type crystal (12) and then the first conductivity type crystal (12), and then the insulating film is formed. (32) is removed, and each of the above crystals becomes a substrate (1
0), which is formed so as to be exposed on the same surface as that of 0), and the integrating step is performed by the grown blue LED.
Is a step of directly adhering the growth surface of the crystal and the common substrate (10) for the green and red LEDs by annealing, and further, after the adhering, the surface of the second conductivity type crystal (14) of the red LED. The surface of the first conductivity type crystal (12) of the green and red LEDs, and the second surface of the green LED of the second type.
Surface of conductivity type crystal (11) and the above green and red LE
By etching a desired region of the D common substrate (10) and the blue LED (300), electrodes (51 to 54) are respectively formed on the exposed regions of the first conductivity type crystal (22) of the blue LED. A visible light LED, which includes a step of forming, can emit light of three colors to the same place with arbitrary intensity, and can control the emission intensity of each light with four electrodes (51 to 54). The device can be manufactured by simplifying the bonding process and the etching process.
Three of the electrodes can be formed on the same plane.

Example 4. FIG. 5 is a schematic cross-sectional view showing each step of the method for manufacturing a visible light LED device according to the fourth embodiment of the present invention. In the fourth embodiment, green and red LEDs are sequentially formed on a common substrate. is there.

The blue LED is formed as in the first embodiment.
The green and red LEDs are PG as shown in Fig. 5 (a).
Zn-doped p on the aP substrate 10 using the LPE method
(Zn doped) -GaP layer 11, n-GaP layer 12, ZnO
The p (ZnO doped) -GaP layer 14 doped with is sequentially grown to form green and red LEDs 220. The green and red LEDs thus formed emit green light between the p-GaP layer 11 and the n-GaP layer 12,
The red light is emitted between the -GaP layer 12 and the p-GaP layer 14.

After the green and red LEDs are formed as described above, surface treatment is carried out, and after washing with water and drying, the p-GaP substrate 10 for the green and red LEDs and the p-for the blue LED are formed.
The GaN contact layer 26 is directly laminated and annealed, and is bonded as shown in FIG. 5 (b). As shown in FIG. 5C, the element integrally formed as described above is formed by using an ordinary photoresist and etching technique, as shown in FIG. 5 (c).
Steps are provided in the GaP layer 11 and the n-GaN contact layer 22, and electrodes are formed on the terraces of each step.

Next, the operation of the fourth embodiment will be described. In the fourth embodiment, the green and red LEDs are grown on the p-GaP substrate 10, which is a common substrate, by p-G.
Since the aP layer 11, the n-GaP layer 12, and the p-GaP layer 14 are sequentially grown in one step, the red L
ED growth process can be shortened, and red LED and green LE are available.
The step of adhering to D can be omitted, and further, it can be formed without using the substrate for the red LED.

As described above, in the fourth embodiment of the present invention, the blue L
The ED is formed in the same manner as in Example 1, and green and red LEs are used.
D is the p (Zn doped) -GaP layer 1 on the p-GaP substrate 10.
1, n-GaP layer 12, p (ZnO doped) -GaP layer 14
Since it was formed by sequentially growing, the formation process of the red LED can be shortened, and the red LED and the green LED can be shortened.
It is possible to omit the step of adhering to and to obtain a visible light LED device that does not include a red LED substrate in the formed element.

Example 5. FIG. 6 is a schematic cross-sectional view showing each step of the method for manufacturing a visible light LED device according to the fifth embodiment of the present invention. In this fifth embodiment, each layer of the green and red LEDs shown in the fourth embodiment is By changing the growth order of, the common substrate can be removed after the bonding step, and the device can be formed to be thinner.

The blue LED is formed as in the first embodiment.
In Example 4, the crystal for the red LED was grown on the crystal for the green LED, but in Example 5, the LPE method was used on the p-GaP common substrate 10 as shown in FIG. 6 (a). , P (ZnO doped) -Ga forming pn junction surface of red LED
P layer 14, n-GaP layer 12, and this n-GaP layer 1
2 together with p (Zn that forms the pn junction surface of the green LED
doped) -GaP layer 11 is sequentially grown to produce green and red L
After obtaining ED230, which was surface-treated, washed with water, and dried, p-GaP layer 11 for this green LED and blue LE
The p-GaN contact layer 26 of D is directly laminated and annealed, and bonded as shown in FIG. 6 (b). Then, as shown in Fig. 6 (c), the green and red LEDs on the surface
After removing the p-GaP substrate 10 which is a common substrate for use and leaving the green and red LED crystals 231 in FIG.
, The n-GaP layer 12, the p-GaP layer 11, n
A step is provided on the GaN contact layer 22 to form the electrodes 51 to 54.

Next, the operation of the fifth embodiment will be described. In the fifth embodiment, the steps of growing the green and red LEDs are performed on the p-GaP substrate 10 which is a common substrate in the reverse order of the above-described fourth embodiment.
2, the p-GaP substrate 11 is formed by one step of sequentially growing the p-GaP layer 11.
It is possible to remove 0, and it is possible to reduce the thickness of the crystal to be cut in the etching process for forming the step for forming the electrode. Here, the thickness that needs to be removed by etching when forming the electrode is the p-GaP cladding layer 1 on the surface.
4 to n-GaN contact layer 22 thickness of several tens of μm
It will be better in the part.

