JP2012501536A - 量子ドット太陽光素子及びその製造方法 - Google Patents
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
【選択図】図1
Description
122:半導体薄膜(半導体層) 120:複合積層層
120’:非化学量論化合物層 130:半導体量子ドット層
131、131’:媒質 132、132’:半導体量子ドット
130’:貫通型気孔が形成された多孔性半導体量子ドット層
200:エッチングマスク 210:ナノ多孔性アルミナ
220:網形マスク 300:貫通気孔
140:n型半導体 153:下部電極
151:透明電極 152:上部電極
Claims (14)
- a)p型またはn型半導体基板の上部に、前記半導体基板と同一型の不純物がドープされた媒質の内部に半導体量子ドットが形成された半導体量子ドット薄膜を形成する段階;
b)部分エッチングによって前記半導体量子ドット薄膜を貫く気孔アレイを形成する段階;
c)前記気孔アレイが形成された半導体量子ドット薄膜に前記半導体基板と相補的な不純物がドープされた半導体を蒸着する段階;
d)前記相補的不純物がドープされた半導体上に透明伝導膜及び上部電極を順次に形成し、前記半導体基板の下部に下部電極を形成する段階;
を含んでなることを特徴とする、太陽光素子の製造方法。 - 前記a)段階は、
a1−1)半導体基板の上部に前記半導体基板と同一型の不純物がドープされた半導体窒化物、半導体酸化物またはこれらの混合物の媒質層と半導体層を繰り返し積層して複合積層層を形成する段階;及び
a1−2)前記複合積層層を熱処理して前記半導体基板と同一型の不純物がドープされた半導体窒化物、半導体酸化物またはこれらの混合物である媒質内に半導体量子ドットを形成した後、水素雰囲気で熱処理して前記半導体量子ドットの非結合電子を水素と結合させる段階;を含んでなることを特徴とする、請求項1に記載の太陽光素子の製造方法。 - 前記a)段階は、
a2−1)半導体基板の上部に前記半導体基板と同一型の不純物がドープされ、酸素または窒素が不足した非化学量論比を持つ半導体酸化物、半導体窒化物、またはこれらの混合物を含む非化学量論化合物層を形成する段階;及び
a2−2)前記非化学量論化合物層を熱処理して前記半導体基板と同一型の不純物がドープされた半導体窒化物、半導体酸化物またはこれらの混合物である媒質内に半導体量子ドットを形成した後、水素雰囲気で熱処理して前記半導体量子ドットの非結合電子を水素と結合させる段階;を含んでなることを特徴とする、請求項1に記載の太陽光素子の製造方法。 - a1−1)段階の前記複合積層層はPVD(Physical Vapor Deposition)、CVD(Chemical Vapor Deposition)またはALD(Atomic Layer Deposition)を含む蒸着工程によって形成され、前記複合積層層をなす前記媒質層と半導体層は互いに独立して1nm〜5nmの厚さを有することを特徴とする、請求項2に記載の太陽光素子の製造方法。
- 前記複合積層層をなす半導体層は互いに異なる厚さを持ち、前記半導体基板に隣接した半導体層であるほど厚さが厚いことを特徴とする、請求項4に記載の太陽光素子の製造方法。
- a2−1)段階の前記非化学量論化合物層はPVD(Physical Vapor Deposition)、CVD(Chemical Vapor Deposition)またはALD(Atomic Layer Deposition)を含む蒸着工程によって形成され、前記非化学量論化合物層に含有された前記半導体酸化物または半導体窒化物は化学量論比を満足する結合に必要な酸素量または窒素量において0〜50%が不足であり、非化学量論化合物層の厚さ方向に酸素量または窒素量が勾配(gradient)を有することを特徴とする、請求項3に記載の太陽光素子の製造方法。
- 前記酸素量または窒素量の勾配(gradient)は前記半導体基板に近くなるほど酸素量または窒素量が減少することを特徴とする、請求項6に記載の太陽光素子の製造方法。
- 前記b)段階は、
b1)前記半導体量子ドット薄膜の上部にマスクを形成する段階;及び
b2)反応性イオンエッチング(RIE;Reactive Ion Etching)によって前記マスクのパターンを転写して前記半導体量子ドット薄膜を貫く気孔のアレイを形成する段階;
を含んでなることを特徴とする、請求項1に記載の太陽光素子の製造方法。 - 前記b2)段階の反応性イオンエッチングによって形成された気孔の短軸直径は20nm〜1000nmであることを特徴とする、請求項8に記載の太陽光素子の製造方法。
- 前記太陽光素子はシリコン太陽光素子であり、前記半導体量子ドットはシリコン量子ドットであり、前記媒質はシリコン酸化物、シリコン窒化物またはこれらの混合物であることを特徴とする、請求項1〜9のいずれか1項に記載の太陽光素子の製造方法。
- 下部電極;
前記下部電極上に形成されたn型またはp型の第1半導体層;
前記第1半導体と同一型の不純物がドープされた媒質内に多数の半導体量子ドットが形成され、多数の貫通気孔が形成された多孔性半導体量子ドット層;
前記多孔性半導体量子ドット層に接して形成され、前記第1半導体層と相補的な不純物がドープされた半導体物質である第2半導体層;及び
前記第2半導体上に順次に形成された透明伝導膜及び上部電極;を含んでなることを特徴とする、太陽光素子。 - 前記多孔性半導体量子ドット層の前記半導体量子ドットは互いに異なるサイズを持ち、前記第1半導体層に近くなるほど大きなサイズを持つことを特徴とする、請求項11に記載の太陽光素子。
- 前記多孔性半導体量子ドット層を貫く貫通気孔による表面にp−nジャンクション(p-n junction)が形成され、前記媒質はp−nジャンクションによる空乏(built-in depletion layer)状態であることを特徴とする、請求項11に記載の太陽光素子。
- 前記太陽光素子はシリコン太陽光素子であり、前記半導体量子ドットはシリコン量子ドットであり、前記媒質はシリコン酸化物、シリコン窒化物またはこれらの混合物であることを特徴とする、請求項11に記載の垂直接合半導体量子ドット太陽光素子。
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KR10-2008-0084695 | 2008-08-28 | ||
KR20080084695 | 2008-08-28 | ||
PCT/KR2009/004852 WO2010024629A2 (ko) | 2008-08-28 | 2009-08-28 | 양자점 태양광 소자 및 그 제조방법 |
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US (1) | US8603849B2 (ja) |
JP (1) | JP5223010B2 (ja) |
KR (1) | KR101060014B1 (ja) |
CN (1) | CN102165605B (ja) |
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Also Published As
Publication number | Publication date |
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CN102165605B (zh) | 2013-04-10 |
WO2010024629A3 (ko) | 2010-04-29 |
CN102165605A (zh) | 2011-08-24 |
DE112009002124T5 (de) | 2012-01-26 |
KR101060014B1 (ko) | 2011-08-26 |
WO2010024629A2 (ko) | 2010-03-04 |
KR20100027016A (ko) | 2010-03-10 |
US20110146775A1 (en) | 2011-06-23 |
JP5223010B2 (ja) | 2013-06-26 |
US8603849B2 (en) | 2013-12-10 |
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