JPWO2017038698A1 - 光電変換装置 - Google Patents
光電変換装置 Download PDFInfo
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- JPWO2017038698A1 JPWO2017038698A1 JP2017536988A JP2017536988A JPWO2017038698A1 JP WO2017038698 A1 JPWO2017038698 A1 JP WO2017038698A1 JP 2017536988 A JP2017536988 A JP 2017536988A JP 2017536988 A JP2017536988 A JP 2017536988A JP WO2017038698 A1 JPWO2017038698 A1 JP WO2017038698A1
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 102
- 239000002096 quantum dot Substances 0.000 claims abstract description 171
- 239000004065 semiconductor Substances 0.000 claims abstract description 70
- 230000004888 barrier function Effects 0.000 claims description 41
- 239000010410 layer Substances 0.000 description 170
- 238000010586 diagram Methods 0.000 description 30
- 239000011246 composite particle Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 10
- DPKBAXPHAYBPRL-UHFFFAOYSA-M tetrabutylazanium;iodide Chemical compound [I-].CCCC[N+](CCCC)(CCCC)CCCC DPKBAXPHAYBPRL-UHFFFAOYSA-M 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000011368 organic material Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- VYMPLPIFKRHAAC-UHFFFAOYSA-N 1,2-ethanedithiol Chemical compound SCCS VYMPLPIFKRHAAC-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052798 chalcogen Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RLECCBFNWDXKPK-UHFFFAOYSA-N bis(trimethylsilyl)sulfide Chemical compound C[Si](C)(C)S[Si](C)(C)C RLECCBFNWDXKPK-UHFFFAOYSA-N 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052800 carbon group element Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910001849 group 12 element Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 229910052981 lead sulfide Inorganic materials 0.000 description 1
- 229940056932 lead sulfide Drugs 0.000 description 1
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
3A、3B・・・・・・・電極層
5、7・・・・・・・・・半導体層
7A、7B・・・・・・・量子ドット層
9・・・・・・・・・・・量子ドット
11・・・・・・・・・・量子ドット集積膜
13・・・・・・・・・・障壁層(配位子成分)
BC・・・・・・・・・・伝導帯のエネルギー準位
BV・・・・・・・・・・価電子帯のエネルギー準位
Ef・・・・・・・・・・フェルミ準位
h・・・・・・・・・・・ホール
e・・・・・・・・・・・電子
ΔE、ΔE1、ΔE2・・・エネルギー準位の差
21・・・・・・・・・・ガラス基板
23・・・・・・・・・・透明導電膜
25・・・・・・・・・・酸化亜鉛膜
27・・・・・・・・・・導体膜
Claims (7)
- p/n接合された2つの半導体層を光電変換層として備えており、
前記2つの半導体層のうち少なくとも一方の前記半導体層が量子ドット集積膜であるとともに、該量子ドット集積膜がエネルギー準位の異なる2層以上の量子ドット層を備えていることを特徴とする光電変換装置。 - 前記量子ドット集積膜がp型であるとき、前記p/n接合の面に近い方に、価電子帯のエネルギー準位BVとフェルミ準位Efの差が大きな量子ドット層が配置されていることを特徴とする請求項1に記載の光電変換装置。
- 前記量子ドット集積膜がn型であるとき、前記p/n接合の面に近い方に、伝導帯のエネルギー準位BCとフェルミ準位Efの差が大きな量子ドット層が配置されていることを特徴とする請求項1に記載の光電変換装置。
- 前記量子ドット層は、量子ドットと、その周囲に配置された障壁層とを有し、2層以上の前記量子ドット層の間で、前記障壁層の成分および厚さのうち少なくとも一方が異なっていることを特徴とする請求項1乃至3のうちいずれかに記載の光電変換装置。
- 2層以上の前記量子ドット層における前記障壁層の成分が無機質であることを特徴とする請求項4に記載の光電変換装置。
- 2層以上の前記量子ドット層における前記障壁層の成分が有機質であることを特徴とする請求項4に記載の光電変換装置。
- 前記量子ドットが、該量子ドットの主成分とは異なる元素を含んでおり、該元素は、2層以上の前記量子ドット層の間で前記元素の原子価および前記元素の濃度のうち少なくとも一方が異なっていることを特徴とする請求項1乃至6のうちいずれかに記載の光電変換装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015169294 | 2015-08-28 | ||
JP2015169294 | 2015-08-28 | ||
PCT/JP2016/075030 WO2017038698A1 (ja) | 2015-08-28 | 2016-08-26 | 光電変換装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2017038698A1 true JPWO2017038698A1 (ja) | 2017-10-19 |
JP6298223B2 JP6298223B2 (ja) | 2018-03-20 |
Family
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017536988A Active JP6298223B2 (ja) | 2015-08-28 | 2016-08-26 | 光電変換装置 |
