JP7344937B2 - 半導体発光素子および半導体発光素子の製造方法 - Google Patents
半導体発光素子および半導体発光素子の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 143
- 238000000034 method Methods 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010410 layer Substances 0.000 claims description 569
- 238000009792 diffusion process Methods 0.000 claims description 105
- 239000000463 material Substances 0.000 claims description 53
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 48
- 239000011241 protective layer Substances 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 238000007740 vapor deposition Methods 0.000 claims description 10
- 229910002704 AlGaN Inorganic materials 0.000 claims 4
- 239000010948 rhodium Substances 0.000 description 87
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 36
- 238000005253 cladding Methods 0.000 description 22
- 239000000758 substrate Substances 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 229910002601 GaN Inorganic materials 0.000 description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 13
- 238000000137 annealing Methods 0.000 description 8
- 238000007789 sealing Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000001459 lithography Methods 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000003892 spreading Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- 229910004140 HfO Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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Description
Claims (4)
- n型AlGaN系半導体材料から構成されるn型半導体層と、
前記n型半導体層上に設けられ、AlGaN系半導体材料から構成される活性層と、
前記活性層上に設けられるp型半導体層と、
前記p型半導体層の上面と接触するRh層を含むp側コンタクト電極と、
前記p側コンタクト電極の上面および側面と接触し、順に積層される第1TiN層、Ti層、Rh層および第2TiN層を含むp側電流拡散層と、を備え、
前記p側コンタクト電極に含まれる前記Rh層は、蒸着法によって形成され、
前記p側電流拡散層に含まれる前記Rh層は、スパッタリング法によって形成され、
前記p側コンタクト電極に含まれる前記Rh層のAr濃度は、前記p側電流拡散層に含まれる前記Rh層のAr濃度よりも小さく、
前記p側コンタクト電極に含まれる前記Rh層のAr濃度は、1×10 18 /cm 3 未満であり、
前記p側電流拡散層に含まれる前記Rh層のAr濃度は、1×10 18 /cm 3 以上である半導体発光素子。 - 前記p側電流拡散層は、前記第1TiN層と前記第2TiN層の間において交互に積層される複数のTi層および複数のRh層を含む、請求項1に記載の半導体発光素子。
- 前記p側電流拡散層上に設けられるp側パッド開口を有し、前記n型半導体層、前記活性層、前記p型半導体層および前記p側電流拡散層を被覆する誘電体保護層と、
前記p側パッド開口において前記p側電流拡散層と接続するp側パッド電極と、をさらに備え、
前記誘電体保護層は、第1誘電体層と、前記第1誘電体層とは異なる材料から構成され、前記第1誘電体層を被覆する第2誘電体層と、前記第2誘電体層とは異なる材料から構成され、前記第2誘電体層を被覆する第3誘電体層とを含む、請求項1または2に記載の半導体発光素子。 - n型AlGaN系半導体材料から構成されるn型半導体層上に、AlGaN系半導体材料から構成される活性層を形成する工程と、
前記活性層上にp型半導体層を形成する工程と、
前記p型半導体層の上面と接触するRh層を含むp側コンタクト電極を蒸着法により形成する工程と、
前記p側コンタクト電極の上面および側面と接触し、順に積層されるTiN層、Ti層、Rh層およびTiN層を含むp側電流拡散層をスパッタリング法により形成する工程と、を備え、
前記p側コンタクト電極に含まれる前記Rh層のAr濃度は、前記p側電流拡散層に含まれる前記Rh層のAr濃度よりも小さく、
前記p側コンタクト電極に含まれる前記Rh層のAr濃度は、1×10 18 /cm 3 未満であり、
前記p側電流拡散層に含まれる前記Rh層のAr濃度は、1×10 18 /cm 3 以上である、半導体発光素子の製造方法。
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TW111127666A TWI825869B (zh) | 2021-07-30 | 2022-07-25 | 半導體發光元件 |
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WO2010125810A1 (ja) | 2009-04-28 | 2010-11-04 | キヤノンアネルバ株式会社 | 半導体装置およびその製造方法 |
US20180212109A1 (en) | 2014-08-05 | 2018-07-26 | Seoul Viosys Co., Ltd. | Light-emitting diode and manufacturing method therefor |
JP2018142687A (ja) | 2017-02-28 | 2018-09-13 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP2019079982A (ja) | 2017-10-26 | 2019-05-23 | 日機装株式会社 | 半導体発光素子の製造方法 |
JP2021034473A (ja) | 2019-08-21 | 2021-03-01 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
JP6839320B1 (ja) | 2020-05-13 | 2021-03-03 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
JP6867536B1 (ja) | 2020-07-07 | 2021-04-28 | 日機装株式会社 | 半導体発光装置および半導体発光装置の製造方法 |
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WO2010125810A1 (ja) | 2009-04-28 | 2010-11-04 | キヤノンアネルバ株式会社 | 半導体装置およびその製造方法 |
US20180212109A1 (en) | 2014-08-05 | 2018-07-26 | Seoul Viosys Co., Ltd. | Light-emitting diode and manufacturing method therefor |
JP2018142687A (ja) | 2017-02-28 | 2018-09-13 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP2019079982A (ja) | 2017-10-26 | 2019-05-23 | 日機装株式会社 | 半導体発光素子の製造方法 |
JP2021034473A (ja) | 2019-08-21 | 2021-03-01 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
JP6839320B1 (ja) | 2020-05-13 | 2021-03-03 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
JP6867536B1 (ja) | 2020-07-07 | 2021-04-28 | 日機装株式会社 | 半導体発光装置および半導体発光装置の製造方法 |
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