WO2009145483A3 - 발광 소자 및 그 제조방법 - Google Patents

발광 소자 및 그 제조방법 Download PDF

Info

Publication number
WO2009145483A3
WO2009145483A3 PCT/KR2009/001710 KR2009001710W WO2009145483A3 WO 2009145483 A3 WO2009145483 A3 WO 2009145483A3 KR 2009001710 W KR2009001710 W KR 2009001710W WO 2009145483 A3 WO2009145483 A3 WO 2009145483A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
light
emitting element
production method
method therefor
Prior art date
Application number
PCT/KR2009/001710
Other languages
English (en)
French (fr)
Other versions
WO2009145483A2 (ko
Inventor
송준오
Original Assignee
Song June O
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020080030919A external-priority patent/KR101428066B1/ko
Priority claimed from KR20080031900A external-priority patent/KR101480551B1/ko
Application filed by Song June O filed Critical Song June O
Priority to US12/936,090 priority Critical patent/US8829554B2/en
Priority to JP2011502858A priority patent/JP5220916B2/ja
Priority to CN200980119150.1A priority patent/CN102106001B/zh
Priority to EP09754948.9A priority patent/EP2262012B1/en
Publication of WO2009145483A2 publication Critical patent/WO2009145483A2/ko
Publication of WO2009145483A3 publication Critical patent/WO2009145483A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Led Device Packages (AREA)

Abstract

실시예에 따른 발광 소자는 지지 기판; 상기 지지 기판 상에 반사층; 상기 반사층 상에 오믹 접촉층; 상기 오믹 접촉층 상에 제2 도전형의 반도체층, 활성층, 및 제1 도전형의 반도체층을 포함하는 발광 반도체층; 상기 발광 반도체층의 측면을 포위하는 제1 패시베이션층; 및 상기 제1 패시베이션층 및 상기 반사층의 측면을 포위하는 제2 패시베이션층을 포함한다.
PCT/KR2009/001710 2008-04-02 2009-04-02 발광 소자 및 그 제조방법 WO2009145483A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/936,090 US8829554B2 (en) 2008-04-02 2009-04-02 Light emitting element and a production method therefor
JP2011502858A JP5220916B2 (ja) 2008-04-02 2009-04-02 発光素子及びその製造方法
CN200980119150.1A CN102106001B (zh) 2008-04-02 2009-04-02 发光器件及其制造方法
EP09754948.9A EP2262012B1 (en) 2008-04-02 2009-04-02 Light-emitting diode and a method of manufacturing thereof

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020080030919A KR101428066B1 (ko) 2008-04-02 2008-04-02 수직구조 그룹 3족 질화물계 반도체 발광다이오드 소자 및이의 제조 방법
KR10-2008-0030919 2008-04-02
KR10-2008-0031900 2008-04-04
KR20080031900A KR101480551B1 (ko) 2008-04-04 2008-04-04 수직구조 그룹 3족 질화물계 반도체 발광다이오드 소자 및이의 제조 방법

Publications (2)

Publication Number Publication Date
WO2009145483A2 WO2009145483A2 (ko) 2009-12-03
WO2009145483A3 true WO2009145483A3 (ko) 2010-01-21

Family

ID=41377727

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/001710 WO2009145483A2 (ko) 2008-04-02 2009-04-02 발광 소자 및 그 제조방법

Country Status (5)

