TWI565094B - 氮化物半導體結構 - Google Patents
氮化物半導體結構 Download PDFInfo
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Description
本揭露是有關於一種氮化物半導體結構,是關於一種位於矽基板上的氮化物半導體結構。
目前,氮化物發光二極體之成本遠較其他照明元件高出許多,由於矽基板具有高導熱性、高導電、容易切割及低成本等優點,近年來,各大公司爭相研發以矽基板為基礎的氮化物發光二極體。
然而,以矽基板為基礎所製造的氮化物半導體結構由於製作良率不高,使得製造成本無法大幅降低。影響氮化物半導體結構之製造良率的主要因素在於氮化物半導體層與矽基板間之膨脹係數(CTE)以及晶格的不匹配。以氮化鎵(GaN)半導體層為例,氮化鎵(GaN)半導體層與矽基板的熱膨脹係數差異高達54%,所以傳統的氮化鎵(GaN)半導體層在冷卻期間會因熱應力過大而造成薄膜龜裂。此外,氮化鎵(GaN)半導體層與矽基板的晶格常數差異高達17%,晶格常數的不匹配會造成氮化鎵(GaN)半導體層在磊晶過程中產生內應力,進而導致鎵(GaN)半導體層容易龜裂並形成缺陷。因此,無摻雜氮化鎵半導體層(u-GaN)或n型摻雜氮化鎵半導體層(n-GaN)的厚度幾乎都在3微米(um)以下,這也就是氮化物半導體成長在矽基板上的厚度受到限制的原因之。
圖1A是習知的一種氮化物半導體結構的剖面示意圖,圖1B是習知的一種氮化物半導體結構的掃描式電子顯微鏡(Scanning Electron Microscope,SEM)照片,而圖1C是圖1B之氮化物半導體結構的上視圖。
請參照圖1A,習知之氮化物半導體結構100包括一矽
基板110、一成核層120以及一氮化物半導體層130,其中成核層120位於矽基板110上,且氮化物半導體層130位於成核層120上。在習知的氮化物半導體結構100中,成核層120之材質通常為氮化鋁(AlN),而氮化物半導體層130之材質通常為無摻雜或n型摻雜之氮化鎵。
請參照圖1B與圖1C,當氮化物半導體層130直接成長在成核層120上時,會產生很大的壓縮應力(compressive strain)而非常容易導致氮化物半導體層130發生龜裂的現象。由圖1C可知,氮化物半導體層130的表面上會產生很多孔洞(pit)及裂紋(crack)。由於直接在成核層120上成長氮化物半導體層130會因為應力過大而產生孔洞及裂紋,因此氮化物半導體層130的成長厚度通常無法超過3微米(um)。以圖1B為例,氮化物半導體層130的厚度僅有約2微米(um)。
本揭露的一實施例提供一氮化物半導體結構,其包括矽基板、成核層、含鋁緩衝層及氮化物半導體層。成核層配置在矽基板上。含鋁緩衝層配置在成核層上,且含鋁緩衝層具有第一厚度。氮化物半導體層配置在含鋁緩衝層上,且氮化物半導體層具有第二厚度,其中氮化物半導體層之第二厚度對含鋁緩衝層之第一厚度的比例介於0.4:1與2.5:1之間。
為讓本揭露之上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。
100‧‧‧氮化物半導體結構
110‧‧‧矽基板
120‧‧‧成核層
130‧‧‧氮化物半導體層
200‧‧‧氮化物半導體結構
210‧‧‧矽基板
220‧‧‧成核層
230‧‧‧含鋁緩衝層
240‧‧‧氮化物半導體層
圖1A是習知的一種氮化物半導體結構的剖面示意圖。
圖1B是習知的一種氮化物半導體結構的掃描式電子顯微鏡(SEM)照片。
圖1C是圖1B之氮化物半導體結構的上視圖。
