CN101685842B - Optoelectronic semiconductor device - Google Patents
Optoelectronic semiconductor device Download PDFInfo
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- CN101685842B CN101685842B CN 200810165854 CN200810165854A CN101685842B CN 101685842 B CN101685842 B CN 101685842B CN 200810165854 CN200810165854 CN 200810165854 CN 200810165854 A CN200810165854 A CN 200810165854A CN 101685842 B CN101685842 B CN 101685842B
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Abstract
The embodiment of the invention relates to an optoelectronic semiconductor device comprising an energy conversion system, a contact layer and two or more discontinuous regions. The energy conversion system is used for converting optical energy and electrical energy and provided with a first side; the contact layer is formed at the first side of the energy conversion system and comprises an outer boundary and at least one ohm contact region, wherein the ohm contact can be formed between the ohm contact region and the energy conversion system; and the two or more discontinuous regions are integrated with the contact layer to form at least one pattern on the energy conversion system.
Description
Technical field
The present invention relates to a kind of opto-semiconductor device, especially about a kind of opto-semiconductor device with contact layer and locus of discontinuity, and the pattern layout relevant with locus of discontinuity.
Background technology
A kind of structure of known luminescence diode comprises growth substrate, n type semiconductor layer, p type semiconductor layer, and is positioned at the luminescent layer between this two semiconductor layer.The reflector that stems from luminescent layer light in order to reflection can optionally be formed in this structure.Be optics, the electricity that improves light-emitting diode, the one of which at least that reaches mechanical characteristic; A kind of material after suitably selecting can be in order to substitute growth substrate with the carrier as other structures of carrying except that growth substrate, and for example: metal or silicon can be used for replacing the sapphire substrate of growing nitride.Growth substrate can use modes such as etching, grinding or laser remove.Yet growth substrate also possibly all or only partly kept and combined with carrier.In addition, the printing opacity oxide also can be integrated in the light emitting diode construction and disperse performance to promote electric current.
Disclose a kind of light-emitting component 100 of high-luminous-efficiency in this case applicant's the I237903 TaiWan, China patent.As shown in Figure 1, the structure of light-emitting component 100 comprises sapphire substrate 110, nitride resilient coating 120, n type nitride-based semiconductor lamination 130, nitride multiple quantum trap luminescent layer 140, p type nitride-based semiconductor lamination 150, reaches oxidic transparent conductive layers 160.In addition, form hexagonal taper hole cave structure 1501 and on the surface of p type nitride-based semiconductor lamination 150 oriented oxide transparency conducting layers 160.The inner surface of hexagonal taper hole cave structure 1501 be prone to as tin indium oxide (ITO), cadmium tin, antimony tin, indium zinc oxide, zinc oxide aluminum, with the oxidic transparent conductive layers 160 formation ohmic contact of zinc-tin oxide etc.Therefore, the forward voltage of light-emitting component 100 is maintained in a lower level, and also can promote light extraction efficient through hexagonal taper hole cave structure 1501.
ITO can be formed at hexagonal taper hole cave structure 1501, semiconductor layer or its on the two through electron beam evaporation plating method (Electron Beam Evaporation) or sputtering method (Sputtering).The two also possibly be not quite similar the optics that the formed ITO layer of different manufactures is shown, electrology characteristic or its; Pertinent literature can be consulted this case applicant's No. 096111705 TaiWan, China patent application case, and quotes it and be the part of the application's case.At sweep electron microscope (Scanning ElectronMicroscope; SEM) under, the ITO particle 1601 that forms with the electron beam evaporation plating method does not fill up taper hole cave, six holes 1501 fully, and demonstrates the intergranular space of many ITO of being present in, and is as shown in Figure 2.These a little spaces possibly make light limited to wherein can't break away from light-emitting component, and is absorbed by ITO on every side gradually.The existing medium that has less than the ITO refraction coefficient also or in therefore a little spaces like air, makes the light that gets into ITO can meet with total reflection at the material boundary place and can't leave the ITO layer, and is absorbed by ITO gradually.
Equal to propose at Materials Science and Engineering B 2004 Christian eras by C.H.Kuo " Nitride-based near-ultraviolet LEDs with an ITO transparent contact " once studied in the literary composition to the transmissivity (transmittance) of ITO and the relation between wavelength.It finds that when wavelength was less than about 420nm, the ITO transmissivity had rapid downward trend, when 350nm even possibly be lower than 70%.For blue wave band, ITO has and is higher than 80% transmissivity, and is still, but desirable not to the utmost in the transmissivity of black light or ultraviolet light wave band.
By being, transparent oxides such as ITO are as semiconductor light-emitting elements material commonly used, show for the optics and the electricity of element and still have many spaces of improving.
Summary of the invention
A kind of opto-semiconductor device according to one embodiment of the invention comprises an energy conversion system, can carry out the conversion between luminous energy and electric energy, and wherein energy conversion system comprises one first contact zone and one second contact zone; One first material block is formed on first contact zone of energy conversion system, and penetrable for a specific wavelength of light; And one second material block, be formed on second contact zone of energy conversion system; Wherein, the resistance between the first material block and first contact zone is less than the resistance between the second material block and second contact zone.