Country Link
US (1) US8829554B2 (ko)
EP (1) EP2262012B1 (ko)
JP (1) JP5220916B2 (ko)
CN (1) CN102106001B (ko)
WO (1) WO2009145483A2 (ko)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI403003B (zh) * 2009-10-02 2013-07-21 Chi Mei Lighting Tech Corp 發光二極體及其製造方法
KR101007137B1 (ko) * 2010-03-08 2011-01-10 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101039988B1 (ko) * 2010-03-09 2011-06-09 엘지이노텍 주식회사 발광 소자 및 그 제조방법
US8686461B2 (en) * 2011-01-03 2014-04-01 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode (LED) die having stepped substrates and method of fabrication
US9324905B2 (en) 2011-03-15 2016-04-26 Micron Technology, Inc. Solid state optoelectronic device with preformed metal support substrate
KR101795037B1 (ko) * 2011-06-10 2017-12-01 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
KR101795038B1 (ko) * 2011-06-10 2017-11-07 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
US8879598B2 (en) 2011-08-11 2014-11-04 Sensor Electronic Technology, Inc. Emitting device with compositional and doping inhomogeneities in semiconductor layers
US9385271B2 (en) 2011-08-11 2016-07-05 Sensor Electronic Technology, Inc. Device with transparent and higher conductive regions in lateral cross section of semiconductor layer
US10411156B2 (en) 2011-08-11 2019-09-10 Sensor Electronic Technology, Inc. Device with transparent and higher conductive regions in lateral cross section of semiconductor layer
US8787418B2 (en) 2011-08-11 2014-07-22 Sensor Electronic Technology, Inc. Emitting device with compositional and doping inhomogeneities in semiconductor layers
US9595634B2 (en) 2011-08-11 2017-03-14 Sensor Electronic Technology, Inc. Device with transparent and higher conductive regions in lateral cross section of semiconductor layer
JP5891437B2 (ja) * 2012-06-21 2016-03-23 パナソニックＩｐマネジメント株式会社 縦型構造発光素子の製造方法
JP5891436B2 (ja) * 2012-06-21 2016-03-23 パナソニックＩｐマネジメント株式会社 縦型構造発光素子の製造方法
EP2893565B1 (en) * 2012-09-05 2021-04-28 Lumileds LLC Laser de-bond of carrier wafer from device wafer
JP2014187325A (ja) * 2013-03-25 2014-10-02 Toshiba Corp 半導体発光装置及びその製造方法
DE102013107531A1 (de) * 2013-07-16 2015-01-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102013221788B4 (de) 2013-10-28 2021-05-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines Kontaktelements und eines optoelektronischen Bauelements
US9355881B2 (en) * 2014-02-18 2016-05-31 Infineon Technologies Ag Semiconductor device including a dielectric material
DE102015104138A1 (de) * 2015-03-19 2016-09-22 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement
KR102431750B1 (ko) * 2016-03-04 2022-08-12 삼성디스플레이 주식회사 플렉서블 표시장치 및 그의 제조방법
WO2018106030A1 (ko) * 2016-12-06 2018-06-14 엘지이노텍 주식회사 발광소자
US10840405B2 (en) * 2017-10-31 2020-11-17 Sivananthan Laboratories, Inc. Inductively coupled plasma for hydrogenation of type II superlattices
JP7068577B2 (ja) * 2018-03-28 2022-05-17 日亜化学工業株式会社 窒化物半導体発光素子
US11342479B2 (en) 2018-09-11 2022-05-24 Facebook Technologies, Llc Reducing bowing of materials before wafer-to-wafer bonding for LED manufacturing
US11145786B2 (en) 2018-09-11 2021-10-12 Facebook Technologies, Llc Methods for wafer-to-wafer bonding
US11056611B2 (en) * 2018-09-11 2021-07-06 Facebook Technologies, Llc Mesa formation for wafer-to-wafer bonding
US11164844B2 (en) * 2019-09-12 2021-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Double etch stop layer to protect semiconductor device layers from wet chemical etch
CN117174802B (zh) * 2023-11-02 2024-02-20 江西兆驰半导体有限公司 发光二极管的外延结构及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004281863A (ja) * 2003-03-18 2004-10-07 Nichia Chem Ind Ltd 窒化物半導体素子及びその製造方法
KR20070038272A (ko) * 2005-10-05 2007-04-10 삼성전기주식회사 수직구조 발광 다이오드의 제조 방법
JP2007511065A (ja) * 2003-11-04 2007-04-26 松下電器産業株式会社 半導体発光装置、照明モジュール、照明装置、および半導体発光装置の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10209569A (ja) * 1997-01-16 1998-08-07 Hewlett Packard Co <Hp> ｐ型窒化物半導体装置とその製造方法
JP3723434B2 (ja) * 1999-09-24 2005-12-07 三洋電機株式会社 半導体発光素子
US6562648B1 (en) 2000-08-23 2003-05-13 Xerox Corporation Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
US8294172B2 (en) * 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
US6841802B2 (en) * 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
DE10245631B4 (de) 2002-09-30 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement
US6987281B2 (en) * 2003-02-13 2006-01-17 Cree, Inc. Group III nitride contact structures for light emitting devices
KR20060059891A (ko) * 2003-06-04 2006-06-02 유명철 수직 구조 화합물 반도체 디바이스의 제조 방법
TWI240434B (en) * 2003-06-24 2005-09-21 Osram Opto Semiconductors Gmbh Method to produce semiconductor-chips
TWI288486B (en) * 2004-03-17 2007-10-11 Epistar Corp Light-emitting diode and method for manufacturing the same
US7259402B2 (en) * 2004-09-22 2007-08-21 Cree, Inc. High efficiency group III nitride-silicon carbide light emitting diode
JP2006100500A (ja) * 2004-09-29 2006-04-13 Sanken Electric Co Ltd 半導体発光素子及びその製造方法
US7646033B2 (en) * 2005-01-11 2010-01-12 Semileds Corporation Systems and methods for producing white-light light emitting diodes
JP5162909B2 (ja) * 2006-04-03 2013-03-13 豊田合成株式会社 半導体発光素子
JP4946195B2 (ja) 2006-06-19 2012-06-06 サンケン電気株式会社 半導体発光素子及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004281863A (ja) * 2003-03-18 2004-10-07 Nichia Chem Ind Ltd 窒化物半導体素子及びその製造方法
JP2007511065A (ja) * 2003-11-04 2007-04-26 松下電器産業株式会社 半導体発光装置、照明モジュール、照明装置、および半導体発光装置の製造方法
KR20070038272A (ko) * 2005-10-05 2007-04-10 삼성전기주식회사 수직구조 발광 다이오드의 제조 방법