圖2為本揭露的一實施例之一種氮化物半導體結構的剖面示意圖。
圖3A至圖3D分別繪示出不同型態之含鋁緩衝層的剖面示意圖。
圖4A至圖4B為圖3A中的氮化物半導體結構的掃瞄式電子顯微鏡(SEM)照片(頂視)。
圖5A至圖5B為圖3B中的氮化物半導體結構的掃瞄式電子顯微鏡照片(頂視)。
圖6A至圖6B為圖3C中的氮化物半導體結構的掃瞄式電子顯微鏡照片(頂視)。
圖7A至圖7B為圖3D中的氮化物半導體結構的掃瞄式電子顯微鏡照片(頂視)。
圖8為(102)之X射線半高寬(X-ray FWHM)與氮化鋁鎵連續漸變層之厚度的關係圖。
本揭露在氮化物半導體層與矽基板之間形成一層含鋁緩衝層,並控制含鋁緩衝層與氮化物半導體層的厚度比例,以降低應力,進而降低前述裂紋產生的可能性。
圖2為本揭露的一實施例之一種氮化物半導體結構的剖面示意圖。請參照圖2,在本實施例中,氮化物半導體結構200包括矽基板210、成核層220、含鋁緩衝層230及氮化物半導體層240。成核層220配置在矽基板210上。含鋁緩衝層230配置在成核層220上,且含鋁緩衝層230具有第一厚度T1。氮化物半導體層240配置在含鋁緩衝層230上,且氮化物半導體層240具有第二厚度T2,其中氮化物半導體層240之第二厚度T2對含鋁緩衝層230之第一厚度T1的厚度比例(即T2:T1)介於0.4:1與2.5:1之間。換言之,氮化物半導體層240之第二厚度T2對含鋁緩衝層230之第一厚度T1的厚度比值(即T2/T1)介於0.4與2.5之間。
在本實施例中,矽基板210上之成核層220、含鋁緩衝層230以及氮化物半導體層240的成長可藉由金屬有機化學氣相沈積
(metal organic chemical vapor deposition,MOCVD)製程或者其他適合的磊晶製程來進行。在本實施例中,成核層220之材質例如是氮化鋁或者是其他合適的材料。在本實施例中,成核層220的材料不以此為限。此外,氮化物半導體層240之材質通常為無摻雜或n型摻雜之氮化鎵。
圖3A至圖3D分別繪示出不同型態之含鋁緩衝層的剖面示意圖。首先,請同時參照圖2與圖3A,含鋁緩衝層230例如為氮化鋁鎵連續漸變層(continuously graded AlxGa1-xN layer)。此處,氮化鋁鎵連續漸變層中的鋁含量(即x值)係由鄰近於成核層220的一側往鄰近於氮化物半導體層240的一側遞減。圖3A中的含鋁緩衝層230的平均鋁濃度(X Al )可由前述之x值推算而得,將詳述於後。
接著請參照圖2與圖3B,含鋁緩衝層230例如為氮化鋁鎵/氮化鎵的超晶格層(superlattice AlxGayIn1-x-yN/GaN,0<x+y1,0<x<1,0<y<1)。此處,氮化鋁鎵/氮化鎵的超晶格層中的氮化鋁鎵層以及氮化鎵層係彼此交替地排列於成核層220上。此外,本揭露不限定氮化鋁鎵層以及氮化鎵層的數量。圖3B中的含鋁緩衝層230的平均鋁濃度(X Al )可由氮化鋁鎵層以及氮化鎵層的鋁含量推算而得,將詳述於後。
接著請參照圖2與圖3C,含鋁緩衝層230例如為氮化鋁鎵步階漸變層(step graded AlxGa1-xN layer,0<x<1)。此處,氮化鋁鎵連續漸變層包括了多個彼此鋁含量不同的氮化鋁鎵子層(AlxGa1-xN sub-layers,0<x<1),其中較鄰近於成核層220的氮化鋁鎵子層具有較高的鋁含量,而較鄰近於氮化物半導體層240的氮化鋁鎵子層則具有較低的鋁含量。如圖3C所示,含鋁緩衝層230的平均鋁濃度(X Al )可由下式計算而得:
