WO2007129097A3 - Manufacture of cdte photovoltaic cells using mocvd - Google Patents

Manufacture of cdte photovoltaic cells using mocvd Download PDF

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Publication number
WO2007129097A3
WO2007129097A3 PCT/GB2007/001698 GB2007001698W WO2007129097A3 WO 2007129097 A3 WO2007129097 A3 WO 2007129097A3 GB 2007001698 W GB2007001698 W GB 2007001698W WO 2007129097 A3 WO2007129097 A3 WO 2007129097A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
mocvd
manufacture
photovoltaic cells
cdte
Prior art date
Application number
PCT/GB2007/001698
Other languages
French (fr)
Other versions
WO2007129097A2 (en
Inventor
Vincent Barrioz
Stuart James Curzon Irvine
Original Assignee
Univ Wales Bangor
Vincent Barrioz
Stuart James Curzon Irvine
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Wales Bangor, Vincent Barrioz, Stuart James Curzon Irvine filed Critical Univ Wales Bangor
Publication of WO2007129097A2 publication Critical patent/WO2007129097A2/en
Publication of WO2007129097A3 publication Critical patent/WO2007129097A3/en
Priority to GB0821728A priority Critical patent/GB2452434A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A CdTe photovoltaic cell according to the present invention comprises an n- type CdS window layer; a p-type CdTe absorber layer; and a CdCl2 cap layer. The cell is manufactured by growing each successive layer by MOCVD in situ. In the particular example of figure 1, the cell (100) comprises a transparent superstrate (101), a layer of transparent conductive oxide (TCO) (102), a high resistivity (high-p) layer (103), a front contact (104) formed upon the TCO layer, a window layer (105), an absorber layer (106), a highly p+ doped layer (107), a cap layer (108) and a back contact (109) provided upon said cap layer (108).
PCT/GB2007/001698 2006-05-08 2007-05-08 Manufacture of cdte photovoltaic cells using mocvd WO2007129097A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0821728A GB2452434A (en) 2006-05-08 2008-11-28 Manufactue of CDTE photovoltaic cells using MOCVD

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0608987.4A GB0608987D0 (en) 2006-05-08 2006-05-08 Manufacture of CdTe photovoltaic cells using MOCVD
GB0608987.4 2006-05-08

Publications (2)

Publication Number Publication Date
WO2007129097A2 WO2007129097A2 (en) 2007-11-15
WO2007129097A3 true WO2007129097A3 (en) 2008-06-19

Family

ID=36604063

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2007/001698 WO2007129097A2 (en) 2006-05-08 2007-05-08 Manufacture of cdte photovoltaic cells using mocvd

Country Status (2)

Country Link
GB (2) GB0608987D0 (en)
WO (1) WO2007129097A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9190555B2 (en) 2008-07-17 2015-11-17 Uriel Solar, Inc. Polycrystalline CdTe thin film semiconductor photovoltaic cell structures for use in solar electricity generation

