CN104851947B - A kind of LED chip with surface roughening translucent construction and preparation method thereof - Google Patents

A kind of LED chip with surface roughening translucent construction and preparation method thereof Download PDF

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CN104851947B
CN104851947B CN201510189107.XA CN201510189107A CN104851947B CN 104851947 B CN104851947 B CN 104851947B CN 201510189107 A CN201510189107 A CN 201510189107A CN 104851947 B CN104851947 B CN 104851947B
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elastic material
roughening
organic elastic
type semiconductor
material film
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CN104851947A (en
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刘凯
任晓敏
黄永清
王�琦
段晓峰
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北京邮电大学
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

The invention discloses a kind of LED chip with surface roughening translucent construction and preparation method thereof, belongs to LED chip manufacture and field of LED illumination.The described LED chip with surface roughening translucent construction, including the substrate of chip, n-type semiconductor structure, i types active area and p-type semiconductor structure, and form the roughening translucent construction in chip surface;The roughening translucent construction is the roughening layer of shear-face angle consecutive variations.The roughening translucent construction is in p-type semiconductor structure, or on the passivation layer of p-type semiconductor structure, either in the transparency electrode of p-type semiconductor structure or on the transparent organic layer of p-type semiconductor structure or in n-type semiconductor structure, or on substrate.The present invention can improve LED component light extraction to be influenceed by the angle of total reflection, so as to lift the light extraction efficiency of LED component.

Description

A kind of LED chip with surface roughening translucent construction and preparation method thereof

Technical field

The present invention relates to a kind of LED chip, more particularly to a kind of LED chip with surface roughening translucent construction and Its preparation method, belong to LED chip manufacture and field of LED illumination.

Background technology

The global problem such as global greenhouse effect, energy shortage increasingly causes split greening in worldwide in recent years The concern of color eco-friendly power source and novel energy-saving emission-reducing technology, the one side whole world is all in Devoting Major Efforts To Developing renewable and clean energy resource, such as Solar energy, wind energy etc.;Another aspect also increases exploitation dynamics in terms of the energy is rationally effectively utilized, and is reflected in illumination and shows It is exactly constantly weeding out the old and bring forth the new and extensive use for various energy-conserving light sources to show aspect.Among these, LED (light emitting diode) is with its low energy Consumption, specular removal, good light utilization efficiency, stable quality and high reliability obtain more and more extensive concern and application. Lighting field, the white light LEDs based on GaN LED chips are considered as 21 century novel illumination light source, it is contemplated that in 10 years of future, Lighting field is by with the annual growth Fast Growth more than 30% out of doors, and its annual growth of lighting field will exceed indoors 100%.And it instead of other light sources substantially in display field LED backlight.

As shown in Figure 1, existing LED chip structure includes substrate 1, n-type semiconductor structure 2, i types active area 3 and p-type Semiconductor structure 4, the substrate 1 can be by Al2O3The sapphire of crystal material, SiC, Si, GaAs, GaP, InP or GaN etc. half Conductor crystalline material is formed, and n-type semiconductor structure 2 is by n-type AlxInyGa1-x-yN (0≤x≤1,0≤y≤1), AlxInyGa1-x-yP (0≤x≤1,0≤y≤1) or AlxInyGa1-x-yAs (0≤x≤1,0≤y≤1) material is formed, and can be layer of material or more The material of layer different component is formed, and i types active area 3 can be by one or more pairs of i types AlxInyGa1-x-yN (0≤x≤1,0≤y≤ 1)、AlxInyGa1-x-yP (0≤x≤1,0≤y≤1) or AlxInyGa1-x-yThe SQW structure of As (0≤x≤1,0≤y≤1) material Into or monolayer material body structure sheaf form, p-type semiconductor structure 4 can be by one or more layers AlxInyGa1-x-yN(0≤x ≤ 1,0≤y≤1), AlxInyGa1-x-yP (0≤x≤1,0≤y≤1) or AlxInyGa1-x-yAs (0≤x≤1,0≤y≤1) material Layer is formed, and thickness is 1~20 micron altogether for n-type semiconductor structure 2, i types active area 3, this three layers of p-type semiconductor structure 4.

The light sent in LED chip in i types active area 3 includes the surface of LED chip to launching in chip all directions 5th, bottom surface 6 and side 7, as shown in Figure 2.Wherein it is possible to the light mainly launched to surface 5 and side 7 being utilized, and the bottom of to The light that face 6 is launched can also be utilized after surface 5 is reflected to.I types active area 3 is directly launched to surface 5 and launched the bottom of to The light that the back reflection of face 6 goes back to surface 5 account for that the 70% of light can be utilized.For LED component, the surface 5 of its light extraction is usually flat Face-port mouth, because the refractive index of window semi-conducting material is higher than air, the presence for knowing the angle of total reflection by optical principle will be very Deteriorate the light extraction efficiency of LED component in big degree, as shown in figure 3, being more than angle of total reflection θBLight will be fully reflective by upper surface 5 And it can not be utilized.The p-type semiconductor structure 4 formed for GaN material, its refractive index are 2.4, draw θB=24.5 degree;It is right In the p-type semiconductor structure 4 that GaP materials are formed, its refractive index is 3.4, draws θB=17 degree.And for LED chip, it is launched Light is spontaneous radiation, generally it can be thought that the emergent light of i types active area 3 emission probability on 360 degree of direction is identical, this From the point of view of sample, influenceed by the angle of total reflection, it is contemplated that the reflected light GaN LED of bottom surface 6 light extraction efficiency only has 14% or so, feux rouges LED is even more that can only achieve 10% or so.So the outgoing light efficiency for how lifting LED chip upper surface 5 is lifting LED chip One key technology of performance.

