CN105914281A - Light-emitting element having a reflective structure with high efficiency - Google Patents
Light-emitting element having a reflective structure with high efficiency Download PDFInfo
- Publication number
- CN105914281A CN105914281A CN201610081356.1A CN201610081356A CN105914281A CN 105914281 A CN105914281 A CN 105914281A CN 201610081356 A CN201610081356 A CN 201610081356A CN 105914281 A CN105914281 A CN 105914281A
- Authority
- CN
- China
- Prior art keywords
- layer
- light
- emitting component
- clear
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Abstract
A light-emitting device comprises a reflective layer; a first transparent layer on the reflective layer; a light-emitting stack comprising an active layer on the first transparent layer; and a cavity in the first transparent layer.
Description
Technical field
The present invention relates to a kind of light-emitting component, particularly relate to a kind of light-emitting component with high efficiency catoptric arrangement.
Background technology
Photoelectric cell, such as light emitting diode (Light-emitting Diode；LED), it has been widely used
On optical display, traffic sign, data storage device, communication device, illuminator and medical device.Additionally, it is above-mentioned
LED can with other elements combination be connected to form a light-emitting device.Fig. 1 is existing luminous device structure schematic diagram, such as Fig. 1
Shown in, a light-emitting device 1 comprises a secondary carrier (submount) 12 with a circuit 14；One solder 16 (solder) is positioned at
State on time carrier 12, circuit LED 11 being fixed on time carrier 12 and make on LED 11 and time carrier 12 by this solder 16
14 form electrical connection；And an electric connection structure 18, to electrically connect electrode 15 and the circuit 14 on time carrier 12 of LED 11；Its
In, above-mentioned secondary carrier 12 can be lead frame (lead frame) or large scale inlays substrate (mounting
substrate)。
Summary of the invention
The present invention provides a kind of light-emitting component, comprising: a reflecting layer；One the first clear layer being positioned on reflecting layer, its
Comprise a protuberance；The one luminous lamination being positioned on the first clear layer and comprising an active layer；And multiple hole is positioned at first
In clear layer, wherein protuberance by multiple holes around.
The present invention also provides for the manufacture method of a kind of light-emitting component, and it includes step: providing a luminous lamination, it comprises one
Second semiconductor layer, one it is positioned at the active layer on the second semiconductor layer and and is positioned at the first semiconductor layer of active layer；In
One first clear layer is formed in semi-conductor layer；And etching the first clear layer is to form multiple holes and by multiple holes
Around protuberance.
Accompanying drawing explanation
Fig. 1 is existing luminous device structure schematic diagram；
Fig. 2 is the generalized section of the light-emitting component of case one embodiment of the present invention；
Fig. 3 is the generalized section of the light-emitting component of another embodiment of case of the present invention；
Fig. 4 is the second euphotic material deposition direction schematic diagram of the embodiment of Fig. 3；
Fig. 5 is the generalized section of the light-emitting component of another embodiment of case of the present invention；
Fig. 6 is the bulb decomposing schematic representation of case one embodiment of the present invention；
Fig. 7 A to Fig. 7 G is the manufacture method of the light-emitting component of another embodiment of case of the present invention；
Fig. 8 A to Fig. 8 E is the manufacture method of the light-emitting component of another embodiment of case of the present invention, and Fig. 8 E illustrates light-emitting component edge
The generalized section of DD hatching as seen in fig. 8f；
Fig. 8 F is the top view of light-emitting component；
Fig. 9 A to Fig. 9 E is light-emitting component and the manufacture method thereof of another embodiment of case of the present invention, and Fig. 9 E is light-emitting component edge
The generalized section of HIJK hatching as shown in fig. 9f；And
Fig. 9 F is the top view of light-emitting component.
Symbol description
1: light-emitting device 11:LED
12: secondary carrier 13,20,50: substrate
14: circuit 15,56: electrode
16: solder 18: electric connection structure
2,3,40,5: light-emitting component 21: the first electrode
22: tack coat 23: the second electrode
24,54: catoptric arrangement 241,543: protuberance
242,544: reflecting layer 243,545: recess
244,542: the first photic zone 245,30,547: hole
246: the second photic zone 247: the first lower surfaces
248,540: window layers 26: luminous lamination
261,541: roughening upper surface 262,522: the first semiconductor layer
263: roughening lower surface 264,524: active layer
265: par 266,526: the second semiconductor layer
32: conductive part 41: lampshade
42: lens 43: carrier
44: lighting module 45: lamp socket
46: radiating groove 47: linking part
48: electric connector 51: the first contact layer
53: the second contact layer 546: the first insulating barriers
548: the three photic zones 549: passage
562: the first conductive layer 564: the second conductive layers
H: highly t: thickness
701: growth substrate 90E2: second electronic pads
76: luminous lamination 762: the first semiconductor layer
764: active layer 766: the second semiconductor layer
744: the first clear layer 746: the second clear layers
745: hole 745b: crystal boundary
745w: Part I 745n: Part II
744c: protuberance 744cB1: base body
744cB2: top matrix 745a: basal surface
742: reflecting layer the 72a: the first tack coat
70: substrate the 72b: the second tack coat
72: adhesion coating the 70E1: the first electronic pads
70E1 ': extension electrode the 70E2: the second electronic pads
70R: coarse surface 77: protective layer
80: substrate 86: luminous lamination
862: the first semiconductor layers 864: active layer
866: the second semiconductor layer 86E, 86E ': exposed region
D1: the first dielectric layer 844: the first clear layer
846: the second clear layers 845: hole
844c: protuberance 842: reflecting layer
D2: the second dielectric layer D2E, D2E ': exposed region
M1: conductive layer the D3: the three dielectric layer
M2E: region the 80E1: the first electronic pads
80E2: the second electronic pads 90: substrate
96: luminous lamination 962: the first semiconductor layer
964: active layer 966: the second semiconductor layer
96E, 96E ': exposed region 90CB: current barrier layer
944: the first clear layer 946: the second clear layers
945: hole 944c: protuberance
MF1, MF1E: intermediate conductive layer MF1 ', MF1 ' E: intermediate conductive layer
96E: exposed region 942: reflecting layer
942: Bragg mirror structure 942E: exposed region
M2E: region the 90E1: the first electronic pads
W1、W2、W3、W4: width
Detailed description of the invention
For the features described above of the present invention and advantage can be become apparent, special embodiment below, and coordinate appended accompanying drawing
It is described in detail below.In accompanying drawing or explanation, the label that similar or identical part use is identical, and in the accompanying drawings, unit
The shape of part or thickness can expand or shrink.Need it is specifically intended that the element that do not illustrates in figure or describe, can be to be familiar with this
Form known to the personage of technology.
Fig. 2 is the sectional view of the light-emitting component of case one embodiment of the present invention.As in figure 2 it is shown, a light-emitting component 2 has a base
Plate 20；One tack coat 22, is positioned on substrate 20；One catoptric arrangement 24, is positioned on tack coat 22；One luminous lamination 26, position
On catoptric arrangement 24；One first electrode 21, is positioned under substrate 20；And one second electrode 23, it is positioned at luminous lamination 26
On.Luminous lamination 26 has one first semiconductor layer 262, is positioned on catoptric arrangement 24；One active layer 264, is positioned at first
On semiconductor layer 262；And one second semiconductor layer 266, it is positioned on active layer 264.
