KR100448352B1 - GaN 기반 질화막의 형성방법 - Google Patents
GaN 기반 질화막의 형성방법 Download PDFInfo
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- KR100448352B1 KR100448352B1 KR10-2003-0085334A KR20030085334A KR100448352B1 KR 100448352 B1 KR100448352 B1 KR 100448352B1 KR 20030085334 A KR20030085334 A KR 20030085334A KR 100448352 B1 KR100448352 B1 KR 100448352B1
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- Prior art keywords
- gan
- nitride film
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- based nitride
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000000872 buffer Substances 0.000 claims abstract description 40
- 238000009736 wetting Methods 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 22
- 239000010980 sapphire Substances 0.000 claims abstract description 22
- 239000000203 mixture Substances 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 86
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 51
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 40
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 3
- 239000007833 carbon precursor Substances 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 97
- 229910002601 GaN Inorganic materials 0.000 abstract description 91
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 79
- 230000000052 comparative effect Effects 0.000 description 18
- 239000000463 material Substances 0.000 description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000006173 Good's buffer Substances 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 125000000446 sulfanediyl group Chemical group *S* 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- Crystals, And After-Treatments Of Crystals (AREA)
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Abstract
Description
Claims (13)
- 사파이어 기판 상에 두께가 5Å∼200Å인 비단결정 실리콘 카바이드 버퍼층을 형성하는 단계와;상기 실리콘 카바이드 버퍼층 상에 In(x1)Ga(y1)N (0≤x1≤1, 0≤y1<1, x1+y1=1)의 조성으로 이루어진 웨팅층을 형성하는 단계와;상기 웨팅층 상에 GaN를 성분으로 포함하는 질화막을 형성하는 단계;를 구비하는 GaN 기반 질화막 형성방법.
- 제1항에 있어서, 상기 실리콘 카바이드 버퍼층의 형성 시에, 탄소 전구체로서 CBr4 또는 CxHy (x, y 는 정수) 또는 위 두 가지를 혼용하는 것을 특징으로 하는 GaN 기반 질화막 형성방법.
- 제1항에 있어서, 상기 실리콘 카바이드 버퍼층의 형성 온도(T)가 600℃≤ T≤ 990℃ 인 것을 특징으로 하는 GaN 기반 질화막 형성방법.
- 제1항에 있어서, 상기 웨팅층이 단층으로 이루어진 것을 특징으로 하는 GaN 기반 질화막 형성방법.
- 제1항에 있어서, 상기 웨팅층이 2층 이상의 조합으로 이루어진 것을 특징으로 하는 GaN 기반 질화막 형성방법.
- 제1항에 있어서, 상기 웨팅층의 성장 온도가 400℃∼900℃이며, 그 두께가 100Å∼500Å인 것을 특징으로 하는 GaN 기반 질화막 형성방법.
- 제1항에 있어서, 상기 웨팅층의 형성단계에서, 오족 대 삼족의 비가 1∼5,000 범위 내에 있되, 상기 GaN 기반 질화막에 힐락이 발생하게 만드는 오족 대 삼족의 비보다 작은 것을 특징으로 하는 GaN 기반 질화막 형성방법.
- 제1항에 있어서, 상기 질화막이, In(x2)Ga(y2)N (0≤x2≤1, 0≤y2≤1, x2+y2=1)의 조성으로 이루어진 것을 특징으로 하는 GaN 기반 질화막 형성방법.
- 제6항에 있어서, 상기 질화막이 단층으로 이루어진 것을 특징으로 하는 GaN 기반 질화막 형성방법.
- 제6항에 있어서, 상기 질화막이 2층 이상의 조합으로 이루어진 것을 특징으로 하는 GaN 기반 질화막 형성방법.
- 제1항에 있어서, 상기 질화막의 성장 온도가 800℃∼1200℃인 것을 특징으로 하는 GaN 기반 질화막 형성방법.
- 제1항에 있어서, 상기 질화막의 형성단계에서 오족 대 삼족의 비가 500∼20,000인 것을 특징으로 하는 GaN 기반 질화막 형성방법.