At present, in order to lift LED light extraction efficiency, multiple technologies are employed to solve the total reflection of LED chip upper surface 5 Influence, such as photonic crystal [bibliography 1-6], flip-chip bonded structure [bibliography 7-9], surface plasmons [bibliography 10-12], chip form optimization [bibliography 13-14] and surface roughening [bibliography 15-16] etc..

Bibliography:

[1] Wen Xisen, photon/phonon crystal theory and technology, Beijing, Science Press, 2006;

[2] Li Tianbao, Liang Jian, Xu Bingshe, photonic crystal improve the progress of GaN base LED light extraction efficiency, semiconductor light Electricity, 2010,31 (3):339-343,371;

[3]Lee R K,Xu Y,Yariv A,Modified spontaneous emission from a two- dimensional photonic band gap crystal slab,J.Opt.Soc.Am.,2000,17:1438-1442;

[4] Kim D H, Cho C O, Roh Y G, et al., Enhanced light extraction from GaN- based light-emitting diodes with holographically generated two-dimensional Photonic crystal patterns, [J] .Appl.Phys.Lett., 2005,87:203508-203510;

[5]Wiere J J,Krames M R,Epler J E,et al.,InGaN/GaN quantum-well hetero structure light-emitting diodes employing photonic crystal structures, [J].Appl.Phys.Lett.,2004,84:3885-3887;

[6]Orita K,Tamura S,Takizawa T,et al.,High extraction-efficiency blue light-emitting diode using extended-pitch photonic crystal,[J] .Jpn.J.Appl.Phys.,2004,43:5809-5813;

[7] surname it is big enter, Hu Fei, Luo Yi, wait research [J] photoelectricity of .GaN base light emitting diode chip light extraction efficiencies Sub- laser, 2005,16 (4):385-389;

[8]WIERER J.J.,S TEIGERWALD D A,KRAMES M R,et al.,High-power AlGaInN flip-chip light-emitting diodes[J].A ppl.Phys.Lett.,2001,78(22):3379-3381;

[9] Xiong Weiping, Fan Guanghan, Li Qi, the research of light extraction efficiency of LED, photon journal, 2010,39 (11) are improved: 1956-1960;

[10] mountains in a range peak, InGaN bases blue-ray LED and e-beam induced deposition method with periodic micro structure are in photonic crystal Application in preparation, master's thesis, The College of Physics of Peking University condensed state specialty, 2001;

[11] Zhang Jin dragon, Liu Xu, Li Mingyu etc., surface plasma-wave, optics is expeditiously coupled out using prism structure Instrument, 2006,08;

[12]Koichi Okamoto,Isamu Niki,Alexander shyatser et al.,Surface plasmon enhanced InGaN light emiter,Proc.SPIE,2005,5733,94;

[13]KRAMES M R,OCHIAI-HOLCOMB M,HOFLER G E,et al.High-power truncated-inverted-pyramid(AlxGa1-x)0.5In0.5P/GaP light-emitting diodes exhibiting>50%external quantum efficiency, [J] .Appl.Phys.Lett., 1999,75 (22): 2365-2367;

[14] Xiong Weiping, Fan Guanghan, Li Qi, the research of light extraction efficiency of LED, photon journal, 2010,39 (11) are improved: 1956-1960;

[15]FUJII T,GAO Y,SHA RMA R,et al.Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening[J] .Appl.Phys.Lett.,2004,84(6):855-857;

[16] Liu Sinan, Zou De pardon etc., surface coarsening improve red-light LED light extraction efficiency, Solid State Electronics research is with entering Exhibition, 2008,28 (2):245-247;

The content of the invention

It is described it is an object of the invention to provide a kind of LED chip with surface roughening translucent construction and preparation method thereof Preparation method can be formed shear-face angle consecutive variations roughening layer, and thus constitute and a kind of there is surface roughening structure LED chip, the influence that LED chip plane light window is totally reflected is reduced by the introducing of roughening structure, so as to lift LED chip Light extraction efficiency.

The described LED chip with surface roughening translucent construction, including the substrate of chip, n-type semiconductor structure, i types Active area and p-type semiconductor structure, and form the roughening translucent construction in chip surface;The roughening translucent construction is section The roughening layer of angle consecutive variations.

The roughening translucent construction in p-type semiconductor structure, either on the passivation layer of p-type semiconductor structure or In the transparency electrode of p-type semiconductor structure, or on the transparent organic layer of p-type semiconductor structure.

If described roughening translucent construction makes by the following method in p-type semiconductor structure:

(1) organic elastic material membrane is coated in LED chip p-type semiconductor structure, described organic elastic material can To be the organic materials such as photoresist, polyimides, organic elastic material film thickness

(2) sputtering or evaporation metal composite bed on organic elastic material film, to stick metal, thickness exists bottomTop layer is main metal level, and thickness existsIt is described to stick metal and select the gold such as Ti, In, Zn, Cr Category;Described main metal can select the metals such as Al, Ti, Cr, Zn, Ni, W, Mo, Au.

(3) the above-mentioned p-type with organic elastic material film and metallic film is partly led on heating platform or in baking oven Body structure carries out thermal induction, and the roughening structure of shear-face angle consecutive variations, thermal induction temperature are formed in organic elastic material film 80 DEG C~500 DEG C of degree;

(4) metallic film is removed by dry or wet etch;

(5) the shear-face angle consecutive variations roughening structure formed in organic elastic material film is shifted by dry etching Into p-type semiconductor material.