As described above, in the fifth embodiment of the present invention, blue L
The ED is formed in the same manner as in Example 1, and has green and red LEDs
Is the p-GaP layer 14, n-Ga on the p-GaP substrate 10.
The P layer 12 and the p-GaP layer 11 are sequentially grown, and the green color,
And the p-GaP layer 11 of the red LED 230 and the blue LED
The p-GaN contact layer 26 of
Since the p-GaP substrate 10, which is the red LED common substrate, is removed, and then a step is provided in the layer forming each electrode and the electrode is formed on the terrace of this step, in addition to the effect of the fourth embodiment, The thickness of the crystal that is etched in the etching step when forming the electrode can be reduced, and the etching accuracy when forming the electrode can be improved.

Example 6. FIG. 7 is a schematic cross-sectional view showing each step of the method of manufacturing a visible light LED device according to the sixth embodiment of the present invention. It is intended to simplify the process of growing and etching the provided green and red LED crystals.

The manufacturing method of the blue LED is the same as that of the first embodiment. The manufacturing method of green and red LED is green,
On the p-GaP substrate 10, which is a common substrate for the red LED and the red LED, an electrode 5 is formed in a later step by using a normal photoresist technique.
As shown in Fig. 7 (a), S is sputtered in the area where 3 is formed.
The iO ₂ film 30 is formed in a stripe shape, and p of the green LED is formed.
p-GaP layer 11 and n-GaP layer 1 forming an n-junction surface
2 is grown continuously. Next, once again, the SiO ₂ film 31
Is deposited to form a stripe as shown in FIG. 7 (b), and then the pn of the red LED is formed together with the n-GaP layer 12.
The p-GaP layer 14 forming the bonding surface is grown to form the green and red LEDs 221. SiO ₂ film 30 is HF
Then, the p-GaN contact layer 26 of the blue LED crystal-grown on the sapphire substrate 20 and the p-GaP substrate 10 which is the common substrate of the green and red LEDs are annealed as described in the fourth embodiment. To bond directly. After that, using the normal photoresist technology, as shown in FIG.
n-GaN contact layer 22 of blue LED as shown in (c)
A step is formed on the substrate and the electrodes 51 to 54 are formed as in the above embodiment.

Next, the operation of the sixth embodiment will be described. In this embodiment, since the step for forming the electrode is formed by using the selection mask in the step of growing the green and red LEDs, the step forming step by etching can be simplified.

As described above, in the sixth embodiment of the present invention, blue L
The ED is formed in the same manner as in Example 1, and has green and red LEDs
Is a p-GaP layer 11, an n-GaP layer 11 formed by forming an SiO ₂ film serving as a selective mask in a stripe shape on the p-GaP substrate 10.
After the layer 12 was continuously grown, another SiO ₂ film was vapor-deposited to form a stripe having an opening at a portion where the p-GaP layer 14 was grown, and the p-GaP layer 14 was grown. In addition to the effect of 4, it is possible to reduce the etching process for providing the step for forming the electrode and to simplify the manufacturing process.

Example 7. FIG. 8 is a schematic cross-sectional view showing each step of the method for manufacturing a visible light LED device according to the seventh embodiment of the present invention. This embodiment 7 shows three of four electrodes for controlling the emission intensity of each LED. Electrodes 51 to 5 which are electrodes
3 is formed on the same plane as the surface of the common substrate of the green and red LEDs.

The manufacturing method of the blue LED is the same as that of the first embodiment. Green and red LEDs are p-GaP substrate 1
SiO that is formed by lines whose stripe direction is the [11/1] direction by using a normal photoresist technique
_{2 The} film 32 is deposited by sputtering, and the p-GaP substrate 10 is etched using this as a mask as shown in FIG. 8 (a).

On the p-GaP substrate 10 in the region cut by this etching process, the SiO ₂ film 32 is used as a mask as shown in FIG. 8B, and the LPE method or the VP method is used.
Using the E method, the p (Zn doped) -GaP layer 11, the n-GaP layer 12, and the p (ZnO doped) -GaP layer 14 are sequentially grown.
Then, the SiO ₂ film 32 is removed by HF, and then the p-GaN contact layer 26 of the blue LED crystal-grown on the sapphire substrate 20 and the p-G are formed as described in the fourth embodiment.
The aP substrate 10 is directly bonded by annealing as shown in FIG. 8 (c). After that, a step is formed in the n-GaN contact layer 22 of the blue LED by using a normal photoresist technique, and as shown in FIG. 8 (d), p (ZnO doped) -GaP is formed.
Layer 14, n-GaP layer 12, p (Zn doped) -GaP layer 1
The electrodes 5 are provided on the 1, and n-GaN contact layers 22, respectively.
1 to 54 are formed.

Next, the operation of the seventh embodiment will be described. In this embodiment, a mask formed by lines having stripe directions of [11/1] is provided on the p-GaP substrate 10, and the p-GaP substrate 10 is etched using this as a mask. As a result, the p-GaP substrate 10 is etched in a regular mesa shape. Further, in the etched region, the p-GaP layer 11, the n-GaP layer 12, the p-
When the GaP layer 14 is sequentially grown, each crystal grows along the wall surface of the etched region as shown in FIG. 8 (b), so that the end of each crystal is in the same plane as the surface of the p-GaP substrate 10. It is formed so as to be exposed above. By forming an electrode on each crystal exposed on the same plane in this way, the electrode can be formed on the same plane, and the step of providing a step for forming an electrode as in the above-described embodiment can be reduced.

