JP2013530539A - Inpの強制ドーピングによる高濃度pドープ量子ドット太陽電池及び製造方法 - Google Patents
Inpの強制ドーピングによる高濃度pドープ量子ドット太陽電池及び製造方法 Download PDFInfo
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 81
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 239000004065 semiconductor Substances 0.000 claims abstract description 117
- 229910021480 group 4 element Inorganic materials 0.000 claims abstract description 79
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000011574 phosphorus Substances 0.000 claims abstract description 6
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- 229910052738 indium Inorganic materials 0.000 claims abstract description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract 2
- 238000010438 heat treatment Methods 0.000 claims description 31
- 239000010409 thin film Substances 0.000 claims description 26
- 150000004767 nitrides Chemical class 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000002131 composite material Substances 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 238000005240 physical vapour deposition Methods 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 229910021478 group 5 element Inorganic materials 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 17
- 239000012535 impurity Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- -1 InP compound Chemical class 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
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Abstract
【解決手段】本発明の製造方法は、基板の上部に4族元素及びInPを含む半導体層を形成した後、前記半導体層が形成された基板を熱処理し、In(Indium)を除去し、P(phosphorus)がドープされた4族元素量子ドットであるn型半導体量子ドットを形成する量子ドット形成段階を含む特徴がある。
【選択図】図3
Description
120 複合積層層 121 媒質層 122、123 半導体層
130 量子ドット層 131 媒質 132 量子ドット
133 4族元素層 134 表面酸化物層
210 透明伝導膜 310、320 電極
Claims (13)
- 半導体量子ドット増感型太陽電池の製造方法において、
基板の上部に4族元素及びInPを含む半導体層を形成した後、前記半導体層が形成された基板を熱処理してIn(Indium)を除去し、P(phosphorus)がドープされた4族元素量子ドットであるn型半導体量子ドットを形成する量子ドット形成段階を含むことを特徴とする量子ドット太陽電池の製造方法。 - 前記半導体層は、4族元素または4族元素の化合物に前記InPが物理的にドープされることを特徴とする請求項1に記載の量子ドット太陽電池の製造方法。
- 前記半導体層は、InPがドープされた非晶質相(amorphous phase)を含むことを特徴とする請求項1に記載の量子ドット太陽電池の製造方法。
- 前記半導体層は、InPがドープされた4族元素の薄膜、InPがドープされた4族元素窒化物の薄膜、InPがドープされた4族元素酸化物の薄膜、またはこれらの積層薄膜であることを特徴とする請求項1に記載の量子ドット太陽電池の製造方法。
- 前記4族元素及びInPを含む半導体層は、物理的蒸着により形成されることを特徴とする請求項1に記載の量子ドット太陽電池の製造方法。
- 前記物理的蒸着は、スパッタリング(sputtering)であり、前記スパッタリングは、4族元素のターゲットとInPターゲットと、をイオンビームを用いて同時スパッタリングして蒸着することを特徴とする請求項5に記載の量子ドット太陽電池の製造方法。
- a)p型半導体基板の上部に媒質層と前記半導体層を交互に積層して複合積層層を形成する段階と、
b)前記複合積層層を熱処理して半導体窒化物、半導体酸化物またはこれらの混合物である媒質内P(phosphorus)ドープされた半導体量子ドットを形成する段階と、
c)水素雰囲気で熱処理して前記P(phosphorus)ドープされた半導体量子ドットの非結合電子を水素と結合させる段階と、
