GB2413008A8 - GaN-based light-emitting diode - Google Patents

GaN-based light-emitting diode

Info

Publication number
GB2413008A8
GB2413008A8 GB0419630A GB0419630A GB2413008A8 GB 2413008 A8 GB2413008 A8 GB 2413008A8 GB 0419630 A GB0419630 A GB 0419630A GB 0419630 A GB0419630 A GB 0419630A GB 2413008 A8 GB2413008 A8 GB 2413008A8
Authority
GB
United Kingdom
Prior art keywords
gan
emitting diode
based light
light
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB0419630A
Other versions
GB2413008B8 (en
GB2413008A (en
GB0419630D0 (en
GB2413008B (en
Inventor
Schang-Jing Hon
Mu-Jen Lai
Chi-Feng Chan
Jenn-Bin Huang
Chen-Fu Chiang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Supernova Optoelectronics Corp
Original Assignee
Supernova Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Supernova Optoelectronics Corp filed Critical Supernova Optoelectronics Corp
Publication of GB0419630D0 publication Critical patent/GB0419630D0/en
Publication of GB2413008A publication Critical patent/GB2413008A/en
Application granted granted Critical
Publication of GB2413008B publication Critical patent/GB2413008B/en
Publication of GB2413008B8 publication Critical patent/GB2413008B8/en
Publication of GB2413008A8 publication Critical patent/GB2413008A8/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
GB0419630A 2004-04-08 2004-09-03 GaN-based light-emitting diode structure Active GB2413008B8 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNU2004200364438U CN2760762Y (en) 2004-04-08 2004-04-08 Gallium nitride LED structure

Publications (5)

Publication Number Publication Date
GB0419630D0 GB0419630D0 (en) 2004-10-06
GB2413008A GB2413008A (en) 2005-10-12
GB2413008B GB2413008B (en) 2006-06-28
GB2413008B8 GB2413008B8 (en) 2007-01-15
GB2413008A8 true GB2413008A8 (en) 2007-01-15

Family

ID=34171197

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0419630A Active GB2413008B8 (en) 2004-04-08 2004-09-03 GaN-based light-emitting diode structure

Country Status (4)

Country Link
CN (1) CN2760762Y (en)
DE (1) DE202004012665U1 (en)
FR (1) FR2868878B3 (en)
GB (1) GB2413008B8 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI318013B (en) 2006-09-05 2009-12-01 Epistar Corp A light emitting device and the manufacture method thereof
CN101150156B (en) * 2006-09-22 2012-05-30 晶元光电股份有限公司 Lighting component and its making method
JP2008182069A (en) * 2007-01-25 2008-08-07 Toshiba Corp Semiconductor light-emitting element
CN101685842B (en) * 2008-09-25 2012-12-05 晶元光电股份有限公司 Optoelectronic semiconductor device
US8513688B2 (en) 2009-12-02 2013-08-20 Walsin Lihwa Corporation Method for enhancing electrical injection efficiency and light extraction efficiency of light-emitting devices
CN102117871A (en) * 2009-12-31 2011-07-06 华新丽华股份有限公司 Method for gaining electric injection efficiency and light extraction efficiency of luminescent device
TW201349569A (en) * 2012-05-28 2013-12-01 Genesis Photonics Inc Light-emitting component and method for manufacturing the same
CN102956781B (en) * 2011-08-31 2015-03-11 新世纪光电股份有限公司 Light-emitting element and manufacturing method thereof
DE102012106998A1 (en) * 2012-07-31 2014-02-06 Osram Opto Semiconductors Gmbh Reflective contact layer system for an optoelectronic component and method for its production
CN103594582B (en) * 2013-10-26 2016-04-27 溧阳市东大技术转移中心有限公司 A kind of vertical type light emitting diode of high light-emitting efficiency
CN104851947B (en) * 2015-04-21 2017-11-14 北京邮电大学 A kind of LED chip with surface roughening translucent construction and preparation method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5869849A (en) * 1995-10-05 1999-02-09 Industry Technology Research Institute Light-emitting diodes with high illumination
US5789768A (en) * 1997-06-23 1998-08-04 Epistar Corporation Light emitting diode having transparent conductive oxide formed on the contact layer
US6207972B1 (en) * 1999-01-12 2001-03-27 Super Epitaxial Products, Inc. Light emitting diode with transparent window layer
DE19926958B4 (en) * 1999-06-14 2008-07-31 Osram Opto Semiconductors Gmbh GaAs (In, Al) P-type ZnO window layer light emission semiconductor diode

Also Published As

Publication number Publication date
GB2413008B8 (en) 2007-01-15
GB2413008A (en) 2005-10-12
CN2760762Y (en) 2006-02-22
FR2868878A3 (en) 2005-10-14
GB0419630D0 (en) 2004-10-06
FR2868878B3 (en) 2006-03-24
DE202004012665U1 (en) 2005-02-03
GB2413008B (en) 2006-06-28

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Legal Events

Date Code Title Description
711B Application made for correction of error (sect. 117/77)
711G Correction allowed (sect. 117/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20141009 AND 20141015