WO2012039555A3 - Wafer-level light emitting diode package and method of fabricating the same - Google Patents

Wafer-level light emitting diode package and method of fabricating the same Download PDF

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Publication number
WO2012039555A3
WO2012039555A3 PCT/KR2011/006544 KR2011006544W WO2012039555A3 WO 2012039555 A3 WO2012039555 A3 WO 2012039555A3 KR 2011006544 W KR2011006544 W KR 2011006544W WO 2012039555 A3 WO2012039555 A3 WO 2012039555A3
Authority
WO
WIPO (PCT)
Prior art keywords
conductive type
type semiconductor
semiconductor layer
fabricating
wafer
Prior art date
Application number
PCT/KR2011/006544
Other languages
French (fr)
Other versions
WO2012039555A2 (en
Inventor
Won Cheol Seo
Dae Sung Kal
Original Assignee
Seoul Semiconductor Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seoul Semiconductor Co., Ltd. filed Critical Seoul Semiconductor Co., Ltd.
Priority to DE112011103186T priority Critical patent/DE112011103186T5/en
Priority to CN201180046150.0A priority patent/CN103119735B/en
Publication of WO2012039555A2 publication Critical patent/WO2012039555A2/en
Publication of WO2012039555A3 publication Critical patent/WO2012039555A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.
PCT/KR2011/006544 2010-09-24 2011-09-05 Wafer-level light emitting diode package and method of fabricating the same WO2012039555A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE112011103186T DE112011103186T5 (en) 2010-09-24 2011-09-05 Wafer-level light emitting diode unit and method of making the same
CN201180046150.0A CN103119735B (en) 2010-09-24 2011-09-05 Wafer LED packaging part and manufacture method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0092807 2010-09-24
KR1020100092807A KR101142965B1 (en) 2010-09-24 2010-09-24 Wafer-level light emitting diode package and method of fabricating the same

Publications (2)

Publication Number Publication Date
WO2012039555A2 WO2012039555A2 (en) 2012-03-29
WO2012039555A3 true WO2012039555A3 (en) 2012-06-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/006544 WO2012039555A2 (en) 2010-09-24 2011-09-05 Wafer-level light emitting diode package and method of fabricating the same

Country Status (4)

Country Link
KR (1) KR101142965B1 (en)
CN (6) CN105789236B (en)
DE (3) DE112011103186T5 (en)
WO (1) WO2012039555A2 (en)