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MX2012000156A (en) * 2009-06-22 2012-02-21 First Solar Inc Method and apparatus for annealing a deposited cadmium stannate layer.
JP5878465B2 (en) 2009-07-13 2016-03-08 ファースト ソーラー インコーポレイテッド Solar cell front contact doping
US20110143489A1 (en) * 2009-12-11 2011-06-16 General Electric Company Process for making thin film solar cell
US8338698B2 (en) * 2010-08-27 2012-12-25 Primestar Solar, Inc. Anisotropic conductive layer as a back contact in thin film photovoltaic devices
CN102185000A (en) * 2011-04-06 2011-09-14 四川大学 Cadmium sulfide thin film solar cell and preparation method thereof
US9608144B2 (en) * 2011-06-01 2017-03-28 First Solar, Inc. Photovoltaic devices and method of making
CN103000738A (en) * 2011-09-13 2013-03-27 上海太阳能电池研究与发展中心 Mechanical laminated cadmium telluride/polycrystalline silicon solar cell combination
US20130104985A1 (en) * 2011-11-01 2013-05-02 General Electric Company Photovoltaic device with mangenese and tellurium interlayer
CN103165743B (en) * 2011-12-15 2015-09-30 广东先导稀材股份有限公司 The preparation method and halogen doping cadmium telluride diaphragm solar battery and preparation method thereof of halogen doping cadmium telluride
CN102544180A (en) * 2012-02-08 2012-07-04 南京大学 Chalcogenide solar cell and manufacturing method thereof
US9117956B2 (en) 2012-08-31 2015-08-25 First Solar, Inc. Method of controlling the amount of Cu doping when forming a back contact of a photovoltaic cell
WO2014121187A2 (en) 2013-02-01 2014-08-07 First Solar, Inc. Photovoltaic device including a p-n junction and method of manufacturing
EP2976783A4 (en) * 2013-03-22 2016-11-30 First Solar Inc Photovoltaic device including a back contact and method of manufacturing
US11876140B2 (en) 2013-05-02 2024-01-16 First Solar, Inc. Photovoltaic devices and method of making
US10062800B2 (en) 2013-06-07 2018-08-28 First Solar, Inc. Photovoltaic devices and method of making
US9159864B2 (en) 2013-07-25 2015-10-13 First Solar, Inc. Back contact paste with Te enrichment and copper doping control in thin film photovoltaic devices
US9306105B2 (en) 2013-07-31 2016-04-05 First Solar Malaysia Sdn. Bhd. Finger structures protruding from absorber layer for improved solar cell back contact
US10529883B2 (en) 2014-11-03 2020-01-07 First Solar, Inc. Photovoltaic devices and method of manufacturing
DE102014225862B4 (en) * 2014-12-15 2023-01-19 China Triumph International Engineering Co., Ltd. Process for forming a gradient thin film by spray pyrolysis
JP2020511000A (en) * 2017-02-24 2020-04-09 ファースト・ソーラー・インコーポレーテッド Doped photovoltaic semiconductor layer and manufacturing method
WO2018157106A1 (en) * 2017-02-27 2018-08-30 First Solar, Inc. Thin film stacks for group v doping, photovoltaic devices including the same, and methods for forming photovoltaic devices with thin film stacks
CN111630669B (en) * 2018-02-01 2024-04-19 第一阳光公司 V group doping method of absorption layer in photovoltaic device
CN113964244B (en) * 2021-12-22 2022-03-11 成都中建材光电材料有限公司 Solar thin film battery and manufacturing method thereof
CN115108831B (en) * 2022-06-15 2023-10-10 先导薄膜材料（广东）有限公司 Zinc telluride doped target and preparation method and application thereof

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
BARRIOZ V ET AL: "A comparison of in situ As doping with ex situ CdCl2 treatment of CdTe solar cells", THIN-FILM COMPOUND SEMICONDUCTOR PHOTOVOLTAICS SYMPOSIUM, MATER. RES. SOC. SYMP. PROC., vol. 865, 29 March 2005 (2005-03-29) - 1 April 2005 (2005-04-01), pages 67 - 72, XP002461742 *
BERRIGAN R A ET AL: "Thin films of CdTe/CdS grown by MOCVD for photovoltaics", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 195, no. 1-4, 15 December 1998 (1998-12-15), pages 718 - 724, XP004154342, ISSN: 0022-0248 *
ROHATGI A ET AL: "An improved understanding of efficiency limiting defects in polycrystalline CdTe/CdS solar cells", PROCEEDINGS OF THE PHOTOVOLTAIC SPECIALISTS CONFERENCE. LAS VEGAS, OCT. 7 - 11, 1991, NEW YORK, IEEE, US, vol. VOL. 2 CONF. 22, 7 October 1991 (1991-10-07), pages 962 - 966, XP010039351, ISBN: 0-87942-636-5 *
ZOPPI G ET AL.: "Grain and crystal texture properties of absorber layers in MOCVD-grown CdTe/CdS solar cells", IOP ELECTRONIC JOURNALS, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 21, no. 6, 19 April 2006 (2006-04-19), pages 763 - 770, XP002461743 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9190555B2 (en) 2008-07-17 2015-11-17 Uriel Solar, Inc. Polycrystalline CdTe thin film semiconductor photovoltaic cell structures for use in solar electricity generation

Also Published As

Publication number Publication date
WO2007129097A2 (en) 2007-11-15
GB0608987D0 (en) 2006-06-14
GB0821728D0 (en) 2008-12-31
GB2452434A (en) 2009-03-04

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