GB2452434A - Manufactue of CDTE photovoltaic cells using MOCVD - Google Patents
Manufactue of CDTE photovoltaic cells using MOCVDInfo
- Publication number
- GB2452434A GB2452434A GB0821728A GB0821728A GB2452434A GB 2452434 A GB2452434 A GB 2452434A GB 0821728 A GB0821728 A GB 0821728A GB 0821728 A GB0821728 A GB 0821728A GB 2452434 A GB2452434 A GB 2452434A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- mocvd
- manufactue
- photovoltaic cells
- cdte
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 title abstract 2
- 229910004613 CdTe Inorganic materials 0.000 abstract 2
- 239000006096 absorbing agent Substances 0.000 abstract 2
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 abstract 2
- 238000011065 in-situ storage Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
A CdTe photovoltaic cell according to the present invention comprises an n- type CdS window layer; a p-type CdTe absorber layer; and a CdCl2 cap layer. The cell is manufactured by growing each successive layer by MOCVD in situ. In the particular example of figure 1, the cell (100) comprises a transparent superstrate (101), a layer of transparent conductive oxide (TCO) (102), a high resistivity (high-p) layer (103), a front contact (104) formed upon the TCO layer, a window layer (105), an absorber layer (106), a highly p+ doped layer (107), a cap layer (108) and a back contact (109) provided upon said cap layer (108).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0608987.4A GB0608987D0 (en) | 2006-05-08 | 2006-05-08 | Manufacture of CdTe photovoltaic cells using MOCVD |
PCT/GB2007/001698 WO2007129097A2 (en) | 2006-05-08 | 2007-05-08 | Manufacture of cdte photovoltaic cells using mocvd |
Publications (2)
Publication Number | Publication Date |
---|---|
GB0821728D0 GB0821728D0 (en) | 2008-12-31 |
GB2452434A true GB2452434A (en) | 2009-03-04 |
Family
ID=36604063
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GBGB0608987.4A Ceased GB0608987D0 (en) | 2006-05-08 | 2006-05-08 | Manufacture of CdTe photovoltaic cells using MOCVD |
GB0821728A Withdrawn GB2452434A (en) | 2006-05-08 | 2008-11-28 | Manufactue of CDTE photovoltaic cells using MOCVD |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GBGB0608987.4A Ceased GB0608987D0 (en) | 2006-05-08 | 2006-05-08 | Manufacture of CdTe photovoltaic cells using MOCVD |
Country Status (2)
Country | Link |
---|---|
GB (2) | GB0608987D0 (en) |
WO (1) | WO2007129097A2 (en) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2744774C (en) | 2008-07-17 | 2017-05-23 | Uriel Solar, Inc. | High power efficiency, large substrate, polycrystalline cdte thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation |
TW201112439A (en) * | 2009-06-22 | 2011-04-01 | First Solar Inc | Method and apparatus for annealing a deposited cadmium stannate layer |
KR20120052310A (en) * | 2009-07-13 | 2012-05-23 | 퍼스트 솔라, 인코포레이티드 | Solar cell front contact doping |
US20110143489A1 (en) * | 2009-12-11 | 2011-06-16 | General Electric Company | Process for making thin film solar cell |
US8338698B2 (en) * | 2010-08-27 | 2012-12-25 | Primestar Solar, Inc. | Anisotropic conductive layer as a back contact in thin film photovoltaic devices |
CN102185000A (en) * | 2011-04-06 | 2011-09-14 | 四川大学 | Cadmium sulfide thin film solar cell and preparation method thereof |
US9608144B2 (en) | 2011-06-01 | 2017-03-28 | First Solar, Inc. | Photovoltaic devices and method of making |
CN103000738A (en) * | 2011-09-13 | 2013-03-27 | 上海太阳能电池研究与发展中心 | Mechanical laminated cadmium telluride/polycrystalline silicon solar cell combination |
US20130104985A1 (en) * | 2011-11-01 | 2013-05-02 | General Electric Company | Photovoltaic device with mangenese and tellurium interlayer |