First electrode 21 and/or the second electrode 23, can be by transparent conductive material or metal materials in order to accept external voltage
Constituted.Transparent conductive material is including but not limited to tin indium oxide (ITO), Indium sesquioxide. (InO), stannum oxide (SnO), cadmium tin
(CTO), antimony tin (ATO), aluminum zinc oxide (AZO), zinc-tin oxide (ZTO), gallium oxide zinc (GZO), zinc oxide (ZnO), phosphorus
Change gallium (GaP), indium zinc oxide (IZO), diamond-like carbon film (DLC), indium gallium (IGO), gallium oxide aluminum zinc (GAZO) or above-mentioned
The compound of material.Metal material is including but not limited to aluminum (Al), chromium (Cr), copper (Cu), stannum (Sn), gold (Au), nickel (Ni), titanium
(Ti), platinum (Pt), lead (Pb), zinc (Zn), cadmium (Cd), antimony (Sb), cobalt (Co) or the alloy etc. of above-mentioned material.
Luminous lamination 26 has roughening upper surface 261 and a roughening lower surface 263, it is possible to decrease the probability of total reflection, carries
High light-emitting efficiency.Roughening upper surface has a par 265, and the second electrode 23 can be located on par 265, promotes the second electricity
Cohesiveness between pole 23 and luminous lamination 26, reduces the second electrode 23 because of subsequent manufacturing processes, such as routing, and self-luminous is folded
The probability peeled off on layer 26.The material of luminous lamination 26 can be semi-conducting material, comprises more than one element, and this element is optional
The group constituted with selenium (Se) from gallium (Ga), aluminum (Al), indium (In), phosphorus (P), nitrogen (N), zinc (Zn), cadmium (Cd).The first half lead
Body layer 262 is the most different with the second semiconductor layer 266, in order to produce electronics or hole.Active layer 124 can send one or many
Kind of coloured light, can be visible ray or black light, and its structure can be single heterojunction structure, double-heterostructure, bilateral double-heterostructure, many
Layer SQW or quantum dot.
Catoptric arrangement 24 self-adhesive layer 22 has reflecting layer 242,1 first photic zone 244 toward the direction of luminous lamination 26
With a window layers 248.Window layers 248 has a roughening lower surface, and roughening lower surface has multiple protuberance 241 and recess 243.Its
In, roughening lower surface has more a flat part in the underface of the second electrode 23, in order to form ohm with the first photic zone 244
Contact.At least one hole 245 is formed among the first photic zone 244, hole 245 can from the roughening following table of window layers 248 towards
Under extend to reflecting layer 242.In another embodiment, hole 245 can extend downward reflecting layer 242 from protuberance 241.Wherein, hole
The refractive index in hole 245 is less than window layers 248 and the refractive index of the first photic zone 244.Owing to the refractive index of hole 245 is less than window
Layer 248 and the refractive index of the first photic zone 244, its critical angle of the interface between window layers 248 and hole 245 is less than window layers 248
And the critical angle at the interface between the first photic zone 244, so after luminous lamination 26 issued light directive hole 245, in window layers
Interface between 248 and hole 245 forms the probability of total reflection and increases.Additionally, originally at window layers 248 and the first photic zone
244 interfaces do not form total reflection and enter the light of the first photic zone 244, the interface between the first photic zone 244 and hole 245
Also can form total reflection, thus promote the light extraction efficiency of light-emitting component 2.What hole 245 was seen by sectional view can be wide at the top and narrow at the bottom
Funnel-form.Catoptric arrangement 24 can also comprise one second photic zone 246, and the second photic zone 246 is positioned at part the first photic zone 244
And between window layers 248, to increase the Ohmic contact between the first photic zone 244 and window layers 248.In another embodiment, the
Two photic zones 246 can have hole 245, and the refractive index of its Hole 245 is less than window layers 248 and the folding of the second photic zone 246
Penetrate rate.Owing to the refractive index of hole 245 is less than window layers 248 and the refractive index of the second photic zone 246, the second photic zone 246 and
The critical angle at the interface between hole 245 is less than the critical angle at the interface between window layers 248 and the second photic zone 246, thus luminous
After lamination 26 issued light directive hole 245, the interface between the second photic zone 246 and hole 245 forms the machine of total reflection
Rate increases.In another embodiment, catoptric arrangement 24 can not have window layers 248, and the first photic zone 244 is formed at luminous lamination 26
Under.Now, the roughening lower surface 263 of luminous lamination 26 has multiple protuberance and recess, the beneficially formation of hole 245.
Window layers 248 is transparent for luminous lamination 26 issued light, and in order to improving extraction efficiency, its material can be conduction
Material, including but not limited to tin indium oxide (ITO), Indium sesquioxide. (InO), stannum oxide (SnO), cadmium tin (CTO), antimony tin
(ATO), aluminum zinc oxide (AZO), zinc-tin oxide (ZTO), gallium oxide zinc (GZO), zinc oxide (ZnO), gallium phosphide (GaP), oxidation
Indium cerium (ICO), Indium sesquioxide. tungsten (IWO), Indium sesquioxide. titanium (ITiO), indium zinc oxide (IZO), indium gallium (IGO), gallium oxide aluminum zinc
Or the combination of above-mentioned material (GAZO).Difference in height h between recess 243 and the protuberance 241 of roughening lower surface is about window thickness
The 1/3 to 2/3 of degree t, the beneficially formation of hole 245.
The material of the first photic zone 244 and/or the second photic zone 246 is transparent for luminous lamination 26 issued light, with
Increase the Ohmic contact between window layers 248 and reflecting layer 242 and electric current conduction and diffusion, and formed entirely with reflecting layer 242
Orientation reflecting mirror (Omni-Directional Reflector, ODR).Its material can be transparent conductive material, comprises but does not limits
In tin indium oxide (ITO), Indium sesquioxide. (InO), stannum oxide (SnO), cadmium tin (CTO), antimony tin (ATO), aluminum zinc oxide
(AZO), zinc-tin oxide (ZTO), gallium oxide zinc (GZO), zinc oxide (ZnO), gallium phosphide (GaP), Indium sesquioxide. cerium (ICO), oxidation
Indium tungsten (IWO), Indium sesquioxide. titanium (ITiO), indium zinc oxide (IZO), indium gallium (IGO), gallium oxide aluminum zinc (GAZO) or above-mentioned material
The combination of material.Wherein the material of the first photic zone 244 is preferably aluminum zinc oxide (AZO), zinc-tin oxide (ZTO), gallium oxide zinc
(GZO), zinc oxide (ZnO), indium zinc oxide (IZO) or the combination of above-mentioned material.Form the first photic zone 244 and/or second saturating
The method of photosphere 246 comprises physical vaporous deposition, such as electron beam evaporation plating or sputter.Self-luminous can be reflected in reflecting layer 242
The light of lamination 26, its material can be metal material, including but not limited to copper (Cu), aluminum (Al), stannum (Sn), gold (Au), silver (Ag),
Lead (Pb), titanium (Ti), nickel (Ni), platinum (Pt), tungsten (W) or the alloy etc. of above-mentioned material.
