WO2009145502A2 - 발광 소자 - Google Patents
발광 소자 Download PDFInfo
- Publication number
- WO2009145502A2 WO2009145502A2 PCT/KR2009/001764 KR2009001764W WO2009145502A2 WO 2009145502 A2 WO2009145502 A2 WO 2009145502A2 KR 2009001764 W KR2009001764 W KR 2009001764W WO 2009145502 A2 WO2009145502 A2 WO 2009145502A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- conductive semiconductor
- semiconductor layer
- light emitting
- light
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 120
- 238000002161 passivation Methods 0.000 claims abstract description 44
- 238000000605 extraction Methods 0.000 claims abstract description 14
- 238000003892 spreading Methods 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 39
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 23
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 23
- 239000010931 gold Substances 0.000 claims description 20
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 20
- 229910002601 GaN Inorganic materials 0.000 claims description 17
- -1 ZnO or MgZnO Chemical class 0.000 claims description 16
- 229910045601 alloy Inorganic materials 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 15
- 239000006104 solid solution Substances 0.000 claims description 15
- 229910052737 gold Inorganic materials 0.000 claims description 14
- 239000010948 rhodium Substances 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 229910052763 palladium Inorganic materials 0.000 claims description 10
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 229910052703 rhodium Inorganic materials 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 229910017982 Ag—Si Inorganic materials 0.000 claims description 2
- 229910019819 Cr—Si Inorganic materials 0.000 claims description 2
- 229910018098 Ni-Si Inorganic materials 0.000 claims description 2
- 229910018529 Ni—Si Inorganic materials 0.000 claims description 2
- 229910021074 Pd—Si Inorganic materials 0.000 claims description 2
- 229910019596 Rh—Si Inorganic materials 0.000 claims description 2
- 229910017083 AlN Inorganic materials 0.000 claims 2
- 239000000463 material Substances 0.000 description 26
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 15
- 238000005240 physical vapour deposition Methods 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 239000011651 chromium Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000005083 Zinc sulfide Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- HBEQXAKJSGXAIQ-UHFFFAOYSA-N oxopalladium Chemical compound [Pd]=O HBEQXAKJSGXAIQ-UHFFFAOYSA-N 0.000 description 2
- MUMZUERVLWJKNR-UHFFFAOYSA-N oxoplatinum Chemical compound [Pt]=O MUMZUERVLWJKNR-UHFFFAOYSA-N 0.000 description 2
- 229910003445 palladium oxide Inorganic materials 0.000 description 2
- 229910003446 platinum oxide Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- 229910000962 AlSiC Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Definitions
- the present invention relates to a light emitting device.
- the light emitting diode is attracting attention in the next generation lighting field because it has a high efficiency of converting electrical energy into light energy and a lifespan of more than 5 years on average, which can greatly reduce energy consumption and maintenance cost.
- the light emitting diode is formed of a light emitting semiconductor layer including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and is applied through the first conductive semiconductor layer and the second conductive semiconductor layer. The light is generated in the active layer according to the current.
- the refractive index of the material constituting the light emitting semiconductor layer is smaller than the refractive index of the outside air, light generated in the active layer may not be effectively emitted to the outside, but is totally reflected at an interface to disappear within the light emitting semiconductor layer. .
- the light extraction structure of the concave-convex shape is formed in the first conductive semiconductor layer or the second conductive semiconductor layer disposed on one side of the active layer, but this causes the electrical characteristics of the light emitting diode to be impaired. There is.
- the embodiment provides a light emitting device having a new structure and a method of manufacturing the same.
- the embodiment provides a light emitting device having improved electrical characteristics and light extraction efficiency and a method of manufacturing the same.
- the light emitting device may include a first conductive semiconductor layer; An active layer on the first conductive semiconductor layer; A second conductive semiconductor layer on the active layer; A passivation layer surrounding the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer; A first light extracting structure layer having a concave-convex structure on the passivation layer; A first electrode layer electrically connected to the first conductive semiconductor layer through the passivation layer and the first light extracting structure layer; And a second electrode layer electrically connected to the second conductive semiconductor layer through the passivation layer and the first light extracting structure layer.