Families Citing this family (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130258637A1 (en) * 2012-03-31 2013-10-03 Michael Dongxue Wang Wavelength-converting structure for a light source
CN103700682A (en) * 2012-05-04 2014-04-02 奇力光电科技股份有限公司 Light emitting diode structure and manufacturing method thereof
US8816383B2 (en) 2012-07-06 2014-08-26 Invensas Corporation High performance light emitting diode with vias
US8664681B2 (en) 2012-07-06 2014-03-04 Invensas Corporation Parallel plate slot emission array
WO2014025195A1 (en) * 2012-08-07 2014-02-13 서울바이오시스 주식회사 Wafer level light-emitting diode array and method for manufacturing same
US8765500B2 (en) * 2012-08-24 2014-07-01 Tsmc Solid State Lighting Ltd. Method and apparatus for fabricating phosphor-coated LED dies
JP5514274B2 (en) * 2012-09-03 2014-06-04 Ｄｏｗａエレクトロニクス株式会社 Group III nitride semiconductor light emitting device and method of manufacturing the same
WO2014105403A1 (en) * 2012-12-31 2014-07-03 Invensas Corporation High performance light emitting diode
TWI570955B (en) 2013-01-10 2017-02-11 晶元光電股份有限公司 Light-emitting device
US9577172B2 (en) * 2013-02-19 2017-02-21 Koninklijke Philips N.V. Light emitting die component formed by multilayer structures
DE102013102667A1 (en) * 2013-03-15 2014-10-02 Osram Opto Semiconductors Gmbh display device
US9577151B2 (en) * 2013-04-23 2017-02-21 Koninklijke Philips N.V. Side interconnect for light emitting device
KR102075147B1 (en) * 2013-06-05 2020-02-10 엘지이노텍 주식회사 Light emitting device and light emitting device package
KR102075655B1 (en) * 2013-06-24 2020-02-10 엘지이노텍 주식회사 Light emitting device and light emitting device package
TWI616004B (en) * 2013-11-27 2018-02-21 晶元光電股份有限公司 Semiconductor light-emitting device
US9761774B2 (en) 2014-12-16 2017-09-12 Epistar Corporation Light-emitting element with protective cushioning
KR102114932B1 (en) * 2013-11-12 2020-05-25 엘지이노텍 주식회사 Light emitting device and package including the device
KR102116986B1 (en) * 2014-02-17 2020-05-29 삼성전자 주식회사 LED package
CN104953000B (en) * 2014-03-27 2019-02-15 首尔伟傲世有限公司 Light emitting diode and light emitting device
KR102162437B1 (en) * 2014-05-15 2020-10-07 엘지이노텍 주식회사 Light emitting device and light emitting device package including the device
CN106663734B (en) * 2014-06-10 2019-06-14 世迈克琉明有限公司 Semiconductor light-emitting elements
KR102019914B1 (en) * 2014-06-11 2019-11-04 엘지이노텍 주식회사 Light Emitting Device
KR102197082B1 (en) * 2014-06-16 2020-12-31 엘지이노텍 주식회사 Light emitting device and light emitting device package including the same
US9543488B2 (en) 2014-06-23 2017-01-10 Seoul Viosys Co., Ltd. Light emitting device
KR102407827B1 (en) * 2015-01-27 2022-06-13 서울바이오시스 주식회사 Light emitting device
KR20160016361A (en) * 2014-08-05 2016-02-15 서울바이오시스 주식회사 Light emitting diode and method of fabricating the same
US10074777B2 (en) 2014-08-27 2018-09-11 Epistar Corporation Light emitting diode structure with dielectric reflective layer
KR101719628B1 (en) * 2014-10-27 2017-03-24 엘지이노텍 주식회사 Light emitting device package
KR102263066B1 (en) * 2014-11-12 2021-06-10 서울바이오시스 주식회사 Light emitting device
WO2016080768A1 (en) * 2014-11-18 2016-05-26 서울반도체 주식회사 Light emitting device and vehicular lamp comprising same
KR102309670B1 (en) * 2014-12-24 2021-10-07 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device, light emitting package and lighting system
CN105810672A (en) * 2014-12-30 2016-07-27 晶能光电（江西）有限公司 Flip LED chip and preparation method thereof
KR102402260B1 (en) * 2015-01-08 2022-05-27 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package
DE102015100578A1 (en) * 2015-01-15 2016-07-21 Osram Opto Semiconductors Gmbh Component and method for manufacturing a device
CN104681704B (en) * 2015-01-30 2017-08-29 大连德豪光电科技有限公司 Flip LED chips and preparation method thereof
KR101669122B1 (en) * 2015-02-26 2016-10-25 엘지이노텍 주식회사 Light emitting device package
US10270008B2 (en) 2015-03-16 2019-04-23 Seoul Viosys Co., Ltd. Light emitting element including metal bulk
JP2016174015A (en) * 2015-03-16 2016-09-29 株式会社東芝 Semiconductor light emitting element
KR102434778B1 (en) 2015-03-26 2022-08-23 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package
KR102474695B1 (en) * 2015-04-02 2022-12-06 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device
KR102458090B1 (en) * 2015-04-03 2022-10-24 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 light emitting device
CN104795474B (en) * 2015-04-20 2018-10-16 映瑞光电科技(上海)有限公司 High-power LED chip and its manufacturing method
KR102348511B1 (en) * 2015-05-11 2022-01-07 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 light emitting device
KR102380825B1 (en) 2015-05-29 2022-04-01 삼성전자주식회사 Semiconductor light emitting diode chip and light emitting device having the same
JP2017005191A (en) 2015-06-15 2017-01-05 株式会社東芝 Semiconductor light-emitting device
WO2016209025A2 (en) * 2015-06-26 2016-12-29 서울반도체 주식회사 Backlight unit using multi-cell light emitting diode
DE212016000126U1 (en) 2015-06-26 2018-01-29 Seoul Semiconductor Co., Ltd Backlight unit using multi-cell LEDs
KR102422246B1 (en) * 2015-07-30 2022-07-19 삼성전자주식회사 Light emitting diode(LED) package