As described above, in Example 7 of the present invention, blue L
The ED is formed in the same manner as in Example 1, and has green and red LEDs
Forms a SiO ₂ film 31 formed by lines in the [11/1] direction on the p-GaP substrate 10, uses this as a mask to etch the p-GaP substrate 10, and then p
(Zn doped) -GaP layer 11, n-GaP layer 12, p (ZnO
doped) -GaP layer 14 is sequentially grown, and then Si
The O ₂ film 31 is removed, the p-GaN contact layer 26 of the blue LED and the p-GaP substrate 10 are bonded by annealing, and a step is formed in the n-GaN contact layer 22 to form p (ZnO 2).
doped) -GaP layer 14, n-GaP layer 12, p (Zn do
ped) -GaP layer 11 and n-GaN contact layer 22
Since the electrodes 51 to 54 are respectively formed on the
1 to 53 can be formed on the same plane, the step of providing a step for forming the electrode can be simplified, and the manufacturing process can be simplified. Further, a visible light LED device in which three electrodes are formed on the same plane can be obtained.

Third Embodiment Configuration 1. The visible light LED device according to the third embodiment is
As shown in FIG. 9, a compound semiconductor film (8, 27) containing In is formed on at least one of the surfaces to which the above LEDs are directly bonded by annealing,
As a result, it is possible to improve the adhesion of the bonding surface that bonds the LEDs.

Structure 2. Visible light L in the third embodiment
As shown in FIG. 9, the manufacturing method of the ED device includes a step of forming the above-mentioned integrated step, a step of forming a compound semiconductor film (8, 27) containing In on at least one of the surfaces to be directly bonded, and a step of forming the above-mentioned surfaces. This includes a step of directly bonding by annealing, which makes it possible to obtain a visible light LED device having high adhesiveness on the bonding surface for bonding each LED.

Example 8. FIG. 9 is a schematic cross-sectional view showing a method for manufacturing a visible light LED device according to an eighth embodiment of the present invention. In the eighth embodiment, a thin layer containing In is formed on at least one of the bonding surfaces, and the layer is Bonding is performed through. This will be described using the structure of the first embodiment.

In the process of forming the red LED, Example 1 was used.
A crystal is grown in the same manner as in the above, and subsequently, n- in FIG.
On the GaAlAs contact layer 5, a few atomic layers thick n-I
An n _x Ga _0.3-x Al _0.7 As layer (0 <x <0.3) 8 is grown.

Further, in the process of forming the blue LED, the crystal was grown in the same manner as in Example 1, and further, the process was performed as shown in FIG.
On the p-GaN contact layer 26 of
An In _y Ga _1-y N layer (0 <y <0.5) 27 is grown. These red and blue LEDs and the green LED produced as described in Example 1 are annealed and bonded in the same manner as shown in Example 1.

Next, the operation of the eighth embodiment will be described. When the LEDs formed as described above are bonded by annealing, a structure having crystals containing In is formed on the bonding surface. Due to the mass transport action of In contained therein, atoms on the bonding surface are likely to move directly, so that bonding of each crystal can be made more reliable. In this case, the inclusion of In reduces the band gap of the adhesive surface,
Since the film thickness is as thin as several atomic layers, almost no light is absorbed and the device characteristics are not affected.

As described above, in Example 8, since the layer containing In was formed on at least one of the bonding surfaces and the layers were bonded by annealing, it is possible to improve the adhesiveness between the layers to be bonded. In the eighth embodiment, the case of the bonding in the first embodiment is described, but in other embodiments, the same effect can be obtained even if the layer containing In is formed on at least one of the surfaces to be bonded. It is what is done.

[Brief description of drawings]

FIG. 1 is a visible light LED according to a first embodiment of the present invention.
Sectional drawing which shows the manufacturing process of an apparatus.

FIG. 2 is a visible light LED according to a second embodiment of the present invention.
Sectional drawing which shows the manufacturing process of an apparatus.

FIG. 3 is a visible light LED according to a third embodiment of the present invention.
Sectional drawing which shows the manufacturing process of an apparatus.

FIG. 4 is a visible light LED according to a third embodiment of the present invention.
Sectional drawing which shows an apparatus.

FIG. 5 is a visible light LED according to a fourth embodiment of the present invention.
Sectional drawing which shows the manufacturing process of an apparatus.

FIG. 6 is a visible light LED according to a fifth embodiment of the present invention.
Sectional drawing which shows the manufacturing process of an apparatus.

FIG. 7 is a visible light LED according to a sixth embodiment of the present invention.
Sectional drawing which shows the manufacturing process of an apparatus.

FIG. 8 is a visible light LED according to a seventh embodiment of the present invention.
Sectional drawing which shows the manufacturing process of an apparatus.

FIG. 9 is a visible light LED showing an eighth embodiment of the present invention.
It is sectional drawing which shows the manufacturing process of an apparatus.

[Explanation of symbols]

1 p-GaAs substrate, 2 p-GaAlAs cladding layer, 3 p-GaAlAs active layer, 4 n-GaAl cladding layer, 5 n-GaAlAs contact layer, 7 p
-GaAlAs buffer layer, 8n-InGaAlAs
Layer, 10 p-GaP substrate, 11 p-GaP layer, 12
n-GaP layer, 13 n-GaP substrate, 14 p (ZnO
doped) -GaP layer, 20 sapphire substrate, 21 Ga
N buffer layer, 22 n-GaN contact layer, 23
n-AlGaN cladding layer, 24p-InGaN active layer, 25p-AlGaN cladding layer, 26p-Ga
N contact layer, 27 p-InGaN layer, 30 Si
O ₂ film, 31 SiO ₂ film, 51, 52, 53, 54
Electrode, 100,110 red LED, 111 red LE
Crystal of D, 200,210 Green LED, 220,22
1, 222, 230 green and red LEDs, 231, green and red LED crystals, 300 blue LEDs.