If the roughening translucent construction makes by the following method on the passivation layer of p-type semiconductor structure:

A, one layer of passivation layer is made in LED chip p-type semiconductor structure, passivation material is silica, titanium oxide, silicon Or the dielectric material such as silicon nitride, passivation layer thickness

B, organic elastic material membrane is coated over the passivation layer, and organic elastic material can be photoresist, polyimides etc. Organic material, organic elastic material film thickness

C, sputtering or evaporation metal composite bed on elastic organic material film, to stick metal, thickness exists bottomTop layer is main metal level, and thickness existsIt is described to stick metal and select Ti, In, Zn, Cr etc. Metal;Described main metal can select the metals such as Al, Ti, Cr, Zn, Ni, W, Mo, Au.

D, thermal induction is carried out to said structure on heating platform or in baking oven, is formed and cut in organic elastic material film Face angle degree consecutive variations roughening structure, 80 DEG C~500 DEG C of thermal induction temperature;

E, metallic film is removed by dry or wet etch;

F, the shear-face angle consecutive variations roughening structure formed in organic elastic material film is shifted by dry etching Into passivation layer.

If the roughening translucent construction makes by the following method in the transparency electrode of p-type semiconductor structure:

A, layer of transparent electrode is made in LED chip p-type semiconductor structure, electrode material is the electrode material such as ITO, ZnO Material, transparency electrode thickness

B, organic elastic material membrane is coated on the transparent electrodes, and organic elastic material can be photoresist, polyimides Deng organic material, organic elastic material film thickness

C, sputtering or evaporation metal composite bed on organic elastic material film, to stick metal, thickness exists bottomTop layer is main metal level, and thickness existsIt is described to stick metal and select Ti, In, Zn, Cr etc. Metal;Described main metal can select the metals such as Al, Ti, Cr, Zn, Ni, W, Mo, Au.

D, thermal induction is carried out to said structure on heating platform or in baking oven, is formed and cut in organic elastic material film Face angle degree consecutive variations roughening structure, 80 DEG C~500 DEG C of thermal induction temperature;

E, metallic film is removed by dry or wet etch;

F, the shear-face angle consecutive variations roughening structure formed in organic elastic material film is shifted by dry etching Into transparency electrode.

If the roughening translucent construction makes by the following method on the transparent organic layer of p-type semiconductor structure:

A, transparent organic elastic material film is coated in LED chip p-type semiconductor structure, transparent organic elastic material can It is transparent organic to be the transparent organic elastic material such as SU-8, epoxy resin, makrolon, polymethyl methacrylate or silica gel Elastic material membrane thickness

B, sputtering or evaporation metal composite bed on transparent organic elastic material film, to stick metal, thickness exists bottom Top layer is main metal level, and thickness existsIt is described to stick metal and select the gold such as Ti, In, Zn, Cr Category;Described main metal can select the metals such as Al, Ti, Cr, Zn, Ni, W, Mo, Au.

C, thermal induction, the shape in transparent organic elastic material film are carried out to said structure on heating platform or in baking oven Into the roughening structure of shear-face angle consecutive variations, 80 DEG C~500 DEG C of thermal induction temperature;

D, metallic film is removed by dry or wet etch;

If described roughening translucent construction makes by the following method in n-type semiconductor structure:

A, LED chip p-type semiconductor structure is bonded or is adhered on a solid structure, then pass through the substrate of chip The methods of mechanical reduction, wet etching, dry etching or laser lift-off, removes, and exposes n-type semiconductor structure;

B, organic elastic material membrane, organic elastic material film thickness are coated in LED chip n-type semiconductor structure

C, sputtering or evaporation metal composite bed on organic elastic material film, to stick metal, thickness exists bottomTop layer is main metal level, and thickness exists

D, the above-mentioned n-type with organic elastic material film and metal composite layer is partly led on heating platform or in baking oven Body structure carries out thermal induction, and the roughening structure of shear-face angle consecutive variations, thermal induction temperature are formed in organic elastic material film 80 DEG C~500 DEG C of degree;

E, metallic film is removed by dry or wet etch;

F, the shear-face angle consecutive variations roughening structure formed in organic elastic material film is shifted by dry etching Into n-type semiconductor structural material;

If described roughening translucent construction makes by the following method on the substrate of chip:

A, organic elastic material membrane, organic elastic material film thickness are coated on the substrate of LED chip

B, sputtering or evaporation metal composite bed on organic elastic material film, to stick metal, thickness exists bottomTop layer is main metal level, and thickness exists

C, the above-mentioned chip with organic elastic material film and metal composite layer is served as a contrast on heating platform or in baking oven Bottom carries out thermal induction, and the roughening structure of shear-face angle consecutive variations, thermal induction temperature 80 are formed in organic elastic material film DEG C~500 DEG C;

D, metallic film is removed by dry or wet etch;

E, the shear-face angle consecutive variations roughening structure formed in organic elastic material film is shifted by dry etching Into chip substrate material.

In described wet etching, Au layers etching liquid selection KI:I2:H2O solution, Ti layers etching liquid selection HCl:H2O is molten Liquid, Al layers etching liquid selection H3PO4:H2O or HCl:H2O solution;Wherein, KI:I2:H2O=(65~100) g:(25~50) g: 300ml;HCl and H2O volume ratio is (1:0)~(1:3);H3PO4And H2O volume ratio is (1:0)~(1:3), wherein, salt Sour HCl mass percent concentration is 37%, phosphoric acid H3PO4Mass percent concentration be 84%.