Tack coat 22 can connect substrate 20 and catoptric arrangement 24, can have multiple subordinate layer (not shown).Tack coat 22
Material can be transparent conductive material or metal material, and transparent conductive material is including but not limited to tin indium oxide (ITO), Indium sesquioxide.
(InO), stannum oxide (SnO), cadmium tin (CTO), antimony tin (ATO), aluminum zinc oxide (AZO), zinc-tin oxide (ZTO), oxygen
Change gallium zinc (GZO), zinc oxide (ZnO), gallium phosphide (GaP), Indium sesquioxide. cerium (ICO), Indium sesquioxide. tungsten (IWO), Indium sesquioxide. titanium
(ITiO), indium zinc oxide (IZO), indium gallium (IGO), gallium oxide aluminum zinc (GAZO) or the combination of above-mentioned material.Metal material
Including but not limited to copper (Cu), aluminum (Al), stannum (Sn), gold (Au), silver (Ag), lead (Pb), titanium (Ti), nickel (Ni), platinum (Pt), tungsten
Or the alloy etc. of above-mentioned material (W).
Substrate 20 may be used to support and is positioned at luminous lamination 26 thereon and other layer or structure, and its material can be transparent material
Or conductive material.Transparent material is including but not limited to sapphire (Sapphire), diamond (Diamond), glass (Glass), ring
Epoxy resins (Epoxy), quartz (Quartz), acryl (Acryl), aluminium oxide (Al2O3), zinc oxide (ZnO) or aluminium nitride
(AlN) etc..Conductive material including but not limited to copper (Cu), aluminum (Al), molybdenum (Mo), stannum (Sn), zinc (Zn), cadmium (Cd), nickel (Ni),
Cobalt (Co), diamond-like carbon film (Diamond Like Carbon；DLC), graphite (Graphite), carbon fiber (Carbon
Fiber), metal-base composites (Metal Matrix Composite；MMC), ceramic matric composite (Ceramic
Matrix Composite；CMC), silicon (Si), Echothiopate Iodide (IP), zinc selenide (ZnSe), GaAs (GaAs), carborundum
(SiC), gallium phosphide (GaP), gallium arsenide phosphide (GaAsP), zinc selenide (ZnSe), indium phosphide (InP), lithium gallium oxide (LiGaO2) or aluminum
Acid lithium (LiAlO2)。
Fig. 3 is the sectional view of the light-emitting component of another embodiment of case of the present invention.One light-emitting component 3 has above-mentioned light-emitting component
2 similar structures, but the second photic zone 246 of catoptric arrangement 24 has multiple hole 30, so that the refraction of the second photic zone 246
Rate is less than 1.4, preferably 1.35.As shown in Figure 4, the formation of hole 30 is to be fixed by wafer 4, in a certain direction, such as with
It is perpendicular to the direction D of the normal angle θ of wafer, deposits the material of the second photic zone 246 on wafer with physical vapor method.Because
The adjustment of deposition direction D makes material cannot deposit to subregion and form hole 30.Wherein, angle theta is about 60 degree.Hole
The most pertusate euphotic refractive index of refractive index of 30 the second photic zones 246 formed is low, can increase by the second photic zone
The probability producing total reflection between 246 and other bed boundarys, promotes the light extraction efficiency of light-emitting component 3.First photic zone 244 can be used
Physical vapor method or chemical gas-phase method are formed under the second photic zone 246, and its thickness is more than the thickness of the second photic zone 246,
The material that can prevent reflecting layer 242 diffuses to the second photic zone 246.First photic zone 244 does not have hole, can avoid reflecting layer
The material of 242 diffuses among hole, destroys the structure in reflecting layer 242, causes the reflectance reduction in reflecting layer 242.First is saturating
Photosphere 244 has one first lower surface 247, and the first lower surface 247 can use chemical mechanical milling method (Chemical
Mechanical Polishing, CMP) grind so that it is center line average roughness (Ra) is about 1nm～40nm.Work as reflecting layer
242 when being formed under the first lower surface 247, and reflecting layer 242 can form the surface that a center line average roughness is relatively low, thus
Improve the reflectance in reflecting layer 242.
Light-emitting component 3 also has at least one conductive part 32 between luminous lamination 26 and reflecting layer 242.Another embodiment
In, conductive part 32 can be located between window layers 248 and reflecting layer 242.Conductive part 32 is in order to conduct electric current, and its material can be transparent
Conductive material or metal material, transparent conductive material is including but not limited to tin indium oxide (ITO), Indium sesquioxide. (InO), stannum oxide
(SnO), cadmium tin (CTO), antimony tin (ATO), aluminum zinc oxide (AZO), zinc-tin oxide (ZTO), gallium oxide zinc (GZO),
Zinc oxide (ZnO), gallium phosphide (GaP), Indium sesquioxide. cerium (ICO), Indium sesquioxide. tungsten (IWO), Indium sesquioxide. titanium (ITiO), indium zinc oxide
(IZO), indium gallium (IGO), gallium oxide aluminum zinc (GAZO) or the combination of above-mentioned material.Metal material is including but not limited to copper
(Cu), aluminum (Al), stannum (Sn), gold (Au), silver (Ag), lead (Pb), titanium (Ti), nickel (Ni), platinum (Pt), tungsten (W), germanium (Ge) or on
State the alloy etc. of material.
In this embodiment, the material of the first photic zone 244 and/or the second photic zone 246 can be insulant, the most poly-
Sub-amide (PI), benzocyclobutene (BCB), cross fluorine Tetramethylene. (PFCB), magnesium oxide (MgO), Su8, epoxy resin (Epoxy),
Acrylic resin (Acrylic Resin), cyclic olefin polymer (COC), polymethyl methacrylate (PMMA), poly-terephthaldehyde
Acid second diester (PET), Merlon (PC), Polyetherimide (Polyetherimide), fluorocarbon polymer (Fluorocarbon
Polymer), glass (Glass), aluminium oxide (Al2O3), silicon oxide (SiOx), titanium oxide (TiO2), tantalum oxide (Ta2O5), nitridation
Silicon (SiNx), Afluon (Asta) (MgF2), spin-coating glass (SOG) or tetraethoxysilane (TEOS).
Fig. 5 is the sectional view of the light-emitting component of another embodiment of case of the present invention.As it is shown in figure 5, a light-emitting component 5 has one
Substrate 50；One luminous lamination 52, is positioned on substrate 50；One catoptric arrangement 54, is positioned on luminous lamination 52；And an electrode
56, it is positioned on catoptric arrangement 54.Luminous lamination 52 has one first semiconductor layer 522, is positioned on substrate 50；One active layer
524, it is positioned on the first semiconductor layer 522；And one second semiconductor layer 526, it is positioned on active layer 524, wherein part
Second semiconductor layer 526 is removed with active layer 524 with exposed first semiconductor layer 522.