Claims (34)

[Claims] 1. A method for manufacturing a visible light LED device, comprising: blue LE for growing a crystal of an LED emitting blue light.
D growth process and green LE to grow LED crystals that emit green light
D growth process and red LE for growing LED crystals that emit red light
Visible light L characterized by including a D growth step and a step of directly bonding the three grown LEDs by annealing to integrate them.
ED device manufacturing method. 2. A method for manufacturing a visible light LED device, wherein a blue LE for growing a crystal of an LED that emits blue light is grown.
D growth step, growing green and red light emitting LED crystals respectively to stack two color LEDs, green and red LED growth step, and the grown blue LED and green And a step of directly adhering the red LED and the red LED by annealing so as to be integrated, and a method for manufacturing a visible light LED device. 3. The method for manufacturing a visible light LED device according to claim 1, wherein in the blue LED growth step, a first conductivity type crystal and a second conductivity type crystal are sequentially grown on a blue LED substrate. In the green LED growth step, a second conductivity type crystal and a first conductivity type crystal are sequentially grown on a second conductivity type substrate for green LED, and the red LED growth step is red. A second conductivity type crystal and a first conductivity type crystal are sequentially grown on a second conductivity type substrate for an LED, and the step of integrating the two is a growth surface of the grown blue LED crystal and the green color. The substrate for LED and the growth surface of the crystal of the green LED and the growth surface of the crystal of the grown red LED are directly bonded by annealing, and after the bonding, the red LED and the green LE are bonded together.
D, and a step of forming a step for forming the electrodes for the three LEDs on each exposed surface by etching a desired area of the blue LED, and the step and the substrate surface of the red LED on each step. A method of manufacturing a visible light LED device, comprising the step of forming an electrode. 4. The method for manufacturing a visible light LED device according to claim 1, wherein in the blue LED growth step, a first conductivity type crystal and a second conductivity type crystal are sequentially grown on a blue LED substrate. In the green LED growth step, a second conductivity type crystal and a first conductivity type crystal are sequentially grown on a second conductivity type substrate for green LED, and the red LED growth step is red. A second conductivity type crystal and a first conductivity type crystal are sequentially grown on a second conductivity type substrate for an LED, and the step of integrating the two is a growth surface of the grown blue LED crystal and the green color. The substrate for LED and the growth surface of the crystal of the green LED and the growth surface of the crystal of the grown red LED are directly bonded by annealing, and further, after the bonding, the substrate for the red LED is And a step of forming a step for forming electrodes for the three LEDs on each exposed surface by etching desired regions of the red LED, the green LED, and the blue LED, And a step of forming an electrode on the surface of the second conductivity type crystal of the red LED from which each step and the substrate have been removed, the method for manufacturing a visible light LED device. 5. The method for manufacturing a visible light LED device according to claim 1, wherein in the blue LED growing step, a first conductivity type crystal and a second conductivity type crystal are sequentially grown on a blue LED substrate. The green LED growing step is for sequentially growing a first conductivity type crystal and a second conductivity type crystal on a first conductivity type substrate for a green LED, and the red LED growth step is for red color. A second conductivity type crystal and a first conductivity type crystal are sequentially grown on a second conductivity type substrate for an LED. The step of integrating the two is the growth surface of the grown blue LED crystal and the growth. Directly adhering the grown green LED crystal growth surface by annealing, removing the green LED substrate after the adhering, and growing the green LED crystal surface from which the substrate has been removed. red A step of directly bonding the growth surface of the LED crystal by annealing, and further, after the bonding, a step of removing the substrate for the red LED, and a desired region of the red LED, the green LED, and the blue LED. By etching, the above three LEs are formed on each exposed surface.
And a step of forming a step for forming an electrode for D, and a step of forming an electrode on the surface of the second conductivity type crystal of the red LED from which the step and the substrate are removed. Method for manufacturing visible light LED device. 6. The method for manufacturing a visible light LED device according to claim 2, wherein in the blue LED growing step, a first conductivity type crystal and a second conductivity type crystal are sequentially grown on a blue LED substrate. In the green and red LED growth step, the pn of the green LED is formed on the common second conductivity type substrate for the green and red LEDs.
A second conductive type crystal forming a bonding surface, a first conductive type crystal, and subsequently, together with the first conductive type crystal, a red LE
The second conductivity type crystal forming the pn junction surface of D is continuously grown in one step, and the step of integrating is performed by the growth surface of the grown blue LED crystal and the green color, and A common substrate for red LEDs is directly bonded by annealing, and further, after the bonding, the green and red LEDs and the blue LE.
Etching a desired region of D to form steps on the exposed surfaces for forming the electrodes for the three LEDs, and forming electrodes on the steps and on the crystal surface of the red LED. A method of manufacturing a visible light LED device, comprising: 7. The method for manufacturing a visible light LED device according to claim 2, wherein in the blue LED growing step, a first conductivity type crystal and a second conductivity type crystal are grown on a blue LED substrate. In the green and red LED growth step, a second conductivity type crystal that forms a pn junction surface of the red LED on the common substrate for the green and red LEDs, and a first conductivity type crystal, and then the The second conductivity type crystal forming the pn junction surface of the green LED is continuously grown together with the first conductivity type crystal in one step, and the integrated step is the grown blue LED crystal. And a growth surface of the second conductivity type crystal of the green LED are directly bonded by annealing, and further, after the bonding, a step of removing the common substrate for the green and red LEDs, Etching the desired regions of the green and red LEDs and the blue LED to provide steps for forming the electrodes for the three LEDs on the exposed surfaces, and the steps and Red LED with common substrate removed