DE102015114590B4 (en) 2015-09-01 2020-01-02 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic component
CN106558597B (en) 2015-09-30 2020-03-06 三星电子株式会社 Light emitting device package
KR102487989B1 (en) * 2015-09-30 2023-01-12 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device
KR102413224B1 (en) 2015-10-01 2022-06-24 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device, manufacturing method for light emittin device, and lighting module
CN105390583A (en) * 2015-10-28 2016-03-09 江苏新广联半导体有限公司 White light flip chip and preparation method thereof
CN106711316B (en) * 2015-11-18 2020-09-04 晶元光电股份有限公司 Light emitting element
KR102509144B1 (en) * 2015-12-28 2023-03-13 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device
KR102624111B1 (en) * 2016-01-13 2024-01-12 서울바이오시스 주식회사 UV Light Emitting Device
CN111129248B (en) * 2016-01-13 2024-03-08 首尔伟傲世有限公司 Ultraviolet light-emitting element
CN111128987A (en) * 2016-05-03 2020-05-08 首尔伟傲世有限公司 Light emitting diode
KR102559136B1 (en) * 2016-06-08 2023-07-25 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Semiconductor device and lighting apparatus
CN107689408B (en) * 2016-08-04 2020-03-17 展晶科技(深圳)有限公司 Light emitting diode flip chip die and display
KR102553630B1 (en) * 2016-08-11 2023-07-10 삼성전자주식회사 Led lighting device package and display apparatus using the same
CN107123707A (en) * 2017-04-25 2017-09-01 淮安澳洋顺昌光电技术有限公司 The preparation method of simple upside-down mounting high voltage LED chip
CN107146833B (en) * 2017-04-25 2020-05-29 淮安澳洋顺昌光电技术有限公司 Preparation method of LED flip chip
CN108877538B (en) * 2017-05-16 2021-08-24 英属开曼群岛商錼创科技股份有限公司 Micro light-emitting diode device and display panel
TWI790249B (en) * 2017-07-13 2023-01-21 大陸商蘇州樂琻半導體有限公司 Light emitting device and light emitting device package
US11749778B2 (en) 2017-08-25 2023-09-05 Suzhou Lekin Semiconductor Co., Ltd. Semiconductor device and semiconductor device package having an electrode recess with a different inclination angle than an inclination angle of an electrode in the recess
CN107658372A (en) * 2017-09-21 2018-02-02 山西飞虹微纳米光电科技有限公司 Deep etching Cutting Road flip LED chips and preparation method, LED display
KR101930006B1 (en) * 2017-09-26 2018-12-17 에피스타 코포레이션 Light-emitting device
US20190164945A1 (en) * 2017-11-27 2019-05-30 Seoul Viosys Co., Ltd. Light emitting diode for display and display apparatus having the same
FR3077160B1 (en) * 2018-01-19 2022-01-21 Commissariat Energie Atomique OPTOELECTRONIC DEVICE COMPRISING A GRID AND A CATHODE COUPLED TO EACH OTHER
CN117174732A (en) * 2018-01-23 2023-12-05 晶元光电股份有限公司 Light emitting element, method of manufacturing the same, and display module
CN108288666A (en) * 2018-01-26 2018-07-17 扬州乾照光电有限公司 A kind of light emitting diode and electronic equipment of included radiator structure
US10269711B1 (en) * 2018-03-16 2019-04-23 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and method for manufacturing the same
CN109031779B (en) * 2018-07-25 2024-06-11 京东方科技集团股份有限公司 Light emitting diode substrate, backlight module and display device
CN109326686A (en) * 2018-09-12 2019-02-12 聚灿光电科技（宿迁）有限公司 A kind of production method of upside-down mounting LED chip
CN109638124A (en) * 2018-12-11 2019-04-16 合肥彩虹蓝光科技有限公司 Flip-over type light-emitting diode chip for backlight unit and preparation method thereof
EP3970205A4 (en) * 2019-05-14 2023-05-31 Seoul Viosys Co., Ltd Light emitting package
JP2022528297A (en) * 2019-05-21 2022-06-09 ソウル バイオシス カンパニー リミテッド Light emitting element for display and display device having it
KR102170219B1 (en) * 2019-09-03 2020-10-26 엘지이노텍 주식회사 Light Emitting Device and light emitting device package
CN110931619A (en) * 2019-11-20 2020-03-27 厦门士兰明镓化合物半导体有限公司 Flip LED chip and manufacturing method thereof
CN110911537B (en) * 2019-11-29 2021-12-28 东莞市中晶半导体科技有限公司 Common cathode LED chip and manufacturing method thereof
CN111416027B (en) * 2020-04-27 2022-08-12 厦门三安光电有限公司 Flip-chip high-voltage light-emitting diode and light-emitting device
CN112670391A (en) * 2020-12-31 2021-04-16 深圳第三代半导体研究院 Light emitting diode and manufacturing method thereof
CN113921673B (en) * 2021-08-26 2023-10-20 深圳市隆利科技股份有限公司 Light emitting diode for display
CN116230828A (en) * 2021-09-27 2023-06-06 厦门三安光电有限公司 Light emitting diode and light emitting device
KR20230048948A (en) * 2021-10-05 2023-04-12 삼성전자주식회사 Semiconductor light emitting device, display apparatus including the same, and method of manufacturaing the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100838197B1 (en) * 2007-08-10 2008-06-16 서울옵토디바이스주식회사 Light emitting diode with improved current spreading performance
US20090283787A1 (en) * 2007-11-14 2009-11-19 Matthew Donofrio Semiconductor light emitting diodes having reflective structures and methods of fabricating same
KR20100016631A (en) * 2007-04-26 2010-02-12 오스람 옵토 세미컨덕터스 게엠베하 Optoelectronic component and method for producing a plurality of optoelectronic components
KR20100036617A (en) * 2008-09-30 2010-04-08 서울옵토디바이스주식회사 Light emitting device and method of fabricating the same
KR20100079843A (en) * 2008-12-31 2010-07-08 서울옵토디바이스주식회사 Light emitting device having plurality of non-polar light emitting cells and method of fabricating the same