Catoptric arrangement 54 has a window layers 540, is positioned on luminous lamination 52；One first photic zone 542, is positioned at window
On layer 540；One reflecting layer 544, is positioned on the first photic zone 542；And one first insulating barrier 546, it is positioned at reflecting layer 544
On.Window layers 540 has a roughening upper surface 541, and roughening upper surface has multiple protuberance 543 and recess 545.At least one hole
Hole 547 is formed among the first photic zone 542, and is positioned on roughening upper surface 541, and the refractive index of hole 547 is less than window
Layer 540 and the refractive index of the first photic zone 542.In another embodiment, hole 547 can upwardly extend from recess 545.Due to hole
The refractive index of 547 is less than window layers 540 and the refractive index of the first photic zone 542, the interface between window layers 540 and hole 547
Critical angle less than the critical angle at interface between window layers 540 and the first photic zone 542, so luminous lamination 52 issued light is penetrated
After hole 547, the interface between window layers 540 and hole 547 forms the probability of total reflection and increases.Additionally, originally at window
Family layer 540 and the first photic zone 542 interface do not form total reflection and enter the light of the first photic zone 542, at the first photic zone 542
And the interface between hole 547 also can form total reflection, thus promotes the light extraction efficiency of light-emitting component 5, and hole 547 is by sectional view
Sight can be low wide and up narrow funnel-form of falling.Because luminous lamination 52 issued light is between window layers 540 and hole 547
Interface between interface and the first photic zone 542 and hole 547 forms the probability of total reflection and increases, reduce light arrive electrode 56 and
The probability absorbed by electrode 56, promotes the luminous efficiency of light-emitting component 5.First insulating barrier 546 can be coated with reflecting layer 544 so that anti-
Penetrate layer 544 directly not contact with electrode 56, it is to avoid the material in reflecting layer 544 diffuses to electrode 56, reduce the reflection in reflecting layer 544
Rate.Catoptric arrangement 54 also comprises multiple passage 549 and is formed among the first photic zone 542 and the first insulating barrier 546, and electrode 56 can
Via passage 549 and luminous lamination 52 electrical ties.Catoptric arrangement 54 can also comprise one second photic zone 548, the second photic zone 548
Between part the first photic zone 542 and reflecting layer 544, the second photic zone 548 does not have hole, can avoid reflecting layer 544
Material diffuse among hole, destroy reflecting layer 544 structure, cause the reflectance reduction in reflecting layer 544.
Electrode 56 has one first conductive layer 562 and one second conductive layer 564, and wherein the first conductive layer 562 is led with second
Electric layer 564 is not directly contacted with each other.First conductive layer 562 is connected with the first semiconductor layer 522 via passage 549, the second conduction
Layer 564 is connected with window layers 540 via passage 549.In another embodiment, light-emitting component 5 also comprises one first contact layer 51
Between the first conductive layer 562 and the first semiconductor layer 522, increase between the first conductive layer 562 and the first semiconductor layer 522
Ohmic contact；One second contact layer 53, between the second conductive layer 564 and window layers 540, increases by the second conductive layer 564 and window
Ohmic contact between family layer 540, reduces the operation voltage of light-emitting component 5, with raising efficiency.Wherein, the first contact layer 51 with
The material of the second contact layer 53 is identical with the material of above-mentioned electrode.
Fig. 6 is to show a bulb decomposing schematic representation, and a bulb 6 has a lampshade 61；One lens 62, be placed in lampshade 61 it
In；One lighting module 64, is positioned under lens 62；One lamp socket 65, has a radiating groove 66, in order to carry lighting module 64；One
Linking part 67；And an electric connector 68, wherein linking part 67 links lamp socket 65 and electric connector 68.Lighting module 66 has one
Carrier 63；And the light-emitting component 60 of multiple aforementioned any embodiment, it is positioned on carrier 63.
Fig. 7 A to Fig. 7 G is the manufacture method of the light-emitting component of another embodiment of case of the present invention.Refer to Fig. 7 A, this enforcement
The manufacture method of the light-emitting component of example includes providing a growth substrate 701 and forms one in growth substrate 701 luminous folded
Layer 76.Luminous lamination 76 sequentially comprises one first semiconductor layer 762, active layer 764 and one second semiconductor layer 766 in one-tenth
On long substrate 701.First semiconductor layer 762 and the second semiconductor layer 766 have different conductivity.Such as, the first half
Conductor layer 762 is p-type semiconductor layer, and the second semiconductor layer 766 is n-type semiconductor layer.First semiconductor layer 762, active layer 764
And second semiconductor layer 766 comprise III-V compound-material, such as AlgInhGa(1-g-h)P (0 g 1,0 h 1,0
g+h≦1).Then, on luminous lamination 76, one first clear layer 744 is formed.Before the first clear layer 744 is formed, Ke Yixuan
Form to selecting property one second clear layer 746.In an embodiment, the second clear layer 746 forms one ohm with luminous lamination 76 and connects
Touch.In another embodiment, the second clear layer 746 increase the adhesion strength between the first clear layer 744 and luminous lamination 76 or
It it is the ability of current spread.The light that the material of the first clear layer 744 and the second clear layer 746 can allow luminous lamination 76 send is worn
Thoroughly.The material of the first clear layer 744 and the second clear layer 746 comprises a transparent conductive material, and transparent conductive material comprises, but
It is not limited to, tin indium oxide (ITO), Indium sesquioxide. (InO), stannum oxide (SnO), cadmium tin (CTO), antimony tin (ATO), oxidation
Aluminum zinc (AZO), zinc-tin oxide (ZTO), gallium oxide zinc (GZO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium
(IGO), zinc oxide codope gallium aluminum (GAZO) or its etc. combination.First clear layer 744 and the material of the second clear layer 746
Also can comprise gallium phosphide or class bores carbon (DLC).In the present embodiment, the first clear layer 744 comprises tin indium oxide (ITO), and second
Clear layer 746 comprises gallium phosphide (GaP).In another embodiment, the first clear layer 744 comprises one first transparent conductive oxide
Thing, the second clear layer 746 comprises second transparent conductive oxide being different from the first transparent conductive oxide.
