WO2013069492A1 - バイパスダイオード - Google Patents
バイパスダイオード Download PDFInfo
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- WO2013069492A1 WO2013069492A1 PCT/JP2012/077869 JP2012077869W WO2013069492A1 WO 2013069492 A1 WO2013069492 A1 WO 2013069492A1 JP 2012077869 W JP2012077869 W JP 2012077869W WO 2013069492 A1 WO2013069492 A1 WO 2013069492A1
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- Prior art keywords
- bypass diode
- oxide film
- semiconductor substrate
- electrode
- disposed
- Prior art date
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- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 description 20
- 238000000034 method Methods 0.000 description 19
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66128—Planar diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/044—PV modules or arrays of single PV cells including bypass diodes
- H01L31/0443—PV modules or arrays of single PV cells including bypass diodes comprising bypass diodes integrated or directly associated with the devices, e.g. bypass diodes integrated or formed in or on the same substrate as the photovoltaic cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Sustainable Energy (AREA)
Abstract
Description
特開平6-53377号公報(特許文献1)には、宇宙空間で動作する人工衛星や宇宙ステーションの電源に使用される太陽電池においてブロッキングダイオードまたはバイパスダイオードとして用いられるダイオードの一例が記載されている。
図12~図20を参照して、従来技術に基づくバイパスダイオードの製造方法について説明する。これは、特許文献2に記載されたバイパスダイオードの製造方法に相当する。
図1、図2を参照して、本発明に基づく実施の形態1におけるバイパスダイオードについて説明する。図1に示すように、本実施の形態におけるバイパスダイオード201は、互いに対向する第1表面31および第2表面32を有する半導体基板1と、第1表面31に配置された第1導電型電極としてのp電極4および第2導電型電極としてのn電極5と、第2表面32に配置され、半導体基板1と同じ極性を有する裏面電極7と、第1表面31に配置された第1酸化膜12aと、第2表面32に配置された第2酸化膜12bとを備える。
図12~図17、図3~図5を参照して、本発明に基づく実施の形態2におけるバイパスダイオードの製造方法について説明する。ここでは、実施の形態1で示したバイパスダイオード201を製造するものとして説明する。
図6を参照して、本発明に基づく実施の形態3におけるバイパスダイオードについて説明する。本実施の形態におけるバイパスダイオードは、実施の形態1の変形例に相当する。以下、図6~図8はバイパスダイオードを下方から見た図である。すなわち、バイパスダイオードを第2表面の側から見たところである。本来は第2酸化膜12bは裏面電極7によって覆い隠されているが、ここでは説明の便宜のために、裏面電極7を取り去った状態を表示している。ここでは説明の便宜のために外形を簡略化して正方形で表示しているが、実際にはバイパスダイオードの外形は正方形とは限らない。
なお、今回開示した上記実施の形態はすべての点で例示であって制限的なものではない。本発明の範囲は上記した説明ではなくて請求の範囲によって示され、請求の範囲と均等の意味および範囲内でのすべての変更を含むものである。
Claims (7)
- 互いに対向する第1表面および第2表面を有する半導体基板と、
前記第1表面に配置された第1導電型電極および第2導電型電極と、
前記第2表面に配置され、前記半導体基板と同じ極性を有する裏面電極と、
前記第1表面に配置された第1酸化膜と、
前記第2表面に配置された第2酸化膜とを備える、バイパスダイオード。 - 前記第1酸化膜と前記第2酸化膜とは前記半導体基板を挟んで対称に配置されている、請求項1に記載のバイパスダイオード。
- 前記第2酸化膜は格子状に配置されている、請求項1に記載のバイパスダイオード。
- 前記第2酸化膜はストライプ状に配置されている、請求項1に記載のバイパスダイオード。
- 前記第2酸化膜は各々孤立した複数の基本形状が規則的に配置されたものである、請求項1に記載のバイパスダイオード。
- 前記第1表面のうち前記第1酸化膜で覆われていない部分の面積に対して、前記第2表面のうち前記第2酸化膜で覆われていない部分の面積の比率が20%以上である、請求項1から5のいずれかに記載のバイパスダイオード。
- 前記半導体基板の厚みが100μm以下である、請求項1から6のいずれかに記載のバイパスダイオード。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/357,318 US9214573B2 (en) | 2011-11-09 | 2012-10-29 | Bypass diode |
DE112012004680.3T DE112012004680T5 (de) | 2011-11-09 | 2012-10-29 | Bypass-Diode |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-245373 | 2011-11-09 | ||
