WO2009131319A3 - 반도체 발광소자 - Google Patents

반도체 발광소자 Download PDF

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Publication number
WO2009131319A3
WO2009131319A3 PCT/KR2009/001806 KR2009001806W WO2009131319A3 WO 2009131319 A3 WO2009131319 A3 WO 2009131319A3 KR 2009001806 W KR2009001806 W KR 2009001806W WO 2009131319 A3 WO2009131319 A3 WO 2009131319A3
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting device
semiconductor light
conductive semiconductor
semiconductor layer
Prior art date
Application number
PCT/KR2009/001806
Other languages
English (en)
French (fr)
Other versions
WO2009131319A2 (ko
Inventor
정환희
Original Assignee
엘지이노텍주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍주식회사 filed Critical 엘지이노텍주식회사
Priority to JP2011504918A priority Critical patent/JP5476367B2/ja
Priority to EP13170652.5A priority patent/EP2637223B1/en
Priority to EP09733715.8A priority patent/EP2270880B1/en
Priority to CN2009801139019A priority patent/CN102017196B/zh
Publication of WO2009131319A2 publication Critical patent/WO2009131319A2/ko
Publication of WO2009131319A3 publication Critical patent/WO2009131319A3/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

실시 예는 반도체 발광소자에 관한 것이다. 실시 예에 따른 반도체 발광소자는 제1도전형 반도체층; 상기 제1도전형 반도체층 아래에 활성층; 상기 활성층 아래에 제2도전형 반도체층; 상기 제2도전형 반도체층 아래에 제2전극층; 상기 제2도전형 반도체층과 상기 제2전극층 사이의 적어도 일부에 투광성 전도층을 포함한다.
PCT/KR2009/001806 2008-04-21 2009-04-08 반도체 발광소자 WO2009131319A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011504918A JP5476367B2 (ja) 2008-04-21 2009-04-08 半導体発光素子
EP13170652.5A EP2637223B1 (en) 2008-04-21 2009-04-08 Semiconductor light emitting device
EP09733715.8A EP2270880B1 (en) 2008-04-21 2009-04-08 Semiconductor light emitting device
CN2009801139019A CN102017196B (zh) 2008-04-21 2009-04-08 半导体发光器件

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080036876A KR101007099B1 (ko) 2008-04-21 2008-04-21 반도체 발광소자 및 그 제조방법
KR10-2008-0036876 2008-04-21

Publications (2)

Publication Number Publication Date
WO2009131319A2 WO2009131319A2 (ko) 2009-10-29
WO2009131319A3 true WO2009131319A3 (ko) 2010-01-14

Family

ID=41200377

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/001806 WO2009131319A2 (ko) 2008-04-21 2009-04-08 반도체 발광소자

Country Status (6)

Country Link
US (5) US7947997B2 (ko)
EP (2) EP2637223B1 (ko)
JP (1) JP5476367B2 (ko)
KR (1) KR101007099B1 (ko)
CN (2) CN103400917B (ko)
WO (1) WO2009131319A2 (ko)

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KR101064091B1 (ko) * 2009-02-23 2011-09-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101081278B1 (ko) 2009-10-28 2011-11-08 엘지이노텍 주식회사 발광 소자 및 그 제조방법
KR101020945B1 (ko) 2009-12-21 2011-03-09 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
KR101039946B1 (ko) * 2009-12-21 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
KR101039904B1 (ko) 2010-01-15 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
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KR100974787B1 (ko) 2010-02-04 2010-08-06 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR100986523B1 (ko) * 2010-02-08 2010-10-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100986318B1 (ko) * 2010-02-09 2010-10-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
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EP2445019B1 (en) 2010-10-25 2018-01-24 LG Innotek Co., Ltd. Electrode configuration for a light emitting diode
KR101189081B1 (ko) * 2010-12-16 2012-10-10 엘지이노텍 주식회사 웨이퍼 기판 접합 구조, 이를 포함하는 발광 소자 및 그 제조 방법
US20130187122A1 (en) * 2012-01-19 2013-07-25 Taiwan Semicondutor Manufacturing Company, Ltd. Photonic device having embedded nano-scale structures
KR102008276B1 (ko) * 2012-06-14 2019-08-07 엘지이노텍 주식회사 발광 소자 및 그 제조방법
KR20140027836A (ko) * 2012-08-27 2014-03-07 엘지이노텍 주식회사 발광 소자
JP2014060294A (ja) * 2012-09-18 2014-04-03 Ushio Inc Ｌｅｄ素子及びその製造方法
JP6063220B2 (ja) * 2012-11-21 2017-01-18 スタンレー電気株式会社 発光素子
CN104282813B (zh) * 2013-07-02 2018-04-06 晶元光电股份有限公司 发光元件
KR20160023158A (ko) 2014-08-21 2016-03-03 삼성전자주식회사 광 이용 효율이 향상된 이미지 센서 및 그 제조방법
JP6824501B2 (ja) * 2017-02-08 2021-02-03 ウシオ電機株式会社 半導体発光素子
CN107507920B (zh) * 2017-09-22 2024-05-24 京东方科技集团股份有限公司 有机电致发光二极管、显示基板及其制作方法、显示装置
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Also Published As

Publication number Publication date
US8120053B2 (en) 2012-02-21
US8319244B2 (en) 2012-11-27
CN103400917A (zh) 2013-11-20
JP2011518438A (ja) 2011-06-23
CN103400917B (zh) 2016-02-17
EP2270880A2 (en) 2011-01-05
US20120112233A1 (en) 2012-05-10
US7947997B2 (en) 2011-05-24
JP5476367B2 (ja) 2014-04-23
EP2270880B1 (en) 2013-08-28
EP2637223B1 (en) 2019-03-20
WO2009131319A2 (ko) 2009-10-29
US20110121343A1 (en) 2011-05-26
US8466485B2 (en) 2013-06-18
CN102017196A (zh) 2011-04-13
KR101007099B1 (ko) 2011-01-10
CN102017196B (zh) 2013-11-20
US20090261370A1 (en) 2009-10-22
US20110140158A1 (en) 2011-06-16
EP2270880A4 (en) 2011-11-30
US8022428B2 (en) 2011-09-20
KR20090111225A (ko) 2009-10-26
US20130056771A1 (en) 2013-03-07
EP2637223A3 (en) 2013-11-20
EP2637223A2 (en) 2013-09-11

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