JP2018085456A - 半導体発光素子の製造方法 - Google Patents
半導体発光素子の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000001312 dry etching Methods 0.000 claims abstract description 58
- 239000000463 material Substances 0.000 claims abstract description 36
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 31
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 15
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract 4
- 238000005253 cladding Methods 0.000 claims description 91
- 239000000460 chlorine Substances 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 13
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 7
- 229910052801 chlorine Inorganic materials 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 4
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 4
- 239000005049 silicon tetrachloride Substances 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 168
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 239000000758 substrate Substances 0.000 description 19
- 238000005530 etching Methods 0.000 description 18
- 229910002601 GaN Inorganic materials 0.000 description 14
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 12
- 230000000903 blocking effect Effects 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000001954 sterilising effect Effects 0.000 description 2
- -1 AlGaN Chemical compound 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H01L21/30621—Vapour phase etching
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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Abstract
【解決手段】半導体発光素子10の製造方法は、n型AlGaN系半導体材料のn型クラッド層24上にAlGaN系半導体材料の活性層26を形成する工程と、活性層26上にp型半導体層を形成する工程と、n型クラッド層24の一部領域が露出するように、p型半導体層、活性層26およびn型クラッド層24の一部をドライエッチングする工程と、n型クラッド層24の露出した一部領域に窒素原子(N)を反応させる工程と、窒素原子を反応させたn型クラッド層24の一部領域上にn側電極32を形成する工程と、を備える。
【選択図】図1
Description
Claims (5)
- n型AlGaN系半導体材料のn型クラッド層上にAlGaN系半導体材料の活性層を形成する工程と、
前記活性層上にp型半導体層を形成する工程と、
前記n型クラッド層の一部領域が露出するように、前記p型半導体層、前記活性層および前記n型クラッド層の一部をドライエッチングする工程と、
前記n型クラッド層の露出した前記一部領域に窒素原子(N)を反応させる工程と、
前記窒素原子を反応させた前記n型クラッド層の前記一部領域上にn側電極を形成する工程と、を備えることを特徴とする半導体発光素子の製造方法。 - 前記ドライエッチングする工程は、塩素(Cl2)、三塩化ホウ素(BCl3)および四塩化ケイ素(SiCl4)の少なくとも一つを含むガスを用いることを特徴とする請求項1に記載の半導体発光素子の製造方法。
- 前記窒素原子を反応させる工程は、アンモニア(NH3)を分解させることを含むことを特徴とする請求項1または2に記載の半導体発光素子の製造方法。
- 前記窒素原子を反応させる工程は、前記n型クラッド層を100℃以上1000℃以下の温度に加熱することを含むことを特徴とする請求項1から3のいずれか一項に記載の半導体発光素子の製造方法。
- 前記n型クラッド層は、AlNのモル分率が20%以上であることを特徴とする請求項1から4のいずれか一項に記載の半導体発光素子の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2016228137A JP2018085456A (ja) | 2016-11-24 | 2016-11-24 | 半導体発光素子の製造方法 |
PCT/JP2017/039607 WO2018096899A1 (ja) | 2016-11-24 | 2017-11-01 | 半導体発光素子の製造方法 |
TW106139152A TWI727116B (zh) | 2016-11-24 | 2017-11-13 | 半導體發光元件的製造方法 |
US16/422,587 US10854773B2 (en) | 2016-11-24 | 2019-05-24 | Method of manufacturing semiconductor light emitting device |
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JP2016228137A JP2018085456A (ja) | 2016-11-24 | 2016-11-24 | 半導体発光素子の製造方法 |
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US (1) | US10854773B2 (ja) |
JP (1) | JP2018085456A (ja) |
TW (1) | TWI727116B (ja) |
WO (1) | WO2018096899A1 (ja) |
