TWI408821B - - Google Patents

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Publication number
TWI408821B
TWI408821B TW098142586A TW98142586A TWI408821B TW I408821 B TWI408821 B TW I408821B TW 098142586 A TW098142586 A TW 098142586A TW 98142586 A TW98142586 A TW 98142586A TW I408821 B TWI408821 B TW I408821B
Authority
TW
Taiwan
Prior art keywords
type
semiconductor layer
layer
intrinsic
type semiconductor
Prior art date
Application number
TW098142586A
Other languages
Chinese (zh)
Other versions
TW201121065A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to TW098142586A priority Critical patent/TW201121065A/en
Publication of TW201121065A publication Critical patent/TW201121065A/en
Application granted granted Critical
Publication of TWI408821B publication Critical patent/TWI408821B/zh

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

Thin-film solar cells (TFSC) containing nanocrystalline silicon and microcrystalline silicon are mainly composed of a substrate, a first conductive film, a P-i-N type semiconductor structure layer, and a second conductive film and an upper electrode. The P-i-N type semiconductor structure layer has a P-type semiconductor layer, an intrinsic type (i type) semiconductor layer and an N-type semiconductor layer, wherein the intrinsic type (i type) semiconductor layer is formed by interlacing and stacking a plurality of nanocrystalline silicon thin film layers and at least one microcrystalline silicon thin film layer. The use of intrinsic type (i type) semiconductor layer can effectively enhance the photo absorption range of visible light and red, UV light spectra and electron mobility to ensure that various electrical characteristics are effectively enhanced, thereby achieving the purpose of improving solar cell photo conversion efficiency.
TW098142586A 2009-12-11 2009-12-11 Thin-film solar cells containing nanocrystalline silicon and microcrystalline silicon. TW201121065A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW098142586A TW201121065A (en) 2009-12-11 2009-12-11 Thin-film solar cells containing nanocrystalline silicon and microcrystalline silicon.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW098142586A TW201121065A (en) 2009-12-11 2009-12-11 Thin-film solar cells containing nanocrystalline silicon and microcrystalline silicon.

Publications (2)

Publication Number Publication Date
TW201121065A TW201121065A (en) 2011-06-16
TWI408821B true TWI408821B (en) 2013-09-11

Family

ID=45045417

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098142586A TW201121065A (en) 2009-12-11 2009-12-11 Thin-film solar cells containing nanocrystalline silicon and microcrystalline silicon.

Country Status (1)

Country Link
TW (1) TW201121065A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI557425B (en) * 2015-11-24 2016-11-11 財團法人金屬工業研究發展中心 Optoelectronic structure with anti-reflection conductive film

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI482296B (en) * 2011-07-27 2015-04-21 Univ Nat Sun Yat Sen Solar cell structure having a nano anti-reflection layer
TWI475703B (en) * 2011-12-27 2015-03-01 Nexpower Technology Corp Thin-film solar cell
TWI455343B (en) 2012-04-20 2014-10-01 Ind Tech Res Inst A structure of p-i-n microcrystalline silicon of thin-film solar cells and manufacturing thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200849635A (en) * 2007-05-01 2008-12-16 Applied Materials Inc Method of forming thin film solar cells
TW200945598A (en) * 2008-04-24 2009-11-01 Contrel Technology Co Ltd Structure and process of a silicon-based thin film solar-cell with multijunction structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200849635A (en) * 2007-05-01 2008-12-16 Applied Materials Inc Method of forming thin film solar cells
TW200945598A (en) * 2008-04-24 2009-11-01 Contrel Technology Co Ltd Structure and process of a silicon-based thin film solar-cell with multijunction structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI557425B (en) * 2015-11-24 2016-11-11 財團法人金屬工業研究發展中心 Optoelectronic structure with anti-reflection conductive film

Also Published As

Publication number Publication date
TW201121065A (en) 2011-06-16

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