JP4829190B2 - 発光素子 - Google Patents
発光素子 Download PDFInfo
- Publication number
- JP4829190B2 JP4829190B2 JP2007216034A JP2007216034A JP4829190B2 JP 4829190 B2 JP4829190 B2 JP 4829190B2 JP 2007216034 A JP2007216034 A JP 2007216034A JP 2007216034 A JP2007216034 A JP 2007216034A JP 4829190 B2 JP4829190 B2 JP 4829190B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- refractive index
- light emitting
- convex structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/107—Subwavelength-diameter waveguides, e.g. nanowires
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4207—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Description
図8に示す発光ダイオードは、GaN、SiC又はサファイアよりなる基板11上に、n型GaN層12、活性層13、p型GaAlN層(電子オーバーフロー防止層)14、p型GaNからなる第1のコンタクト層15、及びp型GaNからなる第2のコンタクト層16を順次形成し、更にp型GaNからなる第2のコンタクト層16上にp型電極層17を、n型GaN層12上にn型電極層18を形成することにより構成される。
本実施例は、図11に示すような基板を挟んで上下に電極を設け、上下に電流を流す構造の発光ダイオードに適用した例である。
Claims (3)
- 発光層を備える支持基板、及び前記支持基板の光取り出し面上に形成された光透過層を
具備し、前記光透過層は、前記支持基板よりも屈折率の低い材料の複数の凸状構造体、及
び前記凸状構造体を覆う、前記凸状構造体よりも屈折率の低い材料の被覆層を含み、前記
凸状構造体及び被覆層は樹脂材料であり、前記凸状構造体は、エネルギービームの照射に
よる樹脂の相転移により形成され、面内方向に周期的屈折率分布構造を有することを特徴
とする発光素子。 - 前記支持基板の光取り出し面は、水平面とその周囲の傾斜面とからなることを特徴とす
る請求項1に記載の発光素子。 - 前記凸状構造体は、ナノメーターないしサブミクロンオーダーのサイズを有することを
特徴とする請求項1又は2に記載の発光素子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007216034A JP4829190B2 (ja) | 2007-08-22 | 2007-08-22 | 発光素子 |
US12/195,536 US8148890B2 (en) | 2007-08-22 | 2008-08-21 | Light-emitting device and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007216034A JP4829190B2 (ja) | 2007-08-22 | 2007-08-22 | 発光素子 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010167356A Division JP5334925B2 (ja) | 2010-07-26 | 2010-07-26 | 発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009049301A JP2009049301A (ja) | 2009-03-05 |
JP4829190B2 true JP4829190B2 (ja) | 2011-12-07 |
Family
ID=40381949
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007216034A Expired - Fee Related JP4829190B2 (ja) | 2007-08-22 | 2007-08-22 | 発光素子 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8148890B2 (ja) |
JP (1) | JP4829190B2 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101449030B1 (ko) | 2008-04-05 | 2014-10-08 | 엘지이노텍 주식회사 | 그룹 3족 질화물계 반도체 발광다이오드 소자 및 이의 제조방법 |
JP5875512B2 (ja) | 2009-04-15 | 2016-03-02 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | ZnOの膜、ナノ構造、およびバルク単結晶を水性合成するための低温連続循環反応器 |
US9653655B2 (en) * | 2009-04-15 | 2017-05-16 | The Regents Of The University Of California | Light emitting diodes with zinc oxide current spreading and light extraction layers deposited from low temperature aqueous solution |
JP2010278316A (ja) * | 2009-05-29 | 2010-12-09 | Panasonic Electric Works Co Ltd | 発光装置 |
US8933526B2 (en) * | 2009-07-15 | 2015-01-13 | First Solar, Inc. | Nanostructured functional coatings and devices |
KR101081166B1 (ko) * | 2009-09-23 | 2011-11-07 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
JP5338688B2 (ja) * | 2010-01-15 | 2013-11-13 | 豊田合成株式会社 | 発光装置の製造方法 |
KR100969100B1 (ko) * | 2010-02-12 | 2010-07-09 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
JP5331051B2 (ja) * | 2010-04-21 | 2013-10-30 | パナソニック株式会社 | 発光素子 |
KR101726807B1 (ko) | 2010-11-01 | 2017-04-14 | 삼성전자주식회사 | 반도체 발광소자 |
JP5117596B2 (ja) | 2011-05-16 | 2013-01-16 | 株式会社東芝 | 半導体発光素子、ウェーハ、および窒化物半導体結晶層の製造方法 |
KR101894025B1 (ko) * | 2011-12-16 | 2018-09-03 | 엘지이노텍 주식회사 | 발광소자 |
CN103367595B (zh) * | 2012-03-30 | 2016-02-10 | 展晶科技(深圳)有限公司 | 发光二极管晶粒及其制造方法 |
JP5792694B2 (ja) * | 2012-08-14 | 2015-10-14 | 株式会社東芝 | 半導体発光素子 |
KR20150039518A (ko) * | 2013-10-02 | 2015-04-10 | 엘지이노텍 주식회사 | 발광소자 |
JP6828288B2 (ja) * | 2016-06-30 | 2021-02-10 | 三菱電機株式会社 | 発光装置 |
CN115332412A (zh) * | 2021-03-25 | 2022-11-11 | 福建晶安光电有限公司 | 发光二极管的图形化衬底、发光二极管及其制备方法 |
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-
2007
- 2007-08-22 JP JP2007216034A patent/JP4829190B2/ja not_active Expired - Fee Related
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2008
- 2008-08-21 US US12/195,536 patent/US8148890B2/en active Active
Also Published As
Publication number | Publication date |
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US8148890B2 (en) | 2012-04-03 |
US20090052159A1 (en) | 2009-02-26 |
JP2009049301A (ja) | 2009-03-05 |
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