And a step of forming an electrode on the surface of the crystal, the method for manufacturing a visible light LED device. 8. The method for manufacturing a visible light LED device according to claim 2, wherein in the blue LED growth step, a first conductivity type crystal and a second conductivity type crystal are sequentially grown on a blue LED substrate. In the green and red LED growing step, a selective mask is formed in a region including a region for forming the first electrode on the common second conductivity type substrate for the green and red LEDs. The pn junction surface of the green LED with the mask as the second
A conductive type crystal and a first conductive type crystal are continuously grown,
A selective mask is formed in a region including a region where the second electrode is formed on the first conductivity type crystal, and the pn junction surface of the red LED is formed together with the first conductivity type crystal using the selection mask as a mask. In the step of growing a two-conductivity-type crystal, the step of integrating the two is to directly bond the growth surface of the grown blue LED crystal and the common substrate for the green and red LEDs by annealing. After the adhesion, the surface of the second conductivity type crystal of the red LED,
An exposed blue LED is formed by etching a region in which the first electrode is formed, a region in which the second electrode is formed, a common substrate for the green and red LEDs, and a desired region of the blue LED. And a step of forming electrodes on the first conductivity type crystal region and the method, respectively. 9. The method for manufacturing a visible light LED device according to claim 2, wherein in the blue LED growth step, a first conductivity type crystal and a second conductivity type crystal are sequentially grown on a blue LED substrate. In the green and red LED growth step, an insulating film is first formed on a common second conductivity type substrate for the green and red LEDs, and the <11/1> direction [[11/1 ], And an opening formed by a line including a line] is provided, the common substrate is etched by the opening, and the insulating film is used as a mask in the region cut by the etching to obtain a green color. A second conductivity type crystal forming a pn junction surface of an LED, a first conductivity type crystal, and subsequently, a second conductivity type crystal forming a pn junction surface of a red LED together with the first conductivity type crystal. I grew it up , The step of forming the crystal so that each of the crystals is exposed on the same surface as the substrate by removing the insulating film, and the step of integrating is the growth surface of the crystal of the grown blue LED, This is a step of directly bonding the common substrate for the green and red LEDs by annealing, and further, after the bonding, the surface of the second conductivity type crystal of the red LED and the first conductivity type crystal of the green and red LEDs. The surface of the green LED, the surface of the second conductivity type crystal of the green LED, the common substrate for the green and red LEDs, and the desired region of the blue LED are etched to expose the exposed blue L
A method of manufacturing a visible light LED device, comprising: forming electrodes on a region of the first conductivity type crystal of the ED; 10. The method for manufacturing a visible light LED device according to claim 1, wherein in the step of integrating, a compound semiconductor film containing In is formed on at least one of the surfaces to be directly bonded. A method of manufacturing a visible light LED device, comprising: a step; and a step of directly bonding the respective surfaces by annealing. 11. The method for manufacturing a visible light LED device according to claim 3, wherein the blue LED growing step comprises forming a blue L on a sapphire substrate.
ED GaN buffer layer, n-GaN contact layer, n
-AlGaN cladding layer, p-InGaN active layer, p-
The AlGaN clad layer and the p-GaN contact layer are sequentially grown.
The p-GaP layer and the n-GaP layer of the ED are sequentially grown. In the red LED growth step, the p-GaAlAs cladding layer of the red LED and the p-GaAlA layer are formed on the p-GaAs substrate.
s active layer, n-GaAl clad layer, and n-GaAl
A method for manufacturing a visible light LED device, which comprises sequentially growing As contact layers. 12. The method of manufacturing a visible light LED device according to claim 4, wherein the blue LED growth step comprises forming a blue L on a sapphire substrate.
ED GaN buffer layer, n-GaN contact layer, n
-AlGaN cladding layer, p-InGaN active layer, p-
The AlGaN clad layer and the p-GaN contact layer are grown, and the green LED growing step is performed by forming the green L on the p-GaP substrate.
The p-GaP layer and the n-GaP layer of the ED are grown. In the red LED growth step, the p-GaAlAs buffer layer of the red LED and the p-GaAlA layer are formed on the p-GaAs substrate.
s clad layer, p-GaAlAs active layer, n-GaAl
A method for manufacturing a visible light LED device, which comprises growing a clad layer and an n-GaAlAs contact layer. 13. The method of manufacturing a visible light LED device according to claim 5, wherein the blue LED growth step comprises forming a blue L on a sapphire substrate.
ED GaN buffer layer, n-GaN contact layer, n
-AlGaN cladding layer, p-InGaN active layer, p-
The AlGaN clad layer and the p-GaN contact layer are sequentially grown. In the green LED growth step, green L
The n-GaP layer and the p-GaP layer of the ED are sequentially grown. In the red LED growth step, the p-GaAlAs buffer layer of the red LED and the p-GaAlA layer are formed on the p-GaAs substrate.
s clad layer, p-GaAlAs active layer, n-GaAl
A method for manufacturing a visible light LED device, which comprises sequentially growing a clad layer and an n-GaAlAs contact layer. 14. The method of manufacturing a visible light LED device according to claim 6, wherein the blue LED growing step comprises forming a blue L on a sapphire substrate.
ED GaN buffer layer, n-GaN contact layer, n
-AlGaN cladding layer, p-InGaN active layer, p-
An AlGaN clad layer and a p-GaN contact layer are sequentially grown. In the green and red LED growth step, a p-GaP pn junction surface for forming a green LED is formed on a p-GaP common substrate.