The advantage of the invention is that:

The present invention can improve LED component light extraction to be influenceed by the angle of total reflection, so as to lift the light extraction efficiency of LED component.

Brief description of the drawings

Fig. 1 is the structural representation of LED chip in background of invention;

Fig. 2 is LED chip outer surface schematic diagram in background of invention;

Fig. 3 is optical total-reflection schematic diagram in background of invention;

Fig. 4 is roughening advantage schematic diagram in the technology of the present invention advantage explanation;

Fig. 5 is the embodiment of the present invention 1, embodiment 2, the schematic diagram of embodiment 3;

Fig. 6 is the roughening body structure surface photo of the embodiment of the present invention 1;

Fig. 7 is the schematic diagram of the embodiment of the present invention 4;

Fig. 8 is the schematic diagram of the embodiment of the present invention 5;

Fig. 9 is the schematic diagram of the embodiment of the present invention 6;

Figure 10 is the schematic diagram of the embodiment of the present invention 7;

Figure 11 is the schematic diagram of the embodiment of the present invention 8.

In figure:

1- substrates;2-n type semiconductor structures;3- i type active areas;4- p-type semiconductor structures;

5- surfaces;6-LED die bottom surfaces;7-LED chip sides;8- passivation layers;

9- transparency electrodes;10- transparent organic materials;11- solid structures.

Embodiment

The present invention is described in detail with reference to the accompanying drawings and examples.

Embodiment 1,As shown in figure 5, a kind of LED chip with surface roughening translucent construction, including substrate 1, the lining Epitaxial growth has n-type Al successively for the upside at bottom 1xInyGa1-x-yP (0≤x≤1,0≤y≤1) semiconductor structure 2, i types AlxInyGa1-x-yP (0≤x≤1,0≤y≤1) Quantum well active districts 3 and p-type AlxInyGa1-x-yP (0≤x≤1,0≤y≤1) half Conductor structure 4, its surface 5 are the roughening translucent constructions of shear-face angle consecutive variations, roughening translucent construction photo as shown in fig. 6, Its cycle is 7 μm.

The preparation method of above-mentioned LED chip is:

(1) photoresist AZ5214E films, 2 μm of film thickness are coated in LED chip p-type semiconductor structure;

(2) sputtered metal film Ti/Au on a photoresist, Ti film thicknessesAu film thicknesses

(3) 80 DEG C of baking 1min on heating platform;

(4) metallic film is removed by wet etching, Au layers etching liquid selection KI:I2:H2O solution, the choosing of Ti layers etching liquid Select HCl:H2O solution;Wherein, KI:I2:H2O=(65~100) g:(25~50) g:300ml;HCl:H2O=(1:0)~(1: 3)。

(5) the shear-face angle consecutive variations roughening structure formed in organic elastic material film is shifted by dry etching Into p-type semiconductor material, dry etching selection ICP is etched, and dry etch process parameter is as follows:

ICP power=1800W, RF power=300W, chamber pressure=50mtorr, Cl2Flow=30sccm, Ar flows= 15sccm, BCl3Flow=50sccm.

In addition, corresponding plasma etching can also apply following condition, it is as a result basically identical with above-mentioned shown result.

ICP power=1400W, RF power=150W, chamber pressure=80mtorr, Cl2Flow=50sccm, Ar flows= 10sccm, BCl3Flow=20sccm;

ICP power=1000W, RF power=200W, chamber pressure=100mtorr, Cl2Flow=60sccm, Ar flows= 25sccm, BCl3Flow=20sccm.

Embodiment 2,Schematic diagram is with shown in Fig. 5, a kind of LED chip with surface roughening translucent construction, including substrate 1, Epitaxial growth has n-type Al successively for the upside of the substrate 1xInyGa1-x-yP (0≤x≤1,0≤y≤1) semiconductor structure 2, i types AlxInyGa1-x-yP (0≤x≤1,0≤y≤1) Quantum well active districts 3 and p-type AlxInyGa1-x-yP (0≤x≤1,0≤y≤1) half Conductor structure 4, its surface 5 are the roughening translucent constructions of shear-face angle consecutive variations, and the roughening translucent construction cycle is 3 μm.

The preparation method of above-mentioned LED chip is as follows:

(1) photoresist AZ5214E films, 1.4 μm of film thickness are coated in LED chip p-type semiconductor structure;

(2) sputtered metal film Ti/Au on a photoresist, Ti film thicknessesAu film thicknesses

(3) 100 DEG C of baking 1min on heating platform;

(4) metallic film is removed by wet etching, Au layers etching liquid selection KI:I2:H2O solution, the choosing of Ti layers etching liquid Select HCl:H2O solution;Wherein, KI:I2:H2O=(65~100) g:(25~50) g:300ml;HCl and H2O volume ratio is (1: 0)~(1:3).

(5) the shear-face angle consecutive variations roughening structure formed in organic elastic material film is shifted by dry etching Into p-type semiconductor material, dry etching selection ICP etchings, etching technics is the same as embodiment 1.

Embodiment 3,Schematic diagram is with shown in Fig. 5, a kind of LED chip with surface roughening translucent construction, including substrate 1, Epitaxial growth has n-type Al successively for the upside of the substrate 1xInyGa1-x-yP (0≤x≤1,0≤y≤1) semiconductor structure 2, i types AlxInyGa1-x-yP (0≤x≤1,0≤y≤1) Quantum well active districts 3 and p-type AlxInyGa1-x-yP (0≤x≤1,0≤y≤1) half Conductor structure 4, its surface 5 are the roughening translucent constructions of shear-face angle consecutive variations, and the roughening translucent construction cycle is 14 μm.

