WO2009131335A3 - 반도체 발광소자 - Google Patents
반도체 발광소자 Download PDFInfo
- Publication number
- WO2009131335A3 WO2009131335A3 PCT/KR2009/001992 KR2009001992W WO2009131335A3 WO 2009131335 A3 WO2009131335 A3 WO 2009131335A3 KR 2009001992 W KR2009001992 W KR 2009001992W WO 2009131335 A3 WO2009131335 A3 WO 2009131335A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- emitting device
- semiconductor light
- semiconductor layer
- primary
- layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 8
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
실시 예는 반도체 발광소자에 관한 것이다. 실시 예에 따른 반도체 발광소자는 제1도전형 반도체층; 상기 제1도전형 반도체층 아래에 활성층; 상기 활성층 아래에 제2도전형 반도체층; 상기 제2도전형 반도체층의 아래에 제2전극층; 상기 제2전극층의 일측 위에 절연막; 및 상기 절연막 위에 상기 제1도전형 반도체층의 일단에 전기적으로 연결된 제1전극을 포함한다.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009801138976A CN102017195A (zh) | 2008-04-24 | 2009-04-16 | 半导体发光器件 |
JP2011506185A JP2011519161A (ja) | 2008-04-24 | 2009-04-16 | 半導体発光素子 |
EP09734742A EP2262010A4 (en) | 2008-04-24 | 2009-04-16 | SEMICONDUCTOR ELECTROLUMINESCENT DEVICE |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080038117A KR100946523B1 (ko) | 2008-04-24 | 2008-04-24 | 반도체 발광소자 및 그 제조방법 |
KR10-2008-0038117 | 2008-04-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009131335A2 WO2009131335A2 (ko) | 2009-10-29 |
WO2009131335A3 true WO2009131335A3 (ko) | 2010-01-21 |
Family
ID=41214125
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2009/001992 WO2009131335A2 (ko) | 2008-04-24 | 2009-04-16 | 반도체 발광소자 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7973329B2 (ko) |
EP (2) | EP2262010A4 (ko) |
JP (1) | JP2011519161A (ko) |
KR (1) | KR100946523B1 (ko) |
CN (1) | CN102017195A (ko) |
DE (1) | DE202009018441U1 (ko) |
WO (1) | WO2009131335A2 (ko) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100946523B1 (ko) * | 2008-04-24 | 2010-03-11 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR101039999B1 (ko) * | 2010-02-08 | 2011-06-09 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR100986560B1 (ko) * | 2010-02-11 | 2010-10-07 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
KR101683583B1 (ko) * | 2010-07-21 | 2016-12-07 | 엘지이노텍 주식회사 | 발광 소자 |
KR101689164B1 (ko) * | 2010-07-21 | 2016-12-23 | 엘지이노텍 주식회사 | 발광소자 |
DE102010044986A1 (de) * | 2010-09-10 | 2012-03-15 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip und Verfahren zur Herstellung eines Leuchtdiodenchips |
KR101710889B1 (ko) * | 2010-11-05 | 2017-02-28 | 엘지이노텍 주식회사 | 발광 소자 |
JP4989773B1 (ja) | 2011-05-16 | 2012-08-01 | 株式会社東芝 | 半導体発光素子 |
DE102013107531A1 (de) * | 2013-07-16 | 2015-01-22 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
KR102169826B1 (ko) * | 2014-05-28 | 2020-10-27 | 엘지이노텍 주식회사 | 발광소자 |
TWI572025B (zh) * | 2015-01-15 | 2017-02-21 | 財團法人工業技術研究院 | 半導體發光元件及其製作方法 |
US9721931B2 (en) | 2015-01-15 | 2017-08-01 | Industrial Technology Research Institute | Semiconductor light emitting device and fabricating method thereof |
US10354580B2 (en) | 2017-09-07 | 2019-07-16 | United Microelectronics Corp. | Integrated LED display and fabrication method thereof |
CN109888074B (zh) * | 2019-01-31 | 2020-07-07 | 华灿光电(浙江)有限公司 | 发光二极管芯片及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11330622A (ja) * | 1998-05-21 | 1999-11-30 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
KR20050104750A (ko) * | 2004-04-29 | 2005-11-03 | 주식회사 이츠웰 | 수직전극형 발광 다이오드 및 그 제조 방법 |
JP2006073619A (ja) * | 2004-08-31 | 2006-03-16 | Sharp Corp | 窒化物系化合物半導体発光素子 |
JP2006278554A (ja) * | 2005-03-28 | 2006-10-12 | Tokyo Institute Of Technology | AlGaN系深紫外発光素子およびその製造方法 |
