WO2010044561A3 - 3족 질화물 반도체 발광소자 - Google Patents

3족 질화물 반도체 발광소자 Download PDF

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Publication number
WO2010044561A3
WO2010044561A3 PCT/KR2009/005706 KR2009005706W WO2010044561A3 WO 2010044561 A3 WO2010044561 A3 WO 2010044561A3 KR 2009005706 W KR2009005706 W KR 2009005706W WO 2010044561 A3 WO2010044561 A3 WO 2010044561A3
Authority
WO
WIPO (PCT)
Prior art keywords
nitride semiconductor
group iii
iii nitride
emitting device
light emitting
Prior art date
Application number
PCT/KR2009/005706
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English (en)
French (fr)
Other versions
WO2010044561A2 (ko
Inventor
박은현
Original Assignee
주식회사 에피밸리
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 에피밸리 filed Critical 주식회사 에피밸리
Priority to US12/648,692 priority Critical patent/US20100102353A1/en
Publication of WO2010044561A2 publication Critical patent/WO2010044561A2/ko
Publication of WO2010044561A3 publication Critical patent/WO2010044561A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

본 개시는 기판; 기판 위에 위치하며, 전자와 정공의 재결합을 통해 빛을 생성시키는 활성층을 구비하는 복수개의 3족 질화물 반도체층; 그리고, 활성층에서 생성된 빛을 스캐터링하는 면;으로서, 식각된 제1 면과 제1 면을 덮는 제2 면을 구비하는 스캐터링 면;을 포함하는 것을 특징으로 하는 3족 질화물 반도체 발광소자에 관한 것이다.
PCT/KR2009/005706 2008-10-15 2009-10-07 3족 질화물 반도체 발광소자 WO2010044561A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/648,692 US20100102353A1 (en) 2008-10-15 2009-12-29 III-Nitride Semiconductor Light Emitting Device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0101155 2008-10-15
KR1020080101155A KR101009651B1 (ko) 2008-10-15 2008-10-15 3족 질화물 반도체 발광소자

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/648,692 Continuation US20100102353A1 (en) 2008-10-15 2009-12-29 III-Nitride Semiconductor Light Emitting Device

Publications (2)

Publication Number Publication Date
WO2010044561A2 WO2010044561A2 (ko) 2010-04-22
WO2010044561A3 true WO2010044561A3 (ko) 2010-08-05

Family

ID=42107018

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/005706 WO2010044561A2 (ko) 2008-10-15 2009-10-07 3족 질화물 반도체 발광소자

Country Status (3)

Country Link
US (1) US20100102353A1 (ko)
KR (1) KR101009651B1 (ko)
WO (1) WO2010044561A2 (ko)

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TWI528579B (zh) * 2012-04-18 2016-04-01 新世紀光電股份有限公司 發光二極體元件
WO2014025003A1 (ja) * 2012-08-06 2014-02-13 日本碍子株式会社 複合基板および機能素子
TWI565094B (zh) * 2012-11-15 2017-01-01 財團法人工業技術研究院 氮化物半導體結構
CN103165771B (zh) * 2013-03-28 2015-07-15 天津三安光电有限公司 一种具有埋入式孔洞结构的氮化物底层及其制备方法
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TWI597863B (zh) * 2013-10-22 2017-09-01 晶元光電股份有限公司 發光元件及其製造方法
KR102284535B1 (ko) * 2014-11-12 2021-08-02 서울바이오시스 주식회사 발광 소자 및 그 제조 방법
JP2016066814A (ja) * 2015-12-22 2016-04-28 株式会社東芝 半導体発光素子、窒化物半導体層成長用基板及び窒化物半導体ウェーハ
KR102591149B1 (ko) * 2021-12-20 2023-10-19 웨이브로드 주식회사 비발광 3족 질화물 반도체 적층체를 제조하는 방법

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Also Published As

Publication number Publication date
KR101009651B1 (ko) 2011-01-19
WO2010044561A2 (ko) 2010-04-22
US20100102353A1 (en) 2010-04-29
KR20100042041A (ko) 2010-04-23

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