The all preferred embodiments of other of above-mentioned opto-semiconductor device are following: first contact zone in the opto-semiconductor device comprises the tapered hole of a hexagonal.First contact zone in the opto-semiconductor device comprises that the one and first material block forms the surface of ohmic contact.The first material block in the opto-semiconductor device and the second material block form patterning configuration.Second contact zone in the opto-semiconductor device comprises an insulation material.
A kind of opto-semiconductor device according to another embodiment of the present invention comprises an energy conversion system, and in order to carry out the conversion between luminous energy and electric energy, this energy conversion system has one first side; One contact layer is formed at first side of energy conversion system, and comprises an external boundary and at least one ohmic contact regions, wherein can form ohmic contact between ohmic contact regions and energy conversion system; And two or a plurality of locus of discontinuity, integrate mutually with contact layer and form at least one pattern on energy conversion system.
The all preferred embodiments of other of above-mentioned optoelectronic semiconductor dress are following:
The locus of discontinuity of opto-semiconductor device comprise how much, material, physical characteristic, and chemical characteristic in one of which discontinuous at least.Perhaps, locus of discontinuity comprises a kind of structure, and it shows cognizable one repeated characteristic on arbitrary direction on a surface.The kenel of this repeated characteristic comprise fixed cycle, variable period, and paracycle (quasiperodicity) in one of which at least.Perhaps, locus of discontinuity comprises a kind of irregular surface structure.Perhaps, the size of locus of discontinuity is less than or equal to an electric current dispersion distance.
Contact layer in the opto-semiconductor device comprises tin indium oxide.
Ohmic contact regions in the opto-semiconductor device comprises at least one sinking space, and its geometry comprises pyramid, circular cone, cuts in the body one of which at least with tack.Perhaps, ohmic contact regions comprises an at least one inclined-plane and a plane, and wherein the inclined-plane can be good ohmic contact than the plane with energy conversion system formation.Perhaps, the inclined-plane can form ohmic contact with energy conversion system, and the plane can not form ohmic contact with energy conversion system.Perhaps, the inclined-plane can form ohmic contact with energy conversion system, and the plane can form non-ohmic contact or Schottky contacts with energy conversion system.
Has bigger contact area than ohmic contact regions in the opto-semiconductor device near external boundary.Perhaps, ohmic contact regions is formed on the outer surface of energy conversion system.
Do not have ohmic contact regions between the part at least of the locus of discontinuity in the opto-semiconductor device and energy conversion system.Perhaps, in the locus of discontinuity in the opto-semiconductor device at least one of which comprise a chymoplasm.
Energy conversion system in the opto-semiconductor device comprises a transition zone.Perhaps, opto-semiconductor device also comprises an electrical contact near energy conversion system, and electrically contacts with contact layer formation.
Description of drawings
Fig. 1 shows the light-emitting component of a kind of high-luminous-efficiency disclosed in this case applicant's the I237903 TaiWan, China patent;
Fig. 2 is reading scan formula electron microscope (Scanning Electron Microscope; SEM) under, with the photo of ITO particle in taper hole cave, six holes of electron beam evaporation plating method formation;
Fig. 3 is for showing the sketch map according to the opto-semiconductor device of one embodiment of the invention;
Fig. 4 is for showing the sketch map according to the opto-semiconductor device of one embodiment of the invention;
Fig. 5 (a)-(c) is the sketch map of demonstration according to the part-structure of the opto-semiconductor device of one embodiment of the invention;
Fig. 6 (a)-(c) is the sketch map of demonstration according to the part-structure of the opto-semiconductor device of one embodiment of the invention;
Fig. 7 (a)-(c) is the sketch map of demonstration according to the part-structure of the opto-semiconductor device of one embodiment of the invention;
Fig. 8 (a)-(c) is the sketch map of demonstration according to the part-structure of the opto-semiconductor device of one embodiment of the invention;
Fig. 9 (a) and (b) are the sketch map of demonstration according to the part-structure of the opto-semiconductor device of one embodiment of the invention;
Figure 10 (a)-(c) is the sketch map of demonstration according to the part-structure of the opto-semiconductor device of one embodiment of the invention;
Figure 11 (a) and (b) are the vertical view of demonstration according to the part-structure of the opto-semiconductor device of one embodiment of the invention;
Figure 12 (a) and (b) are the vertical view of demonstration according to the part-structure of the opto-semiconductor device of one embodiment of the invention;
Figure 13 is the vertical view of demonstration according to the contact layer of the opto-semiconductor device of one embodiment of the invention;
Figure 14 is the vertical view of demonstration according to the contact layer of the opto-semiconductor device of one embodiment of the invention; And
Figure 15 is the vertical view of demonstration according to the contact layer of the opto-semiconductor device of one embodiment of the invention.
