WO2009131401A3 - 발광 소자 및 그 제조방법 - Google Patents

발광 소자 및 그 제조방법 Download PDF

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Publication number
WO2009131401A3
WO2009131401A3 PCT/KR2009/002142 KR2009002142W WO2009131401A3 WO 2009131401 A3 WO2009131401 A3 WO 2009131401A3 KR 2009002142 W KR2009002142 W KR 2009002142W WO 2009131401 A3 WO2009131401 A3 WO 2009131401A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
light
emitting element
production method
electrically conductive
Prior art date
Application number
PCT/KR2009/002142
Other languages
English (en)
French (fr)
Other versions
WO2009131401A2 (ko
Inventor
송준오
Original Assignee
엘지이노텍주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR20080038586A external-priority patent/KR20090112854A/ko
Priority claimed from KR20080039083A external-priority patent/KR20090113349A/ko
Application filed by 엘지이노텍주식회사 filed Critical 엘지이노텍주식회사
Priority to EP09734490.7A priority Critical patent/EP2280427B1/en
Priority to US12/989,200 priority patent/US8471239B2/en
Priority to CN2009801146262A priority patent/CN102017200B/zh
Publication of WO2009131401A2 publication Critical patent/WO2009131401A2/ko
Publication of WO2009131401A3 publication Critical patent/WO2009131401A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

실시예에 따른 발광 소자는 지지 기판; 상기 지지 기판 상에 평탄화층; 상기 평탄화층 상에 웨이퍼 결합층; 상기 웨이퍼 결합층 상에 전류 퍼짐층; 상기 전류 퍼짐층 상에 제2 도전형의 반도체층; 상기 제2 도전형의 반도체층 상에 활성층; 상기 활성층 상에 제1 도전형의 반도체층; 상기 제1 도전형의 반도체층 상에 제1 전극층; 및 상기 전류 퍼짐층 상에 제2 전극층을 포함한다.
PCT/KR2009/002142 2008-04-25 2009-04-23 발광 소자 및 그 제조방법 WO2009131401A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP09734490.7A EP2280427B1 (en) 2008-04-25 2009-04-23 Light emitting diode
US12/989,200 US8471239B2 (en) 2008-04-25 2009-04-23 Light-emitting element and a production method therefor
CN2009801146262A CN102017200B (zh) 2008-04-25 2009-04-23 发光器件和制造发光器件的方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20080038586A KR20090112854A (ko) 2008-04-25 2008-04-25 그룹 3족 질화물계 반도체 발광다이오드 소자 및 이의 제조방법
KR10-2008-0038586 2008-04-25
KR20080039083A KR20090113349A (ko) 2008-04-27 2008-04-27 그룹 3족 질화물계 반도체 발광다이오드 소자 및 이의 제조방법
KR10-2008-0039083 2008-04-27

Publications (2)

Publication Number Publication Date
WO2009131401A2 WO2009131401A2 (ko) 2009-10-29
WO2009131401A3 true WO2009131401A3 (ko) 2010-02-11

Family

ID=41217286

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/002142 WO2009131401A2 (ko) 2008-04-25 2009-04-23 발광 소자 및 그 제조방법

Country Status (4)

Country Link
US (1) US8471239B2 (ko)
EP (1) EP2280427B1 (ko)
CN (1) CN102017200B (ko)
WO (1) WO2009131401A2 (ko)

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US8542186B2 (en) 2009-05-22 2013-09-24 Motorola Mobility Llc Mobile device with user interaction capability and method of operating same
FR2953328B1 (fr) * 2009-12-01 2012-03-30 S O I Tec Silicon On Insulator Tech Heterostructure pour composants electroniques de puissance, composants optoelectroniques ou photovoltaiques
KR101047792B1 (ko) * 2010-04-23 2011-07-07 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
CN102290513B (zh) * 2011-09-14 2013-03-06 青岛理工大学 一种大功率高亮度发光二极管芯片及其制造方法
FR2985609B1 (fr) * 2012-01-05 2014-02-07 Commissariat Energie Atomique Substrat structure pour leds a forte extraction de lumiere
JP2014183285A (ja) * 2013-03-21 2014-09-29 Stanley Electric Co Ltd 発光素子
CN104112804A (zh) * 2013-04-18 2014-10-22 展晶科技(深圳)有限公司 发光二极管晶粒
US20140367693A1 (en) * 2013-06-14 2014-12-18 Epistar Corporation Light-emitting device and the manufacturing method thereof
US9362452B2 (en) * 2013-06-14 2016-06-07 Epistar Corporation Light-emitting device and the manufacturing method thereof
TWI577046B (zh) * 2014-12-23 2017-04-01 錼創科技股份有限公司 半導體發光元件及其製作方法
KR20180086068A (ko) * 2017-01-20 2018-07-30 엘지이노텍 주식회사 반도체 소자 및 이를 포함하는 반도체 소자 패키지
CN109166950B (zh) * 2018-09-14 2024-04-19 厦门乾照光电股份有限公司 发光二极管的半导体芯片及其量子阱层和制造方法
CN110379895B (zh) * 2019-07-25 2022-04-22 湘能华磊光电股份有限公司 Led外延生长方法
JP7344937B2 (ja) * 2021-07-30 2023-09-14 日機装株式会社 半導体発光素子および半導体発光素子の製造方法

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US20070221944A1 (en) * 2005-11-15 2007-09-27 Myung Cheol Yoo Light emitting diodes and fabrication methods thereof
KR20070063912A (ko) * 2005-12-16 2007-06-20 삼성전자주식회사 광학 소자 및 그 제조 방법
KR20070081482A (ko) * 2006-02-13 2007-08-17 오인모 가장자리 엔형 오믹접촉 전극 구조를 갖는 차세대 피사이드다운 구조의 수직형 발광소자

Also Published As

Publication number Publication date
WO2009131401A2 (ko) 2009-10-29
CN102017200A (zh) 2011-04-13
US20110108798A1 (en) 2011-05-12
EP2280427A4 (en) 2011-11-30
EP2280427A2 (en) 2011-02-02
EP2280427B1 (en) 2013-08-21
US8471239B2 (en) 2013-06-25
CN102017200B (zh) 2013-07-10

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