JP2011245373A JP5868661B2 (ja) | 2011-11-09 | 2011-11-09 | バイパスダイオードおよびその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013069492A1 true WO2013069492A1 (ja) | 2013-05-16 |
Family
ID=48289870
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/077869 WO2013069492A1 (ja) | 2011-11-09 | 2012-10-29 | バイパスダイオード |
Country Status (4)
Country | Link |
---|---|
US (1) | US9214573B2 (ja) |
JP (1) | JP5868661B2 (ja) |
DE (1) | DE112012004680T5 (ja) |
WO (1) | WO2013069492A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3084839A4 (en) * | 2013-12-20 | 2016-12-21 | Sunpower Corp | BUILT-IN BYPASS DIODE |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020198177A1 (en) | 2019-03-22 | 2020-10-01 | Northrop Grumman Innovation Systems, Inc | Solar panel module |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04278589A (ja) * | 1991-03-06 | 1992-10-05 | Fujitsu Ltd | 赤外線検知素子の製造方法 |
JP2004056024A (ja) * | 2002-07-24 | 2004-02-19 | Fuji Electric Holdings Co Ltd | 薄膜太陽電池およびその製造方法 |
JP2007096040A (ja) * | 2005-09-29 | 2007-04-12 | Sharp Corp | 太陽電池の製造方法および太陽電池 |
JP2009158697A (ja) * | 2007-12-26 | 2009-07-16 | Sharp Corp | 太陽電池セル用バイパスダイオードおよびその製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3280075B2 (ja) | 1992-07-31 | 2002-04-30 | シャープ株式会社 | 太陽電池パネル用ダイオード |
JP2004186662A (ja) * | 2002-10-08 | 2004-07-02 | Sony Corp | マスク、マスクブランクスおよびそれらの製造方法 |
US20040224243A1 (en) | 2003-05-08 | 2004-11-11 | Sony Corporation | Mask, mask blank, and methods of producing these |
NO20061668L (no) * | 2006-04-12 | 2007-10-15 | Renewable Energy Corp | Solcelle og fremgangsmate for fremstilling av samme |
JP2009020468A (ja) * | 2007-07-13 | 2009-01-29 | Brother Ind Ltd | マイクロミラーの製造方法 |
JP2011176097A (ja) * | 2010-02-24 | 2011-09-08 | Sumco Corp | 貼り合わせsoiウェーハ及びその製造方法 |
-
2011
- 2011-11-09 JP JP2011245373A patent/JP5868661B2/ja active Active
-
2012
- 2012-10-29 US US14/357,318 patent/US9214573B2/en not_active Expired - Fee Related
- 2012-10-29 WO PCT/JP2012/077869 patent/WO2013069492A1/ja active Application Filing
- 2012-10-29 DE DE112012004680.3T patent/DE112012004680T5/de not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04278589A (ja) * | 1991-03-06 | 1992-10-05 | Fujitsu Ltd | 赤外線検知素子の製造方法 |
JP2004056024A (ja) * | 2002-07-24 | 2004-02-19 | Fuji Electric Holdings Co Ltd | 薄膜太陽電池およびその製造方法 |
JP2007096040A (ja) * | 2005-09-29 | 2007-04-12 | Sharp Corp | 太陽電池の製造方法および太陽電池 |
JP2009158697A (ja) * | 2007-12-26 | 2009-07-16 | Sharp Corp | 太陽電池セル用バイパスダイオードおよびその製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3084839A4 (en) * | 2013-12-20 | 2016-12-21 | Sunpower Corp | BUILT-IN BYPASS DIODE |
JP2016541105A (ja) * | 2013-12-20 | 2016-12-28 | サンパワー コーポレイション | 内蔵バイパスダイオード |
US11967655B2 (en) | 2013-12-20 | 2024-04-23 | Maxeon Solar Pte. Ltd. | Built-in bypass diode |
Also Published As
Publication number | Publication date |
---|---|
JP2013102073A (ja) | 2013-05-23 |
DE112012004680T5 (de) | 2014-11-13 |
US20140353806A1 (en) | 2014-12-04 |
JP5868661B2 (ja) | 2016-02-24 |
US9214573B2 (en) | 2015-12-15 |
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