Description of reference numerals
10 opto-semiconductor devices, 163 external boundaries
11 substrates, 164 openings
12 transition zones, 165 electric currents resistance barrier district
13 first electrical layer 17 second electrical contact
14 converter sections, 171 roots
15 second electrical layers of 172 branch
151 ohmic contact regions, 173 ends
152 insulation layers, 18 first electrical contacts
153 platforms, 100 light-emitting components
16 contact layers, 110 sapphire substrates
161 locus of discontinuities, 120 nitride resilient coatings
1611 locus of discontinuities, 130 n type nitride-based semiconductor laminations
1612 locus of discontinuities, 140 nitride multiple quantum trap luminescent layers
1613 locus of discontinuities, 150 p type nitride-based semiconductor laminations
1614 locus of discontinuities, 1501 hexagonal taper hole caves structure
1615 locus of discontinuities, 160 oxidic transparent conductive layers
1616 locus of discontinuities, 1601 ITO particles
162 chymoplasms
Embodiment
Below cooperate and illustrate embodiments of the invention.
Opto-semiconductor device 10 as shown in Figure 3 comprises a semiconductor system that is formed on the substrate 11.Semiconductor system comprises semiconductor element, device, product, the circuit that can carry out or bring out photoelectricity and can change or uses.Particularly, semiconductor system comprises light-emitting diode (Light-Emitting Diode; LED), laser diode (Laser Diode; LD), one of which at least in solar cell (Solar Cell), LCD (Liquid Crystal Display), the Organic Light Emitting Diode (Organic Light-EmittingDiode).All subsystems or unit are all processed with semi-conducting material in " semiconductor system " speech and unrestricted this system in this manual; Other non-semiconductor materials, for example: metal, oxide, insulator etc. all optionally are integrated among this semiconductor system.
In one embodiment of this invention, the minimum electrically layer 15 of one first electrical layer 13, one converter section 14 and one second that comprises of semiconductor system.First electrically layer 13 and 1 second electrically in the layer 15 each other at least two parts electrically, polarity or alloy is different, or (" multilayer " refers to two layers or more, and be as follows in order to single layer of material that electronics and hole are provided or multilayer respectively.) if first electrically layer 13 and 1 second electrically layer 15 constitute by partly leading conductor material, then its electrical selection can for p type, n type, and the i type in the combination of the two at least arbitrarily.Converter section 14 is at the first electrical layer 13 and second electrically between the layer 15, the zone that possibly change or brought out conversion for electric energy and luminous energy.Electric energy changes or brings out light able one such as light-emitting diode, LCD, Organic Light Emitting Diode; Luminous energy changes or brings out electric able one such as solar cell, photodiode.
With light-emitting diode, the luminous frequency spectrum of conversion back light can be adjusted through one or more layers physics or chemical configuration in the change semiconductor system.Material commonly used such as AlGaInP (AlGaInP) series, aluminum indium gallium nitride (AlGaInN) series, zinc oxide (ZnO) series etc.The structure of converter section 14 is like single heterojunction structure (single heterostructure; SH), double-heterostructure (doubleheterostructure; DH), bilateral double-heterostructure (double-side double heterostructure; DDH) or multi layer quantum well (multi-quantum well; MQW).Moreover the logarithm of adjustment SQW can also change emission wavelength.
More optionally comprise a transition zone 12 between substrate 11 and the semiconductor system.Transition zone 12 makes the material system of material system " transition " to the semiconductor system of substrate between two kinds of material systems.As far as light-emitting diode structure, on the one hand, transition zone 12 for example resilient coating (Buffer Layer) etc. in order to reduce by two kinds of unmatched material layers of storeroom lattice.On the other hand, transition zone 12 can also be in order to combining individual layer, multilayer or the structure of two kinds of materials or two isolating constructions, and its available material is like: organic material, inorganic material, metal, and semiconductor etc.; Its available structure like: reflector, heat-conducting layer, conductive layer, ohmic contact (ohmic contact) layer, anti-deformation layer, Stress Release (stressrelease) layer, stress adjustment (stress adjustment) layer, engage (bonding) layer, wavelength conversion layer, reach mechanical fixation structure etc.
Second electrically more optionally forms a contact layer 16 on the layer 15.Contact layer 16 is arranged at second electrical layer 15 side away from converter section 14.Particularly, contact layer 16 can be the two combination of optical layers, electrical layer or its.Optical layers can change electromagnetic radiation or the light that comes from or get into converter section 14.Refer to change at least a optical characteristics of electromagnetic radiation or light in this alleged " change ", afore-mentioned characteristics comprises but is not limited to frequency, wavelength, intensity, flux, efficient, colour temperature, color rendering (renderingindex), light field (light field), and angle of visibility (angle of view).Electrical layer can be so that numerical value, density, the distribution of one of which change or the trend that changes are arranged at least in the voltage between arbitrary group of opposite side of contact layer 16, resistance, electric current, electric capacity.The constituent material of contact layer 16 comprises oxide, conductive oxide, transparent oxide, have 50% or the oxide of above transmissivity, metal, relatively the printing opacity metal, have 50% or the semiconductor of the metal of above transmissivity, organic matter, inanimate matter, fluorescence, phosphorescence thing, pottery, semiconductor, doping, and undoped semiconductor in one of which at least.In some applications, the material of contact layer 16 be tin indium oxide, cadmium tin, antimony tin, indium zinc oxide, zinc oxide aluminum, with zinc-tin oxide in one of which at least.If relative printing opacity metal, its thickness is about 0.005 μ m～0.6 μ m, or 0.005 μ m～0.5 μ m; Or 0.005 μ m～0.4 μ m, or 0.005 μ m～0.3 μ m, or 0.005 μ m～0.2 μ m; Or 0.2 μ m～0.5 μ m, or 0.3 μ m～0.5 μ m, or 0.4 μ m～0.5 μ m; Or 0.2 μ m～0.4 μ m, or 0.2 μ m～0.3 μ m.