其中x1、x2、x3、x4…為各個氮化鋁鎵子層的鋁含量,而t1、t2、t3、
t4…為各個氮化鋁鎵子層的厚度。值得注意的是,圖3A與圖3B中含鋁緩衝層230的平均鋁濃度(X Al )亦可以採用上式來計算。
接著請參照圖3D,含鋁緩衝層230例如為氮化鋁鎵主體層(bulk AlxGa1-xN layer,0<x<1)。圖3D中的含鋁緩衝層230的平均鋁濃度(X Al )即為前述之x值。
在本實施例中,含鋁緩衝層230的第一厚度T1例如是介於0.5微米至2微米之間,而含鋁緩衝層230之平均鋁濃度介於20%至60%之間。
當氮化物半導體層240為n型摻雜氮化物半導體層(n-GaN)以及無摻雜氮化物半導體層(u-GaN)時,氮化物半導體層240對應含鋁緩衝層230的厚度比值(T2/T1)、含鋁緩衝層230與氮化物半導體層240之鋁含量權重(Al weighting)以及含鋁緩衝層230之平均鋁濃度可參照下列之表一。當氮化物半導體結構中的氮化物半導體層240對應含鋁緩衝層230的厚度比值(T2/T1)落在表一所條列的數據範圍內時,氮化物半導體結構不易產生裂紋。此外,在滿足前述厚度比值(T2/T1)的前提下,當含鋁緩衝層230與氮化物半導體層240之鋁含量權重以及含鋁緩衝層230之平均鋁濃度落在表一所條列的數據範圍內時,氮化物半導體結構亦不易產生裂紋。
此處,前述之鋁含量權重係由下式(1)計算而得:
其中X Al 為含鋁緩衝層230之平均鋁濃度(X Al ),而T1為
鋁緩衝層230之第一厚度,且T2為氮化物半導體層240的第二厚度。
表二調列出不同型態的含鋁緩衝層230、含鋁緩衝層230的平均鋁濃度、厚度T1、不同氮化物半導體層(即,n型摻雜氮化物半導體層與無摻雜氮化物半導體層)的厚度T2以及厚度比值(T2/T1)。當氮化物半導體結構中的含鋁緩衝層230的厚度比值(T2/T1)落在表二所條列的數據範圍內時,氮化物半導體結構不易產生裂紋。此外,在滿足前述厚度比值(T2/T1)的前提下,當厚度T1、厚度T2以及含鋁緩衝層230的平均鋁濃度落在表二所條列的數據範圍內時,氮化物半導體結構亦不易產生裂紋。
如表二所記載,含鋁緩衝層230的第一厚度T1例如是介於0.5微米至2.5微米之間。
請參閱表一、表二與圖2,當氮化物半導體層240為n型摻雜氮化物半導體層(n-GaN)時,不論含鋁緩衝層230為何種型態,n型摻雜的氮化物半導體層之第二厚度T2對含鋁緩衝層230之第一厚度T1的比例(即T2:T1)介於0.4:1與1.5:1之間,且n型摻雜氮化物半導體層之第二厚度T2對含鋁緩衝層230之第一厚度T1的較佳厚度比例例如是介於0.42:1與1.2:1之間。此外,從表二可以清楚得知,n型摻雜氮化物半導體層的第二厚度T2介於0.5微米至1.5微米之間。
請參照表一,當氮化物半導體層240為n型摻雜氮化物半導體層(n-GaN)時,含鋁緩衝層230之平均鋁濃度(一)介於20%至60%之間,而含鋁緩衝層230之平均鋁濃度(二)介於30%至50%之間。此外,含鋁緩衝層230與n型摻雜氮化物半導體層之鋁含量權重(一)介於8%至43%之間,而含鋁緩衝層230與n型摻雜氮化物半導體層之鋁含量權重(二)介於12%至35.7%之間。承上述,當氮化物半導體結構中各薄膜滿足表一與表二中的數值範圍時,氮化物半導體結構不易產生裂紋。
請參照表一、表二與圖2,當氮化物半導體層240為無摻雜氮化物半導體層(u-GaN)時,不論含鋁緩衝層230為何種型態,無摻雜氮化物半導體層之第二厚度T2對含鋁緩衝層230之第一厚度T1的比例(即T2:T1)介於0.5:1與2.5:1之間,且無摻雜氮化物半導體層之第二厚度T2對含鋁緩衝層230之第一厚度T1的較佳厚度比例例如是介於0.6:1與2:1之間。此外,從表二可以清楚得知,無摻雜氮化物半導體層第二厚度T2介於0.25微米至1.5微米之間。