The preparation method of above-mentioned LED chip is as follows:

(1) photoresist AZ5214E films, 2 μm of film thickness are coated in LED chip p-type semiconductor structure;

(2) sputtered metal film Ti/Au on a photoresist, Ti film thicknessesAu film thicknesses

(3) 100 DEG C of baking 0.5min on heating platform;

(4) metallic film is removed by wet etching, Au layers etching liquid selection KI:I2:H2O solution, the choosing of Ti layers etching liquid Select HCl:H2O solution;

(5) the shear-face angle consecutive variations roughening structure formed in organic elastic material film is shifted by dry etching Into p-type semiconductor material, dry etching selection ICP (Inductively Coupled Plasma) is etched, and etching technics is same Embodiment 1.

Embodiment 4,Schematic diagram is with shown in Fig. 7, a kind of LED chip with surface roughening translucent construction, including substrate 1, Epitaxial growth has n-type Al successively for the upside of the substrate 1xInyGa1-x-yAs (0≤x≤1,0≤y≤1) semiconductor structure 2, i types AlxInyGa1-x-yAs (0≤x≤1,0≤y≤1) Quantum well active districts 3 and p-type AlxInyGa1-x-yAs (0≤x≤1,0≤y≤1) Semiconductor structure 4, passivation layer 8 is made in p-type semiconductor structure 4, surface 5 is the roughening printing opacity knot of shear-face angle consecutive variations Structure, roughening translucent construction cycle are 5 μm.

The preparation method of above-mentioned LED chip is as follows:

(1) made in LED chip p-type semiconductor structure 4 using PECVDSilicon oxide passivation layer 8;

(2) photoresist AZ5214E films, film thickness are coated on passivation layer 8

(3) sputtered metal film Ti/Al on a photoresist, Ti film thicknessesAl film thicknesses

(4) 100 DEG C of baking 1.5min on heating platform;

(5) metallic film is removed by wet etching, Al layers etching liquid selection H3PO4:H2O solution, the choosing of Ti layers etching liquid Select HCl:H2O solution;H3PO4And H2O volume ratio is (1:0)~(1:3), HCl and H2O volume ratio is (1:0)~(1:3).

(6) the shear-face angle consecutive variations roughening structure formed in organic elastic material film is shifted by dry etching Into passivation layer 8, dry etching selection RIE (Reactive Ion Etching), etching technics is as follows:

RF (Radio Frequency) power=100W, chamber pressure=30mtorr, CHF3Flow=25sccm, Ar flows= 25sccm。

Embodiment 5,Schematic diagram is with shown in Fig. 8, a kind of LED chip with surface roughening translucent construction, including substrate 1, Epitaxial growth has n-type Al successively for the upside of the substrate 1xInyGa1-x-yN (0≤x≤1,0≤y≤1) semiconductor structure 2, i types AlxInyGa1-x-yN (0≤x≤1,0≤y≤1) Quantum well active districts 3 and p-type AlxInyGa1-x-yN (0≤x≤1,0≤y≤1) half Conductor structure 4, transparency electrode 9 is made in p-type semiconductor structure 4, surface 5 is the roughening printing opacity knot of shear-face angle consecutive variations Structure, roughening translucent construction cycle are 11 μm.

The preparation method of above-mentioned LED chip is as follows:

(1) applying electronic beam makes in LED chip p-type semiconductor structure 4ITO (Indium Tin Oxide) transparency electrode 9;

(2) photoresist PI1511 Kaptons, 1 μm of film thickness are coated in transparency electrode 9;

(3) sputtered metal film Ti/Al on a photoresist, Ti film thicknessesAl film thicknesses

(4) in an oven 250 DEG C baking 15.0min;

(5) metallic film is removed by wet etching, Al layers etching liquid selection H3PO4:H2O solution, the choosing of Ti layers etching liquid Select HCl:H2O solution;H3PO4And H2O volume ratio is (1:0)~(1:3), HCl and H2O volume ratio is (1:0)~(1:3).

(6) the shear-face angle consecutive variations roughening structure formed in organic elastic material film is shifted by dry etching Into transparency electrode 9, dry etching selection RIE, etching technics is as follows:

RF power=150W, chamber pressure=30mtorr, CHF3Flow=25sccm, Ar flows=15sccm, O2Flow= 5sccm。

Embodiment 6,Schematic diagram is with shown in Fig. 9, a kind of LED chip with surface roughening translucent construction, including substrate 1, Epitaxial growth has n-type Al successively for the upside of the substrate 1xInyGa1-x-yN (0≤x≤1,0≤y≤1) semiconductor structure 2, i types AlxInyGa1-x-yN (0≤x≤1,0≤y≤1) Quantum well active districts 3 and p-type AlxInyGa1-x-yN (0≤x≤1,0≤y≤1) half Conductor structure 4, transparent organic material 10 is made in p-type semiconductor structure 4, its surface 5 is the rough of shear-face angle consecutive variations Change translucent construction, the roughening translucent construction cycle is 18 μm.

The preparation method of above-mentioned LED chip is as follows:

(1) transparent organic elastic material SU-8 films, 20 μm of film thickness are coated in LED chip p-type semiconductor structure;

(2) sputtered metal film Ti/Al on a photoresist, Ti film thicknesses1 μm of Al film thicknesses;

(3) lower 500 DEG C of nitrogen environment toasts 30min in an oven;

(4) metallic film is removed by wet etching, Al layers etching liquid selection H3PO4:H2O solution, the choosing of Ti layers etching liquid Select HCl:H2O solution.H3PO4And H2O volume ratio is (1:0)~(1:3), HCl and H2O volume ratio is (1:0)~(1:3).