Second electrically can form ohmic contact regions 151 on the layer 15 in some cases.Second electrically layer 15 and contact layer 16 as if directly or indirectly contacting via ohmic contact regions 151; Possibly form ohmic contact therebetween, make perhaps in driving voltage (driving voltage), threshold voltage (threshold voltage) and the forward voltage (forward voltage) of opto-semiconductor device 10 that one of which descends at least.The possible kenel of ohmic contact regions 151 is depression or protruding.Depression is like 151 illustrations of ohmic contact regions of Fig. 3; Protruding 151 illustrations of ohmic contact regions like Fig. 4.The possible geometry of sinking space is that pyramid, circular cone, tack cut body, cylinder, cylinder, hemisphere, irregular body or its combination in any.Protruding possible geometry is that pyramid, circular cone, tack cut body, cylinder, cylinder, hemisphere, irregular body or its combination in any.In addition, ohmic contact regions 151 all is made up of single or approximate raised or sunken institute as as shown in the figure, also possibly not be made up of protruding combination with depression but get rid of it.In a specific embodiment, protruding, sinking space or its are combined as the hexagonal awl.Contact layer 16 forms ohmic contact with ohmic contact regions 151 contacted at least a portion.Specific lattice direction that the inclined-plane had on the pyramid or surperficial energy state are to cause ohmic contact or than one of possible cause of low level energy barrier.On the other hand; The part that does not form ohmic contact regions 151 on the second electrical layer, 15 surface may form relatively poor ohmic contact, non-ohmic contact or Schottky (Schottky) with 16 of contact layers and contact, yet 16 of this part and contact layers are not got rid of the possibility that the formation ohmic contact is arranged.Ohmic contact regions 151 possibly form background and some execution mode can be with reference to this case applicant's I237903 TaiWan, China patent, it also quotes the part into the application's case.
Except that continuous single or multiple lift, contact layer 16 can be for discontinuous or have a single or multiple lift of pattern.Related patent U.S. Patent No. can be consulted this case applicant's No. 096111705 TaiWan, China patent application case, and quotes it and be the part of the application's case." discontinuous " refer to how much, material, physical property, and chemical property in one of which discontinuous at least.How much discontinuous finger length, thickness, the degree of depth, width, cycle, external shape, and internal structure one of which discontinuous at least.The discontinuous finger density of material, composition, concentration, and manufacture one of which discontinuous at least.The discontinuous finger electricity of physical property, optics, heating power, and mechanical property in one of which discontinuous at least.The discontinuous finger alloy of chemical property, activity, acidity, and alkalescence in one of which discontinuous at least.Shown in Fig. 3 and Fig. 4, be formed with locus of discontinuity 161 on the contact layer 16.If material is discontinuous, material in the locus of discontinuity 161 maybe with second electrically layer 15, ohmic contact regions 151 or its two form ohmic contact.The optical property of locus of discontinuity 161 also maybe be different with contact layer 16.Optical property such as transmissivity, refractive index and reflectivity.The energy stream or the luminous intensity of leaving or getting into converter section 14 through selecting suitable locus of discontinuity 161 materials to improve.For example, locus of discontinuity 161 is an air gap, and the light that comes from converter section 14 can leave opto-semiconductor device 10 through air gap thus under not absorbed by contact layer 16.If first electrically layer 13, converter section 14, and second electrically layer 15 be formed with regular figure structure, irregular figure structure, textures, photonic crystal or its any combination on the one of which at least and also possibly improve energy stream or luminous intensity by locus of discontinuity 161 turnover.Like Fig. 3 and shown in Figure 4, if with locus of discontinuity 161 contacted second electrically the material of layer 15 have bigger refractive index, ohmic contact regions 151 possibly destroy light improves locus of discontinuity 161 in the total reflection at this refractive index interface place light extraction.
If opto-semiconductor device 10 is like Fig. 3 or structure shown in Figure 4, on the second electrical layer 15 or contact layer 16, optionally form one second electrical contact 17, electrically can optionally form one first electrical contact 18 on the layer 13 first.Electrical contact is the structure of single or multiple lift, and is the interface that opto-semiconductor device 10 and outside line are electrical connected.Electrical contact can link to each other with outside line through wiring (wiring), or directly is bonded on the outside line.
In addition, electrical contact also can be arranged at other sides of opto-semiconductor device 10.For example, first electrical contact 18 can be arranged at first electrically under layer 13, transition zone 12 or the substrate 11, or is arranged at the first electrical layer, transition zone 12, reaches in the substrate 11 side of one of which at least.In other words, first electrical contact 18 lay respectively at against each other with second electrical contact 17 or vertical surface on.In another embodiment, second electrical contact 17 can be arranged at the side of the second electrical layer.In an embodiment again, first electrical contact 17, second electrical contact 18 or its two can be through perforation, insulating material or its two be arranged at the first electrically side or the surface of layer, transition zone 12 or substrate 11.
