CN105810672A - Flip LED chip and preparation method thereof - Google Patents
Flip LED chip and preparation method thereof Download PDFInfo
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- CN105810672A CN105810672A CN201410835818.5A CN201410835818A CN105810672A CN 105810672 A CN105810672 A CN 105810672A CN 201410835818 A CN201410835818 A CN 201410835818A CN 105810672 A CN105810672 A CN 105810672A
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Abstract
The present invention provides a preparation method of a flip LED chip. The method comprises the step of orderly forming an N type GaN layer, a multiple-quantum-well layer, a P type GaN layer, a metal reflective layer, a metal protective layer and P and N electrode pads. According to the preparation method, the drilling technology is adopted, the current spreading technology is employed, and an equal-pad flip LED chip is prepared. The distance between the N electrode pad and the P electrode pad of the chip is large, a large process window is provided for downstream packaging process, the failure rate of a lamp bead caused by empty soldering in a packaging process is reduced, and thus the cost is saved.
Description
Technical field
The present invention relates to LED technology, particularly relate to Sapphire Substrate LED flip chip technology.
Background technology
Current high-power and high-luminance LED has become the emphasis of LED industry development, is widely used in indoor and outdoor lighting.Consider that traditional formal dress Sapphire Substrate high-power chip P-GaN layer electrical conductivity is not high, needing to deposit one layer of translucent Ni/Au conductive layer at P-type layer upper surface makes electric current more be uniformly distributed, this current-diffusion layer can absorb a part of light and reduce light efficiency, and sapphire thermal conductivity coefficient is low simultaneously, causes that chip thermal resistance is high.For overcoming above-mentioned deficiency, it is proposed that flip-chip.The light that such active area sends takes out through transparent Sapphire Substrate, eliminates the absorption to light of current-diffusion layer and electrode, and wherein downward part is reflected after layer reflects and upwards penetrates, and substantially increases light efficiency.Heat is directly transferred on substrate by electrode simultaneously, and heat conductivility is good.But the PN electrode pad of existing market main flow flip-chip is in different size, and the spacing between PNPad is smaller.When this chip package, in the process of eutectic welding, the requirement of technique is higher, otherwise easily cause lamp bead rosin joint and lost efficacy.It is thus desirable to provide a kind of new flip-chip and preparation technology to overcome the problems referred to above.
Summary of the invention
First to be solved by this invention technical problem is that: the preparation method providing a kind of flip LED chips, and the method technique is simple, it is easy to produce the Pad chip such as grade that spacing is bigger.
Second to be solved by this invention technical problem is that: provide a kind of flip LED chips, this LED chip is wait PadLED chip, and there is between N electrode pad and P electrode pad bigger spacing, reduce rosin joint in encapsulation process and cause the crash rate of lamp bead, thus having saved cost.
In order to solve proposed by the invention first technical problem, the preparation method that the present invention provides a kind of flip LED chips, the method includes: grow N-type GaN layer, multiple quantum well layer and P type GaN layer on a sapphire substrate from bottom to up successively；Described P type GaN layer is formed metallic reflector；Described metallic reflector deposits layer of metal protective layer；N electrode hole and N electrode groove is formed to exposing N-type GaN layer at described coat of metal surface portion region etch；Deposited n-type ohmic contact metal layer in described N electrode hole and N electrode groove；Sidewall at described coat of metal surface, N electrode hole and N electrode groove forms passivation layer, Etch Passivation subregion, exposes N-type ohmic contact metal layer and part metals protective layer；N electrode hole and N electrode groove are coupled together and forms N electrode pad；The coat of metal not being covered by a passivation layer is formed identical with N electrode pad size and axisymmetric P electrode pad.