- the light emitting device includes a support substrate; A second conductive semiconductor layer on the support substrate; An active layer on the second conductive semiconductor layer; A first conductive semiconductor layer on the active layer; A passivation layer surrounding the second conductive semiconductor layer, the active layer, and the first conductive semiconductor layer; A light extraction structure layer having a concave-convex structure on the passivation layer; And a first electrode layer penetrating the passivation layer and the light extracting structure layer and formed on the first conductive semiconductor layer.
- the embodiment can provide a light emitting device having a new structure and a method of manufacturing the same.
- the embodiment can provide a light emitting device capable of improving electrical characteristics and light extraction efficiency and a method of manufacturing the same.
- FIG. 1 is a view for explaining a light emitting element according to the first embodiment
- FIG. 2 is a view for explaining a light emitting element according to the second embodiment
- FIG. 3 is a view for explaining a light emitting element according to the third embodiment
- FIG. 4 is a view for explaining a light emitting element according to the fourth embodiment.
- FIG. 5 is a view for explaining a light emitting element according to the fifth embodiment
- each layer (film), region, pattern or structure is “on / on” or “bottom / on” of the substrate, each layer (film), region, pad or patterns
- “on” and “under” are “directly” or “indirectly” formed through another layer. It includes everything that is done.
- the criteria for the top or bottom of each layer will be described with reference to the drawings.
- each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description.
- the size of each component does not necessarily reflect the actual size.
- FIG. 1 is a view for explaining a light emitting device according to the first embodiment.
- a buffer layer 201 is formed on a growth substrate 10, and a first conductive semiconductor layer 20, an active layer 30, and a second conductive semiconductor are formed on the buffer layer 201.
- a light emitting semiconductor layer comprising a layer 40 is formed.
- the light emitting semiconductor layer is partially removed by mesa etching, and a first current spreading layer 502 is formed on the first conductive semiconductor layer 20 exposed by the mesa etching.
- a second current spreading layer 501 is formed on the second conductive semiconductor layer 40.
- the passivation layer 80 surrounding the light emitting semiconductor layer and the first and second current spreading layers 502 and 501 is formed, and the first light extracting structure layer 90 having the uneven structure 90a is formed on the passivation layer 80. Is formed.
- first light extracting structure layer 90 and the passivation layer 80 are selectively removed, and a first electrode layer 70 is formed on the first current spreading layer 502, and the second current spreading layer is formed.
- the second electrode layer 60 is formed on the 501.
- a reflective layer 100 is formed under the growth substrate 10.
- the growth substrate 10 may include sapphire (Al 2 O 3 ), silicon carbide (SiC), silicon (Si), aluminum nitride (AlN), gallium nitride (GaN), aluminum gallium nitride. AlGaN, glass or gallium arsenide (GaAs) may be used.
- the buffer layer 201 is formed on the growth substrate 10 prior to growing the first conductive semiconductor layer 20, and may include, for example, at least one of InGaN, AlN, SiC, SiCN, or GaN. It can be formed of either.
- the light emitting semiconductor layer including the first conductive semiconductor layer 20, the active layer 30, and the second conductive semiconductor layer 40 may be formed of a group III nitride-based semiconductor material.
- the first conductive semiconductor layer 20 may be formed of a gallium nitride layer including an n-type impurity such as Si
- the second conductive semiconductor layer 40 may be a p-type such as Mg or Zn. It may be formed of a gallium nitride layer containing an impurity.
- the active layer 30 is a layer that generates light by recombining electrons and holes, for example, may be formed including any one of InGaN, AlGaN, GaN, or AlInGaN, using the active layer 30
- the wavelength of the light emitted from the light emitting device is determined according to the type of the material.
- the active layer 30 and the second conductive semiconductor layer 40 are formed on a portion of the first conductive semiconductor layer 20. In other words, a portion of the first conductive semiconductor layer 20 is in contact with the active layer 30.
- an interface modification layer may be further formed on the second conductive semiconductor layer 40.