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2262012A4 *

Also Published As

Publication number Publication date
EP2262012B1 (en) 2017-12-27
EP2262012A2 (en) 2010-12-15
JP5220916B2 (ja) 2013-06-26
US20110140076A1 (en) 2011-06-16
CN102106001A (zh) 2011-06-22
WO2009145483A2 (ko) 2009-12-03
CN102106001B (zh) 2014-02-12
JP2011517086A (ja) 2011-05-26
EP2262012A4 (en) 2014-12-31
US8829554B2 (en) 2014-09-09

Similar Documents

Publication Publication Date Title
WO2009145483A3 (ko) 발광 소자 및 그 제조방법
WO2009120044A3 (ko) 발광소자 및 그 제조방법
WO2009145502A3 (ko) 발광 소자
WO2009145465A3 (ko) 발광 소자 및 그 제조방법
WO2009154383A3 (ko) 반도체 발광소자
WO2009131401A3 (ko) 발광 소자 및 그 제조방법
WO2009128669A3 (ko) 발광 소자 및 그 제조방법
WO2006138465A3 (en) Light emitting diodes with reflective electrode and side electrode
WO2009134095A3 (ko) 발광 소자 및 그 제조방법
WO2009131319A3 (ko) 반도체 발광소자
WO2011083923A3 (en) Light emitting diode having electrode pads
WO2009014376A3 (en) Light emitting device package and method of manufacturing the same
WO2009136719A3 (ko) 발광 소자 및 그 제조방법
TW200746468A (en) Semiconductor light-emitting device and method of manufacturing the same
WO2010011074A3 (ko) 발광 다이오드 및 그 제조방법. 그리고 발광 소자 및 그 발광 소자 제조방법
WO2009075551A3 (en) Semiconductor light emitting device and method of fabricating the same
WO2009057983A3 (en) Light emitting device package and method for fabricating the same
EP2333852A3 (en) Light emitting device, light emitting device manufacturing method, light emitting package, and lighting system
WO2012039555A3 (en) Wafer-level light emitting diode package and method of fabricating the same
WO2009045082A3 (en) Light emitting device and method for fabricating the same
WO2010150114A3 (en) Contact for a semiconductor light emitting device
WO2011145850A3 (en) High efficiency light emitting diode and method of fabricating the same
WO2009002040A3 (en) Semiconductor light emitting device and method of fabricating the same
WO2012044011A3 (en) Wafer level light emitting diode package and method of fabricating the same
WO2009134029A3 (ko) 반도체 발광소자

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200980119150.1

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09754948

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2011502858

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2009754948

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 12936090

Country of ref document: US