Then, referring to Fig. 7 B, this method is also included in the first clear layer 744 and forms multiple hole 745.In this enforcement
In example, multiple holes 745 are to be formed by an etching mode.It is transparent along first that etching mode comprises such as use chemical solution
The tube core interface 745b etching of layer 744.Chemical solution comprises the solution of an acid, such as, comprise oxalic acid ((COOH)2·2H2O), salt
Acid (HCl) or sulphuric acid (H2And the mixing of Fluohydric acid. (HF) SO).According to the control of etching step, such as etching period or
Being the composition of etching solution, the section shape in hole 745 is essentially triangle or trapezoidal.One little perforate is formed at hole
Around the top of 745.In a wherein situation, the width W of the Part I 745w of the closer luminous lamination 76 in hole 7453Greatly
In hole 745 further away from the width W of Part II 745n of luminous lamination 764.In order to clearly show that, refer to the lower-left of Fig. 7 B
Figure, multiple holes 745 communicate each other.First clear layer 744 comprises multiple being virtually decoupled from each other but close-packed arrays
Protuberance 744c, and as shown in Figure 7 B, each protuberance 744c by multiple holes 745 around.Multiple holes 745 and multiple convex
Go out portion 744c and form a loose structure.Protuberance 744c is shaped as an inverted truncated cones or inverted pyramid.Each protrusion
It is inverted trapezoidal that the section shape of portion 744c is essentially one.Similarly, the section shape of protuberance 744c can be by controlling
The composition of etching step, such as etching period or etching solution and adjust.The enlarged drawing of the bottom right of Fig. 7 B is to understand
Bright protuberance 744c, as it can be seen, can learn from sectional view, the wherein width W of the base body 744cB1 of a protuberance 744c1Greatly
Width W in the top matrix 744cB2 of protuberance 744c21/3 times, be used for maintaining mechanical strength.In an embodiment, when convex
Go out the circular cone that portion 744c is truncation, and the section shape of protuberance 744c comprises the width W with base body 744cB11More than 1/
The width W of the top matrix 744cB2 of 3 times2Trapezoidal time, total floor space in multiple holes 745, that is, whole multiple holes
The gross area of the basal surface 745a of 745 is between 50% and 90% of the area of luminous lamination 76.It is to say, it is all
The multiple holes 745 projected area on luminous lamination 76 be a surface between luminous lamination 76 area 50% and
Between 90%.After etching step, it is possible to use chemical solution is rinsed out by deionized water from the first clear layer 744.In erosion
Carving the first clear layer 744 to be formed after multiple holes 745, this method is selectively included and carries out the first clear layer 744
Heat treatment is to reduce the sheet resistance of the first clear layer 744.
Then, referring to Fig. 7 C, this method is also included on the first clear layer 744 and forms a reflecting layer 742.Because hole
The perforate of 745 is enough little, and reflecting layer 742 will not be inserted in hole 745, therefore can leave space in hole 745.Reflecting layer 742 is wrapped
Metal-containing material, such as gold, silver or aluminum.In an embodiment, reflecting layer 742 comprises Bragg mirror (Distributed
Bragg Reflector) structure.Bragg mirror structure comprises multiple Bragg mirror group, and each of which Prague is anti-
Penetrate mirror group to be made up of a high refractive index layer and a low-index layer.Reflecting layer the 742, first clear layer 744 and/or second is transparent
Layer 746 is collectively forming an Omni-directional reflector (Omni-Directional Reflector (ODR).
Then, referring to Fig. 7 D, this method is also included on reflecting layer 742 formation one first tack coat 72a.Such as Fig. 7 E institute
Showing, this method also comprises offer one substrate 70, and forms one second tack coat 72b on substrate.Substrate 70 comprises a conduction
Substrate, such as silicon substrate.First tack coat 72a and the second tack coat 72b comprises gold (Au), indium (In), stannum (Sn), silver
(Ag), copper (Cu), nickel (Ni), bismuth (Bi) or its etc. alloy.Then, as shown in Figure 7 F, the first tack coat 72a and second bonding
Layer 72b combines and is collectively forming an adhesion coating 72.After combining, as shown in Figure 7 G, remove growth substrate 701.Then, second
An one first electronic pads 70E1 and extension electrode 70E1 ' is formed on semiconductor layer 766.Substrate 70 is formed one second electrode
Pad 70E2.Optionally the second semiconductor layer 766 is carried out be roughened processing technology to form a coarse surface 70R, be used for increasing
Add light extraction efficiency.Then, carry out lithographic fabrication process and etching process with remove luminous lamination 76 surrounding and
Exposed second clear layer 746.Overetch the second clear layer 746 that may be a little.Finally, a protective layer 77 covers coarse surface
The sidewall of 70R and luminous lamination 76 avoids the infringement caused in air with protection light-emitting component.In the present embodiment, in order to more
Good protection, protective layer 77 also covers multiple sidewalls of luminous lamination 76.
Fig. 7 G illustrates the generalized section of the light-emitting component of case of the present invention.Light-emitting component 7 sequentially comprises substrate 70, adhesion coating
72, reflecting layer the 742, first clear layer the 744, second clear layer 746 and luminous lamination 76.Luminous lamination 76 sequentially comprises first
Semiconductor layer 762, active layer 764 and there is second semiconductor layer 766 of coarse surface 70R.First electronic pads 70E1 and
Extension electrode 70E1 ' is on the second semiconductor layer 766.Second electronic pads 70E2 is on substrate 70.Protective layer 77 covers roughening table
Face 70R and the sidewall of luminous lamination 76.First clear layer 744 comprise by multiple holes 745 around protuberance 744c.Multiple
Hole 745 and multiple protuberance 744c form a loose structure.The light sent when luminous lamination 76 arrives the first clear layer 744
Time, by having the total reflection at the interface between hole 745 and the first clear layer 744 wherein of space, light can be by hole
745 reflections or scattering, thus increase the light extraction efficiency of light-emitting component 7.The narration in detail of each structure of light-emitting component 7 exists
Earlier figures 7A to Fig. 7 F describes in detail.
Fig. 8 A to Fig. 8 E is the manufacture method of the light-emitting component of another embodiment of case of the present invention.Fig. 8 F illustrates light-emitting component
Top view.Fig. 8 E illustrates the light-emitting component generalized section along DD hatching as seen in fig. 8f.As shown in Figure 8 A, this reality
The manufacture method of the light-emitting component executing example includes providing substrate 80, such as a sapphire substrate.The manufacture method of light-emitting component
Also it is included on substrate 80 the luminous lamination 86 of formation one.Luminous lamination 86 comprises semiconductor laminated, and it sequentially comprises one the first half
Conductor layer 862, one active layer 864 and one second semiconductor layer 866.First semiconductor layer 862 and the second semiconductor layer 866
There is different conductivity.Such as, the first semiconductor layer 862 is p-type semiconductor layer, and the second semiconductor layer 866 is partly led for N-shaped
Body layer.First semiconductor layer 862, active layer 864 and the second semiconductor layer 866 comprise III-V compound-material, such as
AlxInyGa(1-x-y)N (0 x 1,0 y 1,0 x+y 1).Then, carry out lithographic fabrication process and etching makes work
Skill is positioned at exposed region 86E, 86E to remove ' the first semiconductor layer 862 and active layer 864, for the second of exposed part
Semiconductor layer 866.Through overetch, the second semiconductor layer 866 of partial depth may be etched away.Then, as shown in Figure 8 B, one
One dielectric layer D1 is substantially formed multiple sidewalls of luminous lamination 86.Then, one first clear layer 844 essentially forms in
In semi-conductor layer 862.Before the first clear layer 844 is formed, one second clear layer 846 can be formed selectively.Yu Yi
In embodiment, the second clear layer 846 and the first semiconductor layer 862 form Ohmic contact.In another embodiment, the second clear layer
846 increase the adhesion strength between the first clear layer 844 and luminous lamination 86 or the ability of current spread.First clear layer
844 and second the material of clear layer 846 light that luminous lamination 86 can be allowed to send penetrate.First clear layer 844 and second is saturating
The material of bright layer 846 comprises a transparent conductive material, and transparent conductive material include, but are not limited to, tin indium oxide (ITO), oxidation
Indium (InO), stannum oxide (SnO), cadmium tin (CTO), antimony tin (ATO), aluminum zinc oxide (AZO), zinc-tin oxide (ZTO),
Gallium oxide zinc (GZO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium (IGO), zinc oxide codope gallium aluminum (GAZO)
Or its etc. combination.The material of the first clear layer 844 and the second clear layer 846 also can comprise gallium phosphide or class bores carbon (DLC).
