JP5220916B2 - 発光素子及びその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 77
- 239000000758 substrate Substances 0.000 claims description 141
- 239000004065 semiconductor Substances 0.000 claims description 99
- 238000002161 passivation Methods 0.000 claims description 57
- 239000002131 composite material Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 6
- 238000000605 extraction Methods 0.000 claims description 6
- 230000004048 modification Effects 0.000 claims description 6
- 238000012986 modification Methods 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910002704 AlGaN Inorganic materials 0.000 claims 2
- 229910004205 SiNX Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 description 57
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 17
- 239000010931 gold Substances 0.000 description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 15
- 229910052737 gold Inorganic materials 0.000 description 13
- 229910052709 silver Inorganic materials 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 12
- 238000002955 isolation Methods 0.000 description 12
- 239000010948 rhodium Substances 0.000 description 12
- 229910002601 GaN Inorganic materials 0.000 description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 11
- 229910052759 nickel Inorganic materials 0.000 description 11
- 229910052763 palladium Inorganic materials 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 229910052697 platinum Inorganic materials 0.000 description 9
- 229910052703 rhodium Inorganic materials 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000006104 solid solution Substances 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- 229910052804 chromium Inorganic materials 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 229910052758 niobium Inorganic materials 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 8
- 239000011651 chromium Substances 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 229910052741 iridium Inorganic materials 0.000 description 6
- 229910052748 manganese Inorganic materials 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 229910052761 rare earth metal Inorganic materials 0.000 description 6
- 150000002910 rare earth metals Chemical class 0.000 description 6
- 229910052702 rhenium Inorganic materials 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 229910052720 vanadium Inorganic materials 0.000 description 6
- 229910052726 zirconium Inorganic materials 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- -1 SiCN Chemical compound 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 3
- 239000012777 electrically insulating material Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910000962 AlSiC Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000002144 chemical decomposition reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910017982 Ag—Si Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910019819 Cr—Si Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910018098 Ni-Si Inorganic materials 0.000 description 1
- 229910018529 Ni—Si Inorganic materials 0.000 description 1
- 229910021074 Pd—Si Inorganic materials 0.000 description 1
- 229910019596 Rh—Si Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
- Led Device Packages (AREA)
Description
第4実施形態に係る発光素子製造方法は、上記第3実施形態に係る発光素子製造方法と異なり、第1構造物100を製作する際、上記第2パッシベーション層800を形成する。
Claims (14)
- 支持基板と、
前記支持基板の上に反射層と、
前記反射層の上にオーミック接触層と、
前記オーミック接触層の上に第2導電型の半導体層、活性層、及び第1導電型の半導体層を含む発光半導体層と、
前記発光半導体層の側面を囲み、一端が前記発光半導体層と前記反射層との間に配置された第1パッシベーション層と、
前記第1パッシベーション層及び前記反射層の側面を囲む第2パッシベーション層と、
を含み、