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JP6640815B2 (ja) * | 2017-10-26 | 2020-02-05 | 日機装株式会社 | 半導体発光素子の製造方法 |
JP7146589B2 (ja) * | 2018-11-15 | 2022-10-04 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
Citations (7)
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JPH10242576A (ja) * | 1997-02-26 | 1998-09-11 | Matsushita Electric Ind Co Ltd | 半導体発光素子の製造方法 |
JP2000349067A (ja) * | 1999-06-01 | 2000-12-15 | Nippon Telegr & Teleph Corp <Ntt> | 半導体のドライエッチング方法 |
US20020155691A1 (en) * | 2001-03-23 | 2002-10-24 | Lee Jong Lam | Method of fabricating ohmic contact on n-type gallium nitride (GaN) of room temperature by plasma surface treatment |
JP2004104097A (ja) * | 2003-08-29 | 2004-04-02 | Sumitomo Chem Co Ltd | 3−5族化合物半導体のエッチングダメージ回復方法。 |
JP2004165564A (ja) * | 2002-11-15 | 2004-06-10 | Showa Denko Kk | 窒化ガリウム結晶基板の製造方法と窒化ガリウム結晶基板及びそれを備えた窒化ガリウム系半導体素子 |
JP2008218826A (ja) * | 2007-03-06 | 2008-09-18 | Sharp Corp | 窒化物半導体素子の製造方法 |
WO2013046419A1 (ja) * | 2011-09-30 | 2013-04-04 | 創光科学株式会社 | 窒化物半導体素子及びその製造方法 |
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JPH08293489A (ja) * | 1995-04-25 | 1996-11-05 | Sharp Corp | 窒化ガリウム系化合物半導体のドライエッチング方法 |
JP3748998B2 (ja) | 1997-10-01 | 2006-02-22 | 三洋電機株式会社 | エッチング方法および半導体素子の製造方法 |
JP2001144325A (ja) * | 1999-11-12 | 2001-05-25 | Sony Corp | 窒化物系iii−v族化合物半導体の製造方法および半導体素子の製造方法 |
JP2006059956A (ja) | 2004-08-19 | 2006-03-02 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP5594530B2 (ja) | 2010-10-21 | 2014-09-24 | 創光科学株式会社 | 窒化物半導体紫外線発光素子 |
JP6055799B2 (ja) | 2014-07-29 | 2016-12-27 | 株式会社豊田中央研究所 | 半導体装置とその製造方法 |
JP6537883B2 (ja) * | 2015-05-14 | 2019-07-03 | スタンレー電気株式会社 | 半導体発光素子および半導体発光素子アレイ |
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- 2016-11-24 JP JP2016228137A patent/JP2018085456A/ja active Pending
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2017
- 2017-11-01 WO PCT/JP2017/039607 patent/WO2018096899A1/ja active Application Filing
- 2017-11-13 TW TW106139152A patent/TWI727116B/zh active
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10242576A (ja) * | 1997-02-26 | 1998-09-11 | Matsushita Electric Ind Co Ltd | 半導体発光素子の製造方法 |
JP2000349067A (ja) * | 1999-06-01 | 2000-12-15 | Nippon Telegr & Teleph Corp <Ntt> | 半導体のドライエッチング方法 |
US20020155691A1 (en) * | 2001-03-23 | 2002-10-24 | Lee Jong Lam | Method of fabricating ohmic contact on n-type gallium nitride (GaN) of room temperature by plasma surface treatment |
JP2004165564A (ja) * | 2002-11-15 | 2004-06-10 | Showa Denko Kk | 窒化ガリウム結晶基板の製造方法と窒化ガリウム結晶基板及びそれを備えた窒化ガリウム系半導体素子 |
JP2004104097A (ja) * | 2003-08-29 | 2004-04-02 | Sumitomo Chem Co Ltd | 3−5族化合物半導体のエッチングダメージ回復方法。 |
JP2008218826A (ja) * | 2007-03-06 | 2008-09-18 | Sharp Corp | 窒化物半導体素子の製造方法 |
WO2013046419A1 (ja) * | 2011-09-30 | 2013-04-04 | 創光科学株式会社 | 窒化物半導体素子及びその製造方法 |
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TWI727116B (zh) | 2021-05-11 |
WO2018096899A1 (ja) | 2018-05-31 |
US20190280150A1 (en) | 2019-09-12 |
US10854773B2 (en) | 2020-12-01 |
TW201828507A (zh) | 2018-08-01 |
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