Preferably, it is characterised in that the material of described pad is one of the following or multiple: Au, Al, Pt, Sn, Au-Sn alloy
In order to solve proposed by the invention second technical problem; the present invention provides a kind of flip LED chips; including Sapphire Substrate; described Sapphire Substrate is sequentially formed with N-type GaN layer, multiple quantum well layer, P type GaN layer, metallic reflector and coat of metal, is formed with N electrode hole and N electrode groove at described coat of metal surface portion region etch to exposing N-type GaN layer；In described N electrode hole and N electrode groove, deposition has N-type ohmic contact metal layer；Sidewall at described coat of metal surface, N electrode hole and N electrode groove is formed with passivation layer, Etch Passivation subregion, exposes N-type ohmic contact metal layer and part metals protective layer；N electrode hole and N electrode groove are coupled together and is formed with N electrode pad；The coat of metal not being covered by a passivation layer is formed identical with N electrode pad size and axisymmetric P electrode pad.
Preferably, the material of described pad is one of the following or multiple: Au, Al, Pt, Sn, Au-Sn alloy.
Beneficial effects of the present invention: compared with prior art, the preparation method of flip LED chips of the present invention is to have employed cheesing techniques, also uses current expansion technology simultaneously, the flip LED chips of electrode pad such as prepares.Between this N electrode of chip pad and P electrode pad, there is bigger spacing, provide bigger process window for downstream packaging technology, reduce rosin joint in encapsulation process and cause the crash rate of lamp bead, thus having saved cost.
Accompanying drawing explanation
Fig. 1-Fig. 7 is the schematic diagram of the manufacture process of the embodiment of the present invention one；
Fig. 8 is the embodiment of the present invention one flip LED chips top view.
Identifier declaration in figure:
1 is Sapphire Substrate, and 2 is N-type GaN layer, and 3 is multiple quantum well layer, and 4 is P type GaN layer; 5 is metallic reflector, and 6 is coat of metal, and 7 is N electrode hole, and 8 is N electrode groove; 9 is N-type ohmic contact metal layer, and 10 is passivation layer, and 11 is N electrode pad, and 12 is P electrode pad.
Detailed description of the invention
In conjunction with accompanying drawing, the present invention is described further by the examples below.
Embodiment one
As shown in Figures 1 to 7, the present invention provides the preparation process schematic diagram of a kind of flip LED chips.
As it is shown in figure 1, prepare InGaAlN multiple structure in Sapphire Substrate 1, sequentially consist of N-type GaN layer 2, multiple quantum well layer 3, P type GaN layer 4.As in figure 2 it is shown, use evaporation or sputtering technology to deposit the metallic reflector 5 of one layer of Ag-Ni-Al alloy on P type GaN layer 4 surface, deposit Au coat of metal 6 on this metallic reflector 5 surface.As it is shown on figure 3, use ICP dry etching to exposing N-type GaN layer 2 in Au coat of metal 6 surface portion region, forming N electrode hole 7 and N electrode groove 8, its top view is as shown in Figure 4.As it is shown in figure 5, Al or Pt that deposition height flushes with chip surface in N electrode hole 7 and N electrode groove 8 forms N-type ohmic contact metal layer 9, this N-type ohmic contact metal layer 9 is not covered with N electrode hole 7 and the sidewall of N electrode groove 8.As shown in Figure 6, the sidewall at Au coat of metal 6 surface, N electrode hole 7 and N electrode groove 8 forms passivation layer 10, and the material of passivation layer 10 can be silicon nitride, silicon oxide or silicon oxynitride.Etch Passivation 10 subregion, exposes part N-type ohmic contact metal layer 9 and Au coat of metal 6.As it is shown in fig. 7, deposit Au or AuSn alloy on the surface of passivation layer 10 as N electrode pad 11, N electrode hole 7 and N electrode groove 8 are coupled together.Depositing Au or AuSn alloy on passivation layer 10 is etched the coat of metal 6 exposed as P electrode pad 12, this P electrode pad 12 is identical with N electrode pad 11 size and axial symmetry, the Pad flip LED chips such as ultimately forms, and its top view is as shown in Figure 8.
