WO2009136719A3 - 발광 소자 및 그 제조방법 - Google Patents
발광 소자 및 그 제조방법 Download PDFInfo
- Publication number
- WO2009136719A3 WO2009136719A3 PCT/KR2009/002354 KR2009002354W WO2009136719A3 WO 2009136719 A3 WO2009136719 A3 WO 2009136719A3 KR 2009002354 W KR2009002354 W KR 2009002354W WO 2009136719 A3 WO2009136719 A3 WO 2009136719A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- emitting element
- production method
- method therefor
- electrically conductive
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/991,090 US8455276B2 (en) | 2008-05-05 | 2009-05-04 | Light emitting element and a production method therefor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2008-0041617 | 2008-05-05 | ||
KR1020080041617A KR20090115906A (ko) | 2008-05-05 | 2008-05-05 | 그룹 3족 질화물계 반도체 발광다이오드 소자를 위한 표면요철 형성 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009136719A2 WO2009136719A2 (ko) | 2009-11-12 |
WO2009136719A3 true WO2009136719A3 (ko) | 2010-02-25 |
Family
ID=41265145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2009/002354 WO2009136719A2 (ko) | 2008-05-05 | 2009-05-04 | 발광 소자 및 그 제조방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8455276B2 (ko) |
KR (1) | KR20090115906A (ko) |
WO (1) | WO2009136719A2 (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9082892B2 (en) * | 2007-06-11 | 2015-07-14 | Manulius IP, Inc. | GaN Based LED having reduced thickness and method for making the same |
US8802461B2 (en) | 2011-03-22 | 2014-08-12 | Micron Technology, Inc. | Vertical light emitting devices with nickel silicide bonding and methods of manufacturing |
KR102098295B1 (ko) * | 2013-07-29 | 2020-04-07 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
JP6617401B2 (ja) * | 2014-09-30 | 2019-12-11 | 日亜化学工業株式会社 | 半導体発光素子 |
CN104867814B (zh) * | 2015-04-24 | 2017-09-22 | 厦门大学 | Ge薄膜键合制备绝缘层上锗的方法 |
CN106684218B (zh) * | 2017-03-01 | 2019-05-10 | 湘能华磊光电股份有限公司 | 一种提升发光效率的led外延生长方法 |
KR102338181B1 (ko) * | 2020-05-26 | 2021-12-10 | 주식회사 에스엘바이오닉스 | 반도체 발광소자를 제조하는 방법 |
CN112951955B (zh) * | 2021-01-26 | 2023-03-14 | 华灿光电(浙江)有限公司 | 紫外发光二极管外延片及其制备方法 |
CN114725256B (zh) * | 2022-06-09 | 2022-09-16 | 江西兆驰半导体有限公司 | 一种iii族氮化物外延结构及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003174191A (ja) * | 2001-06-25 | 2003-06-20 | Toshiba Corp | 半導体発光素子及びその製造方法 |
JP2005277374A (ja) * | 2004-02-26 | 2005-10-06 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子及びその製造方法 |
KR20060074387A (ko) * | 2004-12-27 | 2006-07-03 | 서울옵토디바이스주식회사 | 발광 소자 및 이의 제조 방법 |
KR20070088176A (ko) * | 2006-02-24 | 2007-08-29 | 삼성전기주식회사 | 질화물계 반도체 발광소자 및 그 제조방법 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW564584B (en) | 2001-06-25 | 2003-12-01 | Toshiba Corp | Semiconductor light emitting device |
TW573372B (en) * | 2002-11-06 | 2004-01-21 | Super Nova Optoelectronics Cor | GaN-based III-V group compound semiconductor light-emitting diode and the manufacturing method thereof |
JP4223797B2 (ja) * | 2002-12-19 | 2009-02-12 | 株式会社東芝 | 窒化物系半導体発光素子およびその製造方法 |
KR100631133B1 (ko) * | 2005-05-31 | 2006-10-02 | 삼성전기주식회사 | 수직구조 질화물계 반도체 발광 다이오드 |
TWI288979B (en) * | 2006-02-23 | 2007-10-21 | Arima Optoelectronics Corp | Light emitting diode bonded with metal diffusion and manufacturing method thereof |
US8053789B2 (en) * | 2006-12-28 | 2011-11-08 | Seoul Opto Device Co., Ltd. | Light emitting device and fabrication method thereof |
US7791090B2 (en) * | 2007-06-11 | 2010-09-07 | Bridgelux, Inc. | GaN based LED having reduced thickness and method for making the same |
TWI389354B (zh) * | 2009-04-29 | 2013-03-11 | Epistar Corp | 發光元件 |
EP2660883B1 (en) * | 2009-12-09 | 2019-03-27 | LG Innotek Co., Ltd. | Light emitting device, light emitting device manufacturing method, light emitting package, and lighting system |
KR101028277B1 (ko) * | 2010-05-25 | 2011-04-11 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 라이트 유닛 |
-
2008
- 2008-05-05 KR KR1020080041617A patent/KR20090115906A/ko not_active Application Discontinuation
-
2009
- 2009-05-04 WO PCT/KR2009/002354 patent/WO2009136719A2/ko active Application Filing
- 2009-05-04 US US12/991,090 patent/US8455276B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003174191A (ja) * | 2001-06-25 | 2003-06-20 | Toshiba Corp | 半導体発光素子及びその製造方法 |
JP2005277374A (ja) * | 2004-02-26 | 2005-10-06 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子及びその製造方法 |
KR20060074387A (ko) * | 2004-12-27 | 2006-07-03 | 서울옵토디바이스주식회사 | 발광 소자 및 이의 제조 방법 |
KR20070088176A (ko) * | 2006-02-24 | 2007-08-29 | 삼성전기주식회사 | 질화물계 반도체 발광소자 및 그 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
KR20090115906A (ko) | 2009-11-10 |
US8455276B2 (en) | 2013-06-04 |
US20110133243A1 (en) | 2011-06-09 |
WO2009136719A2 (ko) | 2009-11-12 |
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