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6463088B1 (en) * 2000-07-07 2002-10-08 Lucent Technologies Inc. Mesa geometry semiconductor light emitter having chalcogenide dielectric coating
US6630689B2 (en) * 2001-05-09 2003-10-07 Lumileds Lighting, U.S. Llc Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa
CN100421266C (en) 2002-08-29 2008-09-24 首尔半导体股份有限公司 Light-emitting device having light-emitting elements
JP4143732B2 (en) * 2002-10-16 2008-09-03 スタンレー電気株式会社 In-vehicle wavelength converter
US7179670B2 (en) * 2004-03-05 2007-02-20 Gelcore, Llc Flip-chip light emitting diode device without sub-mount
JP2005347622A (en) * 2004-06-04 2005-12-15 Seiko Epson Corp Semiconductor device, circuit board and electronic equipment
US9368428B2 (en) * 2004-06-30 2016-06-14 Cree, Inc. Dielectric wafer level bonding with conductive feed-throughs for electrical connection and thermal management
CN100365834C (en) * 2004-08-02 2008-01-30 晶元光电股份有限公司 LED with hot channel bonding layer
JP3904571B2 (en) * 2004-09-02 2007-04-11 ローム株式会社 Semiconductor light emitting device
US7821023B2 (en) * 2005-01-10 2010-10-26 Cree, Inc. Solid state lighting component
US7736945B2 (en) 2005-06-09 2010-06-15 Philips Lumileds Lighting Company, Llc LED assembly having maximum metal support for laser lift-off of growth substrate
KR100896576B1 (en) * 2006-02-24 2009-05-07 삼성전기주식회사 Nitride-based semiconductor light emitting device and method of manufacturing the same
US7777240B2 (en) * 2006-10-17 2010-08-17 Epistar Corporation Optoelectronic device
KR100818466B1 (en) * 2007-02-13 2008-04-02 삼성전기주식회사 Light emitting devices
KR101423723B1 (en) * 2007-10-29 2014-08-04 서울바이오시스 주식회사 Light emitting diode package
EP2245667B1 (en) * 2008-02-29 2018-05-09 OSRAM Opto Semiconductors GmbH Monolithic, optoelectronic semi-conductor body and method for the production thereof
CN101685842B (en) * 2008-09-25 2012-12-05 晶元光电股份有限公司 Optoelectronic semiconductor device
TWI464900B (en) * 2008-11-26 2014-12-11 Epistar Corp Optoelectronic semiconductor device
JP4724222B2 (en) * 2008-12-12 2011-07-13 株式会社東芝 Method for manufacturing light emitting device
KR20100076083A (en) * 2008-12-17 2010-07-06 서울반도체 주식회사 Light emitting diode having plurality of light emitting cells and method of fabricating the same
CN101764183A (en) * 2008-12-23 2010-06-30 启耀光电股份有限公司 Illuminating device
TWI473246B (en) * 2008-12-30 2015-02-11 Epistar Corp A chip level package of light-emitting diode
CN101937962A (en) * 2010-07-30 2011-01-05 晶科电子（广州）有限公司 LED packaging structure and packaging method thereof
JP2012054423A (en) * 2010-09-01 2012-03-15 Hitachi Cable Ltd Light-emitting diode

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100016631A (en) * 2007-04-26 2010-02-12 오스람 옵토 세미컨덕터스 게엠베하 Optoelectronic component and method for producing a plurality of optoelectronic components
KR100838197B1 (en) * 2007-08-10 2008-06-16 서울옵토디바이스주식회사 Light emitting diode with improved current spreading performance
US20090283787A1 (en) * 2007-11-14 2009-11-19 Matthew Donofrio Semiconductor light emitting diodes having reflective structures and methods of fabricating same
KR20100036617A (en) * 2008-09-30 2010-04-08 서울옵토디바이스주식회사 Light emitting device and method of fabricating the same
KR20100079843A (en) * 2008-12-31 2010-07-08 서울옵토디바이스주식회사 Light emitting device having plurality of non-polar light emitting cells and method of fabricating the same

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