- the interfacial modification layer may include a superlattice structure, any one of InGaN, GaN, AlInN, AlN, InN, or AlGaN implanted with impurities of a first conductivity type, and InGaN, GaN implanted with impurities of a second conductivity type. , AlInN, AlN, InN, or AlGaN, or any one of the group III nitride system having a nitrogen-polar surface (nitrogen-polar surface).
- the interfacial modification layer formed of the superlattice structure may be formed of nitride or carbon nitride including group 2, 3, or 4 elements.
- the first current spreading layer 502 is partially formed on the first conductive semiconductor layer 20, and the second current spreading layer (partially or entirely) is formed on the second conductive semiconductor layer 40. 501 is formed.
- the first current spreading layer 502 and the second current spreading layer 501 are not necessarily formed, and at least one of the first current spreading layer 502 and the second current spreading layer 501 is omitted. May be
- the first current spreading layer 502 and the second current spreading layer 501 are indium tin oxide (ITO), doped zinc oxide (ZnO), titanium nitride (TiN), indium zinc oxide (IZO), or IZTO (IZTO).
- ITO indium tin oxide
- ZnO doped zinc oxide
- TiN titanium nitride
- IZO indium zinc oxide
- IZTO IZTO
- indium zinc tin oxide NiO (nickel oxide), RuO 2 (ruthenium oxide), IrO 2 (iridium oxide), doped In 2 O 3 (doped indium oxide), Au, Ag, doped SnO 2 (doped tin oxide) ),
- At least one of GITO (gallium indium tin oxide), PdO (palladium oxide), PtO (platinum oxide), Ag 2 O (silver oxide), or doped TiO 2 (doped titanium oxide) Can be formed.
- the first current spreading layer 502 and the second current spreading layer 501 emit light by uniformly distributing current input to the first conductive semiconductor layer 20 and the second conductive semiconductor layer 40.
- the first electrode layer 70 and the second electrode layer 60 are well adhered to the first conductive semiconductor layer 20 and the second conductive semiconductor layer 40, respectively. .
- the passivation layer 80 includes the first current spreading layer 502 and the second current spreading layer 501 except for some regions on the first current spreading layer 502 and the second current spreading layer 501. Is formed on the light emitting semiconductor layer.
- the passivation layer 80 protects the light emitting device from external physical, chemical, and electrical damage.
- the passivation layer 80 is formed of a transparent electrically insulating material, for example, SiO 2 (silicon dioxide).
- SiN x silicon nitride
- MgF 2 manganesium floride
- Cr 2 O 3 chronium oxide
- Al 2 O 3 aluminum oxide
- TiO 2 zinc sulfide
- ZnS zinc oxide
- CaF 2 It is formed of at least one of calcium floride (AlN), aluminum nitride (AlN), or chromium nitride (CrN).
- the first light extracting structure layer 90 is disposed on the passivation layer 80. Like the passivation layer 80, the first light extracting structure layer 90 is selectively removed to expose some regions of the first current spreading layer 502 and the second current spreading layer 501.
- the first light extracting structure layer 90 is formed of a material having high light transmittance, and has a cylindrical shape on the surface in a chemical vapor deposition (CVD) and physical vapor deposition (PVD) process or a wet etching process using an acid solution and a base solution.
- the concave-convex structure 90a such as a cone, may be formed of a surface material layer having negative polarity.
- the first light extracting structure layer 90 may be formed of a Group 2-6 compound including ZnO or MgZnO, a Group 3-5 compound including GaN or AlN, and may be selected as a hexagonal material. Can be.
- the first light extracting structure layer 90 may be formed of TiO 2 or Al 2 O 3 .
- the first light extracting structure layer 90 may be disposed above the passivation layer 80 to increase light extraction efficiency without lowering the electrical characteristics of the light emitting semiconductor layer.
- the first electrode layer 70 is formed in a portion of the first current spreading layer 502. If the first current spreading layer 502 is omitted, the first electrode layer 70 may be formed in contact with the first conductive semiconductor layer 20.