In the present embodiment, the first clear layer 844 comprises tin indium oxide (ITO), and the second clear layer 846 comprises indium zinc oxide (IZO).In
In another embodiment, the first clear layer 844 comprises one first transparent conductive oxide, and the second clear layer 846 comprises one and is different from
Second transparent conductive oxide of the first transparent conductive oxide.
Then, referring to Fig. 8 C, this method is also included in the first clear layer 844 and forms multiple hole 845.Similarly,
First clear layer 844 comprises multiple protuberance 844c, and in order to understand explanation, wherein a protuberance 844c represents in the circle of bottom right
Enlarged drawing in.Protuberance 844c by multiple holes 845 around.Formed hole 845 and the method detailed of protuberance 844c and
Hole 845 is substantially identical with the content of aforesaid embodiment with the structure of protuberance 844c, does not repeats them here.Form hole
After 845, it is possible to use deionized water rinse the first clear layer 844.This method is selectively included the first clear layer 844
Carry out heat treatment to reduce the sheet resistance of the first clear layer 844.Then, the first clear layer 844 forms a reflecting layer 842.
Because the perforate in hole 845 is enough little, reflecting layer 842 will not be inserted in hole 845, therefore can leave space in hole 845.Yu Ben
In embodiment, reflecting layer 84 is also coated with the first clear layer 844 and sidewall of the second clear layer 846.Reflecting layer 842 comprises metal
Material, such as gold (Au), silver (Ag) or aluminum (Al).Reflecting layer the 842, first clear layer 844 and/or the second clear layer 846 are common
Form an Omni-directional reflector (Omni-Directional Reflector (ODR).
As in fig. 8d, this method is also contained on reflecting layer the 842, first dielectric layer D1 and luminous lamination 86 and forms one
Second dielectric layer D2.Remove and be positioned at exposed region D2E, D2E ' the second dielectric layer D2 with exposed second semiconductor layer 866 and
The reflecting layer 842 of part, the wherein substantially corresponding exposed region 86E of exposed region D2E.This method is also contained in the second dielectric layer
A conductive layer M1 is formed on D2 and the second semiconductor layer 866.Conductive layer M1 and the second semiconductor layer 866 contact.
Then, as illustrated in fig. 8e, this method be also contained on the second dielectric layer D2, conductive layer M1, reflecting layer 842 and
One the 3rd dielectric layer D3 is formed on two semiconductor layers 866.Remove the 3rd dielectric layer D3 being positioned essentially at exposed region D2E ' with
Exposed reflecting layer 842.This method is also contained on the 3rd dielectric layer D3, reflecting layer 842 and conductive layer M1 formation one second and leads
Electric layer, removes the second conductive layer being positioned essentially at region M2E the most again to form one first electronic pads 80E1 and one second
Electronic pads 80E2.First electronic pads 80E1 contact conductive layer M1, conductive layer M1 contacts the second semiconductor layer 866.In other words, conduction
Layer M1 is as a middle conductive material and is electrically connected to the first electronic pads 80E1 and the second semiconductor layer 866.One power supply supplies
Device is answered to provide an electric current to the second semiconductor layer 866 by the first electronic pads 80E1 and conductive layer M1.Second electronic pads 80E2
Contact reflecting layer 842.One power supply unit provides one by the second electronic pads 80E2, reflecting layer 842 and the first clear layer 844
Electric current is to the first semiconductor layer 862.
Fig. 9 A to Fig. 9 E illustrates light-emitting component and the manufacture method thereof of another embodiment of case of the present invention.Fig. 9 F illustrates luminous unit
The top view of part.Fig. 9 E illustrates the light-emitting component generalized section along HIJK hatching as shown in fig. 9f.Such as Fig. 9 A institute
Showing, the method manufacturing light-emitting component comprises offer one substrate 90, such as sapphire substrate.The method manufacturing light-emitting component also comprises
A luminous lamination 96 is formed on substrate 90.Luminous lamination 96 comprises semiconductor laminated, and it sequentially comprises one first semiconductor layer
962, active layer 964 and one second semiconductor layer 966.First semiconductor layer 962 and the second semiconductor layer 966 have not
Same conductivity.Such as, the first semiconductor layer 962 is p-type semiconductor layer, and the second semiconductor layer 966 is n-type semiconductor layer.
First semiconductor layer 962, active layer 964 and the second semiconductor layer 966 comprise III-V compound-material, such as
AlxInyGa(1-x-y)N (0 x 1,0 y 1,0 x+y 1).Then, carry out lithographic fabrication process and etching makes work
Skill is positioned at exposed region 96E, 96E to remove ' the first semiconductor layer 962 and active layer 964, for the second of exposed part
Semiconductor layer 966.Because exposed region 96E, 96E ' are through overetch, the second semiconductor layer 966 of partial depth may be etched away.
Then, as shown in Figure 9 B, a current barrier layer 90CB can be formed selectively.Current barrier layer 90CB comprises a dielectric material
To stop that electric current flows through.Then, one first clear layer 944 is formed on the first semiconductor layer 962 and current barrier layer 90CB.
Before the first clear layer 944 is formed, can be with selectively formed one second clear layer 946.In an embodiment, the second clear layer
946 and first semiconductor layer 962 form Ohmic contact.In another embodiment, the second clear layer 946 increases by the first clear layer
Adhesion strength between 944 and luminous lamination 96 or the ability of current spread.First clear layer 944 and the second clear layer
The light that the material of 946 can allow luminous lamination 96 send penetrates.The material of the first clear layer 944 and the second clear layer 946 comprises
One transparent conductive material, transparent conductive material include, but are not limited to, tin indium oxide (ITO), Indium sesquioxide. (InO), stannum oxide
(SnO), cadmium tin (CTO), antimony tin (ATO), aluminum zinc oxide (AZO), zinc-tin oxide (ZTO), gallium oxide zinc (GZO),
Zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium (IGO), zinc oxide codope gallium aluminum (GAZO) or its etc. combination.The
The material of one clear layer 944 and the second clear layer 946 also can comprise gallium phosphide or class bores carbon (DLC).In the present embodiment, the
One clear layer 944 comprises tin indium oxide (ITO), and the second clear layer 946 comprises indium zinc oxide (IZO).In another embodiment, the
One clear layer 944 comprises one first transparent conductive oxide, and the second clear layer 846 comprises one and is different from the first transparent conductive oxide
Second transparent conductive oxide of thing.
