GB2452434A - Manufactue of CDTE photovoltaic cells using MOCVD - Google Patents

Manufactue of CDTE photovoltaic cells using MOCVD

Info

Publication number
GB2452434A
GB2452434A GB0821728A GB0821728A GB2452434A GB 2452434 A GB2452434 A GB 2452434A GB 0821728 A GB0821728 A GB 0821728A GB 0821728 A GB0821728 A GB 0821728A GB 2452434 A GB2452434 A GB 2452434A
Authority
GB
United Kingdom
Prior art keywords
layer
mocvd
manufactue
photovoltaic cells
cdte
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0821728A
Other versions
GB0821728D0 (en
Inventor
Vincent Barrioz
Stuart John Curzon Irvine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bangor University
Original Assignee
Bangor University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bangor University filed Critical Bangor University
Publication of GB0821728D0 publication Critical patent/GB0821728D0/en
Publication of GB2452434A publication Critical patent/GB2452434A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A CdTe photovoltaic cell according to the present invention comprises an n- type CdS window layer; a p-type CdTe absorber layer; and a CdCl2 cap layer. The cell is manufactured by growing each successive layer by MOCVD in situ. In the particular example of figure 1, the cell (100) comprises a transparent superstrate (101), a layer of transparent conductive oxide (TCO) (102), a high resistivity (high-p) layer (103), a front contact (104) formed upon the TCO layer, a window layer (105), an absorber layer (106), a highly p+ doped layer (107), a cap layer (108) and a back contact (109) provided upon said cap layer (108).
GB0821728A 2006-05-08 2008-11-28 Manufactue of CDTE photovoltaic cells using MOCVD Withdrawn GB2452434A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0608987.4A GB0608987D0 (en) 2006-05-08 2006-05-08 Manufacture of CdTe photovoltaic cells using MOCVD
PCT/GB2007/001698 WO2007129097A2 (en) 2006-05-08 2007-05-08 Manufacture of cdte photovoltaic cells using mocvd

Publications (2)

Publication Number Publication Date
GB0821728D0 GB0821728D0 (en) 2008-12-31
GB2452434A true GB2452434A (en) 2009-03-04

Family

ID=36604063

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB0608987.4A Ceased GB0608987D0 (en) 2006-05-08 2006-05-08 Manufacture of CdTe photovoltaic cells using MOCVD
GB0821728A Withdrawn GB2452434A (en) 2006-05-08 2008-11-28 Manufactue of CDTE photovoltaic cells using MOCVD

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GBGB0608987.4A Ceased GB0608987D0 (en) 2006-05-08 2006-05-08 Manufacture of CdTe photovoltaic cells using MOCVD

Country Status (2)