請參照表一,當氮化物半導體層240為無摻雜氮化物半導體層(u-GaN)時,含鋁緩衝層230之平均鋁濃度(一)介於20%至60%之間,而含鋁緩衝層230之平均鋁濃度(二)介於30%至50%之間。此外,含鋁緩衝層230與無摻雜氮化物半導體層之鋁含量權重(一)介於6%至
42%之間,而含鋁緩衝層230與n型摻雜氮化物半導體層之鋁含量權重(二)介於9%至35%之間。承上述,當氮化物半導體結構中各薄膜滿足表一與表二中的數值範圍時,氮化物半導體結構不易產生裂紋。
不同型態的含鋁緩衝層230上所能成長的氮化物半導體層240的厚度也有所差異。因此,只要適當的控制氮化物半導體層240之第二厚度T2對含鋁緩衝層230之第一厚度T1的比例落在0.4:1與2.5:1之間,將有助於矽基板成長厚度較厚且不易有裂紋的氮化物半導體層240。
圖4A至圖4B為圖3A中的氮化物半導體結構的掃瞄式電子顯微鏡(SEM)照片(頂視)。請參閱圖2、圖3A、圖4A及圖4B,當含鋁緩衝層230為氮化鋁鎵連續漸變層,且氮化物半導體層240之厚度T2對含鋁緩衝層230之厚度T1的厚度比例(T2/T1)大於2.5時,氮化物半導體結構200的表面上有明顯的裂紋以及孔洞產生:當含鋁緩衝層230為氮化鋁鎵連續漸變層,且氮化物半導體層240之厚度T2對含鋁緩衝層230之厚度T1的厚度比例(T2/T1)小於或等於2.5時,氮化物半導體結構200的表面上無明顯的裂紋產生。
圖5A至圖5B為圖3B中的氮化物半導體結構的掃瞄式電子顯微鏡照片(頂視)。請參閱圖2、圖3B、圖5A及圖5B,當含鋁緩衝層230為氮化鋁鎵/氮化鎵的超晶格層,且氮化物半導體層240之厚度T2對含鋁緩衝層230之厚度T1的厚度比例(T2/T1)大於0.6時,氮化物半導體結構200的表面上有明顯的裂紋以及孔洞產生:當含鋁緩衝層230為氮化鋁鎵/氮化鎵的超晶格層,且氮化物半導體層240之厚度T2對含鋁緩衝層230之厚度T1的厚度比例(T2/T1)小於或等於0.6時,氮化物半導體結構200的表面上無明顯的裂紋產生。
圖6A至圖6B為圖3C中的氮化物半導體結構的掃瞄式電子顯微鏡照片(頂視)。請參閱圖2、圖3C、圖6A及圖6B,當含鋁緩衝層230為氮化鋁鎵步階漸變層,且氮化物半導體層240之厚度T2對含鋁緩衝層230之厚度T1的厚度比例(T2/T1)大於1.2時,氮化物半導體結構200的表面上有明顯的裂紋以及孔洞產生:當含鋁緩衝層230為氮化鋁鎵步階漸變層,且氮化物半導體層240之厚度T2對含鋁緩衝層230之厚度T1的厚度比例(T2/T1)小於或等於1.2時,氮化物半導體結構200的表面上無明顯的裂紋產生。
圖7A至圖7B為圖3D中的氮化物半導體結構的掃瞄式電子顯微鏡照片(頂視)。請參閱圖2、圖3D、圖7A及圖7B,當含鋁緩衝層230為氮化鋁鎵主體層,且氮化物半導體層240之厚度T2對含鋁緩衝層230之厚度T1的厚度比例(T2/T1)大於2時,氮化物半導體結構200的表面上有明顯的裂紋以及孔洞產生:當含鋁緩衝層230為氮化鋁鎵主體層,且氮化物半導體層240之厚度T2對含鋁緩衝層230之厚度T1的厚度比例(T2/T1)小於或等於2時,氮化物半導體結構200的表面上無明顯的裂紋產生。