Below introduce several embodiment of electrical contact, ohmic contact regions and locus of discontinuity.Though in the diagram with second electrically layer 15 and second electrical contact 17 be example, do not get rid of following examples and can also be applicable to first electrical layer 13 and first electrical contact 18, or the opto-semiconductor device of other kinds.
As shown in Figure 5, contact layer 16 is formed at second electrically on the layer 15, and second electrical contact 17 is formed on the contact layer 16, locus of discontinuity 161 be distributed in second electrical contact 17 around.Its distribution mode is when so that the electric current that comes from electrical contact 17 outer rim of lateral flow to contact layer 16 as much as possible, or makes the intermarginal current density difference percentages of electrical contact 17 belows and contact layer 16 less than 60%, 50%, 40%, 30%, 20% or 10% outward.For example, the current density of electrical contact below is xA/cm
2, the current density of contact layer 16 outer rims is yA/cm
2, its current density difference percentage does | x-y|/(the greater among x and the y) %.
Fig. 5 (a) discloses the kenel of two kinds of locus of discontinuities 161, and these two kinds of kenels can and be deposited or existed alone.The contact layer 16 on second electrical contact, 17 right sides is not overlapping with locus of discontinuity 161; 16 of the contact layers in second electrical contact, 17 left sides are overlapping with locus of discontinuity 161, and contact layer 16 with second electrically layers 15 have the third material or structure.Particularly, locus of discontinuity 161 or the third material or structure are for example insulation such as air, oxide material, or are poor conductor with respect to contact layer, or Bragg mirror (Bragg reflector), with antireflection (anti-reflection) layer.In addition, the refraction coefficient of the third material can be between the second electrical layer 15 and contact layer 16.The contact layer 16 of second electrical contact, 17 belows, second electrically layer 15, converter section 14, first electrically layer 13, transition zone 12, and substrate 11 at least one of which more can optionally form insulation layer 152 so that come from the electric current of second electrical contact 17 and outwards disperse.Yet the position of insulation layer 152 is merely illustration in the diagram, and is non-in order to limit execution mode of the present invention.The two approximates or is slightly larger than the size of second electrical contact 17 contact layer 16 of second electrical contact, 17 belows, insulation layer 152 or its; Wherein, the minimum virtual diameter of a circle that contact layer 16 sizes of second electrical contact, 17 belows refer to be positioned at around second electrical contact 17 or below locus of discontinuity 161 is surrounded.Shown in Fig. 5 (b), second electrical contact 17 is imbedded among the contact layer 16.Shown in Fig. 5 (c); Second electrical contact 17 is imbedded among the contact layer 16, and form the regular surfaces structure on electrical contact 17 and the contact layer 16 contacted arbitrary surfaces, irregular surface structure or its two to increase the contact area of 16 of electrical contact 17 and contact layers.For example, the contact-making surface 171 of 16 of electrical contact 17 and contact layers forms matsurface to increase contact area to each other.Bigger contact area maybe can increase the structure steadiness of electrical contact 17, maybe can allow more electric current to pass through.
Fig. 6 (a)～Fig. 6 (c) discloses the configuration kenel of another kind of electrical contact, and wherein the configuration of locus of discontinuity 161 or execution mode please refer to the related description of Fig. 5.Second electrical contact 17 directly is formed on the second electrical layer 15, in other words, does not have contact layer 16 at the electrical contact 17 and second 15 on the electrical layer.Electrical contact 17 and contact layer 16, second electrically form on layer 15 or its two contacted arbitrary surface regular surfaces structure, irregular surface structure or its two to increase the contact area between electrical contact 17 and other parts.Bigger contact area maybe can increase the structure steadiness of electrical contact 17, maybe can allow more electric current to pass through.Second electrical contact, 17 belows more can form insulation layer 152.Insulation layer 152 approximates or is slightly larger than the size of second electrical contact 17.
Fig. 7 discloses the opto-semiconductor device according to another kind of embodiment of the present invention.In the present embodiment, comprise chymoplasm 162 in the locus of discontinuity 161 to fill the segment space at least in one or more ohmic contact regions 151.The pattern that distributes through chymoplasm 162 in the adjustment ohmic contact regions 151 can change the optical characteristics that comes from or get into electromagnetic radiation or the light of converter section 14, electrology characteristic or its two.In the semiconductor of chymoplasm 162 as insulation material, metal, semiconductor, doping, the Wavelength conversion substance at least one.Insulation material such as oxide, inert gas, air etc.Wavelength conversion substance such as fluorophor, phosphor, dyestuff, semiconductor etc.The refractive index of chymoplasm 162 can also be between it up and down between the material.If chymoplasm 162 particles, its size should with can insert ohmic contact regions 151 or less than the width of ohmic contact regions 151, the degree of depth or its two for good.Among Fig. 7 (a), all insert chymoplasm 162 in the ohmic contact regions 151 that joins with the contact layer 16 of electrical contact 17 belows.Among Fig. 7 (b), also insert chymoplasm 162 in the part ohmic contact regions 151 that joins with the contact layer 16 of electrical contact 17 belows, so do not have chymoplasm 162 in the ohmic contact regions 151 of other parts and exist.As shown in the figure, the outer rim of contact layer 16 extends among the ohmic contact regions 151.Among Fig. 7 (c), comprise the material identical in the locus of discontinuity 161 (dotted line place), but also comprise chymoplasm 162 with contact layer 16.