- the first electrode layer 70 is a material for forming an interface having good adhesion with the first conductive semiconductor layer 20 or the first current spreading layer 502.
- the first electrode layer 70 may be formed of any one of Ti, Al, Cr, V, Au, or Nb, and may be formed using silicides.
- the second electrode layer 60 is formed in a portion of the second current spreading layer 501.
- the second electrode layer 60 may be formed of a material forming an interface having good adhesion and a schottky contact interface with the second current spreading layer 501.
- the second electrode layer 60 may be formed of at least one of Ni, Al, Cr, Cu, Pt, Au, Pd, ITO, ZnO, ZITO, TiN, or IZO, and may form silicides. Can be formed using.
- the reflective layer 100 is formed under the growth substrate 10 and is formed of a material having a high reflectance.
- the reflective layer 100 may be formed of at least one of Ag, Al, Rh, Pd, Ni, Au, Distributed Bragg Reflector (DBR), or Omni-Directional Reflector (ODR).
- DBR Distributed Bragg Reflector
- ODR Omni-Directional Reflector
- the reflective layer 100 may increase the light efficiency of the light emitting device by reflecting the light traveling down the growth substrate 10.
- FIG. 2 is a view for explaining a light emitting device according to the second embodiment.
- the structure of the light emitting device according to the second embodiment is similar to that of the light emitting device according to the first embodiment described above. Therefore, in describing the light emitting device according to the second embodiment, a description overlapping with the description of the light emitting device according to the first embodiment will be omitted.
- a buffer layer 201 is formed on a growth substrate 10, and a first conductive semiconductor layer 20, an active layer 30, and a second conductive semiconductor are formed on the buffer layer 201.
- a light emitting semiconductor layer comprising a layer 40 is formed.
- the light emitting semiconductor layer is partially removed by mesa etching, and a first current spreading layer 502 is formed on the first conductive semiconductor layer 20 exposed by the mesa etching.
- a second current spreading layer 501 is formed on the second conductive semiconductor layer 40.
- the passivation layer 80 surrounding the light emitting semiconductor layer and the first and second current spreading layers 502 and 501 is formed, and the first light extracting structure layer 90 having the uneven structure 90a is formed on the passivation layer 80. Is formed.
- first light extracting structure layer 90 and the passivation layer 80 are selectively removed, and a first electrode layer 70 is formed on the first current spreading layer 502, and the second current spreading layer is formed.
- the second electrode layer 60 is formed on the 501.
- a second light extracting structure layer 110 and a reflective layer 100 having an uneven structure 110a are formed below the growth substrate 10.
- the second light extracting structure layer 110 allows the light traveling under the growth substrate 10 to be extracted to the reflective layer 100 to increase the amount of light reflection in the reflective layer 100.
- the second light extracting structure layer 110 is formed of a material having high light transmittance, and has a cylindrical shape on the surface in a chemical vapor deposition (CVD) and physical vapor deposition (PVD) process or a wet etching process using an acid solution and a base solution.
- the concave-convex structure 110a such as a cone, may be formed of a surface material layer having negative polarity.
- the second light extracting structure layer 110 may be formed of a Group 2-6 compound including ZnO or MgZnO, a Group 3-5 compound including GaN or AlN, and may be selected as a hexagonal material. Can be.
- the second light extracting structure layer 110 may be formed of TiO 2 or Al 2 O 3 .
- the second light extracting structure layer 110 may be disposed under the growth substrate 10 to increase light extraction efficiency without lowering the electrical characteristics of the light emitting semiconductor layer.
- FIG 3 is a view for explaining a light emitting device according to the third embodiment.
- the structure of the light emitting device according to the third embodiment is similar to that of the light emitting device according to the first embodiment described above. Therefore, in describing the light emitting device according to the third embodiment, a description overlapping with the description of the light emitting device according to the first embodiment will be omitted.
- a buffer layer 201 is formed on a growth substrate 10, and a first conductive semiconductor layer 20, an active layer 30, and a second conductive semiconductor are formed on the buffer layer 201.
- a light emitting semiconductor layer comprising a layer 40 is formed.