Embodiment 7,As shown in Figure 10, a kind of LED chip with surface roughening translucent construction, including substrate 1, the lining Epitaxial growth has n-type Al successively for the upside at bottom 1xInyGa1-x-yP (0≤x≤1,0≤y≤1) semiconductor structure 2, i types AlxInyGa1-x-yP (0≤x≤1,0≤y≤1) Quantum well active districts 3 and p-type AlxInyGa1-x-yP (0≤x≤1,0≤y≤1) half Conductor structure 4, chip p-type semiconductor structure 4 is adhered on solid structure 11, then will by mechanical reduction and wet etching Substrate 1 removes, and is the roughening translucent construction of shear-face angle consecutive variations in the bottom surface 6 of the n-type semiconductor structure 2 exposed, rough Change translucent construction photo as shown in fig. 6, its cycle is 7 μm.

The preparation method of above-mentioned LED chip is:

(1) LED chip is adhered on the copper billet of solid structure 11 from the face of p-type semiconductor structure 4 by elargol;

(2) 9 microns and 3 microns of Al are passed through2O3Powder mull is by GaAs substrate thinnings to 25 microns of thickness;

(3) NH is passed through4OH:H2O2:H2O=1:4:20 corrosive liquids (volume ratio) are clean by remaining GaAs substrate etchings;

(4) photoresist AZ5214E films are coated on the bottom surface of LED chip n-type semiconductor structure 2 exposed, film is thick 2 μm of degree;

(5) sputtered metal film Ti/Au on a photoresist, Ti film thicknessesAu film thicknesses

(6) 80 DEG C of baking 1min on heating platform;

(7) metallic film is removed by wet etching, Au layers etching liquid selection KI:I2:H2O solution, the choosing of Ti layers etching liquid Select HCl:H2O solution;Wherein, KI:I2:H2O=(65~100) g:(25~50) g:300ml;HCl:H2O=(1:0)~(1: 3)。

(8) the shear-face angle consecutive variations roughening structure formed in organic elastic material film is shifted by dry etching Into n-type semiconductor, dry etching selection ICP is etched, and dry etch process parameter is as follows:

ICP power=1800W, RF power=300W, chamber pressure=50mtorr, Cl2Flow=30sccm, Ar flows= 15sccm, BCl3Flow=50sccm.

In addition, corresponding plasma etching can also apply following condition, it is as a result basically identical with above-mentioned shown result.

ICP power=1400W, RF power=150W, chamber pressure=80mtorr, Cl2Flow=50sccm, Ar flows= 10sccm, BCl3Flow=20sccm;

ICP power=1000W, RF power=200W, chamber pressure=100mtorr, Cl2Flow=60sccm, Ar flows= 25sccm, BCl3Flow=20sccm.

Embodiment 8,As shown in figure 11, a kind of LED chip with surface roughening translucent construction, including substrate 1, the lining Epitaxial growth has n-type Al successively for the upside at bottom 1xInyGa1-x-yP (0≤x≤1,0≤y≤1) semiconductor structure 2, i types AlxInyGa1-x-yP (0≤x≤1,0≤y≤1) Quantum well active districts 3 and p-type AlxInyGa1-x-yP (0≤x≤1,0≤y≤1) half Conductor structure 4, the bottom surface 6 of its substrate 1 is the roughening translucent construction of shear-face angle consecutive variations, and roughening translucent construction photo is as schemed Shown in 6, its cycle is 7 μm.

The preparation method of above-mentioned LED chip is:

(1) photoresist AZ5214E films, 2 μm of film thickness are coated on the substrate of LED chip;

(2) sputtered metal film Ti/Au on a photoresist, Ti film thicknessesAu film thicknesses

(3) 80 DEG C of baking 1min on heating platform;

(4) metallic film is removed by wet etching, Au layers etching liquid selection KI:I2:H2O solution, the choosing of Ti layers etching liquid Select HCl:H2O solution;Wherein, KI:I2:H2O=(65~100) g:(25~50) g:300ml;HCl:H2O=(1:0)~(1: 3)。

(5) the shear-face angle consecutive variations roughening structure formed in organic elastic material film is shifted by dry etching Into chip substrate material, dry etching selection ICP is etched, and dry etch process parameter is as follows:

ICP power=1800W, RF power=300W, chamber pressure=50mtorr, Cl2Flow=30sccm, Ar flows= 15sccm, BCl3Flow=50sccm.

In addition, corresponding plasma etching can also apply following condition, it is as a result basically identical with above-mentioned shown result.

ICP power=1400W, RF power=150W, chamber pressure=80mtorr, Cl2Flow=50sccm, Ar flows= 10sccm, BCl3Flow=20sccm;

ICP power=1000W, RF power=200W, chamber pressure=100mtorr, Cl2Flow=60sccm, Ar flows= 25sccm, BCl3Flow=20sccm.The LED chip with surface roughening translucent construction made using foregoing invention, it goes out Light efficiency can lift 10%~30% than the LED chip light extraction efficiency of traditional dawn light-emitting window.

