WO2009075183A1 - 発光ダイオード及びその製造方法 - Google Patents

発光ダイオード及びその製造方法 Download PDF

Info

Publication number
WO2009075183A1
WO2009075183A1 PCT/JP2008/071296 JP2008071296W WO2009075183A1 WO 2009075183 A1 WO2009075183 A1 WO 2009075183A1 JP 2008071296 W JP2008071296 W JP 2008071296W WO 2009075183 A1 WO2009075183 A1 WO 2009075183A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting diode
semiconductor layer
electrode
emitting section
Prior art date
Application number
PCT/JP2008/071296
Other languages
English (en)
French (fr)
Inventor
Ryouichi Takeuchi
Original Assignee
Showa Denko K.K.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko K.K. filed Critical Showa Denko K.K.
Priority to CN200880120485.0A priority Critical patent/CN101897045B/zh
Priority to US12/747,282 priority patent/US20100258826A1/en
Publication of WO2009075183A1 publication Critical patent/WO2009075183A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

　本発明の発光ダイオード（１）は、発光層（２）を含む発光部（３）と、半導体層（４）を介して発光部（３）に接合された基板（５）と、発光部（３）の上面に第１の電極（６）と、基板（５）の底面に第２の電極（７）と、半導体層（４）上で発光部（３）の外周にオーミック電極（８）とを備え、発光部（３）の外周において、オーミック電極（８）と基板（５）とを導通させ、かつ半導体層（４）の厚さ方向に貫通する貫通電極（９）を半導体層（４）中に備え、発光層に流れる電流が均一であり、発光層からの光取り出し効率が高く、高輝度の発光ダイオードを提供する。
PCT/JP2008/071296 2007-12-12 2008-11-25 発光ダイオード及びその製造方法 WO2009075183A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200880120485.0A CN101897045B (zh) 2007-12-12 2008-11-25 发光二极管及其制造方法
US12/747,282 US20100258826A1 (en) 2007-12-12 2008-11-25 Light emitting diode and method for manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007320645A JP4974867B2 (ja) 2007-12-12 2007-12-12 発光ダイオード及びその製造方法
JP2007-320645 2007-12-12

Publications (1)

Publication Number Publication Date
WO2009075183A1 true WO2009075183A1 (ja) 2009-06-18

Family

ID=40755426

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071296 WO2009075183A1 (ja) 2007-12-12 2008-11-25 発光ダイオード及びその製造方法

Country Status (5)

Country Link
US (1) US20100258826A1 (ja)
JP (1) JP4974867B2 (ja)
CN (1) CN101897045B (ja)
TW (1) TWI383520B (ja)
WO (1) WO2009075183A1 (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4659926B2 (ja) 2009-04-02 2011-03-30 パナソニック株式会社 窒化物系半導体素子およびその製造方法
WO2010113237A1 (ja) 2009-04-03 2010-10-07 パナソニック株式会社 窒化物系半導体素子およびその製造方法
KR101654340B1 (ko) * 2009-12-28 2016-09-06 서울바이오시스 주식회사 발광 다이오드
JP4909448B2 (ja) * 2010-04-01 2012-04-04 パナソニック株式会社 窒化物系半導体素子およびその製造方法
CN102598320B (zh) * 2010-04-02 2016-01-13 松下知识产权经营株式会社 氮化物类半导体元件
JP5801542B2 (ja) * 2010-07-13 2015-10-28 昭和電工株式会社 発光ダイオード及び発光ダイオードランプ
US20120241718A1 (en) * 2011-03-21 2012-09-27 Walsin Lihwa Corporation High performance light emitting diode
JP2013187209A (ja) * 2012-03-06 2013-09-19 Sanken Electric Co Ltd 半導体発光装置
TWI570350B (zh) * 2013-08-29 2017-02-11 晶元光電股份有限公司 發光裝置
JP6501200B2 (ja) * 2015-09-17 2019-04-17 豊田合成株式会社 発光素子
CN106449919B (zh) * 2016-11-30 2018-10-12 东海县晶瑞达石英制品有限公司 一种长寿命的led芯片及其制作方法
CN107195747B (zh) * 2017-06-01 2024-03-26 华南理工大学 一种微米尺寸倒装led芯片及其制备方法
JP7216270B2 (ja) * 2018-09-28 2023-02-01 日亜化学工業株式会社 半導体発光素子
KR102147443B1 (ko) 2018-10-25 2020-08-28 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
CN110459657A (zh) * 2019-07-31 2019-11-15 华南理工大学 一种具有环状类y型电极的微尺寸led器件及制备方法
TWI760007B (zh) * 2020-12-14 2022-04-01 晶呈科技股份有限公司 磁性發光二極體晶粒移轉之對準模組及其對準方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07111339A (ja) * 1993-10-12 1995-04-25 Sumitomo Electric Ind Ltd 面発光型半導体発光装置
JP2002084001A (ja) * 2000-06-21 2002-03-22 Showa Denko Kk Ｉｉｉ族窒化物半導体発光ダイオード、発光ダイオードランプ、光源、ｉｉｉ族窒化物半導体発光ダイオード用電極およびその製造方法
JP2007287849A (ja) * 2006-04-14 2007-11-01 Nichia Chem Ind Ltd 半導体発光素子