- the light emitting semiconductor layer is partially removed by mesa etching, and a first current spreading layer 502 is formed on the first conductive semiconductor layer 20 exposed by the mesa etching.
- a second current spreading layer 501 is formed on the second conductive semiconductor layer 40.
- the passivation layer 80 surrounding the light emitting semiconductor layer and the first and second current spreading layers 502 and 501 is formed, and the first light extracting structure layer 90 having the uneven structure 90a is formed on the passivation layer 80. Is formed.
- first light extracting structure layer 90 and the passivation layer 80 are selectively removed, and a first electrode layer 70 is formed on the first current spreading layer 502, and the second current spreading layer is formed.
- the second electrode layer 60 is formed on the 501.
- the reflective layer 100 is formed on the partial region of the first electrode layer 70 and the first light extracting structure layer 90, and the partial region of the second electrode layer 60 and the first light extracting structure layer 90, respectively.
- the reflective layer 100 may be formed of an electrically conductive material, and may electrically connect the first electrode layer 70 and the second electrode layer 60 to the outside.
- the reflective layer 100 allows the light emitted from the active layer 30 to be emitted to the outside through the growth substrate 10. That is, in the light emitting device according to the third embodiment, unlike the light emitting devices according to the first and second embodiments, light emitted from the active layer 30 is mainly emitted to the outside through the growth substrate 10.
- FIG. 4 is a view for explaining a light emitting device according to the fourth embodiment.
- the structure of the light emitting device according to the fourth embodiment is similar to that of the light emitting device according to the third embodiment. Therefore, in describing the light emitting device according to the fourth embodiment, a description overlapping with the description of the light emitting device according to the third embodiment will be omitted.
- a buffer layer 201 is formed on a growth substrate 10, and a first conductive semiconductor layer 20, an active layer 30, and a second conductive semiconductor are formed on the buffer layer 201.
- a light emitting semiconductor layer comprising a layer 40 is formed.
- the light emitting semiconductor layer is partially removed by mesa etching, and a first current spreading layer 502 is formed on the first conductive semiconductor layer 20 exposed by the mesa etching.
- a second current spreading layer 501 is formed on the second conductive semiconductor layer 40.
- the passivation layer 80 surrounding the light emitting semiconductor layer and the first and second current spreading layers 502 and 501 is formed, and the first light extracting structure layer 90 having the uneven structure 90a is formed on the passivation layer 80. Is formed.
- first light extracting structure layer 90 and the passivation layer 80 are selectively removed, and a first electrode layer 70 is formed on the first current spreading layer 502, and the second current spreading layer is formed.
- the second electrode layer 60 is formed on the 501.
- the reflective layer 100 is formed on the partial region of the first electrode layer 70 and the first light extracting structure layer 90, and the partial region of the second electrode layer 60 and the first light extracting structure layer 90, respectively.
- the reflective layer 100 may be formed of an electrically conductive material, and may electrically connect the first electrode layer 70 and the second electrode layer 60 to the outside.
- the reflective layer 100 allows the light emitted from the active layer 30 to be emitted to the outside through the growth substrate 10. That is, in the light emitting device according to the third embodiment, unlike the light emitting devices according to the first and second embodiments, light emitted from the active layer 30 is mainly emitted to the outside through the growth substrate 10.
- the second light extracting structure layer 110 having the uneven structure 110a is formed under the growth substrate 10.
- the second light extracting structure layer 110 allows the light traveling under the growth substrate 10 to be effectively extracted to the outside.
- the second light extracting structure layer 110 is formed of a material having high light transmittance, and has a cylindrical shape on the surface in a chemical vapor deposition (CVD) and physical vapor deposition (PVD) process or a wet etching process using an acid solution and a base solution.
- the concave-convex structure 110a such as a cone, may be formed of a surface material layer having negative polarity.
- the second light extracting structure layer 110 may be formed of a Group 2-6 compound including ZnO or MgZnO, a Group 3-5 compound including GaN or AlN, and may be selected as a hexagonal material. Can be.
- the second light extracting structure layer 110 may be formed of TiO 2 or Al 2 O 3 .