The present invention takes above technical scheme, compared with prior art, has advantages below:

For in general LED chip, its light output surface is planar structure, as stated in the Background Art, due to window semiconductor The refractive index of material is higher than air, and the presence for knowing the angle of total reflection by optical principle will largely deteriorate LED component Light extraction efficiency, as shown in figure 3, being more than θBLight will be fully reflective by surface 5 and can not be utilized.The p formed for GaN material Type semiconductor structure 4, its refractive index are 2.4, draw θB=24.5 degree;The p-type semiconductor structure 4 formed for GaP materials, its Refractive index is 3.4, draws θB=17 degree.And for LED chip, it is spontaneous radiation that it, which launches light, generally it can be thought that active area 3 Emergent light on 360 degree of direction emission probability be identical, so see, influenceed by the angle of total reflection, it is contemplated that bottom surface 6 Reflected light GaN LED light extraction efficiency there was only 14% or so, red-light LED is even more that can only achieve 10% or so.The present invention provides A kind of method for the surface roughening structure for making shear-face angle consecutive variations, resulting in a kind of has surface roughening printing opacity The LED chip of structure.The introducing of roughened surface can improve LED component light extraction to a certain extent to be influenceed by the angle of total reflection, So as to lift the light extraction efficiency of LED component, if as shown in figure 4, exiting surface is plane, x2The incidence angle θ of point0More than being all-trans Firing angle, light can not be emitted, and because the influence of roughening curved surface, incidence angle are reduced to θ1Less than the angle of total reflection so as to be emitted, this Just improve the light extraction efficiency of device.Moreover, formed by using the different material characteristics between film under the conditions of thermal induction rough Change figure, the parameter of roughening figure is not only influenceed by the thermal expansion coefficient difference of material, and by the young modulus of thin-film material With the influence of Poisson rate, in addition, the thickness of thin-film material the cycle of the roughening structure of formation and amplitude can also be produced it is huge Influence.Thus, the cycle of roughening structure and amplitude can more fully be optimized using technology proposed by the invention.Mould Intend display only when being less than 10 in roughening cycle and Amplitude Ratio, roughening structure can be played to LED light extraction efficiency and significantly carried Effect is risen, its raising efficiency can be determined in 10% to 30% or so changes, this change by the cycle and Amplitude Ratio of roughening structure It is fixed.In addition, the roughening structure made by the present invention, its roughening cycle goes out optical wavelength much larger than LED component, generally in 400nm ~1550nm, roughening Cycle Length then go out more than 2 times of optical wavelength, and the cycle of roughening structure and Amplitude Ratio in LED component Less than 10, thus the angle change on roughening structure dimension can change the incident angle of emergent light, be all-trans so as to improve optics The influence of firing angle.If roughening yardstick goes out with LED, optical wavelength is suitable, and it is simply scattered in action, and it is to LED light extraction efficiency Castering action will significantly reduce.Further, in roughening structure proposed by the invention, it is produced in p-type semiconductor structure Roughening structure can obtain optimal LED light extraction efficiency lifting effect, and be produced on LED surface passivation layer, transparency electrode and Roughening structure in the photic zone of surface is below the roughening structure in p-type semiconductor structure to the castering action of LED light extraction efficiency, This is due to that p-type semiconductor structure is optical complete with similarly existing on passivation layer, the euphotic interface of transparency electrode and surface Reflection effect.

Claims (8)