Country Link
GB (2) GB0608987D0 (en)
WO (1) WO2007129097A2 (en)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2744774C (en) 2008-07-17 2017-05-23 Uriel Solar, Inc. High power efficiency, large substrate, polycrystalline cdte thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation
TW201112439A (en) * 2009-06-22 2011-04-01 First Solar Inc Method and apparatus for annealing a deposited cadmium stannate layer
KR20120052310A (en) * 2009-07-13 2012-05-23 퍼스트 솔라, 인코포레이티드 Solar cell front contact doping
US20110143489A1 (en) * 2009-12-11 2011-06-16 General Electric Company Process for making thin film solar cell
US8338698B2 (en) * 2010-08-27 2012-12-25 Primestar Solar, Inc. Anisotropic conductive layer as a back contact in thin film photovoltaic devices
CN102185000A (en) * 2011-04-06 2011-09-14 四川大学 Cadmium sulfide thin film solar cell and preparation method thereof
US9608144B2 (en) 2011-06-01 2017-03-28 First Solar, Inc. Photovoltaic devices and method of making
CN103000738A (en) * 2011-09-13 2013-03-27 上海太阳能电池研究与发展中心 Mechanical laminated cadmium telluride/polycrystalline silicon solar cell combination
US20130104985A1 (en) * 2011-11-01 2013-05-02 General Electric Company Photovoltaic device with mangenese and tellurium interlayer
CN103165743B (en) * 2011-12-15 2015-09-30 广东先导稀材股份有限公司 The preparation method and halogen doping cadmium telluride diaphragm solar battery and preparation method thereof of halogen doping cadmium telluride
CN102544180A (en) * 2012-02-08 2012-07-04 南京大学 Chalcogenide solar cell and manufacturing method thereof
US9117956B2 (en) 2012-08-31 2015-08-25 First Solar, Inc. Method of controlling the amount of Cu doping when forming a back contact of a photovoltaic cell
US9698285B2 (en) 2013-02-01 2017-07-04 First Solar, Inc. Photovoltaic device including a P-N junction and method of manufacturing
BR112015024056A2 (en) * 2013-03-22 2017-07-18 First Solar Inc photovoltaic structure and process for manufacturing a photovoltaic device
US11876140B2 (en) 2013-05-02 2024-01-16 First Solar, Inc. Photovoltaic devices and method of making
US10062800B2 (en) 2013-06-07 2018-08-28 First Solar, Inc. Photovoltaic devices and method of making
US9159864B2 (en) 2013-07-25 2015-10-13 First Solar, Inc. Back contact paste with Te enrichment and copper doping control in thin film photovoltaic devices
US9306105B2 (en) 2013-07-31 2016-04-05 First Solar Malaysia Sdn. Bhd. Finger structures protruding from absorber layer for improved solar cell back contact
US10529883B2 (en) 2014-11-03 2020-01-07 First Solar, Inc. Photovoltaic devices and method of manufacturing
DE102014225862B4 (en) * 2014-12-15 2023-01-19 China Triumph International Engineering Co., Ltd. Process for forming a gradient thin film by spray pyrolysis
CN110546769B (en) * 2017-02-24 2023-12-05 第一阳光公司 Doped photovoltaic semiconductor layer and method of manufacture
JP6776456B2 (en) * 2017-02-27 2020-10-28 ファースト・ソーラー・インコーポレーテッド A method for forming a thin film laminate for Group V doping, a photovoltaic device containing the same, and a photovoltaic device having the thin film laminate.
EP3747057B1 (en) * 2018-02-01 2023-03-15 First Solar, Inc. Method for group v doping of an absorber layer in photovoltaic devices
CN113964244B (en) * 2021-12-22 2022-03-11 成都中建材光电材料有限公司 Solar thin film battery and manufacturing method thereof
CN115108831B (en) * 2022-06-15 2023-10-10 先导薄膜材料（广东）有限公司 Zinc telluride doped target and preparation method and application thereof

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
IOP Electronic Journals, Semiconductor Science and Technology, Vol 21, No 6, 19/04/2006, "Grain and crystal texture properties of absorber layers in MOCVD-grown CdTe/CdS solar cells", Zoppi G et al, pp 763-770 *
Journal of Crystal Growth, Elsevier, Vol 195, No 1-4, 15th Dec 1998 "Thin films of CdTe/CdS grown by MOCVD for photovoltaics", Berrigan R A et al, pp 718-724 ISSN: 0022-0248 *
Proceedings of the photovoltaic specialists conf. Las Vegas, Oct 7-11, 1991, New York, IEEE, Vol 2 Conf. 22, 7 Oct 1991, "An improved understanding of efficiency limiting defects in polycrystalline CdTe/CdS solar cells", Rohatgi et al, pp 962-966 *
Thin Film Compound Semiconductor Photovoltaics Symposium, Matter. Res. Soc. Symp. Proc. Vol 865, 29/03/2005, "A comparison of in situ As doping with ex situ CdCl2 treatment of CdTe solar cells", Barrioz et al, pp 67-72 *

Also Published As

Publication number Publication date
WO2007129097A3 (en) 2008-06-19
WO2007129097A2 (en) 2007-11-15
GB0821728D0 (en) 2008-12-31
GB0608987D0 (en) 2006-06-14

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Legal Events

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WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)