JP2011222999A - 発光素子 - Google Patents
発光素子 Download PDFInfo
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- JP2011222999A JP2011222999A JP2011084693A JP2011084693A JP2011222999A JP 2011222999 A JP2011222999 A JP 2011222999A JP 2011084693 A JP2011084693 A JP 2011084693A JP 2011084693 A JP2011084693 A JP 2011084693A JP 2011222999 A JP2011222999 A JP 2011222999A
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- 239000004065 semiconductor Substances 0.000 claims description 93
- 239000000758 substrate Substances 0.000 claims description 43
- 239000002019 doping agent Substances 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 20
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 175
- 230000001681 protective effect Effects 0.000 description 29
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 25
- 239000000463 material Substances 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 21
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 239000012790 adhesive layer Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 19
- 229910052759 nickel Inorganic materials 0.000 description 17
- 239000010949 copper Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 14
- 239000010931 gold Substances 0.000 description 14
- 239000010936 titanium Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 11
- 229910052697 platinum Inorganic materials 0.000 description 11
- 229910052719 titanium Inorganic materials 0.000 description 11
- 239000011651 chromium Substances 0.000 description 10
- 229910052709 silver Inorganic materials 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 9
- 239000011787 zinc oxide Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 7
- 229910052763 palladium Inorganic materials 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 229910052703 rhodium Inorganic materials 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- -1 aluminum tin oxide Chemical compound 0.000 description 4
- 238000005253 cladding Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000010948 rhodium Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000004038 photonic crystal Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000010944 silver (metal) Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 101001045744 Sus scrofa Hepatocyte nuclear factor 1-beta Proteins 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
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- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
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- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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Abstract
【解決手段】発光素子100は、第1電極160と、該第1電極上に発光構造物145と、該発光構造物上に第2電極170と、及び発光構造物を制御するために発光構造物上に制御スイッチ120と、を含む。
【選択図】図1
Description
前記発光構造物上に第2電極と、及び前記発光構造物を制御するために前記発光構造物上に制御スイッチを含む。
図4乃至図12は、第1実施形態に従う発光素子の製造工程を説明する図面である。
図4を参照すると、シリコン(Si)基板110上に前記発光構造物145を形成する。前記発光構造物145は、例えば、前記第2導電型半導体層130、活性層140及び第1導電型半導体層150を順次に積層することで形成することができる。
図13は、第2実施形態に従う発光素子の断面図である。第2実施形態に従う発光素子100Bは、第1実施形態に従う発光素子100に比べて電極の構造を除いては同一である。よって、第2実施形態で第1実施形態と同一の構成要素は同一の図面番号を付与して詳細な説明を略する。
図14を参照すると、実施形態に従う発光素子パッケージは、パッケージ胴体20と、該パッケージ胴体20に設置された第1リード電極31、第2リード電極32及び第3リード電極33と、前記パッケージ胴体20に設置されて、前記第1リード電極31及び第2リード電極32から電源の供給を受けて、前記第3リード電極33から制御信号の供給を受ける実施形態に従う発光素子100と、該発光素子100を囲むモールディング部材40を含む。
図15を参照すると、表示装置1000は、導光板1041と、該導光板1041に光を提供する発光モジュール1031と、前記導光板1041下に反射部材1022と、前記導光板1041上に光学シート1051と、該光学シート1051上に表示パネル1061と、前記導光板1041、発光モジュール1031及び反射部材1022を収納するボトムカバー1011を含むことができるが、これに限定されない。
図16を参照すると、表示装置1100は、ボトムカバー1152、前記に開示された発光素子パッケージ30がアレイされた基板1120、光学部材1154、及び表示パネル1155を含む。
図17を参照すると、照明装置1500は、ケース1510と、該ケース1510に設置された発光モジュール1530と、前記ケース1510に設置されて、外部電源から電源の提供を受ける連結端子1520を含むことができる。
前記基板1532は、絶縁体に回路パターンが印刷されたものであることができるし、例えば、一般印刷回路基板(PCB:Printed Circuit Board)、メタルコア(Metal Core)PCB、軟性(Flexible)PCB、セラミックスPCB、FR-4基板などを含むことができる。
Claims (15)
- 第1電極と、
前記第1電極上に第1半導体層、活性層及び第2半導体層を含む発光構造物と、
前記発光構造物上に第2電極と、及び
前記発光構造物を制御するために前記発光構造物上に制御スイッチと、
を含むことを特徴とする発光素子。 - 前記制御スイッチは、制御信号に応答して前記発光構造物の動作を制御することを特徴とする請求項1に記載の発光素子。
- 前記制御信号は、オン/オフ制御信号及び階調制御信号のうちで何れか一つであることを特徴とする請求項2に記載の発光素子。
- 前記制御スイッチは、半導体スイッチであることを特徴とする請求項1に記載の発光素子。
- 前記半導体スイッチは、MOSFETスイッチ、JFETスイッチ、CMOSスイッチ及びBJTスイッチのうちで何れか一つであることを特徴とする請求項4に記載の発光素子。
- 前記制御スイッチは、前記発光構造物の周縁の一部の領域に形成されることを特徴とする請求項1に記載の発光素子。
- 前記制御スイッチは、
第1ドーパントを含む胴体部と、
前記胴体部に第2ドーパントを含むソース領域とドレイン領域と、
前記ソース領域と前記ドレイン領域との間の前記胴体部上にゲート絶縁膜と、及び
前記ゲート絶縁膜上にゲート電極と、
を含むことを特徴とする請求項1に記載の発光素子。 - 前記胴体部は、前記発光構造物を支持するための基板から形成されたことを特徴とする請求項7に記載の発光素子。
- 前記胴体部は、シリコン及びサファイアのうちで何れか一つを含むことを特徴とする請求項7に記載の発光素子。
- 前記第1ドーパントは、前記第1半導体層と同一の極性を有することを特徴とする請求項7に記載の発光素子。
- 前記第2ドーパントは、前記第2半導体層と同一の極性を有することを特徴とする請求項7に記載の発光素子。
- 前記ソース領域と前記ドレイン領域上に前記ソース電極及びドレイン電極、
をさらに含むことを特徴とする請求項7に記載の発光素子。 - 前記ソース電極と前記ドレイン電極のうちで何れか一つと前記第2電極との間にワイヤ、
をさらに含むことを特徴とする請求項12に記載の発光素子。 - 前記第1電極及び前記発光構造物の間に反射層及びオーミック接触層のうちで少なくとも一つ、
をさらに含むことを特徴とする請求項1に記載の発光素子。 - 前記第2電極が接する前記発光構造物上に凹凸、
をさらに含むことを特徴とする請求項1に記載の発光素子。
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KR10-2010-0033835 | 2010-04-13 |
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EP (1) | EP2378555B1 (ja) |
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KR (1) | KR101007125B1 (ja) |
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JP5897813B2 (ja) | 2016-03-30 |
US20150014734A1 (en) | 2015-01-15 |
US9281342B2 (en) | 2016-03-08 |
US8872215B2 (en) | 2014-10-28 |
EP2378555A3 (en) | 2015-12-30 |
TWI553908B (zh) | 2016-10-11 |
TW201135979A (en) | 2011-10-16 |
EP2378555B1 (en) | 2019-06-12 |
CN102222741A (zh) | 2011-10-19 |
EP2378555A2 (en) | 2011-10-19 |
KR101007125B1 (ko) | 2011-01-10 |
CN102222741B (zh) | 2014-08-27 |
US20110248302A1 (en) | 2011-10-13 |
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