  1. A kind of 1. preparation method of the LED chip with surface roughening translucent construction, it is characterised in that:
    If described roughening translucent construction makes by the following method in p-type semiconductor structure:
    (1) organic elastic material membrane, organic elastic material film thickness are coated in LED chip p-type semiconductor structure
    (2) sputtering or evaporation metal composite bed on organic elastic material film, to stick metal, thickness exists bottom Top layer is main metal level, and thickness exists
    (3) to the above-mentioned p-type semiconductor with organic elastic material film and metal composite layer on heating platform or in baking oven Structure carries out thermal induction, and the roughening structure of shear-face angle consecutive variations, thermal induction temperature are formed in organic elastic material film 80 DEG C~500 DEG C;
    (4) metal composite layer is removed by dry or wet etch;
    (5) the shear-face angle consecutive variations roughening structure formed in organic elastic material film is transferred to by p by dry etching In type semi-conducting material;
    If the roughening translucent construction makes by the following method on the passivation layer of p-type semiconductor structure:
    A, one layer of passivation layer is made in LED chip p-type semiconductor structure;
    B, organic elastic material membrane, organic elastic material film thickness are coated over the passivation layer
    C, sputtering or evaporation metal composite bed on elastic organic material film, to stick metal, thickness exists bottom Top layer is main metal level, and thickness exists
    D, thermal induction is carried out to said structure on heating platform or in baking oven, section angle is formed in organic elastic material film Spend consecutive variations roughening structure, 80 DEG C~500 DEG C of thermal induction temperature;
    E, metal composite layer is removed by dry or wet etch;
    F, the shear-face angle consecutive variations roughening structure formed in organic elastic material film is transferred to by dry etching blunt Change in layer;
    If the roughening translucent construction makes by the following method in the transparency electrode of p-type semiconductor structure:
    A, layer of transparent electrode is made in LED chip p-type semiconductor structure;
    B, organic elastic material membrane, organic elastic material film thickness are coated on the transparent electrodes
    C, sputtering or evaporation metal composite bed on organic elastic material film, to stick metal, thickness exists bottom Top layer is main metal level, and thickness exists
    D, thermal induction is carried out to said structure on heating platform or in baking oven, section angle is formed in organic elastic material film Spend consecutive variations roughening structure, 80 DEG C~500 DEG C of thermal induction temperature;
    E, metal composite layer is removed by dry or wet etch;
    F, the shear-face angle consecutive variations roughening structure formed in organic elastic material film is transferred to by dry etching In prescribed electrode;
    If the roughening translucent construction makes by the following method on the transparent organic layer of p-type semiconductor structure:
    A, transparent organic elastic material film, film thickness are coated in LED chip p-type semiconductor structure
    B, sputtering or evaporation metal composite bed on transparent organic elastic material film, to stick metal, thickness exists bottom Top layer is main metal level, and thickness exists
    C, thermal induction is carried out to said structure on heating platform or in baking oven, is formed and cut in transparent organic elastic material film The roughening structure of face angle degree consecutive variations, 80 DEG C~500 DEG C of thermal induction temperature;
    D, metal composite layer is removed by dry or wet etch;
    If described roughening translucent construction makes by the following method in n-type semiconductor structure:
    A, LED chip p-type semiconductor structure is bonded or is adhered on a solid structure, the substrate of chip is then passed through into machinery Thinned, wet etching, dry etching or laser-stripping method remove, and expose n-type semiconductor structure;
    B, organic elastic material membrane, organic elastic material film thickness are coated in LED chip n-type semiconductor structure
    C, sputtering or evaporation metal composite bed on organic elastic material film, to stick metal, thickness exists bottom Top layer is main metal level, and thickness exists
    D, to the above-mentioned n-type semiconductor knot with organic elastic material film and metal composite layer on heating platform or in baking oven Structure carries out thermal induction, and the roughening structure of shear-face angle consecutive variations, thermal induction temperature 80 are formed in organic elastic material film DEG C~500 DEG C;
    E, metal composite layer is removed by dry or wet etch;
    F, the shear-face angle consecutive variations roughening structure formed in organic elastic material film is transferred to by n-type by dry etching In semiconductor structure materials;
    If described roughening translucent construction makes by the following method on the substrate of chip:
    A, organic elastic material membrane, organic elastic material film thickness are coated on the substrate of LED chip
    B, sputtering or evaporation metal composite bed on organic elastic material film, to stick metal, thickness exists bottom Top layer is main metal level, and thickness exists
    C, the above-mentioned chip substrate with organic elastic material film and metal composite layer is entered on heating platform or in baking oven Row thermal induction, the roughening structure of formation shear-face angle consecutive variations in organic elastic material film, 80 DEG C of thermal induction temperature~ 500℃;
    D, metal composite layer is removed by dry or wet etch;
    E, the shear-face angle consecutive variations roughening structure formed in organic elastic material film is transferred to by core by dry etching In piece backing material.
  2. 2. a kind of preparation method of LED chip with surface roughening translucent construction according to claim 1, its feature exist In:Described organic elastic material is photoresist or polyimides;Described transparent organic elastic material selects SU-8, asphalt mixtures modified by epoxy resin Fat, makrolon, polymethyl methacrylate or silica gel.
  3. 3. a kind of preparation method of LED chip with surface roughening translucent construction according to claim 1, its feature exist In:Described passivation material is silica, titanium oxide, silicon or silicon nitride medium material, passivation layer thickness
  4. 4. a kind of preparation method of LED chip with surface roughening translucent construction according to claim 1, its feature exist In:Described sticks metal selection Ti, In, Zn or Cr;Described main metal selection Al, Ti, Cr, Zn, Ni, W, Mo or Au gold Category.
  5. 5. a kind of preparation method of LED chip with surface roughening translucent construction according to claim 1, its feature exist In:Described electrode material is ITO or ZnO electrode material, transparency electrode thickness
  6. 6. a kind of preparation method of LED chip with surface roughening translucent construction according to claim 1, its feature exist In:Described dry etching selection ICP etchings or plasma etching or RIE etchings, dry etch process parameter are as follows:
    ICP power=1800W, RF power=300W, chamber pressure=50mtorr, Cl2Flow=30sccm, Ar flows=15sccm, BCl3Flow=50sccm;
    Plasma etch process condition:
    ICP power=1400W, RF power=150W, chamber pressure=80mtorr, Cl2Flow=50sccm, Ar flows=10sccm, BCl3Flow=20sccm;
    Or ICP power=1000W, RF power=200W, chamber pressure=100mtorr, Cl2Flow=60sccm, Ar flows= 25sccm, BCl3Flow=20sccm;
    RIE etch technological conditions are as follows:
    RF power=100W, chamber pressure=30mtorr, CHF3Flow=25sccm, Ar flows=25sccm;
    Or RF power=150W, chamber pressure=30mtorr, CHF3Flow=25sccm, Ar flows=15sccm, O2Flow= 5sccm。
  7. 7. a kind of preparation method of LED chip with surface roughening translucent construction according to claim 1, its feature exist In:In described wet etching, Au layers etching liquid selection KI:I2:H2O solution, Ti layers etching liquid selection HCl:H2O solution, Al layers Etching liquid selects H3PO4:H2O or HCl:H2O solution;Wherein, KI:I2:H2O=(65~100) g:(25~50) g:300ml;HCl And H2O volume ratio is (1:0)~(1:3);H3PO4And H2O volume ratio is (1:0)~(1:3), wherein, hydrochloric acid HCl matter It is 37% to measure percent concentration, phosphoric acid H3PO4Mass percent concentration be 84%.
  8. 8. a kind of preparation method of LED chip with surface roughening translucent construction according to claim 1, its feature exist In:The Cycle Length of described roughening translucent construction goes out more than 2 times of optical wavelength in LED component, and roughening translucent construction Cycle is less than 10 with Amplitude Ratio.
CN201510189107.XA 2015-04-21 2015-04-21 A kind of LED chip with surface roughening translucent construction and preparation method thereof CN104851947B (en)

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