を含んで製造されることを特徴とする請求項1に記載の量子ドット太陽電池の製造方法。 - 前記半導体層は、InPがドープされた4族元素の薄膜、InPがドープされた4族元素窒化物の薄膜、InPがドープされた4族元素酸化物の薄膜、またはこれらの積層薄膜であり、前記媒質層は、前記半導体層と独立して4族元素の窒化物、4族元素の酸化物またはこれらの混合物であることを特徴とする請求項7に記載の量子ドット太陽電池の製造方法。
- 前記媒質層及び前記半導体層の厚さは、互いに独立して0.5nm〜5nmの厚さであることを特徴とする請求項7に記載の量子ドット太陽電池の製造方法。
- 前記量子ドット形成段階以後、前記基板及び前記n型半導体量子ドットを挟んで互いに対向し、少なくとも一電極は透明電極である二つの電極を形成する電極形成段階がさらに実行されることを特徴とする請求項1または7に記載の量子ドット太陽電池の製造方法。
- 前記n型半導体量子ドットと前記透明電極との間に3族または5族元素がドープされた多結晶体の4族半導体層である多結晶半導体層をさらに形成することを特徴とする請求項10に記載の量子ドット太陽電池の製造方法。
- 前記熱処理は、900℃〜1150℃で実行されることを特徴とする請求項1に記載の量子ドット太陽電池の製造方法。
- 前記4族元素は、Si及びGeから一つ以上選択された元素であることを特徴とする請求項1に記載の量子ドット太陽電池の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0060404 | 2010-06-25 | ||
KR1020100060404A KR101103330B1 (ko) | 2010-06-25 | 2010-06-25 | InP의 강제도핑에 의한 고농도 P 도핑 양자점 태양전지 및 제조방법 |
PCT/KR2010/004307 WO2011162433A1 (ko) | 2010-06-25 | 2010-07-02 | Inp의 강제도핑에 의한 고농도 p 도핑 양자점 태양전지 및 제조방법 |
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JP2013530539A true JP2013530539A (ja) | 2013-07-25 |
JP5603490B2 JP5603490B2 (ja) | 2014-10-08 |
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US (1) | US8865513B2 (ja) |
JP (1) | JP5603490B2 (ja) |
KR (1) | KR101103330B1 (ja) |
CN (1) | CN102959722B (ja) |
DE (1) | DE112010005699T5 (ja) |
WO (1) | WO2011162433A1 (ja) |
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JP2016100576A (ja) * | 2014-11-26 | 2016-05-30 | 京セラ株式会社 | 光電変換装置 |
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WO2013054431A1 (ja) * | 2011-10-14 | 2013-04-18 | 富士通株式会社 | 半導体装置及びその製造方法、電源装置 |
KR101257492B1 (ko) * | 2011-10-17 | 2013-04-24 | 경희대학교 산학협력단 | Sb 또는 InP 도핑을 이용한 실리콘 양자점 태양전지 및 그 제조방법 |
DE102013219561A1 (de) * | 2013-09-27 | 2015-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Herstellen einer photovoltaischen Solarzelle mit zumindest einem Heteroübergang |
CN104810159B (zh) * | 2015-05-12 | 2017-04-19 | 中国工程物理研究院材料研究所 | 一种锡掺杂磷化铟量子点敏化太阳能电池的制备方法 |
KR101701192B1 (ko) * | 2016-12-05 | 2017-02-01 | 인천대학교 산학협력단 | 투명 광전 소자 및 그 제조 방법 |
KR101917300B1 (ko) * | 2016-12-15 | 2018-11-13 | 한국표준과학연구원 | 실리콘 양자점 정밀제어 및 활성화에 의한 광활성층 및 이의 제조방법 |
KR102491856B1 (ko) * | 2017-12-18 | 2023-01-27 | 삼성전자주식회사 | 복수의 양자점층을 포함하는 광전 소자 |
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CN102959722A (zh) | 2013-03-06 |
CN102959722B (zh) | 2015-10-07 |
US8865513B2 (en) | 2014-10-21 |
KR20120000198A (ko) | 2012-01-02 |
DE112010005699T5 (de) | 2013-04-25 |
KR101103330B1 (ko) | 2012-01-11 |
US20130122640A1 (en) | 2013-05-16 |
JP5603490B2 (ja) | 2014-10-08 |
WO2011162433A1 (ko) | 2011-12-29 |
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