JPS5728375A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5728375A
JPS5728375A JP10342980A JP10342980A JPS5728375A JP S5728375 A JPS5728375 A JP S5728375A JP 10342980 A JP10342980 A JP 10342980A JP 10342980 A JP10342980 A JP 10342980A JP S5728375 A JPS5728375 A JP S5728375A
Authority
JP
Japan
Prior art keywords
layer
type
light emitting
grown
epitaxial growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10342980A
Other languages
Japanese (ja)
Inventor
Tsutomu Wada
Tomonobu Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10342980A priority Critical patent/JPS5728375A/en
Publication of JPS5728375A publication Critical patent/JPS5728375A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To improve light emitting efficiency and the characteristics of modulation by a method wherein a PN junction of a light emitting diode is prepared through liquid-phase epitaxial growth, and a semi-insulating semiconductor layer and an active layer of a FET are formed through a molecular beam epitaxial method in the semiconductor device controlling the light emitting output of the diode by the input signals of the FET connected in series. CONSTITUTION:The light emitting diode is manufactured in such a manner than an N<+> type Ga0.8Al0.2As layer 12 and a P type Ga0.9Al0.1 As layer 13 are laminated and deposited on an N<+> type GaAs substrate 11 through the slide board type liquid-phase epitaxial growth method and the PN junction is formed between the layers 12 and 13. A P<+> type Ga0.7Al0.3As layer 14 is further grown on the layer 13 in a liquid phase in order to decrease contact resistance. The element is admitted into another device and grown through the molecular beam epitaxial growth method, but an N type or undoped GaAs layer 15 is shaped previously in order to prevent contact with air and the discontinuance of the layer 14 at that time. A GaAs layer 16 is grown through the molecular epitaxial growth method and used as the semi-insulating semiconductor layer, and an N type CaAs layer 17 functioning as the active layer of the FET is grown on the layer through the same method.
JP10342980A 1980-07-28 1980-07-28 Manufacture of semiconductor device Pending JPS5728375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10342980A JPS5728375A (en) 1980-07-28 1980-07-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10342980A JPS5728375A (en) 1980-07-28 1980-07-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5728375A true JPS5728375A (en) 1982-02-16

Family

ID=14353787

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10342980A Pending JPS5728375A (en) 1980-07-28 1980-07-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5728375A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4439910A (en) * 1980-09-29 1984-04-03 Hughes Aircraft Company Process for fabrication of monolithic transistor coupled electroluminescent diode
US4491264A (en) * 1982-06-01 1985-01-01 Rca Corporation Method of soldering a light emitting device to a substrate
JPS61142464U (en) * 1985-02-25 1986-09-03
US4921817A (en) * 1987-07-09 1990-05-01 Mitsubishi Monsanto Chemical Co. Substrate for high-intensity led, and method of epitaxially growing same
EP2378555A3 (en) * 2010-04-13 2015-12-30 LG Innotek Co., Ltd. Light emitting device and light emitting device package
CN105870277A (en) * 2016-04-20 2016-08-17 华灿光电(苏州）有限公司 Light-emitting diode epitaxial wafer and growth method thereof
CN106935579A (en) * 2012-02-23 2017-07-07 尼斯迪格瑞科技环球公司 Active light emissive diode (led) module
US10270436B2 (en) 2014-11-14 2019-04-23 The Hong Kong University Of Science And Technology Transistors having on-chip integrated photon source or photonic-ohmic drain to facilitate de-trapping electrons trapped in deep traps of transistors

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4439910A (en) * 1980-09-29 1984-04-03 Hughes Aircraft Company Process for fabrication of monolithic transistor coupled electroluminescent diode
US4491264A (en) * 1982-06-01 1985-01-01 Rca Corporation Method of soldering a light emitting device to a substrate
JPS61142464U (en) * 1985-02-25 1986-09-03
US4921817A (en) * 1987-07-09 1990-05-01 Mitsubishi Monsanto Chemical Co. Substrate for high-intensity led, and method of epitaxially growing same
EP2378555A3 (en) * 2010-04-13 2015-12-30 LG Innotek Co., Ltd. Light emitting device and light emitting device package
US9281342B2 (en) 2010-04-13 2016-03-08 Lg Innotek Co., Ltd. Light emitting device and light emitting device package
CN106935579A (en) * 2012-02-23 2017-07-07 尼斯迪格瑞科技环球公司 Active light emissive diode (led) module
US10270436B2 (en) 2014-11-14 2019-04-23 The Hong Kong University Of Science And Technology Transistors having on-chip integrated photon source or photonic-ohmic drain to facilitate de-trapping electrons trapped in deep traps of transistors
CN105870277A (en) * 2016-04-20 2016-08-17 华灿光电(苏州）有限公司 Light-emitting diode epitaxial wafer and growth method thereof
CN105870277B (en) * 2016-04-20 2018-05-29 华灿光电(苏州）有限公司 A kind of LED epitaxial slice and its growing method

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