WO2009120044A3 - 발광소자 및 그 제조방법 - Google Patents

발광소자 및 그 제조방법 Download PDF

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Publication number
WO2009120044A3
WO2009120044A3 PCT/KR2009/001582 KR2009001582W WO2009120044A3 WO 2009120044 A3 WO2009120044 A3 WO 2009120044A3 KR 2009001582 W KR2009001582 W KR 2009001582W WO 2009120044 A3 WO2009120044 A3 WO 2009120044A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
emitting element
light
production method
method therefor
Prior art date
Application number
PCT/KR2009/001582
Other languages
English (en)
French (fr)
Other versions
WO2009120044A2 (ko
Inventor
송준오
Original Assignee
Song June O
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020080028669A external-priority patent/KR101499953B1/ko
Priority claimed from KR1020080028882A external-priority patent/KR101526566B1/ko
Application filed by Song June O filed Critical Song June O
Priority to CN2009801111386A priority Critical patent/CN102037575B/zh
Priority to US12/934,057 priority patent/US8373152B2/en
Priority to EP09725283.7A priority patent/EP2259346B1/en
Publication of WO2009120044A2 publication Critical patent/WO2009120044A2/ko
Publication of WO2009120044A3 publication Critical patent/WO2009120044A3/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

실시예에 따른 발광소자는 지지 기판; 상기 지지 기판 상에 제2 전극층; 상기 지지 기판 상에 전류 퍼짐층; 싱기 제2 전극층 및 전류 퍼짐층 상에 제2 도전형의 반도체층; 상기 제2 도전형의 반도체층 상에 활성층; 상기 활성층 상에 제1 도전형의 반도체층; 및 상기 제1 도전형의 반도체층 상에 제1 전극층을 포함한다.
PCT/KR2009/001582 2008-03-27 2009-03-27 발광소자 및 그 제조방법 WO2009120044A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2009801111386A CN102037575B (zh) 2008-03-27 2009-03-27 发光元件及其制造方法
US12/934,057 US8373152B2 (en) 2008-03-27 2009-03-27 Light-emitting element and a production method therefor
EP09725283.7A EP2259346B1 (en) 2008-03-27 2009-03-27 Light-emitting element and a production method therefor

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2008-0028669 2008-03-27
KR1020080028669A KR101499953B1 (ko) 2008-03-27 2008-03-27 수직구조 그룹 3족 질화물계 반도체 발광다이오드 소자 및제조방법
KR10-2008-0028882 2008-03-28
KR1020080028882A KR101526566B1 (ko) 2008-03-28 2008-03-28 수직구조 그룹 3족 질화물계 반도체 발광다이오드 소자 및제조방법

Publications (2)

Publication Number Publication Date
WO2009120044A2 WO2009120044A2 (ko) 2009-10-01
WO2009120044A3 true WO2009120044A3 (ko) 2010-01-14

Family

ID=41114476

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/001582 WO2009120044A2 (ko) 2008-03-27 2009-03-27 발광소자 및 그 제조방법

Country Status (4)

Country Link
US (1) US8373152B2 (ko)
EP (1) EP2259346B1 (ko)
CN (1) CN102037575B (ko)
WO (1) WO2009120044A2 (ko)

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KR101880445B1 (ko) * 2011-07-14 2018-07-24 엘지이노텍 주식회사 발광소자, 발광소자 제조방법, 발광소자 패키지, 및 라이트 유닛
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KR102108196B1 (ko) * 2013-04-05 2020-05-08 서울바이오시스 주식회사 성장 기판이 분리된 자외선 발광소자 및 그 제조 방법
JP2015060886A (ja) * 2013-09-17 2015-03-30 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
TWI597863B (zh) * 2013-10-22 2017-09-01 晶元光電股份有限公司 發光元件及其製造方法
CN105355740B (zh) * 2015-10-19 2017-09-22 天津三安光电有限公司 发光二极管及其制作方法
CN105355732B (zh) * 2015-12-11 2017-09-15 厦门乾照光电股份有限公司 一种倒装蓝绿发光二极管芯片的制备方法
DE102017104719A1 (de) * 2017-03-07 2018-09-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper und Halbleiterchip
WO2020061750A1 (zh) * 2018-09-25 2020-04-02 天津三安光电有限公司 一种发光二极管元件
CN109545931B (zh) * 2018-12-17 2024-07-30 佛山市国星半导体技术有限公司 一种垂直结构led晶圆及剥离方法

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Also Published As

Publication number Publication date
EP2259346B1 (en) 2019-07-03
US8373152B2 (en) 2013-02-12
EP2259346A4 (en) 2014-08-20
CN102037575B (zh) 2013-04-10
EP2259346A2 (en) 2010-12-08
US20110062412A1 (en) 2011-03-17
CN102037575A (zh) 2011-04-27
WO2009120044A2 (ko) 2009-10-01

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