JP7307662B2 - 半導体発光素子および半導体発光素子の製造方法 - Google Patents
半導体発光素子および半導体発光素子の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 205
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000000034 method Methods 0.000 title description 27
- 239000010410 layer Substances 0.000 claims description 382
- 239000011241 protective layer Substances 0.000 claims description 195
- 239000000463 material Substances 0.000 claims description 42
- 230000000149 penetrating effect Effects 0.000 claims description 17
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 10
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910002704 AlGaN Inorganic materials 0.000 claims 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 36
- 239000000758 substrate Substances 0.000 description 32
- 239000010936 titanium Substances 0.000 description 23
- 239000007789 gas Substances 0.000 description 18
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 17
- 238000001312 dry etching Methods 0.000 description 14
- 229910002601 GaN Inorganic materials 0.000 description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 13
- 238000005253 cladding Methods 0.000 description 13
- 238000005530 etching Methods 0.000 description 13
- 239000010948 rhodium Substances 0.000 description 11
- 239000000460 chlorine Substances 0.000 description 10
- 230000006870 function Effects 0.000 description 10
- 239000010931 gold Substances 0.000 description 9
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 8
- 229910052801 chlorine Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum compound Chemical class 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Description
Claims (9)
- n型AlGaN系半導体材料から構成されるn型半導体層と、
前記n型半導体層の第1上面に設けられ、AlGaN系半導体材料から構成される活性層と、
前記n型半導体層の第2上面と接触して設けられるn側コンタクト電極と、
前記活性層上に設けられるp型半導体層と、
前記p型半導体層の上面と接触し、Rhから構成されるp側コンタクト電極と、
前記p側コンタクト電極の上面および側面を被覆し、TiNから構成されるp側電極被覆層と、
前記p側電極被覆層の上面の一部に設けられる第1p側パッド開口を有し、前記第1p側パッド開口とは異なる箇所において前記p側電極被覆層の上面および側面を被覆し、SiO2またはSiONから構成される第1保護層と、
前記第1p側パッド開口と連通する第2p側パッド開口を有し、前記第2p側パッド開口とは異なる箇所において前記第1保護層、前記p型半導体層の側面および前記活性層の側面を被覆し、Al2O3から構成される第2保護層と、
前記第1p側パッド開口および前記第2p側パッド開口において前記p側電極被覆層と接触するp側パッド電極と、を備えることを特徴とする半導体発光素子。 - 前記第2保護層は、前記n型半導体層の前記第2上面の一部に設けられるn側コンタクト開口を有し、前記n側コンタクト開口とは異なる箇所にて前記n型半導体層の前記第2上面をさらに被覆し、
前記n側コンタクト電極は、前記n側コンタクト開口において前記n型半導体層の前記第2上面と接触し、前記n側コンタクト開口の外縁において前記第2保護層の上に重なることを特徴とする請求項1に記載の半導体発光素子。 - 前記p側電極被覆層は、前記p型半導体層と接触するように設けられ、
前記第1保護層は、前記p側コンタクト電極および前記p側電極被覆層が設けられる箇所とは異なる箇所において前記p型半導体層の前記上面をさらに被覆することを特徴とする請求項1または2に記載の半導体発光素子。 - 前記p側コンタクト電極上に設けられる第3p側パッド開口および前記n側コンタクト電極上に設けられるn側パッド開口を有し、前記第3p側パッド開口とは異なる箇所において前記第2保護層を被覆するとともに、前記n側パッド開口とは異なる箇所において前記n側コンタクト電極を被覆し、SiO2から構成される第3保護層と、
