WO2010024629A3 - 양자점 태양광 소자 및 그 제조방법 - Google Patents

양자점 태양광 소자 및 그 제조방법 Download PDF

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Publication number
WO2010024629A3
WO2010024629A3 PCT/KR2009/004852 KR2009004852W WO2010024629A3 WO 2010024629 A3 WO2010024629 A3 WO 2010024629A3 KR 2009004852 W KR2009004852 W KR 2009004852W WO 2010024629 A3 WO2010024629 A3 WO 2010024629A3
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semiconductor
quantum dot
photovoltaic device
forming
manufacturing
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PCT/KR2009/004852
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English (en)
French (fr)
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WO2010024629A2 (ko
Inventor
김경중
이우
김용성
김영헌
홍승휘
윤완수
강상우
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한국표준과학연구원
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Application filed by 한국표준과학연구원 filed Critical 한국표준과학연구원
Priority to DE112009002124T priority Critical patent/DE112009002124T5/de
Priority to JP2011524911A priority patent/JP5223010B2/ja
Priority to CN2009801381281A priority patent/CN102165605B/zh
Priority to US13/061,297 priority patent/US8603849B2/en
Publication of WO2010024629A2 publication Critical patent/WO2010024629A2/ko
Publication of WO2010024629A3 publication Critical patent/WO2010024629A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

본 발명은 넓은 파장 대역의 광 흡수가 가능하며, 높은 전자-정공 쌍 분리 효율을 가져 높은 광전 변환 효율을 갖는 반도체 기반 태양광 소자 및 그 제조방법을 제공하는 것이며, 상세하게 본 발명에 따른 태양광 소자의 제조방법은 a) p형 또는 n형 반도체 기판 상부에, 상기 반도체 기판과 동일 형의 불순물이 도핑된 매질 내부에 반도체 양자점이 형성된 반도체 양자점 박막을 형성하는 단계; b) 부분 에칭을 통하여 상기 반도체 양자점 박막을 관통하는 기공 어레이를 형성하는 단계; c) 상기 기공 어레이가 형성된 반도체 양자점 박막에 상기 반도체 기판과 상보적 불순물이 도핑된 반도체를 증착하는 단계; d) 상기 상보적 불순물이 도핑된 반도체 상에 투명전도막 및 상부전극을 순차적으로 형성하고, 상기 반도체 기판 하부에 하부전극을 형성하는 단계;를 포함하여 수행되는 특징이 있다.
PCT/KR2009/004852 2008-08-28 2009-08-28 양자점 태양광 소자 및 그 제조방법 WO2010024629A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE112009002124T DE112009002124T5 (de) 2008-08-28 2009-08-28 Quantenpunkt-Photovoltaikvorrichtung und deren Herstellungsverfahren
JP2011524911A JP5223010B2 (ja) 2008-08-28 2009-08-28 量子ドット太陽光素子及びその製造方法
CN2009801381281A CN102165605B (zh) 2008-08-28 2009-08-28 量子点光伏器件及其制造方法
US13/061,297 US8603849B2 (en) 2008-08-28 2009-08-28 Quantum dot photovoltaic device and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0084695 2008-08-28
KR20080084695 2008-08-28

Publications (2)

Publication Number Publication Date
WO2010024629A2 WO2010024629A2 (ko) 2010-03-04
WO2010024629A3 true WO2010024629A3 (ko) 2010-04-29

Family

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PCT/KR2009/004852 WO2010024629A2 (ko) 2008-08-28 2009-08-28 양자점 태양광 소자 및 그 제조방법

Country Status (6)

Country Link
US (1) US8603849B2 (ko)
JP (1) JP5223010B2 (ko)
KR (1) KR101060014B1 (ko)
CN (1) CN102165605B (ko)
DE (1) DE112009002124T5 (ko)
WO (1) WO2010024629A2 (ko)

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US9382474B2 (en) 2010-04-06 2016-07-05 The Governing Council Of The University Of Toronto Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles
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Also Published As

Publication number Publication date
JP5223010B2 (ja) 2013-06-26
US8603849B2 (en) 2013-12-10
JP2012501536A (ja) 2012-01-19
CN102165605A (zh) 2011-08-24
WO2010024629A2 (ko) 2010-03-04
KR20100027016A (ko) 2010-03-10
KR101060014B1 (ko) 2011-08-26
CN102165605B (zh) 2013-04-10
DE112009002124T5 (de) 2012-01-26
US20110146775A1 (en) 2011-06-23

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