The above; it is only the detailed description of the invention in the present invention; but protection scope of the present invention is not limited thereto, any people being familiar with this technology is in the technical scope that disclosed herein, the conversion that can readily occur in or replace all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claims.
Claims (4)
1. the preparation method of a flip LED chips, it is characterised in that the method includes:
Grow N-type GaN layer, multiple quantum well layer and P type GaN layer on a sapphire substrate from bottom to up successively；
Described P type GaN layer is formed metallic reflector；
Described metallic reflector deposits layer of metal protective layer；
N electrode hole and N electrode groove is formed to exposing N-type GaN layer at described coat of metal surface portion region etch；
Deposited n-type ohmic contact metal layer in described N electrode hole and N electrode groove；
Sidewall at described coat of metal surface, N electrode hole and N electrode groove forms passivation layer, Etch Passivation subregion, exposes N-type ohmic contact metal layer and part metals protective layer；
N electrode hole and N electrode groove are coupled together and forms N electrode pad；
The coat of metal not being covered by a passivation layer is formed identical with N electrode pad size and axisymmetric P electrode pad.
2. the preparation method of a kind of flip LED chips according to claim 1, it is characterised in that the material of described pad is one of the following or multiple: Au, Al, Pt, Sn, Au-Sn alloy.
3. a flip LED chips; including Sapphire Substrate; described Sapphire Substrate is sequentially formed with N-type GaN layer, multiple quantum well layer, P type GaN layer, metallic reflector and coat of metal; it is characterized in that, described flip LED chips is additionally included in described coat of metal surface portion region etch and forms N electrode hole and N electrode groove to exposing N-type GaN layer；In described N electrode hole and N electrode groove, deposition has N-type ohmic contact metal layer；Sidewall at described coat of metal surface, N electrode hole and N electrode groove is formed with passivation layer, Etch Passivation subregion, exposes N-type ohmic contact metal layer and part metals protective layer；N electrode hole and N electrode groove are coupled together and is formed with N electrode pad；The coat of metal not being covered by a passivation layer is formed identical with N electrode pad size and axisymmetric P electrode pad.
4. a kind of flip LED chips according to claim 3, it is characterised in that the material of described pad is one of the following or multiple: Au, Al, Pt, Sn, Au-Sn alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410835818.5A CN105810672A (en) | 2014-12-30 | 2014-12-30 | Flip LED chip and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410835818.5A CN105810672A (en) | 2014-12-30 | 2014-12-30 | Flip LED chip and preparation method thereof |
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| CN105810672A true CN105810672A (en) | 2016-07-27 |
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| CN201410835818.5A Pending CN105810672A (en) | 2014-12-30 | 2014-12-30 | Flip LED chip and preparation method thereof |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7335916B2 (en) * | 2003-10-27 | 2008-02-26 | Samsung Electro-Mechanics Co., Ltd. | Electrode structure, and semiconductor light-emitting device having the same |
| CN103119735A (en) * | 2010-09-24 | 2013-05-22 | 首尔半导体株式会社 | Wafer-level light emitting diode package and method of fabricating the same |
| CN103682004A (en) * | 2012-09-07 | 2014-03-26 | 晶能光电（江西）有限公司 | Light emitting diode flip chip for improving light-out rate and preparation method thereof |
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2014
- 2014-12-30 CN CN201410835818.5A patent/CN105810672A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7335916B2 (en) * | 2003-10-27 | 2008-02-26 | Samsung Electro-Mechanics Co., Ltd. | Electrode structure, and semiconductor light-emitting device having the same |
| CN103119735A (en) * | 2010-09-24 | 2013-05-22 | 首尔半导体株式会社 | Wafer-level light emitting diode package and method of fabricating the same |
| CN103682004A (en) * | 2012-09-07 | 2014-03-26 | 晶能光电（江西）有限公司 | Light emitting diode flip chip for improving light-out rate and preparation method thereof |
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Application publication date: 20160727 |