CN103165743B (en) * | 2011-12-15 | 2015-09-30 | 广东先导稀材股份有限公司 | The preparation method and halogen doping cadmium telluride diaphragm solar battery and preparation method thereof of halogen doping cadmium telluride |
CN102544180A (en) * | 2012-02-08 | 2012-07-04 | 南京大学 | Chalcogenide solar cell and manufacturing method thereof |
US9117956B2 (en) | 2012-08-31 | 2015-08-25 | First Solar, Inc. | Method of controlling the amount of Cu doping when forming a back contact of a photovoltaic cell |
US9698285B2 (en) | 2013-02-01 | 2017-07-04 | First Solar, Inc. | Photovoltaic device including a P-N junction and method of manufacturing |
BR112015024056A2 (en) * | 2013-03-22 | 2017-07-18 | First Solar Inc | photovoltaic structure and process for manufacturing a photovoltaic device |
US11876140B2 (en) | 2013-05-02 | 2024-01-16 | First Solar, Inc. | Photovoltaic devices and method of making |
US10062800B2 (en) | 2013-06-07 | 2018-08-28 | First Solar, Inc. | Photovoltaic devices and method of making |
US9159864B2 (en) | 2013-07-25 | 2015-10-13 | First Solar, Inc. | Back contact paste with Te enrichment and copper doping control in thin film photovoltaic devices |
US9306105B2 (en) | 2013-07-31 | 2016-04-05 | First Solar Malaysia Sdn. Bhd. | Finger structures protruding from absorber layer for improved solar cell back contact |
US10529883B2 (en) | 2014-11-03 | 2020-01-07 | First Solar, Inc. | Photovoltaic devices and method of manufacturing |
DE102014225862B4 (en) * | 2014-12-15 | 2023-01-19 | China Triumph International Engineering Co., Ltd. | Process for forming a gradient thin film by spray pyrolysis |
CN110546769B (en) * | 2017-02-24 | 2023-12-05 | 第一阳光公司 | Doped photovoltaic semiconductor layer and method of manufacture |
JP6776456B2 (en) * | 2017-02-27 | 2020-10-28 | ファースト・ソーラー・インコーポレーテッド | A method for forming a thin film laminate for Group V doping, a photovoltaic device containing the same, and a photovoltaic device having the thin film laminate. |
EP3747057B1 (en) * | 2018-02-01 | 2023-03-15 | First Solar, Inc. | Method for group v doping of an absorber layer in photovoltaic devices |
CN113964244B (en) * | 2021-12-22 | 2022-03-11 | 成都中建材光电材料有限公司 | Solar thin film battery and manufacturing method thereof |
CN115108831B (en) * | 2022-06-15 | 2023-10-10 | 先导薄膜材料(广东)有限公司 | Zinc telluride doped target and preparation method and application thereof |
-
2006
- 2006-05-08 GB GBGB0608987.4A patent/GB0608987D0/en not_active Ceased
-
2007
- 2007-05-08 WO PCT/GB2007/001698 patent/WO2007129097A2/en active Application Filing
-
2008
- 2008-11-28 GB GB0821728A patent/GB2452434A/en not_active Withdrawn
Non-Patent Citations (4)
Title |
---|
IOP Electronic Journals, Semiconductor Science and Technology, Vol 21, No 6, 19/04/2006, "Grain and crystal texture properties of absorber layers in MOCVD-grown CdTe/CdS solar cells", Zoppi G et al, pp 763-770 * |
Journal of Crystal Growth, Elsevier, Vol 195, No 1-4, 15th Dec 1998 "Thin films of CdTe/CdS grown by MOCVD for photovoltaics", Berrigan R A et al, pp 718-724 ISSN: 0022-0248 * |
Proceedings of the photovoltaic specialists conf. Las Vegas, Oct 7-11, 1991, New York, IEEE, Vol 2 Conf. 22, 7 Oct 1991, "An improved understanding of efficiency limiting defects in polycrystalline CdTe/CdS solar cells", Rohatgi et al, pp 962-966 * |
Thin Film Compound Semiconductor Photovoltaics Symposium, Matter. Res. Soc. Symp. Proc. Vol 865, 29/03/2005, "A comparison of in situ As doping with ex situ CdCl2 treatment of CdTe solar cells", Barrioz et al, pp 67-72 * |
Also Published As
Publication number | Publication date |
---|---|
WO2007129097A3 (en) | 2008-06-19 |
WO2007129097A2 (en) | 2007-11-15 |
GB0821728D0 (en) | 2008-12-31 |
GB0608987D0 (en) | 2006-06-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |