CN2760762Y - Gallium nitride LED structure - Google Patents
Gallium nitride LED structure Download PDFInfo
- Publication number
- CN2760762Y CN2760762Y CNU2004200364438U CN200420036443U CN2760762Y CN 2760762 Y CN2760762 Y CN 2760762Y CN U2004200364438 U CNU2004200364438 U CN U2004200364438U CN 200420036443 U CN200420036443 U CN 200420036443U CN 2760762 Y CN2760762 Y CN 2760762Y
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- gallium nitride
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- type gallium
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 61
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 133
- 238000007788 roughening Methods 0.000 claims description 20
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 13
- 238000007639 printing Methods 0.000 claims description 10
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 239000002344 surface layer Substances 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 abstract description 13
- 238000000605 extraction Methods 0.000 abstract description 5
- 238000007254 oxidation reaction Methods 0.000 abstract 4
- 231100000289 photo-effect Toxicity 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 7
- 238000000576 coating method Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000009940 knitting Methods 0.000 description 2
- 229910001947 lithium oxide Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- -1 spinelle Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The utility model relates to a gallium nitride system light emitting diode (LED) structure which comprises a substrate, a semiconductor stack layer which is connect to the upward side of the substrate, the semiconductor stack layer comprises an n type gallium nitride system layer, a light emitting layer and a p type gallium nitride system layer from bottom to top. A rough layer is positioned on the p type gallium nitride system layer, and an electric light transmission oxidization layer is positioned on the rough layer and forms ohmic contact with the rough layer. A first electrode is electrically coupled with the n type gallium nitride system layer in the semiconductor stack layer, and a second electrode is electrically coupled with the electric light transmission oxidization layer. The electric light transmission oxidization layer is formed on a gallium nitride contact layer which is provided with a rough layer, the gallium nitride contact layer can be used as a window layer, the rough layer can be used as an ohmic contact layer of the electric light transmission oxidization layer and contact resistance and working voltage can be efficiently reduced. Simultaneously, a photoeffect can be interrupted by the rough layer, the light extraction efficiency can be enhanced and the external quantum efficiency can be improved.
Description
Technical field
The utility model relates to a kind of LED structure with gallium nitride system, particularly a kind of LED structure with gallium nitride system with preferable ohmic contact layer.
Background technology
The traditional structure of GaN series LED device as shown in Figure 1, this tradition light emitting diode construction 10 comprises a substrate 11, a gallium nitride resilient coating 12, a n type gallium nitride layer 13, an InGaN luminescent layer 14, a p type gallium nitride layer 15, a p type gallium nitride contact layer 16 (12 to 16 tunic is referred to herein as epitaxial structure) and a transparency conducting layer (transparent conductive layer) 17; In addition, a p type metal electrode 18 is positioned on this transparency conducting layer 17, and a n type metal electrode 19 then is positioned on this n type gallium nitride layer 13.
Known to known technology, the conductibility of p type gallium nitride ohmic contact layer 16 is quite low, and electric current is limited under this P type metal electrode 18 easily.So, for electric current being disperseed effectively reaching uniformly light-emitting, must be made in a transparency conducting layer 17 on this p type gallium nitride ohmic contact layer 16 earlier and be covered with whole light-emitting zone, and in order to improve light transmission, this transparency conducting layer 17 must be quite thin.Wherein, the used transparency conducting layer of tradition can be by being formed as nickel/gold, but extraction (lightextracting) efficient in order to increase light can form roughened textures in LED surface.At this moment, if use thin nickel/gold to be transparency conducting layer, its electric current deflection dispersion effect is inhomogeneous, has local luminous phenomenon to produce and cause the rising (combination of the nickel shown in Fig. 4 A and Fig. 4 B/golden light transmission conductive layer and rough surface and I-V curve) of operating voltage especially easily.
Known tin indium oxide (Indium Tin Oxide) abbreviates ITO as, not only be a kind of energy gap (Energybandgap) between 2.9～3.8 electron-volts high gap material, at visible-range, its penetrance can reach more than 95%, and it is a kind of material of n type high conductivity of high conductance, the refraction coefficient of this tin indium oxide (ITO) is between 1.7～2.2, according to Si Nieer theorem (Snell ' s law) and antireflection principle, encapsulate the distribution of refraction coefficient (n=1.5) of the resin cover closing material of usefulness owing to the refraction coefficient (n=2.4) of nitride multilayer gallium epitaxial structure, if can add the intermediate medium of refraction coefficient n～1.9, after encapsulation, then can reduce extraction (light extracting) efficient of reflection of light and then increase light, so the material utmost point is suitable as the Window layer of light-emitting diode.
In recent years, be suggested with the technology of tin indium oxide (ITO) though have as transparency conducting layer, as Taiwan patent announcement number 461126 described indium gallium nitride LEDs, as shown in Figure 2, this diode structure 20 has a substrate 21, a gallium nitride resilient coating 22, a n type gallium nitride layer 23, an InGaN active layer 24, a p type gallium nitride layer 25, a p type contact layer 26, an oxidic, transparent, conductive layers 27, a p type electrode 28 and a n type electrode 29; Wherein, though oxidic, transparent, conductive layers 27 is for being suitable for the tin indium oxide of light outgoing, yet in this diode structure, if gallium polarization (Ga-polarization) face that the p type contact layer of its below surface is more smooth, then be difficult for forming good Ohmic contact with tin indium oxide, so between the two contact impedance height and ohmic contact characteristic are not good, so the operating voltage of light-emitting diode also is difficult to descend.
The shortcoming not good in view of above-mentioned ohmic contact characteristic and operating voltage is high, a kind of structure that improves the ohmic contact characteristic of indium tin oxide layer and the gallium nitride based interlayer of p type has necessity of proposition.
Summary of the invention
The utility model is the LED structure with gallium nitride system of the preferable ohmic contact layer of a kind of tool, main purpose wherein has on the gallium nitride contact layer of surface roughening layer (textured layer) for the printing opacity conductive oxide layer is formed at one, and with this roughening layer as with the ohmic contact layer of this printing opacity conductive oxide layer, this light emitting diode construction includes: a substrate; Be connected to the semiconductor stack layer of the top of this substrate, from bottom to top comprise a n type gallium nitride series layer, a luminescent layer, a p type gallium nitride series layer; One roughening layer is positioned at the top of this p type gallium nitride series layer; Be positioned at a conduction printing opacity oxide layer of this roughening layer top, and form ohmic contact with this roughening layer; One first electrode is with the n type gallium nitride series layer electrical couplings in this semiconductor stack layer; And one second electrode, with this conduction printing opacity oxide layer electrical couplings.
According to above-mentioned conception, this roughening layer can be the n type, the p type mixes or the gallium nitride series layer of codope type.
According to above-mentioned conception, this light transmitting conductive oxide layer can be an indium oxide, tin oxide or tin indium oxide.
According to above-mentioned conception, this luminescent layer is one to contain the gallium nitride series layer that indium is formed.
According to above-mentioned conception, this roughening layer is a nitrogen polarized meter surface layer.
Whereby, can reduce contact impedance and operating voltage effectively, interrupt photoconductive effect with this roughening layer simultaneously, increase light extraction efficiency, and then improve external quantum efficiency.
Description of drawings
Fig. 1 is a common technology LED structure with gallium nitride system schematic diagram;
Fig. 2 is a common technology indium gallium nitride LED structural representation;
Fig. 3 is a LED structure with gallium nitride system schematic diagram of the present invention;
Fig. 4 A is depicted as the local luminous figure of combination results of nickel in the common technology/golden light transmission conductive layer and rough surface;
Fig. 4 B is depicted as the combined I-V curve chart of nickel in the common technology/golden light transmission conductive layer and rough surface;
Fig. 5 A is depicted as among the present invention the combination of tin indium oxide light transmission conductive layer and rough surface does not have local luminous figure;
Fig. 5 B is depicted as the combined I-V curve chart of tin indium oxide light transmission conductive layer and rough surface among the present invention.
Wherein, description of reference numerals is as follows:
10 light emitting diode constructions, 11 substrates
12 gallium nitride resilient coatings, 13 n type gallium nitride layers
14 indium nitride luminescent layers, 15 p type gallium nitride layers
16 p type gallium nitride contact layers, 17 transparency conducting layers
18 p type metal electrodes, 19 n type metal electrodes
20 diode structures, 21 substrates
Layer is transferred in the 23 n type nitrogenize of 22 gallium nitride resilient coatings
24 InGaN active layers, 25 p type gallium nitride layers
26 p type contact layers, 27 oxidic, transparent, conductive layers
28 p type electrodes, 29 n type electrodes
30 light-emitting diodes, 31 substrates
31 ' resilient coating, 32 n type gallium nitride series layer
33 luminescent layers, 34 p type gallium nitride series layer
35 p type contact layers, 36 roughening layers
37 Window layer, 38 first electrodes
39 second electrodes
Embodiment
See also Fig. 3, it is of the present utility model one preferable LED structure with gallium nitride system embodiment.As shown in the figure, GaN series LED 30 structures of the present utility model are a substrate 31, a n type gallium nitride series layer 32, a luminescent layer 33, a p type gallium nitride series layer 34, a p type contact layer 35, a roughening layer (textured layer) 36, one Window layer 37, first electrode 38 and second electrode 39, and wherein substrate 31 tops also can comprise a resilient coating 31 '.
Wherein the structure that discloses of the present invention is as a semiconductor stack layer that is connected to these substrate 31 tops, comprise from bottom to top n type gallium nitride series layer 32, luminescent layer 33, p type gallium nitride series layer 34 etc., this roughening layer 36 is positioned at the top of p type gallium nitride series layer 34 and p type contact layer 35 in addition.And as Window layer (window layer) 37 for being positioned at the conduction printing opacity oxide layer of these roughening layer 36 tops, form ohmic contact with this roughening layer.This first electrode 38 is set, the n type gallium nitride series layer electrical couplings in itself and this semiconductor stack layer, second electrode 39 then with this conduction printing opacity oxide layer electrical couplings.
This substrate 31 can be a sapphire, gallium oxide, lithia gallium, lithia aluminium, spinelle, carborundum, GaAs or silicon substrate.This n type gallium nitride series layer 32 is gallium nitride, aluminum indium nitride gallium or the gallium indium nitride layer that a n type mixes.This p type gallium nitride series layer 34 is gallium nitride, aluminum indium nitride gallium or the gallium indium nitride layer that a p type mixes.This luminescent layer 33 is one to contain the nitride compound semiconductor of indium.This Window layer 37 is a conduction printing opacity oxide layer, can be an indium oxide, tin oxide or tin indium oxide.
The existence of this roughening layer (textured layer) 36 that is provided with between p type contact layer 35 and Window layer 37 is except extraction (light extracting) efficient that can increase light and big and interrupt the photoconductive effect because of matsurface light exit dose, its surface state (surface state) can painstakingly be controlled to nitrogen polarization surface in the epitaxial growth process, it has been described in the Taiwan patent application case 92136888, reduce the contact resistance of 34 on Window layer 37 and this second conductive type nitride gallium system layer whereby and become an excellent ohmic contact layer, and reduce the operating voltage (shown in Fig. 5 A and Fig. 5 B tin indium oxide light transmission conductive layer and knit the combination and the I-V curve on shape surface) of this diode.
With respect to inhomogeneous in the known technology shown in Fig. 4 A because of its electric current deflection dispersion effect, cause nickel/golden light transmission conductive layer and electric current around combination results second electrode of knitting the shape surface to scatter uneven local luminous 40 phenomenons, the utility model is shown in Fig. 5 A, use printing opacity conductive oxide layer replaces nickel/golden light transmission conductive layer and makes up with knitting the shape surface, does not produce local luminous phenomenon around its second electrode.In addition, this roughening layer 36 also can be the n type, the p type mixes or the gallium nitride series layer of codope type.
The above embodiment only is preferred embodiment of the present utility model, and those of ordinary skill in the art can derive out various different embodiment after the explanation of reading the foregoing description, but these embodiment all belong in the scope of the present utility model.
Claims (5)
1. LED structure with gallium nitride system is characterized in that comprising:
One substrate;
The semiconductor stack layer is connected to the top of this substrate, from bottom to top comprises a n type gallium nitride series layer, a luminescent layer, a p type gallium nitride series layer;
One roughening layer is positioned at the top of this p type gallium nitride series layer;
One conduction printing opacity oxide layer is positioned at this roughening layer top, and forms ohmic contact with this roughening layer;
One first electrode is with the n type gallium nitride series layer electrical couplings in this semiconductor stack layer; And
One second electrode is with this conduction printing opacity oxide layer electrical couplings.
2. GaN series LED as claimed in claim 1 is characterized in that this roughening layer can be the n type, the p type mixes or the gallium nitride series layer of codope type.
3. GaN series LED as claimed in claim 1 is characterized in that this light transmitting conductive oxide layer can be an indium oxide, tin oxide or tin indium oxide.
4. GaN series LED as claimed in claim 1 is characterized in that this luminescent layer is one to contain the gallium nitride series layer of indium.
5. as claim 1 a described GaN series LED, it is characterized in that this roughening layer is a nitrogen polarized meter surface layer.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2004200364438U CN2760762Y (en) | 2004-04-08 | 2004-04-08 | Gallium nitride LED structure |
| DE200420012665 DE202004012665U1 (en) | 2004-04-08 | 2004-08-12 | Light-emitting diode arrangement based on a gallium nitride semiconductor compound |
| GB0419630A GB2413008B8 (en) | 2004-04-08 | 2004-09-03 | GaN-based light-emitting diode structure |
| FR0452048A FR2868878B3 (en) | 2004-04-08 | 2004-09-14 | GaN-BASED LIGHT-EMITTING DIODE STRUCTURE |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2004200364438U CN2760762Y (en) | 2004-04-08 | 2004-04-08 | Gallium nitride LED structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2760762Y true CN2760762Y (en) | 2006-02-22 |
Family
ID=34171197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2004200364438U Expired - Lifetime CN2760762Y (en) | 2004-04-08 | 2004-04-08 | Gallium nitride LED structure |
Country Status (4)
| Country | Link |
|---|---|
| CN (1) | CN2760762Y (en) |
| DE (1) | DE202004012665U1 (en) |
| FR (1) | FR2868878B3 (en) |
| GB (1) | GB2413008B8 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102117871A (en) * | 2009-12-31 | 2011-07-06 | 华新丽华股份有限公司 | Method for gaining electric injection efficiency and light extraction efficiency of luminescent device |
| CN101232068B (en) * | 2007-01-25 | 2011-10-19 | 株式会社东芝 | Semiconductor light emitting element |
| US8067780B2 (en) | 2006-09-05 | 2011-11-29 | Epistar Corporation | Light emitting device and the manufacture method thereof |
| CN101150156B (en) * | 2006-09-22 | 2012-05-30 | 晶元光电股份有限公司 | Lighting component and its making method |
| CN101685842B (en) * | 2008-09-25 | 2012-12-05 | 晶元光电股份有限公司 | Optoelectronic semiconductor device |
| US8513688B2 (en) | 2009-12-02 | 2013-08-20 | Walsin Lihwa Corporation | Method for enhancing electrical injection efficiency and light extraction efficiency of light-emitting devices |
| CN103456858A (en) * | 2012-05-28 | 2013-12-18 | 新世纪光电股份有限公司 | Light emitting element and method for manufacturing the same |
| CN103594582A (en) * | 2013-10-26 | 2014-02-19 | 溧阳市东大技术转移中心有限公司 | High-light-emitting-efficiency vertical type light-emitting diode |
| CN104851947A (en) * | 2015-04-21 | 2015-08-19 | 北京邮电大学 | LED chip with surface roughening transmitting structure and manufacturing method thereof |
| CN105051916A (en) * | 2012-07-31 | 2015-11-11 | 欧司朗光电半导体有限公司 | Reflective contact layer system for an optoelectronic component and method for producing same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102956781B (en) * | 2011-08-31 | 2015-03-11 | 新世纪光电股份有限公司 | Light-emitting element and manufacturing method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5869849A (en) * | 1995-10-05 | 1999-02-09 | Industry Technology Research Institute | Light-emitting diodes with high illumination |
| US5789768A (en) * | 1997-06-23 | 1998-08-04 | Epistar Corporation | Light emitting diode having transparent conductive oxide formed on the contact layer |
| US6207972B1 (en) * | 1999-01-12 | 2001-03-27 | Super Epitaxial Products, Inc. | Light emitting diode with transparent window layer |
| DE19926958B4 (en) * | 1999-06-14 | 2008-07-31 | Osram Opto Semiconductors Gmbh | GaAs (In, Al) P-type ZnO window layer light emission semiconductor diode |
-
2004
- 2004-04-08 CN CNU2004200364438U patent/CN2760762Y/en not_active Expired - Lifetime
- 2004-08-12 DE DE200420012665 patent/DE202004012665U1/en not_active Expired - Lifetime
- 2004-09-03 GB GB0419630A patent/GB2413008B8/en not_active Expired - Fee Related
- 2004-09-14 FR FR0452048A patent/FR2868878B3/en not_active Expired - Lifetime
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8664686B2 (en) | 2006-09-05 | 2014-03-04 | Epistar Corporation | Light emitting device and the manufacture method thereof |
| US8067780B2 (en) | 2006-09-05 | 2011-11-29 | Epistar Corporation | Light emitting device and the manufacture method thereof |
| CN101150156B (en) * | 2006-09-22 | 2012-05-30 | 晶元光电股份有限公司 | Lighting component and its making method |
| CN101232068B (en) * | 2007-01-25 | 2011-10-19 | 株式会社东芝 | Semiconductor light emitting element |
| CN101685842B (en) * | 2008-09-25 | 2012-12-05 | 晶元光电股份有限公司 | Optoelectronic semiconductor device |
| US8513688B2 (en) | 2009-12-02 | 2013-08-20 | Walsin Lihwa Corporation | Method for enhancing electrical injection efficiency and light extraction efficiency of light-emitting devices |
| CN102117871A (en) * | 2009-12-31 | 2011-07-06 | 华新丽华股份有限公司 | Method for gaining electric injection efficiency and light extraction efficiency of luminescent device |
| CN103456858A (en) * | 2012-05-28 | 2013-12-18 | 新世纪光电股份有限公司 | Light emitting element and method for manufacturing the same |
| CN103456858B (en) * | 2012-05-28 | 2016-09-14 | 新世纪光电股份有限公司 | Light emitting element and method for manufacturing the same |
| CN105051916A (en) * | 2012-07-31 | 2015-11-11 | 欧司朗光电半导体有限公司 | Reflective contact layer system for an optoelectronic component and method for producing same |
| CN105051916B (en) * | 2012-07-31 | 2017-07-25 | 欧司朗光电半导体有限公司 | Reflexive contact layer system and its manufacture method for opto-electronic device |
| CN103594582A (en) * | 2013-10-26 | 2014-02-19 | 溧阳市东大技术转移中心有限公司 | High-light-emitting-efficiency vertical type light-emitting diode |
| CN103594582B (en) * | 2013-10-26 | 2016-04-27 | 溧阳市东大技术转移中心有限公司 | A kind of vertical type light emitting diode of high light-emitting efficiency |
| CN104851947A (en) * | 2015-04-21 | 2015-08-19 | 北京邮电大学 | LED chip with surface roughening transmitting structure and manufacturing method thereof |
| CN104851947B (en) * | 2015-04-21 | 2017-11-14 | 北京邮电大学 | A kind of LED chip with surface roughening translucent construction and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2413008A (en) | 2005-10-12 |
| FR2868878B3 (en) | 2006-03-24 |
| GB2413008B (en) | 2006-06-28 |
| GB0419630D0 (en) | 2004-10-06 |
| FR2868878A3 (en) | 2005-10-14 |
| GB2413008A8 (en) | 2007-01-15 |
| DE202004012665U1 (en) | 2005-02-03 |
| GB2413008B8 (en) | 2007-01-15 |
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