- the second light extracting structure layer 110 may be disposed under the growth substrate 10 to increase light extraction efficiency without lowering the electrical characteristics of the light emitting semiconductor layer.
- FIG. 5 is a view for explaining a light emitting device according to the fifth embodiment.
- a reflective ohmic contact current spreading layer 130 is formed on the support substrate 150, and a second conductive semiconductor layer 40 and an active layer are formed on the reflective ohmic contact current spreading layer 130.
- a light emitting semiconductor layer including the 30 and the first conductive semiconductor layer 20 is formed.
- the protrusion 140 is formed on the first conductive semiconductor layer 20 to increase light extraction efficiency.
- a passivation layer 80 surrounding the light emitting semiconductor layer is formed on the top and side surfaces of the light emitting semiconductor layer, and a light extraction structure layer 90 having an uneven structure 90a is formed on the passivation layer 80. do.
- the passivation layer 80 and the light extracting structure layer 90 are selectively removed to partially expose the first conductive semiconductor layer 20, and a first electrode layer on the first conductive semiconductor layer 20. 700 is formed.
- a second electrode layer 60 is formed under the support substrate 150.
- the support substrate 150 is formed of a wafer substrate including at least one of Si, SiGe, ZnO, GaN, AlSiC, or GaAs as an electrically conductive material film, or Cu, Ni, Ag, Al, It may be formed of a metal, an alloy, or a solid solution containing at least one of Nb, Ta, Ti, Au, Pd, or W.
- the support substrate 150 is in the form of a sheet, disk, or foil having a thickness of 5 ⁇ m to 1 mm, and may be electroplated, physical vapor deposition (PVD), or chemical. It may be formed by a vapor deposition (CVD) method.
- PVD physical vapor deposition
- CVD vapor deposition
- the reflective ohmic contact current spreading layer 130 may include silver (Ag), an alloy containing silver (Ag), a solid solution containing silver (Ag), an rhodium (Rh), an alloy containing rhodium (Rh), and rhodium ( Solid solution with Rh), aluminum (Al), alloy with aluminum (Al), solid solution with aluminum (Al), platinum (Pt), alloy with platinum (Pt), platinum (Pt) Solid solution, palladium (Pd), alloy containing palladium (Pd), solid solution containing palladium (Pd), gold (Au), alloy containing gold (Au), solid solution containing gold (Au), nickel (Ni), alloys containing nickel (Ni), solid solutions containing nickel (Ni), or silicides such as Ag-Si, Rh-Si, Pd-Si, Ni-Si, Cr-Si, Pt-Si Can be formed.
- the reflective ohmic contact current spreading layer 130 may be formed of at least one of Ag, Au, Ni, Ti, and Cu having excellent adhesive strength on a surface facing the support substrate 150.
- the light emitting semiconductor layer including the first conductive semiconductor layer 20, the active layer 30, and the second conductive semiconductor layer 40 may be formed of a group III nitride-based semiconductor material.
- the first conductive semiconductor layer 20 may be formed of a gallium nitride layer including an n-type impurity such as Si
- the second conductive semiconductor layer 40 may be a p-type such as Mg or Zn. It may be formed of a gallium nitride layer containing an impurity.
- the active layer 30 is a layer that generates light by recombining electrons and holes, for example, may be formed including any one of InGaN, AlGaN, GaN, or AlInGaN, using the active layer 30
- the wavelength of the light emitted from the light emitting device is determined according to the type of the material.
- the protrusion 140 may be formed of the same material or a different material as the first conductive semiconductor layer 20, and may be formed in a pattern having no regularity through wet etching, or may have regularity through a lithography process. It can also be formed into a pattern.
- the passivation layer 80 is formed to surround the light emitting semiconductor layer except for a partial region where the first electrode layer 70 is formed.
- the passivation layer 80 protects the light emitting device from external physical, chemical, and electrical damage.
- the passivation layer 80 is formed of a transparent electrically insulating material, for example, SiO 2 (silicon dioxide).