Country Status (4)
Country | Link |
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US (1) | US10256355B2 (ja) |
JP (1) | JP6298223B2 (ja) |
CN (1) | CN108028287B (ja) |
WO (1) | WO2017038698A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4343858A1 (en) | 2021-05-21 | 2024-03-27 | Panasonic Intellectual Property Management Co., Ltd. | Photoelectric conversion element and imaging device |
KR20230013993A (ko) | 2021-07-20 | 2023-01-27 | 삼성전자주식회사 | 광전 소자 및 이를 포함하는 전자 장치 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2012501536A (ja) * | 2008-08-28 | 2012-01-19 | コリア リサーチ インスティチュート オブ スタンダーズ アンド サイエンス | 量子ドット太陽光素子及びその製造方法 |
JP2014165198A (ja) * | 2013-02-21 | 2014-09-08 | Kyocera Corp | 太陽電池 |
US20140261650A1 (en) * | 2013-03-13 | 2014-09-18 | Samsung Electronics Co., Ltd. | Solar cell |
JP2014179368A (ja) * | 2013-03-13 | 2014-09-25 | Kyocera Corp | 太陽電池 |
WO2015076300A1 (ja) * | 2013-11-19 | 2015-05-28 | 京セラ株式会社 | 光電変換層および光電変換装置 |
Family Cites Families (10)
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US7335908B2 (en) | 2002-07-08 | 2008-02-26 | Qunano Ab | Nanostructures and methods for manufacturing the same |
JP5126879B2 (ja) * | 2007-07-13 | 2013-01-23 | 独立行政法人海洋研究開発機構 | 新規dna断片およびそれを含む組換えベクター、それらによって形質転換された形質転換体、ならびにそれらの利用 |
WO2009142677A2 (en) * | 2008-03-24 | 2009-11-26 | The Board Of Trustees Of The Leland Stanford Junior University | Quantum dot solar cell with quantum dot bandgap gradients |
EP2395565B1 (en) | 2009-02-09 | 2017-04-19 | Toyota Jidosha Kabushiki Kaisha | Solar cell |
JP5364526B2 (ja) * | 2009-10-02 | 2013-12-11 | 三菱重工業株式会社 | 赤外線検出素子、赤外線検出装置及び赤外線検出素子の製造方法 |
JP2011249579A (ja) | 2010-05-27 | 2011-12-08 | Fujifilm Corp | 太陽電池およびその製造方法 |
KR101758866B1 (ko) * | 2010-06-18 | 2017-07-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 광전 변환 장치 및 광전 변환 장치용 에너지 변환층 |
JP2013229378A (ja) | 2012-04-24 | 2013-11-07 | Kyocera Corp | 太陽電池 |
US9059092B2 (en) * | 2013-09-17 | 2015-06-16 | Taiwan Semiconductor Manufacturing Company Limited | Chemical dielectric formation for semiconductor device fabrication |
KR20170044791A (ko) * | 2015-10-15 | 2017-04-26 | 희성전자 주식회사 | 양자점, 고분자 수지, 양자점 시트 및 이를 포함하는 백라이트 유닛 |
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2016
- 2016-08-26 US US15/755,196 patent/US10256355B2/en not_active Expired - Fee Related
- 2016-08-26 CN CN201680049221.5A patent/CN108028287B/zh not_active Expired - Fee Related
- 2016-08-26 JP JP2017536988A patent/JP6298223B2/ja active Active
- 2016-08-26 WO PCT/JP2016/075030 patent/WO2017038698A1/ja active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012501536A (ja) * | 2008-08-28 | 2012-01-19 | コリア リサーチ インスティチュート オブ スタンダーズ アンド サイエンス | 量子ドット太陽光素子及びその製造方法 |
JP2014165198A (ja) * | 2013-02-21 | 2014-09-08 | Kyocera Corp | 太陽電池 |
US20140261650A1 (en) * | 2013-03-13 | 2014-09-18 | Samsung Electronics Co., Ltd. | Solar cell |
JP2014179368A (ja) * | 2013-03-13 | 2014-09-25 | Kyocera Corp | 太陽電池 |
WO2015076300A1 (ja) * | 2013-11-19 | 2015-05-28 | 京セラ株式会社 | 光電変換層および光電変換装置 |
Also Published As
Publication number | Publication date |
---|---|
CN108028287A (zh) | 2018-05-11 |
JP6298223B2 (ja) | 2018-03-20 |
US20180240921A1 (en) | 2018-08-23 |
US10256355B2 (en) | 2019-04-09 |
CN108028287B (zh) | 2020-11-27 |
WO2017038698A1 (ja) | 2017-03-09 |
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