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6229160B1 (en) * 1997-06-03 2001-05-08 Lumileds Lighting, U.S., Llc Light extraction from a semiconductor light-emitting device via chip shaping
US6512248B1 (en) * 1999-10-19 2003-01-28 Showa Denko K.K. Semiconductor light-emitting device, electrode for the device, method for fabricating the electrode, LED lamp using the device, and light source using the LED lamp
JP2002111052A (ja) * 2000-09-28 2002-04-12 Toshiba Corp 半導体発光素子及びその製造方法
EP1460694A1 (en) * 2001-11-19 2004-09-22 Sanyo Electric Co., Ltd. Compound semiconductor light emitting device and its manufacturing method
AU2003252359A1 (en) * 2002-08-01 2004-02-23 Nichia Corporation Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same
CN1256777C (zh) * 2002-10-17 2006-05-17 璨圆光电股份有限公司 氮化镓系发光二极管的结构及其制造方法
TW578318B (en) * 2002-12-31 2004-03-01 United Epitaxy Co Ltd Light emitting diode and method of making the same
TWI231054B (en) * 2003-03-13 2005-04-11 Showa Denko Kk Light-emitting diode and its manufacturing method
CN100388517C (zh) * 2004-07-08 2008-05-14 夏普株式会社 氮化物系化合物半导体发光元件及其制造方法
JP2006066518A (ja) * 2004-08-25 2006-03-09 Sharp Corp 半導体発光素子および半導体発光素子の製造方法
TWI251357B (en) * 2005-06-21 2006-03-11 Epitech Technology Corp Light-emitting diode and method for manufacturing the same
TWI255055B (en) * 2005-06-29 2006-05-11 Chunghwa Picture Tubes Ltd Light emitting diode and method for improving luminescence efficiency thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07111339A (ja) * 1993-10-12 1995-04-25 Sumitomo Electric Ind Ltd 面発光型半導体発光装置
JP2002084001A (ja) * 2000-06-21 2002-03-22 Showa Denko Kk Ｉｉｉ族窒化物半導体発光ダイオード、発光ダイオードランプ、光源、ｉｉｉ族窒化物半導体発光ダイオード用電極およびその製造方法
JP2007287849A (ja) * 2006-04-14 2007-11-01 Nichia Chem Ind Ltd 半導体発光素子

Also Published As

Publication number Publication date
JP2009146980A (ja) 2009-07-02
TWI383520B (zh) 2013-01-21
CN101897045A (zh) 2010-11-24
US20100258826A1 (en) 2010-10-14
TW200939542A (en) 2009-09-16
JP4974867B2 (ja) 2012-07-11
CN101897045B (zh) 2012-02-29

Similar Documents

Publication Publication Date Title
WO2009075183A1 (ja) 発光ダイオード及びその製造方法
TW200709474A (en) Light emitting diode employing an array of nonorods and method of fabricating the same
TW200733432A (en) Light emitting diode with ITO layer and method for fabricating the same
TW200746468A (en) Semiconductor light-emitting device and method of manufacturing the same
WO2009044698A1 (ja) 半導体発光素子および半導体発光素子の製造方法
TW200729543A (en) Light emitting device and method of forming the same
WO2009008100A1 (ja) 有機エレクトロルミネッセンス素子用材料及びそれを用いた有機エレクトロルミネッセンス素子
TWI266435B (en) Nitride-based compound semiconductor light emitting device and fabricating method thereof
TW200711178A (en) Light-emitting element and manufacturing method thereof
TW200715601A (en) Light emitting diode chip
TW200703706A (en) Light emitting diode and manufacturing method thereof
EP2180532A3 (en) Semiconductor light emitting device
TW200742127A (en) Light-emitting diode and method for fabrication thereof
TW200802934A (en) Light emitting diode and method manufacturing the same
TW200746492A (en) White-light organic light-emitting diode (OLED) and its fabrication method
TW200746455A (en) Group III nitride semiconductor light-emitting device
TW200701503A (en) Light-emitting diode and method for manufacturing the same
WO2009061098A3 (en) Light emitting device and method of fabricating the same
WO2009007919A3 (en) Organic light emitting diodes having improved optical out-coupling
TW200717851A (en) Light emitting diode
TWI256157B (en) Method for manufacturing light-emitting diode
TW200725948A (en) Gallium nitride-based compound semiconductor light-emitting device and production method thereof
TW200640037A (en) Structure of light-emitting diode and manufacturing method thereof
TW200633275A (en) Semiconductor light emitting diode and method of manufacturing same
WO2009091153A3 (en) Iii-nitride semiconductor light emitting device and method for manufacturing the same

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880120485.0

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08860482

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12747282

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08860482

Country of ref document: EP

Kind code of ref document: A1