- SiN x silicon nitride
- MgF 2 manganesium floride
- Cr 2 O 3 chronium oxide
- Al 2 O 3 aluminum oxide
- TiO 2 zinc sulfide
- ZnS zinc oxide
- CaF 2 It is formed of at least one of calcium floride (AlN), aluminum nitride (AlN), or chromium nitride (CrN).
- the light extracting structure layer 90 is disposed on the passivation layer 80.
- the light extracting structure layer 90 is formed of a material having high light transmittance, and has a cylindrical or conical shape on the surface in a chemical vapor deposition (CVD) and physical vapor deposition (PVD) process or a wet etching process using an acid solution and a base solution.
- CVD chemical vapor deposition
- PVD physical vapor deposition
- the same concave-convex structure 90a may be formed of a surface material layer having negative polarity.
- the light extracting structure layer 90 may be formed of a Group 2-6 compound including ZnO or MgZnO, a Group 3-5 compound including GaN or AlN, and may be selected as a hexagonal material.
- the first light extracting structure layer 90 may be formed of TiO 2 or Al 2 O 3 .
- the light extracting structure layer 90 may be disposed above the passivation layer 80 to increase light extraction efficiency without lowering the electrical characteristics of the light emitting semiconductor layer.
- the first electrode layer 70 is formed in a portion of the semiconductor layer 20 of the first conductivity type.
- the first electrode layer 70 is a material for forming an interface having good adhesion with the first conductive semiconductor layer 20, and a material for forming an ohmic contact interface with the first conductive semiconductor layer 20. It can be formed as.
- the first electrode layer 70 may be formed of any one of Ti, Al, Cr, V, Ag, Rh, Au, Pd, or Nb.
- the second electrode layer 60 is formed under the support substrate 60.
- the second electrode layer 60 may be formed of a material forming an interface having good adhesion to the support substrate 60 and an ohmic contact interface.
- the second electrode layer 60 may be formed of at least one of Ni, Al, Cr, Cu, Ag, Al, Rh, Pt, Au, or Pd.
- the embodiment can be applied to a light emitting device used as a light source.
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Abstract
Description
Claims (15)
- 제1 도전형의 반도체층;상기 제1 도전형의 반도체층 상에 활성층;상기 활성층 상에 제2 도전형의 반도체층;상기 제1 도전형의 반도체층, 활성층, 및 제2 도전형의 반도체층을 포위하는 패시베이션층;상기 패시베이션층 상에 요철 구조를 가진 제1 광 추출 구조층;상기 패시베이션층 및 제1 광 추출 구조층을 관통하여 상기 제1 도전형의 반도체층과 전기적으로 연결되는 제1 전극층; 및상기 패시베이션층 및 제1 광 추출 구조층을 관통하여 상기 제2 도전형의 반도체층과 전기적으로 연결되는 제2 전극층을 포함하는 발광 소자.
- 제 1항에 있어서,상기 제1 도전형의 반도체층 아래에 성장 기판을 포함하는 발광 소자.
- 제 2항에 있어서,상기 성장 기판 아래에 반사층을 포함하는 발광 소자.
- 제 3항에 있어서,상기 성장 기판과 반사층 사이에 요철 구조를 가진 제2 광 추출 구조층을 포함하는 발광 소자.
- 제 1항에 있어서,상기 제1 도전형의 반도체층 상에 상기 제1 전극층과 전기적으로 연결되는 제1 전류 퍼짐층을 포함하는 발광 소자.
- 제 1항에 있어서,상기 제2 도전형의 반도체층 상에 상기 제2 전극층과 전기적으로 연결되는 제2 전류 퍼짐층을 포함하는 발광 소자.
- 제 1항에 있어서,상기 제1 전극층 및 제1 광 추출 구조층과, 상기 제2 전극층 및 제1 광 추출 구조층 상에 각각 분리되어 형성된 반사층을 포함하는 발광 소자.
- 제 7항에 있어서,상기 상기 제1 도전형의 반도체층 아래에 성장 기판과, 상기 성장 기판 아래에 요철 구조가 형성된 제2 광 추출 구조층을 포함하는 발광 소자.