- 삭제
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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KR10-2003-0085334A KR100448352B1 (ko) | 2003-11-28 | 2003-11-28 | GaN 기반 질화막의 형성방법 |
PCT/KR2004/002114 WO2005053042A1 (en) | 2003-11-28 | 2004-08-21 | Method for fabricating gan-based nitride layer |
US10/543,318 US7498244B2 (en) | 2003-11-28 | 2004-08-21 | Method for fabricating GaN-based nitride layer |
TW093136445A TWI241638B (en) | 2003-11-28 | 2004-11-26 | Method for fabricating GaN-based nitride layer |
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KR10-2003-0085334A KR100448352B1 (ko) | 2003-11-28 | 2003-11-28 | GaN 기반 질화막의 형성방법 |
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KR20040063073A KR20040063073A (ko) | 2004-07-12 |
KR100448352B1 true KR100448352B1 (ko) | 2004-09-10 |
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US (1) | US7498244B2 (ko) |
KR (1) | KR100448352B1 (ko) |
TW (1) | TWI241638B (ko) |
WO (1) | WO2005053042A1 (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7253451B2 (en) | 2004-11-29 | 2007-08-07 | Epivalley Co., Ltd. | III-nitride semiconductor light emitting device |
US7432534B2 (en) | 2004-03-05 | 2008-10-07 | Epivalley Co., Ltd. | III-nitride semiconductor light emitting device |
US7923749B2 (en) | 2004-03-25 | 2011-04-12 | EipValley Co., Ltd. | III-nitride compound semiconductor light emitting device |
Families Citing this family (25)
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JP4555340B2 (ja) | 2004-05-19 | 2010-09-29 | エピヴァレー カンパニー リミテッド | GaN系窒化膜を形成する方法 |
KR100746333B1 (ko) * | 2005-08-10 | 2007-08-03 | 한국광기술원 | 실리콘 기판위에 패터닝된 탄화규소 박막을 구비한질화물계 발광소자 및 이의 제조방법 |
KR101008285B1 (ko) | 2005-10-28 | 2011-01-13 | 주식회사 에피밸리 | 3족 질화물 반도체 발광소자 |
KR101008588B1 (ko) | 2005-11-16 | 2011-01-17 | 주식회사 에피밸리 | 3족 질화물 반도체 발광소자 |
WO2007119919A1 (en) * | 2006-04-18 | 2007-10-25 | Epivalley Co., Ltd. | Iii-nitride semiconductor light emitting device and method for manufacturing the same |
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KR100972852B1 (ko) * | 2007-12-31 | 2010-07-28 | 주식회사 에피밸리 | 3족 질화물 반도체 발광소자 및 그 제조방법 |
US20090272975A1 (en) * | 2008-05-05 | 2009-11-05 | Ding-Yuan Chen | Poly-Crystalline Layer Structure for Light-Emitting Diodes |
KR100988041B1 (ko) | 2008-05-15 | 2010-10-18 | 주식회사 에피밸리 | 반도체 발광소자 |
KR100981275B1 (ko) | 2008-09-25 | 2010-09-10 | 주식회사 에피밸리 | 3족 질화물 반도체 발광소자 |
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US20100102352A1 (en) * | 2008-10-24 | 2010-04-29 | Epivalley Co., Ltd. | III-Nitride Semiconductor Light Emitting Device |
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KR100960280B1 (ko) * | 2008-12-02 | 2010-06-04 | 주식회사 에피밸리 | 3족 질화물 반도체 발광소자 |
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US20100140656A1 (en) * | 2008-12-04 | 2010-06-10 | Epivalley Co., Ltd. | Semiconductor Light-Emitting Device |
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US7432534B2 (en) | 2004-03-05 | 2008-10-07 | Epivalley Co., Ltd. | III-nitride semiconductor light emitting device |
US7923749B2 (en) | 2004-03-25 | 2011-04-12 | EipValley Co., Ltd. | III-nitride compound semiconductor light emitting device |
US7253451B2 (en) | 2004-11-29 | 2007-08-07 | Epivalley Co., Ltd. | III-nitride semiconductor light emitting device |
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US20060154454A1 (en) | 2006-07-13 |
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