Layer, and an n-GaP layer, and subsequently a p-GaP layer that forms a pn junction surface of the red LED together with the n-GaP layer are successively grown in one step. A method for manufacturing an optical LED device. 15. The method of manufacturing a visible light LED device according to claim 7, wherein the blue LED growing step comprises forming a blue L on a sapphire substrate.
ED GaN buffer layer, n-GaN contact layer, n
-AlGaN cladding layer, p-InGaN active layer, p-
The AlGaN clad layer and the p-GaN contact layer are sequentially grown. In the green and red LED growth step, a p-GaP pn junction surface for forming a red LED is formed on a p-GaP common substrate.
Layer, an n-GaP layer, and subsequently, a p-GaP layer forming a pn junction surface of the green LED together with the n-GaP layer are successively grown in one step. Method for manufacturing optical LED device. 16. The method for manufacturing a visible light LED device according to claim 8, wherein the blue LED growing step comprises forming a blue L on a sapphire substrate.
ED GaN buffer layer, n-GaN contact layer, n
-AlGaN cladding layer, p-InGaN active layer, p-
The AlGaN clad layer and the p-GaN contact layer are sequentially grown. In the green and red LED growth step, a selective mask is applied to a region on the p-GaP common substrate including a region where the first electrode is formed. Pn of green LED
The p-GaP layer and the n-GaP layer that form the junction surface are continuously grown, and a selective mask is formed in a region including a region on the n-GaP layer where the second electrode is formed. And a step of growing the p-GaP layer that forms the pn junction surface of the red LED together with the n-GaP layer. 17. The method for manufacturing a visible light LED device according to claim 9, wherein the blue LED growth step comprises forming a blue L on a sapphire substrate.
ED GaN buffer layer, n-GaN contact layer, n
-AlGaN cladding layer, p-InGaN active layer, p-
The AlGaN clad layer and the p-GaN contact layer are sequentially grown. In the green and red LED growth steps, an insulating film is first formed on the p-GaP common substrate, and the <11/1> direction [ An opening formed by a line including a line of [11/1] direction and its equivalent direction] is provided, the common substrate is etched by the opening, and the insulating film is formed in a region cut by the etching. Green LED as a mask
P-GaP layer forming a pn junction surface of n, and n-GaP
Layer, and subsequently a p-GaP layer forming a pn junction surface of the red LED together with the n-GaP layer is continuously grown, and then the insulating film is removed so that each of the crystals has the same surface as the substrate. A method for manufacturing a visible light LED device, which is a step of forming the visible light LED device. 18. A visible light LED device comprising: a blue LED including a semiconductor crystal that emits blue light; a green LED including a semiconductor crystal that emits green light; and a red color including a semiconductor crystal that emits red light. 3 with LED
A visible light LED device in which two LEDs are directly bonded and integrated by annealing. 19. A visible light LED device comprising: a blue LED including a semiconductor crystal that emits blue light; a green LED that includes a semiconductor crystal that emits green light; and a green and red LED that includes a semiconductor crystal that emits red light. 2 color LED
A visible light LED device characterized by being directly bonded and integrated by annealing. 20. The visible light LED device according to claim 18, wherein the blue LED is formed by sequentially forming a first conductivity type crystal and a second conductivity type crystal on a blue LED substrate. The green LED is one in which a second conductivity type crystal and a first conductivity type crystal are sequentially formed on a second conductivity type substrate for the green LED, and the red LED is a second conductivity type for the red LED. A second conductivity type crystal and a first conductivity type crystal are sequentially formed on a substrate, wherein the growth surface of the blue LED is the second conductivity type substrate of the green LED, and the growth surface of the green LED is Above red L
Directly annealed to the growth surface of the ED, an electrode for the red LED is formed on the surface of the second conductivity type substrate of the red LED, and a common electrode of the green LED and the red LED is the red L
The green L exposed by removing each crystal of the ED and the desired portion of the second conductivity type substrate for the red LED.
The common electrode of the blue LED and the green LED formed in the region of the first conductivity type crystal of the ED is the green L
The blue L exposed by removing the respective parts of the ED crystal and the second conductivity type substrate for the green LED.
An electrode for the blue LED, which is formed in the region of the second conductivity type crystal of the ED, is exposed by removing the second conductivity type crystal of the blue LED to at least a region reaching the first conductivity type crystal of the blue LED. A visible light LED device, characterized in that it is formed in a region of a first conductivity type crystal of the blue LED. 21. The visible light LED device according to claim 18, wherein the blue LED has a first-conductivity-type crystal and a second-conductivity-type crystal sequentially formed on a substrate for the blue LED. The green LED is one in which a second conductivity type crystal and a first conductivity type crystal are sequentially formed on a second conductivity type substrate for the green LED, and the red LED is a second conductivity type for the red LED. A second conductivity type crystal and a first conductivity type crystal are sequentially formed on a substrate, wherein the growth surface of the blue LED is the second conductivity type substrate of the green LED, and the growth surface of the green LED is Above red L
An electrode for the red LED is directly bonded to the growth surface of the ED by annealing, and an electrode for the red LED is formed on the surface of the second conductivity type crystal of the red LED exposed by removing the second conductivity type substrate of the red LED, The common electrode of the green LED and the red LED is the above red L
By removing a desired portion of each crystal of the ED, the green LED is formed in the exposed region of the first conductivity type crystal of the green LED, and the common electrode of the blue LED and the green LED is the green L
Blue LED exposed by removing each crystal of ED and desired part of the second conductivity type substrate for green LED