Then, as shown in Figure 9 C, this method forms multiple hole 945 in being also contained in the first clear layer 944.Similarly,
First clear layer 944 comprises multiple protuberance 944c, and in order to understand explanation, wherein a protuberance 944c represents in the circle of bottom right
Enlarged drawing in.Protuberance 944c by multiple holes 945 around.Formed hole 945 and the method detailed of protuberance 944c and
Hole 945 is substantially identical with the content of aforesaid embodiment with the structure of protuberance 944c, does not repeats them here.Merit attention
, in the present embodiment, hole 945 is also not formed at the region being positioned on current barrier layer 90CB of the first clear layer 944
In.After forming hole 945, it is possible to use deionized water rinse the first clear layer 944.This method is selectively included
One clear layer 944 carries out heat treatment to reduce the sheet resistance of the first clear layer 944.Then, by use lithographic fabrication process with
And etching process is formed with patterned conductive layer, it is used for forming intermediate conductive layer MF1, MF1E.Top view institute such as Fig. 9 F
Showing, intermediate conductive layer MF1E is the extension electrode extended from intermediate conductive layer MF1 generally circular in shape.Concurrently form and lead in the middle of one
Electric layer MF1 ', MF1 ' E (MF1 ' E is not illustrated in Fig. 9 C but is illustrated in Fig. 9 F), as shown in fig. 9f, intermediate conductive layer MF1 '
E is the extension electrode extended from intermediate conductive layer MF1 ' generally circular in shape.Intermediate conductive layer MF1, MF1E are formed at exposed area
Territory 96E and on the second semiconductor layer 966.Intermediate conductive layer MF1, MF1E contact the second semiconductor layer 966.Intermediate conductive layer
MF1 ', MF1 ' E is formed on the first clear layer 944 and contacts the first clear layer 944, wherein intermediate conductive layer MF1 be in as
On current barrier layer 90CB described in before, and there is not current barrier layer 90CB under intermediate conductive layer MF1 ' E.
Then, as shown in fig. 9d, this method also comprises formation one reflecting layer 942.Because the perforate in hole 945 is enough little, instead
Penetrate layer 942 and will not insert in hole 945, therefore space can be left in hole 945.In the present embodiment, form a Prague anti-
Penetrate the part that mirror (Distributed Bragg Reflector) structure 942 is exposed to be coated with aforementioned structure, and pass through optical graving
Make technique and etching process removes the Bragg mirror structure 942 being positioned at exposed region 942E.Exposed region 942E
It is substantially corresponding to intermediate conductive layer MF1, the position of MF1 '.Bragg mirror structure 942 comprises multiple Bragg mirror
Group, each of which Bragg mirror group is made up of a layer with high index of refraction and a layer with low-refraction.This reality
Executing in example, each Bragg mirror group is by one titania layer (Titanium Oxide, TiOx) and one silica layer
(Silicon Oxide, SiOx) formed.
Then, as shown in fig. 9e, this method is also contained in Bragg mirror structure 942 and forms a conductive layer, and
Remove the conductive layer being positioned essentially at region M2E to form one first electronic pads 90E1 and one second electronic pads 90E2.First
Electronic pads 90E1 contacts intermediate conductive layer MF1, intermediate conductive layer MF1 and contacts the second semiconductor layer 966.In other words, middle conduction
Layer MF1 is as a middle conductive media and electrically connects the first electronic pads 90E1 and the second semiconductor layer 966.In addition,
Intermediate conductive layer MF1E is as an extension electrode increasing current spread.One power supply unit by the first electronic pads 90E1 and
Intermediate conductive layer MF1, MF1E provide current to the second semiconductor layer 966.Second electronic pads 90E2 contacts intermediate conductive layer MF1 ',
And intermediate conductive layer MF1 ' contacts the first clear layer 944.First clear layer 944 is electrically connected to the first semiconductor layer 962.Except this it
Outward, as shown in fig. 9f, intermediate conductive layer MF1 ' E is as the extension electrode increasing current spread.One power supply unit passes through second
(and the second clear layer 946, if there being formation for electronic pads 90E2, intermediate conductive layer MF1 ', MF1 ' E and the first clear layer 944
Second clear layer 946) provide current to the first semiconductor layer 962.
Though corresponding specific embodiment only distinguished by the most each accompanying drawing with explanation, but, illustrated or exposure in each embodiment
Element, embodiment, design criteria and know-why except in aobvious conflict, contradiction mutually each other or in addition to being difficult to common implementing,
We when can according to needed for it arbitrarily with reference to, exchange, arrange in pairs or groups, coordinate or merge.
Although disclosure of the present invention is it is stated that as above, however the scope that it is not intended to limiting the invention, implement suitable
Sequence or use material and process for making.The various modifications made for present invention and change, neither take off the present invention
The spirit and scope of content.
Claims (10)
1. a light-emitting component, comprising:
Reflecting layer；
The first clear layer being positioned on this reflecting layer, it comprises a protuberance；
The luminous lamination being positioned on this first clear layer and comprise an active layer；And
Multiple holes, are positioned in this first clear layer, wherein this protuberance by the plurality of hole around.
2. light-emitting component as claimed in claim 1, wherein to be essentially one inverted trapezoidal for its section shape of this protuberance.
3. light-emitting component as claimed in claim 2, wherein this protuberance comprises a base body and and is positioned on this base body
Top matrix, a width of this base body is more than 1/3 times of a width of this top matrix.
4. light-emitting component as claimed in claim 1, one of them section shape of the most the plurality of hole is essentially triangle
Shape or trapezoidal.
5. light-emitting component as claimed in claim 4, the most the plurality of hole has a Part I and relatively this first
Dividing the Part II away from luminous lamination, a width of this Part I is more than a width of this Part II.
6. light-emitting component as claimed in claim 1, also comprises the second clear layer, is positioned at this first clear layer and this luminescence is folded
Between Ceng.
7. light-emitting component as claimed in claim 1, wherein this protuberance be shaped as an inverted truncated cones or inverted
Pyramid.
8. a manufacture method for light-emitting component, it includes step:
Thering is provided a luminous lamination, it comprises the second semiconductor layer, the active layer being positioned on this second semiconductor layer and is positioned at this
First semiconductor layer of active layer；
One first clear layer is formed on this first semiconductor layer；And
Etch this first clear layer with formed multiple holes and one by the plurality of hole around protuberance.
9. the manufacture method of light-emitting component as claimed in claim 8, after etching this first clear layer, also include to this
One clear layer carries out heat treatment.