前記支持基板は、第1支持基板と前記第1支持基板の下に配置された第2支持基板を含み、前記第2支持基板は前記第1支持基板より厚く形成されたことを特徴とする発光素子。 - 前記反射層と前記第1支持基板との間、及び前記第1支持基板と前記第2支持基板との間に形成されたウエハ結合層を含むことを特徴とする請求項1に記載の発光素子。
- 前記第2パッシベーション層は、前記第1パッシベーション層より厚いことを特徴とする請求項1または2に記載の発光素子。
- 前記支持基板と反射層との間にウエハ結合層を含むことを特徴とする請求項1に記載の発光素子。
- 前記第2パッシベーション層は、前記ウエハ結合層の少なくとも一部を囲むことを特徴とする請求項4に記載の発光素子。
- 前記第1パッシベーション層及び前記第2パッシベーション層は、シリコン酸化膜(SiO2)、アルミニウム酸化膜(Al2O3)、またはシリコン窒化膜(SiNx)のうち、いずれか1つで形成されたことを特徴とする請求項1〜5のいずれかに記載の発光素子。
- 前記第1パッシベーション層は、前記第2パッシベーション層と異なる物質で形成されたことを特徴とする請求項1〜6のいずれかに記載の発光素子。
- 前記発光半導体層と前記オーミック接触層との間にスーパーラティス構造(supper lattice structure)、第1導電型のドーパントが注入されたInGaN、GaN、AlInN、AlN、InN、またはAlGaNのうちのいずれか1つ、第2導電型のドーパントが注入されたInGaN、GaN、AlInN、AlN、InN、またはAlGaNのうちのいずれか1つ、または窒素極性で形成された表面(nitrogen-polar surface)を有するグループ3族窒化物系のうちのいずれか1つで形成される界面改質層を含むことを特徴とする請求項1〜7のいずれかに記載の発光素子。
- 前記発光半導体層の上に光抽出構造を含むことを特徴とする請求項1〜8のいずれかに記載の発光素子。
- 前記発光半導体層の上に第1電極層を含むことを特徴とする請求項1〜9のいずれかに記載の発光素子。
- 前記支持基板の下にオーミック電極層を含むことを特徴とする請求項1に記載の発光素子。
- 成長基板の上に発光半導体層、前記発光半導体層の上にオーミック接触層、前記オーミック接触層の上に反射層、及び前記発光半導体層の側面を囲み、一端が前記発光半導体層と前記反射層との間に配置された第1パッシベーション層を含む第1構造物を準備するステップと、
第1支持基板と、前記第1支持基板の上部及び下部にそれぞれ配置された第1及び第2ウエハ結合層を含む第2構造物を準備するステップと、
第1臨時基板に第3構造物を準備するステップと、
前記第2構造物を挟んで、第1及び第2ウエハ結合層を媒介にして、前記第1構造物、第2構造物、及び第3構造物を結合して第1複合構造物を形成するステップと、
前記第1複合構造物から前記第1臨時基板を分離して第2複合構造物を形成するステップと、
第2支持基板と、前記第2支持基板の上部及び下部にそれぞれ配置された第3及び第4ウエハ結合層を含む第4構造物を準備するステップと、
第2臨時基板に第5構造物を準備するステップと、
前記第4構造物を挟んで、前記第3及び第4ウエハ結合層を媒介にして、前記第2複合構造物、第4構造物、第5構造物を結合して第3複合構造物を形成するステップと、
前記第3複合構造物から前記成長基板を分離するステップと、
前記第1パッシベーション層と前記反射層の側面を囲む第2パッシベーション層を形成するステップと、
前記発光半導体層の上に第1電極層を形成するステップと、
前記第2臨時基板を除去するステップと、
を含み、
前記第2支持基板は前記第1支持基板より厚く形成されることを特徴とする発光素子の製造方法。 - 前記第1複合構造物を形成するステップは300℃乃至600℃の温度でなされることを特徴とする請求項12に記載の発光素子の製造方法。
- 成長基板の上に発光半導体層、前記発光半導体層の上にオーミック接触層、前記オーミック接触層の上に反射層、及び前記発光半導体層の側面を囲み、一端が前記発光半導体層と前記反射層との間に配置された第1パッシベーション層、前記第1パッシベーション層と前記反射層の側面を囲む第2パッシベーション層を含む第1構造物を準備するステップと、
第1支持基板と、前記第1支持基板の上部及び下部にそれぞれ配置された第1及び第2ウエハ結合層を含む第2構造物を準備するステップと、
第1臨時基板に第3構造物を準備するステップと、
前記第2構造物を挟んで、第1及び第2ウエハ結合層を媒介にして、前記第1構造物、第2構造物、及び第3構造物を結合して第1複合構造物を形成するステップと、
前記第1複合構造物から前記第1臨時基板を分離して第2複合構造物を形成するステップと、
第2支持基板と、前記第2支持基板の上部及び下部にそれぞれ配置された第3及び第4ウエハ結合層を含む第4構造物を準備するステップと、
第2臨時基板に第5構造物を準備するステップと、
前記第4構造物を挟んで、第3及び第4ウエハ結合層を媒介にして、前記第2複合構造物、第4構造物、及び第5構造物を結合して第3複合構造物を形成するステップと、
前記第3複合構造物から前記第2臨時基板を除去するステップと、
を含み、
前記第2支持基板は前記第1支持基板より厚く形成されることを特徴とする発光素子の製造方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2008-0030919 | 2008-04-02 | ||
KR1020080030919A KR101428066B1 (ko) | 2008-04-02 | 2008-04-02 | 수직구조 그룹 3족 질화물계 반도체 발광다이오드 소자 및이의 제조 방법 |
KR20080031900A KR101480551B1 (ko) | 2008-04-04 | 2008-04-04 | 수직구조 그룹 3족 질화물계 반도체 발광다이오드 소자 및이의 제조 방법 |
KR10-2008-0031900 | 2008-04-04 | ||
PCT/KR2009/001710 WO2009145483A2 (ko) | 2008-04-02 | 2009-04-02 | 발광 소자 및 그 제조방법 |
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JP2011517086A JP2011517086A (ja) | 2011-05-26 |
JP5220916B2 true JP5220916B2 (ja) | 2013-06-26 |
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US (1) | US8829554B2 (ja) |
EP (1) | EP2262012B1 (ja) |
JP (1) | JP5220916B2 (ja) |
CN (1) | CN102106001B (ja) |
WO (1) | WO2009145483A2 (ja) |
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KR101039988B1 (ko) * | 2010-03-09 | 2011-06-09 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
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KR101795037B1 (ko) * | 2011-06-10 | 2017-12-01 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
KR101795038B1 (ko) * | 2011-06-10 | 2017-11-07 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
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JP2011517086A (ja) | 2011-05-26 |
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US20110140076A1 (en) | 2011-06-16 |
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