前記n側パッド開口に設けられるn側パッド電極と、をさらに備え、
前記p側パッド電極および前記n側パッド電極は、前記第3保護層の上に重なることを特徴とする請求項1から3のいずれか一項に記載の半導体発光素子。 - 前記n側コンタクト電極の上面および側面を被覆し、前記第2保護層と接触するTiNで構成されるn側電極被覆層をさらに備え、
前記第3保護層は、前記n側パッド開口とは異なる箇所において前記n側電極被覆層を被覆し、
前記n側パッド電極は、前記n側パッド開口において前記n側電極被覆層と接触することを特徴とする請求項4に記載の半導体発光素子。 - 前記第1保護層は、前記活性層および前記n型半導体層と接触しない、請求項1から5のいずれか一項に記載の半導体発光素子。
- n型AlGaN系半導体材料から構成されるn型半導体層の第1上面にAlGaN系半導体材料から構成される活性層を形成する工程と、
前記活性層上にp型半導体層を形成する工程と、
前記p型半導体層の上面と接触し、Rhから構成されるp側コンタクト電極を形成する工程と、
前記p側コンタクト電極を被覆し、TiNから構成されるp側電極被覆層を形成する工程と、
前記p型半導体層の上面を被覆するとともに、前記p側電極被覆層の上面および側面を被覆し、SiO2またはSiONから構成される第1保護層を形成する工程と、
前記p側コンタクト電極が形成された領域とは異なる領域において前記第1保護層、前記p型半導体層および前記活性層を除去し、前記n型半導体層の第2上面を露出させる工程と、
前記第1保護層、前記p型半導体層の側面および前記活性層の側面を被覆し、Al2O3から構成される第2保護層を形成する工程と、
前記n型半導体層の前記第2上面と接触するn側コンタクト電極を形成する工程と、
前記p側コンタクト電極上の前記第2保護層を貫通する第2p側パッド開口を形成する工程と、
前記p側コンタクト電極上の前記第1保護層を貫通し、前記第2p側パッド開口と連通する第1p側パッド開口を形成する工程と、
前記第1p側パッド開口にて露出する前記p側電極被覆層に接触するp側パッド電極を形成する工程と、を備えることを特徴とする半導体発光素子の製造方法。 - 前記第2保護層は、前記n型半導体層の前記第2上面をさらに被覆するよう形成され、
前記n型半導体層の前記第2上面の一部に設けられる前記第2保護層を貫通するn側コンタクト開口を形成する工程をさらに備え、
前記n側コンタクト電極は、前記n側コンタクト開口の外縁において前記第2保護層の上に重なるように形成されることを特徴とする請求項7に記載の半導体発光素子の製造方法。 - 前記第1p側パッド開口の形成後、前記第1p側パッド開口において露出する前記p側電極被覆層、前記第2保護層および前記n側コンタクト電極を被覆し、SiO2で構成される第3保護層を形成する工程と、
前記p側コンタクト電極上の前記第3保護層を貫通する第3p側パッド開口を形成するとともに、前記n側コンタクト電極上の前記第3保護層を貫通するn側パッド開口を形成する工程と、
前記n側パッド開口にn側パッド電極を形成する工程と、をさらに備え、
前記p側パッド電極は、前記第3p側パッド開口の形成後に形成され、
前記p側パッド電極および前記n側パッド電極は、前記第3保護層の上に重なることを特徴とする請求項7または8に記載の半導体発光素子の製造方法。
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JP2019198541A JP7307662B2 (ja) | 2019-10-31 | 2019-10-31 | 半導体発光素子および半導体発光素子の製造方法 |
US17/012,973 US11626540B2 (en) | 2019-10-31 | 2020-09-04 | Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element |
TW109131211A TW202133463A (zh) | 2019-10-31 | 2020-09-11 | 半導體發光元件以及半導體發光元件的製造方法 |
US18/118,497 US20230223499A1 (en) | 2019-10-31 | 2023-03-07 | Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element |
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WO2022050510A1 (ko) * | 2020-09-04 | 2022-03-10 | 주식회사 포톤웨이브 | 자외선 발광소자 및 이를 포함하는 발광소자 패키지 |
JP2022172792A (ja) * | 2021-05-07 | 2022-11-17 | 日機装株式会社 | 窒化物半導体発光素子 |
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JP7344936B2 (ja) * | 2021-07-30 | 2023-09-14 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
JP7339994B2 (ja) * | 2021-11-12 | 2023-09-06 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
CN114141922A (zh) * | 2021-12-01 | 2022-03-04 | 聚灿光电科技(宿迁)有限公司 | 一种led芯片及其制造方法 |
JP7296513B1 (ja) | 2021-12-07 | 2023-06-22 | Dowaエレクトロニクス株式会社 | 紫外発光素子及びその製造方法 |
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