10. the manufacture method of light-emitting component as claimed in claim 8, before forming this first clear layer, also includes etching
The active layer of the first semiconductor layer partly and part is with the second semiconductor layer of exposed part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110702888.3A CN113555486A (en) | 2015-02-19 | 2016-02-05 | Light-emitting element with high-efficiency reflection structure |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/626,075 US9691943B2 (en) | 2013-05-24 | 2015-02-19 | Light-emitting element having a reflective structure with high efficiency |
| US14/626,075 | 2015-02-19 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110702888.3A Division CN113555486A (en) | 2015-02-19 | 2016-02-05 | Light-emitting element with high-efficiency reflection structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105914281A true CN105914281A (en) | 2016-08-31 |
Family
ID=56744400
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610081356.1A Pending CN105914281A (en) | 2015-02-19 | 2016-02-05 | Light-emitting element having a reflective structure with high efficiency |
| CN202110702888.3A Pending CN113555486A (en) | 2015-02-19 | 2016-02-05 | Light-emitting element with high-efficiency reflection structure |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110702888.3A Pending CN113555486A (en) | 2015-02-19 | 2016-02-05 | Light-emitting element with high-efficiency reflection structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN105914281A (en) |
| TW (1) | TWI701847B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110998873A (en) * | 2017-06-29 | 2020-04-10 | 欧司朗Oled股份有限公司 | Semiconductor chip with transparent current spreading layer |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW202029534A (en) | 2019-01-23 | 2020-08-01 | 晶元光電股份有限公司 | Light-emitting element with distributed bragg reflector |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101826582A (en) * | 2009-03-02 | 2010-09-08 | Lg伊诺特有限公司 | Semiconductor light emitting device |
| CN102163653A (en) * | 2010-02-23 | 2011-08-24 | Lg伊诺特有限公司 | Light emitting device, light emitting device package, method of manufacturing light emitting device, and lighting system |
| CN102354721A (en) * | 2011-11-04 | 2012-02-15 | 祝进田 | Manufacturing method of LED (light-emitting diode) chip with inverted structure |
| CN102427107A (en) * | 2011-12-09 | 2012-04-25 | 祝进田 | High-power white light-emitting diode (LED) flip chip and manufacturing method thereof |
| KR20130006976A (en) * | 2011-06-28 | 2013-01-18 | (주)세미머티리얼즈 | Light emitting device, method for fabricating the same and substrate for light emitting device |
| CN102931324A (en) * | 2011-11-25 | 2013-02-13 | 俞国宏 | LED chip |
| CN103339729A (en) * | 2010-10-15 | 2013-10-02 | 克利公司 | High voltage wire bond free LEDs |
| CN103489983A (en) * | 2012-06-11 | 2014-01-01 | 铼钻科技股份有限公司 | Flip-chip light emitting diode and manufacturing method and application thereof |
| CN203521472U (en) * | 2013-09-05 | 2014-04-02 | 深圳市智讯达光电科技有限公司 | Welding electrode structure of flip-chip LED chip and flip-chip LED chip |
| CN104300055A (en) * | 2013-07-17 | 2015-01-21 | 晶元光电股份有限公司 | Light-emitting element |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8592847B2 (en) * | 2011-04-15 | 2013-11-26 | Epistar Corporation | Light-emitting device |
| TWI575776B (en) * | 2013-05-24 | 2017-03-21 | 晶元光電股份有限公司 | Light-emitting element having a reflective structure with high efficiency |
| TWI577045B (en) * | 2013-07-10 | 2017-04-01 | 晶元光電股份有限公司 | Light-emitting element |
-
2016
- 2016-01-27 TW TW105102586A patent/TWI701847B/en active
- 2016-02-05 CN CN201610081356.1A patent/CN105914281A/en active Pending
- 2016-02-05 CN CN202110702888.3A patent/CN113555486A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101826582A (en) * | 2009-03-02 | 2010-09-08 | Lg伊诺特有限公司 | Semiconductor light emitting device |
| CN102163653A (en) * | 2010-02-23 | 2011-08-24 | Lg伊诺特有限公司 | Light emitting device, light emitting device package, method of manufacturing light emitting device, and lighting system |
| CN103339729A (en) * | 2010-10-15 | 2013-10-02 | 克利公司 | High voltage wire bond free LEDs |
| KR20130006976A (en) * | 2011-06-28 | 2013-01-18 | (주)세미머티리얼즈 | Light emitting device, method for fabricating the same and substrate for light emitting device |
| CN102354721A (en) * | 2011-11-04 | 2012-02-15 | 祝进田 | Manufacturing method of LED (light-emitting diode) chip with inverted structure |
| CN102931324A (en) * | 2011-11-25 | 2013-02-13 | 俞国宏 | LED chip |
| CN102427107A (en) * | 2011-12-09 | 2012-04-25 | 祝进田 | High-power white light-emitting diode (LED) flip chip and manufacturing method thereof |
| CN103489983A (en) * | 2012-06-11 | 2014-01-01 | 铼钻科技股份有限公司 | Flip-chip light emitting diode and manufacturing method and application thereof |
| CN104300055A (en) * | 2013-07-17 | 2015-01-21 | 晶元光电股份有限公司 | Light-emitting element |
| CN203521472U (en) * | 2013-09-05 | 2014-04-02 | 深圳市智讯达光电科技有限公司 | Welding electrode structure of flip-chip LED chip and flip-chip LED chip |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110998873A (en) * | 2017-06-29 | 2020-04-10 | 欧司朗Oled股份有限公司 | Semiconductor chip with transparent current spreading layer |
| CN110998873B (en) * | 2017-06-29 | 2023-05-23 | 欧司朗Oled股份有限公司 | Semiconductor chip with transparent current spreading layer |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201705538A (en) | 2017-02-01 |
| CN113555486A (en) | 2021-10-26 |
| TWI701847B (en) | 2020-08-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102446949B (en) | There is the light-emitting component of multiple contact site | |
| US9660146B2 (en) | Light-emitting element | |
| US9153747B2 (en) | Light-emitting element | |
| TW201603319A (en) | Optoelectronic device and method for manufacturing the same | |
| CN104300055B (en) | Light-emitting component | |
| US10177290B2 (en) | Light-emitting device | |
| US10002991B2 (en) | Light-emitting element | |
| US10693039B2 (en) | Light-emitting element having a reflective structure with high efficiency | |
| CN103247732B (en) | The light-emitting component of current-diffusion layer with flat surface | |
| CN105914281A (en) | Light-emitting element having a reflective structure with high efficiency | |
| US9691943B2 (en) | Light-emitting element having a reflective structure with high efficiency | |
| CN104638084A (en) | Light-emitting element | |
| TWI754617B (en) | Light-emitting element | |
| CN104659176A (en) | Semiconductor light emitting element | |
| CN104282813A (en) | Light-emitting device | |
| CN104576870A (en) | Light-emitting component | |
| CN104218128A (en) | Light emitting element with efficient reflection structure | |
| TWI599070B (en) | A light-emitting element having a current-spreading layer with a flat surface | |
| TWI662720B (en) | Optoelectronic device and method for manufacturing the same | |
| CN105322066B (en) | Photoelectric element and manufacturing method thereof | |
| TWI632700B (en) | Light-emitting element having a reflective structure with high efficiency | |
| TW202327127A (en) | Optoelectronic device | |
| CN104779327A (en) | Photoelectric element and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160831 |