圖8為(102)之X射線半高寬(X-ray FWHM)與氮化鋁鎵連續漸變層之厚度的關係圖。請參照圖8,本實施例將1微米之氮化鎵(GaN)形成於不同厚度之氮化鋁鎵連續漸變層上,並逐一量測其(102)之X射線半高寬(X-ray FWHM)。從圖8可知,當氮化物半導體層之厚度T2對含鋁緩衝層之厚度T1的厚度比例(T2/T1)介於0.5至2.5之間時,氮化物半導體結構200的表面上無明顯的裂紋產生。
綜上所述,本揭露可藉由調整氮化物半導體層對含鋁緩衝層的厚度比例,以降低氮化物半導體結構產生裂紋的可能性。在裂紋不易產生的前提下,氮化物半導體結構中的氮化物半導體層的成長
厚度可以被適度地增加。
雖然本揭露已以實施例揭露如上,然其並非用以限定本揭露,任何所屬技術領域中具有通常知識者,在不脫離本揭露之精神和範圍內,當可作些許之更動與潤飾,故本揭露之保護範圍當視後附之申請專利範圍所界定者為準。
200‧‧‧氮化物半導體結構
210‧‧‧矽基板
220‧‧‧成核層
230‧‧‧含鋁緩衝層
240‧‧‧氮化物半導體層
Claims (18)
- 一種氮化物半導體結構,包括:一矽基板;一成核層,配置在該矽基板上;一含鋁氮化物半導體緩衝層,配置在該成核層上,該含鋁氮化物半導體緩衝層具有一第一厚度;以及一氮化物半導體層,配置在該含鋁氮化物半導體緩衝層上,該氮化物半導體層具有一第二厚度,該含鋁氮化物半導體緩衝層與該氮化物半導體層滿足下列條件:該含鋁氮化物半導體緩衝層包括一氮化鋁鎵連續漸變層,且該氮化物半導體層之該第二厚度對該含鋁氮化物半導體緩衝層之該第一厚度的比例介於0.4:1與2.5:1之間,或該含鋁氮化物半導體緩衝層包括一氮化鋁鎵步階漸變層,且該氮化物半導體層之該第二厚度對該含鋁氮化物半導體緩衝層之該第一厚度的比例介於0.4:1與1.2:1之間;以及該氮化物半導體層包括一n型摻雜氮化物半導體層,且該含鋁氮化物半導體緩衝層與該氮化物半導體層之一鋁含量權重(Al weighting)介於8%與43%之間,而該鋁含量權重係由下式(1)計算而得,
- 如申請專利範圍第1項所述之氮化物半導體結構,其中該含鋁氮化物半導體緩衝層的該第一厚度介於0.5微米至2.5微米之間。
- 如申請專利範圍第1項所述之氮化物半導體結構,其中該含鋁 氮化物半導體緩衝層之平均鋁濃度介於20%至60%。
- 如申請專利範圍第1項所述之氮化物半導體結構,其中當該氮化物半導體層包括該n型摻雜氮化物半導體層時,該氮化物半導體層的該第二厚度介於0.5微米至1.5微米之間。
- 如申請專利範圍第1項所述之氮化物半導體結構,其中該n型摻雜的氮化物半導體層之該第二厚度對該含鋁氮化物半導體緩衝層之該第一厚度的比例介於0.4:1與1.5:1之間。
- 如申請專利範圍第1項所述之氮化物半導體結構,其中該n型摻雜的氮化物半導體層之該第二厚度對該含鋁氮化物半導體緩衝層之該第一厚度的比例介於0.42:1與1.2:1之間。
- 一種氮化物半導體結構,包括:一矽基板;一成核層,配置在該矽基板上;一含鋁氮化物半導體緩衝層,配置在該成核層上,該含鋁氮化物半導體緩衝層具有一第一厚度;以及一氮化物半導體層,配置在該含鋁氮化物半導體緩衝層上,該氮化物半導體層具有一第二厚度,其中該氮化物半導體層之該第二厚度對該含鋁氮化物半導體緩衝層之該第一厚度的比例介於0.4:1與0.6:1之間,且該含鋁氮化物半導體緩衝層與該氮化物半導體層滿足下列條件:該氮化物半導體層包括一n型摻雜氮化物半導體層,且該含鋁氮化物半導體緩衝層與該氮化物半導體層之一鋁含量權重(Al weighting)介於8%與43%之間,或該氮化物半導體層包括一無摻雜氮化物半導體層,且該含鋁氮化物半導體緩衝層與該氮化物半導體層之一鋁含量權重介於6%與42%之間,而該鋁含量權重係由下式(1)計算而得,
