WO2010036055A3 - 3족 질화물 반도체 발광소자 - Google Patents

3족 질화물 반도체 발광소자 Download PDF

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Publication number
WO2010036055A3
WO2010036055A3 PCT/KR2009/005492 KR2009005492W WO2010036055A3 WO 2010036055 A3 WO2010036055 A3 WO 2010036055A3 KR 2009005492 W KR2009005492 W KR 2009005492W WO 2010036055 A3 WO2010036055 A3 WO 2010036055A3
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WO
WIPO (PCT)
Prior art keywords
nitride semiconductor
group iii
iii nitride
plane
groove
Prior art date
Application number
PCT/KR2009/005492
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English (en)
French (fr)
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WO2010036055A2 (ko
Inventor
김창태
나민규
Original Assignee
주식회사 에피밸리
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 주식회사 에피밸리 filed Critical 주식회사 에피밸리
Priority to CN2009801433271A priority Critical patent/CN102203968A/zh
Priority to US12/648,670 priority patent/US8120047B2/en
Publication of WO2010036055A2 publication Critical patent/WO2010036055A2/ko
Publication of WO2010036055A3 publication Critical patent/WO2010036055A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

본 개시는 제1 홈 및 제2 홈이 형성되어 있으며, 제1 면 및 제1 면과 마주하는 제2 면을 구비하는 기판; 기판의 제1 면 위에 형성되며, 제1 도전성을 지니는 제1 3족 질화물 반도체층과, 제1 3족 질화물 반도체층 위에 형성되고 제1 도전성과 다른 제2 도전성을 지니는 제2 3족 질화물 반도체층과, 제1 및 제2 3족 질화물 반도체층 사이에 위치하여 전자와 정공의 재결합을 통해 빛을 생성하는 활성층을 구비하는 복수개의 3족 질화물 반도체층; 제1 홈 위에서 복수개의 3족 질화물 반도체층을 따라 형성되는 제1 개구부; 제2 홈 위에서 복수개의 3족 질화물 반도체층을 따라 형성되는 제2 개구부; 기판의 제2 면으로부터 제1 홈을 통해 제1 개구부에서 제1 3족 질화물 반도체층과 전기적으로 연결되는 제1 전극; 그리고, 기판의 제2 면으로부터 제2 홈 및 제2 개구부를 통해 제2 3족 질화물 반도체층과 전기적으로 연결되는 제2 전극;을 포함하는 것을 특징으로 하는 3족 질화물 반도체 발광소자에 관한 것이다.
PCT/KR2009/005492 2008-09-25 2009-09-25 3족 질화물 반도체 발광소자 WO2010036055A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2009801433271A CN102203968A (zh) 2008-09-25 2009-09-25 Iii族氮化物半导体发光器件
US12/648,670 US8120047B2 (en) 2008-09-25 2009-12-29 III-nitride semiconductor light emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080093969A KR100981275B1 (ko) 2008-09-25 2008-09-25 3족 질화물 반도체 발광소자
KR10-2008-0093969 2008-09-25

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/648,670 Continuation US8120047B2 (en) 2008-09-25 2009-12-29 III-nitride semiconductor light emitting device

Publications (2)

Publication Number Publication Date
WO2010036055A2 WO2010036055A2 (ko) 2010-04-01
WO2010036055A3 true WO2010036055A3 (ko) 2010-07-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/005492 WO2010036055A2 (ko) 2008-09-25 2009-09-25 3족 질화물 반도체 발광소자

Country Status (4)

Country Link
US (1) US8120047B2 (ko)
KR (1) KR100981275B1 (ko)
CN (1) CN102203968A (ko)
WO (1) WO2010036055A2 (ko)

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KR101147715B1 (ko) * 2009-09-30 2012-05-23 주식회사 세미콘라이트 반도체 발광소자
CN102792471A (zh) * 2010-04-01 2012-11-21 松下电器产业株式会社 发光二极管元件及发光二极管装置
US9287452B2 (en) * 2010-08-09 2016-03-15 Micron Technology, Inc. Solid state lighting devices with dielectric insulation and methods of manufacturing
JP5325197B2 (ja) * 2010-11-30 2013-10-23 豊田合成株式会社 発光装置およびその製造方法
JP5943828B2 (ja) * 2012-03-28 2016-07-05 有限会社 ナプラ 発光デバイス、照明装置、ディスプレイ及び信号灯
JP5768759B2 (ja) * 2012-04-27 2015-08-26 豊田合成株式会社 半導体発光素子
JP2015050390A (ja) * 2013-09-03 2015-03-16 ルネサスエレクトロニクス株式会社 半導体装置
KR102122846B1 (ko) * 2013-09-27 2020-06-15 서울바이오시스 주식회사 질화물 반도체 성장 방법, 이를 이용한 반도체 제조용 템플릿 제조 방법 및 반도체 발광 소자 제조 방법
CN103579423B (zh) * 2013-11-19 2016-03-09 中国科学院半导体研究所 芯片尺寸级晶圆发光二极管的制作方法
KR20150064414A (ko) * 2013-12-03 2015-06-11 삼성전자주식회사 발광소자 및 이를 포함하는 조명 장치
JP6497647B2 (ja) * 2013-12-24 2019-04-10 パナソニックＩｐマネジメント株式会社 表示装置及び表示装置の製造方法
KR101660020B1 (ko) * 2015-08-21 2016-09-30 서울반도체 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
CN108475715B (zh) * 2016-01-05 2020-11-03 世迈克琉明有限公司 半导体发光元件
KR102405836B1 (ko) * 2016-05-02 2022-06-08 웨이브로드 주식회사 3족 질화물 반도체층 성장을 위한 템플릿, 3족 질화물 반도체 발광소자 및 이들을 제조하는 방법
US20190229230A1 (en) 2016-05-02 2019-07-25 Sang Jeong An Template for growing group iii-nitride semiconductor layer, group iii-nitride semiconductor light emitting device, and manufacturing method therefor
KR102437209B1 (ko) * 2016-12-16 2022-08-30 웨이브로드 주식회사 화합물 반도체 광소자를 제조하는 방법
KR102404522B1 (ko) * 2019-05-02 2022-06-08 한국전자통신연구원 반도체 소자 제조방법
TWI725688B (zh) * 2019-12-26 2021-04-21 新唐科技股份有限公司 半導體結構及其製造方法
US20220246801A1 (en) * 2021-02-03 2022-08-04 Samsung Electronics Co., Ltd. Light-emitting device and display apparatus including the same

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Also Published As

Publication number Publication date
WO2010036055A2 (ko) 2010-04-01
KR20100034797A (ko) 2010-04-02
CN102203968A (zh) 2011-09-28
US20100096651A1 (en) 2010-04-22
KR100981275B1 (ko) 2010-09-10
US8120047B2 (en) 2012-02-21

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