JP2007110056A (ja) * | 2005-09-13 | 2007-04-26 | Showa Denko Kk | 窒化物系半導体発光素子及びその製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1093186A (ja) * | 1996-09-17 | 1998-04-10 | Nichia Chem Ind Ltd | 窒化物半導体レーザ素子 |
JP3087831B2 (ja) * | 1996-11-27 | 2000-09-11 | 日亜化学工業株式会社 | 窒化物半導体素子 |
DE59814431D1 (de) * | 1997-09-29 | 2010-03-25 | Osram Opto Semiconductors Gmbh | Halbleiterlichtquelle und Verfahren zu ihrer Herstellung |
DE10044500A1 (de) * | 2000-09-08 | 2002-04-04 | Highlink Technology Corp Chupe | Licht emittierendes Verbindungshalbleiter-Bauteil und Verfahren zur Herstellung desselben |
CN1220283C (zh) * | 2001-04-23 | 2005-09-21 | 松下电工株式会社 | 使用led芯片的发光装置 |
TW518771B (en) * | 2001-09-13 | 2003-01-21 | United Epitaxy Co Ltd | LED and the manufacturing method thereof |
TW578318B (en) * | 2002-12-31 | 2004-03-01 | United Epitaxy Co Ltd | Light emitting diode and method of making the same |
US9368428B2 (en) * | 2004-06-30 | 2016-06-14 | Cree, Inc. | Dielectric wafer level bonding with conductive feed-throughs for electrical connection and thermal management |
US7679097B2 (en) * | 2004-10-21 | 2010-03-16 | Nichia Corporation | Semiconductor light emitting device and method for manufacturing the same |
JP4353167B2 (ja) * | 2004-10-21 | 2009-10-28 | 日亜化学工業株式会社 | 半導体発光素子とその製造方法 |
US7256483B2 (en) * | 2004-10-28 | 2007-08-14 | Philips Lumileds Lighting Company, Llc | Package-integrated thin film LED |
WO2007032421A1 (en) | 2005-09-13 | 2007-03-22 | Showa Denko K.K. | Nitride semiconductor light emitting device and production thereof |
KR101316415B1 (ko) * | 2005-10-17 | 2013-10-08 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조 방법 |
DE102007022947B4 (de) * | 2007-04-26 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
KR100946523B1 (ko) * | 2008-04-24 | 2010-03-11 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
-
2008
- 2008-04-24 KR KR1020080038117A patent/KR100946523B1/ko active IP Right Grant
-
2009
- 2009-04-16 JP JP2011506185A patent/JP2011519161A/ja active Pending
- 2009-04-16 DE DE202009018441U patent/DE202009018441U1/de not_active Expired - Lifetime
- 2009-04-16 WO PCT/KR2009/001992 patent/WO2009131335A2/ko active Application Filing
- 2009-04-16 CN CN2009801138976A patent/CN102017195A/zh active Pending
- 2009-04-16 EP EP09734742A patent/EP2262010A4/en not_active Ceased
- 2009-04-16 EP EP13177922.5A patent/EP2657996A3/en not_active Withdrawn
- 2009-04-23 US US12/428,622 patent/US7973329B2/en active Active
-
2011
- 2011-05-20 US US13/112,322 patent/US8492782B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11330622A (ja) * | 1998-05-21 | 1999-11-30 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
KR20050104750A (ko) * | 2004-04-29 | 2005-11-03 | 주식회사 이츠웰 | 수직전극형 발광 다이오드 및 그 제조 방법 |
JP2006073619A (ja) * | 2004-08-31 | 2006-03-16 | Sharp Corp | 窒化物系化合物半導体発光素子 |
JP2006278554A (ja) * | 2005-03-28 | 2006-10-12 | Tokyo Institute Of Technology | AlGaN系深紫外発光素子およびその製造方法 |
JP2007110056A (ja) * | 2005-09-13 | 2007-04-26 | Showa Denko Kk | 窒化物系半導体発光素子及びその製造方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2262010A4 * |
Also Published As
Publication number | Publication date |
---|---|
EP2262010A2 (en) | 2010-12-15 |
JP2011519161A (ja) | 2011-06-30 |
EP2657996A3 (en) | 2014-03-05 |
EP2657996A2 (en) | 2013-10-30 |
US7973329B2 (en) | 2011-07-05 |
KR20090112308A (ko) | 2009-10-28 |
US20090267106A1 (en) | 2009-10-29 |
US20110284823A1 (en) | 2011-11-24 |
CN102017195A (zh) | 2011-04-13 |
DE202009018441U1 (de) | 2011-09-06 |
KR100946523B1 (ko) | 2010-03-11 |
US8492782B2 (en) | 2013-07-23 |
WO2009131335A2 (ko) | 2009-10-29 |
EP2262010A4 (en) | 2011-09-14 |
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