- 제 1항에 있어서,상기 제1 광 추출 구조층은 ZnO 또는 MgZnO를 포함하는 2-6족 화합물, GaN 또는 AlN을 포함하는 3-5족 화합물, TiO2 또는 Al2O3 중 어느 하나로 형성된 발광 소자.
- 지지 기판;상기 지지 기판 상에 제2 도전형의 반도체층;상기 제2 도전형의 반도체층 상에 활성층;상기 활성층 상에 제1 도전형의 반도체층;상기 제2 도전형의 반도체층, 활성층, 및 제1 도전형의 반도체층을 포위하는 패시베이션층;상기 패시베이션층 상에 요철 구조를 갖는 광 추출 구조층; 및상기 패시베이션층 및 광 추출 구조층을 관통하고 상기 제1 도전형의 반도체층 상에 형성된 제1 전극층을 포함하는 발광 소자.
- 제 10항에 있어서,상기 지지 기판과 상기 제2 도전형의 반도체층 사이에 반사성 오믹 접촉 전류 퍼짐층을 포함하는 발광 소자.
- 제 11항에 있어서,상기 반사성 오믹 접촉 전류 퍼짐층은 은(Ag), 은(Ag)이 포함된 합금, 은(Ag)이 포함된 고용체, 로듐(Rh), 로듐(Rh)이 포함된 합금, 로듐(Rh)이 포함된 고용체, 알루미늄(Al), 알루미늄(Al)이 포함된 합금, 알루미늄(Al)이 포함된 고용체, 백금(Pt), 백금(Pt)이 포함된 합금, 백금(Pt)이 포함된 고용체, 팔라듐(Pd), 팔라듐(Pd)이 포함된 합금, 팔라듐(Pd)이 포함된 고용체, 금(Au), 금(Au)이 포함된 합금, 금(Au)이 포함된 고용체, 니켈(Ni), 니켈(Ni)이 포함된 합금, 니켈(Ni)이 포함된 고용체, Ag-Si, Rh-Si, Pd-Si, Ni-Si, Cr-Si, 또는 Pt-Si 중 어느 하나로 형성되는 발광 소자.
- 제 10항에 있어서,상기 제1 도전형의 반도체층 상에 돌기부를 포함하는 발광 소자.
- 제 10항에 있어서,상기 지지 기판 아래에 제2 전극층을 포함하는 발광 소자.
- 제 10항에 있어서,상기 광 추출 구조층은 ZnO 또는 MgZnO를 포함하는 2-6족 화합물, GaN 또는 AlN을 포함하는 3-5족 화합물, TiO2 또는 Al2O3 중 어느 하나로 형성된 발광 소자.
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EP09754967.9A EP2264793B8 (en) | 2008-04-05 | 2009-04-06 | Light emitting diode |
US12/936,298 US8816370B2 (en) | 2008-04-05 | 2009-04-06 | Light-emitting element |
CN200980116966.9A CN102047445B (zh) | 2008-04-05 | 2009-04-06 | 发光元件 |
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CN102194958A (zh) * | 2010-03-15 | 2011-09-21 | Lg伊诺特有限公司 | 发光器件和发光器件封装 |
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Also Published As
Publication number | Publication date |
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CN102047445A (zh) | 2011-05-04 |
WO2009145502A3 (ko) | 2010-02-18 |
CN102047445B (zh) | 2014-05-07 |
CN104022204A (zh) | 2014-09-03 |
KR20090106301A (ko) | 2009-10-08 |
EP2264793A2 (en) | 2010-12-22 |
CN104022204B (zh) | 2017-08-25 |
US10224462B2 (en) | 2019-03-05 |
EP2264793A4 (en) | 2015-03-18 |
US20140332803A1 (en) | 2014-11-13 |
EP2264793B1 (en) | 2017-08-16 |
US20110024784A1 (en) | 2011-02-03 |
KR101449030B1 (ko) | 2014-10-08 |
US8816370B2 (en) | 2014-08-26 |
EP2264793B8 (en) | 2017-11-29 |
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