WO2009120011A3 - 발광소자 및 그 제조방법 - Google Patents

발광소자 및 그 제조방법 Download PDF

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Publication number
WO2009120011A3
WO2009120011A3 PCT/KR2009/001500 KR2009001500W WO2009120011A3 WO 2009120011 A3 WO2009120011 A3 WO 2009120011A3 KR 2009001500 W KR2009001500 W KR 2009001500W WO 2009120011 A3 WO2009120011 A3 WO 2009120011A3
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting device
conductive
manufacturing
type semiconductor
Prior art date
Application number
PCT/KR2009/001500
Other languages
English (en)
French (fr)
Other versions
WO2009120011A2 (ko
Inventor
송준오
Original Assignee
Song June O
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Song June O filed Critical Song June O
Priority to US12/934,000 priority Critical patent/US8791480B2/en
Priority to EP09724259.8A priority patent/EP2259344B1/en
Priority to CN2009801111348A priority patent/CN102037574B/zh
Publication of WO2009120011A2 publication Critical patent/WO2009120011A2/ko
Publication of WO2009120011A3 publication Critical patent/WO2009120011A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

실시예에 따른 발광소자는 제1 도전형의 반도체층; 상기 제1 도전형의 반도체층 상에 활성층; 상기 활성층 상에 제2 도전형의 반도체층; 상기 제2 도전형의 반도체층 상에 전류 퍼짐층; 상기 전류 퍼짐층 상에 결합층; 및 상기 결합층 상에 광 추출 구조층을 포함한다.
PCT/KR2009/001500 2008-03-24 2009-03-24 발광소자 및 그 제조방법 WO2009120011A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/934,000 US8791480B2 (en) 2008-03-24 2009-03-24 Light emitting device and manufacturing method thereof
EP09724259.8A EP2259344B1 (en) 2008-03-24 2009-03-24 Light emitting device and manufacturing method for same
CN2009801111348A CN102037574B (zh) 2008-03-24 2009-03-24 发光器件及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0026843 2008-03-24
KR1020080026843A KR101469979B1 (ko) 2008-03-24 2008-03-24 그룹 3족 질화물계 반도체 발광다이오드 소자 및 이의 제조방법

Publications (2)

Publication Number Publication Date
WO2009120011A2 WO2009120011A2 (ko) 2009-10-01
WO2009120011A3 true WO2009120011A3 (ko) 2010-01-14

Family

ID=41114452

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/001500 WO2009120011A2 (ko) 2008-03-24 2009-03-24 발광소자 및 그 제조방법

Country Status (5)

Country Link
US (1) US8791480B2 (ko)
EP (1) EP2259344B1 (ko)
KR (1) KR101469979B1 (ko)
CN (1) CN102037574B (ko)
WO (1) WO2009120011A2 (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100986327B1 (ko) * 2009-12-08 2010-10-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR101181000B1 (ko) 2009-12-29 2012-09-07 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
KR101652792B1 (ko) * 2010-02-18 2016-09-01 삼성전자주식회사 발광 소자 및 그 제조 방법
KR101165259B1 (ko) * 2010-07-08 2012-08-10 포항공과대학교 산학협력단 ＭｇＯ피라미드 구조를 갖는 발광소자 및 그 제조방법
CN102569575A (zh) * 2010-12-22 2012-07-11 上海蓝光科技有限公司 一种发光二极管芯片结构
CN102637799B (zh) * 2011-02-12 2015-01-28 上海蓝光科技有限公司 一种发光二极管芯片结构
DE102011012928A1 (de) * 2011-03-03 2012-09-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Dünnfilm-Halbleiterkörpers und Dünnfilm-Halbleiterkörper
CN103560189B (zh) * 2013-11-14 2016-05-18 安徽三安光电有限公司 发光二极管芯片及其制作方法
CN105280838B (zh) * 2015-09-22 2017-08-25 深圳市华星光电技术有限公司 一种oled发光器件及显示装置
JP6242954B1 (ja) 2016-07-11 2017-12-06 浜松ホトニクス株式会社 放射線検出器
FR3064109A1 (fr) * 2017-03-20 2018-09-21 Commissariat A L'energie Atomique Et Aux Energies Alternatives Structure a nanofils et procede de realisation d'une telle structure
US20210130764A1 (en) * 2018-06-12 2021-05-06 The Trustees Of Dartmouth College Method and apparatus of qr-coded, paper-based, colorimetric detection of volatile byproduct for rapid bacteria identification
KR102373099B1 (ko) * 2020-03-06 2022-03-14 웨이브로드 주식회사 반도체 발광소자 및 이를 제조하는 방법
JP2021196583A (ja) * 2020-06-18 2021-12-27 株式会社ジャパンディスプレイ 表示装置
US20240282884A1 (en) * 2023-02-16 2024-08-22 Lumileds Llc Led device formation using releasable inorganic wafer bond