As shown in Figure 8, at least a portion of electrical contact 17 is imbedded among the second electrical layer 15.In Fig. 8 (a), the alternative formation in locus of discontinuity 161 belows ohmic contact regions 151, regular surfaces structure (not shown), irregular surface structure (not shown) or its combination.In Fig. 8 (b), there is not ohmic contact regions 151 in locus of discontinuity 161 belows.If ohmic contact regions 151 is formed on the second electrical layer 15 through epitaxial growth method, can in the ohmic contact regions in the locus of discontinuity 161 151, insert chymoplasm 162 so that its planarization.If ohmic contact regions 151 is formed on the second electrical layer 15 through wet etch method, dry ecthing method or its two mixer, can uses etching mask to cover and estimate that the part that forms locus of discontinuity 161 is etched to avoid the second electrical layer, 15 surface.In Fig. 8 (c) figure, electrical contact 17 and contact layer 16, second electrically form on layer 15 or its two contacted arbitrary surface regular surfaces structure, irregular surface structure or its two with the contact area between increase electrical contact 17 and other parts.
As shown in Figure 9, at least a portion of electrical contact 17 is imbedded among the second electrical layer 15, and also there is not ohmic contact regions 151 in locus of discontinuity 161 belows.In one embodiment, contact layer 16 is covered in earlier and is formed with second electrically behind the upper surface of layer 15 of ohmic contact regions 151, and the ohmic contact regions 151 of subregion in those zones that removes contact layer 16 according to predetermined pattern more almost is removed.So, form locus of discontinuity 161 and remove ohmic contact regions 151 and be incorporated into among a series of processing steps.In another embodiment, shown in Fig. 9 (b), can the formation rule surface texture on arbitrary inner surface of locus of discontinuity 161, the two combination of irregular surface structure or its.Electrical contact 17 and contact layer 16, second electrically form on layer 15 or its two contacted arbitrary surface regular surfaces structure, irregular surface structure or its two to increase the contact area between electrical contact 17 and other parts.
Shown in figure 10, ohmic contact regions 151 is formed on the second electrical layer 15 with different size, and the kenel of ohmic contact regions 151 can be with reference to aforesaid explanation.Under particular condition, the conditional decision contact layer 16 of the inner surface of ohmic contact regions 151 or outer surface and second is the quality and quantity of 15 ohmic contact of layer electrically.For example, in a big way surface can provide more area to form ohmic contact.Among Figure 10 (a), the width of ohmic contact regions 151 and the degree of depth are outwards enlarged by electrical contact 17 gradually.Among Figure 10 (b), insert chymoplasm 162 in the ohmic contact regions 151 of electrical contact 17 times and specific location, the relevant item of chymoplasm 162 can be consulted aforesaid explanation and diagram.Among Figure 10 (c), electrical contact 17 belows do not form ohmic contact regions 151.At this, " size " comprise but be not limited to length, width, the degree of depth, highly, thickness, radius, angle, curvature, spacing, area, volume.
More than diagram is merely the signal of each embodiment, non-formation position, quantity or kenel in order to the limiting surface structure." regular surfaces structure " refers to a kind of structure, and it can pick out repeated characteristic on arbitrary direction on a surface, and the kenel of this repeated characteristic can be fixed cycle, variable period, paracycle (quasiperodicity) or its combination." irregular surface structure " refers to a kind of structure, and it can't pick out repeated characteristic on arbitrary direction on a surface, this structure or can be described as " random rough surfaces ".
Figure 11 and Figure 12 show the vertical view of opto-semiconductor device subregion.In Figure 11, the pattern of locus of discontinuity 161 is circular, and configurable conventional arrays like Figure 11 (a), or staggered like Figure 11 (b).Symbol P1 representes circular spacing, and symbol D1 representes round diameter.In Figure 12, the pattern of locus of discontinuity 161 is a square, and configurable conventional arrays like Figure 12 (a), or staggered like Figure 12 (b).Symbol P2 representes foursquare spacing, and symbol D2 representes the foursquare length of side.Yet the shape of locus of discontinuity 161 is not limited to this, and other can also be adopted by the present invention like rectangle, rhombus, parallelogram, ellipse, triangle, pentagon, hexagon, trapezoidal or irregular shape.
Table 1 is that the remittance of several experimental results is whole.45mil * 45mil blue light naked core that experiment adopts the first photoelectricity of TaiWan, China crystalline substance company to be produced; The opto-semiconductor device 10 of its structure proximate Fig. 3; On it and reprocessing forms as Figure 11 (a), Figure 11 (b), with locus of discontinuity and the contact layer of Figure 12 (a), promptly circular conventional arrays, circular staggered, and square conventional arrays.The material of contact layer 16 is the tin indium oxide of electron beam evaporation plating, and its particle size is about 50nm～80nm, and refractive index is about 2.D1, D2, P1, and the unit of P2 be μ m.Vf is a forward voltage.Area is than the percentage for the gross area of locus of discontinuity and contact layer area.As shown in table 1, we obtain the brightness increase and reduce Vf when being found to be, and the area of locus of discontinuity must suitably be controlled.In addition, the density of locus of discontinuity in contact layer also is a Control Parameter.By people such as X.Guo in Applied Physics Letters, Vol.78, No.21 once provided the method for electric current dispersion distance (Ls) between two electrodes that calculate light-emitting diode in the paper of p.3337 being put forward, the document is also quoted the part into the application's case.As hypothesis, the size of locus of discontinuity is if fall within the yardstick of electric current dispersion distance with the estimation of above-mentioned document, and electric current can be crossed over through second electrical areas of flowing through and flow into behind the locus of discontinuity among the contact layer again.Thus, electric current can transmit larger distance in contact layer.
