JP2019079982A - 半導体発光素子の製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 238000000137 annealing Methods 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 34
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 17
- 239000010936 titanium Substances 0.000 claims abstract description 13
- 238000001312 dry etching Methods 0.000 claims abstract description 11
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 4
- 238000005253 cladding Methods 0.000 claims description 64
- 238000004544 sputter deposition Methods 0.000 claims description 12
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 170
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 23
- 239000000758 substrate Substances 0.000 description 20
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 12
- 238000010894 electron beam technology Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- -1 AlGaN Chemical compound 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
Description
Claims (7)
- n型窒化アルミニウムガリウム(AlGaN)系半導体材料のn型クラッド層上にチタン(Ti)を含む第1金属層を形成し、前記第1金属層上にアルミニウム(Al)を含む第2金属層を形成する工程と、
前記第1金属層および前記第2金属層を560℃以上650℃以下の温度でアニールしてn側電極を形成する工程と、を備え、
前記第2金属層は、アニール前の膜密度が2.7g/cm3未満であることを特徴とする半導体発光素子の製造方法。 - 前記第2金属層は、スパッタリング法により形成されることを特徴とする請求項1に記載の半導体発光素子の製造方法。
- 前記第2金属層は、アニール後の算術平均粗さ(Ra)が5nm以下であることを特徴とする請求項1または2に記載の半導体発光素子の製造方法。
- 前記第1金属層の厚さは、10nm以下であり、前記n側電極は、前記n型クラッド層とのコンタクト抵抗が0.1Ω・cm2以下であることを特徴とする請求項1から3のいずれか一項に記載の半導体発光素子の製造方法。
- 前記n型クラッド層上にAlGaN系半導体材料の活性層を形成する工程と、
前記n型クラッド層の一部が露出するように前記活性層および前記n型クラッド層の一部をドライエッチングにより除去する工程と、をさらに備え、
前記n型クラッド層の一部は、50nm/分以下のエッチレートで除去され、
前記第1金属層は、ドライエッチング後に露出する前記n型クラッド層の露出面上に形成されることを特徴とする請求項1から4のいずれか一項に記載の半導体発光素子の製造方法。 - 前記n側電極は、前記n型クラッド層から入射する紫外光の反射率が30%以上となるよう構成されることを特徴とする請求項1から5のいずれか一項に記載の半導体発光素子の製造方法。
- 前記n型クラッド層は、窒化アルミニウム(AlN)のモル分率が25%以上であり、1×1018/cm3以上の濃度のシリコン(Si)を含み、
波長350nm以下の紫外光を発するよう構成されることを特徴とする請求項1から6のいずれか一項に記載の半導体発光素子の製造方法。
Priority Applications (4)
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JP2017206889A JP6640815B2 (ja) | 2017-10-26 | 2017-10-26 | 半導体発光素子の製造方法 |
KR1020207012349A KR102401209B1 (ko) | 2017-10-26 | 2018-09-28 | 반도체 발광 소자의 제조 방법 |
PCT/JP2018/036566 WO2019082603A1 (ja) | 2017-10-26 | 2018-09-28 | 半導体発光素子の製造方法 |
US16/857,853 US11575068B2 (en) | 2017-10-26 | 2020-04-24 | Method of manufacturing semiconductor light emitting element |
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JP2017206889A JP6640815B2 (ja) | 2017-10-26 | 2017-10-26 | 半導体発光素子の製造方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2023020629A (ja) * | 2021-07-30 | 2023-02-09 | 日機装株式会社 | 半導体発光素子 |
JP2023020627A (ja) * | 2021-07-30 | 2023-02-09 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
JP2023020628A (ja) * | 2021-07-30 | 2023-02-09 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
Families Citing this family (2)
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JP6640815B2 (ja) * | 2017-10-26 | 2020-02-05 | 日機装株式会社 | 半導体発光素子の製造方法 |
CN117878212A (zh) * | 2024-03-13 | 2024-04-12 | 山西中科潞安紫外光电科技有限公司 | 一种深紫外led倒装芯片及其制备方法 |
Citations (7)
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JP6674394B2 (ja) * | 2017-02-01 | 2020-04-01 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
JP6486401B2 (ja) * | 2017-03-08 | 2019-03-20 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
JP6640815B2 (ja) * | 2017-10-26 | 2020-02-05 | 日機装株式会社 | 半導体発光素子の製造方法 |
JP6689244B2 (ja) * | 2017-11-10 | 2020-04-28 | 日機装株式会社 | 半導体発光素子の製造方法 |
-
2017
- 2017-10-26 JP JP2017206889A patent/JP6640815B2/ja active Active
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2018
- 2018-09-28 WO PCT/JP2018/036566 patent/WO2019082603A1/ja active Application Filing
- 2018-09-28 KR KR1020207012349A patent/KR102401209B1/ko active IP Right Grant
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JPH09129930A (ja) * | 1995-08-31 | 1997-05-16 | Toshiba Corp | 化合物半導体を用いた青色発光素子の製造方法 |
JP2006202528A (ja) * | 2005-01-18 | 2006-08-03 | Hitachi Displays Ltd | 画像表示装置 |
JP2012227494A (ja) * | 2011-04-22 | 2012-11-15 | Panasonic Corp | 窒化物系半導体発光素子およびその製造方法 |
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JP2023020629A (ja) * | 2021-07-30 | 2023-02-09 | 日機装株式会社 | 半導体発光素子 |
JP2023020627A (ja) * | 2021-07-30 | 2023-02-09 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
JP2023020628A (ja) * | 2021-07-30 | 2023-02-09 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
JP7344937B2 (ja) | 2021-07-30 | 2023-09-14 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
JP7344936B2 (ja) | 2021-07-30 | 2023-09-14 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
JP7345524B2 (ja) | 2021-07-30 | 2023-09-15 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
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KR102401209B1 (ko) | 2022-05-24 |
US11575068B2 (en) | 2023-02-07 |
WO2019082603A1 (ja) | 2019-05-02 |
JP6640815B2 (ja) | 2020-02-05 |
US20200251611A1 (en) | 2020-08-06 |
KR20200055120A (ko) | 2020-05-20 |
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