An electrode for a blue LED is exposed by removing the second conductivity type crystal of the blue LED to at least a region reaching the first conductivity type crystal of the blue LED. A visible light LED device, which is formed in a region of a first conductivity type crystal of a blue LED. 22. The visible light LED device according to claim 18, wherein the blue LED is formed by sequentially forming a first conductivity type crystal and a second conductivity type crystal on a blue LED substrate. The green LED has a first conductivity type crystal and a second conductivity type crystal sequentially formed on a first conductivity type substrate for the green LED, and the red LED has a second conductivity type for the red LED. A second conductivity type crystal and a first conductivity type crystal are sequentially formed on a substrate, the growth surface of the blue LED is directly annealed to the growth surface of the green LED, and The green LED with the first conductivity type substrate removed and exposed
The first conductivity type crystal is directly bonded to the growth surface of the red LED by annealing, and the electrode for the red LED is exposed by removing the second conductivity type substrate of the red LED. The common electrode of the green LED and the red LED formed on the surface of the conductivity type crystal is the red L
By removing a desired portion of each crystal of the ED, the green LED is formed in the exposed region of the first conductivity type crystal of the green LED, and the common electrode of the blue LED and the green LED is the green L
The electrode for blue LED is formed in the region of the second conductivity type crystal of the blue LED exposed by removing a desired portion of each crystal of the ED, and the second conductivity type crystal of the blue LED is at least the blue color. A visible light LED device, characterized in that the visible light LED is formed in a region of the first conductivity type crystal of the blue LED which is exposed by removing a region reaching the first conductivity type crystal of the LED. 23. The visible light LED device according to claim 19, wherein the blue LED is formed by sequentially forming a first conductivity type crystal and a second conductivity type crystal on a blue LED substrate. The green and red LEDs are a second conductivity type crystal forming a pn junction surface of the green LED on a common second conductivity type substrate for the green and red LEDs, and a first conductivity type crystal, and then the second conductivity type crystal. A second conductivity type crystal forming a pn junction surface of a red LED is sequentially formed together with a first conductivity type crystal, and the growth surface of the blue LED is the green or red LED.
Of the second LED of the second conductivity type is directly bonded to a common second conductivity type substrate of the red LED, the electrode for the red LED is formed on the surface of the second conductivity type crystal of the red LED, and the common electrode of the green LED and the red LED is the above red. L
The common electrode of the blue LED and the green LED is formed in the region of the first conductivity type crystal common to the green and red LEDs exposed by removing a desired portion of the second conductivity type crystal of the ED. ，
And a region of the second-conductivity-type crystal of the green LED exposed by removing a desired portion of the first-conductivity-type crystal common to the red LED, and the electrode for the blue LED is the second-conductivity of the green LED. Type crystal, the second conductivity type substrate of the green LED, and the blue L
The second conductivity type crystal of the ED is formed in the region of the first conductivity type crystal of the blue LED exposed by removing at least the region reaching the first conductivity type crystal of the blue LED. Visible light LED device. 24. The visible light LED device according to claim 19, wherein the blue LED is formed by sequentially forming a first conductivity type crystal and a second conductivity type crystal on a blue LED substrate. The green and red LEDs are a second conductivity type crystal forming a pn junction surface of the red LED on a common second conductivity type substrate for the green and red LEDs, and a first conductivity type crystal, and then the second conductivity type crystal. A second conductivity type crystal forming a pn junction surface of a green LED is sequentially formed together with a first conductivity type crystal, and the growth surface of the blue LED is the green or red LED.
The electrode for the red LED is formed on the surface of the second conductivity type crystal of the red LED exposed by removing the common substrate of the green LED and the red LED. The common electrode of the LED and the red LED is the above red L
The common electrode of the blue LED and the green LED is formed in the region of the first conductivity type crystal common to the green and red LEDs exposed by removing a desired portion of the second conductivity type crystal of the ED. ，
And a region of the second-conductivity-type crystal of the green LED exposed by removing a desired portion of the first-conductivity-type crystal common to the red LED, and the electrode for the blue LED is the second-conductivity of the green LED. Of the first-conductivity-type crystal of the blue LED exposed by removing at least a region of the first-conductivity-type crystal of the blue LED and at least a region reaching the first-conductivity-type crystal of the blue LED. A visible light LED device, which is formed in a region. 25. The visible light LED device according to claim 19, wherein the blue LED is formed by sequentially forming a first conductivity type crystal and a second conductivity type crystal on a blue LED substrate. The green and red LEDs are provided on the common first conductive type substrate for the green and red LEDs in the first area.
A second conductivity type crystal forming a pn junction surface and a first conductivity type crystal are formed, and a second conductivity type crystal forming a pn junction surface of a red LED together with the first conductivity type crystal is the first conductivity type crystal. It is formed in the second region on the conductivity type crystal, and the growth surface of the blue LED is the green or red LED.
Is directly bonded to the common substrate of the red LED, the electrode for the red LED is formed on the surface of the second conductivity type crystal of the red LED, the common electrode of the green LED and the red LED is the above green,
And a region formed on the first conductivity type crystal of the red LED excluding the second region, and the common electrodes of the blue LED and the green LED are the green,
And an electrode for the blue LED, which is formed in a region excluding the first region on the common second conductivity type substrate of the red LED and at least a part of the second conductivity type crystal of the blue LED of the blue LED. The blue LED exposed by removing until reaching the first conductivity type crystal
