JP6640815B2 - 半導体発光素子の製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 55
- 238000000034 method Methods 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000005253 cladding Methods 0.000 claims description 57
- 229910052751 metal Inorganic materials 0.000 claims description 47
- 239000002184 metal Substances 0.000 claims description 47
- 238000000137 annealing Methods 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 32
- 229910002601 GaN Inorganic materials 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 11
- 238000001312 dry etching Methods 0.000 claims description 10
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 169
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 23
- 239000000758 substrate Substances 0.000 description 20
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 12
- 230000008018 melting Effects 0.000 description 8
- 238000002844 melting Methods 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- -1 AlGaN Chemical compound 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Claims (6)
- 窒化アルミニウム(AlN)のモル分率が40%以上であるn型窒化アルミニウムガリウム(AlGaN)系半導体材料のn型クラッド層上にチタン(Ti)層である第1金属層を形成し、前記第1金属層上にアルミニウム(Al)層である第2金属層を形成する工程と、
前記第1金属層および前記第2金属層を560℃以上600℃以下の温度でアニールしてn側電極を形成する工程と、を備え、
前記第1金属層の厚さは、10nm以下であり、
前記第2金属層は、アニール前の膜密度が2.6g/cm 3 以上2.7g/cm3未満であることを特徴とする半導体発光素子の製造方法。 - 前記第2金属層は、スパッタリング法により形成されることを特徴とする請求項1に記載の半導体発光素子の製造方法。
- 前記第2金属層は、アニール後の算術平均粗さ(Ra)が5nm以下であることを特徴とする請求項1または2に記載の半導体発光素子の製造方法。
- 前記n側電極は、前記n型クラッド層とのコンタクト抵抗が0.1Ω・cm2以下であり、前記n型クラッド層から入射する紫外光の反射率が30%以上であることを特徴とする請求項1から3のいずれか一項に記載の半導体発光素子の製造方法。
- 前記n型クラッド層上にAlGaN系半導体材料の活性層を形成する工程と、
前記n型クラッド層の一部が露出するように前記活性層および前記n型クラッド層の一部をドライエッチングにより除去する工程と、をさらに備え、
前記n型クラッド層の一部は、50nm/分以下のエッチレートで除去され、
前記第1金属層は、ドライエッチング後に露出する前記n型クラッド層の露出面上に形成されることを特徴とする請求項1から4のいずれか一項に記載の半導体発光素子の製造方法。 - 前記半導体発光素子は、波長350nm以下の紫外光を発するよう構成されることを特徴とする請求項1から5のいずれか一項に記載の半導体発光素子の製造方法。
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JP2017206889A JP6640815B2 (ja) | 2017-10-26 | 2017-10-26 | 半導体発光素子の製造方法 |
PCT/JP2018/036566 WO2019082603A1 (ja) | 2017-10-26 | 2018-09-28 | 半導体発光素子の製造方法 |
KR1020207012349A KR102401209B1 (ko) | 2017-10-26 | 2018-09-28 | 반도체 발광 소자의 제조 방법 |
US16/857,853 US11575068B2 (en) | 2017-10-26 | 2020-04-24 | Method of manufacturing semiconductor light emitting element |
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JP6640815B2 (ja) * | 2017-10-26 | 2020-02-05 | 日機装株式会社 | 半導体発光素子の製造方法 |
JP7345524B2 (ja) * | 2021-07-30 | 2023-09-15 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
JP7344937B2 (ja) * | 2021-07-30 | 2023-09-14 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
JP7344936B2 (ja) * | 2021-07-30 | 2023-09-14 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
CN117878212B (zh) * | 2024-03-13 | 2024-06-21 | 山西中科潞安紫外光电科技有限公司 | 一种深紫外led倒装芯片及其制备方法 |
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JP3165374B2 (ja) * | 1995-08-31 | 2001-05-14 | 株式会社東芝 | 化合物半導体の電極の形成方法 |
JP2006202528A (ja) * | 2005-01-18 | 2006-08-03 | Hitachi Displays Ltd | 画像表示装置 |
US8044427B2 (en) * | 2008-06-24 | 2011-10-25 | Dicon Fiberoptics, Inc. | Light emitting diode submount with high thermal conductivity for high power operation |
JP5594530B2 (ja) | 2010-10-21 | 2014-09-24 | 創光科学株式会社 | 窒化物半導体紫外線発光素子 |
JP5641505B2 (ja) * | 2011-04-22 | 2014-12-17 | パナソニックIpマネジメント株式会社 | 窒化物系半導体発光素子の製造方法 |
US9281439B2 (en) * | 2011-09-30 | 2016-03-08 | Soko Kagaku Co., Ltd. | Nitride semiconductor element and method for producing same |
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JP6165602B2 (ja) * | 2013-11-28 | 2017-07-19 | スタンレー電気株式会社 | n型負電極の形成方法、およびIII族窒化物半導体発光素子 |
US10147848B2 (en) * | 2015-10-01 | 2018-12-04 | Sensor Electronic Technology, Inc. | Contact configuration for optoelectronic device |
JP2018085456A (ja) * | 2016-11-24 | 2018-05-31 | 日機装株式会社 | 半導体発光素子の製造方法 |
JP6404890B2 (ja) * | 2016-11-24 | 2018-10-17 | 日機装株式会社 | 半導体発光素子の製造方法 |
JP6674394B2 (ja) * | 2017-02-01 | 2020-04-01 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
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JP6640815B2 (ja) * | 2017-10-26 | 2020-02-05 | 日機装株式会社 | 半導体発光素子の製造方法 |
JP6689244B2 (ja) * | 2017-11-10 | 2020-04-28 | 日機装株式会社 | 半導体発光素子の製造方法 |
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US20200251611A1 (en) | 2020-08-06 |
KR102401209B1 (ko) | 2022-05-24 |
JP2019079982A (ja) | 2019-05-23 |
WO2019082603A1 (ja) | 2019-05-02 |
KR20200055120A (ko) | 2020-05-20 |
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