Table 1
Among in addition several embodiment of the present invention, the vertical view of contact layer 16 is as respectively like Figure 13～shown in Figure 15.Label 153 expressions one platform.Pattern, quantity, ratio among right each figure are merely illustration, and non-in order to limit execution mode of the present invention, other all can reasonably be applied among the present invention according to criterion as herein described, principle, principle, guide or other teachings.
In Figure 13, second electrical contact 17 comprises root 171, branch 172, reaches end 173, and it constitutes an electric current networking jointly, and the guiding electric current is towards predetermined direction.Root 171 is branch 172 and the 173 apparent places that rise, end, and is generally the significant point on the external form, can be used as the datum mark in technology or the testing process, also often as being connected part with external circuit.End 173 is the networking end portion, and other branches are not promptly arranged again.Branch 172 is between root 171 and end 173.Wantonly two ones are electrical connected each other, perhaps optionally are connected with each other on the entity.For example; Can be electrical connected each other through outer lead, contact layer 16, locus of discontinuity 161, intermediate materials or below district between wantonly two ones; Wherein, " intermediate materials " finger-type is formed in the material in adjacent two gaps, this intermediate materials or by forming with at least one different material, or be formed among other processing steps; Below district refers to be arranged in three arbitrary subordinates can be with electrical layer or the electrical areas as current channel, for example second electrically layer 15 or the high-doped zone.
In one embodiment, second electrical contact 17 can only comprise root 171 and end 173.In other embodiments, each root 171, branch 172, and end 173 can use identical or different mode to be connected with material below, connected mode can be with reference to aforementioned at embodiment and illustrated description.In addition, each subordinate can optionally form electric current resistance barrier (current blocking) district, causing the electric current obstacle that flows of material downwards, or the form that flows towards the below of adjustment electric current.Electric current resistance barrier district through in the square one-tenth insulation of target subordinate or bad electric conducting material to reach above-mentioned effect.In the diagram, root 171, branch 172, and quantity, the shape of end 173, be merely illustration with layout, non-in order to restriction the present invention.For example, second electrical contact 17 can comprise two or a plurality of root 171,171 of roots are alternative form branch 172, end 173 or its two.Root 171 is outer can be around two or a plurality of branch 172 or end 173.Can divide expenditure two or a plurality of end 173 in the branch 172.
Locus of discontinuity 161 inwardly forms from the external boundary 163 of contact layer 16, and these a little locus of discontinuities 161 do not pass through contact layer 16, that is each locus of discontinuity 161 only has an opening 164 on external boundary 163.And two or a plurality of locus of discontinuity 161 can a shared opening 164, shown in dashed region.By the vertical view sight, locus of discontinuity 161 can intersect (not shown)s or non-intersect with second electrical contact 17.When being made up of insulation or bad electric conducting material with second electrical contact, 17 crossing locus of discontinuities 161, this locus of discontinuity 161 that intersects can be distinguished 165 with aforesaid electric current resistance barrier and integrate mutually, shown in Figure 14 oblique line (hatch).The position and the size in electric current resistance barrier district 165 are merely illustration in the diagram, and be non-in order to limit enforcement of the present invention.
In one embodiment, on the external boundary 163 arbitrarily or in the part scope continuously the angle of at least three locus of discontinuities 161, length, width, the degree of depth, with spacing at least one key element inequality.Shown in figure 13, locus of discontinuity 1611,1612, have identical angle, length and width with 1613, but its spacing and inequality, in other words, under the situation of not considering the degree of depth, the irregular variation that the configuration of locus of discontinuity 161 presents a dimension in this district.This irregular variation comprises part or all irregular variations, for example, and the irregular variation zone between two regular variation zone." rule changes " refers to that geometric ratio changes or equal difference changes.And for example locus of discontinuity 1614,1615, have different angles, length, width and spacing with 1616.
In Figure 13 and Figure 14, second electrical contact, 17 left-right symmetric (bilateral symmetry).Among Figure 15, second electrical contact 17 asymmetric (asymmetry).First electrical contact, 18 left-right symmetric among Figure 13～Figure 15, but be not limited to this, in other words, first electrical contact 18 also can be asymmetric.In one embodiment, the overall variation tendency of locus of discontinuity meets the external form of second electrical contact 17, can not depart from this variation tendency but do not get rid of minority locus of discontinuity 161.As in two longer locus of discontinuities 161 of root 171 or end 173 still between or the length shorter one arranged.In another embodiment; At least the interval of 17 of the part locus of discontinuity 161 and second electrical contacts is maintained in definite value or the stable region approximately; For example; The spacing of 172 in each locus of discontinuity 161 and branch that is arranged in branch 172 both sides is promptly roughly the same, that is the size of spacing falls within the reasonable technology margin of tolerance.