- 如申請專利範圍第7項所述之氮化物半導體結構,其中該含鋁氮化物半導體緩衝層的該第一厚度介於0.5微米至2.5微米之間。
- 如申請專利範圍第7項所述之氮化物半導體結構,其中該含鋁氮化物半導體緩衝層之平均鋁濃度介於20%至60%。
- 如申請專利範圍第7項所述之氮化物半導體結構,其中該n型摻雜的氮化物半導體層之該第二厚度對該含鋁氮化物半導體緩衝層之該第一厚度的比例介於0.42:1與0.6:1之間。
- 如申請專利範圍第7項所述之氮化物半導體結構,其中該無摻雜氮化物半導體層之該第二厚度對該含鋁氮化物半導體緩衝層之該第一厚度的比例介於0.5:1與0.6:1之間。
- 一種氮化物半導體結構,包括:一矽基板;一成核層,配置在該矽基板上;一含鋁氮化物半導體緩衝層,配置在該成核層上,該含鋁氮化物半導體緩衝層具有一第一厚度,該含鋁氮化物半導體緩衝層包括一氮化鋁鎵主體層;以及一氮化物半導體層,配置在該含鋁氮化物半導體緩衝層上,該氮化物半導體層具有一第二厚度,其中該氮化物半導體層之該第二厚度對該含鋁氮化物半導體緩衝層之該第一厚度的比例介於0.4:1與2:1之間,且該含鋁氮化物半導體緩衝層與該氮化物半導體層滿足下列條件: 該氮化物半導體層包括一n型摻雜氮化物半導體層時,且該含鋁氮化物半導體緩衝層與該氮化物半導體層之一鋁含量權重(Al weighting)介於8%與43%之間,或該氮化物半導體層包括一無摻雜氮化物半導體層時,且該含鋁氮化物半導體緩衝層與該氮化物半導體層之一鋁含量權重介於6%與42%之間,而該鋁含量權重係由下式(1)計算而得,
- 如申請專利範圍第12項所述之氮化物半導體結構,其中該含鋁氮化物半導體緩衝層的該第一厚度介於0.5微米至2.5微米之間。
- 如申請專利範圍第12項所述之氮化物半導體結構,其中該含鋁氮化物半導體緩衝層之平均鋁濃度介於20%至60%。
- 如申請專利範圍第12項所述之氮化物半導體結構,其中該n型摻雜的氮化物半導體層之該第二厚度對該含鋁氮化物半導體緩衝層之該第一厚度的比例介於0.4:1與1.5:1之間。
- 如申請專利範圍第12項所述之氮化物半導體結構,其中該n型摻雜的氮化物半導體層之該第二厚度對該含鋁氮化物半導體緩衝層之該第一厚度的比例介於0.42:1與1.2:1之間。
- 如申請專利範圍第12項所述之氮化物半導體結構,其中該無摻雜氮化物半導體層之該第二厚度對該含鋁氮化物半導體緩衝層之該第一厚度的比例介於0.5:1與2:1之間。
- 如申請專利範圍第12項所述之氮化物半導體結構,其中該無摻雜氮化物半導體層之該第二厚度對該含鋁氮化物半導體緩衝層之該 第一厚度的比例介於0.6:1與2:1之間。
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CN103824919A (zh) | 2014-05-28 |
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TWI518942B (zh) | 2016-01-21 |
US20140131732A1 (en) | 2014-05-15 |
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TW201419575A (zh) | 2014-05-16 |
US9397281B2 (en) | 2016-07-19 |
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