A visible light LED device, wherein the visible light LED device is formed in the first conductivity type crystal region. 26. The visible light LED device according to claim 19, wherein the blue LED is formed by sequentially forming a first conductivity type crystal and a second conductivity type crystal on a blue LED substrate. In the green and red LEDs, at least one inner wall surface has a recess in the shape of which the surface is expanded upward, in the recess of the common substrate of the second conductivity type of the green and red LEDs, The second conductivity type crystal forming the pn junction surface of the green LED, the first conductivity type crystal, and the second conductivity type crystal forming the pn junction surface of the red LED together with the first conductivity type crystal, The second conductivity type crystal of the green LED and the first conductivity type crystal of the green and red LEDs are exposed on the same surface as the upper surface of the second conductivity type crystal of the red LED above the inner wall surface of the recess, The above three crystal surfaces are flat It is formed such that the growth surface of the blue LED is the green, and red LED
Is directly bonded to the common substrate of the red LED, the electrode for the red LED is formed on the surface of the second conductivity type crystal of the red LED, the common electrode of the green LED and the red LED is the green,
And the first conductivity type crystal of the red LED is formed on the exposed surface area, and the common electrode of the blue LED and the green LED is the green L
The second-conductivity-type crystal of the ED is formed on the exposed surface region, and the electrode for the blue LED reaches at least a part of the second-conductivity-type crystal of the blue LED to the first-conductivity-type crystal of the blue LED. The blue LED exposed by removing
A visible light LED device, wherein the visible light LED device is formed in the first conductivity type crystal region. 27. The visible light LED device according to claim 18, wherein a compound semiconductor film containing In is formed on at least one of the surfaces to which the respective LEDs are directly bonded by annealing. A visible light LED device characterized by the above. 28. The visible light LED device according to claim 20, wherein the blue LED is a blue LED G on a sapphire substrate.
aN buffer layer, n-GaN contact layer, n-AlG
aN cladding layer, p-InGaN active layer, p-AlGa
The N-clad layer and the p-GaN contact layer are sequentially formed, and the green LED is a p-type green LED on a p-GaP substrate.
-GaP layer and n-GaP layer are sequentially formed, and the red LED includes a p-GaAs substrate, a p-GaAlAs clad layer, a p-GaAlAs active layer, an n-GaAl clad layer, and a red LED on a p-GaAs substrate. And a n-GaAlAs contact layer are sequentially formed on the visible light LED device. 29. The visible light LED device according to claim 21, wherein the blue LED is a blue LED G on a sapphire substrate.
aN buffer layer, n-GaN contact layer, n-AlG
aN cladding layer, p-InGaN active layer, p-AlGa
The N-clad layer and the p-GaN contact layer are sequentially formed, and the green LED is a p-type green LED on a p-GaP substrate.
-GaP layer and n-GaP layer are sequentially formed, and the red LED is a red LED p-GaAlAs buffer layer, p-GaAlAs clad layer, p-GaAlAs active layer, and A visible light LED device comprising an n-GaAl clad layer and an n-GaAlAs contact layer sequentially formed. 30. The visible light LED device according to claim 22, wherein the blue LED is a blue LED G on a sapphire substrate.
aN buffer layer, n-GaN contact layer, n-AlG
aN cladding layer, p-InGaN active layer, p-AlGa
The N-clad layer and the p-GaN contact layer are sequentially formed, and the green LED is a green LED n-type on an n-GaP substrate.
A GaP layer and a p-GaP layer are sequentially formed, and the red LED includes a p-GaAs substrate, a p-GaAlAs buffer layer, a p-GaAlAs clad layer, a p-GaAlAs active layer, and a red LED on a p-GaAs substrate. A visible light LED device comprising an n-GaAl clad layer and an n-GaAlAs contact layer sequentially formed. 31. The visible light LED device according to claim 23, wherein the blue LED is a blue LED G on a sapphire substrate.
aN buffer layer, n-GaN contact layer, n-AlG
aN cladding layer, p-InGaN active layer, p-AlGa
The N-clad layer and the p-GaN contact layer are sequentially formed, and the green and red LEDs are a p-GaP layer forming a pn junction surface of the green LED on the p-GaP common substrate, and n. A visible light LED device, comprising: a GaP layer, and subsequently, a p-GaP layer forming a pn junction surface of a red LED together with the n-GaP layer. 32. The visible light LED device according to claim 24, wherein the blue LED is a blue LED G on a sapphire substrate.
aN buffer layer, n-GaN contact layer, n-AlG
aN cladding layer, p-InGaN active layer, p-AlGa
The N-clad layer and the p-GaN contact layer are sequentially formed. The green and red LEDs are a p-GaP layer forming a pn junction surface of the red LED on the p-GaP common substrate, and n. A method for manufacturing a visible light LED device, comprising: a GaP layer, and subsequently a p-GaP layer forming a pn junction surface of a green LED together with the n-GaP layer, which are successively formed. 33. The visible light LED device according to claim 25, wherein the blue LED is a blue LED G on a sapphire substrate.
aN buffer layer, n-GaN contact layer, n-AlG
aN cladding layer, p-InGaN active layer, p-AlGa
The N-clad layer and the p-GaN contact layer are sequentially formed, and the green and red LEDs are formed by forming a pn junction surface of the green LED in the first region on the p-GaP common substrate. −
A GaP layer and an n-GaP layer are formed, and the n-
A method of manufacturing a visible light LED device, wherein a p-GaP layer forming a pn junction surface of a red LED together with the GaP layer is formed in a second region on the n-GaP layer. 34. The visible light LED device according to claim 26, wherein the blue LED is a blue LED G on a sapphire substrate.
aN buffer layer, n-GaN contact layer, n-AlG
aN cladding layer, p-InGaN active layer, p-AlGa
An N-clad layer and a p-GaN contact layer are sequentially formed, and the green and red LEDs have at least one inner wall surface having a concave portion in which the surface is expanded upward. Green LE is placed in the recess of the p-GaP common substrate.
P-GaP layer forming a pn junction surface of D, and n-Ga
P layer, and then the n-GaP layer together with red LE
The p-GaP layer forming the pn junction surface of D is the green L
ED p-GaP layer and the green and red LED n-
The GaP layer and the red LED are above the inner wall surface of the recess.
A visible light LED device, which is exposed on the same surface as the upper surface of the p-GaP layer, and is formed so that the three crystal surfaces become flat.