Though more than each diagram only distinguish corresponding specific embodiment with explaining; Yet; Illustrated or the element that discloses among each embodiment, execution mode, design criterion, and know-why remove and showing mutually conflict, contradiction each other or be difficult to the common implementing, those skilled in the art is when complying with its required any reference, exchange, collocation, coordination or merging.
Though the present invention has explained that as above so it is not the material and technology method in order to limit scope of the present invention, enforcement order or to use.For various modifications and the change that the present invention did, neither spirit of the present invention and the scope of taking off.
Claims (20)
1. opto-semiconductor device comprises:
One energy conversion system can carry out the conversion between luminous energy and electric energy, and wherein this energy conversion system comprises a surface, one first contact zone and a plurality of second contact zone, and wherein this first contact zone and these a plurality of second contact zones are formed at this surface;
One first material block is formed on this first contact zone of this energy conversion system, and penetrable for a specific wavelength of light; And
A plurality of second material blocks are formed on these a plurality of second contact zones of this energy conversion system;
Wherein, the resistance between this first material block and this first contact zone is less than the resistance between this second material block and this second contact zone.
2. opto-semiconductor device as claimed in claim 1, wherein this first contact zone comprises the tapered hole of a hexagonal.
3. opto-semiconductor device as claimed in claim 1, wherein this first contact zone comprises one and forms the surface of ohmic contact with this first material block.
4. opto-semiconductor device as claimed in claim 1, wherein this first material block and this second material block form patterning configuration.
5. opto-semiconductor device as claimed in claim 1, wherein this second contact zone comprises an insulation material.
6. opto-semiconductor device comprises:
One energy conversion system, in order to carry out the conversion between luminous energy and electric energy, this energy conversion system has one first side;
One electrical contact is arranged on this first side of said energy conversion system;
One contact layer is formed at this first side of this energy conversion system, and comprises an external boundary and at least one ohmic contact regions, wherein can form ohmic contact between this ohmic contact regions and this energy conversion system; And
Two or more locus of discontinuities, become a pattern distribution, make edge outside electric current lateral flow to the contact layer that comes from this electrical contact.
7. opto-semiconductor device as claimed in claim 6, wherein this locus of discontinuity comprise how much, material, physical characteristic, and chemical characteristic in one of which discontinuous at least.
8. opto-semiconductor device as claimed in claim 6, wherein this locus of discontinuity comprises a kind of structure, and it shows cognizable one repeated characteristic on arbitrary direction on a surface.
9. opto-semiconductor device as claimed in claim 8, kenel that wherein should the repeatability characteristic comprise fixed cycle, variable period, and paracycle in one of which at least.
10. opto-semiconductor device as claimed in claim 6, wherein this locus of discontinuity comprises a kind of irregular surface structure.
11. opto-semiconductor device as claimed in claim 6, wherein the size of this locus of discontinuity is less than or equal to an electric current dispersion distance.
12. opto-semiconductor device as claimed in claim 6, wherein this contact layer comprises tin indium oxide.
13. opto-semiconductor device as claimed in claim 6, wherein this ohmic contact regions comprises at least one sinking space, and its geometry comprises pyramid, circular cone, cuts in the body one of which at least with tack.
14. opto-semiconductor device as claimed in claim 6, wherein this ohmic contact regions comprises an at least one inclined-plane and a plane, and wherein this inclined-plane can be good ohmic contact than this plane with this energy conversion system formation.
15. opto-semiconductor device as claimed in claim 6 wherein has bigger contact area than this ohmic contact regions near this external boundary.
16. opto-semiconductor device as claimed in claim 6, wherein this ohmic contact regions is formed on the outer surface of this energy conversion system.
17. opto-semiconductor device as claimed in claim 6 does not wherein have this ohmic contact regions between the part at least of this locus of discontinuity and this energy conversion system.
18. opto-semiconductor device as claimed in claim 6, wherein in this locus of discontinuity at least one of which comprise a chymoplasm.
19. opto-semiconductor device as claimed in claim 6, wherein this energy conversion system comprises a transition zone.
20. opto-semiconductor device as claimed in claim 6 also comprises:
One electrical contact near this energy conversion system, and forms with this contact layer and to electrically contact.
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| US10490598B2 (en) | 2010-09-13 | 2019-11-26 | Epistar Corporation | Light-emitting structure having a plurality of light-emitting structure units |
| KR101650518B1 (en) | 2010-09-13 | 2016-08-23 | 에피스타 코포레이션 | Light-emitting structure |
| KR101142965B1 (en) * | 2010-09-24 | 2012-05-08 | 서울반도체 주식회사 | Wafer-level light emitting diode package and method of fabricating the same |
| CN106129203A (en) * | 2016-08-26 | 2016-11-16 | 广东德力光电有限公司 | A kind of ultraviolet LED flip-chip |
| CN108063365B (en) * | 2017-12-12 | 2020-11-13 | 中国科学院半导体研究所 | Preparation method of electric pumping perovskite quantum dot laser |
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