Citations (3)

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US20050236632A1 (en) * 2004-04-23 2005-10-27 Mu-Jen Lai Vertical electrode structure of gallium nitride based light emitting diode
KR20050123028A (ko) * 2004-06-25 2005-12-29 학교법인 성균관대학 질화갈륨계 수직구조 발광다이오드 및 그 제조방법
KR20080018084A (ko) * 2006-08-23 2008-02-27 삼성전기주식회사 수직구조 질화갈륨계 발광 다이오드 소자 및 그 제조방법

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US6465186B1 (en) * 1997-12-30 2002-10-15 Genecor International, Inc. Proteases from gram positive organisms
US6420736B1 (en) * 2000-07-26 2002-07-16 Axt, Inc. Window for gallium nitride light emitting diode
JP4233268B2 (ja) * 2002-04-23 2009-03-04 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
JP3874701B2 (ja) * 2002-06-26 2007-01-31 株式会社東芝 半導体発光素子及び半導体発光装置
JP4590905B2 (ja) * 2003-10-31 2010-12-01 豊田合成株式会社 発光素子および発光装置
JP2005259891A (ja) * 2004-03-10 2005-09-22 Toyoda Gosei Co Ltd 発光装置
KR20060007948A (ko) * 2004-07-23 2006-01-26 광주과학기술원 탑에미트형 질화물계 발광소자 및 그 제조방법
JP4371029B2 (ja) * 2004-09-29 2009-11-25 サンケン電気株式会社 半導体発光素子およびその製造方法
TWI271883B (en) * 2005-08-04 2007-01-21 Jung-Chieh Su Light-emitting devices with high extraction efficiency
JP2008053685A (ja) * 2006-08-23 2008-03-06 Samsung Electro Mech Co Ltd 垂直構造窒化ガリウム系発光ダイオード素子及びその製造方法
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JP4770785B2 (ja) * 2007-04-25 2011-09-14 日立電線株式会社 発光ダイオード

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050236632A1 (en) * 2004-04-23 2005-10-27 Mu-Jen Lai Vertical electrode structure of gallium nitride based light emitting diode
KR20050123028A (ko) * 2004-06-25 2005-12-29 학교법인 성균관대학 질화갈륨계 수직구조 발광다이오드 및 그 제조방법
KR20080018084A (ko) * 2006-08-23 2008-02-27 삼성전기주식회사 수직구조 질화갈륨계 발광 다이오드 소자 및 그 제조방법

Also Published As

Publication number Publication date
EP2259344A2 (en) 2010-12-08
US20110062467A1 (en) 2011-03-17
KR101469979B1 (ko) 2014-12-05
WO2009120011A2 (ko) 2009-10-01
EP2259344A4 (en) 2013-09-18
EP2259344B1 (en) 2017-12-13
KR20090101604A (ko) 2009-09-29
CN102037574B (zh) 2013-01-09
US8791480B2 (en) 2014-07-29
CN102037574A (zh) 2011-04-27

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